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CN1736851A - Method for Batch Processing of Metal Micro Components - Google Patents

Method for Batch Processing of Metal Micro Components Download PDF

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Publication number
CN1736851A
CN1736851A CN 200510028219 CN200510028219A CN1736851A CN 1736851 A CN1736851 A CN 1736851A CN 200510028219 CN200510028219 CN 200510028219 CN 200510028219 A CN200510028219 A CN 200510028219A CN 1736851 A CN1736851 A CN 1736851A
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mould
electroforming
high molecular
micro
metal micro
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刘景全
方华斌
陈迪
赵小林
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Shanghai Jiao Tong University
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Abstract

Disclosed is a method for batch preparation of metallic microelement, belonging to the technique field of Micro Electro-Me-chanical Systems. Firstly preparing die according to the form of re-prepared microelement, stamping the macromolecular polymer substrate with the die to batch prepare macromolecular polymer die, surface conductive treatment to the macromolecular polymer, micro-electroforming the macromolecular polymer die, rubbing the extra metal on the surface, and removing the macromolecular polymer substrate, then the needed metallic microelement is prepared. In the invention, it decreases the complexity of batch preparation of metallic microelement, accelerates the technique flow, and solves the problem of preparing metallic microelement in low cost and with batch production. The preparation method is characterized in that the technique is simple, the flexibility and uniformity is perfect, the cost is low, and it is suit for mass production.

Description

金属微构件批量加工方法Method for Batch Processing of Metal Micro Components

技术领域technical field

本发明涉及的是一种微机电技术领域的加工方法,具体地说,是一种金属微构件批量加工方法。The invention relates to a processing method in the field of micro-electromechanical technology, in particular to a batch processing method for metal micro-components.

背景技术Background technique

微机电系统(MEMS:Micro Electro Mechanical Systems)器件的广泛应用使得多种微加工技术蓬勃发展。目前国际上用于制造微型机电系统的微机械加工技术主要有两种:一种是基于微电子技术发展起来的表面硅微加工技术和体硅微加工技术。利用该技术已成功研制出部分硅微机械,如微加速度计、微压力传感器、微马达、微型泵,但是该技术只能对硅材料进行微加工,极大的限制了其应用范围。第二种工艺是采用LIGA技术(德文 Lithografie,Galvanoformung, Abformung,代表三个主要工艺:X光深层光刻工艺、微电铸工艺和微复制技术),该技术的优点是它能制造三维的金属或塑料微机械器件,获得的器件具有较大的高深宽比和精细的结构,侧壁陡峭、表面平整,是X光深层光刻、微电铸和微复制工艺的完美结合,但其需要昂贵的同步辐射X光光源和X光掩模板,而且加工周期较长,因此其应用也受到限制。近几年开发出了多种替代工艺,其中基于UV-LIGA的SU-8胶技术发展迅速,该技术采用超厚SU-8负胶光刻胶,利用紫外光源(UV: Ultra violet)代替LIGA技术中的同步辐射X光源进行曝光,再经过微电铸、微复制等工艺,可以批量制备各种材质的器件。The wide application of micro-electromechanical systems (MEMS: Micro Electro Mechanical Systems) devices has led to the vigorous development of various micro-processing technologies. At present, there are two main types of micromachining technologies used in the manufacture of microelectromechanical systems in the world: one is surface silicon micromachining technology and bulk silicon micromachining technology developed based on microelectronics technology. Some silicon micromachines have been successfully developed by using this technology, such as micro accelerometers, micro pressure sensors, micro motors, and micro pumps, but this technology can only micro process silicon materials, which greatly limits its application range. The second process is to use LIGA technology (German Li thografie, Galvanoformung , Abformung , representing three main processes: X-ray deep lithography process, micro-electroforming process and micro-replication technology), the advantage of this technology is that it can Manufacture three-dimensional metal or plastic micromechanical devices, the obtained devices have a large high aspect ratio and fine structure, with steep side walls and flat surfaces. It is a perfect combination of X-ray deep lithography, micro-electroforming and micro-replication processes. However, it requires expensive synchrotron radiation X-ray light sources and X-ray masks, and the processing cycle is long, so its application is also limited. In recent years, a variety of alternative processes have been developed , among which SU-8 adhesive technology based on UV-LIGA has developed rapidly. Instead of the synchrotron radiation X light source in LIGA technology for exposure, and then through micro-electroforming, micro-replication and other processes, devices of various materials can be produced in batches.

经对现有技术文献的检索发现,H.Lorenz等人在《Sensors and ActuatorsA:Physical》,NO.64(1998)pp33-39页上撰文:“High-aspect-ratio,ultrathick,negative-tone near-UV photoresist and its application forMEMS”(“高深宽比、超厚、近紫外负性光刻胶及其在MEMS中的应用,《传感器及执行器A:物理版》)。其中所讨论的是基于UV-LIGA的SU-8胶技术及其应用(制备微齿轮、微线圈等):首先在备好导电层的基片上甩SU-8胶,再经过紫外光曝光,显影后得到SU-8胶模具,然后进行微电铸,之后去除SU-8胶以及基片即得到所需的金属构件。存在的缺点是SU-8胶工艺过程较复杂,周期比较长,而且每次的去胶是比较困难的一道工序,因此在批量生产时,用制得的金属构件作为模具,采用模压成型技术、微电铸技术进行微复制,即:先准备一块导电基板,然后在上面涂覆一层塑料,通过模压工艺在基片上获得塑料模具,然后对该样品进行微电铸,去除导电基板及塑料后即可获得金属产品。该技术的缺点是微复制工艺繁琐,每次需要准备导电基板,再涂覆流体状态的塑料;还要根据金属器件的高度来准确控制所涂覆塑料的厚度;而且模压后塑料微结构空隙会形成塑料残留层,电铸的部分不能完全导电,需要将残留层刻蚀掉,其工艺比较复杂、成本高。Found through the retrieval of prior art document, the people such as H.Lorenz writes on " Sensors and Actuators A: Physical ", NO.64 (1998) pp33-39 page: " High-aspect-ratio, ultrathick, negative-tone near -UV photoresist and its application forMEMS" ("High aspect ratio, ultra-thick, near-ultraviolet negative photoresist and its application in MEMS, "Sensors and Actuators A: Physical Edition"). The discussion is based on UV-LIGA's SU-8 glue technology and its application (preparation of micro-gears, micro-coils, etc.): First, throw SU-8 glue on the substrate with a conductive layer, then expose it to ultraviolet light, and get SU-8 glue after development Mold, then carry out micro-electroforming, and then remove the SU-8 glue and the substrate to get the required metal components. The disadvantage is that the SU-8 glue process is more complicated, the cycle is longer, and each time the glue is removed. Difficult process, so in mass production, use the prepared metal component as a mold, use molding technology, micro-electroforming technology for micro-replication, that is: first prepare a conductive substrate, and then coat a layer of plastic on it, The plastic mold is obtained on the substrate by molding process, and then the sample is subjected to micro-electroforming, and the metal product can be obtained after removing the conductive substrate and plastic. The disadvantage of this technology is that the micro-replication process is cumbersome, and the conductive substrate needs to be prepared every time, and then coated The thickness of the coated plastic must be accurately controlled according to the height of the metal device; and after molding, the plastic microstructure voids will form a plastic residual layer, and the electroformed part cannot be completely conductive, so the residual layer needs to be etched The process is relatively complicated and the cost is high.

发明内容Contents of the invention

本发明的目的在于克服现有技术中的不足和缺陷,提供一种金属微构件批量加工方法,使其通过制备模具、微复制技术、微电铸工艺,在高分子聚合物基片上制备所需的金属微构件,加工方法具有工艺简单、灵活性好、一致性好、成本低、适于大批量生产等特点。The purpose of the present invention is to overcome the deficiencies and defects in the prior art, and provide a batch processing method for metal micro components, which can prepare the required components on the high molecular polymer substrate through the preparation of molds, micro-replication technology, and micro-electroforming technology. The metal micro-components, the processing method has the characteristics of simple process, good flexibility, good consistency, low cost, and suitable for mass production.

本发明是通过以下技术方案实现的,本发明首先根据待制备微构件的形状制备模具,然后利用模具在高分子聚合物基片上批量压印出高分子聚合物模具,接着高分子聚合物表面导电处理,再对表面导电的高分子聚合物模具进行微电铸,再磨平电铸后表面多余金属,最后去除高分子聚合物基片得到所需要的金属微构件。The present invention is achieved through the following technical solutions. The present invention first prepares molds according to the shape of the micro-components to be prepared, and then uses the molds to emboss high-molecular polymer molds in batches on the high-molecular polymer substrates, and then conducts electricity on the surface of the high-molecular polymers. treatment, and then perform micro-electroforming on the surface-conductive polymer mold, then smooth the excess metal on the surface after electroforming, and finally remove the polymer substrate to obtain the required metal micro-components.

以下对本发明作出进一步的限定,具体步骤如下:The present invention is further defined below, and concrete steps are as follows:

(1)根据待制备微构件的形状制备模具(1) Prepare a mold according to the shape of the micro-component to be prepared

根据待制备微构件的形状制备掩膜板,通过UV-LIGA技术制备模具,即采用在导电基底上光刻和电铸的方法制备模具。待制备微构件的模具材料可为金属、硅、聚合物、陶瓷。优选采用金属模具。所述的待制备微构件的深宽比为0.001-2,厚度5微米-1000微米。所述的制备模具的深度比待制备微构件深度大5-50微米。A mask plate is prepared according to the shape of the micro-component to be prepared, and a mold is prepared by UV-LIGA technology, that is, the mold is prepared by photolithography and electroforming on a conductive substrate. The mold material of the micro-component to be prepared can be metal, silicon, polymer, ceramics. Metal molds are preferably used. The aspect ratio of the micro-component to be prepared is 0.001-2, and the thickness is 5 microns-1000 microns. The depth of the mold for preparation is 5-50 microns larger than the depth of the micro-component to be prepared.

所述的光刻,其方法为:对硅片或玻璃片(厚度大于1毫米)进行清洗,并在180℃烘4个小时以上以去除表面水分子;硅片一面溅射2微米厚的金属钛薄膜并进行湿法氧化发黑处理;再次对其进行清洗并180℃烘4个小时;利用厚胶甩胶机在基片表面旋涂所需要厚度的SU-8胶,厚度5微米-1000微米;利用程控烘箱或者热板对SU8胶进行前烘处理,前烘65℃、时间30分钟和前烘95℃、时间20-300分钟;利用光学掩模,在SUSS MA6紫外光刻机上进行接触式曝光,曝光时间5-1000秒,曝光强度8mJ/cm2;对曝光后的SU-8胶进行后烘热处理,后烘65℃、时间30分钟和后烘95℃、时间10-90分钟;显影时间5-30分钟,得到光刻胶图形。The photolithography method is as follows: clean a silicon wafer or a glass wafer (thickness greater than 1 mm), and bake at 180° C. for more than 4 hours to remove surface water molecules; The titanium film is subjected to wet oxidation and blackening treatment; it is cleaned again and baked at 180°C for 4 hours; the SU-8 glue of the required thickness is spin-coated on the surface of the substrate with a thickness of 5 microns-1000 by using a thick glue spinner. Micron; pre-bake SU8 glue with a programmed oven or hot plate, pre-bake at 65°C for 30 minutes and pre-bake at 95°C for 20-300 minutes; use an optical mask to contact on a SUSS MA6 UV lithography machine Type exposure, the exposure time is 5-1000 seconds, and the exposure intensity is 8mJ/cm 2 ; post-baking heat treatment is performed on the exposed SU-8 glue, post-baking at 65°C for 30 minutes and post-baking at 95°C for 10-90 minutes; The developing time is 5-30 minutes to obtain photoresist patterns.

所述的电铸,其工艺条件为:①微电铸镍:电解液类型,瓦特镍镀液体系;镀液工作条件,温度50-60℃;PH值4.5-5.0;镀速0.15-1μm/min。②微电铸镍铁合金:电解液类型,硫酸盐型稀溶液;镀液工作条件,温度50-60℃,PH值4.5-5.0;镀速:0.05-0.8μm/min。The electroforming process conditions are as follows: ① micro-electroforming nickel: electrolyte type, Watt nickel plating solution system; plating solution working conditions, temperature 50-60°C; pH value 4.5-5.0; plating speed 0.15-1μm/ min. ②Micro-electroforming nickel-iron alloy: electrolyte type, sulfate type dilute solution; plating solution working conditions, temperature 50-60°C, pH value 4.5-5.0; plating speed: 0.05-0.8μm/min.

(2)利用制备的模具,采用真空模压或注塑成形技术批量复制出高分子聚合物模具。可用的高分子聚合物有聚氯乙烯(PVC)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(PC)、聚对苯二甲酸乙二醇酯(PETG)、聚二甲基硅氧烷(PDMS)。(2) Using the prepared mould, the high molecular polymer moulds are reproduced in batches by vacuum molding or injection molding technology. Available polymers are polyvinyl chloride (PVC), polystyrene (PS), polymethylmethacrylate (PMMA), polycarbonate (PC), polyethylene terephthalate (PETG) , Polydimethylsiloxane (PDMS).

所述的真空模压,其方法为:将模具固定在真空热压机上,底部放上待模压的塑料片,如PMMA、PC、PS、PVC、PETG;关闭模腔并抽真空到10-1Pa;加接触力200N;上下热板加热至所需温度,温度范围100-200℃,并等待30秒;在一定的速度下加压力1000-5000N,并保持30-60秒;降温至脱模温度30-60℃;脱模;打开模腔,取出塑料样品。The vacuum molding method is as follows: the mold is fixed on the vacuum heat press, and the plastic sheet to be molded is placed on the bottom, such as PMMA, PC, PS, PVC, PETG; the mold cavity is closed and vacuumed to 10 -1 Pa ;Add a contact force of 200N; heat the upper and lower hot plates to the required temperature, the temperature range is 100-200°C, and wait for 30 seconds; apply a pressure of 1000-5000N at a certain speed, and keep it for 30-60 seconds; cool down to the demoulding temperature 30-60°C; Demoulding; Open the cavity and take out the plastic sample.

所述的注塑成形技术,其方法为:首先将聚二甲基硅氧烷预聚体和对应的固化剂按10∶1混和搅拌,接着放入真空箱脱气30分钟,然后将聚二甲基硅氧烷浇注在模具上。放入烘箱65℃烘烤固化1小时。最后从模具上揭开聚二甲基硅氧烷,得到批量的聚二甲基硅氧烷高分子聚合物模具。Said injection molding technology, its method is: firstly polydimethylsiloxane prepolymer and corresponding curing agent are mixed and stirred according to 10:1, then put into a vacuum box for degassing for 30 minutes, and then polydimethylsiloxane base silicone is cast on the mold. Put it into an oven at 65°C and bake and solidify for 1 hour. Finally, the polydimethylsiloxane is peeled off from the mold to obtain batches of polydimethylsiloxane polymer molds.

(3)高分子聚合物表面导电处理(3) Polymer surface conductive treatment

为实现对高分子聚合物模具进行微电铸,其表面需要导电。可在制备得到的高分子聚合物上溅射金属薄膜,以形成电铸所需的导电层。In order to achieve micro-electroforming of polymer molds, the surface needs to be electrically conductive. The metal thin film can be sputtered on the prepared polymer to form the conductive layer required for electroforming.

所述的溅射,其工艺条件为:直流溅射,本底真空2*10-6mbar,直流最大功率1kW;沉积速率:20-60nm/分钟。The process conditions of the sputtering are: DC sputtering, background vacuum 2*10 -6 mbar, DC maximum power 1kW; deposition rate: 20-60nm/min.

(4)对表面导电的高分子聚合物模具进行电铸。(4) Electroforming the surface conductive high molecular polymer mold.

根据需要,金属微构件可以选择电铸镍(Ni)、铁镍(Fe-Ni)材质。According to requirements, the metal micro-components can be made of electroformed nickel (Ni) or iron-nickel (Fe-Ni).

所述的电铸,其工艺条件为:微电铸镍:电解液类型,瓦特镍镀液体系;镀液工作条件,温度50-60℃;PH值4.5-5.0;镀速0.15-1μm/min。微电铸镍铁合金:电解液类型,硫酸盐型稀溶液;镀液工作条件,温度50-60℃,PH值4.5-5.0;镀速:0.05-0.8μm/min。The process conditions of the electroforming are: micro-electroforming nickel: type of electrolyte, Watts nickel plating solution system; working conditions of the plating solution, temperature 50-60°C; pH value 4.5-5.0; plating speed 0.15-1 μm/min . Micro-electroforming nickel-iron alloy: electrolyte type, sulfate type dilute solution; plating solution working conditions, temperature 50-60°C, pH value 4.5-5.0; plating speed: 0.05-0.8μm/min.

(5)采用研磨机磨平电铸后表面多余金属并抛光。(5) Use a grinder to smooth and polish excess metal on the surface after electroforming.

根据金属微构件的要求,磨平电铸后表面多余金属达到要求尺寸。According to the requirements of metal micro-components, the excess metal on the surface after electroforming is ground to the required size.

(6)采用高分子聚合物相应的溶剂去除高分子聚合物基片,得到所需要的金属微构件。(6) Using a solvent corresponding to the polymer to remove the polymer substrate to obtain the required metal micro-component.

本发明利用模具在高分子聚合物上低成本批量压印出高分子聚合物模具,并对表面导电的高分子聚合物模具进行微电铸,而不是通过重复高成本的光刻、电铸及去胶,从而减少金属微构件在批量生产时的工艺复杂性,加快其工艺流程,解决了低成本和批量生产金属微器件的问题;本发明采用表面导电的高分子聚合物模具进行微电铸,而不是采用导电的基底进行微电铸,解决了复制后高分子聚合物微结构空隙因形成高分子聚合物残留层,使导电的基底不能完全露出,需要将残留层刻蚀掉这个问题,无须刻蚀残留层。本加工方法具有工艺简单、灵活性好、一致性好、成本低、适于大批量生产等特点。The present invention uses molds to imprint high-molecular polymer molds in batches at low cost on high-molecular polymers, and performs micro-electroforming on the surface-conductive high-molecular polymer molds, instead of repeating high-cost photolithography, electroforming and Glue removal, thereby reducing the process complexity of metal micro-components in mass production, speeding up the process flow, and solving the problems of low cost and mass production of metal micro devices; the present invention uses a surface-conductive polymer mold for micro-electroforming , instead of using a conductive substrate for micro-electroforming, it solves the problem that the residual layer of the polymer polymer can not be completely exposed due to the formation of the polymer microstructure gap after replication, so that the residual layer needs to be etched away. There is no need to etch the residual layer. The processing method has the characteristics of simple process, good flexibility, good consistency, low cost, suitable for mass production and the like.

具体实施方式Detailed ways

实施例1Example 1

制备5微米厚、直径5000微米、深宽比0.001的Ni金属圆盘Preparation of a Ni metal disc with a thickness of 5 microns, a diameter of 5000 microns, and an aspect ratio of 0.001

(1)根据待制备微构件的形状制备模具(1) Prepare a mold according to the shape of the micro-component to be prepared

根据待制备微构件的形状制备掩膜板,通过UV-LIGA技术制备模具,即采用在导电基底上光刻和电铸的方法制备模具。待制备微构件的金属镍模具。所述的制备模具的深度比待制备微构件深度大5微米。A mask plate is prepared according to the shape of the micro-component to be prepared, and a mold is prepared by UV-LIGA technology, that is, the mold is prepared by photolithography and electroforming on a conductive substrate. Metallic nickel molds for microcomponents to be fabricated. The depth of the mold for preparation is 5 microns larger than the depth of the micro-component to be prepared.

所述的光刻,其方法为:对硅片或玻璃片(厚度大于1毫米)进行清洗,并在180℃烘4个小时以上以去除表面水分子;硅片一面溅射2微米左右厚的金属钛薄膜并进行湿法氧化发黑处理;再次对其进行清洗并180℃烘4个小时;利用厚胶甩胶机在基片表面旋涂所需要厚度的SU-8胶,厚度10微米;利用程控烘箱或者热板对SU8胶进行前烘处理,前烘65℃时间30分钟和95℃时间20分钟;利用光学掩模,在SUSS MA6紫外光刻机上进行接触式曝光,曝光时间5秒,曝光强度8mJ/cm2;对曝光后的SU-8胶进行后烘热处理,后烘65℃时间30分钟和95℃时间10分钟;显影时间5分钟,得到光刻胶图形。The photolithography method is as follows: clean a silicon wafer or a glass wafer (thickness greater than 1 mm), and bake at 180° C. for more than 4 hours to remove surface water molecules; The metal titanium film is subjected to wet oxidation blackening treatment; it is cleaned again and baked at 180°C for 4 hours; the SU-8 glue of the required thickness is spin-coated on the surface of the substrate with a thickness of 10 microns using a thick glue spinner; Use a program-controlled oven or a hot plate to perform pre-baking treatment on the SU8 glue, pre-baking at 65°C for 30 minutes and 95°C for 20 minutes; use an optical mask to perform contact exposure on a SUSS MA6 ultraviolet lithography machine, and the exposure time is 5 seconds. The exposure intensity was 8mJ/cm 2 ; the exposed SU-8 glue was post-baked at 65°C for 30 minutes and 95°C for 10 minutes; the development time was 5 minutes to obtain a photoresist pattern.

所述的电铸,其工艺条件为:微电铸镍:电解液类型,瓦特镍镀液体系;镀液工作条件,温度60℃;PH值5.0;镀速1μm/min。The electroforming process conditions are as follows: micro-electroforming nickel: type of electrolyte, Watts nickel plating solution system; working conditions of the plating solution, temperature 60° C.; pH value 5.0; plating speed 1 μm/min.

(2)利用制备的模具,采用真空模压在聚甲基丙烯酸甲酯(PMMA)批量复制出高分子聚合物模具。(2) Using the prepared mold, vacuum molding is used to replicate the polymer mold in batches in polymethyl methacrylate (PMMA).

所述的真空模压,其方法为:将金属模具固定在真空热压机上,底部放上待模压的PMMA塑料片;关闭模腔并抽真空到10-1Pa;加接触力200N;上下热板加热至所需温度,温度范围160℃,并等待30秒;在一定的速度下加压力1000N,并保持30秒;降温至脱模温度40℃;脱模;打开模腔,取出塑料样品。The vacuum molding method is as follows: the metal mold is fixed on the vacuum hot press, and the PMMA plastic sheet to be molded is placed on the bottom; the mold cavity is closed and vacuumed to 10 -1 Pa; the contact force is 200N; the upper and lower heating plates Heat to the required temperature, the temperature range is 160°C, and wait for 30 seconds; apply a pressure of 1000N at a certain speed, and keep it for 30 seconds; cool down to the demoulding temperature of 40°C; demould; open the mold cavity, and take out the plastic sample.

(3)高分子聚合物表面导电处理(3) Polymer surface conductive treatment

为实现对高分子聚合物模具PMMA进行微电铸,其表面需要导电。可在制备得到的高分子聚合物上溅射金属薄膜,以形成电铸所需的导电层。In order to realize the micro-electroforming of the polymer mold PMMA, its surface needs to be conductive. The metal thin film can be sputtered on the prepared polymer to form the conductive layer required for electroforming.

所述的溅射,其工艺条件为:直流溅射,本底真空2*10-6mbar,直流最大功率1kW;沉积速率:20-60nm/分钟。溅射一层铬铜膜,形成下一步电铸所需的导电层,铬层厚800埃、铜层厚3000埃。The process conditions of the sputtering are: DC sputtering, background vacuum 2*10 -6 mbar, DC maximum power 1kW; deposition rate: 20-60nm/min. A layer of chrome-copper film is sputtered to form the conductive layer required for the next step of electroforming. The thickness of the chromium layer is 800 angstroms, and the thickness of the copper layer is 3000 angstroms.

(4)对表面导电的高分子聚合物模具进行镍电铸。(4) Nickel electroforming is performed on the surface conductive polymer mold.

所述的电铸,其工艺条件为:微电铸镍:电解液类型,瓦特镍镀液体系;镀液工作条件,温度60℃;PH值5.0;镀速1μm/min。The electroforming process conditions are as follows: micro-electroforming nickel: type of electrolyte, Watts nickel plating solution system; working conditions of the plating solution, temperature 60° C.; pH value 5.0; plating speed 1 μm/min.

(5)采用研磨机磨平电铸后表面多余金属并抛光。(5) Use a grinder to smooth and polish excess metal on the surface after electroforming.

根据金属微构件的要求,磨平电铸后表面多余金属达到要求尺寸5微米厚。According to the requirements of metal micro-components, the excess metal on the surface after grinding and electroforming reaches the required size of 5 microns thick.

(6)采用乙酸乙酯去除PMMA塑料模具,得到所需要的金属微构件。(6) Ethyl acetate is used to remove the PMMA plastic mold to obtain the required metal micro-components.

本发明减少金属微构件在批量生产时的工艺复杂性,加快其工艺流程,解决了低成本和批量生产金属微器件的问题,解决了复制后高分子聚合物微结构空隙因形成高分子聚合物残留层,使导电的基底不能完全露出,需要将残留层刻蚀掉这个问题,无须刻蚀残留层。本发明具有工艺简单、灵活性好、一致性好、成本低、适于大批量生产等特点。The invention reduces the process complexity of metal micro-components in mass production, speeds up the process flow, solves the problem of low cost and mass production of metal micro-devices, and solves the problem of high molecular polymer microstructure voids after replication due to the formation of high molecular polymers. The residual layer prevents the conductive substrate from being completely exposed, and the residual layer needs to be etched away. There is no need to etch the residual layer. The invention has the characteristics of simple process, good flexibility, good consistency, low cost, suitable for mass production and the like.

实施例2Example 2

制备500微米厚、直径500微米、深宽比1的Ni金属圆盘Preparation of Ni metal discs with a thickness of 500 microns, a diameter of 500 microns, and an aspect ratio of 1

(1)根据待制备微构件的形状制备模具(1) Prepare a mold according to the shape of the micro-component to be prepared

根据待制备微构件的形状制备掩膜板,通过UV-LIGA技术制备模具,即采用在导电基底上光刻和电铸的方法制备模具。待制备微构件的金属镍模具。所述的制备模具的深度比待制备微构件深度大30微米。A mask plate is prepared according to the shape of the micro-component to be prepared, and a mold is prepared by UV-LIGA technology, that is, the mold is prepared by photolithography and electroforming on a conductive substrate. Metallic nickel molds for microcomponents to be fabricated. The depth of the mold for preparation is 30 microns larger than the depth of the micro-component to be prepared.

所述的光刻,其方法为:对硅片或玻璃片(厚度大于1毫米)进行清洗,并在180℃烘4个小时以上以去除表面水分子;硅片一面溅射2微米左右厚的金属钛薄膜并进行湿法氧化发黑处理;再次对其进行清洗并180℃烘4个小时;利用厚胶甩胶机在基片表面旋涂所需要厚度的SU-8胶,厚度530微米;利用程控烘箱或者热板对SU8胶进行前烘处理,前烘65℃时间30分钟和95℃时间150分钟;利用光学掩模,在SUSS MA6紫外光刻机上进行接触式曝光,曝光时间450秒,曝光强度8mJ/cm2;;对曝光后的SU-8胶进行后烘热处理,后烘65℃时间30分钟和95℃时间60分钟;显影时间20分钟,得到光刻胶图形。The photolithography method is as follows: clean a silicon wafer or a glass wafer (thickness greater than 1 mm), and bake at 180° C. for more than 4 hours to remove surface water molecules; Metal titanium thin film and carry out wet oxidation blackening treatment; wash it again and bake it at 180°C for 4 hours; use a thick glue spinner to spin-coat SU-8 glue with the required thickness on the surface of the substrate, with a thickness of 530 microns; Use a program-controlled oven or a hot plate to pre-bake the SU8 glue, pre-baking at 65°C for 30 minutes and 95°C for 150 minutes; use an optical mask to perform contact exposure on a SUSS MA6 ultraviolet lithography machine, and the exposure time is 450 seconds. The exposure intensity was 8mJ/cm 2 ; post-baking was performed on the exposed SU-8 glue, and the post-baking time was 30 minutes at 65°C and 60 minutes at 95°C; the development time was 20 minutes to obtain a photoresist pattern.

所述的电铸,其工艺条件为:微电铸镍:电解液类型,瓦特镍镀液体系;镀液工作条件,温度60℃;PH值5.0;镀速1μm/min。The electroforming process conditions are as follows: micro-electroforming nickel: type of electrolyte, Watts nickel plating solution system; working conditions of the plating solution, temperature 60° C.; pH value 5.0; plating speed 1 μm/min.

(2)利用制备的模具,采用真空模压在聚甲基丙烯酸甲酯(PMMA)批量复制出高分子聚合物模具。(2) Using the prepared mold, vacuum molding is used to replicate the polymer mold in batches in polymethyl methacrylate (PMMA).

所述的真空模压,其方法为:将金属模具固定在真空热压机上,底部放上待模压的PMMA塑料片;关闭模腔并抽真空到10-1Pa;加接触力200N;上下热板加热至所需温度,温度范围160℃,并等待30秒;在一定的速度下加压力3000N,并保持30秒;降温至脱模温度40℃;脱模;打开模腔,取出塑料样品。The vacuum molding method is as follows: the metal mold is fixed on the vacuum hot press, and the PMMA plastic sheet to be molded is placed on the bottom; the mold cavity is closed and vacuumed to 10 -1 Pa; the contact force is 200N; the upper and lower heating plates Heat to the required temperature, the temperature range is 160°C, and wait for 30 seconds; apply a pressure of 3000N at a certain speed, and keep it for 30 seconds; cool down to the demoulding temperature of 40°C; demould; open the mold cavity, and take out the plastic sample.

(3)高分子聚合物表面导电处理(3) Polymer surface conductive treatment

为实现对高分子聚合物模具PMMA进行微电铸,其表面需要导电。可在制备得到的高分子聚合物上溅射金属薄膜,以形成电铸所需的导电层。In order to realize the micro-electroforming of the polymer mold PMMA, its surface needs to be conductive. The metal thin film can be sputtered on the prepared polymer to form the conductive layer required for electroforming.

所述的溅射,其工艺条件为:直流溅射,本底真空2*10-6mbar,直流最大功率1kW;沉积速率:20-60nm/分钟。溅射一层铬铜膜,形成下一步电铸所需的导电层,铬层厚800埃、铜层厚3000埃。The process conditions of the sputtering are: DC sputtering, background vacuum 2*10 -6 mbar, DC maximum power 1kW; deposition rate: 20-60nm/min. A layer of chrome-copper film is sputtered to form the conductive layer required for the next step of electroforming. The thickness of the chromium layer is 800 angstroms, and the thickness of the copper layer is 3000 angstroms.

(4)对表面导电的高分子聚合物模具进行镍电铸。(4) Nickel electroforming is performed on the surface conductive polymer mold.

所述的电铸,其工艺条件为:微电铸镍:电解液类型,瓦特镍镀液体系;镀液工作条件,温度60℃;PH值5.0;镀速1μm/min。The electroforming process conditions are as follows: micro-electroforming nickel: type of electrolyte, Watts nickel plating solution system; working conditions of the plating solution, temperature 60° C.; pH value 5.0; plating speed 1 μm/min.

(5)采用研磨机磨平电铸后表面多余金属并抛光。(5) Use a grinder to smooth and polish excess metal on the surface after electroforming.

根据金属微构件的要求,磨平电铸后表面多余金属达到要求尺寸500微米厚。According to the requirements of metal micro-components, the excess metal on the surface after grinding and electroforming reaches the required size of 500 microns thick.

(6)采用乙酸乙酯去除PMMA塑料模具,得到所需要的金属微构件。(6) Ethyl acetate is used to remove the PMMA plastic mold to obtain the required metal micro-components.

本发明减少金属微构件在批量生产时的工艺复杂性,加快其工艺流程,解决了低成本和批量生产金属微器件的问题,解决了复制后高分子聚合物微结构空隙因形成高分子聚合物残留层,使导电的基底不能完全露出,需要将残留层刻蚀掉这个问题,无须刻蚀残留层。本发明具有工艺简单、灵活性好、一致性好、成本低、适于大批量生产等特点。The invention reduces the process complexity of metal micro-components in mass production, speeds up the process flow, solves the problem of low cost and mass production of metal micro-devices, and solves the problem of high molecular polymer microstructure voids after replication due to the formation of high molecular polymers. The residual layer prevents the conductive substrate from being completely exposed, and the residual layer needs to be etched away. There is no need to etch the residual layer. The invention has the characteristics of simple process, good flexibility, good consistency, low cost, suitable for mass production and the like.

实施例3Example 3

制备1000微米厚、直径500微米、深宽比2的Ni金属圆盘Preparation of a Ni metal disc with a thickness of 1000 microns, a diameter of 500 microns, and an aspect ratio of 2

(1)根据待制备微构件的形状制备模具(1) Prepare a mold according to the shape of the micro-component to be prepared

根据待制备微构件的形状制备掩膜板,通过UV-LIGA技术制备模具,即采用在导电基底上光刻和电铸的方法制备模具。待制备微构件的金属镍模具。所述的制备模具的深度比待制备微构件深度大30微米。A mask plate is prepared according to the shape of the micro-component to be prepared, and a mold is prepared by UV-LIGA technology, that is, the mold is prepared by photolithography and electroforming on a conductive substrate. Metallic nickel molds for microcomponents to be fabricated. The depth of the mold for preparation is 30 microns larger than the depth of the micro-component to be prepared.

所述的光刻,其方法为:对硅片或玻璃片(厚度大于1毫米)进行清洗,并在180℃烘4个小时以上以去除表面水分子;硅片一面溅射2微米左右厚的金属钛薄膜并进行湿法氧化发黑处理;再次对其进行清洗并180℃烘4个小时;利用厚胶甩胶机在基片表面旋涂所需要厚度的SU-8胶,厚度1050微米;利用程控烘箱或者热板对SU8胶进行前烘处理,前烘65℃时间30分钟和95℃时间300分钟;利用光学掩模,在SUSS MA6紫外光刻机上进行接触式曝光,曝光时间1000秒,曝光强度8mJ/cm2;;对曝光后的SU-8胶进行后烘热处理,后烘65℃时间30分钟和95℃时间90分钟;显影时间30分钟,得到光刻胶图形。The photolithography method is as follows: clean a silicon wafer or a glass wafer (thickness greater than 1 mm), and bake at 180° C. for more than 4 hours to remove surface water molecules; The metal titanium film is subjected to wet oxidation and blackening treatment; it is cleaned again and baked at 180°C for 4 hours; the SU-8 glue of the required thickness is spin-coated on the surface of the substrate with a thickness of 1050 microns using a thick glue spinner; Use a program-controlled oven or a hot plate to perform pre-baking treatment on the SU8 glue, pre-baking at 65°C for 30 minutes and 95°C for 300 minutes; use an optical mask to perform contact exposure on a SUSS MA6 ultraviolet lithography machine, and the exposure time is 1000 seconds. The exposure intensity was 8mJ/cm 2 ; post-baking was performed on the exposed SU-8 glue, and the post-baking time was 30 minutes at 65°C and 90 minutes at 95°C; the development time was 30 minutes to obtain a photoresist pattern.

所述的电铸,其工艺条件为:微电铸镍:电解液类型,瓦特镍镀液体系;镀液工作条件,温度60℃;PH值5.0;镀速1μm/min。The electroforming process conditions are as follows: micro-electroforming nickel: type of electrolyte, Watts nickel plating solution system; working conditions of the plating solution, temperature 60° C.; pH value 5.0; plating speed 1 μm/min.

(2)利用制备的模具,采用真空模压在聚甲基丙烯酸甲酯(PMMA)批量复制出高分子聚合物模具。(2) Using the prepared mold, vacuum molding is used to replicate the polymer mold in batches in polymethyl methacrylate (PMMA).

所述的真空模压,其方法为:将金属模具固定在真空热压机上,底部放上待模压的PMMA塑料片;关闭模腔并抽真空到10-1Pa;加接触力200N;上下热板加热至所需温度,温度范围160℃,并等待30秒;在一定的速度下加压力5000N,并保持60秒;降温至脱模温度40℃;脱模;打开模腔,取出塑料样品。The vacuum molding method is as follows: the metal mold is fixed on the vacuum hot press, and the PMMA plastic sheet to be molded is placed on the bottom; the mold cavity is closed and vacuumed to 10 -1 Pa; the contact force is 200N; the upper and lower heating plates Heat to the required temperature, the temperature range is 160°C, and wait for 30 seconds; apply a pressure of 5000N at a certain speed, and keep it for 60 seconds; cool down to the demoulding temperature of 40°C; demould; open the mold cavity, and take out the plastic sample.

(3)高分子聚合物表面导电处理(3) Polymer surface conductive treatment

为实现对高分子聚合物模具PMMA进行微电铸,其表面需要导电。可在制备得到的高分子聚合物上溅射金属薄膜,以形成电铸所需的导电层。In order to realize the micro-electroforming of the polymer mold PMMA, its surface needs to be conductive. The metal thin film can be sputtered on the prepared polymer to form the conductive layer required for electroforming.

所述的溅射,其工艺条件为:直流溅射,本底真空2*10-6mbar,直流最大功率1kW;沉积速率:20-60nm/分钟。溅射一层铬铜膜,形成下一步电铸所需的导电层,铬层厚800埃、铜层厚3000埃。The process conditions of the sputtering are: DC sputtering, background vacuum 2*10 -6 mbar, DC maximum power 1kW; deposition rate: 20-60nm/min. A layer of chrome-copper film is sputtered to form the conductive layer required for the next step of electroforming. The thickness of the chromium layer is 800 angstroms, and the thickness of the copper layer is 3000 angstroms.

(4)对表面导电的高分子聚合物模具进行镍电铸。(4) Nickel electroforming is performed on the surface conductive polymer mold.

所述的电铸,其工艺条件为:微电铸镍:电解液类型,瓦特镍镀液体系;镀液工作条件,温度60℃;PH值5.0;镀速1μm/min。The electroforming process conditions are as follows: micro-electroforming nickel: type of electrolyte, Watts nickel plating solution system; working conditions of the plating solution, temperature 60° C.; pH value 5.0; plating speed 1 μm/min.

(5)采用研磨机磨平电铸后表面多余金属并抛光。(5) Use a grinder to smooth and polish excess metal on the surface after electroforming.

根据金属微构件的要求,磨平电铸后表面多余金属达到要求尺寸1000微米厚。According to the requirements of metal micro-components, the excess metal on the surface after grinding and electroforming reaches the required size of 1000 microns thick.

(6)采用乙酸乙酯去除PMMA塑料模具,得到所需要的金属微构件。(6) Ethyl acetate is used to remove the PMMA plastic mold to obtain the required metal micro-components.

本发明减少金属微构件在批量生产时的工艺复杂性,加快其工艺流程,解决了低成本和批量生产金属微器件的问题,解决了复制后高分子聚合物微结构空隙因形成高分子聚合物残留层,使导电的基底不能完全露出,需要将残留层刻蚀掉这个问题,无须刻蚀残留层。本发明具有工艺简单、灵活性好、一致性好、成本低、适于大批量生产等特点。The invention reduces the process complexity of metal micro-components in mass production, speeds up the process flow, solves the problem of low cost and mass production of metal micro-devices, and solves the problem of high molecular polymer microstructure voids after replication due to the formation of high molecular polymer The residual layer prevents the conductive substrate from being completely exposed, and the residual layer needs to be etched away. There is no need to etch the residual layer. The invention has the characteristics of simple process, good flexibility, good consistency, low cost, suitable for mass production and the like.

Claims (10)

1. metal micro member batch processing method, it is characterized in that, at first the shape according to little member to be prepared prepares mould, utilize mould on the high molecular polymer substrate, to impress out the high molecular polymer mould in batches then, then the high molecular polymer surface conductance is handled, high molecular polymer mould to surface conductance carries out little electroforming again, and the ordinary telegram of regrinding casting rear surface excess metal is removed the high molecular polymer substrate at last and obtained needed metal micro member.
2. metal micro member batch processing method according to claim 1, it is characterized in that, described shape according to little member to be prepared prepares mould, be meant: adopt that the method for photoetching and electroforming prepares mould on conductive substrates, the mold materials of little member to be prepared is metal, silicon, polymer, pottery, the depth-to-width ratio of little member to be prepared is 0.001-2,5 microns-1000 microns of thickness, the big 5-50 micron of depth ratio little member degree of depth to be prepared of preparation mould.
3. metal micro member batch processing method according to claim 2 is characterized in that, described photoetching, and its method is: silicon chip or the sheet glass of thickness greater than 1 millimeter cleaned, and dry by the fire more than 4 hours to remove the surface water molecule at 180 ℃; The Titanium film of silicon chip one side sputter 2 micron thickness also carries out the wet oxidation blackout and handles; Once more to its clean and 180 ℃ the baking 4 hours; Utilize the SU-8 glue of thick glue photoresist spinner, 5 microns-1000 microns of thickness at the required thickness of substrate surface spin coating; Baking is handled before utilizing program control baking oven or hot plate that SU8 glue is carried out, 65 ℃ of preceding bakings, 30 minutes time and 95 ℃ of preceding bakings, time 20-300 minute; Utilize optical mask, on SUSS MA6 ultraviolet photolithographic machine, carry out contact exposure, time for exposure 5-1000 second, exposure intensity 8mJ/cm 2SU-8 glue after the exposure is warmed processing after carrying out, 65 ℃ of back bakings, 30 minutes time and 95 ℃ of back bakings, time 10-90 minute; Developing time 5-30 minute, obtain the photoresist figure.
4. metal micro member batch processing method according to claim 2 is characterized in that, described electroforming, its process conditions are: 1. little electroformed nickel: the electrolyte type is watt nickel plating bath system, the plating bath condition of work is temperature 50-60 ℃, and pH value 4.5-5.0 plates fast 0.15-1 μ m/min; 2. little electroformed nickel ferroalloy: the electrolyte type is the sulfate type weak solution, and the plating bath condition of work is temperature 50-60 ℃, pH value 4.5-5.0, plating speed: 0.05-0.8 μ m/min.
5. metal micro member batch processing method according to claim 1, it is characterized in that, the described mould that utilizes impresses out the high molecular polymer mould in batches on the high molecular polymer substrate, its method is: adopt vacuum molding or injection molded technology batch duplicating to go out the high molecular polymer mould, high molecular polymer has polyvinyl chloride, polystyrene, polymethyl methacrylate, Merlon, PETG, dimethyl silicone polymer.
6. metal micro member batch processing method according to claim 5 is characterized in that, described vacuum molding, and its method is: mould is fixed on the vacuum hotpressing machine, and the plastic sheet for the treatment of mold pressing is put in the bottom, as PMMA, PC, PS, PVC, PETG; Close die cavity and be evacuated down to 10-1Pa; Add contact force 200N; Up and down hot plate be heated to temperature required, temperature range 100-200 ℃, and wait for 30 seconds; Plus-pressure 1000-5000N under certain speed, and keep 30-60 second; Be cooled to calcining temperature 30-60 ℃; The demoulding; Open die cavity, take out plastic sample.
7. metal micro member batch processing method according to claim 5, it is characterized in that, described injection molded technology, its method is: at first dimethyl silicone polymer performed polymer and corresponding curing agent are pressed 10: 1 mixed stirrings, then put into the vacuum tank degassing 30 minutes, then dimethyl silicone polymer is cast on the mould, put into 65 ℃ of baking-curings of baking oven 1 hour, open dimethyl silicone polymer from mould at last, obtain dimethyl silicone polymer high molecular polymer mould in batches.
8. metal micro member batch processing method according to claim 1 is characterized in that, described high molecular polymer surface conductance is handled, and is meant: sputtered metal film on the high molecular polymer for preparing, and to form the required conductive layer of electroforming.
9. metal micro member batch processing method according to claim 8 is characterized in that, described sputter, and its process conditions are: d.c. sputtering, base vacuum 2*10-6mbar, direct current peak power 1kW, sedimentation rate: 20-60nm/ minute.
10. metal micro member batch processing method according to claim 1 is characterized in that, described little electroforming, its process conditions are: 1. little electroformed nickel: the electrolyte type is watt nickel plating bath system, the plating bath condition of work is temperature 50-60 ℃, and pH value 4.5-5.0 plates fast 0.15-1 μ m/min; 2. little electroformed nickel ferroalloy: the electrolyte type is the sulfate type weak solution, plating bath condition of work, temperature 50-60 ℃, pH value 4.5-5.0, plating speed: 0.05-0.8 μ m/min.
CN 200510028219 2005-07-28 2005-07-28 Method for Batch Processing of Metal Micro Components Pending CN1736851A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108452855A (en) * 2018-04-15 2018-08-28 新羿制造科技(北京)有限公司 The processing method of micro-fluidic chip
CN108560027A (en) * 2018-04-12 2018-09-21 深圳市华熠科技有限公司 Metal sticker manufacturing method
CN112206782A (en) * 2019-07-12 2021-01-12 南京理工大学 Catalyst chip containing Ni/MnO2 composite coating and preparation method thereof
CN113372770A (en) * 2021-04-26 2021-09-10 南方科技大学 Hydrophobic composite material and preparation method and application thereof
CN117020596A (en) * 2023-08-05 2023-11-10 湖南城市学院 Production method and application of mushroom-shaped array through hole die

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108560027A (en) * 2018-04-12 2018-09-21 深圳市华熠科技有限公司 Metal sticker manufacturing method
CN108452855A (en) * 2018-04-15 2018-08-28 新羿制造科技(北京)有限公司 The processing method of micro-fluidic chip
CN108452855B (en) * 2018-04-15 2021-02-26 新羿制造科技(北京)有限公司 Method for processing micro-fluidic chip
CN112206782A (en) * 2019-07-12 2021-01-12 南京理工大学 Catalyst chip containing Ni/MnO2 composite coating and preparation method thereof
CN112206782B (en) * 2019-07-12 2023-11-14 南京理工大学 Catalyst chip containing Ni/MnO2 composite coating and preparation method thereof
CN113372770A (en) * 2021-04-26 2021-09-10 南方科技大学 Hydrophobic composite material and preparation method and application thereof
CN113372770B (en) * 2021-04-26 2022-07-29 南方科技大学 Hydrophobic composite material, preparation method and application thereof
CN117020596A (en) * 2023-08-05 2023-11-10 湖南城市学院 Production method and application of mushroom-shaped array through hole die

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