CN1324719C - a light emitting diode - Google Patents
a light emitting diode Download PDFInfo
- Publication number
- CN1324719C CN1324719C CNB2004100307285A CN200410030728A CN1324719C CN 1324719 C CN1324719 C CN 1324719C CN B2004100307285 A CNB2004100307285 A CN B2004100307285A CN 200410030728 A CN200410030728 A CN 200410030728A CN 1324719 C CN1324719 C CN 1324719C
- Authority
- CN
- China
- Prior art keywords
- electrode
- material layer
- layer
- emitting diode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000002955 isolation Methods 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 230000036961 partial effect Effects 0.000 claims abstract description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229920001807 Urea-formaldehyde Polymers 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 230000009471 action Effects 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 112
- 238000004020 luminiscence type Methods 0.000 description 25
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LGOGWRFWPHMDLS-UHFFFAOYSA-N [S-2].S.[Zn+2].[SeH2] Chemical compound [S-2].S.[Zn+2].[SeH2] LGOGWRFWPHMDLS-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light emitting diode, especially a plane type light emitting diode suitable for quaternary epitaxial layer, which is mainly characterized in that a quaternary epitaxial layer composed of a first material layer, a light emitting layer and a second material layer is formed on a semiconductor substrate, a transparent substrate is fixedly arranged on the upper surface of the second material layer, after the semiconductor substrate is removed, at least one isolation groove and a first extension groove which can penetrate through the first material layer and extend to partial volume of the second material layer are respectively arranged on the lower surface of the first material layer, a first extension electrode is arranged in the first extension groove and can be electrically connected with a first electrode arranged on the surface of the first material layer, so that the first electrode can have approximately the same horizontal position with another second electrode formed on the surface of other parts of the first material layer, thereby facilitating the subsequent manufacturing process, and the light emitting action area of the PN interface is increased, the light emitting brightness is improved, and the service life is prolonged.
Description
Technical field
The present invention relates to a kind of light-emitting diode, especially refer to a kind of plane light-emitting diode that the quaternary place prolongs layer that can be applicable to, not only can make things convenient for the carrying out of subsequent manufacturing processes, can therefore increase the luminous zone of action at PN interface again, thereby improve luminosity and useful life.
Background technology
Light-emitting diode (LED; Light-Emitting Diode) since possess have the life-span long, volume is little, caloric value is low, power consumption is few, reaction speed is fast, the no width of cloth is penetrated and monochromaticjty emitting characteristics and advantage, so be widely used in every products such as indicator light, advertisement plate, traffic signal light, automobile lamp, display pannel, communication appliance, consumer electronics.
Existing light-emitting diode, the light-emitting diode that for example has quaternary extension (epitaxy) layer, as shown in Figure 1, its luminescence component 10 mainly is to go up at semiconductor substrate 11 (as the GaAs substrate) to form an epitaxial loayer 13, and this epitaxial loayer 13 is combined by one first material layer 131, luminescent layer 132 and one second material layer 133 at least.Continue, be installed with one first electrode 17, then be installed with one second electrode 15 at the lower surface of semiconductor substrate 11 at the upper surface of second material layer 133.
Do the time spent when first electrode 17 and second electrode 15, luminescent layer 132 will produce a projection source, for example front lighting L1, L2.Because GaAs substrate 11 has the light source of absorption and lighttight characteristic, output light flux and luminosity influence for light-emitting diode are very big, therefore, also can between the GaAs substrate 11 and first material layer 131, be provided with a reflector layer 19 (also can be described as and disperse Bragg reflecting layer DBR), the back side light L3 that luminescent layer 132 can be produced reflexes to positive bright dipping place whereby, and is shown in dotted line.
Though above-mentioned existing light-emitting diode can produce projection source, its front lighting L2 still can be absorbed by first electrode 17 and can't be projeced into the external world.
For this reason, industry is developed the light-emitting diode structure-improved of multiple quaternary epitaxial loayer, for example shown in Figure 2, its mainly be the upper surface of second material layer 133 at first by an adhesive layer 22 or directly extensional mode be formed with a transparent substrates 21, as GaP substrate (being called as a window layer or thick transparentlayer), more lighttight GaAs substrate 11 is removed.Continue, part epitaxial loayer 235 is removed, being formed with one first groove 23, and expose the part lower surface of second material layer 133 with general semiconductor fabrication.Afterwards, be provided with a conductive layer 29 and second electrode 25 in regular turn in first material layer, 131 lower surfaces again, and be installed with one first electrode 27 in exposed second material layer, 133 lower surfaces.So, when producing light source when luminescent layer 132 effects, its back side light L4 can be projeced into the external world by transparent substrates 21, and can not be subjected to the inhalation effects of first electrode 27, whereby with effective raising luminosity.In addition, utilize second kind of existing structure, can also be conveniently to become a flip-chip LED (Flip-Chip LED; The present invention's structure shown in Figure 10 for example).
Though existing second kind of light-emitting diode can obtain preferable luminous derivation efficient and luminosity, it has following shortcoming:
Must remove part epitaxial loayer 235 for the arrangement of first electrode 27, will lose the luminous zone of action of part relatively and reduce luminosity.
Must remove part epitaxial loayer 235 for the arrangement of first electrode 27, so will cause first electrode 27 and second electrode 25, also improve the difficulty in the follow-up making relatively not at same horizontal level.
Because part luminescent layer 132 will be removed, its luminous zone of action will be squeezed relatively, and the high temperature of so working will concentrate in certain regional extent easily, reduce the useful life of its luminescence component relatively.
Owing to the transparency carrier of unlike material is direct extension or is fixedly arranged on the epitaxial loayer by an adhesive layer that not only manufacture process is loaded down with trivial details, and also will reduce its production qualification rate.
Summary of the invention
Technical problem to be solved by this invention provides a kind of quaternary epitaxial loayer light-emitting diode of novelty, working current density not only can effectively evenly distribute, to improve luminous derivation efficient and luminosity, and first electrode and second electrode can be positioned at same level height position again naturally, and help follow-up easy to make.
Main purpose of the present invention is to provide a kind of light-emitting diode, the technical difficulties that can solve above-mentioned existing light-emitting diode effectively and faced.
Secondary objective of the present invention is to provide a kind of light-emitting diode, need not under the situation that large tracts of land removes the part epitaxial loayer, can allow first electrode obtain the suitable position that sets firmly, whereby with the luminous zone of action of effective raising and output light flux.
Another purpose of the present invention is to provide a kind of light-emitting diode, and first electrode can be positioned at approximate same horizontal level with second electrode, therefore can help the carrying out of follow-up making.
Another purpose of the present invention is to provide a kind of light-emitting diode, and by the luminous zone of action of larger area, it is comparatively even to cause action current to distribute, therefore the useful life that can effectively improve luminescence component.
Another purpose of the present invention is to provide a kind of light-emitting diode, the quaternary epitaxial loayer can be fixedly arranged on the power supply substrate, not only can avoid the absorption effects of extinction substrate or lead, and also can improve the production qualification rate relatively.
For reaching above-mentioned purpose, the invention provides a kind of light-emitting diode, it includes at least: an epitaxial loayer, include one first material layer and one second material layer, wherein the second material series of strata are fixedly arranged on the upper surface of first material layer; One transparent substrates is fixedly arranged on surface on second material layer; One first electrode is fixedly arranged on the part lower surface of first material layer; One second electrode is fixedly arranged on the other parts lower surface of first material layer; At least one extending flute can run through first material layer, and extends to the partial volume of second material layer, and is provided with an extension electrode that can electrically connect with first electrode in extending flute; And at least one isolated groove, be located between first electrode and second electrode, can run through first material layer, and extend to the partial volume of second material layer.
For further understanding and the effect of being familiar with architectural feature of the present invention and being reached, describe preferred embodiment of the present invention in detail below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 is the structure sectional view of existing light-emitting diode;
Fig. 2 is the structure sectional view of another kind of existing light-emitting diode;
Fig. 3 A to Fig. 3 C is respectively the structure sectional view of light-emitting diode one preferred embodiment of the present invention at each making step;
Fig. 4 is the structure sectional view of the present invention such as Fig. 3 C illustrated embodiment;
Fig. 5 A is the structure sectional view of further embodiment of this invention;
Fig. 5 B is the structure upward view of the present invention such as Fig. 5 A illustrated embodiment;
Fig. 6 A is the structure sectional view of further embodiment of this invention;
Fig. 6 B is the present invention's structure upward view of embodiment as shown in Figure 6A;
Fig. 7 A is the structure sectional view of further embodiment of this invention;
Fig. 7 B is the structure upward view of the present invention such as Fig. 7 A illustrated embodiment;
Fig. 8 A is the structure sectional view of further embodiment of this invention;
Fig. 8 B is the structure upward view of the present invention such as Fig. 8 A illustrated embodiment;
Fig. 9 is the structure sectional view of further embodiment of this invention;
Figure 10 is the structure sectional view of further embodiment of this invention;
Figure 11 is the structure sectional view of further embodiment of this invention;
Figure 12 is the structure sectional view of further embodiment of this invention; And
Figure 13 is the structure sectional view of further embodiment of this invention.
Wherein, Reference numeral:
10,100,110,120,130-luminescence component;
The 11-LED substrate;
The 13-epitaxial loayer, 13-first material layer, 132-luminescent layer, 133-second material layer;
15-second electrode, 17-first electrode, 19-reflector layer;
The 21-transparent substrates, 22-adhesive layer, 23-first irrigation canals and ditches, 235-part epitaxial loayer;
25-second electrode, 27-first electrode, 29-conductive layer;
The 31-LED substrate, 33-epitaxial loayer, 331-first material layer, 332-luminescent layer;
333-second material layer, 35-second electrode, 350-second electrode, 37-first electrode;
371-first extending flute, 372-second extending flute, 375-first extension electrode;
The 376-isolated groove, 377-separator, 378-second extension electrode;
The 39-conductive layer, 41-transparent substrates, 42-adhesive layer, 50-luminescence component;
The 60-luminescence component, 65-second electrode;
67-first electrode, 671-first extending flute;
675-first extension electrode, 677-groove separator;
679-surface separator, the 70-luminescence component;
75-second electrode, 77-ohmic contact point
The 79-conductive layer, the 80-luminescence component;
85-second electrode, the 855-conductive layer;
857-ohmic contact point, 858-second conductive projection;
87-first electrode, 871-first extending flute;
875-first extension electrode, 877-groove separator;
878-first conductive projection, 879-surface separator;
The 89-substrate of powering, 890-antistatic protection assembly;
891-ESD first electrode, 892-ESD second electrode;
895-second conductive layer, 897-first conductive layer;
The 90-flip-chip LED, the 91-LED substrate;
931-first material layer, 933-second material layer;
95-second electrode, 951-the 3rd extending flute;
The 96-reflector layer, 97-first electrode;
971-first extending flute, the 974-first ring lateral electrode;
The 98-separator, 990-voltage is adjusted assembly;
991-VRD first electrode, 992-VRD second electrode;
The 995-separator, 997-the 3rd power supply circuits.
Embodiment
See also Fig. 3 A to Fig. 3 C, be respectively the structure sectional view of light-emitting diode one preferred embodiment of the present invention at each making step; As shown in the figure, making of the present invention mainly includes the following step:
At first, semiconductor substrate 31 is provided, GaAs substrate (extinction substrate) for example, and one first material layer 331 is arranged (as N type or P type coating layer), luminescent layer 332 and second material layer 333 (as P type or N type coating layer) of growing up in regular turn in GaAs substrate 31 upper surfaces, so to constitute a quaternary epitaxial loayer 33, as shown in Figure 3A.
Wherein, this luminescent layer 332 can be a PN interface, and can select be for a ternary or quaternary compound made, for example homostyructure, single heterojunction structure, double-heterostructure, the quantum well structure of arsenic gallium aluminium (AlGaAs), AlGaInP (AlGaInP) or AlGaInP.
Moreover, upper surface at second material layer 333 is formed with a transparent substrates 41 by an adhesive layer 42 or direct extensional mode, for example gallium phosphide (GaP), glass (Glass), sapphire (Sapphire), carborundum (SiC), gallium arsenide phosphide (GaAsP), zinc selenide (ZnSe), zinc sulphide (ZnS), selenium zinc sulphide (ZnSSe) or quartz etc., and GaAs substrate 31 light tight and that can absorb projection source removed.Again, cutter is provided with at least one isolated groove 376 and at least one first extending flute 371 in the part position of first material layer, 331 lower surfaces, first material layer 331 of each isolated groove 376 and all penetrable its vertical extent direction of first extending flute 371, luminescent layer 332 and part second material layer 333 volumes are shown in Fig. 3 B.
Certainly, in another embodiment of the present invention, it can be after second material layer 333 forms, continue to grow up one undope concentration but with the made thick photic zone 41 of second material layer, 333 identical materials, quaternary material AlGaInP for example, to replace the formed GaP substrate of the foregoing description, the characteristic that has identical material by the thick photic zone 41 and second material layer 333, the high resistance puzzlement that not only can effectively solve non-ohmic contact and cause, and also can simplify and make flow process and improve the production qualification rate, therefore, applicable to various plane light-emitting diodes.
Again, in isolated groove 376, can or fill other megohmite insulant by spatial separation to become a separator 377, then be provided with first extension electrode 375 with conducting function in first extending flute 371, first extension electrode 375 will electrically connect with second material layer 333, and by the obstruct of isolated groove 376 or separator 377, and with first material layer, 331 electrical isolation.Again, can be installed with one first electrode, 37, the first electrodes 37 at the part lower surface of the upper surface of first extension electrode 375 and first material layer 331 can electrically connect with first extension electrode 375.Then can be installed with a conductive layer 39 and second electrode 35 across separator 376 in regular turn at the other parts lower surface of first material layer 331.So, when first electrode 37 and second electrode, 35 electric actions, its action current can pass luminescent layer 332 to produce a projection source by first extension electrode 375, as back side light L4, as Fig. 3 C and shown in Figure 4.
Again, in order to allow the action current can more even distribution, cause and to enlarge its effect light-emitting area, reduce its working temperature and effectively prolong assembly useful life, therefore isolated groove 376 can be designed to the peripheral position near epitaxial loayer 33, be provided with at least one second extending flute 372 and second extension electrode 378 again and prolonging isolated groove 376 peripheries, each second extension electrode 378 all can electrically connect with first electrode 37 and second material layer 333, and with first material layer, 331 electrical isolation.And the shape of the upward view of first extension electrode 375 and second extension electrode 378 (as Fig. 4,5B, 6B, 7B) can be various forms such as some shapes, strip, annular, semi-circular, circular, rectangle.
Because light-emitting diode of the present invention need not to remove under the situation of large tracts of land epitaxial loayer 235, can set firmly first electrode 37 and second electrode 35, therefore, first electrode 37 and second electrode 35 have the position of approximate same level, and help follow-up making flow process.
Certainly, in order to guide PN the front lighting that the interface is produced smoothly, and do not absorbed by second electrode 35, therefore, this conductive layer 39 also can be one, and to have the material of reflective characteristic made.
In addition, see also Fig. 5 A and Fig. 5 B, be respectively the structure sectional view and the upward view of further embodiment of this invention; As shown in the figure, in this embodiment, it mainly is that first material layer, 333 part lower surfaces at light-emitting diode 50 are installed with large-area second electrode 350, conduction and reflection function by second electrode 350, to replace the conductive layer 39 of the foregoing description, so, not only can allow outside the more even distribution of action current, also can directly reflect the front light source to become a reflection source L5, whereby with its output light flux of relative raising.
Continue, see also Fig. 6 A and Fig. 6 B, be respectively the structure sectional view and the upward view of further embodiment of this invention; As shown in the figure, luminescence component 60 of the present invention mainly is that cutter is provided with at least one first material layer 331 that runs through on the appropriate location of one first material layer 331, first extending flute 671 of luminescent layer 332 and part second material layer 333, and on first extending flute, 671 inner surfaces and first electrode, 37 predeterminated positions, be provided with the groove separator 677 and the surperficial separator 679 of a tool insulation characterisitic individually, being provided with first extension electrode, 675, the first extension electrodes 675 with conductive characteristic in groove separator 677 again can electrically connect with first electrode 67 of being located at surperficial separator 679 upper surfaces.For operating current can evenly be distributed, therefore directly be provided with one second electrode 65 on remaining first material layer 331 surfaces again.So, not only can reach equally first electrode 67 have with the approximate same level heights of second electrode 65 outside, and because the active area that luminescent layer 332 is removed is littler, and the peripheral position of most of luminescent layer 332 can obtain to keep, so its output light flux can obtain significantly to promote.
Again, see also Fig. 7 A and Fig. 7 B, be the structure sectional view and the upward view of further embodiment of this invention; As shown in the figure, it mainly is that second electrode 65 with the foregoing description changes to the second less electrode 75 of active area, and the lower surface uniformly dispersing of first material layer 331 has a plurality of ohmic contact points 77, then be provided with a conductive layer 79 between second electrode 75, ohmic contact point 77 and first material layer 331, action current can be evenly distributed in most of sphere of action of epitaxial loayer 33 whereby, not only its output light flux can be effectively improved, also its useful life can be prolonged.
Again, see also Fig. 8 A and Fig. 8 B, be the structure sectional view and the upward view of further embodiment of this invention; As shown in the figure, it mainly is the peripheral position of closing on of first extending flute 871, groove separator 877 and first extension electrode 875 being located at first material layer 331, and other lower surface position of first material layer 331 then is respectively equipped with a plurality of ohmic contact points 857 and a conductive layer 855.The part surface of this conductive layer 855 is provided with a surperficial separator 879 in regular turn and first electrode, 87, the first electrodes 87 can electrically connect with each first extension electrode 875 equally, and the other part surface of conductive layer 855 then is provided with one second electrode 85.
Between first electrode 87 and second electrode 85, do the time spent, except the back side light L4 and reverberation L5 of previous described embodiment, because first extending flute 871 and first extension electrode 875 have moved to the peripheral position of epitaxial loayer 33, therefore, the luminescent layer 332 that first electrode, 87 vertical extent positions are not removed down can act on and produce projection source, for example back side light L6 and reverberation L7, not only first electrode 87 has and second electrode, 85 approximately uniform level heights whereby, and, also can enlarge the sphere of action of luminescent layer 332.
Certainly, in order effectively to improve luminosity, conductive layer 855 also can select one, and to have the material of good reflecting effect made.
In addition, see also Fig. 9, be the structure sectional view of further embodiment of this invention; As shown in the figure, it is inverted the luminescence component 80 of the foregoing description, causes first electrode 87 to electrically connect with first conducting wire 897 of being located on the power supply substrate 89 by one first conductive projection 878.In like manner, 85 at second electrode electrically connects with one second conducting wire of being located at equally on this power supply substrate 89 895 by one second conductive projection 858, so, a flip-chip LED 90 (Flip Chip LED) can be become, back side light L4, L6 and reverberation L5, L7 can be produced equally.
Certainly, its first conductive projection 878 and second conductive projection 858 may be selected to be one and have the scolder material of conductive characteristic, the tin ball, containing metal material or any conductive materials are made, it is made, for example ceramic that power supply substrate 89 then may be selected to be the approximate material of the good or thermal coefficient of expansion of a thermal conductivity and epitaxial loayer 33, glass, aluminium nitride, silicon nitride, aluminium oxide, epoxy resin, urea resin, plastics, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate or be covered with dielectric material (as SiO2, TiO2, Si3N4 etc.) carborundum, silicon, materials such as gallium nitride.
Because, luminescence component of the present invention has first electrode 87 and second electrode 85 of approximate or par position, therefore, needed first conductive projection 878 and 858 of second conductive projections can be made as and have identical big small size in its follow-up making, so not only can conveniently make, again can be identical because of first conductive projection 878 and second conductive projection, 858 both sides active force situations, and be unlikely the situation that flip-chip LED 90 deflections take place, therefore can improve the working stability degree of assembly relatively.
Continue, see also Figure 10, be the structure sectional view of further embodiment of this invention.Though above-mentioned each embodiment is to serve as that object is discussed with ternary luminescence component or quaternary luminescence component, according to the technology of the present invention feature, the present invention also can be applicable in the luminescence component of other compound epitaxial loayer, for example the blue light emitting assembly.As shown in the figure, luminescence component 100 mainly is directly to grow up in regular turn one first material layer 931 and second material layer 933 are arranged on a LED substrate (transparent substrates) 91, and can be formed with a PN interface naturally between first material layer 931 and second material layer 933.Be provided with first extending flute 971 that can run through second material layer 933 and part first material layer 931 around the peripheral cutter earlier of luminescence component 100, and be provided with transparent contact layer, ohmic contact layer or the reflector layer 96 with conduction or reflecting effect earlier at the upper surface of second material layer 933, be provided with a separator 98 in the periphery of the reflector layer 96 and second material layer 933 again, cutter is provided with one the 3rd extending flute 951 in the appropriate location of separator 98, causes second electrode 95 directly or by reflector layer 96 to be electrically connected at second material layer 933.Can be provided with one first ring lateral electrode 974 around the peripheral of second material layer 931 and across separator 98, the first ring lateral electrode 974 can be electrically connected at first electrode 97, so also can reach to allow operating current evenly distribute, improve the luminous zone of action and cause first electrode 97 and second electrode 95 is positioned at the purpose of same level height position.
In addition, see also Figure 11, be the structure sectional view of further embodiment of this invention; As shown in the figure, it mainly is to be formed with one first material layer 331 in regular turn on an extinction substrate (GaAs substrate) 31 surfaces, behind the epitaxial loayer 33 of the luminescent layer 332 and second material layer 333, be not installed with a transparent substrates (41) on second material layer, 333 surfaces, be provided with at least one isolated groove 376 and at least one first extending flute 371 but cut a hole respectively at the upper surface of second material layer 333, second material layer 333 of each isolated groove 376 and all penetrable its vertical extent direction of first extending flute 371, luminescent layer 332 and part first material layer 331 volumes are provided with one first extension electrode 375 in first extending flute 371.Again, the appropriate location respectively at second material layer 333 is provided with one first electrode 37 and second electrode 35.Continue, epitaxial loayer 33 covered together with GaAs substrate 31 place on the power supply substrate 89 (or claim Sub Mount), first electrode 37 of epitaxial loayer 33 can be electrically connected at first conductive layer 897 of power supply substrate 89, and second electrode 35 of epitaxial loayer 33 then is electrically connected at second conductive layer 895 of power supply substrate 89.At last, utilize the semiconductor manufacture process to be removed GaAs substrate 31 again, to become a luminescence component 110.
By the power supply substrate 89 thickness to make things convenient for the subsequent manufacturing processes of luminescence component 110, and, because power supply substrate 89 is not to be designed to a light direction, therefore, it may be selected to be good or approaching with the thermal coefficient of expansion of epitaxial loayer 33 material of a thermal conductivity, with craftmanship and the useful life that helps luminescence component 110.
Because luminescence component of the present invention has first electrode 37 and second electrode 35 of approximate or par height, therefore, when forming a flip-chip LED 110 (Flip-Chip LED), and unlike existing structure, need to reach the purpose that two electrodes have the par height by the conductive projection of differing heights, therefore can directly first electrode 37 be electrically connected at first conducting wire 897, second electrode 85 then directly is electrically connected at second conducting wire 895, whereby to simplify manufacture process.
Again, see also Figure 12, be the structure sectional view of further embodiment of this invention; As shown in the figure, it mainly is that power supply substrate 89 with the foregoing description is replaced with an antistatic protection assembly 890.Wherein, ESD on the antistatic protection assembly 890 (electrostatic protection) first electrode 891 can be electrically connected at second electrode 35 of epitaxial loayer 33; its ESD second electrode 892 then is electrically connected at first electrode 37 of epitaxial loayer 33; so epitaxial loayer 33 and antistatic protection assembly 35 can form a reverse parallel connection circuit, and are combined into a luminescence component 120.When luminescence component 120 and when the static discharge phenomenon takes place in manufacturing process or use; one unusual big input voltage Vcc will be formed at the two ends of antistatic protection assembly 890; and cause the breakdown effect (Break Down) of antistatic protection assembly 890; cause extremely greatly count abnormal currents will be by antistatic protection assembly 890, and can not damage epitaxial loayer 33.
At last, see also Figure 13, be the structure sectional view of further embodiment of this invention; As shown in the figure; it mainly is to be provided with the 3rd supply circuit 997 that can electrically connect with first electrode 37 of epitaxial loayer 33 on antistatic protection assembly 990; then be provided with a separator 995 between the 3rd supply circuit 997 and the antistatic protection assembly 990; VRD (voltage adjustment) first electrode 991 is electrically connected at second electrode 35 of epitaxial loayer 33; VRD second electrode 992 then with 33 one-tenth electrical isolation aspects of epitaxial loayer; so epitaxial loayer 33 and antistatic protection assembly 990 can become the luminescence component 130 of the circuit form of connect, and the also variable voltage adjustment assembly 990 that becomes of the antistatic protection assembly 990 of script.Adjust the design that assembly 990 becomes series circuit by epitaxial loayer 33 and voltage, not only have outside the function of anti-surge voltage, also capable of being combinedly go out the close luminescence component of various driving voltages, for the combined luminescent device, for example RGB full-color light-emitting device will have very big benefit.
Aforementioned antistatic protection assembly 890 or voltage are adjusted assembly 990 and be may be selected to be diode, electrostatic discharge protective circuit or other equivalent diode that a Zener diode (Zener Diode), Schottky diode (Schottky Barrier Diode), silicon-based diode, III-V family element are constituted; the selection of its material is preferably considered still can cooperate the thermal coefficient of expansion of epitaxial loayer 33 outside the breakdown voltage (Breakdown Voltage) that luminescence component sets.
Again, in further embodiment of this invention, antistatic protection assembly 890 or voltage are adjusted assembly 990 and also can be selected to be combined with the serial or parallel connection form by a plurality of diodes.And antistatic protection assembly 890 or voltage are adjusted assembly 990 and also can be selected to be electrically connected with a plurality of epitaxial loayers 33, simultaneously a plurality of epitaxial loayers 33 are carried out antistatic pressure protection or driving voltage is adjusted function.
In sum, the present invention relates to a kind of light-emitting diode, refer to a kind of plane light-emitting diode that can be applicable to the quaternary epitaxial loayer especially, not only can make things convenient for the carrying out of subsequent manufacturing processes, can therefore increase the luminous zone of action at PN interface again, cause to be improved luminosity and useful life.
Above said content only is a preferred embodiment of the present invention, is not to be used for limiting scope of the invention process, and all equivalent variations and modifications of carrying out according to main design of the present invention, technical characterictic and spirit all should belong to the present invention's scope required for protection.
Claims (41)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100307285A CN1324719C (en) | 2004-04-01 | 2004-04-01 | a light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100307285A CN1324719C (en) | 2004-04-01 | 2004-04-01 | a light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1564333A CN1564333A (en) | 2005-01-12 |
| CN1324719C true CN1324719C (en) | 2007-07-04 |
Family
ID=34481151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100307285A Expired - Fee Related CN1324719C (en) | 2004-04-01 | 2004-04-01 | a light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1324719C (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097567B (en) * | 2007-07-26 | 2013-08-07 | 晶元光电股份有限公司 | Light emitting element |
| CN101355121B (en) * | 2007-07-26 | 2011-02-09 | 晶元光电股份有限公司 | Light emitting element |
| DE102008022942A1 (en) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
| US8089091B2 (en) * | 2009-06-18 | 2012-01-03 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with a contact formed on a textured surface |
| DE102009060747B4 (en) * | 2009-12-30 | 2025-01-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | semiconductor chip |
| CN102130284A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Monochromatic LED chip and manufacturing method thereof |
| CN101984511B (en) * | 2010-11-10 | 2016-06-01 | 秦彪 | LED chip and LED wafer and manufacturing method of chip |
| CN102130287A (en) * | 2010-12-22 | 2011-07-20 | 晶科电子（广州）有限公司 | Light-emitting diode (LED) device with electrostatic damage protection function and manufacturing method thereof |
| CN102709430A (en) * | 2011-03-28 | 2012-10-03 | 同方光电科技有限公司 | Light emitting diode (LED) with increased luminous efficiency and manufacturing method thereof |
| CN102339913B (en) * | 2011-09-30 | 2013-06-19 | 映瑞光电科技(上海)有限公司 | High-voltage LED (Light Emitting Diode) device and manufacturing method thereof |
| CN102354723B (en) * | 2011-10-24 | 2013-11-20 | 南昌黄绿照明有限公司 | Flip semiconductor luminescent device and manufacturing method thereof |
| CN102427107A (en) * | 2011-12-09 | 2012-04-25 | 祝进田 | High-power white light-emitting diode (LED) flip chip and manufacturing method thereof |
| CN102931313B (en) * | 2012-08-30 | 2014-11-19 | 安徽三安光电有限公司 | Inverted light emitting diode and manufacture method thereof |
| CN104600166A (en) * | 2013-10-31 | 2015-05-06 | 无锡华润华晶微电子有限公司 | LED chip structure and preparation method thereof |
| CN109599465A (en) * | 2017-09-30 | 2019-04-09 | 展晶科技(深圳)有限公司 | LED chip construction |
| CN109638132A (en) * | 2018-11-30 | 2019-04-16 | 广东德力光电有限公司 | Upside-down mounting red LED chip structure and preparation method thereof |
| CN111261766A (en) * | 2020-01-21 | 2020-06-09 | 厦门乾照光电股份有限公司 | Flip film LED chip structure and preparation method thereof |
| JP6995227B1 (en) * | 2021-01-07 | 2022-01-14 | 日機装株式会社 | Manufacturing method of semiconductor light emitting device and semiconductor light emitting device |
| CN114284399B (en) * | 2021-11-24 | 2023-11-10 | 利亚德光电股份有限公司 | Processing method of LED display module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5255279A (en) * | 1990-05-09 | 1993-10-19 | Sharp Kabushiki Kaisha | Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device |
| JP2000315820A (en) * | 1999-04-27 | 2000-11-14 | Shogen Koden Kofun Yugenkoshi | High intensity light emitting diode |
| US6319778B1 (en) * | 2000-08-10 | 2001-11-20 | United Epitaxy Company, Inc. | Method of making light emitting diode |
| CN1477722A (en) * | 2003-07-23 | 2004-02-25 | ���ڿƼ��ɷ�����˾ | Structure Improvement of Light Emitting Diodes |
-
2004
- 2004-04-01 CN CNB2004100307285A patent/CN1324719C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5255279A (en) * | 1990-05-09 | 1993-10-19 | Sharp Kabushiki Kaisha | Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device |
| JP2000315820A (en) * | 1999-04-27 | 2000-11-14 | Shogen Koden Kofun Yugenkoshi | High intensity light emitting diode |
| US6319778B1 (en) * | 2000-08-10 | 2001-11-20 | United Epitaxy Company, Inc. | Method of making light emitting diode |
| CN1477722A (en) * | 2003-07-23 | 2004-02-25 | ���ڿƼ��ɷ�����˾ | Structure Improvement of Light Emitting Diodes |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1564333A (en) | 2005-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1324719C (en) | a light emitting diode | |
| CN103078032B (en) | Light emitting device | |
| KR100845856B1 (en) | Light emitting device package and its manufacturing method | |
| CN102194932B (en) | Light emitting diode and fabrication method thereof | |
| CN1233045C (en) | Luminescent device | |
| US9153622B2 (en) | Series of light emitting regions with an intermediate pad | |
| KR102080778B1 (en) | Light emitting device package | |
| CN103972374B (en) | Multi-vertical LED package structure | |
| CN102148303B (en) | Light emitting device, method of manufacturing the same, light emitting device package and lighting system | |
| CN103426988A (en) | Semiconductor light emitting device | |
| CN101076900A (en) | Light emitting device having a plurality of light emitting units and package for mounting the light emitting device | |
| US10873005B2 (en) | Semiconductor element and semiconductor element package comprising same | |
| CN103094435A (en) | Light emitting device and light emitting device package | |
| CN102891160A (en) | Semiconductor light emitting device and light emitting apparatus | |
| CN105322084A (en) | Light emitting device module | |
| US8445920B1 (en) | Light emitting diode | |
| KR101877396B1 (en) | Light emitting device | |
| CN103794705B (en) | Luminaire | |
| CN114864781A (en) | Semiconductor device | |
| KR100936058B1 (en) | Nitride light emitting device manufacturing method and nitride light emitting device with improved luminous efficiency using a gradient incident deposition method | |
| CN103035807A (en) | Light-emitting diode grain, manufacture method thereof and backlight module | |
| CN1529364A (en) | Light-emitting elements that increase the luminous action area | |
| CN101043061A (en) | Light emitter packaging structure capable of preventing electrostatic damage and manufacturing method thereof | |
| CN104538537A (en) | Light-emitting diode with conducted sidewall and back portion and manufacturing process of the same | |
| KR102239628B1 (en) | Lens and light emitting device module including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070704 Termination date: 20190401 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |