CN1762050B

CN1762050B - Probe and method of manufacturing the same

Info

Publication number: CN1762050B
Application number: CN2004800070206A
Authority: CN
Inventors: 李亿基; 李廷勋
Original assignee: Phicom Corp
Current assignee: Soulbrain ENG Co Ltd
Priority date: 2003-03-17
Filing date: 2004-03-16
Publication date: 2010-08-04
Anticipated expiration: 2024-03-16
Also published as: KR100573089B1; US20060171425A1; CN1762050A; US8012331B2; KR20060021420A; TWI280371B; US20080035487A1; JP2006520460A; TW200427990A; JP4378481B2; US7285966B2; WO2004084295A1

Abstract

Disclosed herein are a probe and a method of manufacturing the same, and more particularly, a probe having a fine pitch, by which a probe card corresponding to arrangement of pads formed in a collective shape or other various shapes on a wafer is manufactured, and a method of manufacturing the same. The probe has a prescribed thickness and is formed in a flat plate shape. The probe includes: a body part bent at a middle portion thereof such that the body part is elastically tensioned or compressed when a tensile or compressive force is applied to the body part at upper and lower ends thereof; a connection portion integrally formed with a lower end of the body portion, the connection portion being fixed to a substrate; and a tip portion integrally formed with an upper end of the body portion, the tip portion contacting a pad of an element.

Description

Probe and manufacture method thereof

Technical field

The present invention relates to probe and manufacture method thereof, and relate more specifically to have the probe and the manufacture method thereof of small pitch, utilize described probe to make a kind of detecting card, it is corresponding to the setting of the pad that forms with intensive shape or other different shape on wafer.

Background technology

Usually, conductor integrated circuit device when making described device, make after the described device or obtain testing when encapsulating described device whether made under the situation corresponding to the original design of described device fully so that verify described device in the electrical characteristics in whole or in part of described device.

The equipment that is used to carry out above-mentioned test is the detecting devices with testing equipment and detecting card (probe card).The various signals of telecommunication that described detecting card is used for being electrically connected in the described testing equipment take place partly and the pad (pad) in the described conductor integrated circuit device, or the pad in part of the electrical signal detection in the described testing equipment and the described conductor integrated circuit device.

One of conventional detecting card is a pin type detecting card shown in Figure 1.Described pin type detecting card comprises that each has the needle probe of curved end (probe) 12.The main body of each needle probe 12 (body) is arranged on the assigned position of fixed part 13, and is fixedly attached to fixed part 13 by means of epoxy resin then.Fixed part 13 is attached to main circuit board 11.The other end of needle probe 12 is by means of the allocated circuit that is solder-connected to main circuit board 11.By this way, described detecting card is prepared.Elasticity of demand is so that stably be connected to pin the pad of described conductor integrated circuit device.But, when it is repeated to use, the level of described needle probe and position distortions.Therefore, the defective that described conventional needle type detecting card is had is, when using described pin type detecting card, needs the described probe of maintenance and repair.

Another kind of conventional detecting card is the vertical-type detecting card shown in Fig. 2.Upper surface at main circuit board 21 is provided with fixed head 23, and is provided with a plurality of guide plates 24 at the lower surface of main circuit board 21.Formed a plurality of through holes by main circuit board 21, fixed head 23 and guide plate 24, described through hole is arranged on the correspondence position of main circuit board 21, fixed head 23 and guide plate 24 regularly.Inserted needle probe 22 respectively by through hole.The end of the described needle probe that takes out from fixed head 23 is connected respectively to the allocated circuit of main circuit board 21 by means of welding.By this way, described detecting card is prepared.But described vertical-type detecting card is defectiveness also, promptly when it is reused, and the level distortion of described probe, and therefore lose its elasticity, as above-mentioned needle probe.In addition, another defective that described vertical-type detecting card is had is that long and adjacent one another are setting the owing to described pin is when described detecting card is used for testing the semiconductor integrated circuit of high speed operation type, cause the electricity between the adjacent needles to interact, and therefore reduce the precision of described test.

Any one of described pin type detecting card and vertical-type detecting card all has relative big size.On the other hand, along with development of technology, element to be tested become miniaturization day by day and precision.Therefore, any one defective that all has of described pin type detecting card and vertical-type detecting card is, can not appropriately test miniaturization and accurate element.In other words, but do not have all elements on the big relatively detecting card testing wafer, this is because the setting of a plurality of pads on the formed element is compact and intensive on the described wafer.As a result, need carry out several tests to a wafer.

In order to overcome the problems referred to above, invented the detecting card of compactness and miniaturization.The representative example of the detecting card of this compactness and miniaturization is Micro Spring Type detecting card and cantilever style detecting card.

Described Micro Spring Type detecting card is shown in Fig. 3 a, and described Micro Spring Type detecting card such as following manufacturing: projection (bump) 33 is formed on the substrate 32, as shown in Fig. 3 b.Line 34a by means of line binding element (wire bonder) shape of will popping one's head in is connected to projection 33.Line 34a is plated so that line 34a is thick and firm on its surface.Additional silicon wafer 35 is etched, and is plated then, to form brace summer 34b and the sharp 34c of probe.Brace summer 34b joins line 34a to so that form the spring type probe 34 with probe point 34.After forming spring type probe 34 as previously discussed, silicon wafer 35 is removed.As shown in Fig. 3 a, the substrate 32 that will have above-mentioned structure by means of additional strengthening part 36 is attached to main circuit board 31.

Described cantilever style detecting card is shown in Fig. 4 a, and described cantilever style detecting card such as following manufacturing: projection 43 is formed on the substrate 42, as shown in Fig. 4 b.On additional silicon wafer 44, form sharp 45b of probe and brace summer 45a.Subsequently, a termination of projection 43 is incorporated into the end of brace summer 45a, has the probe 45 of the sharp 45b of probe with formation.After forming described probe as previously discussed, silicon wafer 44 is removed.Shown in Fig. 4 a, the substrate 42 that will have above-mentioned structure by means of additional strengthening part 46 is attached to main circuit board 41.

By means of described Micro Spring Type detecting card and cantilever style detecting card, the test of the wafer of the integrated component of formation is able to smooth execution to having thereon.

But described probe beam and probe point flush each other (level) (34b among Fig. 3 b and 34c, 45a among Fig. 4 b and 45b) are set.When the pad on the element to be tested is more closely assembled, and when the pad on the element is provided with complexity, caused problem.For example, when the cantilever style detecting card shown in Fig. 4 a is used to test the wafer of the setting with the element 51 as shown in Fig. 5 a, cantilever style detecting card as described in need as shown in Fig. 5 b, constructing.Particularly, need all probe 61a are arranged on the cell substrate 61 (Fig. 5 b) that has corresponding to the detecting card 60 (Fig. 5 b) of the size of component size, (Fig. 5 a) so that test all pad 51a on each element.But when probe was set along the limit, it was impossible at the turning probe being set.Thereby, in this case, some probes are arranged on the adjacent cell substrate 61.Therefore, need to carry out twice or more times test to described wafer.

Under the situation that the pad on the wafer to be tested is provided with straight line, described cantilever style detecting card has the setting as shown in Fig. 6 a and 6b.Pitch P shown in Fig. 6 a is corresponding to the distance between two adjacent pads on the described wafer.Understand easily, described pitch P is greater than the width w of each probe 65.Therefore when the distance between the pad on the described wafer when popping one's head in 65 width w, can not carry out described test fast.

In conventional detecting card as previously discussed, the increase of probe number is limited.Therefore, it is impossible once testing a plurality of semiconductor devices, and this can not satisfy the semiconductor device producer's who attempts to increase testing efficiency needs.

Summary of the invention

Therefore, made the present invention in view of the above problems, and the purpose of this invention is to provide a kind of probe and manufacture method thereof with small pitch, utilize described probe to make a kind of detecting card, it is corresponding to the setting of the pad that forms with intensive shape or other different shape on wafer.

According to an aspect of the present invention, have specific thickness and can realize above and other purpose by providing a kind of with the probe that writing board shape forms, described probe comprises: main part, crooked in the middle, make when tension force or compression stress are applied to this main part with the lower end in the top this flexibly tensioning or compression of main part quilt; The coupling part integrally forms with the lower end of described main part, and described coupling part is fixed to substrate; And nose part, integrally form the pad of described nose part contact element with the upper end of described main part.

According to another aspect of the present invention, a kind of detecting card that comprises probe is provided, each described probe has specific thickness and forms with writing board shape, wherein said probe comprises: main part, crooked in the middle, make when tension force or compression stress are applied to described main part with the lower end in the top flexibly tensioning or the compression of described main part quilt; The coupling part integrally forms with the lower end of described main part, and described coupling part is fixed to substrate; And nose part, integrally form with the upper end of described main part, the pad of described nose part contact element, wherein said main part comprises: horizontal part; And first vertical portion, crooked straight up from an end of described horizontal part, described first vertical portion integrally is connected to described nose part; Second vertical portion, crooked straight down from the other end of described horizontal part, described second vertical portion integrally is connected to described coupling part, the length of the horizontal part of wherein said main part, first vertical portion and second vertical portion is changed forming the probe more than two kinds, and wherein said probe more than two kinds is regularly on the substrate attached to described detecting card.According to a further aspect of the invention, a kind of method of making probe is provided, comprise: step 1, apply sacrifice layer on the entire upper surface of silicon wafer, with photoresist (photoresist) the described sacrifice layer of surface-coated thereon, and will have the upper surface of first mask adhesion of probe shape pattern to described photoresist; Step 2 is exposed and the described photoresist that develops by means of described first mask, and removes described first mask; Step 3 is carried out metallide forming first metal film on the upper surface of described sacrifice layer, described sacrifice layer has by means of described exposure and development and fixing pattern; And step 4, remove the described sacrifice layer of described photoresist and etching to separate described first metal film from described silicon wafer.

Description of drawings

From the detailed description of carrying out below in conjunction with accompanying drawing, above and other purpose of the present invention, feature and other advantage will obtain clearer understanding, in the accompanying drawings:

Fig. 1 is the viewgraph of cross-section that the setting of conventional transducer is shown;

Fig. 2 is the viewgraph of cross-section that the setting of another kind of conventional transducer is shown;

Fig. 3 a and 3b are respectively the viewgraph of cross-section and the viewgraph of cross-section that the process of making this probe is shown that the setting of another kind of conventional transducer is shown;

Fig. 4 a and 4b are respectively the viewgraph of cross-section and the viewgraph of cross-section that the process of making this probe is shown that the setting of another conventional transducer is shown;

Fig. 5 a is the plane graph that the example of element to be tested is shown;

Fig. 5 b is the plane graph that explanation is used for the manufacturing of the conventional detecting card of element shown in the controlling chart 5a;

Fig. 6 a and 6b are respectively plane graph and the perspective views that the setting of conventional transducer is shown;

Fig. 7 a is perspective view and the bottom view that a preferred embodiment of the present invention is shown respectively;

Fig. 7 b is perspective view and the bottom view that another preferred embodiment of the present invention is shown respectively;

Fig. 7 c is perspective view and the bottom view that another preferred embodiment of the present invention is shown respectively;

Fig. 7 d is perspective view and the bottom view that another preferred embodiment of the present invention is shown respectively;

Fig. 8 is the viewgraph of cross-section of key diagram 7a to the shape of 7d;

Fig. 9 is the perspective view that another preferred embodiment of the present invention is shown;

Figure 10 is the viewgraph of cross-section of the shape of key diagram 9;

Figure 11 a and 11b are respectively perspective view and the plane graphs that setting of the present invention is shown;

Figure 12 a and 12b are respectively perspective view and the plane graphs that detecting card according to a preferred embodiment of the present invention is shown;

Figure 12 c is the front view of popping one's head in shown in Figure 12 a;

Figure 13 a is the viewgraph of cross-section of explanation according to the method for manufacturing probe of the present invention to 13g; And

Figure 14 a and 14b are the views that the shape of the mask that uses in the method for manufacturing probe according to the present invention is described respectively.

Embodiment

Pop one's head in according to the preferred embodiment of the invention at Fig. 7 a to shown in the 7d.With reference to the left side of figure 7a, probe 70 forms with the shape of twisted plate, and is made of metal.Probe 70 has main part 70b, and this main part is crooked in the middle, and when being applied to main part 70b with convenient external force, main part 70b is flexibly compressed and expands.When tension force or compression stress are applied to main part 70b with the lower end in the top, main part 70b in accepted tolerance by flexibly tensioning or compression.Probe 70 also has coupling part 70a, and the lower end of this coupling part and main part 70b integrally forms.Coupling part 70a is used for supportive body part 70b when the end of main part 70b is connected to substrate as brace summer.Probe 70 further comprises the nose part 70c that the upper end with main part 70b integrally forms.The pad of the direct contact measured examination of nose part 70c element.The bottom of the probe of seeing on the directions X in Fig. 7 a left side 70 illustrates on the right side of Fig. 7 a.From Fig. 7 a as can be seen, nose part 70c than coupling part 70a extend to the left many.This means that on the horizontal direction in Fig. 7 a left side, nose part 70c is arranged on the outermost of probe 70.Construct probe 70 reason as previously discussed and be arranged in a crossed manner by described probe, adjacent nose part can be with the intensive setting of straight line, after a while with described.

With reference to the left side of figure 7b, probe 71 comprises: main probe 72, and its shape with twisted plate forms and is made of metal; And auxiliary probe 73, it also forms and is made of metal with the shape of twisted plate.Except the shape of one end, auxiliary probe 73 is similar to master's probe 72.Auxiliary probe 73 is attached to main probe 72.Main probe 72 comprises: main part 72b, and crooked in the middle, make that main part 72b is flexibly compressed and expands when external force is applied to main part 72b; Coupling part 72a integrally forms with the end of described main part 72b, and coupling part 72a is used for supportive body part 72b when the end of main part 72b is connected to substrate as brace summer; And nose part 72c, integrally form the pad of the direct contact measured examination of nose part 72c element with the other end of main part 72b.Similarly, auxiliary probe 73 comprises: main part 73b, and crooked in the middle, make that main part 73b is flexibly compressed and expands when external force is applied to main part 73b; And coupling part 73a, integrally forming with the end of main part 73b, coupling part 73a is used for supportive body part 73b when the end of main part 73b is connected to substrate as brace summer.The bottom of the probe of seeing on the directions X in Fig. 7 b left side 71 illustrates on the right side of Fig. 7 b.From Fig. 7 b as can be seen, nose part 72c than

coupling part

72a and 73a extend to the left many.Construct probe 71 reason as previously discussed and be arranged in a crossed manner by described probe, adjacent nose part can be with the intensive setting of straight line.When described probe mutually intersects shown in Figure 11 a and when being provided with, the distance between the nose part 110c is reduced.Figure 11 b is a plane graph of simplifying the intensive setting of described probe.From Figure 11 b as can be seen, the distance between the nose part 110c, i.e. pitch P is less than the pitch (seeing Fig. 6 a and 6b) of conventional cantilever style probe.The width w1 of probe nose part is corresponding to half of the width w2 of probe body part.Therefore, might make detecting card with pitch P more half as large than the pitch of conventional cantilever style probe.

Probe 74 shown in Fig. 7 c is similar to the probe 71 shown in Fig. 7 b, except auxiliary probe 75 is arranged under the main probe 76.Auxiliary probe and

main probe

75 and 75 are attached to each other.End at main probe 76 forms nose part 76c.Therefore, the probe 74 of Fig. 7 c and probe 71 symmetries of Fig. 7 b.

Probe 77 shown in Fig. 7 d is combinations of the probe of Fig. 7 b and 7c.Particularly, probe 77 comprises: main probe 79 has the nose part 79c that forms at the one end; Reach auxiliary probe 78 and 80, be attached to the downside and the upside of main probe 79 respectively.Auxiliary probe 78 and 80 is provided for the intensity of strengthening described probe.

Fig. 8 is the viewgraph of cross-section of Fig. 7 a to probe shown in the 7d or main probe.The nose part 81c of the reference symbol d1 of Fig. 8 indication probe 81 is from the length that left end prolonged of 81 the coupling part 81a of popping one's head in, and the height of the end of the reference symbol d2 of Fig. 8 indication from coupling part 81a to nose part 81c.Under the situation that the various probes with different d1 and d2 value are provided, might make the detecting card that provides the various probes that are attached to substrate, it is corresponding to the setting of complicated or intensive pad, after a while with described.

Probe according to another preferred embodiment of the present invention is shown in Figure 9, and wherein said probe has the main part with right-angle bending.As shown in Figure 9, probe 90 comprises: main part 90b, and it makes that with right-angle bending main part 90b is flexibly compressed or expands when external force is applied to main part 90b; Coupling part 90a integrally forms with the end of main part 90b, and coupling part 90a is used for supportive body part 90b when the curved end of main part 90b is connected to substrate as brace summer; And nose part 90c, integrally form the pad of the direct contact measured examination of nose part 90c element with another curved end of described main part 90b.

As at Fig. 7 a in the above preferred embodiment as shown in the 7d, the probe 90 shown in Fig. 9 can be used as main probe and prepares, and auxiliary probe can be attached to a side of probe 90.Replacedly, two auxiliary probe can be attached to the both sides of probe 90 respectively.Detailed description and accompanying drawing thereof will not provide.

Figure 10 is the viewgraph of cross-section of the probe 90 shown in Fig. 9.The height of reference character D 1 indication of Figure 10 from the end of 91 the horizontal main part 91b of popping one's head in to the end of nose part 91c, the length of the horizontal main part 91b of reference character D 2 indication of Figure 10, and the height of reference character D 3 indications of Figure 10 from the other end of horizontal main part 91b to coupling part 91a.Part corresponding to the main part 91b of described reference character D 1, D2 and D3 is known as first vertical portion, horizontal part and second vertical portion.

Have different D1, D2 and D3 value providing, be under the situation of various probes of first vertical portion, horizontal part and second vertical portion of main part 91b, as in probe shown in Figure 8, might make provide be attached to the various probes of substrate, corresponding to the detecting card of the setting of complicated or intensive pad.When D2 increases, because the elasticity acute variation needs to increase the thickness of popping one's head in.By form the relation that obtains from experiment is shown, the design that the constant proportionate relationship of keeping between probe necessary D2 of elasticity and the probe thickness can be applicable to pop one's head in curve chart.

Figure 12 a is the view of the application of probe 90 shown in explanation Figure 90 to 12c.Figure 12 a is the fragmentary, perspective view of detecting card, and Figure 12 b is the plane graph of detecting card shown in Figure 12 a.The setting of implementing the probe on the described detecting card is provided with the pad on the wafer as shown in Fig. 5 a carries out test, as described in the background art.From above accompanying drawing as can be seen, the probe that is attached on each cell substrate 125 must be arranged in the zone of described cell substrate 125.As shown in Figure 12 a, have as the various probes of the described different D1 of reference Figure 10, D2 and D3 value attached to as described on the cell substrate.Particularly, on described cell substrate, be attached with: first probe 121, each has greater than the D1H of D1 with less than the D3L of D3; Second probe 122, each has less than the D1L of D1 with greater than the D3H of D3; And the 3rd probe 123, each has less than the D1L of D1 and respectively greater than D2H and the D3H of D2 and D3.Described first, second has and the 120 identical total heights of popping one's head in of the standard shown in Figure 12 c with the 3rd probe.Described first, second and the 3rd probe as following attached to as described on the cell substrate: one side second probe 122 along the adhering to of cell substrate 125, and first probe, 121 adjacent edges along cell substrate 125 adhere to, as shown in Figure 12 a.First probe 121 has been adhered at turning between the adjacent edge of described cell substrate.Because the height of the horizontal part of each first probe 121 less than the height of the horizontal part of each second probe 122, does not cause interference between probe.Under the situation of first probe 121 attached to the insufficient space of the corner of described cell substrate, as shown in Figure 12 a, in cell substrate 125, adhere to the 3rd probe 123 therein.Described probe attached to shown in Figure 12 b, this figure is the plane graph that adheres to that described probe is shown.Adhering to by means of laser beam is manual of described probe finished.

Describe the method that manufacturing is according to a preferred embodiment of the present invention popped one's head in referring now to Figure 13 a to 13f, described figure is the substrate viewgraph of cross-section that the key step of making described probe is shown.Probe manufacture method of the present invention is provided for the probe shown in the shop drawings 7b.

As shown in Figure 13 a, copper layer 131 is applied to the entire upper surface of silicon wafer 130, this copper layer is a sacrifice layer.Coated copper layer 131 is come with photoresist 132 in the surface thereon.First mask 133 that on the upper surface of photoresist 132, adheres to shape pattern with required probe.First mask 133 has the shape as shown in Figure 14 a.As from the amplifier section of Figure 14 a as seen, the shape of the compartment of described mask (space part) 133a is corresponding to the shape of the main probe 72 shown in Fig. 7 b.Expose and development photoresist 132 by means of first mask 133.Subsequently, remove first mask 133, as shown in Figure 13 b.Have by means of described exposure and development and carrying out metallide on the upper surface of the copper layer 131 of fixing pattern.As shown in Figure 13 c, the upper surface that is plated that grinds described copper layer has first metal film 134 of leading probe 72 (Fig. 7 b) shape with formation.

As shown in Figure 13 d, the surface applies the photoresist 132 and first metal film 134 with photoresist 135 thereon.Second mask 136 that on the upper surface of photoresist 135, adheres to shape pattern with required probe.Second mask 136 has the shape shown in Figure 14 b.As from the amplifier section of Figure 14 b as seen, the shape of the compartment 136a of described mask is corresponding to the shape of the auxiliary probe 73 shown in Fig. 7 b.Second mask 136 by means of Figure 13 d exposes and development photoresist 135.Subsequently, remove second mask 136, as shown in Figure 13 e.Have by means of described exposure and development and carrying out metallide on the upper surface of first metal film 134 of fixing pattern.As shown in Figure 13 f, grind the upper surface that is plated of described first metal film has auxiliary probe 73 (Fig. 7 b) shape with formation second metal film 137.

At last, remove the

photoresist

132 and 135 of Figure 13 f, come the described copper layer 131 of etch figures(s) 13f then by means of wet etch process, the metal film 134 of winning is separated from silicon wafer 130 with second metal film 137.As a result, made probe 140 as shown in Figure 13 s.

Can make probe by means of above-mentioned probe manufacture method according to other preferred embodiment of the present invention.The probe 70 of Fig. 7 a can obtain by only forming described first metal film 134 (Figure 13 c).The probe 74 of Fig. 7 c can implement to relate to first mask 133 then by the step of implementing to relate to second mask 136 (Figure 13 d), and (Figure 13 step a) obtains.The probe 77 of Fig. 7 d can obtain by the following: before the manufacture process of the probe 74 of Fig. 7 c is finished, further implement to relate to the step of second mask 136 (Figure 13 d) with another second metal film 137 of further formation (Figure 13 f).

Equally, can and be similar to Fig. 7 b by means of the probe 90 that comes shop drawings 9 as above-mentioned same steps as to other probe (not shown) of popping one's head in as shown in the 7d.But, in this case, need the compartment of mask to be out of shape according to the shape of probe.

Industrial usability

As conspicuous from the above description, the invention provides a kind of probe with small pitch, utilize this to pop one's head in and make a kind of detecting card, it is corresponding to the setting of the pad that forms with intensive shape or other different shapes on wafer.

Although disclose the preferred embodiments of the present invention for illustrative purposes, it will be apparent to one skilled in the art that as various modifications, interpolation and replacement in the spirit and scope of the present invention disclosed in the accompanying claims be possible.

Claims

1. A probe having a prescribed thickness and being formed in the shape of a flat plate, said probe comprising:

a body portion bent at its middle such that when tension or compression is applied to the body portion at its upper and lower ends, the body portion is elastically tensioned or compressed;

a connection portion integrally formed with a lower end of the body portion, the connection portion being fixed to a substrate; and

a pointed portion integrally formed with an upper end of said body portion, said pointed portion contacting a pad of an element;

wherein the probe further includes an auxiliary probe having a prescribed thickness and formed in a flat plate shape, wherein the auxiliary probe includes: a main body portion, which is the same as the main body portion of the probe; and a connection portion, which is the same as the connection portion of the probe, And the auxiliary probe is not provided with the same tip portion as that of the probe, the auxiliary probe is fixedly attached to one side of the probe.

2. The probe of claim 1, wherein said body portion comprises:

horizontal section;

a first vertical portion bent vertically downward from one end of the horizontal portion, the first vertical portion being integrally connected to the connecting portion; and

A second vertical portion bent vertically upward from the other end of the horizontal portion, the second vertical portion being integrally connected to the pointed portion.

3. The probe according to claim 1 or 2, wherein the tip portion is formed such that an end portion of the tip portion contacting the element pad is disposed at the outermost side of the probe in a horizontal direction.

4. The probe of claim 1 or 2, wherein the auxiliary probe is further fixedly attached to the other side of the probe.

5. A probe card comprising probes each having a prescribed thickness and formed in a flat plate shape,

Wherein said probe comprises: a main body portion bent at its middle so that when tension or compression force is applied to said main body portion at its upper and lower ends, said main body portion is elastically tensioned or compressed; a lower end of the body portion integrally formed, the connection portion being fixed to the base plate of the probe card; and a tip portion integrally formed with the upper end of the body portion, the tip portion contacting a pad of an element,

Wherein the main body portion comprises: a horizontal portion; and a first vertical portion bent vertically upward from one end of the horizontal portion, the first vertical portion being integrally connected to the tip portion; a second vertical portion , bent vertically downward from the other end of the horizontal portion, the second vertical portion is integrally connected to the connecting portion,

wherein the lengths of the horizontal portion, the first vertical portion and the second vertical portion of the body portion are varied to form more than two types of probes, and

wherein the more than two kinds of probes are fixedly attached to the substrate of the probe card,

6. A method of manufacturing a probe comprising:

Step 1, apply a sacrificial layer on the entire upper surface of the silicon wafer, coat the upper surface of the sacrificial layer with a photoresist, and attach a first mask with a probe-shaped pattern to the top of the photoresist surface;

Step 2, exposing and developing the photoresist by means of the first mask, and removing the first mask;

Step 3, performing electrolytic plating on the upper surface of the sacrificial layer to form a first metal film, the sacrificial layer having a fixed pattern by means of the exposure and development;

Step 3-1, coating a second photoresist on the upper surface of the photoresist and the first metal film, and attaching a second mask to the upper surface of the second photoresist;

Step 3-2, exposing and developing the second photoresist by means of the second mask, and removing the second mask;

step 3-3, performing electrolytic plating on the upper surface of the first metal film to form a second metal film, the first metal film having a fixed pattern by means of the exposure and development; and

step 4, removing the photoresist and etching the sacrificial layer to separate the first metal film from the silicon wafer,

Wherein the first mask has a spacer portion, the spacer portion includes: a body portion bent at its middle; a connection portion integrally formed with a lower end of the body portion; and a tip portion with an upper end of the body portion integrally formed, and

Wherein the second mask has a spacer portion including: a body portion bent at a middle thereof; and a connection portion integrally formed with a lower end of the body portion.

7. The method according to claim 6, between said step 3-3 and said step 4, further comprising:

Step 4-1, coating the second photoresist and the second metal film on its upper surface with a third photoresist, and attaching a third mask to the upper surface of the third photoresist ;

Step 4-2, exposing and developing the third photoresist by means of the third mask, and removing the third mask; and

Step 4-3, performing electrolytic plating on the upper surface of the second metal film having a pattern fixed by the exposure and development to form a third metal film.

8. The method of claim 7, wherein the third mask has a spacer portion comprising: a body portion bent at a middle thereof; and a connection portion integrally formed with a lower end of the body portion.