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CN1568102A - Method for repairing pixel defect of organic light-emitting element - Google Patents

Method for repairing pixel defect of organic light-emitting element Download PDF

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CN1568102A
CN1568102A CN 03141040 CN03141040A CN1568102A CN 1568102 A CN1568102 A CN 1568102A CN 03141040 CN03141040 CN 03141040 CN 03141040 A CN03141040 A CN 03141040A CN 1568102 A CN1568102 A CN 1568102A
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organic light
emitting element
electrode
pixel defects
insulating layer
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郭志明
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RiTdisplay Corp
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Abstract

The invention provides a pixel defect repairing method of an organic light-emitting element, which is used for repairing the organic light-emitting element with a substantial short circuit phenomenon. The pixel defect repairing method of the organic light-emitting element comprises the following steps: an electrical testing step and an isolation layer forming step, wherein, in the electrical testing step, a current or a voltage is applied between the first electrode and the second electrode of the organic light-emitting element so as to form an open circuit at the substantial short circuit position of the organic light-emitting element; in the isolation layer forming step, an isolation layer is formed at the open circuit position of the organic light emitting element. The present invention also provides another embodiment of a pixel defect repairing method for an organic light emitting device, which is different from the pixel defect repairing method for an organic light emitting device described above in that the method further comprises an electrical property detecting step.

Description

有机发光元件像素缺陷修复方法Method for repairing pixel defect of organic light-emitting element

技术领域technical field

本发明关于一种有机发光元件像素缺陷修复方法,特别是一种能够修复实质短路处的有机发光元件像素缺陷修复方法。The present invention relates to a method for repairing pixel defects of organic light-emitting elements, in particular to a method for repairing pixel defects of organic light-emitting elements capable of repairing substantial short circuits.

背景技术Background technique

有机发光元件制程中,有机发光元件经由光刻法(photolithography)定义出导电阳极与辅助阳极,接着于真空腔体内进行有机材料以及无机材料(阴极层)的镀膜步骤。由于水气以及氧气会影响有机发光元件的寿命,因此在镀膜步骤之后需进行封装制程,以避免减少元件寿命。In the manufacturing process of the organic light-emitting device, the organic light-emitting device defines a conductive anode and an auxiliary anode through photolithography, and then carries out a coating step of organic materials and inorganic materials (cathode layer) in a vacuum chamber. Since moisture and oxygen will affect the lifetime of the organic light-emitting device, an encapsulation process is required after the coating step to avoid reducing the lifetime of the device.

一般在制程过程中,由于基板缺陷或是制作环境洁净度不佳,有机发光元件容易产生短路的问题,进而使得电流仅通过缺陷处而无法驱动所有像素,影响了元件的发光效率与图像显示效果;同时,当有机发光元件为被动式驱动时,不但单一像素无法发光,亦会影响整条纵列或是横排的像素操作。Generally, during the manufacturing process, due to substrate defects or poor cleanliness of the manufacturing environment, organic light-emitting elements are prone to short-circuit problems, which makes the current only pass through the defects and cannot drive all pixels, which affects the luminous efficiency of the element and the image display effect. ; At the same time, when the organic light-emitting device is passively driven, not only a single pixel cannot emit light, but also the operation of the entire vertical or horizontal row of pixels will be affected.

如图1所示,现有技术中的有机发光元件检测方法于有机发光元件进行封装步骤(S21)之后,接着再以面板测试步骤(S22)测试整个成品的良劣。当有机发光元件具有短路现象时,整个元件在经过面板测试之后,由于元件外层已经进行封装,所以无法进行内部个别像素缺陷的修补,而直接被淘汰。如此,将会导致产品良率的下降,亦增加制造成本。As shown in FIG. 1 , in the prior art organic light-emitting device inspection method, after the organic light-emitting device is packaged ( S21 ), the quality of the entire finished product is tested by a panel test step ( S22 ). When the organic light-emitting element has a short circuit phenomenon, after the entire element has been tested by the panel, because the outer layer of the element has been packaged, it is impossible to repair individual pixel defects inside, and it is directly eliminated. In this way, the yield rate of the product will be reduced, and the manufacturing cost will also be increased.

发明人本着积极创新的精神,亟思一种可以解决上述问题的「有机发光元件像素缺陷修复方法」,几经研究实验终至完成此发明。In the spirit of active innovation, the inventor thought hard about a "method for repairing pixel defects of organic light-emitting devices" that could solve the above-mentioned problems, and finally completed the invention after several researches and experiments.

发明内容Contents of the invention

本发明的目的提供一种增加产品良率、提高信赖度以及降低制造成本的有机发光元件像素缺陷修复方法。The object of the present invention is to provide a method for repairing pixel defects of an organic light-emitting element that increases product yield, improves reliability, and reduces manufacturing costs.

为达上述目的,本发明提供一种有机发光元件像素缺陷修复方法,用以修复具有实质短路现象的有机发光元件,有机发光元件于基板上包含一第一电极、一有机发光层以及一第二电极。有机发光元件像素缺陷修复方法包含下列步骤:一电气测试步骤以及一隔绝层形成步骤,其中,于电气测试步骤中,于有机发光元件的第一电极与第二电极间施以一电流或电压,以使有机发光元件的实质短路处形成断路;于隔绝层形成步骤中,于有机发光元件的断路处形成一隔绝层。同时,本发明亦提供上述有机发光元件像素缺陷修复方法的另一实施方式,与上述有机发光元件像素缺陷修复方法不同之处在于,该方法更包含一电性检测步骤;其中,于电性检测步骤中,检测于电气测试步骤中有机发光元件的短路程度,当所检测的短路处除以断路处的比例少于一定值时或是漏电流低于一定值时;于后续的隔绝层形成步骤中,在断路处形成一隔绝层。To achieve the above purpose, the present invention provides a method for repairing pixel defects of an organic light-emitting element, which is used for repairing an organic light-emitting element with a substantial short circuit phenomenon. The organic light-emitting element includes a first electrode, an organic light-emitting layer, and a second electrode on a substrate. electrode. The method for repairing pixel defects of an organic light-emitting element includes the following steps: an electrical test step and an insulating layer forming step, wherein, in the electrical test step, a current or voltage is applied between the first electrode and the second electrode of the organic light-emitting element, To form an open circuit at the substantially short circuit of the organic light-emitting element; in the step of forming the insulating layer, an insulating layer is formed at the open circuit of the organic light-emitting element. At the same time, the present invention also provides another embodiment of the above-mentioned method for repairing pixel defects of organic light-emitting devices, which is different from the above-mentioned method for repairing pixel defects of organic light-emitting devices in that the method further includes an electrical testing step; wherein, in the electrical testing In the step of detecting the short circuit degree of the organic light-emitting element in the electrical testing step, when the ratio of the detected short circuit divided by the open circuit is less than a certain value or the leakage current is lower than a certain value; in the subsequent insulating layer forming step , forming an insulating layer at the break.

与现有技术相比,在本发明中提供一种有机发光元件像素缺陷修复方法,此方法修复具有实质短路处的有机发光元件,不仅能够在进行封装步骤之前找出短路的地方,同时修补该短路处,进而使其丧失导电性质,让原本具有缺陷处的像素与相邻无缺陷的像素具有同等的发光能力,而无需直接淘汰整个面板,同时增加了产品的良率以及信赖度,更进一步降低了产品的制造成本。Compared with the prior art, the present invention provides a method for repairing pixel defects of an organic light-emitting element. This method repairs an organic light-emitting element with a substantial short circuit, which can not only find out the short circuit before performing the packaging step, but also repair the defect at the same time. Short circuit, and then make it lose its conductive properties, so that the pixel with the original defect has the same light-emitting ability as the adjacent non-defective pixel, without directly eliminating the entire panel, and at the same time increases the yield and reliability of the product, and goes further The manufacturing cost of the product is reduced.

附图说明Description of drawings

图1现有技术中的有机发光元件像素缺陷检测方法的方块图。FIG. 1 is a block diagram of a pixel defect detection method of an organic light-emitting element in the prior art.

图2本实施例的有机发光元件像素缺陷修复方法的方块图。FIG. 2 is a block diagram of a method for repairing a pixel defect of an organic light-emitting device according to this embodiment.

图3a及图3b本实施例的电气测试步骤的示意图。3a and 3b are schematic diagrams of the electrical testing steps of this embodiment.

图4a及图4b本实施例的有机发光元件实质短路的示意图。FIG. 4a and FIG. 4b are schematic diagrams of a substantial short circuit of the organic light-emitting element of this embodiment.

图5a及图5b本实施例的电气测试步骤后所得断路处的示意图。Fig. 5a and Fig. 5b are schematic diagrams of the open circuit obtained after the electrical testing steps of this embodiment.

图6a及图6b本实施例的隔绝层形成步骤的示意图。6a and 6b are schematic diagrams of the steps of forming the insulating layer in this embodiment.

图7本发明另一实施例的有机发光元件像素缺陷修复方法的方块图。FIG. 7 is a block diagram of a method for repairing a pixel defect of an organic light emitting device according to another embodiment of the present invention.

图中符号说明Explanation of symbols in the figure

1    有机发光元件1 organic light emitting element

11   第一电极11 first electrode

12   有机发光层12 organic light-emitting layer

13   第二电极13 second electrode

2    隔绝层2 insulation layer

3    杂质3 Impurities

S01  电气测试步骤S01 Electrical test procedure

S02  隔绝层形成步骤S02 Insulation layer formation step

S11  电气测试步骤S11 Electrical Test Procedure

S12  电性检测步骤S12 electrical testing steps

S13  隔绝层形成步骤S13 Insulation layer forming step

S21  封装步骤S21 Packaging steps

S22  面板测试步骤S22 panel test procedure

具体实施方式Detailed ways

以下将参照相关附图,说明依据本发明实施例的一种有机发光元件像素缺陷修复方法,其中相同的元件将以相同的参照符号加以说明。A method for repairing pixel defects of an organic light-emitting device according to an embodiment of the present invention will be described below with reference to related drawings, wherein the same components will be described with the same reference symbols.

对于一有机发光元件而言,其具有数组排列的像素,而于本发明的实施例中为方便说明,以下将以一像素代替整个有机发光元件的像素。For an organic light emitting device, it has pixels arranged in arrays, and in the embodiments of the present invention, for convenience of description, a pixel will be used to replace the entire pixel of the organic light emitting device.

本发明提供一种有机发光元件像素缺陷修复方法,用以修复具有实质短路现象的一有机发光元件1,有机发光元件1于基板上包含一第一电极11、一有机发光层12以及一第二电极13,有机发光元件像素缺陷修复方法包含下列步骤:一电气测试步骤(S01)以及一隔绝层形成步骤(S02),如图2所示。The present invention provides a method for repairing pixel defects of an organic light-emitting element, which is used to repair an organic light-emitting element 1 with a substantial short circuit phenomenon. The organic light-emitting element 1 includes a first electrode 11, an organic light-emitting layer 12, and a second electrode on a substrate. The electrode 13, the method for repairing the pixel defect of the organic light-emitting element includes the following steps: an electrical testing step (S01) and an insulating layer forming step (S02), as shown in FIG. 2 .

其中,如图3a及图3b所示,于电气测试步骤(S01)中,于有机发光元件1的第一电极11与第二电极13间施以一电流或电压,以使有机发光元件1的实质短路处因通电流产生热能而形成断路;于隔绝层形成步骤(S02)中,于有机发光元件1的断路处形成一隔绝层2。Wherein, as shown in FIG. 3a and FIG. 3b, in the electrical testing step (S01), a current or voltage is applied between the first electrode 11 and the second electrode 13 of the organic light emitting element 1, so that the organic light emitting element 1 The substantially short-circuited part forms an open circuit due to the heat generated by passing current; in the insulating layer forming step ( S02 ), an insulating layer 2 is formed at the open circuit of the organic light-emitting element 1 .

于本实施例中,第一电极11为一可导电的金属氧化物,该可导电的金属氧化物可为氧化铟锡(ITO)、氧化铟锌(IZO)或是氧化铝锌(AZO)。In this embodiment, the first electrode 11 is a conductive metal oxide, and the conductive metal oxide can be indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum zinc oxide (AZO).

另外,有机发光层12可包含一空穴注入层、一空穴传递层、一发光层、一电子传递层以及一电子注入层,小分子有机发光层12以蒸镀法形成;而高分子有机发光层12以旋转涂布法、喷墨法或是印刷法形成。其中,空穴注入层的主要材料为copper phthalocyanine(CuPc);空穴传输层的材料主要为4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(NPB);电子注入层的材料主要为氟化锂(LiF);电子传输层的材料主要为tris(8-quinolinato-N1,08)-aluminum(Alq)。In addition, the organic light-emitting layer 12 may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The small-molecule organic light-emitting layer 12 is formed by vapor deposition; 12 is formed by spin coating method, inkjet method or printing method. Among them, the main material of the hole injection layer is copper phthalocyanine (CuPc); the material of the hole transport layer is mainly 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB); The material of the layer is mainly lithium fluoride (LiF); the material of the electron transport layer is mainly tris(8-quinolinato-N1,08)-aluminum(Alq).

接着,第二电极13以蒸镀法或是溅镀法形成,其材质可为铝、铝/锂、钙、镁银合金或是银。Next, the second electrode 13 is formed by vapor deposition or sputtering, and its material can be aluminum, aluminum/lithium, calcium, magnesium-silver alloy or silver.

请再参考图3a,电气测试步骤(S01)于有机发光元件1的第一电极11与第二电极13间分别施以一正电以及一负电,使有机发光元件1的实质短路处形成断路。另外,亦可于第一电极11与第二电极13间分别施以一负电以及一正电,如图3b所示。电气测试步骤(S01)于一缓冲腔体(buffer chamber)或是单一腔体(single chamber)的环境中进行,其内部为真空,同时亦能充填(vent)惰性气氛(inert gas)。Please refer to FIG. 3 a again. In the electrical testing step ( S01 ), a positive charge and a negative charge are respectively applied between the first electrode 11 and the second electrode 13 of the organic light emitting element 1 to form an open circuit at the substantially short circuit of the organic light emitting element 1 . In addition, a negative charge and a positive charge can also be applied between the first electrode 11 and the second electrode 13, respectively, as shown in FIG. 3b. The electrical test step (S01) is performed in a buffer chamber or a single chamber environment, the interior of which is vacuum, and can also be filled with an inert gas.

其中,实质短路指真正短路或是接近短路的情况。造成有机发光元件1实质短路的情况主要有二:其一于有机发光元件制造过程中,由于制作环境的无尘室洁净度不足,使杂质3(气泡或微粒)掉入有机发光元件1中,造成实质短路,如图4a所示。同时,另一个情况为第一电极11表面不平坦所造成的实质短路,如图4b所示。Wherein, the substantial short circuit refers to a real short circuit or a near short circuit. There are two main situations that cause the organic light-emitting element 1 to be substantially short-circuited: first, during the manufacturing process of the organic light-emitting element, impurities 3 (bubbles or particles) fall into the organic light-emitting element 1 due to insufficient cleanliness of the manufacturing environment; A substantial short circuit is caused, as shown in Figure 4a. Meanwhile, another situation is a substantial short circuit caused by the uneven surface of the first electrode 11 , as shown in FIG. 4 b .

图5a及图5b为图4a及图4b中有机发光元件1经过电气测试步骤(S01)后所得的断路情形。由于在有机发光元件制程步骤中,基板镀膜面多为向下,从图5a及图5b可知,在经过电气测试步骤(S01)后,有机发光层12与第二电极13会产生向外翘曲的情况,若不实时进行隔绝层形成步骤(S02),在往后的制程步骤中,只要基板镀膜面有机会被翻转向上,第二电极13有可能再次与第一电极11接触而形成短路现象。5a and 5b are the open circuit conditions obtained after the organic light emitting element 1 in FIG. 4a and FIG. 4b undergoes the electrical test step ( S01 ). Since the coating surface of the substrate is mostly downward during the process steps of the organic light-emitting element, it can be seen from Fig. 5a and Fig. 5b that after the electrical test step (S01), the organic light-emitting layer 12 and the second electrode 13 will warp outward. In this case, if the insulating layer forming step (S02) is not performed in real time, in the following process steps, as long as the coated surface of the substrate has a chance to be turned upward, the second electrode 13 may contact the first electrode 11 again to form a short circuit phenomenon .

隔绝层形成步骤(S02)于有机发光元件1的断路处形成一隔绝层2,且隔绝层2局部渗入有机发光层中,如图6a及图6b所示。隔绝层形成步骤(S02)利用真空蒸镀方式于断路处形成一隔绝层2,在此,隔绝层2的材料可为构成有机发光层12的有机材料,例如:空穴注入层、空穴传递层、发光层、电子传递层以及电子注入层的材料,或是具有高电阻的无机材料如氮化硅、氧化硅以及氮氧化硅。另外,与钝化保护层镀膜系统(passivation coating system)连结时,更可用具有高电阻的高分子当作隔绝层2材料,如氟化树脂、Parylene等。The insulating layer forming step ( S02 ) forms an insulating layer 2 at the disconnection of the organic light-emitting element 1 , and the insulating layer 2 partially penetrates into the organic light-emitting layer, as shown in FIG. 6 a and FIG. 6 b . The insulating layer forming step (S02) forms an insulating layer 2 at the disconnection by vacuum evaporation. Here, the material of the insulating layer 2 can be an organic material constituting the organic light-emitting layer 12, such as: a hole injection layer, a hole transport layer, etc. layer, light-emitting layer, electron transport layer, and electron injection layer, or inorganic materials with high resistance such as silicon nitride, silicon oxide, and silicon oxynitride. In addition, when combined with the passivation coating system, high-resistance polymers can be used as the insulating layer 2 material, such as fluorinated resin, Parylene, etc.

隔绝层形成步骤(S02)亦可为在一不含水气的含氧气氛中氧化第二电极13,在第二电极13的表面形成一氧化层,用以隔绝第二电极13与第一电极11,进而达到保持断路的效果。The insulating layer forming step (S02) may also be oxidizing the second electrode 13 in an oxygen-containing atmosphere free of moisture to form an oxide layer on the surface of the second electrode 13 to isolate the second electrode 13 from the first electrode 11 , so as to achieve the effect of maintaining an open circuit.

图7所示本发明的有机发光元件像素缺陷修复方法的另一实施例。如图7所示,依本发明的有机发光元件像素缺陷修复方法,包含一电气测试步骤(S11)、一电性检测步骤(S12)以及隔绝层形成步骤(S13)。其中,除了电性检测步骤(S12)以及隔绝层形成步骤(S13)外,其余的元件及特征皆与第一实施例相同。FIG. 7 shows another embodiment of the method for repairing pixel defects of an organic light-emitting element of the present invention. As shown in FIG. 7 , the method for repairing pixel defects of an organic light-emitting device according to the present invention includes an electrical testing step ( S11 ), an electrical testing step ( S12 ) and an insulating layer forming step ( S13 ). Wherein, except for the electrical property testing step ( S12 ) and the insulating layer forming step ( S13 ), other components and features are the same as those of the first embodiment.

在此,电性检测步骤(S12)检测于电气测试步骤(S11)中有机发光元件1的短路程度;于隔绝层形成步骤(S13)中,当电性检测步骤(S12)中所检测的短路程度小于一定值,亦即短路处除以断路处的比例小于一定值时或是漏电流低于一定值时,于断路处形成一隔绝层2。因为施加定电压不定电流时,有缺陷的面板在正向电压下所耗用的电流会比正常电流值为高,而在负向电压下,有缺陷的面板则会产生较高的漏电流。而施加正向的定电流不定电压时,面板的亮度会比较低或不均匀,如果配合光电二极管(photodiode)转换成电压值或配合电荷耦合元件(Charge Coupled Device,CCD)撷取影像亮度值均匀度来比对,误差值会增加。Here, the electrical testing step (S12) detects the degree of short circuit of the organic light-emitting element 1 in the electrical testing step (S11); in the insulating layer forming step (S13), when the short circuit detected in the electrical testing step (S12) The degree is less than a certain value, that is, when the ratio of the short circuit divided by the open circuit is less than a certain value or the leakage current is lower than a certain value, an insulating layer 2 is formed at the open circuit. Because when a constant voltage and a constant current are applied, the current consumed by the defective panel will be higher than the normal current value under the positive voltage, and the defective panel will generate a higher leakage current under the negative voltage. When a positive constant current and variable voltage are applied, the brightness of the panel will be relatively low or uneven. If the photodiode (photodiode) is used to convert the voltage value or the charge coupled device (Charge Coupled Device, CCD) to capture the image brightness value is uniform For comparison, the error value will increase.

在本实施例的电性检测步骤(S12)中,当有机发光元件1的短路程度大于一定值,亦即利用漏电流平均值或亮度检测所得的误差结果大于可接受值时,该有机发光元件1将不继续进行隔绝层形成步骤(S13);而当有机发光元件1的短路程度小于一定值时,该有机发光元件1将继续进行隔绝层形成步骤(S13),在断路处形成一隔绝层2。当有机发光元件的短路程度大于可接受的范围时,亦即无修复的价值时,利用电性检测步骤(S12)能够减少隔绝层材料的损失,而只让需要修补的有机发光元件继续进行隔绝层形成步骤(S13)。In the electrical detection step (S12) of this embodiment, when the short-circuit degree of the organic light-emitting element 1 is greater than a certain value, that is, when the error result obtained by using the average value of leakage current or brightness detection is greater than an acceptable value, the organic light-emitting element 1. The step of forming the insulating layer (S13) will not be continued; and when the short circuit degree of the organic light emitting element 1 is less than a certain value, the organic light emitting element 1 will continue the step of forming the insulating layer (S13), forming an insulating layer at the disconnection 2. When the short-circuit degree of the organic light-emitting element is greater than the acceptable range, that is, when there is no repair value, the electrical detection step (S12) can reduce the loss of the isolation layer material, and only allow the organic light-emitting element that needs to be repaired to continue to be isolated Layer forming step (S13).

本发明所提供的有机发光元件像素缺陷修复方法利用一隔绝层形成方法,将有机发光元件中具有实质短路缺陷处加以修复,使得原本因实质短路而无法驱动的像素能够与无缺陷的相邻像素具有相等的发光能力,如效率、亮度以及色纯度等。与现有技术相比,本发明解决了因实质短路而造成的漏电流、耗电以及画质不佳的现象。再者,在封装步骤之前即测试出短路的现象并加以修补,而无须负担因为具有实质短路却无法修补且只能直接淘汰的有机发光元件面板成品在封装步骤之后的制造成本,直接提高了产品良率以及信赖度,进而降低了制造成本。The method for repairing pixel defects of an organic light-emitting element provided by the present invention utilizes a method for forming an insulating layer to repair the portion of the organic light-emitting element that has a substantial short-circuit defect, so that a pixel that cannot be driven due to a substantial short-circuit can be connected to a non-defective adjacent pixel. Have equal luminous capabilities, such as efficiency, brightness, and color purity. Compared with the prior art, the present invention solves the phenomenon of leakage current, power consumption and poor image quality caused by substantial short circuit. Furthermore, the short-circuit phenomenon is tested and repaired before the packaging step, and there is no need to bear the manufacturing cost of the finished organic light-emitting element panel after the packaging step that cannot be repaired because of a substantial short circuit and can only be directly eliminated, directly improving the product quality. Yield and reliability, thereby reducing manufacturing costs.

综上所陈,本发明无论就目的、手段及功效,均显示其不同于现有技术的特征,并具有显著的新颖性和创造性,实为「有机发光元件像素缺陷修复方法」的一大突破。所指出的是,上述诸多实施例仅为了便于说明而举例而已,本发明所主张的权利范围自应以权利要求范围所述为准,而非仅限于上述实施例。To sum up, the present invention is different from the prior art in terms of purpose, means and efficacy, and has remarkable novelty and creativity. . It should be pointed out that the above-mentioned embodiments are examples only for the convenience of description, and the scope of rights claimed by the present invention should be determined by the scope of the claims, rather than being limited to the above-mentioned embodiments.

Claims (14)

1.一种有机发光元件像素缺陷修复方法,用以修复具有实质短路现象的一有机发光元件,该有机发光元件于基板上包含一第一电极、一有机发光层以及一第二电极,其特征在于,该有机发光元件像素缺陷修复方法包含下列步骤:1. A method for repairing pixel defects of an organic light-emitting element, which is used to repair an organic light-emitting element with a substantial short circuit phenomenon. The organic light-emitting element includes a first electrode, an organic light-emitting layer, and a second electrode on a substrate, and its characteristics In that, the method for repairing pixel defects of organic light-emitting elements includes the following steps: 一电气测试步骤,于该有机发光元件的第一电极与第二电极间施以一电流或电压,以使该有机发光元件的实质短路处形成断路;以及An electrical testing step, applying a current or voltage between the first electrode and the second electrode of the organic light emitting element, so as to form an open circuit at the substantially short circuit of the organic light emitting element; and 一隔绝层形成步骤,于该有机发光元件的断路处形成一隔绝层。An isolation layer forming step is to form an isolation layer at the disconnection of the organic light-emitting element. 2.如权利要求1所述的有机发光元件像素缺陷修复方法,其特征在于,2. The method for repairing pixel defects of an organic light-emitting element according to claim 1, wherein: 该隔绝层形成步骤于一不含水的含氧气氛中氧化该第二电极。The insulating layer forming step oxidizes the second electrode in a water-free oxygen-containing atmosphere. 3.如权利要求1所述的有机发光元件像素缺陷修复方法,其特征在于,3. The method for repairing pixel defects of an organic light-emitting element according to claim 1, wherein: 该隔绝层局部渗入该有机发光层中。The insulating layer partially penetrates into the organic light-emitting layer. 4.如权利要求1所述的有机发光元件像素缺陷修复方法,其特征在于,4. The method for repairing pixel defects of an organic light-emitting element according to claim 1, wherein: 该隔绝层材料与该有机发光层材料相同。The insulating layer material is the same as the organic light emitting layer material. 5.如权利要求1所述的有机发光元件像素缺陷修复方法,其特征在于,5. The method for repairing pixel defects of an organic light-emitting element according to claim 1, wherein: 该隔绝层材料选自至少一具有高电阻的有机以及无机材料。The insulating layer material is selected from at least one organic and inorganic material with high resistance. 6.如权利要求1所述的有机发光元件像素缺陷修复方法,其特征在于,6. The method for repairing pixel defects of an organic light-emitting element according to claim 1, wherein: 该隔绝层材料为一具有高电阻的高分子材料。The insulating layer material is a polymer material with high resistance. 7.一种有机发光元件像素缺陷修复方法,用以修复具有实质短路现象的一有机发光元件,该有机发光元件于基板上包含一第一电极、一有机发光层以及一第二电极,其特征在于,该有机发光元件像素缺陷修复方法包含下列步骤:7. A method for repairing pixel defects of an organic light-emitting element, which is used to repair an organic light-emitting element with a substantial short circuit phenomenon. The organic light-emitting element includes a first electrode, an organic light-emitting layer, and a second electrode on the substrate, and its characteristics In that, the method for repairing pixel defects of organic light-emitting elements includes the following steps: 一电气测试步骤,利用该有机发光元件的第一电极与第二电极间施以一电流或电压,以使该有机发光元件的实质短路处形成断路;An electrical testing step, using a current or voltage applied between the first electrode and the second electrode of the organic light emitting element to form an open circuit at the substantially short circuit of the organic light emitting element; 一电性检测步骤,检测于该电气测试步骤中该有机发光元件的短路程度;以及an electrical testing step, detecting the degree of short circuit of the organic light-emitting element in the electrical testing step; and 一隔绝层形成步骤,于该电性检测步骤中所检测的短路程度小于一定值时,于该断路处形成一隔绝层。An isolation layer forming step is to form an isolation layer at the open circuit when the degree of short circuit detected in the electrical testing step is less than a certain value. 8.如权利要求7所述的有机发光元件像素缺陷修复方法,其特征在于,8. The method for repairing pixel defects of an organic light-emitting element according to claim 7, wherein: 该短路程度为短路处除以断路处的比例。The degree of short circuit is the ratio of short circuit divided by open circuit. 9.如权利要求7所述的有机发光元件像素缺陷修复方法,其特征在于,9. The method for repairing pixel defects of an organic light-emitting element according to claim 7, wherein: 该短路程度为漏电流程度。The degree of short circuit is the degree of leakage current. 10.如权利要求7所述的有机发光元件像素缺陷修复方法,其特征在于,10. The method for repairing pixel defects of an organic light-emitting element according to claim 7, wherein: 该隔绝层形成步骤于一不含水的含氧气氛中氧化该第二电极。The insulating layer forming step oxidizes the second electrode in a water-free oxygen-containing atmosphere. 11.如权利要求7所述的有机发光元件像素缺陷修复方法,其特征在于,11. The method for repairing pixel defects of an organic light-emitting element according to claim 7, wherein: 该隔绝层局部渗入该有机发光层中。The insulating layer partially penetrates into the organic light-emitting layer. 12.如权利要求7所述的有机发光元件像素缺陷修复方法,其特征在于,12. The method for repairing pixel defects of an organic light-emitting element according to claim 7, wherein: 该隔绝层材料与该有机发光层材料相同。The insulating layer material is the same as the organic light emitting layer material. 13.如权利要求7所述的有机发光元件像素缺陷修复方法,其特征在于,13. The method for repairing pixel defects of an organic light-emitting element according to claim 7, wherein: 该隔绝层材料选自至少一具有高电阻的有机以及无机材料。The insulating layer material is selected from at least one organic and inorganic material with high resistance. 14.如权利要求7所述的有机发光元件像素缺陷修复方法,其特征在于,14. The method for repairing pixel defects of an organic light-emitting element according to claim 7, wherein: 该隔绝层材料为一具有高电阻的高分子材料。The insulating layer material is a polymer material with high resistance.
CN 03141040 2003-06-16 2003-06-16 Method for repairing pixel defect of organic light-emitting element Pending CN1568102A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105988070A (en) * 2015-02-04 2016-10-05 上海和辉光电有限公司 Method of determining short circuit of negative and positive electrodes of organic light-emitting diode
CN107093679A (en) * 2017-04-28 2017-08-25 京东方科技集团股份有限公司 Repair method, organic electroluminescence device of organic electroluminescence device bright spot and preparation method thereof and display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105988070A (en) * 2015-02-04 2016-10-05 上海和辉光电有限公司 Method of determining short circuit of negative and positive electrodes of organic light-emitting diode
CN107093679A (en) * 2017-04-28 2017-08-25 京东方科技集团股份有限公司 Repair method, organic electroluminescence device of organic electroluminescence device bright spot and preparation method thereof and display device

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