CN115547803A - Atomic layer etching reaction device and etching method - Google Patents

Abstract

The embodiment of the invention discloses an atomic layer etching reaction device, wherein the atomic layer etching reaction device comprises: the vacuum mechanism provides a place for the atomic layer etching reaction; the ion source is communicated with the vacuum mechanism and is used for generating an ion field in the vacuum mechanism to form certain ion beam flow distribution; the platform assembly is arranged in the vacuum mechanism and is used for bearing the substrate; wherein, under the drive of the platform assembly, the substrate is etched according to the preset pattern by changing the position according to the preset path in the ion field. According to the invention, the energy of ions or neutral particles on the surface of the substrate can be accurately regulated and controlled, and the atomic layer etching of the substrate can be realized. The invention also discloses an etching method.

Description

Atomic layer etching reaction device and etching method

technical field

The invention relates to the technical field of atomic layer etching, in particular to an atomic layer etching reaction device and an etching method.

Background technique

Atomic Layer Etching (ALE) is an advanced technique that enables precise control of the amount of material removed. One of the keys to realizing this technology is to divide the etching process into two steps: modification (step A) and removal (step B). The first step (step A) modifies the surface layer so that it can be easily removed in the second step (step B). Only a thin layer of material is removed with each cycle, and cycles can be repeated until the desired depth is achieved.

For the atomic layer etching reaction, it is necessary to precisely control the energy of the ion beam or neutral particle beam on the substrate surface. The existing conventional energy control method is usually to adjust the ion generator itself (such as adjusting power, air pressure, etc.), but the above-mentioned method will be limited by the fixed distance between the ion beam or neutral particle beam generating device and the substrate. Therefore, how to accurately control the energy distribution requirements of the ion beam or neutral particle beam moving to the substrate surface has become an urgent problem to be solved.

Contents of the invention

Embodiments of the present invention provide an atomic layer etching reaction device and an etching method, which can accurately control the energy of ions or neutral particles on the surface of a substrate, and realize atomic layer etching of the substrate.

In order to solve the above technical problems, the embodiments of the present invention disclose the following technical solutions:

In one aspect, an atomic layer etching reaction device is provided, including: a vacuum mechanism that provides a place for the atomic layer etching reaction;

an ion source, communicated with the vacuum mechanism, and the ion source is used to generate an ion field inside the vacuum mechanism;

a platform assembly, the platform assembly is located inside the vacuum mechanism and is used to carry the substrate;

Wherein, driven by the platform assembly, the substrate can change its position in the ion field according to a preset path so as to be etched according to a preset pattern.

In addition to one or more features disclosed above, or as an alternative, the platform assembly includes a multi-axis parallel arm platform assembly, a substrate tray and a baffle, and the multi-axis parallel arm platform assembly is arranged on the vacuum mechanism Inside, the multi-axis parallel arm platform assembly is in transmission connection with the substrate tray, the substrate tray is used to carry the substrate, and the baffle cover is arranged on the multi-axis parallel arm platform assembly.

In addition to one or more features disclosed above, or as an alternative, the multi-axis parallel arm platform assembly is a six-axis parallel arm platform assembly.

In addition to one or more features disclosed above, or as an alternative, the multi-axis parallel arm platform assembly includes a base, a moving platform and several linear drive devices, the base is arranged inside the vacuum mechanism, and the moving platform Connected to the substrate tray, the two ends of each linear drive device are respectively connected to the base and the motion platform in multi-directional rotation;

The baffle includes an upper baffle and a lower baffle, and the upper baffle and the lower baffle cover are arranged between the base and the moving platform.

In addition to one or more features disclosed above, or as an alternative, several linear drive devices are in groups of two, and one end of the two linear drive devices in each group is rotated and arranged on the first transmission device. At the same corner of the base, the other ends of the two linear drive devices in each group are rotated through the second transmission device at two adjacent top corners of the triangular seat on the motion platform.

In addition to, or as an alternative to, one or more of the features disclosed above, the first transmission and the second transmission each comprise a biaxial hinge.

In addition to, or as an alternative to, one or more of the features disclosed above, each of the linear drives is in an inclined state when the motion platform is in an initially horizontal state.

In addition to, or as an alternative to, one or more of the features disclosed above, an anti-corrosion material is provided on the inner wall of the vacuum mechanism.

In addition to one or more features disclosed above, or as an alternative, the ion source is at least one of an inductively coupled ion source, a capacitively coupled ion source, a radio frequency ion source, a Hall ion source and a Kaufman ion source .

On the other hand, an etching method is further disclosed, using any one of the above-mentioned atomic layer etching reaction devices, including the following steps: S100, feeding an etching gas into the vacuum mechanism, and turning on the ion source , excite the etching gas to form an ion field inside the vacuum mechanism, and turn on the platform assembly, and the platform assembly drives the substrate to change its position in the ion field according to a preset path so that the substrate etched in a preset pattern.

The atomic layer etching reaction device in the above technical solution has the following advantages or beneficial effects: the multi-axis parallel arm platform assembly of the technical solution is connected to the substrate tray and can drive the substrate tray to perform translational, rotational or tilting movements, so that the substrate It is no longer necessary to stick to the limitation of the fixed distance between the ion beam or neutral particle beam generating device and the substrate in the prior art, and then according to the energy distribution area of the ion field and combined with the energy that needs to be precisely regulated by the substrate In this category, the substrate tray can freely appear in different positions of the ion field at different times, so as to realize the optimal selection of the appropriate ion beam energy distribution area for the substrate, and then realize the precise atomic layer etching of the substrate.

Description of drawings

The technical solutions and other beneficial effects of the present invention will be apparent through the detailed description of specific embodiments of the present invention in conjunction with the accompanying drawings.

Fig. 1 is a flow chart of the reaction process of an atomic layer etching reaction in the prior art provided according to an embodiment of the present invention;

2 is a structural diagram of an atomic layer etching reaction device according to an embodiment of the present invention;

3 is a cross-sectional view of an atomic layer etching reaction device provided according to an embodiment of the present invention;

Fig. 4 is a structural diagram of a platform assembly provided according to an embodiment of the present invention;

Fig. 5 is a cross-sectional view of a platform assembly provided according to an embodiment of the present invention;

Fig. 6 is a structural diagram of a multi-axis parallel arm platform assembly provided according to an embodiment of the present invention;

Fig. 7 is a schematic structural diagram of a vacuum chamber provided according to an embodiment of the present invention.

detailed description

In order to make the object, technical solution and beneficial effect of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific implementations described in this specification are only for explaining the present invention, not for limiting the present invention.

In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it should not be construed as limiting the invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of said features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected, directly connected, or indirectly connected through an intermediary, and can be an internal communication between two elements or an interactive relationship between two elements. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention according to specific situations.

In the present invention, unless otherwise clearly specified and limited, a first feature being "on" or "under" a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them. Moreover, "above", "above" and "above" the first feature on the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature. "Below", "below" and "under" the first feature to the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is less horizontal than the second feature.

The existing conventional energy regulation method is usually to adjust the ion generator itself (such as adjusting power, air pressure, etc.). Fig. 1 is a flow chart of the reaction process of the atomic layer etching reaction. For the atomic layer etching reaction, first, chlorine gas (Cl2) or chlorine ions are introduced into the etching chamber, and chlorine gas molecules are adsorbed (or absorbed) on the surface of the silicon material to form a chloride layer. This modification step (step A) is "self-limiting": once the surface is saturated, the reaction stops immediately.

Next, excess chlorine gas in the etching chamber is removed, and argon ions (Ar+) are introduced. These argon ions bombard the silicon wafer, physically removing the chloride layer created by the silicon-chlorine reaction, leaving the underlying unmodified silicon surface. This removal step (step B) is still self-limiting, since the process is also terminated once the chloride layer has been completely removed. After the above two steps are completed, an extremely thin layer of material can be precisely removed from the silicon wafer.

There must be a distribution of ion beam or neutral particle beam in the etching chamber. For example, the energy of argon ions (Ar+) is precisely regulated: argon ions (Ar+) are ionized from argon to diffuse to the substrate surface, there is a distribution, which area of the substrate is in the distribution of argon ions will directly affect the atoms on the substrate surface Layer etching efficiency and accuracy. However, we require that the energy distribution of the ion beam or neutral particle beam moving to the surface of the substrate can be precisely regulated, and there is no need to be limited by the fixed distance between the ion beam or neutral particle beam generating device and the substrate.

Therefore, in the exemplary atomic layer etching reaction device and etching method for selecting the particle energy field region disclosed herein, the multi-axis parallel arm platform assembly 31 is connected to the substrate tray 32 and can drive the substrate The tray 32 moves in translation, rotation or inclination, and the substrate tray 32 can freely appear in different positions of the ion field at different times, so as to precisely control the energy required by the substrate.

In an embodiment of the present invention, as shown in FIG. 2 to FIG. 6 , the atomic layer etching reaction device includes: a vacuum mechanism 1 , and the vacuum mechanism 1 provides a place for the atomic layer etching reaction.

Wherein, the atomic layer etching reaction can be carried out inside the vacuum mechanism 1 .

The ion source 2 is arranged outside the vacuum mechanism 1 and communicated with the vacuum mechanism 1 , and the ion source 2 is used to generate an ion field inside the vacuum mechanism 1 .

Wherein, the ion field refers to the distribution field of several ions generated by the ion source 2 , and the ion beam can enter the interior of the vacuum mechanism 1 through the part where the ion source 2 communicates with the vacuum mechanism 1 . An ion beam is formed from a number of ions.

If an electronic neutralizer is added, the electronic neutralizer is used to generate neutral particles, and the neutral particles can enter the vacuum mechanism 1 through the part where the electronic neutralizer communicates with the vacuum mechanism 1 . The ion field at this time refers to the distribution field of several ions and neutral particles. A neutral particle beam is formed from several neutral particles.

The platform assembly 3 is located inside the vacuum mechanism 1 and is used to carry the substrate. Wherein, the platform assembly 3 can fix the substrate when the atomic layer etching reaction is performed.

Wherein, driven by the platform assembly 3, the substrate can change its position in the ion field according to a preset path to be etched according to a preset pattern. The preset pattern of the substrate refers to the area of the substrate to be etched.

Among them, the platform assembly 3 can adjust the position to drive the substrate to perform translation, rotation or tilting movement, so that the substrate can freely appear in different positions of the ion field at different times, and realize selective atomic layer etching of the substrate.

The above-mentioned atomic layer etching reaction device, the platform assembly 3 can drive the substrate to perform translation, rotation or tilting motion, and it is no longer necessary to stick to the limitation of the fixed distance between the ion beam or neutral particle beam generating device and the substrate in the prior art, Furthermore, according to the energy distribution area of the ion field, combined with the energy range that the substrate needs to be precisely regulated, the substrate can freely appear in different positions of the ion field, and an appropriate energy distribution interval is selected to perform precise atomic layer engraving on the substrate. eclipse.

In the embodiment of the present invention, as shown in Figures 4 to 5, the platform assembly 3 includes a multi-axis parallel arm platform assembly 31, a substrate tray 32 and a baffle 33, the multi-axis parallel arm platform assembly 31 is arranged inside the vacuum mechanism 1, the multi-axis parallel arm platform assembly 31 is movably connected with the substrate tray 32, and the multi-axis parallel arm platform assembly 31 can drive the substrate tray 32 to perform translation, rotation or tilting motion, The substrate tray 32 is used to carry the substrate, and the baffle plate 33 is covered on the multi-axis parallel arm platform assembly 31 .

Combined with the integrated detection means, the energy density at a certain point can be detected in real time, and immediately fed back to the platform assembly 3. The platform assembly 3 self-adjusts to the appropriate energy distribution area, allowing the ion energy required for the atomic layer etching reaction to be selected. Have "independent thought". Specifically, the integrated detection means can detect the energy at the position of the substrate tray 32 to obtain the energy distribution of the ion field.

According to the ion field distribution, the running track of the multi-axis parallel arm platform assembly 31 is edited so that the substrate freely appears in different positions at different times. Specifically, when the multi-axis parallel arm platform assembly 31 is turned on, the multi-axis parallel arm platform assembly 31 can drive the substrate tray 32 to move in translation, rotation or tilt, and then drive the substrate to move in translation, rotation or tilt. The substrate tray 32 and the substrate move in the ion field, and the substrate can freely choose which distribution area of the ion field to perform atomic layer etching.

According to the ion field distribution, the substrate can be in different areas and positions of the ion field, and then according to the energy range that needs to be precisely regulated by the substrate, the substrate can be optimally selected for the appropriate ion beam energy distribution area, and then the substrate can be precisely controlled. Atomic layer etching. At the same time, the freedom of regulation is greatly increased, the atomic layer etching can be fully and effectively performed, and the accuracy of atomic layer etching is also improved.

The baffle 33 protects the multi-axis parallel arm platform assembly 31 from damage and interference from foreign objects.

In the embodiment of the present invention, as shown in FIGS. 4 to 6 , the multi-axis parallel arm platform assembly 31 is a six-axis parallel arm platform assembly.

In the embodiment of the present invention, as shown in Figure 6, the multi-axis parallel arm platform assembly 31 includes a base 311, a motion platform 312 and several linear drive devices 313, the base 311 is arranged inside the vacuum mechanism 1, fixed Without moving, the moving platform 312 is connected to the substrate tray 32, and the two ends of each linear drive device 313 are respectively connected to the base 311 and the moving platform 312 in multi-directional rotation; the baffle 33 includes an upper baffle 331 and The lower baffle 332 , the upper baffle 331 and the lower baffle 332 are provided between the base 311 and the moving platform 312 .

According to the distribution of the ion field, the running trajectories of several linear driving devices 313 are edited so that the substrate freely appears in different positions at different times. Specifically, several linear driving devices 313 are turned on at the same time, and several linear driving devices 313 can drive the motion platform 312 and the substrate tray 32 to perform translational, rotational or tilting movements, and then drive the substrate to perform translational, rotational or tilting movements. The moving platform 312, the substrate tray 32, and the substrate move in the ion field, and the substrate can freely choose which distribution area of the ion field to perform atomic layer etching.

The upper baffle 331 and the lower baffle 332 protect the base 311 , the motion platform 312 and several linear drive devices 313 multi-axis parallel arm platform assembly 31 from damage.

In the embodiment of the present invention, the platform assembly 3 also includes a charging interface, which enables an external power supply to supply power to several linear drive devices 313; a programmable control circuit, and the control circuit is electrically connected to several linear drive devices 313 , and logically control it.

In the embodiment of the present invention, the motion platform 312 is provided with an anti-corrosion material, which is resistant to corrosion by corrosive gases and plays a certain protective role against ion beam bombardment.

In the embodiment of the present invention, as shown in Fig. 5 to Fig. 6, several linear drive devices 313 form a group in pairs, and one end of the two linear drive devices 313 in each group is rotated by the first transmission device They are arranged at the same corner of the base 311 , and the other ends of the two linear drive devices 313 in each group are rotated and arranged at two adjacent top corners of the triangular seat on the motion platform 312 through the second transmission device.

Wherein, there are six linear driving devices 313, and the six linear driving devices 313 form a group of two, and are divided into three groups, which are M group, N group and L group respectively. The two linear drive devices 313 in group M are named M1 and M2 respectively, the two linear drive devices 313 in group N are named N1 and N2 respectively, and the two linear drive devices 313 in group L are named L1 and L2 respectively .

Wherein, the three corners of the base 311 are A, B, and C respectively. The three top angles of the triangular base are X, Y, and Z respectively.

As shown in Figures 5 to 6, in group M, one end of M1 and M2 is rotated at A of the base 311 through the first transmission device, and the other ends of M1 and M2 are rotated at X and Z through the second transmission device. place. In group N, one end of N1 and N2 is rotated at B of the base 311 through the first transmission device, and the other ends of N1 and N2 are rotated at X and Y through the second transmission device. In group L, one end of L1 and L2 is rotated at C of the base 311 through the first transmission device, and the other ends of L1 and L2 are rotated at Z and Y through the second transmission device.

The "first" and "second" in the first transmission device and the second transmission device are only for distinguishing each of the transmission devices, and are not intended to limit the number or order of the transmission devices.

In the embodiment of the present invention, as shown in FIG. 6 , the base 311 is a triangle whose corners are curved and chamfered.

In the embodiment of the present invention, the motion platform 312 is provided with a triangular seat with an arc-shaped chamfered corner.

In an embodiment of the present invention, the hinges of the first transmission device and the second transmission device include biaxial hinges.

In an embodiment of the present invention, the biaxial hinge includes a first biaxial hinge and a second biaxial hinge that are rotatably connected, and in some of the hinges, the first biaxial hinge is rotatably connected to the corner, and the second biaxial hinge is connected to the corner. One end of the linear drive device 313 is rotatably connected, the first two-axis hinge of the remaining hinges is rotatably connected to the top corner, and the second two-axis hinge is rotatably connected to the other end of the linear drive device 313 .

The "first" and "second" in the first biaxial hinge and the second biaxial hinge are only for distinguishing each biaxial hinge, which is not a limitation on the number or order of the biaxial hinges.

In the embodiment of the present invention, as shown in Fig. 5 to Fig. 6, when the moving platform 312 is in the initial horizontal state, the distance between each point of the bottom wall of the moving platform 312 and the inner bottom wall of the vacuum mechanism 1 is equal , the distance between each point and the inner bottom wall is the peak value.

Each of the linear driving devices 313 is in an inclined state, and an initial angle is formed between each of the linear driving devices 313 and the inner bottom wall of the vacuum mechanism 1 .

When the moving platform 312 is in a translation state, the distances between each point on the bottom wall of the moving platform 312 and the inner bottom wall of the vacuum mechanism 1 are equal, and the distance between each point and the inner bottom wall is smaller than the peak value. Each of the linear driving devices 313 is in an inclined state, and a first included angle is formed between each of the linear driving devices 313 and the inner bottom wall of the vacuum mechanism 1 , and the first included angle is larger or smaller than the initial included angle.

When the moving platform 312 is in an inclined state, the distances between each point of the bottom wall of the moving platform 312 and the inner bottom wall of the vacuum mechanism 1 are different, and the distances between some points and the inner bottom wall are smaller than the peak value, the remaining The distance between the points and the inner bottom wall is larger than the peak value. Each of the linear driving devices 313 is in an inclined state, and a second included angle is formed between each of the linear driving devices 313 and the inner bottom wall of the vacuum mechanism 1 , and the second included angle is larger or smaller than the initial included angle.

The "first" and "second" in the first included angle and the second included angle are just to be able to distinguish the different included angles formed between each linear drive device 313 and the inner bottom wall of the vacuum mechanism 1, which are not Restrictions on the number or order of included angles.

In the embodiment of the present invention, as shown in FIGS. 2 to 3 , the vacuum mechanism 1 includes a vacuum cavity 11 . It is worth noting that the vacuum cavity 11 is only given as an example, as long as it is a vacuum space, it is within the protection scope of the present application.

In the embodiment of the present invention, anti-corrosion materials are provided on the inner wall of the vacuum mechanism 1 . The atomic layer etching reaction is carried out inside the vacuum mechanism 1, so special anti-corrosion treatment is required inside the vacuum mechanism 1 to resist corrosive gas corrosion, withstand ion beam bombardment, and prolong the practical life.

In the embodiment of the present invention, as shown in FIG. 2 , the vacuum mechanism 1 is provided with an inspection door 13 . Inspection door 13 is mainly convenient to carry out inspection to vacuum mechanism 1, platform assembly 3.

In the embodiment of the present invention, as shown in FIG. 3 , the vacuum mechanism 1 has a vacuum port 14 . The vacuum mechanism 1 evacuates air through the vacuum port 14 to make the interior into a vacuum condition, so as to meet the requirements of the atomic layer etching reaction.

In the embodiment of the present invention, as shown in FIGS. 2 to 3 , a vacuum flange 141 is provided at the vacuum port 14 . The vacuum flange 141 is used for connecting vacuum equipment.

In the embodiment of the present invention, the ion source 2 is at least one of an inductively coupled ion source, a capacitively coupled ion source, a radio frequency ion source, a Hall ion source and a Kaufman ion source.

An embodiment of the present invention provides an atomic layer etching reaction device including: a vacuum mechanism 1, which provides a place for the atomic layer etching reaction. As shown in FIG. 7, the vacuum mechanism 1 includes a vacuum chamber 12; Source 2, the ion source 2 is arranged outside the vacuum mechanism 1 and communicated with the vacuum mechanism 1, the ion source 2 is used to generate an ion field inside the vacuum mechanism 1; platform assembly 3, the platform assembly 3 is located The inside of the vacuum mechanism 1 is used to carry the substrate; wherein, driven by the platform assembly 3 , the substrate can change its position in the ion field according to a preset path to be etched according to a preset pattern.

It is worth noting that the vacuum chamber 12 is only provided as an example, as long as it is a vacuum space, it is within the protection scope of the present application.

The above-mentioned atomic layer etching reaction device, the platform assembly 3 can drive the substrate to perform translation, rotation or tilting motion, and it is no longer necessary to stick to the limitation of the fixed distance between the ion beam or neutral particle beam generating device and the substrate in the prior art, Furthermore, according to the energy distribution area of the ion field, combined with the energy range that the substrate needs to be precisely controlled, the substrate can freely appear in different positions of the ion field at different times, realizing precise atomic layer etching of the substrate.

Wherein, the ion source 2 and the platform assembly 3 have been described in detail in the previous embodiments, and will not be repeated here.

An etching method, using any one of the above-mentioned atomic layer etching reaction devices, comprising the following steps: S100, introducing an etching gas into the vacuum mechanism 1, and turning on the ion source 2 to excite the etching gas An ion field is formed inside the vacuum mechanism 1, and the platform assembly 3 is turned on, and the platform assembly 3 drives the substrate to change its position in the ion field according to a preset path so that the substrate follows a preset path. Let the pattern be etched.

Wherein, the atomic layer etching reaction device has been described in detail in the previous embodiments of the atomic layer etching reaction device, and will not be repeated here.

The introduction provided by the above steps is only used to help understand the method, structure and core idea of the present invention. For those skilled in the art, without departing from the principle of the present invention, some improvements and modifications can be made to the present invention, and these improvements and modifications also belong to the protection scope of the claims of the present invention.

Claims (10)

1. An atomic layer etching reaction apparatus, comprising: the vacuum mechanism (1), the said vacuum mechanism (1) offers the place for atomic layer etching reaction;

the ion source (2) is communicated with the vacuum mechanism (1), and the ion source (2) is used for generating an ion field inside the vacuum mechanism (1);

the platform assembly (3) is positioned inside the vacuum mechanism (1) and is used for bearing the substrate;

wherein, under the drive of the platform assembly (3), the substrate is etched according to a preset pattern by changing the position in the ion field according to a preset path.

2. The atomic layer etching reaction device according to claim 1, wherein the platform assembly (3) comprises a multi-axis parallel arm platform assembly (31), a substrate tray (32) and a baffle plate (33), the multi-axis parallel arm platform assembly (31) is arranged inside the vacuum mechanism (1), the multi-axis parallel arm platform assembly (31) is in transmission connection with the substrate tray (32), the substrate tray (32) is used for bearing a substrate, and the baffle plate (33) covers the multi-axis parallel arm platform assembly (31).

3. The atomic layer etch reactor according to claim 2, wherein the multi-axis parallel arm platform assembly (31) is a six-axis parallel arm platform assembly.

4. The atomic layer etching reaction device according to any of claims 2 to 3, wherein the multi-axis parallel arm platform assembly (31) comprises a base (311), a moving platform (312) and a plurality of linear driving devices (313), the base (311) is disposed inside the vacuum mechanism (1), the moving platform (312) is connected with the substrate tray (32), and two ends of each linear driving device (313) are respectively connected with the base (311) and the moving platform (312) in a multi-directional rotation manner;

the baffle (33) comprises an upper baffle (331) and a lower baffle (332), and the upper baffle (33) and the lower baffle (33) are covered between the base (311) and the moving platform (312).

5. The atomic layer etching reaction device according to claim 4, wherein the plurality of linear driving devices (313) are grouped in pairs, one end of each group of two linear driving devices (313) is rotatably disposed at the same corner of the base (311) through a first transmission device, and the other end of each group of two linear driving devices (313) is rotatably disposed at two adjacent corners of the triangular seat on the moving platform (312) through a second transmission device.

6. The atomic layer etch reactor of claim 5, wherein the first actuator and the second actuator each comprise a biaxial hinge.

7. The atomic layer etching reaction device according to any of claims 4 to 5, wherein each of the linear driving devices (313) is in a tilted state when the moving platform (312) is in an initial horizontal state.

8. The atomic layer etching reaction device according to claim 1, wherein an anti-corrosive material is provided on an inner wall of the vacuum mechanism (1).

9. The atomic layer etch reactor of claim 1, wherein the ion source (2) is at least one of an inductively coupled ion source, a capacitively coupled ion source, a radio frequency ion source, a hall ion source, and a koffman ion source.

10. An etching method for performing atomic layer etching by using the atomic layer etching reaction device of any one of 1 to 9 is characterized by comprising the following steps:

s100, introducing etching gas into the vacuum mechanism (1), starting the ion source (2), exciting the etching gas to form an ion field in the vacuum mechanism (1), starting the platform assembly (3), and driving the substrate to change the position in the ion field according to a preset path by the platform assembly (3) so that the substrate is etched according to a preset pattern.

Images