CN1979764A - Heat treatment unit, heat treatiment method, control program and computer-readable recording medium - Google Patents

Abstract

The present invention provides a heat treatment apparatus that can reliably prevent damage to a substrate even if it is a large substrate, and can improve the total processing capacity. The heat treatment device (28) includes a roller transport mechanism (5) as a transport path for transporting the substrate G in one direction, and a heating mechanism (7) for heating the substrate G transported on the transport path. The heating mechanism (7) is composed of a preliminary heating unit (7a) and a main heating unit (7b) provided in the housing in order from the upstream side in the transport direction along the transport path. The main heating part (7b) is set to a first temperature, and the preliminary heating part (7a) is set to a second temperature higher than the first temperature. After the substrate is heated to around the first temperature in the preliminary heating section (7a), it is heated at the first temperature in the main heating section (7b).

Description

Heat treatment device, treatment method, control program, computer readable storage medium

technical field

The present invention relates to a heat treatment device, a heat treatment method, a control program, and a computer-readable storage medium for heat-treating a substrate such as a glass substrate for a flat panel display (FPD).

Background technique

In the manufacture of FPDs, photolithography is used to form circuit patterns on glass substrates for FPDs. Forming a circuit pattern by photolithography is carried out in the following order, that is, coating a resist solution on a glass substrate to form a resist film, exposing the resist film to make it correspond to the circuit pattern, and finally developing it. .

In photolithography, generally, after forming a resist film and after developing treatment, a heat treatment is performed on a glass substrate in order to dry the resist film. In such a heat treatment process, a heat treatment apparatus is used, which includes: a heating plate on which a glass substrate is placed and heated; The glass substrate conveyed by the conveyance arm is placed on the lift pins on the heating plate (for example, refer to Patent Documents 1, 2, and 3).

However, recently, with the pursuit of ultra-large FPDs, a huge glass substrate with a side length of more than 2 meters has appeared, and the processing performance has decreased due to the increase in the size of the glass substrate. Therefore, if the above-mentioned conventional heat treatment apparatus is used, if the glass substrate is a large substrate, the substrate may be damaged due to the impact generated during the transfer between the transfer arm and the lift pin or between the lift pin and the heating plate.

In addition, generally, the temperature control responsiveness of the heating plate is poor, and it is kept at a predetermined temperature. Therefore, if the above-mentioned conventional heat treatment apparatus is used, the glass substrate is placed on the heating plate until it reaches the desired temperature. It takes quite a long time to set the temperature. In addition, since it takes more time to transport the glass substrates before and after the heat treatment, the total throughput of this heat treatment apparatus is low.

[Patent Document 1] Japanese Patent Laid-Open No. 2002-231792

[Patent Document 2] Japanese Patent Laid-Open No. 2001-196299

[Patent Document 3] Japanese Patent Application Laid-Open No. 11-204428

Contents of the invention

The present invention was invented in view of the relevant facts, and its object is to provide a heat treatment device, a heat treatment method, a control program, and a computer-readable storage medium. Through the present invention, even a large substrate can be reliably It prevents the breakage of the substrate and at the same time improves the total throughput.

In order to solve the above-mentioned problems, the present invention provides a heat treatment apparatus, which is characterized in that it is a heat treatment apparatus for performing heat treatment on a substrate, and it has a transport path for transporting the substrate in one direction, Heating mechanism for heating substrates being transported. The heating mechanism is provided with a preliminary heating unit and a main heating unit sequentially from the upstream side of the transport direction along the transport path, the main heating unit is set to a first temperature, and the preliminary heating unit is set to a temperature higher than the first temperature. The second temperature is to heat the substrate at the first temperature in the main heating section after heating the substrate to the vicinity of the first temperature in the preliminary heating section.

In addition, the present invention provides a heat treatment apparatus, which is characterized in that it is a heat treatment apparatus for performing heat treatment on a substrate, and it includes a transport path for transporting the substrate in one direction, a housing provided around the transport path, A heating mechanism for heating the substrate conveyed on the conveyance path within the housing. The heating mechanism is provided with a preliminary heating unit and a main heating unit in the housing sequentially from the upstream side of the transport direction along the transport path, the main heating unit is set to a first temperature, and the preliminary heating unit is set to a higher temperature than the first temperature. As for the second higher temperature, after the substrate is heated to the vicinity of the first temperature in the preliminary heating section, the substrate is heated at the first temperature in the main heating section. In the present invention, it is preferable to provide exhaust mechanisms for exhausting the inside of the above-mentioned casing at both ends of the conveying direction of the above-mentioned casing. Gas suction mechanism.

In the above-mentioned present invention, it is preferable that the preliminary heating unit is disposed so that the substrate conveyed on the conveyance path passes while being heated to the vicinity of the first temperature.

In addition, in the present invention described above, the main heating unit is set to the first temperature such that the temperature on the downstream side in the conveyance direction is higher than the temperature on the upstream side in the conveyance direction. The preliminary heating unit is set to the second temperature such that the temperature on the upstream side in the conveyance direction is higher than the temperature on the downstream side in the conveyance direction.

Furthermore, in the present invention described above, it is preferable that the main heating section and the preliminary heating section are respectively set to the first temperature and the second temperature so that the temperature of both sides in the width direction of the transportation path is higher than that of the transportation path. The central portion in the width direction of the passage is high.

The present invention provides a heat treatment apparatus, which is characterized in that it is a heat treatment apparatus for performing heat treatment on a substrate, it has a transport path for transporting the substrate in one direction, and heats the substrate transported on the transport path. The heating mechanism, the control unit that controls the heating mechanism. The heating mechanism is provided with a preliminary heating unit and a main heating unit sequentially from the upstream side of the conveying direction along the conveying path, and the control unit controls the heating mechanism so that the main heating unit is set to a first temperature, and the preliminary heating unit is set to a first temperature. The second temperature is set to be higher than the first temperature, and after the substrate is heated to about the first temperature in the preliminary heating section, the substrate is heated at the first temperature in the main heating section. In the present invention, the control unit sets the main heating unit to the first temperature so that the temperature on the downstream side in the conveying direction is higher than the temperature on the upstream side in the conveying direction, and sets the preliminary heating unit to the second temperature. , so that the temperature on the upstream side in the conveying direction is higher than the temperature on the downstream side in the conveying direction. The control unit preferably sets the main heating unit and the preliminary heating unit to the first temperature and the second temperature so that the temperature at both sides in the width direction of the transport path is higher than that in the center portion in the width direction of the transport path. The temperature is high.

Furthermore, the present invention provides a heat treatment method, which is characterized in that the method uses a heat treatment device to perform heat treatment on the substrate transported in one direction along the transport path, and the heat treatment device moves from the transport path to the substrate along the transport path. The preliminary heating part and the main heating part are arranged in sequence on the upstream side of the direction, the above-mentioned main heating part is set to a first temperature, and at the same time, the above-mentioned preliminary heating part is set to a second temperature higher than the above-mentioned first temperature. After heating the substrate to a temperature close to the first temperature in the heating section, heating is performed at the first temperature in the main heating section.

Furthermore, the present invention provides a control program, which is characterized in that when the program is run on a computer, the processing unit is controlled by the computer to implement the above heat treatment method.

Furthermore, the present invention provides a computer-readable storage medium, which is characterized in that it is a computer-readable storage medium storing a control program running on a computer, and when the above-mentioned control program is running, through The computer controls the processing unit, thereby implementing the above-mentioned heat treatment method.

According to the present invention, since it carries out heat treatment to the substrate conveyed in one direction along the conveyance path, the impact generated by conveyance does not act on the substrate, so that conveyance and heating of the substrate can be carried out at the same time. Along the transfer path for transferring the substrate, the preliminary heating unit and the main heating unit are sequentially arranged from the upstream side of the transfer direction, the main heating unit is set to a first temperature, and at the same time, the preliminary heating unit is set to a temperature higher than the first temperature. For the second temperature, after the substrate is heated to close to the first temperature in the preliminary heating part, it is heated at the first temperature in the main heating part, so, for example, the temperature of the substrate is rapidly raised to a specified After the temperature is reached, it can be maintained at a specified temperature by heating in the main heating part, so compared with conventional heat treatment techniques, the heating time can be greatly shortened. Therefore, even if the substrate is an extremely large substrate, damage to the substrate can be reliably prevented, and the total throughput can be improved.

Description of drawings

[FIG. 1] Resist coating and development with the heat treatment apparatus according to the present invention for forming a resist film on a glass substrate for FPD and developing the resist film after exposure treatment Simplified floor plan of the processing system.

[ Fig. 2 ] A sectional view in the plane direction of the heat treatment apparatus.

[ Fig. 3 ] A cross-sectional view in the side direction of the heat treatment apparatus.

[ Fig. 4 ] A schematic plan view of first and second panel heaters constituting the heat treatment apparatus.

[FIG. 5] A conceptual diagram of the control systems of the first and second panel heaters.

[ Fig. 6 ] A schematic diagram illustrating heat treatment of a substrate by a heat treatment apparatus.

[ Fig. 7 ] A conceptual diagram of another example of the control system of the first and second panel heaters.

[ Fig. 8 ] A schematic view illustrating a heating temperature distribution of a preliminary heating section and a main heating section constituting a heat treatment apparatus.

28, 31 Heat treatment device (heat treatment device)

5 roller conveying mechanism

6 shells

7 heating mechanism

7a Preparatory heating part

7b main heating part

61 import entrance

Exit 62

67 exhaust port

68 exhaust unit

69 suction port

104 heater controller (control unit)

G substrate

Detailed ways

Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.

FIG. 1 shows the resist after formation of a resist film on a glass substrate for FPD (hereinafter referred to as "substrate") mounted on a heat treatment apparatus according to an embodiment of the present invention and after exposure treatment. A schematic plan view of a resist coating and development processing system for film development processing.

The resist coating and development processing system 100 includes: a cassette station 1 for placing an outer case C for accommodating a plurality of substrates G; a processing station 2 for performing a series of processes including resist coating and development on the substrate G; The interface station 4 that transfers the substrate G between the processing station 2 and the exposure unit 9 that performs exposure treatment on the substrate G, and the cassette station 1 and the interface station 4 are respectively arranged on both sides of the processing station 2 . In addition, in FIG. 1 , the longitudinal direction of the resist application and development processing system 100 is defined as the X direction, and the direction perpendicular to the X direction on a plane is defined as the Y direction.

The cassette station 1 includes a transport device 11 for loading and unloading substrates G between a stage 12 on which outer boxes C can be placed in parallel in the Y direction and a processing station 2, and transports outer boxes C between the stage 12 and the outside. The conveying arm 11a arranged on the conveying device 11 can move along the guide rail 10 extending in the Y direction, and it can also move up and down, move back and forth and rotate horizontally, and it can carry in and out the substrate G between the outer box C and the processing station 2.

The processing station 2 has two parallel substrate G transfer lines A, B extending in the X direction between the cassette station 1 and the interface station 4 . The transfer line A uses the so-called horizontal transfer method such as roller transfer or conveyor transfer to transfer the substrate G from the cassette station 1 side to the interface station 4 side, while the transfer line B uses the so-called horizontal transfer method such as roller transfer or conveyor transfer. , the substrate G is transferred from the interface station 4 side to the cassette station 1 side.

On the conveying line A, from the side of the box station 1 to the side of the interface station 4, the excimer UV irradiation unit (e-UV) 21, the cleaning unit (SCR) 22, the preheating unit (PH) 23, Adhesion unit (AD) 24 , cooling unit (COL) 25 , resist coating unit (CT) 26 , decompression drying unit (DP) 27 , heat treatment device (HT) 28 , and cooling unit (COL) 29 .

The excimer UV irradiation unit (e-UV) 21 is used to remove organic substances contained in the substrate G, and the cleaning unit (SCR) 22 is used to clean and dry the substrate G. The preheating unit (PH) 23 performs heat treatment on the substrate G, the attachment unit (AD) 24 performs hydrophobic treatment on the substrate G, and the cooling unit (COL) 25 cools the substrate G. The resist coating unit (CT) 26 supplies a resist solution on the substrate G to form a resist film, and the reduced-pressure drying unit (DP) 27 makes the resist film contained on the substrate G The volatile components evaporate and dry the resist film. A heat treatment device (HT) 28 , which will be described in detail later, heats the substrate G, and a cooling unit (COL) 29 cools the substrate G similarly to the cooling unit (COL) 25 .

On the transport line B, a developing unit (DEV) 30 , a heat treatment unit (HT) 31 , and a cooling unit (COL) 32 are arranged sequentially from the interface station 4 side toward the cartridge station 1 side. Furthermore, between the cooling unit (COL) 32 and the cassette station 1 is provided an inspection unit (IP) 35 for inspecting the substrate G subjected to a series of processes including resist coating and development.

The developing unit (DEV) 30 performs coating of a developer on the substrate G, cleaning of the substrate G, and drying of the substrate G in sequence. The heat treatment device (HT) 31 is the same as the heat treatment device (HT) 28 and is used to heat the substrate G. The cooling unit (COL) 32 is the same as the cooling unit (COL) 25 and is used to cool the substrate G.

The interface station 4 includes: a rotary table (RS) 44 provided with a buffer box capable of accommodating the substrate G and serving as a transfer section of the substrate G; receiving the substrate G conveyed on the transfer line A and conveying it to the rotary table (RS) 44 On the transfer arm 43. The conveying arm 43 can move up and down, move back and forth, and rotate horizontally. It can not only enter into the exposure unit 9 adjacent to the conveying arm 43, but also enter into the exposure unit 9 adjacent to the conveying arm 43 and the developing unit (DEV) 30. External unit block 90 for peripheral exposure unit (EE) and titler (TITLER).

The resist application and development processing unit 100 is connected to and controlled by a process controller 101 having a CPU. Connected to the process controller 101 are: a keyboard for command input operations performed by a process manager in order to manage each part or each unit of the resist application and development processing system 100, and a screen where each part or each unit can be viewed. The user interface 102, which is composed of a display of the operating status of the unit, etc., stores various information such as the heating process or the cooling process performed in the resist coating and development processing unit 100 under the control of the process controller 101. The storage unit 103 for methods such as processing control programs or processing condition data.

If necessary, according to the instructions sent by the user interface 102, etc., read any method from the storage unit 103, and run the program in the process controller 101, so that under the control of the process controller 101, Desired processing is carried out in the resist application and development processing unit 100 . In addition, for the method of controlling the program or processing condition data, etc., not only a computer-readable storage medium such as a device stored in a CD-ROM, hard disk, floppy disk, USB disk, etc. can be used, but also from other units, such as through a dedicated The line is transmitted at any time, so that it can be used online.

In the resist coating and development processing unit 100 having the above structure, first, the substrate G in the outer case C placed on the mounting table 12 of the cassette station 1 is transported to the processing station 2 by the transport arm 11 a of the transport device 11 . The upstream side end of the conveying line A is then conveyed on the conveying line A, and the organic matter contained in the substrate G is removed by an excimer UV irradiation unit (e-UV) 21 . The substrate G after the organic substance removal process is carried out by the excimer UV irradiation unit (e-UV) 21 is transported on the transport line A, and then cleaned and dried by the cleaning unit (SCR) 22 .

The substrate G that has been cleaned and dried by the cleaning unit (SCR) 22 is transported on the transport line A, and then heated and dehydrated by the preheating unit (PH) 23 . The substrate G that has been heat-treated by the preheating unit (PH) 23 is transported on the transport line A, and then subjected to a hydrophobic treatment by the attachment unit (AD) 24 . The substrate G after the hydrophobic treatment by the attachment unit (AD) 24 is transported on the transport line A and cooled by the cooling unit (COL) 25 .

The substrate G cooled by the cooling unit (COL) 25 is transported on the transport line A, and then passes through the resist coating unit (CT) 26 to form a resist film. Forming a resist film using the resist coating unit (CT) 26 is performed by supplying a resist liquid onto the substrate G while conveying the substrate G on the conveying line A. FIG.

The substrate G on which a resist film has been formed by the resist coating unit (CT) 26 is conveyed on the conveying line A, and is exposed to decompressed air by the decompression drying unit (DP) 27, thereby resisting the resist film. The film is dried.

The substrate G after drying the resist film by the decompression drying unit (DP) 27 is transported on the transfer line A, and then heat-treated by the heat treatment device (HT) 28 to remove the substrate G contained in the resist film. solvent. The heat treatment of the substrate G is performed while being transported on the transport line A by a roller transport mechanism 5 described later. The substrate G after the heat treatment by the heat treatment device (HT) 28 is transported on the transport line A and cooled in the cooling unit (COL) 29 .

The substrate G cooled by the cooling unit (COL) 29 is transported to its downstream end on the transport line A, and then transported to the rotary table (RS) 44 by the transport arm 43 of the interface station 4 . Next, the substrate G is transported to the peripheral exposure unit (EE) of the external unit block 90 by the transfer arm 43, and the peripheral exposure unit (EE) is used to perform exposure treatment to remove the outer peripheral portion (unnecessary portion) of the resist film. . Next, the substrate G is transported to the exposure unit 9 by the transport arm 43 , and an exposure process of a predetermined pattern is performed on the resist film. In some cases, the substrate G is temporarily accommodated in a buffer box on the rotary table (RS) 44 and then transferred to the exposure unit 9 . The substrate G after the exposure process is transported by the transport arm 43 to the titler (TITLER) of the external unit block 90, and prescribed information is recorded by the titler (TITLER).

The substrate G on which predetermined information has been recorded by a titler (TITLER) is conveyed on a conveying line B, and is sequentially subjected to developer coating, cleaning and drying by a developing unit (DEV) 30 . The developer solution coating process, cleaning process, and drying process are performed in the following order: For example, while the substrate G is conveyed on the conveyance line B, the developer solution is poured on the substrate G, and then once the conveyance stops, the substrate is tilted at a predetermined angle, thereby Allow the developer to flow down. In this state, the cleaning solution is supplied to the substrate G, and the developing solution is rinsed away. After that, the substrate G returns to a horizontal posture and is transported again while blowing drying gas onto the substrate G.

The substrate G after the developer application process, cleaning process, and drying process performed by the developing unit (DEV) 30 is transported on the transport line B, and then heat-treated by the heat treatment device (HT) 31 to remove the substrate G containing Solvents and moisture in the resist film. The heat treatment of the substrate G is performed while being transported on the transport line B by a roller transport mechanism 5 described later. In addition, an i-line UV irradiation unit for decolorizing the developing solution may be provided between the developing unit (DEV) 30 and the heat treatment device (HT) 31 . The substrate G after the heat treatment by the heat treatment apparatus (HT) 31 is transported on the transport line B and cooled in the cooling unit (COL) 32 .

The substrate G cooled by the cooling unit (COL) 32 is transported on the transport line B and inspected by the inspection unit (IP) 35 . The substrate G that has passed the inspection is placed in a predetermined outer case C placed on the mounting table 12 by the transfer arm 11 a of the transfer device 11 installed on the cassette station 1 .

Next, the heat treatment device (HT) 28 will be described in detail. The heat treatment device (HT) 31 has exactly the same configuration as the heat treatment device (HT) 28 .

FIG. 2 is a planar cross-sectional view showing a heat treatment device (HT) 28 (heat treatment device), and FIG. 3 is a side cross-sectional view thereof.

The heat treatment device (HT) 28 has: a roller conveying mechanism 5 for conveying the substrate G toward one side in the X direction; A heating mechanism 7 for heating the conveyed substrate G.

The roller conveying mechanism 5 has a plurality of substantially cylindrical rotatable roller members 50 extending along the Y direction provided at intervals in the X direction. The rotating shafts 51 of the roller parts 50 are respectively directly or indirectly connected with a driving source such as a motor not shown in the figure, and rotate under the driving of the driving source. The direction side is conveyed. In addition, the roller member 50 has a shape in contact with the entire substrate G (Y direction), and the outer peripheral surface 52 is made of a material with a low heat transfer rate such as resin in order to make it difficult to transmit the heat of the substrate G heated by the heating mechanism 7. Formed, the rotating shaft 51 is formed of a material with high strength such as aluminum, stainless steel, ceramics, and relatively low heat transfer rate. The conveyance path or the conveyance surface of the roller conveyance mechanism 5 constitutes a part of the conveyance line A (transportation line B in the heat treatment apparatus (HT) 31 ).

The casing 6 is formed into a thin box shape, and can accommodate the substrate G in a substantially horizontal state, and has a transfer line A (transfer line B in the heat treatment device (HT) 31 ) on the side wall opposite to the X direction. The slot-shaped carry-in port 61 and the carry-out port 62 extending in the Y direction through which the board|substrate G conveyed can pass. The rotating shafts 51 of the roller members 50 of the roller conveyance mechanism 5 are disposed in the housing 6 , and are rotatably supported by bearings 60 provided on the side wall of the housing 6 facing the Y direction.

The wall portion of the casing 6, including an upper wall portion, a bottom wall portion, and a side wall portion opposite to the Y direction, has a double-layer structure, and it is provided with an inner wall 63 and an outer wall 64 that are spaced apart from each other, and the inner wall 63 and the outer wall 64 The space 65 in between is used as an air insulation layer which insulates the inside and outside of the casing 6 . A heat insulating material 66 for insulating the inside and outside of the casing 6 is also provided on the inner side of the outer wall 64 .

The heating mechanism 7 includes first and second panel heaters 71 ( 71 a to 71 r ), 72 ( 72 a to 72 r ) provided in the housing 6 along a transport path for transporting the substrate G using the roller transport mechanism 5 . And the second panel heaters 71 and 72 are respectively provided on the back (lower side) and front (upper side) of the substrate G transported by the roller transport mechanism 5 so as to be close to the substrate transported by the roller transport mechanism 5 . In this way, the thickness of the case 6 can be made thinner.

The first panel heaters 71 form a thin rectangle extending in the Y direction, and are respectively provided between the respective roller members 50 while being arranged in a number along the X direction (71a to 71r in order from the upstream side in the X direction). In this way, the thickness of the casing 6 can be made thinner. The first panel heater 71 is, for example, mounted on and supported by a side wall of the housing 6 opposite to the Y direction. The second panel heaters 72 form a thin rectangle extending in the Y direction, and are arranged in a number along the X direction corresponding to the arrangement pitch of the first panel heaters 71 (72a to 72r in order from the upstream side in the X direction). The second panel heater 72 is attached to and supported by the upper wall portion of the casing 6 . The distance between the first panel heater 71 and the transport path of the substrate G transported by the roller transport mechanism 5 and the distance between the second panel heater 72 and the transport path of the substrate G transported by the roller transport mechanism 5 are equal.

In this embodiment, the first and second flat heaters 71 and 72 used to heat the substrate G are arranged in a number along the X direction at equal intervals, so that each first flat heater 71 can (or between each of the second flat heaters 72) (for example, the symbol P position in FIG. 3 ), divide the housing 6 into several parts along the X direction. In this way, even if the size of the substrate G is large, the heat treatment apparatus 28 itself can be easily transported.

Furthermore, in this embodiment, the second flat heaters 72 used to heat the substrate G are arranged in a number along the X direction, so that the positions between the second flat heaters 72 (for example, in FIG. 3 Symbol P position), open and close the upper wall portion of the housing 6 (refer to the phantom line in FIG. 3 ) like the shape of a side-by-side door. In this way, the roller conveying mechanism 5 or the heating mechanism 7 in the housing 6 can be easily maintained.

As shown in Fig. 4 (a) (Fig. 4 is the first and the second planar heater 71,72 that constitute heat treatment device 28 schematic plan view), the first and the second flat heater 71,72 have respectively: Some, for example, four mica heaters 73 (73a, 73b, 73c, 73d) formed by setting heating elements on the mica plate, and a thin rectangular heat conductor 74 formed by arranging and installing these mica heaters 73 along the Y direction .

As shown in Figure 5 (Figure 5 is a conceptual diagram showing the control system of the first and second flat heaters 71, 72), several first and second flat heaters 71a-71r, 72a-72r are divided along the X direction The formed first and second flat heaters 71a-71g, 72a-72g (mica heater 73) of the upstream group in the X direction and the first and second flat heaters 71h-71r, 72h- 72r (the mica heater 73) is connected to different heater power supplies 105a, 105b respectively. The first and second panel heaters 71a to 71g and 72a to 72g on the upstream side in the X direction and the first and second panel heaters 71h to 71r and 72h to 72r on the downstream side in the X direction are respectively provided, not shown in the figure. The heater power supplies 105a and 105b are controlled by the heater controller (control unit) 104 that receives the detection signal of the temperature sensor and the instruction from the process controller 101, respectively. That is, the first and second panel heaters 71a-71g, 72a-72g of the upstream group in the X direction and the first and second panel heaters 71h-71r, 72h-72r of the downstream group in the X direction are passed through the heater controller 104 respectively. to control their temperature. The first and second panel heaters 71a to 71g and 72a to 72g on the upstream side in the X direction form the preliminary heating section 7a, and the first and second panel heaters 71h to 71r and 72h to 72r on the downstream side in the X direction form the main heating unit. Section 7b. In addition, the preliminary heating part 7a and the main heating part 7b may be connected to the same power supply, and the output of the preliminary heating part 7a and the output of the main heating part 7b may be changed in this power supply.

Exhaust ports 67 are respectively provided on the upper wall and the bottom wall of both ends of the housing 6 in the X direction, and an exhaust unit 68 is connected to the exhaust ports 67 . The exhaust unit 68 operates to exhaust the inside of the casing 6 through the exhaust port 67 . The exhaust port 67 and the exhaust unit 68 constitute an exhaust mechanism for exhausting the inside of the housing 6 . For example, the exhaust port 67 may be formed not only in some numbers but also in the shape of a long hole extending in the Y direction. Exhaust mechanisms are respectively provided at both ends of the housing 6 in the X direction, so that an air curtain (Air Curtain) is formed at the import port 61 and the export port 62, thereby preventing external dust and the like from entering the housing 6 from the import port 61 and the export port 62. . In addition, the exhaust port 67 may be formed not only in a side wall part, but in this case, several may be formed in the X direction, or may be formed in the shape of a long hole extending along the X direction.

On the other hand, the upper wall portion and the bottom wall portion of the center portion in the X direction of the housing 6 are provided with an air intake port 69 serving as an air intake mechanism for inhaling air into the housing. For example, the suction port 69 may be formed not only in some numbers but also in the shape of a long hole extending in the Y direction. Compared with the exhaust port 67, the air intake 69 is set at the central part of the X direction of the housing 6, so that the air in the housing 6 can be reliably prevented from stagnating, so that not only can the heat generated by the heating mechanism 7 Efficient diffusion in the casing 6 can also prevent the sublimation produced in the heat treatment and contained in the resist film from adhering to the inside of the casing 6 . In addition, the air inlet 69 may be formed not only in a side wall part, but in this case, several may be formed in the X direction, or may be formed in the shape of a long hole extended along the X direction. In addition, an air intake device (not shown) may be connected to the air intake port 69, and heated air may be introduced into the housing 6 by the operation of the air intake device.

Next, the heat treatment performed on the substrate G using the heat treatment apparatus (HT) 28 configured as described above will be described.

In the heat treatment device (HT) 28, the substrate G transported by the transport mechanism on the decompression drying unit (DP) 27 side (in the heat treatment device (HT) 31, the development unit (DEV) 30 side) is once Through the import port 61, it is handed over to the roller conveying mechanism 5, and is conveyed by the roller conveying mechanism 5. At the same time, the first and second flat plates whose temperature is controlled by the heater controller 104 pass through the shell 6. Heaters 71, 72 heat it. Therefore, since the conveyance and heating of the substrate are performed simultaneously, the processing time is shortened. Since the substrate G is heated from both sides by the first and second panel heaters 71 and 72, occurrence of warping can be prevented. Once the substrate G transported by the roller transport mechanism 5 passes through the export port 62, it is handed over to the transport mechanism on the side of the cooling unit (COL) 29 (in the case of the heating unit (HT) 31, the side of the cooling unit (COL) 32 ). , so it is conveyed by the advection conveying mechanism. Therefore, since the conveyance of the substrate G during the heat treatment and before and after the heat treatment is only so-called advective conveyance by the roller conveyance mechanism 5 or the like, the substrate G can be safely conveyed.

When performing heat treatment, if the substrate G is to be heated to a predetermined temperature, for example, heated to about 130° C., then the main heating portion 7 b is set to be substantially equal to the predetermined temperature, or a second temperature slightly higher than the predetermined temperature. The first temperature is set to, for example, about 140 to 150°C, and the preheating part 7a is set to a second temperature higher than the first temperature, for example, set to about 170 to 180°C. Then, as shown in FIG. 6 (FIG. 6 is a diagram for explaining the heat treatment of the substrate G using the heat treatment device (HT) 28), the substrate G conveyed by the roller conveyance mechanism 5, in the preliminary heating part 7a, Heating by the second temperature (referring to Fig. 6 (a)), after making it heat up rapidly to the specified temperature or close to the first temperature, in the main heating part 7b, heating under the first temperature condition (referring to Fig. 6 ( b)), so that the prescribed temperature can be maintained, and also the heat treatment time can be shortened. Preferably, the preheating section 7a is provided in such a way that the substrate G conveyed by the roller conveyance mechanism 5 passes when heated to a temperature close to the first temperature so as not to heat the substrate G to an unnecessary high temperature.

In addition, since the arrangement pitch of the first panel heaters 71 is equal to that of the second panel heaters 72, by setting the upper and lower corresponding first and second panel heaters 71, 72 to substantially equal heating temperatures , can reliably prevent the substrate G from warping.

Next, another example of the control system of the first and second panel heaters 71 and 72 will be described. FIG. 7 is a conceptual diagram showing another example of the control system of the first and second panel heaters 71 and 72 .

In addition, the main heating part 7b and the preliminary heating part 7a can be divided into several regions along the X direction and the Y direction respectively, and the temperature of each region can be controlled. For example, a region H having the mica heaters 73a and 73d on both sides in the Y direction of the first and second plate heaters 71a to 71c and 72a to 72c constituting the upstream portion in the X direction of the preheating portion 7a has the first And the region I of the mica heaters 73b and 73c in the Y direction central part of the second panel heaters 71a to 71c and 72a to 72c, and the first and second panel heaters having the downstream side part in the X direction constituting the preliminary heating part 7a Area J of the mica heaters 73a and 73d on both sides of the Y direction of 71d to 71g and 72d to 72g, mica heater 73b in the center of the Y direction with the first and second flat heater areas 71d to 71g and 72d to 72g , the region K of 73c, the region L having the mica heaters 73a, 73d on both sides in the Y direction of the first and second flat heaters 71h-71o, 72h-72o constituting the upstream part in the X direction of the main heating part 7b, There are regions M of the mica heaters 73b and 73c at the center in the Y direction of the first and second flat heaters 71h to 71o and 72h to 72o, and the first and second flat plates constituting the downstream side in the X direction of the main heating portion 7b. Regions N of the mica heaters 73a and 73d on both sides of the heaters 71p to 71r and 72p to 72r in the Y direction, and the mica in the central part of the Y direction having the first and second plate heaters 71p to 71r and 72p to 72r Areas O of the heaters 73b and 73c are respectively connected to different heater power supplies 105c-105j, and the heater power supplies 105c-105j are respectively controlled by the heater controller 104 which receives the detection signal from the temperature sensor and the instruction issued by the process controller 101. . In addition, the regions H to O can also be connected to the same power supply, and the output of the regions H to O in the power supply can be changed.

When performing heat treatment, if the substrate G is to be heated to a predetermined temperature, then, considering the heat loss from the side wall portion of the casing 6, in the main heating portion 7b, within the first temperature or temperature range, the region The temperature of O, L is set to be higher than the temperature of zone M, and the temperature of zone N is set higher than the temperature of zone O, L, simultaneously, in the preheating part 7a, in the second temperature or temperature range, The temperature setting of zone I, J is higher than the temperature of zone K, and the temperature setting of zone H is higher than the temperature of zone I, J. That is, as shown in FIG. 8 (a schematic diagram used to illustrate the heating temperature distribution of the preliminary heating part 7a and the main heating part 7b constituting the heat treatment device 28), the main heating part 7b and the preliminary heating part 7a are controlled respectively, so that the temperature is controlled from the outer shell. The central portion of 6 gradually becomes higher toward the corner portion. In this way, not only can the heat treatment time be shortened, but also the preliminary heating part 7a and the main heating part 7b can respectively heat the entire substrate G in the housing 6 to a uniform temperature, and can also improve the quality of the heat treatment.

In addition, as shown in Figure 4(b), the first and second flat heaters 71, 72 can also be composed of several heat sinks 75 extending in the Y direction, and these several heat sinks are arranged along the X direction. 75 plate-shaped heat conductor 74, and cassette heaters 76 mounted on both sides of the heat conductor 74 in the Y direction. In addition to the heating of the heat absorber 75, by heating the cassette heater 76, the temperature of the side portions in the Y direction of the first and second flat heaters 71, 72 becomes higher than that of the center portion in the Y direction, therefore, the preliminary heating portion 7a And the main heating section 7b can respectively heat the entire substrate G to a uniform temperature. In addition, if the bending of the board|substrate is suppressed in the preliminary heating part 7a, the 2nd flat heater 72 of the upper wall part of the main heating part 7b does not need to be provided.

Industrial availability

The present invention is especially suitable for large substrates such as glass substrates for FPDs, but the present invention is not limited to glass substrates, and can be widely used in heat treatment of other substrates such as semiconductor wafers.

Claims (13)

1. a heat treatment apparatus is used for substrate is implemented heat treated, it is characterized in that, comprises;

The conveyance path of conveyance substrate toward the direction; With

The heating arrangements that the substrate of conveyance on described conveyance path is heated, wherein

Described heating arrangements is disposed with preparation heating part and main heating part along described conveyance path from conveyance direction upstream side,

Described main heating part is set at first temperature, and described preparation heating part is set at second temperature higher than described first temperature,

After in described preparation heating part, being heated to substrate near described first temperature, in described main heating part, heat by described first temperature.

2. a heat treatment apparatus is used for substrate is implemented heat treated, it is characterized in that, comprising:

The conveyance path of conveyance substrate toward the direction;

The shell that is provided with around described conveyance path;

The heating arrangements that in described shell, the substrate of conveyance on described conveyance path is heated, wherein,

Described heating arrangements is provided with preparation heating part and main heating part successively in described shell along described conveyance path from conveyance direction upstream side,

Described main heating part is set at first temperature, and described preparation heating part is set at second temperature higher than described the 1st temperature,

After in described preparation heating part, being heated to substrate near described first temperature, in described main heating part, heat by described first temperature.

3. heat treatment apparatus according to claim 2 is characterized in that:

The exhaust gear that in the conveyance direction both ends of described shell are provided with described shell respectively, carries out exhaust.

4. the described heat treatment apparatus of claim 3 is characterized in that:

At the conveyance direction central portion of described shell, be provided with carrying out air-breathing suction mechanism in the described shell.

5. according to each described heat treatment apparatus in the claim 1 to 4, it is characterized in that:

Dispose described preparation heating part, make the substrate of conveyance on described conveyance path pass through when being heated near described first temperature.

6. according to each described heat treatment apparatus in the claim 1 to 4, it is characterized in that:

Described main heating part is set at described first temperature, thereby the temperature that makes conveyance direction downstream is higher than the temperature of conveyance direction upstream side, described preparation heating part is set at described second temperature, thereby makes the temperature of conveyance direction upstream side be higher than the temperature in conveyance direction downstream.

7. according to each described heat treatment apparatus in the claim 1 to 4, it is characterized in that:

Described main heating part and described preparation heating part are set at described first temperature and described second temperature respectively, thereby the temperature of Width both sides that makes described conveyance path is than the Width central portion height of described conveyance path.

8. a heat treatment apparatus is used for substrate is implemented heat treated, it is characterized in that, comprising:

The conveyance path of conveyance substrate toward the direction;

The heating arrangements that the substrate of conveyance on described conveyance path is heated; With

Control the control part of described heating arrangements, wherein

Described heating arrangements is disposed with preparation heating part and main heating part along described conveyance path from conveyance direction upstream side,

Described control part is set in first temperature with described main heating part, and described preparation heating part is set in second temperature higher than described the 1st temperature,

In described preparation heating part, near substrate being heated to described first temperature after, in described main heating part, heat by described first temperature.

9. heat treatment apparatus according to claim 8 is characterized in that;

Described control part is set in described first temperature with described main heating part, so that the temperature in conveyance direction downstream is than the temperature height of conveyance direction upstream side, described preparation heating part is set in described second temperature, so that the temperature of conveyance direction upstream side is than the temperature height in conveyance direction downstream.

10. it is characterized in that according to Claim 8 or 9 described heat treatment apparatus:

Described control part is set in described first temperature and described second temperature with described main heating part and described preparation heating part respectively, thereby the temperature of Width both sides that makes described conveyance path is than the temperature height of the Width central portion of described conveyance path.

11. heating treatment method, be to use heat treatment apparatus that the substrate along the conveyance path towards a direction conveyance is implemented methods of heating treatment, wherein, this heat treatment apparatus disposes preparation heating part and main heating part in turn along described conveyance path from conveyance direction upstream side, this heating treatment method is characterised in that:

Described main heating part is set in first temperature, simultaneously, described preparation heating part is set in second temperature that is higher than described first temperature,

In described preparation heating part, substrate is heated near after described first temperature, in described main heating part, heats by described first temperature.

12. a control program is characterized in that:

When moving this program on computers, come controlled processing unit, thereby implement the described heating treatment method of claim 11 by computer.

13. a computer-readable recording medium is to store the computer-readable recording medium of the control program of operation on computers, it is characterized in that:

Described control program comes controlled processing unit by computer when operation, thereby implements the described heating treatment method of claim 11.

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