CN1945861A - Light emitting diode chip - Google Patents

Abstract

A light emitting diode chip comprises a substrate, an electrostatic conducting layer, a first type doped semiconductor layer, an active layer, a second type doped semiconductor layer, a first electrode and a second electrode. The electrostatic conducting layer is arranged on the substrate, and the first type doped semiconductor layer is arranged on a partial region of the electrostatic conducting layer. In addition, the active layer is disposed on a partial region of the first type doped semiconductor layer, and the second type doped semiconductor layer is disposed on the active layer. In addition, the first electrode is arranged on the first type doped semiconductor layer, and the second electrode is arranged on the second type doped semiconductor layer. The light emitting diode chip of the present invention has an electrostatic conducting layer, so that the light emitting diode chip can be prevented from being damaged by electrostatic discharge.

Description

LED chip

technical field

The present invention relates to a light-emitting diode chip (light-emitting diode chip), and in particular to a light-emitting diode chip with electrostatic discharge protection function (electro static discharge protection).

Background technique

In recent years, light-emitting diode elements can be said to be widely used, and are generally used in traffic lights (traffic lights), large-scale display boards, or as light sources for flat-panel displays. In order to prevent the LED from being damaged by ESD, a common solution is to use an additional diode (such as a Zener diode) in anti-parallel connection with the LED. When electrostatic discharge occurs, the high-voltage characteristics of static electricity will cause the diode used to prevent static electricity to operate in its breakdown voltage (breakdown voltage) region. At this time, the diode connected in anti-parallel with the light-emitting diode can effectively prevent the light-emitting diode from being charged by static electricity. destroy.

FIG. 1A is a schematic diagram of a known flip-chip packaged LED chip, and FIG. 1B is a schematic circuit diagram of the flip-chip package in FIG. 1A . Please refer to FIG. 1A and FIG. 1B at the same time. A known flip-chip LED chip 100 includes a LED 110 and a diode 120 . Wherein, the LED 110 includes a substrate 112 , an N-type doped semiconductor layer 114 , an active layer 116 , a P-type doped semiconductor layer 118 , a transparent conductive layer 119 , an electrode 1 and an electrode 2 . The N-type doped semiconductor layer 114 is disposed on the substrate 112 , and the active layer 116 is disposed between the N-type doped semiconductor layer 114 and the P-type doped semiconductor layer 118 . In addition, the electrode 1 and the transparent conductive layer 119 are disposed on the P-type doped semiconductor layer 118 , while the electrode 2 is disposed on the N-type doped semiconductor layer 114 .

In addition, the aforementioned diode 120 includes an N-type doped region 122 and a P-type doped region 124 , and the LED 110 is connected to the N-type doped region 122 and the P-type doped region 124 on the diode 120 through solders W1 and W2 respectively. In other words, the light-emitting diode 110 and the diode 120 are connected in anti-parallel (as shown in FIG. 1B ), and the electrode 1 of the light-emitting diode 110 and the N-type doped region 122 in the diode 120 are connected to the working voltage V1, and the electrode 2 of the light-emitting diode 110 The P-type doped region 124 in the diode 120 is connected to the working voltage V2.

When electrostatic discharge occurs, the high voltage characteristic of static electricity will make the diode 120 operate in its breakdown voltage (breakdown voltage) region. At this time, the static charge will pass through the diode 120 instead of the LED 110 . In this way, the static charge will be consumed by the diode 120 and be derived from the LED chip 100 , so the diode 120 can effectively protect the LED 110 from being damaged by static electricity.

The LED chip 100 of the above-mentioned flip-chip package needs to use an additional substrate to manufacture the diode 120 in the manufacture, and then, the two (the LED 110 and the diode 120 ) are bonded with solders W1 and W2 . Therefore, higher cost is required in the process.

FIG. 2A is a schematic diagram of another known light emitting diode chip, and FIG. 2B is a schematic circuit diagram of the light emitting diode chip in FIG. 2A . Please refer to FIG. 2A and FIG. 2B at the same time. The known light-emitting diode chip 200 includes a substrate 210, an unintentionally-doped layer (unintentionally-doped layer) 220, an N-type doped semiconductor layer 230, an active layer 240, and a P-type doped semiconductor layer. 250 , transparent conductive layer 251 , first metal layer 260 , first oxide layer 261 , second metal layer 270 , second oxide layer 271 , electrode 3 and electrode 4 .

The above-mentioned unintentionally doped layer 220 is disposed on the substrate 210 , and the N-type doped semiconductor layer 230 is disposed on the unintentionally doped layer 220 . In addition, the active layer 240 is disposed between the P-type doped semiconductor layer 250 and the N-type doped semiconductor layer 230 , and the electrode 3 and the transparent conductive layer 251 are disposed on the P-type doped semiconductor layer 250 . In addition, the electrode 4 is disposed on the N-type doped semiconductor layer 230 . It is worth noting that the electrode 3 is connected to the unintentionally doped layer 220 through the first metal layer 260 in the contact window H1, and the first oxide layer 261 is disposed in the contact window H1, and the first oxide layer 261 can make the first The metal layer 260 is electrically insulated from other film layers (the N-type doped semiconductor layer 230 , the active layer 240 and the P-type doped semiconductor layer 250 ).

The aforementioned electrode 4 is connected to the unintentionally doped layer 220 through the second metal layer 270 in the contact window H2, and the second oxide layer 271 is arranged in the contact window H2. This second oxide layer 271 can make the second metal layer 270 and the second metal layer 270 The N-type doped semiconductor layer 230 is electrically insulated. It should be noted that the first metal layer 260 and the unintentionally doped layer 220 and the second metal layer 270 and the unintentionally doped layer 220 are shottky contacts. Furthermore, electrode 3 is connected to an operating voltage V1 and electrode 4 is connected to an operating voltage V2.

When electrostatic discharge occurs, the high-voltage characteristics of static electricity will cause the diode 202 (shown in FIG. 2B ) to operate in its breakdown voltage region. At this time, the electrostatic charge will flow through the diode 202; 2A shows the electrode 4 , the second metal layer 270 , the unintentionally doped layer 220 , the first metal layer 260 and the electrode 3 . In this way, the static charge will not flow into the LED 201 , thereby causing the LED 201 to be damaged by static electricity. Therefore, the diode 202 can protect the LED 201 from being damaged by static electricity.

However, the first metal layer 260 and the second metal layer 270 of the LED chip 200 must be electrically insulated from the film layers other than the unintentional doped layer 220 and the electrode 3 and the electrode 4 . Therefore, in this known technique, the first oxide layer 261 and the second oxide layer 271 must be formed in the contact holes H1 and H2 . However, the deeper the contact windows H1 and H2 are, the more difficult it is to form the first oxide layer 261 and the second oxide layer 271 in the contact windows H1 and H2. Poor question.

FIG. 3A is a schematic diagram of a known light emitting diode chip, and FIG. 3B is a schematic circuit diagram of the light emitting diode chip in FIG. 3A . Please refer to FIG. 3A and FIG. 3B at the same time, the light emitting diode chip 300 is composed of a light emitting diode 301 and a diode 302 . Wherein, the LED 301 includes a substrate 310 , an N-type doped semiconductor layer 320 , an active layer 330 , a P-type doped semiconductor layer 340 , a transparent conductive layer 350 , an electrode 5 and an electrode 6 .

The N-type doped semiconductor layer 320 is disposed on the substrate 310 , and the active layer 330 is disposed between the P-type doped semiconductor layer 340 and the N-type doped semiconductor layer 320 . In addition, the transparent conductive layer 350 and the electrode 5 are disposed on the P-type doped semiconductor layer 340 , and the electrode 6 is disposed on the N-type doped semiconductor layer 320 .

In addition, the diode 302 is disposed on the substrate 310 , and the diode 302 includes a P-type doped region 362 , an N-type doped region 364 , an electrode 7 and an electrode 8 . Wherein, the electrode 7 is disposed on the P-type doped region 362 , and the electrode 8 is disposed on the N-type doped region 364 . In addition, the electrodes 5 and 8 are connected to the working voltage V1 through wires, and the electrodes 6 and 7 are connected to the working voltage V2 through wires. In other words, the diode 302 is anti-parallel to the LED 301 (as shown in FIG. 3B ).

When electrostatic discharge occurs, the high-voltage characteristics of static electricity will cause the diode 302 (shown in FIG. 3B ) to operate in its breakdown voltage region. At this time, the electrostatic charge will flow through the diode 302 instead of the light-emitting diode 301, and then Prevent the LED 301 from being damaged by electrostatic discharge. However, the electrodes 5 and 8 must be connected by long wires, and if the wires are too long, the reliability of the LED chip 300 may be poor. In addition, since the diode 302 occupies part of the area on the substrate 310 , the light emitting area of the LED 301 is relatively reduced, so that the brightness of the LED 301 is affected.

Contents of the invention

In view of this, the object of the present invention is to provide a light-emitting diode chip with electrostatic discharge protection function, which is not only easy to manufacture but also has good reliability.

To achieve the above or other objectives, the present invention provides a light emitting diode chip, which includes a substrate, an electrostatic conductive layer, a first-type doped semiconductor layer, an active layer, a second-type doped semiconductor layer, a first electrode and a second electrode . Wherein, the electrostatic conduction layer is arranged on the substrate, and the first type doped semiconductor layer is arranged on a partial area of the electrostatic conduction layer. In addition, the active layer is disposed on a part of the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the active layer. In addition, the first electrode is disposed on the first-type doped semiconductor layer, and the second electrode is disposed on the second-type doped semiconductor layer.

In an embodiment of the present invention, the light emitting diode chip further includes a first Schottky contact electrode, the first Schottky contact electrode is disposed on the electrostatic conductive layer, and the first Schottky contact electrode is electrically connected to the second electrode.

In an embodiment of the present invention, the LED chip further includes a first wire, and the first wire is electrically connected to the first Schottky contact electrode and the second electrode.

In an embodiment of the present invention, the light emitting diode chip further includes a second Schottky contact electrode, the second Schottky contact electrode is disposed on the electrostatic conductive layer, and the second Schottky contact electrode is electrically connected to the first electrode.

In an embodiment of the present invention, the LED chip further includes a second wire, and the second wire is electrically connected to the second Schottky contact electrode and the first electrode.

In an embodiment of the present invention, the light emitting diode chip further includes a current blocking layer, for example, the current blocking layer is disposed between the first type doped semiconductor layer and the static electricity conducting layer.

In an embodiment of the present invention, the current blocking layer and the second-type doped semiconductor layer are, for example, materials of the same doping type, and the static conduction layer and the first-type doping semiconductor layer are, for example, materials of the same doping type.

In an embodiment of the present invention, the LED chip further includes a third Schottky contact electrode, the third Schottky contact electrode is disposed on the electrostatic conductive layer, and the third Schottky contact electrode is electrically connected to the first electrode.

In an embodiment of the present invention, the LED chip further includes a third wire, for example, the third wire is electrically connected to the third Schottky contact electrode and the first electrode.

In an embodiment of the present invention, the light emitting diode chip further includes a third Schottky contact electrode, the third Schottky contact electrode is disposed on the electrostatic conductive layer, and the third Schottky contact electrode is electrically connected to the second electrode.

In an embodiment of the present invention, the LED chip further includes a third wire, for example, the third wire is electrically connected to the third Schottky contact electrode and the second electrode.

In an embodiment of the present invention, the LED chip further includes a fourth Schottky contact electrode, the fourth Schottky contact electrode is disposed on the current blocking layer, and the fourth Schottky contact electrode is electrically connected to the first electrode.

In an embodiment of the present invention, the LED chip further includes a fourth wire, for example, the fourth wire is electrically connected to the fourth Schottky contact electrode and the first electrode.

In an embodiment of the present invention, the first-type doped semiconductor layer is, for example, an N-type doped semiconductor layer, and the second-type doped semiconductor layer is, for example, a P-type doped semiconductor layer.

In an embodiment of the present invention, the material of the electrostatic conductive layer includes GaN-based materials, for example.

In one embodiment of the present invention, the active layer includes, for example, a multiple quantum well layer.

In summary, the light emitting diode chip of the present invention has an electrostatic conductive layer, and the electrostatic conductive layer in the light emitting diode chip is disposed between the substrate and the first type doped semiconductor layer. When the electrostatic discharge phenomenon occurs, static electricity will flow through the static conductive layer, and then be exported to the LED chip. Therefore, the light-emitting diode chip of the present invention has the function of electrostatic discharge protection, and its structure is simple and easy to be manufactured.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are specifically cited below and described in detail with accompanying drawings.

Description of drawings

FIG. 1A is a schematic diagram of a conventional flip-chip packaged LED chip.

FIG. 1B is a schematic circuit diagram of the flip-chip package in FIG. 1A .

FIG. 2A is a schematic diagram of another known LED chip.

FIG. 2B is a schematic circuit diagram of the LED chip in FIG. 2A .

FIG. 3A is a schematic diagram of a known LED chip.

FIG. 3B is a schematic circuit diagram of the LED chip in FIG. 3A .

FIG. 4A is a schematic diagram of a light emitting diode chip according to the first embodiment of the present invention.

FIG. 4B is a schematic diagram of an equivalent circuit of a light emitting diode chip according to the first embodiment of the present invention.

FIG. 4C is a schematic diagram of a light emitting diode chip according to a second embodiment of the present invention.

FIG. 4D is a schematic diagram of an equivalent circuit of a light emitting diode chip according to a second embodiment of the present invention.

FIG. 5A is a schematic diagram of a light emitting diode chip according to a third embodiment of the present invention.

FIG. 5B is a schematic diagram of an equivalent circuit of a light emitting diode chip according to a third embodiment of the present invention.

FIG. 5C is a schematic diagram of a light emitting diode chip according to a fourth embodiment of the present invention.

5D is a schematic diagram of an equivalent circuit of a light emitting diode chip according to a fourth embodiment of the present invention.

FIG. 6A is a schematic diagram of a light emitting diode chip according to a fifth embodiment of the present invention.

FIG. 6B is a schematic diagram of an equivalent circuit of a light emitting diode chip according to a fifth embodiment of the present invention.

Description of main component marking

1, 2, 3, 4, 5, 6, 7, 8: electrodes

10: First wire

20: Second wire

30: Third wire

40: Fourth wire

100, 200, 300, 400, 500, 600, 700, 800: LED chips

110, 201, 301, 401, 501, 601, 701, 801: LED

120, 202, 302, 402, 502, 602, 702, 802: Diodes

112, 210, 310, 410: substrate

114, 230, 320: N-type doped semiconductor layer

116, 240, 330, 440: active layer

118, 250, 340: P-type doped semiconductor layer

119, 251, 350, 460: transparent conductive layer

122, 364: N-type doped region

124, 362: P-type doped region

220: Unintentionally doped layer

260: first metal layer

261: first oxide layer

270: second metal layer

271: second oxide layer

412: buffer layer

420: Static conductive layer

430: first type doped semiconductor layer

432: N-type coating

450: Second-type doped semiconductor layer

452: P-type coating layer

B: current blocking layer

C1, C2, C3: wires

M1: first electrode

M2: second electrode

M3: third electrode

M4: fourth electrode

M5: fifth electrode

S1: First Schottky contact electrode

S2: Second Schottky contact electrode

S3: The third Schottky contact electrode

S4: Fourth Schottky contact electrode

H1, H2: contact window

V1, V2: working voltage

W1, W2: solder

I, II: path

Detailed ways

first embodiment

FIG. 4A is a schematic diagram of a light emitting diode chip according to the first embodiment of the present invention, and FIG. 4B is a schematic diagram of an equivalent circuit of the light emitting diode chip according to the first embodiment of the present invention. Please refer to FIG. 4A and FIG. 4B at the same time. The LED chip 400 of the present invention includes a substrate 410, an electrostatic conductive layer 420, a first-type doped semiconductor layer 430, an active layer 440, a second-type doped semiconductor layer 450, and a first electrode. M1 and the second electrode M2. Wherein, the electrostatic conduction layer 420 is disposed on the substrate 410 . Generally speaking, we can selectively form the buffer layer 412 between the substrate 410 and the electrostatic conductive layer 420 to improve the lattice matching properties of the electrostatic conductive layer 420 and the substrate 410 . The material of the aforementioned buffer layer 412 is, for example, AlaGabIn1-a-bN (0≤a, b<1; 0≤a+b≤1), and the material of the static conduction layer 420 is, for example, GaN-based materials.

Based on the above, the first-type doped semiconductor layer 430 of this embodiment is disposed on a partial area of the electrostatic conduction layer 420 . In addition, the active layer 440 is disposed on a partial region of the first-type doped semiconductor layer 430 , and the second-type doped semiconductor layer 450 is disposed on the active layer 440 . The first-type doped semiconductor layer 430 is, for example, an N-type doped semiconductor layer, the second-type doped semiconductor layer 450 is, for example, a P-type doped semiconductor layer, and the active layer 440 is, for example, a multiple quantum well layer.

Generally speaking, the light-emitting principle of the light-emitting diode chip 400 is mainly through the combination of electrons and holes in the active layer 440 to generate photons. However, the mobility (mobility) of electrons and holes in the active layer 440 is not the same, and this It will affect the combination probability of electrons and holes in the active layer 440 . Therefore, in this embodiment, for example, an N-type cladding layer (cladding layer) 432 can be disposed between the first-type doped semiconductor layer 430 and the active layer 440, and a P-type cladding layer 452 can be disposed between the second-type doped semiconductor layer, for example. between layer 450 and active layer 440 . The main function of the N-type cladding layer 432 and the P-type cladding layer 452 is to increase the probability of combining electrons and holes in the active layer 440 .

In addition, the first electrode M1 is disposed on the first-type doped semiconductor layer 430 , and the second electrode M2 is disposed on the second-type doped semiconductor layer 450 . The light-emitting diode chip 400 of this embodiment can be provided with a transparent conductive layer 460 on the second-type doped semiconductor layer 450, and the material of the transparent conductive layer 460 is, for example, indium tin oxide. In addition, the light-emitting diode chip 400 of this embodiment also includes a first Schottky contact electrode S1, which is disposed on the electrostatic conductive layer 420, and the material of the first Schottky contact electrode S1 is, for example, nickel (Ni), gold (Au ), aluminum (Al), chromium (Cr) and titanium nitride (TiN) formed metal film layer. The first Schottky contact electrode S1 is electrically connected to the second electrode M2, for example, through the first wire 10. It is worth noting that the interface between the first Shottky contact electrode S1 and the electrostatic conductive layer 420 is a shottky junction.

According to the above, the first electrode M1 is connected to the working voltage V2 , and the second electrode M2 is connected to the working voltage V1 through the first wire 10 . When the light-emitting diode chip 400 operates at a normal voltage, since the interface between the electrostatic conductive layer 420 and the first Schottky contact electrode S1 is a Schottky junction, the current will flow through the path I, thereby making the current shown in FIG. 4B The light emitting diode 401 emits light.

When the electrostatic discharge phenomenon occurs, the high voltage of static electricity may be applied to the first electrode M1, and the high voltage characteristic of the static electricity will make the diode 402 (as shown in FIG. 4B ) operate in its breakdown voltage region, so that the static electricity flows through the diode 402 . In other words, the static electricity flows through the path II (as shown in FIG. 4A ), which sequentially flows from the first electrode M1 , the first type doped semiconductor layer 430 , and the static electricity conducting layer 420 to the first Schottky contact electrode S1 . In this way, the static electricity will be consumed by the diode 402 and led out from the LED chip 400 through the first wire 10 , so as to prevent the LED 401 from being damaged by electrostatic discharge.

In the light emitting diode chip 400 of the present invention, the static electricity conducting layer 420 is used as a path for eliminating static electricity, so as to prevent the light emitting diode chip 400 from being damaged by static electricity. Compared with the known technology, the structure of the present invention is relatively simple, and it is relatively easy to manufacture. In addition, since the distance between the second electrode M2 and the first Schottky contact electrode S1 is shorter than the known distance between the electrodes 5 and 8 (as shown in FIG. 3A ). Therefore, the short first wire 10 can avoid the problem of poor reliability of the LED chip 400 in the prior art.

second embodiment

FIG. 4C is a schematic diagram of a light emitting diode chip according to the second embodiment of the present invention, and FIG. 4D is a schematic diagram of an equivalent circuit of the light emitting diode chip according to the second embodiment of the present invention. Please refer to FIG. 4C and FIG. 4D at the same time. The second embodiment is similar to the first embodiment. The main difference between the two lies in the number of electrodes used in this embodiment and the location of Schottky contact electrodes. In detail, the light emitting diode chip 500 of this embodiment further includes a second Schottky contact electrode S2, the second Schottky contact electrode S2 is disposed on the electrostatic conductive layer 420, and the second Schottky contact electrode S2 is, for example, in the form of a second Schottky contact electrode S2. The wire 20 is electrically connected to the first electrode M1.

When the light-emitting diode chip 500 operates at a normal voltage, since the interface between the electrostatic conductive layer 420 and the second Schottky contact electrode S2 is a Schottky junction, the current will flow through the path I, thereby making the current shown in FIG. 4D The light emitting diode 501 emits light.

When the electrostatic discharge phenomenon occurs, the high voltage of static electricity may be applied to the first electrode M1 and the second Schottky contact electrode S2, and the high voltage characteristic of the static electricity will make the diode 502 (as shown in FIG. 4D ) in its breakdown voltage region operation, so that static electricity flows through the diode 502. In other words, the static electricity flows through the path II (as shown in FIG. 4C ), which sequentially flows from the second Schottky contact electrode S2 , the electrostatic conductive layer 420 to the first Schottky contact electrode S1 . In this way, the static electricity will be consumed by the diode 502 and led out from the LED chip 500 through the first wire 10 , so as to prevent the LED 501 from being damaged by electrostatic discharge.

It is worth noting that, as long as the interface between the first Schottky contact electrode S1 and the second Schottky contact electrode S2 and the electrostatic conductive layer 420 is a Schottky junction, it is not intended in this embodiment The interface between the first Schottky contact electrode S1 and the electrostatic conductive layer 420 and the interface between the second Schottky contact electrode S2 and the electrostatic conductive layer 420 must be Schottky junctions at the same time.

third embodiment

FIG. 5A is a schematic diagram of an LED chip according to the third embodiment of the present invention, and FIG. 5B is a schematic diagram of an equivalent circuit of the LED chip according to the third embodiment of the present invention. Please refer to FIG. 5A and FIG. 5B at the same time. This embodiment is very similar to the second embodiment. The main difference between the two is that: the LED chip 600 of this embodiment also includes a current blocking layer B, which is, for example, disposed on the electrostatic conductive layer 420 and the first-type doped semiconductor layer 430, and the doping type of the material of the current blocking layer B is different from the doping type of the electrostatic conductive layer 420, the material of the current blocking layer B can be GaN-based Or it is made of insulating material.

In detail, the current blocking layer B and the second-type doped semiconductor layer 450 are, for example, materials of the same doping type, and the static conduction layer 420 and the first-type doping semiconductor layer 430 are, for example, materials of the same doping type. In addition, the LED chip 600 of this embodiment includes, for example, a third Schottky contact electrode S3 , which replaces the second Schottky contact electrode S2 shown in FIG. 4C .

In this embodiment, the third Schottky contact electrode S3 is disposed on the electrostatic conductive layer 420 , for example. It should be noted that the interface between the third Schottky contact electrode S3 and the electrostatic conductive layer 420 is a Schottky junction. In addition, the third Schottky contact electrode S3 is electrically connected to the first electrode M1 by, for example, a third wire 30 . In addition, the light emitting diode chip 600 of the present embodiment, for example, is provided with a third electrode M3 on the electrostatic conductive layer 420 , and the third electrode M3 is electrically connected to the second electrode M2 by, for example, a wire C1 .

When the light-emitting diode chip 600 operates at a normal voltage, since the interface between the electrostatic conductive layer 420 and the third Schottky contact electrode S3 is a Schottky junction, current will flow through the path I, thereby making the light emitting diode shown in FIG. 5B Diode 601 emits light.

When the electrostatic discharge phenomenon occurs, the high voltage of static electricity may be applied to the first electrode M1 and the third Schottky contact electrode S3 (the third wire 30), and the high voltage characteristic of the static electricity will make the diode 602 (as shown in FIG. 5B ) in its Operates in the breakdown voltage region, allowing static current to flow through the diode 602 . In other words, the static electricity will flow through the path II, which flows from the third Schottky contact electrode S3 and the static electricity conducting layer 420 to the third electrode M3 in sequence. In this way, the static electricity will be consumed by the diode 602 and led out from the LED chip 600 through the wire C1 , so as to prevent the LED 601 from being damaged by electrostatic discharge.

It is worth noting that the static electricity elimination path II is the third Schottky contact electrode S3, the static electricity conducting layer 420, and the third electrode M3 in sequence. Therefore, static electricity is not easy to cause damage to the film layers other than the above, which ensures that the light emitting diode 601 Protected from electrostatic discharge damage.

Fourth embodiment

FIG. 5C is a schematic diagram of an LED chip according to the fourth embodiment of the present invention, and FIG. 5D is a schematic diagram of an equivalent circuit of the LED chip according to the fourth embodiment of the present invention. Please refer to FIG. 5C and FIG. 5D at the same time. This embodiment is very similar to the third embodiment. The main difference between the two lies in the location of the Schottky contact electrodes in this embodiment and the third embodiment. In detail, the third Schottky contact electrode S3 of the LED chip 700 of this embodiment is disposed on the electrostatic conductive layer 420 , and the third Schottky contact electrode S3 is electrically connected to the second electrode M2 through the third wire 30 . It should be noted here that the interface between the third Schottky contact electrode S3 and the electrostatic conductive layer 420 is a Schottky junction.

In addition, the light emitting diode chip 700 of this embodiment includes, for example, a fourth electrode M4 disposed on the electrostatic conductive layer 420 , and the fourth electrode M4 is electrically connected to the first electrode M1 by, for example, a wire C2. In this way, the light-emitting diode 601 of this embodiment can also avoid being damaged by electrostatic discharge.

fifth embodiment

FIG. 6A is a schematic diagram of a light emitting diode chip according to a fifth embodiment of the present invention, and FIG. 6B is a schematic diagram of an equivalent circuit of the light emitting diode chip according to the fifth embodiment of the present invention. Please refer to FIG. 6A and FIG. 6B at the same time. This embodiment is very similar to the fourth embodiment. The main difference between the two lies in the location of the Schottky contact electrodes in this embodiment and the fourth embodiment.

In detail, the light-emitting diode chip 800 of this embodiment further includes a fourth Schottky contact electrode S4, which is disposed on the current blocking layer B, and the fourth Schottky contact electrode S4 is, for example, formed as a fourth Schottky contact electrode S4. The wire 40 is electrically connected to the first electrode M1. It is worth noting that the doping types of the materials of the current blocking layer B and the electrostatic conduction layer 420 are different here. The material of the layer 420 is, for example, N-type doped GaN-based material.

When the light-emitting diode chip 800 operates at a normal voltage, since the interface between the electrostatic conductive layer 420 and the fourth Schottky contact electrode S4 is a Schottky junction, current will flow through the path I, thereby making the light emitting diode shown in FIG. 6B Diode 801 emits light.

When the electrostatic discharge phenomenon occurs, the high voltage of static electricity may be applied to the first electrode M1 and the fourth Schottky contact electrode S4 (the fourth wire 40), and the high voltage characteristic of the static electricity will make the diode 802 (as shown in FIG. Operates in the breakdown voltage region, allowing static current to flow through the diode 802 . In other words, the static electricity will flow through the path II, which flows from the fourth Schottky contact electrode S4 , the current blocking layer B, and the static electricity conducting layer 420 to the fifth electrode M5 in sequence. In this way, the static electricity will be consumed by the diode 802 and led out from the LED chip 800 through the wire C3, so as to prevent the LED 801 from being damaged by electrostatic discharge.

In summary, the LED chip of the present invention has at least the following advantages:

1. The LED chip of the present invention includes an electrostatic conduction layer, and the electrostatic conduction layer is disposed between the substrate and the first-type doped semiconductor layer. The light-emitting diode chip of the present invention uses the electrostatic conduction layer as a static discharge path to prevent the light-emitting diode chip from being damaged by static electricity.

2. The light emitting diode chip of the present invention has a simple structure and is easy to manufacture. In addition, in the light emitting diode chip of the present invention, the connecting wires between electrodes are shorter, so the reliability of the light emitting diode chip is also better.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the claims.

Claims (14)

1. A light-emitting diode chip, characterized in that it comprises: Substrate; an electrostatic conductive layer disposed on the substrate; a first-type doped semiconductor layer disposed on a partial region of the electrostatic conduction layer; an active layer disposed on a partial region of the first-type doped semiconductor layer; a second-type doped semiconductor layer disposed on the active layer; a first electrode disposed on the first-type doped semiconductor layer; and The second electrode is arranged on the second type doped semiconductor layer. 2 . The LED chip according to claim 1 , further comprising a first Schottky contact electrode disposed on the electrostatic conductive layer, wherein the first Schottky contact electrode is electrically connected to the second electrode. 3. The LED chip according to claim 2, further comprising a first wire, wherein the first wire electrically connects the first Schottky contact electrode and the second electrode. 4 . The LED chip according to claim 1 , further comprising a second Schottky contact electrode disposed on the electrostatic conductive layer, wherein the second Schottky contact electrode is electrically connected to the first electrode. 5. The LED chip according to claim 4, further comprising a second wire, wherein the second wire electrically connects the second Schottky contact electrode and the first electrode. 6 . The light emitting diode chip according to claim 1 , further comprising a current blocking layer disposed between the first type doped semiconductor layer and the static electricity conducting layer. 7. The LED chip according to claim 6, wherein the current blocking layer and the second-type doped semiconductor layer are materials of the same doping type, and the electrostatic conductive layer and the first-type doped semiconductor layer are The layers are materials of the same doping type. 8. The LED chip according to claim 6, further comprising a third Schottky contact electrode disposed on the electrostatic conductive layer, wherein the third Schottky contact electrode is in contact with the first electrode or the second electrode. The electrodes are electrically connected. 9. The LED chip according to claim 8, further comprising a third wire, wherein the third wire electrically connects the third Schottky contact electrode and the first electrode, or connects the third Schottky contact electrode electrode and the second electrode. 10 . The LED chip according to claim 6 , further comprising a fourth Schottky contact electrode disposed on the current blocking layer, wherein the fourth Schottky contact electrode is electrically connected to the first electrode. 11 . 11. The LED chip according to claim 10, further comprising a fourth wire, wherein the fourth wire electrically connects the fourth Schottky contact electrode and the first electrode. 12 . The LED chip according to claim 1 , wherein the first-type doped semiconductor layer is an N-type doped semiconductor layer, and the second-type doped semiconductor layer is a P-type doped semiconductor layer. 13 . The light emitting diode chip according to claim 1 , wherein a material of the electrostatic conductive layer comprises GaN-based materials. 14 . 14. The LED chip according to claim 1, wherein the active layer comprises a multiple quantum well layer.

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