[go: up one dir, main page]

CN1628187A - 在基底上进行电晕致化学气相沉积 - Google Patents

在基底上进行电晕致化学气相沉积 Download PDF

Info

Publication number
CN1628187A
CN1628187A CNA038033178A CN03803317A CN1628187A CN 1628187 A CN1628187 A CN 1628187A CN A038033178 A CNA038033178 A CN A038033178A CN 03803317 A CN03803317 A CN 03803317A CN 1628187 A CN1628187 A CN 1628187A
Authority
CN
China
Prior art keywords
substrate
gas
electrode
working gas
corona discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA038033178A
Other languages
English (en)
Other versions
CN100432289C (zh
Inventor
A·M·加贝尔尼克
R·T·福克斯
胡鹰锋
D·P·迪内加
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
Original Assignee
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Global Technologies LLC filed Critical Dow Global Technologies LLC
Publication of CN1628187A publication Critical patent/CN1628187A/zh
Application granted granted Critical
Publication of CN100432289C publication Critical patent/CN100432289C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/62Plasma-deposition of organic layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Organic Insulating Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Polymerisation Methods In General (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)

Abstract

叙述了一种通过电晕放电,在基底上建立等离子体聚合淀积层的方法。在电极和支持在基底上的反电极之间建立电晕放电。平衡气体和工作气体的混合物迅速地流经电极,通过电晕放电进行等离子体聚合,在基底上淀积出光学透明涂层。此方法优选在大气压或接近大气压的压力下实施,此方法可用来形成光学透明的无粉末或实际上无粉末的淀积层,它能够赋予基底以比如表面改性、抗化学性能和气体阻隔性能等性能。

Description

在基底上进行电晕致化学气相沉积
本发明涉及使用电晕致化学气相沉积法在基底上进行涂布或改性的方法。
普遍得到和廉价的聚合物,比如聚烯烃的应用,经常受到这些聚合物不希望的低表面能的限制。因此,在需要表面润湿性能(wettability)或粘接性能,或者同时需要这两者之处,经常要使用具有更高表面能的更加昂贵的材料。近年来,开发出了替代的方法,即使用电晕或等离子体放电进行低表面能聚合物的表面改性。
比如,美国专利5,576,076(Slootman等人)公开,可以通过在硅烷,比如SiH4、载气(carrier gas)和氧,或者能够产生氧的气体情况下,在大气压下对基底进行电晕放电,在移动的基底上建立氧化硅淀积层来改善聚烯烃薄膜的性能。虽然由Slootman等人叙述的方法确实赋予了聚合物表面更好的润湿性能,可是它至少有两个缺点。首先,优选的工作气体(SiH4)是一种非常有害的物质,它在空气中会自燃,其次,氧化硅的淀积层是粉末状的,淀积层的建立限制了潜在的应用范围,而且它会迅速地污染设备,导致实质的故障。
曾经使用辉光放电等离子体增强化学气相沉积(PECVD)在基底上产生涂层,以改善其耐化学、耐磨损、耐磨耗、耐划伤和气体透过性能。比如在美国专利6,106,659中,Spence等人叙述了一种圆柱形护套电极组合设备,能够以射频共振激发模式,或者以脉冲电压激发模式产生等离子体放电。该设备以粗真空(rough vacuum)模式操作,工作气体的压力为10~760Torr。据说在粗真空压力下操作胜过在严格的大气压下操作的优点是:由于与严格的大气压操作相比,所需供给气体的流速要明显地减少,使得更加经济地使用更为昂贵的特种气体。再有,与使用在低压或高压下操作的传统电晕型放电系统形成的涂层相比,产生的涂层具有优异的性能。
Spence等人叙述的方法,其不利之处是需要粗真空,与严格的大气压方法相比,这是商业上的缺点。因此,在PECVD的现有技术中,能够在大气压下建立连绵不断的(即非形成粉末的)涂层是个优点。
通过提供一种在基底上制备一种光学透明淀积层的方法,本发明致力于克服现有技术的缺点,该方法包括如下的步骤:1)在a)具有至少一个入口和至少一个出口的电极和b)支持在基底上的反电极之间的区域建立电晕放电;以及2)通过由平衡气体和工作气体,必要时还包括工作气体的载气组成的混合物流过电极,在足够的流速和使得在基底上形成光学透明淀积层的比例下进行电晕放电。
在本发明的第二方面,本发明是一种在基底上制备淀积层的方法,该方法包括如下步骤:1)在a)具有至少一个入口和至少一个出口的电极和b)支持在基底上的反电极(counterelectrode)之间建立电晕放电;以及2)通过由平衡气体和工作气体,必要时还包括工作气体的载气组成的混合物流过电极,在足够的流速和使得在基底上形成光学透明淀积层的比例下进行电晕放电,其中气体混合物的总流速使得通过至少一个出口的速度不小于0.1m/s,而且不大于1000m/s,其中基于全部气体混合物的工作气体的浓度不小于5ppm,不大于500ppm。
在本发明的第三方面,本发明是一个在移动的基底上制备光学透明涂层的连续的方法,该方法包括如下的步骤:1)在a)具有至少一个入口和至少一个出口的电极和b)在一个运动基底上支持的反电极之间的区域建立电晕放电;以及2)通过由平衡气体和工作气体,以及必要时还包括工作气体的载气组成的混合物流过电极,并进行电晕放电,借此在该基底上形成等离子体聚合的涂层,其中平衡气体的流速使得通过至少一个出口的速度不小于10m/s,不大于200m/s,其中基于全部气体混合物的工作气体浓度不小于5ppm,不大于200ppm,其中该光学透明涂层的光学透明度至少为98%,雾度值不大于2%。
图1说明在电晕放电方法中使用的优选的设备;
图2说明电极和反电极的侧视图;
图3说明具有裂缝作为出口部分的电极;
图4说明电极出口部分的排列和几何形状。
在本发明的方法中,给电极提供足够的功率密度和频率,以在电极和反电极之间的空间里建立并保持电晕放电,反电极优选是个运动的反电极。功率密度优选为至少1W/cm2,更优选为至少5W/cm2,最优选为至少10W/cm2;优选不大于200W/cm2,更优选不大于100W/cm2,最优选不大于50W/cm2。频率优选至少为2kHz,更优选至少为5kHz,最优选至少为10kHz;优选不大于100kHz,更优选不大于60kHz,最优选不大于40kHz。
在电极和反电极之间的间隔要足以形成并保持电晕放电,优选至少为0.1mm,更优选至少为1mm,优选不大于50mm,更优选不大于20mm,最优选不大于10mm。反电极优选为转鼓状的(rotating drum),优选装有介电护套,待涂布的基底优选沿着该转鼓运动。对于本发明的目的,术语电极和反电极通常用来指第一电极和第二电极,它们当中任何一个都可以接上电源,而另一个是接地的。
包括平衡气体和工作气体,必要时还含有工作气体的载气(在一起为总气体混合物)的气体混合物流过电极,该电极包括供这些气体流过的至少一个入口和至少一个出口,通过电晕放电使混合物进行等离子体聚合。然后由进行等离子体聚合的混合物在运动的基底上形成光学透明的涂层。
正如在此所使用的,术语“工作气体”指的是一种活性物质,在标准温度和压力下,它可以是气体,也可以不是气体,其要能够聚合而在基底上形成涂层。适当的工作气体的例子包括有机硅化合物,比如硅烷、硅氧烷和硅氮烷。硅烷的例子包括二甲氧基二甲基硅烷、甲基三甲氧基硅烷、四甲氧基硅烷、甲基三乙氧基硅烷、二乙氧基二甲基硅烷、甲基三乙氧基硅烷、三乙氧基乙烯基硅烷、四乙氧基硅烷、二甲氧基甲基苯基硅烷、苯基三甲氧基硅烷、3-缩水甘油基丙基三甲氧基硅烷、3-甲基丙烯酰基三甲氧基硅烷、二乙氧基甲基苯基硅烷、三(2-甲氧基乙氧基)乙烯基硅烷、苯基三乙氧基硅烷和二甲氧基二苯基硅烷。硅氧烷的例子包括四甲基二硅氧烷、六甲基二硅氧烷、八甲基三硅氧烷和原硅酸四乙酯。硅氮烷的例子包括六甲基硅氮烷和四甲基硅氮烷。硅氧烷是优选的工作气体,而四甲基二硅氧烷是特别优选的。
正如在此所使用的,“载气”指的是一种气体,优选是一种惰性气体,这种气体提供个一种一起融合平衡气体和工作气体的传统手段。优选的载气包括氮气、氦气和氩气。
正如在此所使用的,术语“平衡气体”是一种携带工作气体通过电极和最终通过基底的活性气体或非活性气体。适当的平衡气体包括空气、氧气、二氧化碳、臭氧、一氧化氮、氮气、氦气和氩气,以及它们的组合。总气体混合物的流速要足够高,以驱动工作气体在基底上发生等离子体聚合,形成连绵不断的膜,而不是粉末。总气体混合物的流速优选使得通过出口部分的气体速度至少为0.1m/s,更优选为至少1m/s,最优选至少为10m/s;而且优选不大于1,000m/s,更优选不大于500m/s,最优选不大于200m/s。
在此所定义的“电极”指的是具有入口和出口的单个的导电元件,或者是间隔分开以建立一个或多个供气体流过的间隙的多个导电元件。因此,术语“通过电极”指的是气体流过单个元件的入口和出口,或者流经多个元件的间隙。
除了控制绝对流速是重要的以外,控制确定工作气体在总气体混合物中浓度的平衡气体和工作气体的相对流速也有助于在基底上形成的涂层的质量。进入电晕放电的总气体混合物中工作气体的浓度要足以建立淀积层,优选是光学透明的涂层,而又要尽可能减少气相成核作用。气相成核会引起在涂层中形成颗粒和粉末,这会导致其物理性能下降,还会导致设备污染,使得造成昂贵的故障。总气体混合物中工作气体的浓度取决于工作气体和平衡气体的种类,以及所需涂层或表面改性的类型,但优选不小于1ppm,更优选不小于5ppm,最优选不小于10ppm;优选不大于2000ppm,更优选不大于1000ppm,最优选不大于500ppm。虽然在电晕放电区(即形成电晕放电的区域)施加真空或部分真空能够实施本方法,但优选电晕放电区不经受任何真空或部分真空的条件下实施本方法,这就是说优选在大气压下实施本方法。
如在本发明中所实施的,等离子体聚合一般会得到涂布了光学透明涂层的基底,或者得到表面改性的基底。在此使用的术语“光学透明”表示涂层具有的光学透明度为至少70%,更优选为至少90%,最优选为至少98%,而且雾度值优选不大于10%,更优选不大于2%,最优选不大于1%。光学透明度是透射-未散射光线与透射-未散射光线和透射-散射光线(<2.5°)之和的比值。雾度是透射-散射光线(>2.5°)与总透射光线的比值。(见比如ASTM D 1003-97)。涂层可以是比如表面改性涂层,比如粘接促进或防雾涂层、光学涂层,比如反射或抗反射涂层、耐化学涂层或用于包装的气体阻隔涂层。
在本发明中使用的基底没有特别的限制。基底的例子包括玻璃、金属、陶瓷、纸张、织物和塑料,比如包括聚乙烯和聚丙烯的聚烯烃、聚苯乙烯、聚碳酸酯和包括聚对苯二甲酸乙二醇酯和聚对苯二甲酸丁二醇酯的聚酯。
图1提供了在实施本发明的优选方法时使用的优选设备的说明。现在参考图1,从装有的挥发性液体(10a)的液面上产生工作气体(10),并且工作气体被载气(12)携带离开液面,与平衡气体(14)融合到达电极(16)。载气(12)和平衡气体(14)驱动工作气体(10)通过电极(16),更具体说,通过电极的至少一个入口(18)并通过出口(20),这些出口一般是是多个导电元件之间的狭缝或孔,或者间隙。在电极(16)上施加电能,在电极(16)和呈圆柱状并优选装有介电护套的反电极(24)之间建立电晕放电。应该理解,电极(16)也可以或另外装有介电护套(图中未显示)。基底(28)连续地通过该介电护套(26),被等离子体聚合的工作气体涂布,这里的工作气体优选是聚合的硅氧烷。
图2是电极(16)、反电极(24)和电晕放电区(22)的侧视图。在这里基底是导体,介电层(26)位于不动的电极(16)上面,而不是运动的反电极(24)。
图3说明电极出口的一个优选实施方案,该出口的形状是平行的或基本上平行的,基本上均匀地具有间隔的在大致电极长度上展开的狭缝。狭缝的宽度优选不小于0.1mm,更优选不小于0.2mm,最优选不小于0.5mm;优选不大于10mm,更优选不大于5mm,最优选不大于2mm。
图4说明电极出口(20)的另一种优选的几何形状和间隔,出口的形状是实质上圆形的孔。如果用这样的几何形状来实施本发明的方法,出口的直径不小于0.05mm,更优选不小于0.1mm,最优选不小于0.2mm;优选不大于10mm,更优选不大于5mm,最优选不大于1mm。
令人惊奇地发现,使用本发明的方法,能够在基底上连续地淀积出单片的、光学透明的连续涂层,它不含粉末或者实质上不含粉末。再有,可以调节工艺参数以形成1)赋予基底对各类化学物质具有耐化学性(如ASTM 543所定义)的涂层,这些化学物质包括a)溶剂,包括丙酮、苯、四氯化碳、二乙醚、二甲基甲酰胺、乙酸乙酯、二氯乙烷和甲苯;b)酸,包括醋酸、盐酸、氢氟酸、硝酸和硫酸;和c)碱,包括氢氧化铵、氢氧化钠,以及苯酚;2)具有改善的气体阻隔性能的涂层,这包括空气、氧气(O2GTR,ASTM D 3985)、水蒸气(WVTR,ASTMF 1249)和二氧化碳(GTR,ASTM D 1434);3)被表面改性以产生粘接促进性能和防雾性能的基底;和4)具有所需折射率的光学涂层。
下面的实施例用于说明的目的,不以任何方式对本发明构成限制。
实施例1-在基底上制备光学透明涂层的方法
使用实质上如在图1中所述的装置制备涂层。由康涅狄格州的Farmington的Corotec Industries公司得到反电极和电源(固定在30kHz)。如在图3所说明的,电极长5.5英寸,宽3英寸,高2英寸,(即14cm×7.5cm×5cm)具有单一的入口和4个狭缝形状的出口。这些狭缝每个宽1mm,并伸展在电极的整个长度上,每个狭缝之间有1.5cm的间隔。在每一个实施例中使用同样的装置。
基底是Lexan聚碳酸酯薄膜(得自General Electric公司),厚度7mil(0.18mm)。在氮气中携带四甲基二硅氧烷(TMDSO),浓度是16%v/v(百分比浓度),与平衡气体空气混合。调节TMDSO的流速为80sccm,平衡气体的流速为40scfm(1.1×106sccm),计算出基于总气体混合物的TMDSO浓度为70ppm。电晕放电的功率密度是12W/cm2
在淀积时间达到40秒以后,得到的涂层,其厚度为1μm,其化学组成是SiOxCyHz。测量被涂布的基底的光学透明度是99.7%,而原始基底为100%。发现被涂布基底的雾度是0.7,而原始基底的雾度是0.6。两个测量都是按照ASTM D 1003-97进行的。
实施例2-制备具有耐溶剂性能基底的方法
基底、工作气体、工作气体的载气、平衡气体和平衡气体的流速都是同样的。调节TMDSO的流速为50sccm(45ppm)。功率密度为15W/cm2。在淀积时间达到10秒以后,得到的涂层的组成是SiOxCyHz,厚度为150nm。按照ASTM 543的方法,将未涂布的基底和涂布过的基底都在丙酮中浸泡10分钟。发现未涂布的基底变成乳白色,并且开裂,而涂布过的基底没有受到实质性的影响。
实施例3-制备具有高表面能基底的方法
基底是20g/m2的聚丙烯非织造布。工作气体、工作气体的载气、平衡气体和平衡气体流速都与上面几个实施例同样。调节TMDSO的流速为35sccm(30ppm)。功率密度为5W/cm2,淀积时间是7秒。发现未涂布的基底的表面能为35dyn/cm,而涂布过的为52dyn/cm.
实施例4-制备气体阻隔涂层
使用两种不同的工作气体在Lexan聚碳酸酯薄膜上淀积上两层。工作气体的载气、平衡气体和平衡气体流速都与前面各个实施例相同。第一层是具有SiOxCyHz组成的粘结层,是以保持65sccm(60ppm)流速的TMDSO作为工作气体形成的。功率密度设为10W/cm2,淀积时间是10sec。第二层是组成为SiOx的阻隔层,是用保持15sccm(13ppm)流速的原硅酸四乙酯(TEOS)作为工作气体形成的。功率密度设定为15W/cm2,淀积时间是25秒。按照ASTM D 3985测量涂布过的基底和未涂布的基底的氧气透过率(O2GTR)。未涂布基底的O2GTR是32mL/100in2·d·atmO2,而涂布过基底的是0.05mL/100in2·d·atmO2

Claims (10)

1.在基底上制备光学透明淀积层的方法,该方法包括如下的步骤:1)在a)具有至少一个入口和至少一个出口的电极和b)支持在基底上的反电极之间的区域建立电晕放电;以及2)由平衡气体和工作气体,必要时还包括工作气体的载气组成的混合物,流过所述电极,并且以充分的流速和使得在基底上形成光学透明淀积层的比例下进行电晕放电。
2.如权利要1求的方法,其中该方法是连续的,该反电极支持一运动的基底。
3.如权利要求1或2中任何一项的方法,其中所述反电极是一个转鼓,其中所述转鼓或所述电极的任何一方,或者所述转鼓和所述电极的双方都装有介电护套。
4.如权利要求1~3中任何一项的方法,其中所述工作气体是有机硅氧烷,所述平衡气体是空气、氧气、氮气、氦气、氩气或者它们的组合。
5.如权利要求1~4中任何一项的方法,其中所述电极的至少一个所述出口是多个孔或狭缝,所述平衡气体的所述速度使得,通过所述孔或狭缝的平衡气体的速度不小于0.1m/s,而且不大于1000m/s,其中进入所述电晕放电区的所述工作气体,其基于总气体混合物的浓度不小于1ppm,不大于2000ppm,其中所述工作气体是四甲基二硅氧烷、六甲基二硅氧烷、八甲基三硅氧烷、原硅酸四乙酯或它们的组合。
6.如权利要求5的方法,其中该淀积层是光学透明度至少为98%,雾度不大于2%的涂层。
7.如权利要求5的方法,其中与未涂布的基底相比,该基底在等离子体聚合淀积以后,具有增大了的表面能。
8.如权利要求5的方法,其中该淀积形成了赋予基底抗化学性能的涂层。
9.如权利要求5的方法,其中该淀积形成了具有比未涂布的基底更大的气体阻隔性的涂层。
10.在一个运动的基底上连续制备光学透明涂层的方法,该方法包括如下的步骤:1)在a)具有至少一个入口和至少一个出口的电极和b)在一个运动基底上支持的反电极之间的区域中建立电晕放电;以及2)由平衡气体和工作气体,以及必要时还包括工作气体的载气组成的混合物流过该电极,并进行电晕放电,借此在该基底上形成等离子体聚合的涂层,其中所述平衡气体的流速使得通过至少一个所述出口的速度不小于10m/s,不大于200m/s,其中基于全部气体混合物的所述工作气体浓度不小于5ppm,不大于200ppm,其中该光学透明涂层的光学透明度至少为98%,雾度值不大于2%。
CNB038033178A 2002-02-05 2003-02-03 在基底上进行电晕致化学气相沉积 Expired - Fee Related CN100432289C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US35490502P 2002-02-05 2002-02-05
US60/354,905 2002-02-05
US40864002P 2002-09-06 2002-09-06
US60/408,640 2002-09-06

Publications (2)

Publication Number Publication Date
CN1628187A true CN1628187A (zh) 2005-06-15
CN100432289C CN100432289C (zh) 2008-11-12

Family

ID=27737478

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038033178A Expired - Fee Related CN100432289C (zh) 2002-02-05 2003-02-03 在基底上进行电晕致化学气相沉积

Country Status (8)

Country Link
US (1) US6815014B2 (zh)
EP (1) EP1472387B1 (zh)
JP (1) JP4494792B2 (zh)
CN (1) CN100432289C (zh)
AT (1) ATE402277T1 (zh)
AU (1) AU2003207794A1 (zh)
DE (1) DE60322347D1 (zh)
WO (1) WO2003066932A1 (zh)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8586149B2 (en) 2003-06-18 2013-11-19 Ford Global Technologies, Llc Environmentally friendly reactive fixture to allow localized surface engineering for improved adhesion to coated and non-coated substrates
CN100450647C (zh) * 2003-09-09 2009-01-14 陶氏环球技术公司 辉光放电产生的化学气相沉积
DE102004029466A1 (de) * 2004-06-18 2006-01-05 Leybold Optics Gmbh Medieninjektor
KR20070057200A (ko) * 2004-09-27 2007-06-04 다우 글로벌 테크놀로지스 인크. 플라즈마 강화 화학 기상 증착에 의한 다층 코팅
MX2007005122A (es) * 2004-10-29 2007-06-22 Dow Global Technologies Inc Procedimiento de vapor quimico mejorado de plasma de velocidad de deposicion mejorada.
MX2007005123A (es) * 2004-10-29 2007-06-25 Dow Global Technologies Inc Revestimientos resistentes a la abrasion a traves de deposicion de vapor quimica mejorada de plasma.
CA2622429A1 (en) * 2005-09-20 2007-03-29 Dow Global Technologies Inc. Process for plasma assisted coating a nanocomposite object
US7517561B2 (en) 2005-09-21 2009-04-14 Ford Global Technologies, Llc Method of coating a substrate for adhesive bonding
TWI275658B (en) * 2006-09-13 2007-03-11 Ind Tech Res Inst Method of improving surface frame resistance of a substrate
TW200814170A (en) * 2006-09-13 2008-03-16 Ind Tech Res Inst Method of adjusting surface characteristic of a substrate
WO2009017964A1 (en) * 2007-07-30 2009-02-05 Dow Global Technologies Inc. Atmospheric pressure plasma enhanced chemical vapor deposition process
KR100962044B1 (ko) * 2007-12-06 2010-06-08 성균관대학교산학협력단 저유전 플라즈마 중합체 박막 및 그 제조 방법
EP2251453B1 (en) 2009-05-13 2013-12-11 SiO2 Medical Products, Inc. Vessel holder
WO2010092384A1 (en) * 2009-02-12 2010-08-19 Fujifilm Manufacturing Europe Bv Two layer barrier on polymeric substrate
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US7985188B2 (en) 2009-05-13 2011-07-26 Cv Holdings Llc Vessel, coating, inspection and processing apparatus
DE102009030303A1 (de) * 2009-06-24 2010-12-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Antireflexschicht-bildenden Beschichtungen sowie Antireflexbeschichtungen
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
WO2011136812A1 (en) 2010-04-30 2011-11-03 Hewlett-Packard Development Company, L.P. Printing system
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
EP2589366A1 (de) * 2011-11-07 2013-05-08 IDT Biologika GmbH Biologisch abbaubare Folienverpackung für orale Biologika
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
WO2013071138A1 (en) 2011-11-11 2013-05-16 Sio2 Medical Products, Inc. PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS
US8945418B2 (en) * 2011-11-16 2015-02-03 The United States Of America, As Represented By The Secretary Of The Navy Melt stabilization and vapor-phase synthesis of cesium germanium halides
US20150297800A1 (en) 2012-07-03 2015-10-22 Sio2 Medical Products, Inc. SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS
CN104854257B (zh) 2012-11-01 2018-04-13 Sio2医药产品公司 涂层检查方法
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
WO2014085348A2 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US20160015898A1 (en) 2013-03-01 2016-01-21 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
CA2904611C (en) 2013-03-11 2021-11-23 Sio2 Medical Products, Inc. Coated packaging
US9863042B2 (en) 2013-03-15 2018-01-09 Sio2 Medical Products, Inc. PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases
EP2896502B1 (en) * 2014-01-16 2017-03-08 ThyssenKrupp Steel Europe AG Composite sheet and method of manufacturing
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
BR112018003051B1 (pt) 2015-08-18 2022-12-06 Sio2 Medical Products, Inc Tubo de coleta de sangue submetido a vácuo
DE102019124489B3 (de) * 2019-09-12 2020-11-12 VON ARDENNE Asset GmbH & Co. KG Vakuumanordnungen, Verfahren und Verwendung einer Elektrode im Vakuum
EP4297619A2 (en) * 2021-03-04 2024-01-03 Yeti Coolers, LLC Surface coating of drinkware

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US424103A (en) * 1890-03-25 Steam-generator
DE3705482A1 (de) * 1987-02-20 1988-09-01 Hoechst Ag Verfahren und anordnung zur oberflaechenvorbehandlung von kunststoff mittels einer elektrischen koronaentladung
GB8713986D0 (en) * 1987-06-16 1987-07-22 Shell Int Research Apparatus for plasma surface treating
NL8701530A (nl) * 1987-06-30 1989-01-16 Stichting Fund Ond Material Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze.
US4894352A (en) * 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
US5176938A (en) * 1988-11-23 1993-01-05 Plasmacarb Inc. Process for surface treatment of pulverulent material
US5194291A (en) * 1991-04-22 1993-03-16 General Atomics Corona discharge treatment
DE4225106C2 (de) * 1992-07-30 1995-10-05 Heraeus Kulzer Gmbh Verfahren und Vorrichtung zur Herstellung eines Metall-Kunststoff-Verbundes
KR960000190B1 (ko) * 1992-11-09 1996-01-03 엘지전자주식회사 반도체 제조방법 및 그 장치
FR2704558B1 (fr) * 1993-04-29 1995-06-23 Air Liquide Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement.
US5456972A (en) * 1993-05-28 1995-10-10 The University Of Tennessee Research Corporation Method and apparatus for glow discharge plasma treatment of polymer materials at atmospheric pressure
US6106659A (en) * 1997-07-14 2000-08-22 The University Of Tennessee Research Corporation Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
US6083355A (en) * 1997-07-14 2000-07-04 The University Of Tennessee Research Corporation Electrodes for plasma treater systems
WO1999004411A1 (en) * 1997-07-14 1999-01-28 The University Of Tennessee Research Corporation Plasma treater systems and treatment methods
US6082292A (en) * 1999-01-05 2000-07-04 Wisconsin Alumni Research Foundation Sealing roller system for surface treatment gas reactors
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure
EP1198610A4 (en) 1999-05-14 2004-04-07 Univ California LOW TEMPERATURE COMPATIBLE PLASMA FLOW DEVICE WITH LARGE PRESSURE RANGE

Also Published As

Publication number Publication date
WO2003066932A1 (en) 2003-08-14
JP2005533174A (ja) 2005-11-04
US20040091637A1 (en) 2004-05-13
DE60322347D1 (de) 2008-09-04
JP4494792B2 (ja) 2010-06-30
CN100432289C (zh) 2008-11-12
EP1472387A1 (en) 2004-11-03
ATE402277T1 (de) 2008-08-15
EP1472387B1 (en) 2008-07-23
HK1072279A1 (zh) 2005-08-19
US6815014B2 (en) 2004-11-09
AU2003207794A1 (en) 2003-09-02

Similar Documents

Publication Publication Date Title
CN100432289C (zh) 在基底上进行电晕致化学气相沉积
JP5267713B2 (ja) 透明ガスバリア性フィルムおよびその製造方法、並びに有機エレクトロルミネッセンス素子
US20080095954A1 (en) Multilayer Coatings By Plasma Enhanced Chemical Vapor Deposition
NZ244055A (en) Fast plasma enhanced silicon oxide based film vapour deposition
JPWO2008096617A1 (ja) 透明ガスバリア性フィルム及び透明ガスバリア性フィルムの製造方法
CN101048532A (zh) 改进的沉积速率等离子体增强化学气相方法
CN1845797A (zh) 辉光放电产生的化学气相沉积
US20090053526A1 (en) Gas barrier laminate and production method of the same
JP2005272957A (ja) 表面処理方法及び該表面処理方法により表面処理された基材
JPWO2006075490A1 (ja) 透明ガスバリアフィルム
JP3840080B2 (ja) ガスバリアフィルム
HK1072279B (zh) 在底物上產生光暈的化學汽相淀積
JP2005307321A (ja) 薄膜形成装置及び薄膜形成方法
JP2005076099A (ja) 薄膜の製造方法とそれにより造られた薄膜、積層薄膜、透明プラスチックフィルム、及び積層薄膜付き有機el素子
US4776298A (en) Apparatus for performing a plasma enhanced chemical vapor deposition on an edge of a polycarbonate sheet
JP2001048591A (ja) 表面撥水性ガラス及びその製造方法
JPH08290517A (ja) プラスチックスシートからなる包装材料にガス遮断性に優れた珪素酸化物薄膜を被覆する方法
JP2006002224A (ja) 薄膜形成方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081112

Termination date: 20200203

CF01 Termination of patent right due to non-payment of annual fee