CN1702880A - Semiconductive light-emitting diode (LED) through-hole flip chips and manufacturing technique thereof - Google Patents

Abstract

The invention discloses a novel high-reliability LED through-hole upside-down welding chip and a low-cost process method. The structure of the LED through-hole flip-welded chip is as follows: each side of the insulating support substrate chip is laminated with two electrodes, and the two electrodes on the same side are electrically insulated from each other. The two electrodes on the first surface of the supporting substrate chip are respectively electrically connected to the two electrodes on the second surface through via holes/metal filling plugs. The positions and shapes of the two electrodes on the first surface match the positions and shapes of the two electrodes of the LED chips bonded thereon. When packaging the LED through-hole reverse welding chip, no gold wire is required, which has high reliability and reduces the thickness of the packaging tube base. The invention also discloses different processes for manufacturing LED through-hole flip-bonded chips.

Description

Semiconductor Light-Emitting Diode (LED) Through Hole Upside-Down Chip Welding and Production Technology

technical field

The invention discloses a novel high-reliability semiconductor light-emitting diode (LED) through-hole flip-bonded chip and a low-cost production technology and process, belonging to the technical field of semiconductor electronics.

Background technique

High-power semiconductor light-emitting diodes have great prospects to replace incandescent lamps. However, technical and production problems must be solved first. The main problems include the low heat dissipation efficiency of gallium nitride-based LEDs with sapphire as the growth substrate. For this reason, a gallium nitride-based LED flip-bonding chip is proposed, as shown in Figure 1: a gallium nitride-based LED chip 104 is flip-bonded on a silicon support substrate chip 110, and two bonding wires on the silicon support substrate chip 110 The pads 108 and 109 are used to connect the gold wires 111 and 112 to external power sources during packaging. However, gold wires can cause reliability problems. In addition, the automatic wire bonding equipment is expensive, the output of manual wire bonding equipment is low, and the space occupied by the gold wire increases the thickness of the package socket of the LED flip-chip soldering chip.

Therefore, there is a need for a new type of LED through-hole flip-welding chip and low-cost production technology and process. When the chip is packaged, gold wires do not need to be punched, it has high reliability, and the thickness of the package base is reduced. The production process thus obtained can be applied to other semiconductor through-hole flip-bonding chips.

Contents of the invention

The invention discloses several novel high-reliability LED through-hole upside-down soldered chips with different structures and a low-cost process method. The structure of LED through-hole upside-down welding chips is as follows: two electrodes are stacked on each side of the insulating support substrate, and the two electrodes on the same side are electrically insulated from each other, and the two electrodes on the first side are filled with through holes/metal The plugs are respectively electrically connected to the two electrodes on the second face. The position and shape of the two electrodes on the first surface match the position and shape of the two electrodes of the LED chip bonded on it, and the position and shape of the two electrodes on the second surface match the heat to be bonded during packaging. The position and shape of the two electrodes on the sink match. The invention also discloses several different processes for manufacturing LED through-hole flip-bonded chips.

One of the steps of the process is as follows: a patterned conductive metal layer is laminated on both sides of the silicon support substrate wafer, and the material of the metal layer is selected from a group of materials, which includes, but is not limited to: aluminum, copper, gold , silver, tin, etc., their alloys, and their combinations. Alloys include, but are not limited to: gold tin, silver tin, aluminum copper, etc. On the metal layer on the first side of the silicon support substrate wafer, a group of electrodes is formed at a predetermined position, and each group of electrodes includes two electrodes: a first electrode and a second electrode, the positions of the two electrodes and The shape is matched with the position and shape of the P electrode and the N electrode of the LED chips subsequently laminated thereon. On the metal layer on the second side of the silicon support substrate wafer, a group of electrodes are formed at predetermined positions, and each group of electrodes includes two electrodes: the third electrode and the fourth electrode, the positions of the two electrodes and The shapes match respectively the positions and shapes of the two electrodes of the heat sink subsequently laminated thereon. The positions of the third and fourth electrodes on the second side of the support substrate wafer are matched with the positions of the first and second electrodes on the first side of the support substrate wafer, respectively. A through hole (through hole) is formed on a predetermined position of the silicon support substrate wafer, and a conductive metal filling plug is stacked in the through hole, and the conductive metal filling plug connects the electrodes at both ends of the through hole, that is, the first electrode and the third electrode. The electrodes are connected, the second electrode and the fourth electrode are connected, therefore, the first electrode and the third electrode are electrically connected, and the second electrode and the fourth electrode are electrically connected. Then, the LED chip is flip-bonded to a predetermined position on the metal layer on the first surface of the silicon support substrate wafer, so that the P electrode and the N electrode of the LED chip are respectively bonded to the first electrode and the second electrode. The silicon supporting substrate wafer is cut into small pieces of silicon supporting substrate chips, so that each silicon supporting substrate chip includes an LED chip which is upside-down welded thereon, forming an LED through-hole upside-down welding chip. The small silicon support substrate chip can have the same size and shape as the LED chip, or it can be larger than the LED chip and have a different shape. The number of vias/metal plugs connecting a pair of electrodes on both sides of the supporting substrate chip can be one or more. For example, in FIG. 4 , there are two vias/metal plugs connecting electrodes 410 and 413 . The cross-sectional area of each via/metal-fill plug can be small or large, for example, on the order of square micrometers to square millimeters. The advantages of using multiple through holes/metal filling plugs with large cross-sectional areas to connect a pair of electrodes on both sides of the supporting substrate chip are: (1) further improve the thermal conductivity of the supporting substrate chip; (2) reduce the resistance, thereby reducing The heat generated reduces the voltage.

The technology and production method of LED through-hole flip-bonding chips disclosed by the invention can be applied to other semiconductor through-hole flip-bonding chips.

The purpose of the present invention and the various effects that can be achieved are as follows:

(1) The object of the present invention is to provide LED through-hole upside-down soldering chips.

(2) The object of the present invention is to provide a low-cost mass production method for LED through-hole flip-bonding chips with high reliability.

(3) The LED through-hole inverted chip provided by the present invention does not need to be bonded with gold wires when it is packaged.

(4) The LED through-hole flip-bonded chip provided by the present invention has high reliability.

(5) The package height of the LED through-hole flip-bonded chip provided by the present invention is reduced.

The present invention and its features and benefits will be better demonstrated in the following detailed description.

Description of drawings

Figure 1 shows a previous high-power LED flip-bond chip with wire bonding pads.

FIG. 2 shows a specific implementation example of the previous high-power LED flip-bonding chip packaging.

Fig. 3 is the first specific implementation example of the high-power LED through-hole flip-bonded chip of the present invention.

Fig. 4 is a second specific implementation example of the high-power LED through-hole flip-bonded chip of the present invention.

Fig. 5 is a first specific implementation example of the packaging of high-power LED through-hole flip-bonded chips of the present invention.

Fig. 6 is a second specific implementation example of the packaging of high-power LED through-hole flip-bonded chips of the present invention.

Fig. 7a is the first specific implementation example of the low-cost mass production process of high-power LED through-hole flip-bonding chips of the present invention.

Fig. 7b is a specific implementation example of a silicon support substrate wafer with vias/metal filling plugs and electrodes manufactured by the process of Fig. 7a according to the present invention.

Fig. 7c is a cross-sectional view of a specific implementation example of a bonded LED wafer manufactured by the process of Fig. 7a of the present invention.

Fig. 8a is a second specific implementation example of the low-cost mass production process of high-power LED through-hole flip-bonding chips of the present invention.

Fig. 8b is a cross-sectional view of a specific implementation example of a silicon support substrate wafer bonded with LED chips manufactured by the process of Fig. 8a of the present invention.

Fig. 8c is a top view of a first embodiment of a silicon support substrate wafer bonded with LED chips manufactured by the process of Fig. 8a of the present invention.

Fig. 8d is a top view of a second embodiment of a silicon support substrate wafer bonded with LED chips manufactured by the process of Fig. 8a of the present invention.

Detailed Description of Specific Implementation Examples and Invention

Although the specific implementation examples of the present invention will be described below, the following descriptions are only to illustrate the principles of the present invention, rather than limiting the present invention to the descriptions of the following specific implementation examples.

Note the following:

(1) The production technology and process of high-power LED through-hole flip-bonding chips shown in Fig. 7 and Fig. 8 can be applied to the production of other through-hole flip-bonding chips.

(2) Materials for the support substrate of the present invention include, but are not limited to, silicon wafers, aluminum nitride ceramic sheets, and the like.

(3) The process of stacking metal on both sides of a silicon wafer and electrically connecting the metal layers on both sides with vias/metal filling plugs is called metallization. Metallization is a well-established process in the semiconductor IC industry:

(a) the material of the metal layer laminated on both sides of the silicon support substrate wafer is selected from a group of materials including, but not limited to: copper, gold, silver, tin, aluminum, their alloys, and their combination. Alloys include, but are not limited to: gold tin, silver tin, aluminum copper, etc.

(b) Methods of laminating metal layers on both sides of a silicon support substrate wafer include, but are not limited to: physical vapor deposition (PVD) (including evaporation deposition, electron beam deposition, sputter deposition (including, radio frequency deposition) , Magnetron, IMP)), metal chemical vapor deposition (CVD), copper plating, etc.

(c) The copper deposited on the silicon support substrate wafer will diffuse into the silicon wafer. This phenomenon has no effect on the semiconductor light-emitting diode (LED), but makes the combination of copper and silicon more reliable.

(d) To form electrodes on a copper layer deposited on a silicon support substrate wafer, a damascene process may be used.

(e) The through holes can be manufactured by the following methods: wet etching, dry etching, and laser drilling.

(f) The material of the metal filling plug is selected from a group of materials including, but not limited to: tungsten, aluminum, copper, gold, etc.

(4) Laminating metal on both sides of an aluminum nitride ceramic sheet is a very mature process in the semiconductor industry.

(5) Methods for bonding LED chips on a support substrate wafer include, but are not limited to: eutectic bonding, gold stud bumping, etc.

(6) The method of bonding the supporting substrate wafer and the high-power LED epitaxial wafer includes, but is not limited to: wafer bonding (wafer bonding), gold ball bonding, etc.

(7) The number of vias/metal filling plugs connecting a pair of electrodes on both sides of the support substrate chip can be one or more. For example, in FIG. 4, the via holes/metal filling plugs connecting electrodes 410 and 413 have two. The cross-sectional area of each via/metal-fill plug can be small or large, for example, on the order of square micrometers to square millimeters.

Figure 1 shows a previous high-power blue LED flip-bond chip with wire bonding pads. The LED flip chip 100 includes an LED chip 104 and a silicon support substrate chip 110 . The electrodes 101 and 106 of the LED chip 104 are respectively connected to the electrodes 103 and 107 on the silicon support substrate chip 110 through the bonding pads 102 and 105 . Bonding pads 102 and 105 include, but are not limited to: eutectic bonding, gold ball bonding, and the like. Electrodes 103 and 107 are electrically insulated from each other and have wire bonding pads 108 and 109 respectively at the ends. The gold wires 111 and 112 are respectively connected to the wire bonding pads 108 and 109 .

Figure 2 shows the previous high-power blue LED flip-chip package. An LED flip-bond die bonded on the heat sink 204 including the LED chip 204 and the silicon wafer support substrate chip 210 . The bonding pads 203 and 205 on the heat sink 204 are respectively connected to the bonding pads 206 and 207 of the LED flip-bonded chips through gold wires 201 and 202 . The gold wire will cause reliability problems, and the height of the gold wire increases the height of the packaging tube seat of the LED flip-chip soldering chip.

Fig. 3 shows the first specific implementation example of the LED through-hole flip-bonded chip of the present invention. The same structure can be applied to other semiconductor through-hole flip-bonded chips.

The LED through-hole flip chip 300 includes an LED chip 301 and a silicon support substrate chip 307 . The LED chip 301 includes a first electrode 302 and a second electrode 304 . The silicon support substrate chip 307 includes a first electrode 308 , a second electrode 306 , a third electrode 310 , and a fourth electrode 311 . Wherein, the first electrode 308 and the third electrode 310 of the silicon support substrate chip 307 are connected by a via/metal filling plug 309 , and the second electrode 306 and the fourth electrode 311 are connected by a via/metal filling plug 312 . The first electrode 302 and the second electrode 304 of the LED chip 301 are respectively connected to the first electrode 308 and the second electrode 306 on the silicon support substrate chip 307 through the bonding pads 303 and 305 . Therefore, the first electrode 302 and the second electrode 304 of the LED chip 301 are electrically connected to the third electrode 310 and the fourth electrode 311 of the silicon support substrate chip 307, respectively.

Fig. 4 shows a second specific implementation example of the LED through-hole flip-bonded chip of the present invention. The same structure can be applied to other semiconductor through-hole flip-bonded chips. The difference between the LED through-hole upside-down soldering chip 400 and the LED through-hole upside-down soldering chip 300 is as follows. The silicon support substrate chip 407 is larger in size than the LED chip 401 . In addition, the shape of the silicon support substrate chip 407 may be the same as or different from that of the LED chip 401 .

The number of vias/metal filling plugs connecting a pair of electrodes on both sides of the supporting substrate chip can be one or more, for example, there are two vias/metal filling plugs connecting electrodes 410 and 413 . The cross-sectional area of the via/metal-fill plug can be small or large, for example, on the order of square micrometers to square millimeters. The advantages of using multiple through holes/metal filling plugs with large cross-sectional areas to connect a pair of electrodes on both sides of the supporting substrate chip are: (1) further improve the thermal conductivity of the supporting substrate chip; (2) reduce the resistance, thereby reducing The heat generated reduces the voltage.

Note that the material supporting the substrate chip is selected from a group of materials including, but not limited to, silicon wafers, aluminum nitride ceramic sheets, and the like. The shape of the silicon support substrate chip 407 is selected from a group of shapes including, but not limited to, circular, polygonal, and the like. Polygons include, but are not limited to, quadrilaterals, hexagons, octagons, and the like.

FIG. 5 shows a specific implementation example of the packaging of the LED through-hole flip-bonded chip 300 of the present invention. The third electrode 310 and the fourth electrode 311 of the LED through-hole flip-bonded chip 300 are respectively bonded to the first electrode 502 and the second electrode 503 of the heat sink 501 . The first electrode 502 and the second electrode 503 are electrically insulated from each other. The terminals 504 and 505 of the first electrode 502 and the second electrode 503 will be respectively connected to two poles of the external power supply.

Note that the shape of the heat sink 501 is selected from a group of shapes including, but not limited to, circles, polygons, and the like. Polygons include, but are not limited to, quadrilaterals, hexagons, octagons, and the like. Bonding methods include, but are not limited to: eutectic bonding, gold ball bonding, etc. The distance between the first electrode 502 and the second electrode 503 can be as small as tens of micrometers, therefore, the bonding area is increased, the bonding strength is increased, and the thermal conductivity is further improved.

FIG. 6 shows a specific implementation example of the packaging of the LED through-hole flip-bonded chip 400 of the present invention. The third electrode 410 and the fourth electrode 411 of the LED through-hole flip solder chip 400 are respectively bonded to the first electrode 602 and the second electrode 603 of the heat sink 601 . The first electrode 602 and the second electrode 603 are electrically insulated from each other. The terminals 604 and 605 of the first electrode 602 and the second electrode 603 will be respectively connected to two poles of the external power supply. The shape of the heat sink 601 is selected from a group of shapes including, but not limited to, circles, polygons, irregular shapes, and the like. Polygons include, but are not limited to, quadrilaterals, hexagons, octagons, and the like.

Note that when the packaged high-power LED is flipped and soldered to the heat sink, multiple gold wires need to be punched. Different from it, when the LED through-hole flip-bonding chip of the present invention is packaged on the heat sink, no gold wire is needed. Therefore, the reliability is improved, the packaging structure and process are simplified, and the height of the packaging structure is reduced.

FIG. 7a shows a specific implementation example of the process of manufacturing the LED through-hole flip-bonded chip 300 of FIG. 3 of the present invention.

Process step 701: Manufacture two electrodes on the first surface of the silicon support substrate wafer at positions corresponding to the two electrodes of each LED chip on the LED epitaxial wafer, each electrode is supported by a via hole/metal filling plug and silicon Corresponding electrodes on the second face of the substrate wafer are connected to form one electrode.

The material of the metal layer laminated on both sides of the silicon support substrate wafer is selected from a group of materials including, but not limited to: copper, gold, silver, tin, aluminum, alloys thereof, and combinations thereof . Alloys include, but are not limited to: gold tin, silver tin, aluminum copper, etc. Methods of laminating metal layers on both sides of a silicon support substrate wafer include, but are not limited to: physical vapor deposition (PVD) (including evaporative deposition, electron beam deposition, sputter deposition (including, radio frequency, magnetron , IMP)), metal chemical vapor deposition (CVD), copper plating, etc.

The copper deposited on the silicon support substrate wafer will diffuse into the silicon wafer. This phenomenon is to be avoided in the semiconductor IC industry. However, this phenomenon has no effect on the semiconductor light-emitting diode (LED), but makes The combination of copper and silicon is more reliable. For forming the electrodes on the copper layer of the silicon support substrate wafer, the well-established damascene process can be used.

Depositing aluminum on silicon support substrate wafers is a well-established process, and aluminum is easily deposited on silicon support substrate wafers. Wet or dry etching of an aluminum layer on a silicon support substrate wafer to form electrodes is a well-established process.

Vias can be fabricated by the following methods: wet etching, dry etching, laser drilling. The material of the metal filling plug is selected from a group of materials including, but not limited to: tungsten, aluminum, copper, gold, and the like.

The number of vias/metal filling plugs connecting a pair of electrodes on both sides of the supporting substrate chip may be one or more. The cross-sectional area of the via/metal-fill plug can be small or large.

In the semiconductor IC industry, a metal film is laminated on both sides of an insulating medium, electrodes are fabricated on the metal film, and the corresponding electrodes on both sides are connected through conductive vias/metal filling plugs. This process is called metallization. Metallization is a well-established process and is easily applied in the semiconductor LED industry.

Process step 702: bonding the LED epitaxial wafer and the silicon support substrate wafer to form a bonded LED wafer. Methods for bonding silicon support substrate wafers and high-power LED epitaxial wafers include, but are not limited to: wafer bonding, gold ball bonding, etc.

Process step 703: cutting the bonded LED wafer into individual LED through-hole flip-bonded chips.

Note that the material of the support substrate wafer is selected from a group of materials including, but not limited to, silicon wafers, aluminum nitride ceramic wafers, and the like. The supporting substrate chip is the same size and shape as the LED chip

Figure 7b shows a cross-sectional view of the metallization of the supporting substrate wafer. The first electrode 711 and the second electrode 712 are deposited on the first face of the supporting substrate wafer 710, the third electrode 714 and the fourth electrode 716 are deposited on the second face of the supporting substrate wafer 710, and the first electrode 711 The second electrode 712 and the fourth electrode 716 are electrically connected by a via/metal plug 715 to the third electrode 714 . The shapes and positions of the first electrode 711 and the second electrode 712 correspond to the two electrodes of the LED chip stacked thereon. The shapes and positions of the third electrode 714 and the fourth electrode 716 correspond to the two electrodes of the heat sink to be bonded to when packaged.

Figure 7c shows a cross-sectional view of a bonded LED wafer. LED Epitaxial Wafer 720 and Supporting Substrate Wafer 727

via keypad

Bonding becomes a bonded LED chip. For example, there are about 1,800 1 mm x 1 mm high-power LED chips on a 2-inch LED epitaxial wafer, with a total of about 3,600 bonding pads. FIG. 7c shows that the first electrode 723 and the second electrode 725 of the LED2 chip are bonded to the first electrode 728 and the second electrode 733 of the support substrate wafer 727 via bonding pads 724 and 726 . The first electrode 728 and the second electrode 733 of the support substrate wafer 727 are electrically connected to the third electrode 730 and the fourth electrode 731 through vias/metal fill plugs 729 and 732, respectively. Each LED chip on the LED epitaxial wafer is bonded to the electrode on the corresponding support substrate wafer by the same method.

Finally, the bonded LED wafer is diced along the dicing line 721 into individual LED through-hole flip-bonded chips 300 as shown in FIG. 3 .

FIG. 8 shows a specific implementation example of the process of manufacturing the LED through-hole flip-bonded chip 400 shown in FIG. 4 of the present invention.

Process step 801: basically the same as process step 701. Figure 8b shows that two electrodes 815 and 820 are formed on the first side of the silicon support substrate wafer at the positions corresponding to the two electrodes of each LED chip, and will be bonded to the second side of the silicon support substrate wafer during packaging. Two electrodes 817 and 818 are formed at positions corresponding to the two electrodes of the combined heat sink. Two electrodes 815 and 820 on the first side of the silicon support substrate wafer are connected by vias/metal fill plugs 816 and 819 respectively to corresponding electrodes 817 and 818 on the second side of the silicon support substrate wafer.

The difference from process step 701 is that the silicon support substrate chips 823 and 833 are larger in size than the LED chip 811 . The shape of the silicon support substrate chips 823 and 833 may be the same as that of the LED chip 811 or may be different.

Process step 802 : respectively bonding each LED chip to a predetermined position on the first surface of the silicon support substrate wafer to form a bonded LED wafer 810 . Bonding methods include, but are not limited to, eutectic bonding, gold ball bonding, and the like.

Fig. 8b shows a cross-sectional view of two electrodes 812 and 813 of an LED chip 811 bonded to electrodes 815 and 820 on the first side of the silicon support substrate chip via bonding pads 814 and 821 respectively. Bonding pad materials include, but are not limited to, eutectic solder layers, gold balls, and the like.

Process step 803: dicing the bonded LED wafers 810 (FIG. 8b), 850 (FIG. 8c) and 860 (FIG. 8d) along the dicing line 822 into individual LED through-hole flip-bonded chips 400 as shown in FIG. 4 .

Fig. 8c shows a top view of a plurality of LED chips 811 bonded to corresponding silicon support substrate chips 823 on the bonded LED wafer 850, the silicon support substrate chips 823 are quadrangular. One LED chip 811 is bonded to each silicon support substrate chip 823 . Then, the bonded LED wafer 850 is diced along the dicing line 822 into individual LED through-hole flip-bonded chips 400 as shown in FIG. 4 . Cutting methods include, but are not limited to, mechanical methods, laser cutting. All dashed lines in FIG. 8c are cutting lines 822 .

Fig. 8d shows a top view of a plurality of LED chips 811 bonded to corresponding silicon support substrate chips 833 on a bonded LED wafer 860, the silicon support substrate chips 833 being octagonal. One LED chip 811 is bonded to each silicon support substrate chip 833 . Then, the bonded LED wafer 860 is diced along the dicing line 822 into individual LED through-hole flip-bonded chips 400 as shown in FIG. 4 . All dashed lines in FIG. 8d are cutting lines 822 .

Note that while the silicon support substrate chips 823 and 833 shown in FIGS. 8c and 8d are quadrangular and octagonal in shape, respectively, the shape of the silicon support substrate chip 823 is selected from a group of shapes comprising, But not limited to, circles, polygons, etc. Polygons include, but are not limited to, quadrilaterals, hexagons, octagons, and the like. In the silicon support substrate chips 823 and 833 shown in FIGS. 8c and 8d , the electrodes on the silicon support substrate chips 823 and 833 are not shown. Figures 8c and 8d only show part of the LED chip and the supporting substrate chip.

The above specific description does not limit the scope of the present invention, but only provides some specific illustrations of the present invention. Accordingly, the scope of the present invention should be determined by the claims and their legal equivalents, rather than by the above detailed description and implementation examples.

Claims (10)

1. A semiconductor light-emitting diode (LED) through-hole flip welding chip, comprising: LED chip; wherein, the two electrodes of the LED chip are on the same surface; A supporting substrate chip; wherein, the first surface of the supporting substrate chip has first and second electrodes, and the first and second electrodes are electrically insulated from each other; wherein, the supporting substrate chip There are third and fourth electrodes on the second surface, and the third and fourth electrodes are electrically insulated from each other; wherein, the first and second electrodes on the first surface of the support substrate chip respectively pass through through holes / The metal filling plug is electrically connected to the third and fourth electrodes on the second surface; wherein, the positions and shapes of the first and second electrodes on the first surface of the support substrate chip are the same as those of the LED chip The positions and shapes of the two electrodes match each other; wherein, the first and second electrodes on the first surface of the support substrate chip are respectively bonded to the two electrodes of the LED chip. 2. The LED through-hole upside-down soldering chip according to claim 1, wherein the material of the supporting substrate chip is selected from a group of materials, and the group of materials includes, but is not limited to, silicon wafers, aluminum nitride ceramics slice, etc. 3. The LED through-hole flip-bonded chip according to claim 1, wherein the size and shape of the supporting substrate chip are the same as those of the LED chip. 4. The LED through-hole upside-down soldering chip according to claim 1, wherein the size of the supporting substrate chip is larger than that of the LED chip; wherein the shape of the supporting substrate chip is the same as that of the LED chip. 5. The LED through-hole upside-down soldering chip according to claim 4, wherein the size of the supporting substrate chip is larger than the size of the LED chip; wherein, the shape of the supporting substrate chip is selected from a group of shapes , the group of shapes includes, but not limited to, circles, polygons, etc.; wherein, the polygons include, but not limited to, quadrilaterals, hexagons, octagons, etc. 6. The LED through-hole upside-down soldering chip according to claim 1, wherein the materials of the first and second electrodes on the first face of the support substrate chip and the third and fourth electrodes on the second face are Selected from a group of materials, this group of materials includes, but not limited to: aluminum, copper, gold, silver, tin, etc., their alloys, and their combinations; wherein, said alloys include, but not limited to: Gold tin, silver tin, aluminum copper, etc. 7. The LED through-hole upside-down soldering chip of claim 1, wherein the material of the through-hole/metal filling plug is selected from a group of materials including, but not limited to: tungsten, aluminum, copper , Jin, et al. 8. The LED through-hole upside-down soldering chip according to claim 1, wherein the number of said through-holes/metal filling plugs connecting the corresponding two electrodes on both sides of the supporting substrate chip can be one or more; wherein , The cross-sectional area of the via hole/metal filling plug has the order of square micron to square millimeter. 9. A process for manufacturing LED through-hole flip-bonded chips, comprising: Form two electrodes on the first side of the support substrate wafer at positions corresponding to the two electrodes of each LED chip on the LED epitaxial wafer; bond to it on the second side of the support substrate wafer when packaging Two electrodes are formed on the positions corresponding to the two electrodes on the heat sink above; wherein, the electrodes on the first surface of the support substrate wafer are respectively composed of through holes/metal filling plugs and the second surface of the support substrate wafer. The corresponding electrode connection on the surface; Bonding the LED epitaxial wafer and the support substrate wafer to form a bonded LED wafer; wherein, the two electrodes of each LED chip on the LED epitaxial wafer are connected to the first surface of the support substrate wafer The two electrodes on the corresponding position on the above are bonded; wherein, the method for bonding the LED epitaxial wafer and the support substrate wafer includes, but not limited to, wafer bonding, gold ball bonding, etc.; cutting The bonding LED chip is a single LED through-hole flip-bonded chip; wherein, the size and shape of the supporting substrate chip are the same as that of the LED chip. 10. A process for manufacturing LED through-hole flip-bonded chips, comprising: Form the first and second electrodes on the first face of the support substrate wafer at positions corresponding to the two electrodes of each LED chip; The third and fourth electrodes are formed at the positions corresponding to the two electrodes on the heat sink; wherein, the first and second electrodes on the first surface of the support substrate wafer are respectively filled with through holes/metal The plug is connected to the corresponding third and fourth electrodes on the second surface of the support substrate wafer; Respectively bond each LED chip to a predetermined position on the first surface of the support substrate wafer, so that the two electrodes of each LED chip are connected to the first surface of the support substrate wafer The first and second electrodes on the corresponding positions are respectively connected to form a bonded LED wafer; wherein, the method of bonding the LED chip and the support substrate wafer includes, but is not limited to, eutectic bonding , gold ball bonding, etc.; Cutting the support substrate wafer into individual LED through-hole flip-bonded chips, wherein each support substrate chip has a bonded LED chip on it.

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