CN1343000A

CN1343000A - Electron cyclotron resonance deashing apparatus for processing glass substrates or wafers

Info

Publication number: CN1343000A
Application number: CN01124820A
Authority: CN
Inventors: 朴庸硕; 裵禹庆
Original assignee: DMS Co Ltd
Current assignee: DMS Co Ltd
Priority date: 2000-06-29
Filing date: 2001-06-29
Publication date: 2002-04-03
Also published as: KR20010044059A; JP2002025993A; TW495823B

Abstract

An ECR ash removing apparatus includes an ash removing chamber having an insertion port of a glass substrate or wafer, an exhaust port of an ash removing gas, and a gas supply part provided at one side thereof, a lower electrode in which the glass substrate or wafer is mounted on the lower electrode, wherein a photoresist is applied to the glass substrate or wafer, an RF power supply for supplying power to the lower electrode, an ECR source including a microwave generating part, a waveguide, a plasma discharge chamber, and a magnetic coil for forming plasma in the ash removing chamber, a power supply for supplying power to the ECR source, and a scanning unit for driving the ECR source to move forward and backward or leftward and rightward.

Description

Be used to handle the electronic cyclotron resonance dusting device of glass substrate or wafer

Technical field

The present invention relates to a kind of device of producing semiconductor device, especially, relate to a kind of electron cyclotron resonace (hereinafter being called ECR) ash handling equipment that is used to handle glass substrate or wafer.

Background technology

The conventional ion source uses electron cyclotron resonace as the method that produces gaseous plasma, because it can form the plasma of big electric current on large tracts of land, ion source develops out in western countries late period nineteen sixties, recently, ion source is applied in the semiconductor machining basically.

Especially, if use ecr plasma in the ash disposal of semiconductor machining is handled, such advantage is arranged so: because the ion energy distribution under the lower temperature, the ash disposal destructiveness on the semiconductor chip is little; Since the generation of high-density plasma, ash disposal speed height; And according to the generation of plasma under the high vacuum, because long mean free path ion has the advantage that height or the like is decomposed in ash disposal.

On the other hand, in order to form the pattern of functional film, in semi-conductive production process, photoresist (photo resist) is applied on the surface of wafer, perhaps in the production process of LCD, photoresist is applied on the surface of glass substrate, and behind film forming pattern, the photoresist of staying on wafer surface or the glass substrate surface is removed.Recently, for by using ecr plasma to remove the method and apparatus of the photoresist on wafer or the liquid crystal display surface, carried out positive research.

Fig. 1 shows the ECR ash handling equipment of traditional glass of liquid crystal display substrate.

The ECR ash handling equipment of traditional glass of liquid crystal display substrate comprises: dedusting chamber 10, and the insertion opening with glass substrate is arranged on the one side; Exhaust outlet 19 and air supply part 15; Bottom electrode 17, in dedusting chamber 10, glass substrate 13 is installed on the bottom electrode; ECR source 23 is used to form plasma; With power supply 21, be used for providing power supply to ECR source 23.

Now, the ash disposal process will be described,, remove and be applied to glass substrate 13 lip-deep photoresists 11 by using traditional ECR ash handling equipment.

At first, glass substrate 13 is inserted in the dedusting chamber 10 by transport sector such as transfer arm, and is installed on the bottom electrode 17, and wherein photoresist 11 is applied on the glass substrate surface.

Then, when the installation of glass substrate 13, transport sector is pulled out from dedusting chamber.Then, removing ash gas provides by air supply part 19, and is evenly distributed on the whole surface of dedusting chamber 10, and wherein air supply part 19 is arranged on outside the dedusting chamber 10.

Then, when power supply 21 closes a floodgate,, in microwave production part 23a, produce microwave, and microwave is transferred among the plasma discharge chamber 23c by waveguide 23b by the magnetron of preset frequency and power output.

Plasma discharge chamber 23c is by electron cyclotron resonace, and the ash disposal gas discharge with introducing in the arc chamber produces plasma.As a result, be applied to glass substrate 13 lip-deep photoresists 11 and be evaporated, and be discharged to outside the chamber 10 by exhaust outlet 19.

In the accompanying drawings, the plasma streamline that produces among the Reference numeral 25 expression plasma discharge chamber 23c.

Recently, along with the expansion of LCD, more need the expansion of glass substrate area.Yet, such problem is arranged, promptly in above-mentioned traditional ECR ash handling equipment, the area of illuminated plasma is little, so be difficult to be applied to have the situation of big substrate.

Summary of the invention

The present invention in order to solve top problem, like this, the objective of the invention is just: provide a kind of ash handling equipment that can dry ecthing, by fixing large-area glass substrate or wafer and drive before and after the little ECR source or move left and right; Or by linear array a plurality of little ECR source and drive large-area glass substrate or wafer before and after or move left and right, carry out dry ecthing.

To achieve these goals, ash handling equipment according to the present invention comprises: dedusting chamber, the one side be provided with glass substrate (wafer) the insertion mouth, remove the exhaust outlet and the air supply part of ash gas; Bottom electrode is equipped with glass substrate or wafer on the bottom electrode in described dedusting chamber, wherein photoresist is applied on glass substrate or the wafer; The RF power supply is used for providing power supply to described bottom electrode; The ECR source comprises microwave production part, waveguide, plasma discharge chamber and magnetic coil, is used for forming plasma in described dedusting chamber; Power supply is used for providing power supply to described ECR source; And scanning element, be used to drive before and after described ECR source or described large-area glass/wafer or move left and right.

Description of drawings

Embodiments of the invention describe with reference to the accompanying drawings, wherein:

Fig. 1 shows the traditional ECR ash handling equipment that is used for the glass of liquid crystal display substrate;

Fig. 2 show be used for the glass of liquid crystal display substrate according to ECR ash handling equipment of the present invention;

Fig. 3 shows the configuration of the waveguide in ECR source according to the present invention.

Embodiment

Specify the present invention now with reference to accompanying drawing.

Hereinafter in the explanation, produce wafer in the semiconductor device be considered to the production LCD in the identical thing of glass substrate, the ECR ash handling equipment that is used to handle wafer so no longer is described.

Fig. 2 illustrates in general the ECR ash handling equipment that is used for the glass of liquid crystal display substrate according to of the present invention.As shown in Figure 2, ECR ash handling equipment of the present invention comprises: dedusting chamber 100, the one side be provided with glass substrate insertion mouth (not shown), remove the exhaust outlet 119 and the air supply part 115 of ash gas; Bottom electrode 117 in dedusting chamber 100, is equipped with glass substrate 113 on the bottom electrode 117, wherein photoresist 111 is applied on the glass substrate; RF power supply (not shown) is used for providing power supply to bottom electrode 117; ECR source 123 is used for forming plasma in dedusting chamber 100; Power supply 121 is used for providing power supply to ECR source 123; With scanning element 125, be used to drive 123 front and back, ECR source or move left and right.

ECR source 123 comprises microwave production part 123a, waveguide 123b, plasma discharge chamber 123c and magnetic coil (not shown) or the like, and chamber 100 is outside equipped with unshowned air supply system, vacuum pumping system, Measurement and Control System or the like.

In microwave production part 123a, the magnetron with preset frequency and power output is connected on the used power supply, and the microwave that produces is transferred among the plasma discharge chamber 123c by waveguide 123b.

Plasma discharge chamber 123c is surrounded by a plurality of independently magnetic coils, and with microwave production part 123a in the microwave interactive that produces, the ash disposal gas discharge that makes it will introduce arc chamber by electron cyclotron resonace produces plasma.As a result, be applied to glass substrate 13 lip-deep photoresists 11 and be evaporated, and be discharged into outside the dirt pocket 10 by exhaust outlet 19.

Equally, be used for power supply is provided to the RF power supply of bottom electrode 117, compensation plasma body streamline departing from glass substrate 113 vertical direction.

Below the ash disposal process will be described, the ash handling equipment that wherein is applied to glass substrate 113 lip-deep photoresist 113 the application of the invention is removed.

At first, glass substrate 113 is inserted in the dedusting chamber 100 by transport sector such as transfer arm, and is installed on the bottom electrode 117, and wherein photoresist 111 is applied on glass substrate 113 surfaces.

Then, when the installation of glass substrate 113, transport sector is pulled out from dedusting chamber 100.Then, except that the air supply part of ash gas from air supply system provides, and be evenly distributed on the whole surface of dedusting chamber 100, wherein air supply system is arranged on outside the dedusting chamber 100.

Then, when power supply 121 closed a floodgate, by having the magnetron of preset frequency and power output, microwave production part 123a produced microwave, and microwave is transferred among the 123c of plasma discharge chamber by waveguide 123b.

In plasma discharge chamber 123c, the ash gas that removes that enters in the arc chamber discharges by electron cyclotron resonace, produces plasma.As a result, being applied to glass substrate 113 lip-deep photoresists is evaporated and is discharged to outside the dedusting chamber 100.

The plasma streamline that produces among the Reference numeral 127 expression plasma discharge chamber 123c.

Equally, air supply part 115 is provided by a side outer wall of dedusting chamber 100, and has the shape of seam.

In the above-described embodiments, large-area glass substrate is fixed, and little ECR source is driven front and back or move left and right.Yet, although do not illustrate in the drawings, according to another embodiment of the invention, a plurality of little ECR source linear array, and large-area glass substrate is driven front and back or move left and right.Thus, this embodiment has the effect identical with the above embodiment of the present invention.

Fig. 3 illustrates in general the configuration of the waveguide in ECR source in accordance with another embodiment of the present invention.In this embodiment of the present invention, be provided with a plurality of ECR source, like this, waveguide 123b is linear array as shown in Figure 3.Waveguide 123b is arranged in delegation, two row or multirows more, improves its uniformity.In Fig. 3, the direction that arrow indication substrate moves.

Equally, can have various structures,, equally also can have parallelogram or the ellipse shown in Fig. 3 b shown in Fig. 3 a as rectangle, circle or the like according to waveguide structure of the present invention.

As mentioned above, the preferred embodiments of the present invention relate to the ECR ash handling equipment that is used for treatment fluid crystal display glass substrate, but the present invention can be as the ECR ash handling equipment of process semiconductor wafers.Thus, except ash disposal process object difference, structure, function and the advantage that causes are equal to each other together, so the ash handling equipment that is used to handle wafer will no longer be described.

According to ECR ash handling equipment of the present invention, large-area glass substrate or wafer are fixed, and little ECR source be driven before and after or move left and right, perhaps a plurality of little ECR source linear array, and large-area glass substrate or wafer be driven before and after or move left and right.Can provide the ash handling equipment that carries out dry ecthing with high efficiency thus.

Claims

1. A deashing device, comprising:

Ash removal chamber, on one side of which is provided with an insertion port for the object to be processed, an exhaust port for the ash removal gas, and an air supply part;

a lower electrode, in the deashing chamber, a processing object is installed on the lower electrode, wherein a photoresist material is applied to the processing object;

RF power supply for providing power to the lower electrode;

an ECR source comprising microwave generating components, waveguides, plasma discharge chambers and magnetic coils for forming plasma in said ash removal chamber;

a power supply for providing power to the ECR source; and

The scanning unit is used to drive the ECR source to move back and forth or left and right.

2. A deashing device, comprising:

a lower electrode, on which an object to be processed is installed on the lower electrode in the deashing chamber, wherein a photoresist material is applied to the object to be processed;

RF power supply for providing power to the lower electrode;

a plurality of linearly arranged ECR sources, each ECR source comprising microwave generating components, a waveguide, a plasma discharge chamber and a magnetic coil for forming a plasma in said ash removal chamber;

a power supply for providing power to each of said ECR sources; and

The scanning unit is used to drive the processing object to move back and forth or left and right.

3. The ash removal device according to claim 2, wherein the shape of the waveguide of the ECR source is one of rectangle, parallelogram, circle and ellipse, and these waveguides are arranged in a row, Two or more lines.

4. The ash removal device according to claim 1, characterized in that the processing object is a glass substrate.

5. The dust removal device according to claim 1, wherein the processing object is a wafer.