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CN1331245C - 铟镓铝氮发光器件 - Google Patents

铟镓铝氮发光器件 Download PDF

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CN1331245C
CN1331245C CNB2005100303202A CN200510030320A CN1331245C CN 1331245 C CN1331245 C CN 1331245C CN B2005100303202 A CNB2005100303202 A CN B2005100303202A CN 200510030320 A CN200510030320 A CN 200510030320A CN 1331245 C CN1331245 C CN 1331245C
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CN1770485A (zh
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王立
江风益
方文卿
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Lattice Power Jiangxi Corp
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Priority to PCT/CN2006/002582 priority patent/WO2007036162A1/zh
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Abstract

本发明公开了一种铟镓铝氮发光器件，它包括衬底、半导体叠层、引线电极和电极引线，半导体叠层中至少包括一个N型层和一个P型层，特征是在半导体叠层中至少N型层或至少P型层具有一空缺，该空缺位于所述引线电极的引线的正下方；或包括一个具有主面和背面的导电衬底，依次在衬底主面向上层叠的粘接金属层、反射/欧姆金属层、半导体叠层、引线电极和电极引线，该半导体叠层中至少包含一个N型层和一个P型层，特征是所述的反射/欧姆金属层具有一空缺，且该空缺位于所述引线电极的引线的正下方。本发明的电极引线的下方半导体层不发光，因此可以消除因引线挡光而导致的光损失，提高发光器件的出光效率。

Description

铟镓铝氮发光器件
技术领域
本发明涉及一种半导体发光器件，尤其是涉及一种铟镓铝氮(InxGayAl1-x-yN，0＜＝x＜＝1，0＜＝y＜＝1)发光器件。
背景技术：
半导体发光器件是一类重要的半导体元器件，具有广泛的用途。例如半导体发光二极管，常用于指示灯，信号牌，交通信号灯等。近年来开发出来的铟镓铝氮发光二极管则进一步把发光二极管的应用拓宽到了照明领域。为了用半导体发光二极管实现通用照明的目标，必须提高现有发光二极管的效率。图1是一种典型的发光二极管结构示意图，图中1为衬底，2为半导体外延叠层，3为引线电极，4为电极引线，一般引线电极3与半导体外延叠层2之间要形成欧姆接触。另有一个电极在衬底背面。工作时，电流从电极引线4引入，经引线电极3注入半导体外延叠层2，在叠层中发光，然后经背面电极流出。半导体外延叠层2中的发光从上表面射出(向下发射的光经反射后也从上表面射出)。由图可看出，由于引线4的存在，将把位于其正下方的外延叠层的部分发光挡住而不能射出到器件外，因此将降低发光器件的出光效率。
发明内容：
本发明的目的在于提供一种铟镓铝氮发光器件，该器件可以避免或减小由于电极引线挡光而引起的出光损失，具有更高的出光效率。
本发明的目的是这样实现的：
本发明的一种半导体发光器件，包括：衬底，层叠于衬底之上的半导体叠层，该半导体叠层中至少包括一个N型层和一个P型层，层叠于所述半导体叠层之上的引线电极，所述引线电极的引线，特征是所述的半导体叠层中至少N型层或至少P型层具有一空缺，该空缺位于所述引线电极的引线的正下方。
本发明还的另一种半导体发光器件，包括：一个具有主面和背面的导电衬底，层叠于所述导电衬底主面之上的粘接金属层，层叠于所述粘接金属层之上的反射/欧姆金属层，层叠于所述反射/欧姆金属层之上的半导体叠层，该半导体叠层中至少包含一个N型层和一个P型层，层叠于所述半导体叠层之上的引线电极，所述引线电极的引线，特征是所述的反射/欧姆金属层具有一空缺，且该空缺位于所述引线电极的引线的正下方。
本发明的一种技术方案中所述空缺形成于半导体外延叠层中，将电极引线下方的半导体外延叠层去除后，不会有电流通过空缺，也没有发光，这样在注入同样大小的电流时，其余区域的电流密度就增加了，而空缺区域的发光不会被引线挡住，器件的出光效率就可以得到提高。空缺既可以穿透所有层，也可以只形成在N层或只形成在P层，其效果是为了不形成P-N结。为了防止短路或漏电，半导体外延叠层被去除而留下的空缺可以用绝缘材料填充。所述绝缘材料可以是二氧化硅、氮化硅或三氧化二铝。优选是氮化硅。
本发明的另一个技术方案中，空缺可以形成于反射/欧姆金属层中。在这一方案中半导体外延叠层与衬底之间具有金属粘接层和反射/欧姆金属层。由于半导体外延层很薄，一般只有几微米，电流在半导体外延层内横向扩展较为困难，因此电流的横向扩展受反射/欧姆金属层控制，在本发明中电极引线正下方对应的反射/欧姆金属层被去除而形成一空缺，由于该区域没有形成欧姆接触，也就只有很小的电流通过，因此基本没有发光。电流基本全部从不会被引线挡住出光的区域流过而发光，因这些区域的电流密度被加大，器件的出光效率增加，反射/欧姆金属层的空缺中也可以填充一种绝缘材料或导电但不与所述半导体叠层形成欧姆接触的材料，而进一步阻止电流通过。所述绝缘材料可以是二氧化硅、氮化硅或三氧化二铝。优选是氮化硅。导电材料可以是金、铬等。
其中所述半导体叠层或反射/欧姆金属层的空缺的面积大小可以依据实际操作情况来具体设定，优选空缺面积是引线电极的引线在衬底上投影的面积的0.5倍到2倍。
所述半导体叠层可以是铟镓铝氮(InxGayAl1-x-yN，0＜＝x＜＝1，0＜＝y＜＝1)材料、铟镓铝磷(InxGayAl1-x-yP，0＜＝x＜＝1，0＜＝y＜＝1)材料，以及铟镓铝砷(InxGayAl1-x-yAs，0＜＝x＜＝1，0＜＝y＜＝1)等形成，优选半导体叠层是由铟镓铝氮(InxGayAl1-x-yN，0＜＝x＜＝1，0＜＝y＜＝1)材料形成。
所述导电衬底是常用的半导体材料和金属材料，优选是硅衬底，砷化镓，蓝宝石。
因此本发明具有可以避免或减小由于电极引线挡光而引起的出光损失，具有更高的出光效率的优点。
附图说明：
图1是一种传统的发光二极管结构示意图。1为衬底，2为半导体外延叠层，3为P型电极，4为P型电极引线。
图2是本发明实施例1的发光二极管结构示意图。1为衬底，2为半导体外延叠层，3为P型电极，4为P型电极引线，5为半导体外延叠层中的空缺。其中空缺5位于P型电极引线4的正下方，穿透所有外延层，空缺中填有二氧化硅。
图3是本发明实施例2的发光二极管结构示意图。1为衬底，2为半导体外延叠层，3为P型电极，4为P型电极引线，5为半导体外延叠层中的空缺，6为N型电极。其中空缺5位于电极引线4的正下方只穿透P型层和发光层，空缺中填有氮化硅。
图4是本发明实施例3的发光二极管结构示意图。1为衬底，2为半导体外延叠层，3为N型电极，4为N型电极引线，6为反射/欧姆金属层，7为金属粘接层。
图5是图4中反射/欧姆金属层6的平面视图。图中5为反射/欧姆金属层中的空缺。
具体实施方式：
下面用3个实施例对本发明的方法进行进一步的说明。
实施例1：
参照图2。把一个砷化镓衬底1清洗干净，放入化学气相沉积设备中。依照一种文献公开的方法，沉积铟镓铝磷叠层2结构，该结构包括N型层，多量子阱发光层和P型层。外延层沉积完成后，通过ICP刻蚀，把图2中5所示的区域刻除以形成一空缺，该空缺穿过所有外延层。使用磁控溅射和光刻工艺在空缺中形成二氧化硅填充层。然后在P型层上形成一个P型欧姆电极3，在衬底背面形成一个N型欧姆电极。把外延片切割形成独立的芯片。把芯片固定在封装支架中，在空缺5的正上方引一根金线即P型电极引线4到P型电极上。最后用环氧树脂封装成型。
实施例2：
参照图3。把一个蓝宝石衬底1清洗干净，放入化学气相沉积设备中。依照一种文献公开的方法，沉积铟镓铝氮叠层2结构，该结构包括N型层，多量子阱发光层和P型层。外延层沉积完成后，通过ICP刻蚀，把图3中5所示的区域刻除以形成一空缺，该空缺穿过P型层。同时把正方形芯片的一个角刻除一扇形区域至暴露N型层。使用磁控溅射和光刻工艺在空缺中形成二氧化硅填充层。然后在P型层上形成一个P型欧姆电极3，在暴露的N型层上形成一个N型欧姆电极。把外延片切割形成独立的芯片。把芯片固定在封装支架中，在空缺5的正上方引一根金线即P型电极引线4到P型电极3上，从N型层暴露层上方引另一根金线到N型电极上。最后用环氧树脂封装成型。
实施例3：
参照图4，图5。把一个硅生长衬底1清洗干净，放入化学气相沉积设备中。依照一种文献公开的方法，沉积铟镓铝氮叠层2结构，该结构包括N型层，多量子阱发光层和P型层。外延层沉积完成后，在P型层上蒸发一铂反射/欧姆层6。通过光刻和腐蚀，把图5中5所示的区域的铂刻除以形成空缺。然后在铂层上蒸发一金属粘接层7。把外延片粘接到另外一个硅衬底然后把硅生长衬底腐蚀去除。在P型层上形成一个P型电极，在硅衬底背面形成一个N型电极3。把外延片切割形成独立的芯片。把芯片固定在封装支架中，在空缺5的正上方焊上如图4中4所示的十字型焊条引线即N型电极引线4。最后用环氧树脂封装成型。

Claims (10)

1、一种铟镓铝氮发光器件，包括
-衬底；
-层叠于衬底之上的半导体叠层，该半导体叠层中至少包括一个N型层和一个P型层；
-层叠于所述半导体叠层之上的引线电极；
-所述引线电极的引线；
其特征在于：其中所述的半导体叠层中至少N型层或至少P型层具有一空缺，该空缺位于所述引线电极的引线的正下方。
2、如权利要求1所述的铟镓铝氮发光器件，其特征在于：所述半导体叠层的空缺的面积是引线电极的引线在衬底上投影的面积的0.5倍到2倍。
3、如权利要求1所述的铟镓铝氮发光器件，其特征在于：所述的空缺中填有一种绝缘材料。
4、如权利要求1所述的铟镓铝氮发光器件，其特征在于：所述的半导体叠层由铟镓铝氮材料形成。
5、如权利要求1所述的铟镓铝氮发光器件，其特征在于：所述的衬底为硅衬底。
6、一种铟镓铝氮发光器件，包括：
-一个具有主面和背面的导电衬底；
-层叠于所述导电衬底主面之上的粘接金属层；
-层叠于所述粘接金属层之上的反射/欧姆金属层；
-层叠于所述反射/欧姆金属层之上的半导体叠层，该半导体叠层中至少包含一个N型层和一个P型层；
-层叠于所述半导体叠层之上的引线电极；
-所述引线电极的引线；
其特征在于：其中所述的反射/欧姆金属层具有一空缺，且该空缺位于所述引线电极的引线的正下方。
7、如权利要求6所述的铟镓铝氮发光器件，其特征在于：所述反射/欧姆金属层的空缺的面积是引线电极的引线在导电衬底上投影的面积的0.5倍到2倍。
8、如权利要求6所述的铟镓铝氮发光器件，其特征在于：所述的空缺中填有一种绝缘材料或导电但不与所述半导体叠层形成欧姆接触的材料。
9、如权利要求6所述的铟镓铝氮发光器件，其特征在于：所述的半导体叠层由铟镓铝氮材料形成。
10、如权利要求6所述的铟镓铝氮发光器件，其特征在于：所述的导电衬底为硅衬底。
CNB2005100303202A 2005-09-30 2005-09-30 铟镓铝氮发光器件 Expired - Fee Related CN1331245C (zh)

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EP06791168A EP1930956A1 (en) 2005-09-30 2006-09-29 Semiconductor light-emitting device
KR1020087006916A KR20080049749A (ko) 2005-09-30 2006-09-29 반도체 발광 장치
PCT/CN2006/002582 WO2007036162A1 (en) 2005-09-30 2006-09-29 Semiconductor light-emitting device
JP2008532570A JP2009510728A (ja) 2005-09-30 2006-09-29 半導体発光デバイス
US12/067,767 US7692205B2 (en) 2005-09-30 2006-09-29 Semiconductor light-emitting device

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WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
KR20090131351A (ko) * 2008-06-18 2009-12-29 주식회사 에피밸리 반도체 발광소자
CN110265515B (zh) * 2019-06-20 2021-01-29 合肥彩虹蓝光科技有限公司 一种发光二极管芯片及其制造方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144321A (ja) * 1999-11-04 2001-05-25 Shurai Kagi Kofun Yugenkoshi 発光素子及びその製造方法
CN1346154A (zh) * 2000-09-28 2002-04-24 国联光电科技股份有限公司 高亮度发光装置
US6420732B1 (en) * 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
JP2003209282A (ja) * 2002-01-15 2003-07-25 Sharp Corp 半導体発光素子及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267715A (ja) * 1992-03-24 1993-10-15 Toshiba Corp 半導体発光装置
US5828684A (en) * 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
JPH09205225A (ja) * 1996-03-25 1997-08-05 Rohm Co Ltd 発光半導体装置の製造方法
JPH114020A (ja) * 1997-04-15 1999-01-06 Toshiba Corp 半導体発光素子及びその製造方法、並びに半導体発光装置
US6597713B2 (en) * 1998-07-22 2003-07-22 Canon Kabushiki Kaisha Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
TW456058B (en) * 2000-08-10 2001-09-21 United Epitaxy Co Ltd Light emitting diode and the manufacturing method thereof
JP4004378B2 (ja) * 2002-10-24 2007-11-07 ローム株式会社 半導体発光素子
KR100495215B1 (ko) * 2002-12-27 2005-06-14 삼성전기주식회사 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법
JP4254266B2 (ja) * 2003-02-20 2009-04-15 豊田合成株式会社 発光装置及び発光装置の製造方法
JP4411871B2 (ja) * 2003-06-17 2010-02-10 日亜化学工業株式会社 窒化物半導体発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144321A (ja) * 1999-11-04 2001-05-25 Shurai Kagi Kofun Yugenkoshi 発光素子及びその製造方法
US6420732B1 (en) * 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
CN1346154A (zh) * 2000-09-28 2002-04-24 国联光电科技股份有限公司 高亮度发光装置
JP2003209282A (ja) * 2002-01-15 2003-07-25 Sharp Corp 半導体発光素子及びその製造方法

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JP2009510728A (ja) 2009-03-12
US20080246048A1 (en) 2008-10-09

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