Technical background
Current, an important development trend of direct-current switch power supply is to realize " light, thin, short, little " and high efficiency, and the core of direct-current switch power supply is power electronics DC/DC (DC-DC) switch converters.In various DC/DC switch converters, the input filter inductor is generally all arranged, output inductor device or energy-storage reactor, in order to transmit and store direct current power, generally all flow through bigger dc bias current in these inductors, cause producing in the iron core of these inductors bigger D.C. magnetic biasing, in order to prevent that D.C. magnetic biasing from causing the magnetic saturation of inductor iron core, in the iron circuit of these inductors, generally all open an air gap that is directly proportional with the size of dc bias current, the result makes that the utilance of inductor iron core is very low, inductance value reduces greatly, in order to remedy this loss of inductance value, people usually adopt the way (being unfavorable for very much reducing of inductor and Switching Power Supply volume) that increases inductor core volume or umber of turn, and the result makes the DC/DC switch converters be difficult to realize " light; thin; short; little "; In addition, because the operating frequency all very high (more than tens kHz) of these inductors, the inductor that makes these iron cores open air gap has produced bigger leakage electromagnetic field and high frequency radiation electromagnetic interference, leakage electromagnetic field causes the eddy current loss of inductor winding, makes the DC/DC switch converters be difficult to realize high efficiency; The high frequency radiation electromagnetic interference not only influences the operate as normal of converter circuit self, also can enter electrical network, pollutes electromagnetic environment, the normal operation that endangers other electronic equipments.Therefore, must take measures to eliminate D.C. magnetic biasing and air gap in these inductors.
In the past, people once added permanent magnetic material and eliminated D.C. magnetic biasing in iron circuit, but owing to cost, loss and the air gap of permanent magnet causes reasons such as inductance value reduction, made this way unworkable.
Another trial is to adopt special transformer configuration to reduce or eliminate D.C. magnetic biasing.As United States Patent (USP) " compensate for electronic the power inverter " (patent No.: US5,166,869) introduce in by " compensator transformer ", this compensator transformer is combined into a coupling inductance to input inductance and outputting inductance, direct current flux in its input inductance is output the direct current flux that inductance produces and eliminates, its major defect is to eliminate D.C. magnetic biasing under a certain fixing input/output voltage no-load voltage ratio, this no-load voltage ratio is determined by the securing loop ratio of these two windings, and can not under variable input/output voltage no-load voltage ratio, eliminate D.C. magnetic biasing, promptly can not all eliminate D.C. magnetic biasing when any duty ratio by the pulse-width modulation method.Note the different of coupling inductance and transformer device structure: in coupling inductance, when the transient current of input inductance flowed into end of the same name, the transient current of outputting inductance also flowed into end of the same name, and in AC transformer, output current is to flow out end of the same name.The major advantage of coupling inductance is to reduce the output ripple electric current, even can realize exporting zero ripple current.
U.S. Pat 6,400,579 (authorize day: 2002.10.9) be winding added in the Cuk converter in the middle of, input and output inductance winding in winding in the middle of this and the Cuk converter is integrated on the iron core, can when any duty ratio, eliminates the D.C. magnetic biasing in the iron core, make iron core need not open air gap, the inventor is called commutator transformer, the result reduces the volume and weight of converter, and efficient improves, and has high overload capacity (be nominal load current more than 20 times).The shortcoming of this integrated magnetics and circuit structure is the circuit complexity, self-turn-off device many (four), winding (causing the winding resistance loss) in the middle of additionally having added one, and only be applicable to this a kind of converter of Cuk converter, and can not be applicable to various DC/DC converters at present commonly used (as Buck, Boost, Buck/Boost, Zeta, Sepic, normal shock, instead swash or the like).
Description of drawings
Specify with embodiment below in conjunction with accompanying drawing.
Fig. 1 shows the DC/DC Switching Converter Topologies topological structure schematic diagram that adopts the non DC bias integrated magnetics.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment two of Fig. 2 diagrammatic sketch 1.
The embodiment three of Fig. 3 diagrammatic sketch 1 /DC Switching Converter Topologies topological structure schematic diagram.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment four of Fig. 4 diagrammatic sketch 1.
The embodiment five DC/DC Switching Converter Topologies topological structure schematic diagrames of Fig. 5 diagrammatic sketch 1.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment six of Fig. 6 diagrammatic sketch 1.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment seven of Fig. 7 diagrammatic sketch 1.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment eight of Fig. 8 diagrammatic sketch 1.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment nine of Fig. 9 diagrammatic sketch 1.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment ten of Figure 10 diagrammatic sketch 1.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment 11 of Figure 11 diagrammatic sketch 1.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment 12 of Figure 12 diagrammatic sketch 1.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment 13 of Figure 13 diagrammatic sketch 1.
The DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment 14 of Figure 14 diagrammatic sketch 1.
The structure of the non DC bias second integrated magnetics IM2 among the structure of the non DC bias first integrated magnetics IM1 and the embodiment four, six, eight among the embodiment one, two, three, four, six, eight, ten of Figure 15 diagrammatic sketch 1,12,13,14.
The structure of non DC bias the 3rd integrated magnetics IM3 among the embodiment five, seven, nine of Figure 16 diagrammatic sketch 1.
Among the figure, the 1-iron core; 2-iron core middle column; 3, first, second lateral column of 4-iron core; L1~L4-first~the 4th inductor; First, second gate-controlled switch device of S1, S2-; D1~D6-first~the 6th diode; C-output capacitance, first, second electric capacity of C1, C2-; IM1~IM6-first~the 6th integrated magnetics; The Vg-DC power supply; The R-load; First and second transformer of T1, T2-.
Embodiment
Embodiment one, with reference to accompanying drawing 1, a kind of DC/DC switch converters that adopts the non DC bias integrated magnetics, comprise non DC bias first an integrated magnetics IM1 who forms by the first inductor L1 and the second inductor L2, the first gate-controlled switch device S1 and the second gate-controlled switch device S2, the first diode D1 and the second diode D2, output capacitance C, DC power supply Vg, and load R.The characteristics of this reconfiguration device are to realize the two-way parallel connection, form a non DC bias first integrated magnetics IM1 by the first inductor L1 and the second inductor L2,1 end of the first integrated magnetics IM1 and 3 ends are end of the same name, 2 ends and 4 ends are end of the same name, above the electric current of a branch road flow into from 1 end, flow out from 2 ends, below the electric current of a branch road flow into from 4 ends, flow out from 3 ends; The first gate-controlled switch device S1 is identical with the switching frequency of the second gate-controlled switch device S2, and duty ratio is identical, and conducting differs constantly within one-period; The negative electrode of 1 termination, the first diode D1 of the first inductor L1 of the non DC bias first integrated magnetics IM1 and the source electrode of the first gate-controlled switch device S1 are (when the first gate-controlled switch device S1 adopts power MOFET, down together), the plus earth of the first diode D1, the drain electrode of the first gate-controlled switch device S1 connects the positive pole of DC power supply Vg, 3 ends of 2 terminations, the second inductor L2 of the first inductor L1, the end of the positive pole of output capacitance C and load R, the other end ground connection of the negative pole of output capacitance C and load R, the negative electrode of the 4 terminating diode D2 of the second inductor L2 of the first integrated magnetics IM1 and the source electrode of the second gate-controlled switch device S2 are (when the second gate-controlled switch device S2 adopts power MOFET, down together), the plus earth of the second diode D2, the drain electrode of the two the second gate-controlled switch device S2 connects the positive pole of DC power supply Vg, the minus earth of DC power supply Vg.The iron core 1 of the first integrated magnetics IM1 can adopt different shapes such as annular, U-shaped, plane U type, E shape, plane E shape, and core material can adopt various ferromagnetic materials such as ferrite, metal magnetic powder core, permalloy, amorphous, ultracrystallite; The first inductor L1 of the first integrated magnetics IM1 and the winding coil of the second inductor L2 can adopt round copper conductor, Copper Foil or printed circuit board (PCB) etc., generally with the number of turn of these two two coils and cross-sectional area of conductor long-pending be arranged to identical; The structure of the first integrated magnetics IM1 can adopt structure as shown in figure 15, is not only limited to this structure certainly, and it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.The first gate-controlled switch device S1 and the second gate-controlled switch device S2 can adopt various semiconductor switch devices such as power MOSFET, IGBT, GTR, GTO, SCR, IGCT, BCT, when the first diode D1 and second diode D2 employing gate-controlled switch device, also can adopt the semiconductor switch device of these kinds.
Embodiment two, with reference to accompanying drawing 2, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, comprise non DC bias first an integrated magnetics IM1 who forms by the first inductor L1 and the second inductor L2, the first gate-controlled switch device S1 and the second gate-controlled switch device S2, the first diode D1 and the second diode D2, output capacitance C, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize the two-way parallel connection, form a non DC bias first integrated magnetics IM1 by the first inductor L1 and the second inductor L2,1 end of the first integrated magnetics IM1 and 3 ends are end of the same name, 2 ends and 4 ends are end of the same name, above the electric current of a branch road flow into from 1 end, flow out from 2 ends, below the electric current of a branch road flow into from 4 ends, flow out from 3 ends; The first gate-controlled switch device S1 is identical with the switching frequency of the second gate-controlled switch device S2, and duty ratio is identical, and conducting differs constantly within one-period; 4 ends of 1 termination, the second inductor L2 of the first inductor L1 of the first integrated magnetics IM1 and the positive pole of DC power supply Vg, the anode of 2 terminations, the first diode D1 of the first inductor L1 and the drain electrode of the first gate-controlled switch device S1, the negative electrode of the first diode D1 connects the negative electrode of the second diode D2, the end of the positive pole of output capacitance C and load R, the source ground of first controllable switch S 1, the other end ground connection of the negative pole of output capacitance C and load R, the anode of 3 terminations, the second diode D2 of the second inductor L2 of the first integrated magnetics IM1 and the drain electrode of the second gate-controlled switch device S2, the source ground of the second gate-controlled switch device S2.The iron core that the first integrated magnetics IM1 adopts is with embodiment one; The winding coil that the first inductor L1 of the first integrated magnetics IM1 and the second inductor L2 adopt is with embodiment one; The structure of the first integrated magnetics IM1 can adopt structure as shown in figure 15, is not only limited to this structure certainly, and it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.The switching device that the first gate-controlled switch device S1 and the second gate-controlled switch device S2 and the first diode D1 and the second diode D2 adopt is with embodiment one.
Embodiment three, with reference to accompanying drawing 3, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, comprise non DC bias first an integrated magnetics IM1 who forms by the first inductor L1 and the second inductor L2, the first gate-controlled switch device S1 and the second gate-controlled switch device S2, the first diode D1 and the second diode D2, output capacitance C, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize the two-way parallel connection, form a non DC bias first integrated magnetics IM1 by the first inductor L1 and the second inductor L2,1 end of the first integrated magnetics IM1 and 3 ends are end of the same name, 2 ends and 4 ends are end of the same name, above the electric current of a branch road flow into from 1 end, flow out from 2 ends, below the electric current of a branch road flow into from 4 ends, flow out from 3 ends; The first gate-controlled switch device S1 is identical with the switching frequency of the second gate-controlled switch device S2, and duty ratio is identical, but conducting differs constantly within one-period; The source electrode of 1 termination, the first gate-controlled switch device S1 of the first inductor L1 of the first integrated magnetics IM1 and the negative electrode of the first diode D1, the drain electrode of the first gate-controlled switch device S1 connects the drain electrode of the second gate-controlled switch device S2 and the positive pole of DC power supply Vg, 3 ends of 2 terminations, the second inductor L2 of the first inductor L1 and the negative pole of DC power supply Vg, the source electrode of 4 terminations, the second gate-controlled switch device S2 of the second inductor L2 of the first integrated magnetics IM1 and the negative electrode of the second diode D2; The anode of the first diode D1 connects the anode of the second diode D2, the negative pole of output capacitance C and the end of load R, the negative pole of another termination DC power supply Vg of the positive pole of output capacitance C and load R.The iron core that the first integrated magnetics IM1 adopts is with embodiment one; The winding coil that the first inductor L1 of the first integrated magnetics IM1 and the second inductor L2 adopt is with embodiment one; The structure of the first integrated magnetics IM1 can adopt structure as shown in figure 15, is not only limited to this structure certainly, and it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.The switching device that the first gate-controlled switch device S1 and the first gate-controlled switch device S2 and the first diode D1 and the second diode D2 adopt is with embodiment one.
Embodiment four, with reference to accompanying drawing 4, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, comprise non DC bias first an integrated magnetics IM1 who forms by the input first inductor L1 and the second inductor L2, non DC bias second an integrated magnetics IM2 who forms by output the 3rd inductor L3 and the 4th inductor L4, the first gate-controlled switch device S1 and the second gate-controlled switch device S2, the first diode D1 and the second diode D2, output capacitance C, first capacitor C 1 and second capacitor C 2, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize the two-way parallel connection, form a non DC bias first integrated magnetics IM1 by the input first inductor L1 and the second inductor L2,1 end of the first integrated magnetics IM1 and 3 ends are end of the same name, 2 ends and 4 ends are end of the same name, above the input current of a branch road flow into from 1 end, flow out from 2 ends, below the input current of a branch road flow into from 4 ends, flow out from 3 ends; Form a non DC bias second integrated magnetics IM2 by output the 3rd inductor L3 and the 4th inductor L4,1 end of the second integrated magnetics IM2 and 3 ends are end of the same name, 2 ends of the second integrated magnetics IM2 and 4 ends are end of the same name, above the output current of a branch road flow into from 1 end of the second integrated magnetics IM2, flow out from 2 ends of the second integrated magnetics IM2, below the output current of a branch road flow into from 4 ends of the second integrated magnetics IM2, flow out from 3 ends of the second integrated magnetics IM2; The first gate-controlled switch device S1 is identical with the switching frequency of the second gate-controlled switch device S2, and duty ratio is identical, and conducting differs constantly within one-period; 4 ends of 1 termination, the second inductor L2 of the first inductor L1 of the first integrated magnetics IM1 and the positive pole of DC power supply Vg, the drain electrode of 2 terminations, the first gate-controlled switch device S1 of the first inductor L1 and the positive pole of first capacitor C 1, the source electrode of the first gate-controlled switch device S1 connects the negative pole of DC power supply Vg and the negative electrode of the first diode D1, the negative pole of first capacitor C 1 connects 1 end of the 3rd inductor L3 of the anode of the first diode D1 and the second integrated magnetics IM2, the drain electrode of 3 terminations, the second gate-controlled switch device S2 of the second inductor L2 of the first integrated magnetics IM1 and the positive pole of second capacitor C 2, the source electrode of the second gate-controlled switch device S2 connects the negative pole of DC power supply Vg and the negative electrode of the second diode D2, and the negative pole of second capacitor C 2 connects 4 ends of the 4th inductor L4 of the anode of the second diode D2 and the second integrated magnetics IM2; 3 ends, the negative pole of output capacitance C and the end of load R of 2 terminations the 4th inductor L4 of the 3rd inductor L3 of the second integrated magnetics IM2, the negative pole of another termination DC power supply Vg of the positive pole of output capacitance C and load R.The iron core 1 that the first integrated magnetics IM1 and the second integrated magnetics IM2 adopt is with embodiment one; The winding coil that the 3rd inductor L3 of the first inductor L1 of the first integrated magnetics IM1, the second inductor L2 and the second integrated magnetics IM2, the 4th inductor L4 adopt is with embodiment one, the structure of the first integrated magnetics IM1 and the second integrated magnetics IM2 can adopt structure as shown in figure 15, certainly be not only limited to this structure, it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.The switching device that the first gate-controlled switch device S1 and the second gate-controlled switch device S2 and 2 first utmost point pipe D1 and the second diode D2 adopt is with embodiment one.
Embodiment five, with reference to accompanying drawing 5, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, its connected mode is with embodiment four, and this converter and embodiment four unique difference structurally is the non DC bias first integrated magnetics IM1 and the second integrated magnetics IM2 further are integrated into a non DC bias the 3rd integrated magnetics IM3.The structure of non DC bias the 3rd integrated magnetics IM3 can adopt structure as shown in figure 16, is not only limited to this structure certainly, and it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.
Embodiment six, with reference to accompanying drawing 6, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, comprise non DC bias first an integrated magnetics IM1 who forms by the first inductor L1 and the second inductor L2, non DC bias second an integrated magnetics IM2 who forms by the 3rd inductor L3 and the 4th inductor L4, the first gate-controlled switch device S1 and the second gate-controlled switch device S2, the first diode D1 and the second diode D2, output capacitance C, first capacitor C 1 and second capacitor C 2, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize the two-way parallel connection, form a non DC bias first integrated magnetics IM1 by the first inductor L1 and the second inductor L2,1 end of the first integrated magnetics IM1 and 3 ends are end of the same name, 2 ends and 4 ends are end of the same name, the input current of the branch road in the left side flows into from 1 end, flow out from 2 ends, the input current of the branch road in the right side flows into from 4 ends, flows out from 3 ends; The 3rd inductor L3 and the 4th inductor L4 form non DC bias second an integrated magnetics IM2,1 end of the second integrated magnetics IM2 and 3 ends are end of the same name, 2 ends of the second integrated magnetics IM2 and 4 ends are end of the same name, above the output current of a branch road flow into from 1 end of the second integrated magnetics IM2, flow out from 2 ends of the second integrated magnetics IM2, below the output current of a branch road flow into from 4 ends of the second integrated magnetics IM2, flow out from 3 ends of the second integrated magnetics IM2; The first gate-controlled switch device S1 is identical with the switching frequency of the second gate-controlled switch magnetic spare S2, and duty ratio is identical, and conducting differs constantly within one-period; The source electrode of 1 termination, the first gate-controlled switch device S1 of the first inductor L1 of the first integrated magnetics IM1 and the positive pole of first capacitor C 1, the drain electrode of the first gate-controlled switch device S1 connects the drain electrode of the positive pole and the second gate-controlled switch device S2 of DC power supply Vg, the 2 end ground connection of the first inductor L1, the source electrode of 4 terminations, the second gate-controlled switch device S2 of the second inductor L2 of the first integrated magnetics IM1 and the positive pole of second capacitor C 2, the anode of 3 terminations, the first diode D1 of the second inductor L2 and ground, the negative pole of 1 termination, first capacitor C 1 of the 3rd inductor L3 of the second integrated magnetics IM2 and the negative electrode of the first diode D1,3 ends of 2 terminations the 4th inductor L4 of the 3rd inductor L3, the end of the positive pole of output capacitance C and load R, the other end ground connection of the negative pole of output capacitance C and load R, the negative pole of 4 terminations, second capacitor C 2 of the 4th inductor L4 and the negative electrode of the second diode D2, the plus earth of the second diode D2.The iron core 1 that the first integrated magnetics IM1 and the second integrated magnetics IM2 adopt is with embodiment one; The winding coil that the first integrated magnetics IM1 and the second integrated magnetics IM2 adopt is with embodiment one; The structure of the first integrated magnetics IM1 and the second integrated magnetics IM2 can adopt structure as shown in figure 15.The switching device that the first gate-controlled switch device S1 and the second gate-controlled switch device S2 and diode D1 and diode D2 adopt is with embodiment one.
Embodiment seven, with reference to accompanying drawing 7, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, its connected mode is with embodiment six, and this converter and embodiment six unique difference structurally is the non DC bias first integrated magnetics IM1 and the second integrated magnetics IM2 further are integrated into a non DC bias the 3rd integrated magnetics IM3.The structure of the 3rd integrated magnetics IM3 can adopt structure as shown in figure 16, is not only limited to this structure certainly.
Embodiment eight, with reference to accompanying drawing 8, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, comprise non DC bias first an integrated magnetics IM1 who forms by the first inductor L1 and the second inductor L2, non DC bias second an integrated magnetics IM2 who forms by the 3rd inductor L3 and the 4th inductor L4, the first gate-controlled switch device S1 and the second gate-controlled switch device S2, the first diode D1 and the second diode D2, output capacitance C, first capacitor C 1 and second capacitor C 2, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize the two-way parallel connection, form a non DC bias first integrated magnetics IM1 by the first inductor L1 and the second inductor L2,1 end of the first integrated magnetics IM1 and 3 ends are end of the same name, 2 ends of the first integrated magnetics IM1 and 4 ends are end of the same name, above the input current of a branch road flow into from 1 end of the first integrated magnetics IM1, flow out from 2 ends of the first integrated magnetics IM1, below the input current of a branch road flow into from 4 ends of the first integrated magnetics IM1, flow out from 3 ends of the first integrated magnetics IM1; Form a non DC bias second integrated magnetics IM2 by the 3rd inductor L3 and the 4th inductor L4,1 end of the second integrated magnetics IM2 and 3 ends are end of the same name, 2 ends of the second integrated magnetics IM2 and 4 ends are end of the same name, the output current of the branch road in the left side flows into from 1 end of the second integrated magnetics IM2, flow out from 2 ends of the second integrated magnetics IM2, the output current of the branch road in the right side flows into from 4 ends of the second integrated magnetics IM2, from the 3 ends outflow of the second integrated magnetics IM2; The first gate-controlled switch device S1 is identical with the switching frequency of the second gate-controlled switch device S2, and duty ratio is identical, and conducting differs constantly within one-period; 4 ends of 1 termination, the second inductor L2 of the first inductor L1 of the first integrated magnetics IM1 and the positive pole of DC power supply Vg, the drain electrode of 2 terminations, the first gate-controlled switch device S1 of the first inductor L1 and the positive pole of first capacitor C 1, the source ground of the first gate-controlled switch device S1, the drain electrode of 3 terminations, the second gate-controlled switch device S2 of the second inductance component L2 and the positive pole of second capacitor C 2, the source ground of the second gate-controlled switch device S2, the negative pole of 1 termination, first capacitor C 1 of the 3rd inductor L3 of the second integrated magnetics IM2 and the anode of the first diode D1, the 2 end ground connection of the 3rd inductor L3, the negative pole of 4 terminations, second capacitor C 2 of the 4th inductor L4 and the anode of the second diode D2, the 3 end ground connection of the 4th inductor L4, the negative electrode of the second diode D2 connects the negative electrode of the first diode D1, the end of the positive pole of output capacitance C and load R, the other end ground connection of the negative pole of output capacitance C and load R.The iron core 1 that the first integrated magnetics IM1 and the second integrated magnetics IM2 adopt is with embodiment one; The winding coil that the first integrated magnetics IM1 and the second integrated magnetics IM2 adopt is with embodiment one; The structure of the first integrated magnetics IM1 and the second integrated magnetics IM2 can adopt structure as shown in figure 15.The switching device that the first gate-controlled switch device S1 and the second gate-controlled switch device S2 and the first diode D1 and the second diode D2 adopt is with embodiment one.
Embodiment nine, with reference to accompanying drawing 9, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, its connected mode is with embodiment eight, and this converter and embodiment eight unique difference structurally is the non DC bias first integrated magnetics IM1 and the second integrated magnetics IM2 further are integrated into a non DC bias the 3rd integrated magnetics IM3.The structure of non DC bias the 3rd integrated magnetics IM3 can adopt structure as shown in figure 16, is not only limited to this structure certainly.
Embodiment ten, with reference to accompanying drawing 10, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, comprise non DC bias the 4th an integrated magnetics IM4 who forms by the first transformer T1 and the second transformer T2, non DC bias first an integrated magnetics IM1 who forms by the first inductor L1 and the second inductor L2, the first gate-controlled switch device S1 and the second gate-controlled switch device S2, first to fourth diode D1, D2, D3 and D4, output capacitance C, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize the two-way parallel connection, form a non DC bias the 4th integrated magnetics IM4 by the first transformer T1 and the second transformer T2,1 end of the 4th integrated magnetics IM4,3 ends, 5 ends and 7 ends are end of the same name, and 2 ends of the 4th integrated magnetics IM4,4 ends, 6 ends and 8 ends are end of the same name; Form a non DC bias first integrated magnetics IM1 by the first inductor L1 and the second inductor L2,1 end of the first integrated magnetics IM1 and 3 ends are end of the same name, 2 ends of the first integrated magnetics IM1 and 4 ends are end of the same name, above the output current of a branch road flow into from 1 end of the first integrated magnetics IM1, flow out from 2 ends of the first integrated magnetics IM1, below the output current of a branch road flow into from 4 ends of the first integrated magnetics IM1, flow out from 3 ends of the first integrated magnetics IM1; The first gate-controlled switch device S1 is identical with the switching frequency of the second gate-controlled switch device S2, and duty ratio is identical, and conducting differs constantly within one-period; The drain electrode of 1 termination, the first gate-controlled switch device S1 of the 4th integrated magnetics IM4, the source electrode of the first gate-controlled switch device S1 connects the source electrode of the second gate-controlled switch device S2, the negative pole of DC power supply Vg and ground, 2 terminations, 5 ends of the 4th integrated magnetics IM4 and the positive pole of DC power supply Vg, the drain electrode of 6 terminations, the second gate-controlled switch device S2 of the 4th integrated magnetics IM4, the anode of 3 terminations, the first diode D1 of the 4th integrated magnetics IM4,4 terminations, 7 ends of the 4th integrated magnetics IM4, the anode of the second diode D2, the anode of the 4th diode D4 and ground, the anode of 8 terminations the 3rd diode D3 of the 4th integrated magnetics IM4, the negative electrode of 1 termination, the first diode D1 of the first inductor L1 of the first integrated magnetics IM1 and the negative electrode of the second diode D2,2 terminations, 3 ends of the first integrated magnetics IM1, the end of the positive pole of output capacitance C and load R, the negative electrode of 4 terminations the 3rd diode D3 of the first integrated magnetics IM1 and the negative electrode of the 4th diode D4, the other end ground connection of the negative pole of output capacitance C and load R.The iron core 1 that the 4th integrated magnetics IM4 and the first integrated magnetics IM1 adopt is with embodiment one; The winding coil that the 4th integrated magnetics IM4 and the first integrated magnetics IM1 adopt is with embodiment one.The switching device that the first gate-controlled switch device S1 and the second gate-controlled switch device S2 and first to fourth diode D1, D2, D3 and D4 adopt is with embodiment one.The first inductor L1 and the second inductance component L2 can be not integrated yet in the present embodiment.
Embodiment 11, with reference to accompanying drawing 11, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, its connected mode is with embodiment ten, and this converter and embodiment ten unique difference structurally is the 4th integrated magnetics IM4 and the first integrated magnetics IM1 further are integrated into a non DC bias the 5th integrated magnetics IM5.
Embodiment 12, with reference to accompanying drawing 12, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, this converter and embodiment ten are basic identical, its structural difference is the 4th integrated magnetics IM4 among the embodiment 11 is removed a winding, form new non DC bias the 6th an integrated magnetics IM6, remove a gate-controlled switch device simultaneously.Also the 6th integrated magnetics IM6 and the first integrated magnetics IM1 further can be integrated into the magnetic spare of a non DC bias.
Embodiment 13, with reference to accompanying drawing 13, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, its connected mode is with embodiment ten, and this converter and embodiment ten difference structurally are non DC bias the 4th integrated magnetics IM4 is divided into two the independently first transformer T1 and the second transformer T2.
Embodiment 14, with reference to accompanying drawing 14, a kind of DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, its connected mode and embodiment ten are basic identical, this converter and embodiment ten difference structurally are that the 4th integrated magnetics IM4 is removed a winding forms the first transformer T1, input side at the first transformer T1 increases the 5th diode D5 and the 6th diode D6 simultaneously, and the first gate-controlled switch device S1 and the second gate-controlled switch device S2 be turn-on and turn-off simultaneously.Its connected mode is: the source electrode of 1 termination, the first gate-controlled switch device S1 of the first transformer T1 and the negative electrode of the 6th diode D6, the drain electrode of 2 terminations, the second gate-controlled switch device S2 of the first transformer T1 and the anode of the 5th diode D5, the drain electrode of the first gate-controlled switch device S1 and the negative electrode of the 5th diode D5 connect the positive pole of DC power supply Vg, and the source electrode of the second gate-controlled switch device S2 and the anode of the 6th diode D6 connect negative pole and the ground of DC power supply Vg; The anode of 3 terminations, the first diode D1 of the first transformer T1, the anode of 4 terminations, 5 ends of the first transformer T1, the anode of the second diode D2, the 4th diode D4 and ground, the anode of 6 terminations the 3rd diode D3 of the first transformer T1; The negative electrode of 1 termination, the first diode D1 of the first inductor L1 of the first integrated magnetics IM1 and the negative electrode of the second diode D2,3 ends, the positive pole of output capacitance C and the end of load R of 2 terminations, the second inductor L2 of the first inductor L1 of the first integrated magnetics IM1, the negative electrode of 4 terminations the 3rd diode D3 of the second inductor L2 of the first integrated magnetics IM1 and the negative electrode of the 4th diode D4; The other end ground connection of the negative pole of output capacitance C and load R.