CN109116684A - Transferable bonding PDMS base nanostructure preparation method - Google Patents
Transferable bonding PDMS base nanostructure preparation method Download PDFInfo
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- CN109116684A CN109116684A CN201810808254.4A CN201810808254A CN109116684A CN 109116684 A CN109116684 A CN 109116684A CN 201810808254 A CN201810808254 A CN 201810808254A CN 109116684 A CN109116684 A CN 109116684A
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- pdms
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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Abstract
本发明公开了可转移键合PDMS基纳米结构制备方法，首先在刚性基底上旋涂一种可被有机溶剂如丙酮等溶解的牺牲层；然后在所制作的牺牲层表面旋涂一层PDMS，固化后在PDMS上面通过干涉光刻的方法制作出周期性纳米图形；再将制作好的图形进行刻蚀，得到图形化了的PDMS。将刻蚀好的PDMS放入丙酮等有机溶剂中，将牺牲层溶解，最终得到具有纳米图形的可转移可键合的PDMS薄膜。本发明使用干涉光刻的方法制备周期性纳米图形，极大的提高了效率。相较于现有的几种制备柔性材料微纳结构的方法，干涉光刻具有速度快，成本低，面积大，易于调节周期及占空比的优点。大大降低了制作过程中薄膜释放的操作难度，提高了薄膜制作的成功率，社会效益及经济效益十分显著。
The invention discloses a method for preparing a transferable bonded PDMS-based nanostructure. First, a sacrificial layer that can be dissolved by an organic solvent such as acetone is spin-coated on a rigid substrate; then a layer of PDMS is spin-coated on the surface of the prepared sacrificial layer. After curing, periodic nano-patterns are produced on PDMS by means of interference lithography; and then the produced patterns are etched to obtain patterned PDMS. The etched PDMS is put into an organic solvent such as acetone to dissolve the sacrificial layer, and finally a transferable and bondable PDMS film with nano-patterns is obtained. The invention uses the method of interference lithography to prepare periodic nano-patterns, which greatly improves the efficiency. Compared with several existing methods for preparing micro-nano structures of flexible materials, interference lithography has the advantages of high speed, low cost, large area, and easy adjustment of period and duty cycle. The operation difficulty of releasing the film during the production process is greatly reduced, the success rate of film production is improved, and the social and economic benefits are very significant.
Description
Technical field
The present invention relates to a kind of methods for making large area periodic nano-structure on a flexible substrate, specifically about one
The method that kind makes PDMS periodic nano-structure.
Background technique
PDMS (polydimethylsiloxane), i.e. dimethyl silicone polymer, based on being most widely used silicon
Organic polymer material.Solid dimethyl silicone polymer is a kind of silica gel, it is nontoxic, have hydrophobicity and waterproofness, be inertia
Substance, and be non-flammable, transparent elastomer.The preparation process of dimethyl silicone polymer is easy and quick, and material cost is far below
Silicon Wafer, and its translucency is good, biocompatibility is good, easily with various material room-temperature bonding.Just because of its with it is above-mentioned a little,
Therefore it is widely used, including micro sprue system, gap filler, lubricant, the contact lenses etc. in bio-microelectromechanical.
Currently, the method that traditional PDMS nanostructure preparation uses nano impression are as follows: configured PDMS is poured on silicon
The die surface of alkanisation processing strips down PDMS film by tearing or tweezers after solidification from mold.But this method
Silanization treatment must be used, not only complex steps, increase the complexity and cost of technique, and silylating reagent has poison
Property, when experiment, need to be paid special attention to.Since separation PDMS film must overcome Van der Waals force, hydrogen bond between PDMS film and mold
Equal adhesion strengths effect, and PDMS film thickness itself is small, mechanical strength is low, easily occurs stretching in separation process, tear, pleat
Situations such as wrinkling, causing microstructure breakage.And artificial running cost is high, time-consuming, low efficiency is it is necessary to have very high skill,
It can not carry out volume-produce.In addition, this method needs to make mold in advance, mold once preparing once can not be again
Structure is adjusted.So traditional PDMS nanostructure preparation method has significant limitation.Therefore need it is a kind of quickly,
Largely, efficiently, low cost and do not have influential film manufacturing method to nanostructure on PDMS.
Summary of the invention
It is an object of the invention to overcome the above prior art disadvantage, designs and make and is a kind of quick, a large amount of, efficient, low
Cost and do not have influential film manufacturing method to nanostructure, most achievees the purpose that separate bonding.The production method
Using interference photoetching technology and dissolution sacrificial layer technology, photoresist is prepared on PDMS by the method for interference lithography first
Then periodic nano-structure performs etching PDMS, finally dissolve sacrificial layer and realize the automatic of PDMS film and rigid basement
Separation.Avoid in traditional nano-imprinting method between PDMS film and rigid basement there are motive power and caused by it is thin
Film damage.This method has that simple process, yield are high, easy to operate, can realize quickly and in the case where not destroying PDMS film
The preparation of PDMS nanostructure meets the needs of rapid, high volume production PDMS nano structure membrane, social benefit and economic benefit
It is very significant.
To achieve the above object, the technical solution adopted by the present invention is a kind of production method of flexibility PDMS nanostructure,
It is characterized by: spin coating one kind can be by the sacrificial layer of the dissolutions such as organic solvent such as acetone first in rigid basement；Then exist
One layer of PDMS film of surface spin coating of made sacrificial layer passes through interference light on PDMS film surface after PDMS film solidification
The method at quarter makes figure；The figure made is performed etching again, the PDMS film after obtaining graphically.Finally, will etching
Good PDMS film is put into acetone and other organic solvent, and sacrificial layer is dissolved, PDMS film is obtained.
Rigid basement is ito glass.
The PDMS film have nanostructure and by rigid base foundation surface spin coating and solidifying production, PDMS film
Thickness is no more than 300 μm, and the thickness of PDMS film is changed by the solidification ratio of the revolving speed or PDMS film that change photoresist spinner.
The method of preparation nanostructure used is interference lithography, for a kind of side of quickly preparation large area periodic structure
Method.Sample is put into specimen holder, periodic grating structure is obtained by single exposure；90 ° of sample of rotation, exposes again, obtains
It is dot matrix or Kong Zhen to periodical special graph；Any rotation multiple exposure obtains periodic special graph.Pass through
The angulation change incidence angle for adjusting objective table achievees the purpose that control screen periods and duty ratio.
The PDMS film be released through sacrificial layer and PDMS film to be put into togerther organic solvent dissolution sacrificial layer real
It is existing.
Innovation of the invention is, quickly prepares large area periodic nano-structure using the method for interference lithography,
And using PDMS film can be discharged by the sacrificial layer that such as acetone and other organic solvent dissolves.Nano impression is compared using interference lithography
The methods of, without preparing seal mold, it is easy to adjust period and duty ratio；With other preparation nanostructures method, as EBL,
FIB etc. has many advantages, such as that at low cost, area is big, speed is fast, yield is high.In addition, the method for dissolution sacrificial layer release film, keeps away
During having exempted from because active force is discharged greater than membrane structure caused by film mechanical strength between PDMS film and rigid basement
Film fold, tearing, the destruction of micro-nano structure caused by the damage problem and manual operation of appearance are improper.It greatly reduces
The operation difficulty that film discharges in manufacturing process improves the success rate of film production, while rigid basement ensure that PDMS is thin
The flatness of film.
Detailed description of the invention
Fig. 1: the PDMS side view being solidificated on ito glass；
Fig. 2: the dot matrix side view of the photoresist left on PDMS-ITO glass after photoetching development；
Fig. 3: the hole system of battle formations that will be obtained after PDMS-ITO glass etching；
Fig. 4: the hole the PDMS system of battle formations that dissolution sacrificial layer obtains；
Fig. 5: the obtained hole PDMS battle array and laser are bonded；
In figure: 1, PDMS film 2, photoetching glue victim layer 3, ito glass substrate 4, the photoresist dot matrix 5, PDMS being cured
Hole battle array film 6, silicon wafer 7, laser.
Specific embodiment
Nano grade grating is prepared using the production method of novel separation PDMS film proposed by the present invention and rigid basement
PDMS film, specific embodiment is as described below:
S1 configures PDMS, 184 elastomer silicone of Sylagrd: bi-component is that 10:1 (w/w) is mixed.
Ito glass substrate (3) are placed on photoresist spinner by S2, get rid of a layer photoresist (2) as sacrificial layer, forward 1000r/
Min, after turn 1500r/min, and photoresist is dried, the photoresist of drying is made.
Configured PDMS drop on the photoresist of drying, is carried out spin coating by S3 again, and forward 1000r/min is rear to turn
2500r/min.The PDMS 2-3 hour of standing coated keeps it more smooth, is then put on 100 DEG C of hot plates, solidifies within 35 minutes
The PDMS film (1) being cured.
The PDMS film being cured (1) is produced the photoresist dot matrix (4) of Nano grade by S4 using interference lithography.
S5 is performed etching photoresist dot matrix (4) using ICP etching, obtains the hole PDMS battle array film (5).
S6 will be connected to photoetching glue victim layer (2) and the hole the PDMS battle array film (5) of ito glass substrate (3) is put into acetone
It impregnates, the separation hole PDMS battle array film (5) and rigid basement.The hole PDMS made battle array film (5) is pressed from both sides out with tweezers, nitrogen gun
Gently dry up.
The hole PDMS separated battle array film (5) is bonded by S7 with laser (7).
Claims (6)
1. transferable bonding PDMS base nanostructure preparation method, it is characterised in that: a kind of energy of spin coating first in rigid basement
Enough sacrificial layers by organic solvent such as acetone solution；Then in one layer of PDMS film of the surface spin coating of made sacrificial layer,
After PDMS film solidification, figure is made by the method for interference lithography on PDMS film surface；The figure made is carried out again
Etching, the PDMS film after obtaining graphically；Finally, the PDMS film etched is put into acetone organic solvent, will sacrifice
Layer dissolution, obtains PDMS film.
2. transferable bonding PDMS base nanostructure preparation method according to claim 1, it is characterised in that: rigid basement
For ito glass.
3. transferable bonding PDMS base nanostructure preparation method according to claim 1, it is characterised in that: the PDMS
Film have nanostructure and by rigid base foundation surface spin coating and solidifying production, PDMS film thickness no more than 300 μm,
The thickness of PDMS film is changed by the solidification ratio of the revolving speed or PDMS film that change photoresist spinner.
4. transferable bonding PDMS base nanostructure preparation method according to claim 1, it is characterised in that: by primary
Exposure obtains periodic grating structure；90 ° of sample of rotation, exposes, obtaining periodical special graph is dot matrix or Kong Zhen again；
Any rotation multiple exposure obtains periodic special graph；By adjusting the angulation change incidence angle of objective table, reach
Control the purpose of screen periods and duty ratio.
5. transferable bonding PDMS base nanostructure preparation method according to claim 1, it is characterised in that: the PDMS
Film be released through sacrificial layer and PDMS film is put into togerther organic solvent dissolution sacrificial layer to realize.
6. transferable bonding PDMS base nanostructure preparation method according to claim 1, it is characterised in that:
S1 configures PDMS, 184 elastomer silicone of Sylagrd: bi-component is that 10:1 (w/w) is mixed；
Ito glass substrate (3) are placed on photoresist spinner by S2, get rid of a layer photoresist (2) as sacrificial layer, forward 1000r/min, after
Turn 1500r/min, and photoresist is dried, the photoresist of drying is made；
Configured PDMS drop on the photoresist of drying, is carried out spin coating by S3 again, forward 1000r/min, after turn 2500r/
min；The PDMS 2-3 hour of standing coated keeps it more smooth, is then put on 100 DEG C of hot plates, is consolidated within 35 minutes
The PDMS film (1) changed；
The PDMS film being cured (1) is produced the photoresist dot matrix (4) of Nano grade by S4 using interference lithography；
S5 is performed etching photoresist dot matrix (4) using ICP etching, obtains the hole PDMS battle array film (5)；
The hole the PDMS battle array film (5) that S6 will be connected to photoetching glue victim layer (2) and ito glass substrate (3), which is put into acetone, to be impregnated,
Separate the hole PDMS battle array film (5) and rigid basement；The hole PDMS made battle array film (5) is pressed from both sides out with tweezers, nitrogen gun is gently
Drying；
The hole PDMS separated battle array film (5) is bonded by S7 with laser (7).
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| CN201810808254.4A CN109116684A (en) | 2018-07-22 | 2018-07-22 | Transferable bonding PDMS base nanostructure preparation method |
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Cited By (5)
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| CN111025445A (en) * | 2019-12-10 | 2020-04-17 | 深圳先进技术研究院 | Method and device for manufacturing flexible grating based on PDMS |
| CN111562638A (en) * | 2020-05-25 | 2020-08-21 | 苏州大学 | Reflection-type heat insulation film and preparation method thereof |
| CN112010259A (en) * | 2019-05-31 | 2020-12-01 | 中国科学技术大学 | A method for transferring porous PDMS films in organ-on-a-chip |
| CN113786870A (en) * | 2021-09-13 | 2021-12-14 | 大连理工大学 | A method for manufacturing a flexible base with microstructure protrusions for thin film chip bonding |
| CN115108733A (en) * | 2022-07-04 | 2022-09-27 | 桂林电子科技大学 | Method for patterning all-inorganic perovskite microcrystal composite film |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113786870B (en) * | 2021-09-13 | 2022-05-27 | 大连理工大学 | A method for manufacturing a flexible base with microstructure protrusions for thin film chip bonding |
| CN115108733A (en) * | 2022-07-04 | 2022-09-27 | 桂林电子科技大学 | Method for patterning all-inorganic perovskite microcrystal composite film |
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