CN1230714C - Manufacturing method of active organic electroluminescence display - Google Patents
Manufacturing method of active organic electroluminescence display Download PDFInfo
- Publication number
- CN1230714C CN1230714C CN 02122734 CN02122734A CN1230714C CN 1230714 C CN1230714 C CN 1230714C CN 02122734 CN02122734 CN 02122734 CN 02122734 A CN02122734 A CN 02122734A CN 1230714 C CN1230714 C CN 1230714C
- Authority
- CN
- China
- Prior art keywords
- layer
- amorphous silicon
- silicon layer
- sweep trace
- insulation substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000005401 electroluminescence Methods 0.000 title description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000003990 capacitor Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 38
- 238000005516 engineering process Methods 0.000 claims description 35
- 238000009413 insulation Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000011368 organic material Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 59
- 238000001259 photo etching Methods 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 239000011241 protective layer Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 238000012797 qualification Methods 0.000 description 4
- 238000010923 batch production Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
A method for fabricating an active organic electroluminescent display. And forming a first scanning line, a second scanning line and a lower electrode of the capacitor on the first metal layer by using a first photoetching process, and sequentially forming a gate insulating layer, an amorphous silicon layer and a doped amorphous silicon layer. And forming the amorphous silicon layer and the doped polycrystalline silicon layer into a first island-shaped structure and a second island-shaped structure by using a second photoetching process, and removing part of the gate insulating layer outside the preset amorphous silicon TFT element region of the second scanning line by using a third photoetching process to form a through hole. And defining the transparent conductive layer to form a display area pattern by using a fourth photoetching process. And forming a second metal layer into a data line and an upper electrode of the capacitor by using a fifth photoetching process, and forming a first opening and a second opening above the first island-shaped structure and the second island-shaped structure respectively until the surface of the amorphous silicon layer is exposed. And removing the protective layer covering the display area by using a sixth mask. And forming an organic light-emitting material layer and a cathode metal layer.
Description
Technical field
The present invention relates to the method for making of a kind of active system organic electroluminescent display (hereinafter to be referred as AM-OLED), the method for making of the AM-OLED of particularly a kind of amorphous silicon film transistor (a-Si:H TFT).
Background technology
Display of organic electroluminescence (Organic Electroluminescence Device; Organic LightEmitting Diode, be called for short OLED), can be distinguished into active (active matrix) and two kinds of passive types according to its type of drive, wherein active system organic electroluminescent display (hereinafter to be referred as AM-OLED) utilizes current drives, each pixel will have a switching thin-film transistor (switch TFT) at least, enters the usefulness of storage switch and addressing as view data; Need a drive thin film transistors (drivingTFT) in addition,, promptly control the bright difference that reaches GTG of pixel according to the size that the difference of electric capacity stored voltage is regulated drive current.Present active type of drive has the type of drive of using 2 TFT elements and the type of drive of using 4 TFT elements.
In the making relevant for the TFT element, because the carrier mobility integrated level higher, driving circuit of multi-crystal TFT element is better, leakage current is less, can be applicable in the circuit of high operating speed, therefore the TFT technology of current display of organic electroluminescence trends towards using low temperature polycrystalline silicon (low-temperature polysilicon, LTPS) technology.Yet LTPS need reach eight, nine road photoengraving carving technologies, and its cost cost is high, and the product percent of pass of LTPS technology slowly can't improve, and more can't be applied to the batch process of large size panel.By contrast, amorphous silicon (amorphous silicon, a-Si:H) technology already maturation be applied to large scale liquid crystal display (Liquid Crystal Display), and only need the photoengraving carving technology about five, six roads, its cost and technological quality relatively have competitiveness.In view of this, how improving the structure and the production process thereof of a-Si:H TFT element, and be applied to the technology of AM-OLED, is a current important topic.
Summary of the invention
Fundamental purpose of the present invention is to provide the method for making of the AM-OLED of a kind of a-Si:H TFT, can realize reducing photoetching etching process number order, improves qualification rate and guarantee advantages such as AM-OLED luminescent quality.
The method for making of AM-OLED of the present invention comprises: a transparent insulation substrate is provided; On this transparent insulation substrate, form a first metal layer, and utilize the first road photoengraving carving technology that this first metal layer etching is formed the bottom electrode, of first sweep trace along the directions X extension, a capacitor along second sweep trace of directions X extension and the figure of source electrode line; On the whole surface of this transparent insulation substrate, form a gate insulator, an amorphous silicon layer and a doped amorphous silicon layer in regular turn; Utilize the second road photoengraving carving technology, this amorphous silicon layer in the predetermined non-crystalline silicon tft element area of this first, second sweep trace and the definition of this doped amorphous silicon layer are formed first, second island structure, and this amorphous silicon layer beyond the predetermined non-crystalline silicon tft element area of this second sweep trace and this doped amorphous silicon layer are removed; Utilize the 3rd road photoengraving carving technology, the part of grid pole insulation course is removed, form one first through hole and one second through hole with top respectively at source electrode line and second sweep trace, one end; On the whole surface of this transparent insulation substrate, form a transparency conducting layer, and utilize the 4th road photoengraving carving technology, this transparency conducting layer definition is formed the pattern of a viewing area; On the whole surface of this transparent insulation substrate, form one second metal level, cover first and second through holes and utilize the 5th road photoengraving carving technology to make this second metal level definition form one along the data line of Y direction extension and the top electrode of a capacitor, and make this second metal level cover first, second island structure, wherein this first, second island structure top forms one first respectively, second opening exposes until the surface that makes this amorphous silicon layer, wherein this opening can make this second metal level be distinguished into one source/drain region, makes this doped amorphous silicon layer be distinguished into one source/drain diffusion regions; On the whole surface of this transparent insulation substrate, form a protective seam, and this protective seam that utilizes the 6th road mask will cover this viewing area is removed; On the whole surface of this transparent insulation substrate, form a luminous organic material layer; And on the surface of this luminous organic material layer, form a cathodic metal layer.
According to above-mentioned purpose, of the present invention one is characterised in that in conjunction with the non-crystalline silicon tft technology, only need use just can the complete structure of AM-OLED pixel region of six road photoengraving carving technologies.
Another feature of the present invention is in conjunction with the non-crystalline silicon tft technology, can effectively reduce the AM-OLED cost of manufacture, improves the qualification rate of non-crystalline silicon tft element and be applicable to the batch process of large size panel.
Of the present inventionly one be characterised in that again, and, can further improve the travelling speed of non-crystalline silicon tft element in conjunction with thickness that reduces gate insulator and the growth rate of slowing down amorphous silicon layer in conjunction with the non-crystalline silicon tft technology.
Description of drawings
Fig. 1, the top view of the OLED of the non-crystalline silicon tft of its demonstration first embodiment of the invention;
Fig. 2 A to 2G is the diagrammatic cross-section along the OLED process of the non-crystalline silicon tft of tangent line A-A ' the demonstration first embodiment of the invention of Fig. 1;
Fig. 3 A to 3G is the diagrammatic cross-section along the OLED process of the non-crystalline silicon tft of tangent line B-B ' the demonstration first embodiment of the invention of Fig. 1;
Fig. 4 A is the diagrammatic cross-section along the OLED process of the non-crystalline silicon tft of tangent line A-A ' the demonstration second embodiment of the invention of Fig. 1;
Fig. 4 B is the diagrammatic cross-section along the OLED process of the non-crystalline silicon tft of tangent line B-B ' the demonstration second embodiment of the invention of Fig. 1; And
Fig. 5 shows the top view of OLED of the non-crystalline silicon tft of third embodiment of the invention.
Description of reference numerals in the accompanying drawing is as follows: pixel region～10; Data line～12; Source electrode line～14; Sweep trace～16I, 16II; Non-crystalline silicon tft element～18I, 18II; Viewing area～20; Capacitor～Cs; Bottom electrode～the Cs1 of capacitor; Top electrode～the Cs2 of capacitor; Transparent insulation substrate～30; The first metal layer～32; Gate insulator～34; Amorphous silicon layer～36; Doped amorphous silicon layer～38; Island structure～39I, 39II; Through hole～40I, 40II; Transparency conducting layer～42; Second metal level～44; Opening～46I, 46II; Protective seam～48; Screen layer～49; Organic/polymer luminous material layer～50; Cathodic metal layer 52.
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below:
Embodiment
The invention provides a kind of method for making of active system organic electroluminescent display (AM-OLED) of non-crystalline silicon tft, it is in conjunction with the non-crystalline silicon tft technology, only need use just can the complete structure of pixel region of six road photoengraving carving technologies.
First embodiment
See also Fig. 1, the top view of the AM-OLED of the non-crystalline silicon tft of its demonstration first embodiment of the invention.Be example with the AM-OLED that uses two non-crystalline silicon tfts, it includes the pixel region 10 of a plurality of arrays, by the data line 12 that extends along the Y direction and the source electrode line that extends along directions X (source line or claim V
DdLine) 14 formations.In each pixel region 10, include two sweep trace 16I that extend along directions X and 16II, two non-crystalline silicon tft element 18I and 18II, a viewing area 20 and a capacitor Cs who is constituted by the rectangle transparency electrode.The method for making of general non-crystalline silicon tft structure, the method for making that can be divided into etch-stop type (etching stopper type) and back of the body channel-type (back channel type) below illustrates the AM-OLED technology of non-crystalline silicon tft of the present invention with the method for making of etch-stop type.
Fig. 2 A to 2G is the diagrammatic cross-section that shows the non-crystalline silicon tft-OLED process of first embodiment of the invention along the tangent line A-A ' of Fig. 1.Fig. 3 A to 3G is the diagrammatic cross-section that shows the non-crystalline silicon tft-OLED process of first embodiment of the invention along the tangent line B-B ' of Fig. 1.
At first, shown in Fig. 2 A and 3A, on a transparent insulation substrate 30 surfaces, form a first metal layer 32, utilize the first road mask again, with the figure of the first metal layer 32 definition formation bottom electrode Cs1 of source electrode line 14, sweep trace 16I, 16II and capacitor Cs shown in Figure 1.
Then, shown in Fig. 2 B and 3B, on the surface of transparent insulation substrate 30, form a gate insulator 34, an amorphous silicon layer 36 and a doped amorphous silicon layer 38 in regular turn.Wherein, the structure of gate insulator 34 can be SiO
2, materials such as SiN, SiON individual layer or double-decker.Subsequently, utilize the second road mask, with the photoengraving lithography portion of amorphous silicon layer 36 and doped amorphous silicon layer 38 are removed, forming an island structure 39I and a 39II respectively with definition on the presumptive area of non-crystalline silicon tft element 18I shown in Figure 1 and 18II, is to remove fully as for the amorphous silicon layer 36 and 38 of the doped amorphous silicon layers of source electrode line 14, bottom electrode Cs1 and sweep trace 16II one end.
And then, shown in Fig. 2 C and 3C, utilize the 3rd road mask, part of grid pole insulation course 34 is removed, form one first through hole 40I and one second through hole 40II with top respectively at source electrode line 14 and sweep trace 16II one end with the photoengraving lithography.
Then, shown in Fig. 2 D and 3D, prior to forming a transparency conducting layer 42 on the whole surface of transparent insulation substrate 30, for example the ITO layer utilizes the 4th road mask again, with the pattern of photoengraving lithography with transparency conducting layer 42 definition formation viewing area 20 shown in Figure 1.
Next, shown in Fig. 2 E and 3E, prior to forming one second metal level 44 on the whole surface of transparent insulation substrate 30, utilize the pattern of the 5th road mask again with the second metal level 44 definition formation top electrode Cs2 of data line 12 shown in Figure 1 and capacitor Cs, simultaneously can make second metal level 44 cover the first through hole 40I and be electrically connected effect to provide, and this step need expose the pattern of viewing area 20 with the second through hole 40II.In addition, this step also forms one first opening 46I and one second opening 46II in the pre-defined gate top definition of island structure 39I, 39II, it can make second metal level 44 distinguish becomes source electrode (44I or 44II), doped amorphous silicon layer 38 is distinguished becomes source diffusion region (38I or 38II), is used as a passage as for 36 of exposed noncrystalline silicon layer.So just roughly complete two non-crystalline silicon tft element 18I and 18II shown in Figure 1.
As Fig. 2 F and 3F shown in, prior to the whole surface of transparent insulation substrate 30 on form a protective seam 48, again utilize six road mask protective seam viewing area 20 on 48 removed, just roughly finish non-crystalline silicon tft technology thereafter.Then, shown in Fig. 2 G and 3G, can be according to traditional AM-OLED technology, evaporation one an organic/polymer luminous material layer 50 and a cathodic metal layer 52 in regular turn are just roughly finish the technology of AM-OLED.
In addition, for the operating current (on-current) that improves non-crystalline silicon tft element 18, can be in conjunction with the thickness of adjusting gate insulator 34 and the growth rate of amorphous silicon layer 36.In a preferred embodiment, the thickness of gate insulator 34 can be reduced to less than 3000 , also the growth rate of amorphous silicon layer 36 can be reduced to 4.0 /below the s.
Compare with existing LTPS TFT technology, the present invention is applied to a-Si:H TFT technology in the AM-OLED technology, only need just can the complete structure of pixel region 10 of six road masks, therefore can effectively reduce cost of manufacture, improve the qualification rate of non-crystalline silicon tft element 18 and be applicable to the batch process of large size panel.And technology of the present invention will can further improve the travelling speed of non-crystalline silicon tft element 18 in conjunction with thickness that reduces gate insulator 34 and the growth rate of slowing down amorphous silicon layer 36.
Second embodiment
Owing to before carrying out evaporation process, must carry out surface clean technology, therefore for fear of amorphous silicon layer 36 by LV light or plasma damage in the follow-up cleaning, so second embodiment of the invention provides a shielding construction, in order to cover amorphous silicon layer 36.
Fig. 4 A is the diagrammatic cross-section along the AM-OLED process of the non-crystalline silicon tft of tangent line A-A ' the demonstration second embodiment of the invention of Fig. 1.Fig. 4 B is the diagrammatic cross-section along the AM-OLED process of the non-crystalline silicon tft of tangent line B-B ' the demonstration second embodiment of the invention of Fig. 1.At first,, can on transparent insulation substrate 30, finish two non-crystalline silicon tft element 18I and 18II, no longer be narrated in this according to the described six road photoengraving carving technologies of first embodiment.Then; after the pattern of the protective seam 48 that completes; on the pattern of protective seam 48, cover a screen layer 49; only expose viewing area 20; can shield amorphous silicon layer 36; preventing it, and then improve the problem that existing starting potential increases or leakage current increases by UV light or plasma damage in the follow-up surface clean technology.In a preferred embodiment, the optional usefulness of the material of screen layer 49 has monolayer material (as: CrO light tight and insulation
x) or contain the double-decker (as: pi/carbon black) of macromolecule resin, or contain the double-decker (as: SiO of light tight metal
x/ Cr).
The 3rd embodiment
See also Fig. 5, the top view of the AM-OLED of the non-crystalline silicon tft of its demonstration third embodiment of the invention.The AM-OLED of the non-crystalline silicon tft of third embodiment of the invention design roughly designs phasor with first embodiment shown in Figure 1, and unique difference is the Position Design of the first through hole 40I, and it is positioned at the juncture area of non-crystalline silicon tft element 18II and viewing area 20.Production process as for the AM-OLED of the non-crystalline silicon tft of the 3rd embodiment can be consulted the described method of first embodiment, is no longer narrated in this.
Though the present invention with a preferred embodiment openly as above; but it is not that those of ordinary skills are under the situation that does not break away from the spirit and scope of the present invention in order to qualification the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion so that claim is determined.
Claims (7)
1. the method for making of an active system organic electroluminescent display, it includes the following step:
One transparent insulation substrate is provided;
On this transparent insulation substrate, form a first metal layer, and utilize the first road photoengraving carving technology that this first metal layer etching is formed the bottom electrode, of first sweep trace along the directions X extension, a capacitor along second sweep trace of directions X extension and the figure of source electrode line;
On the whole surface of this transparent insulation substrate, form a gate insulator, an amorphous silicon layer and a doped amorphous silicon layer in regular turn;
Utilize the second road photoengraving carving technology, this amorphous silicon layer in the predetermined non-crystalline silicon tft element area of this first, second sweep trace and the definition of this doped amorphous silicon layer are formed first, second island structure, and this amorphous silicon layer beyond the predetermined non-crystalline silicon tft element area of this second sweep trace and this doped amorphous silicon layer are removed;
Utilize the 3rd road photoengraving carving technology, the part of grid pole insulation course is removed, form one first through hole and one second through hole with top respectively at source electrode line and second sweep trace, one end;
On the whole surface of this transparent insulation substrate, form a transparency conducting layer, and utilize the 4th road photoengraving carving technology, this transparency conducting layer definition is formed the pattern of a viewing area;
On the whole surface of this transparent insulation substrate, form one second metal level, cover first and second through holes and utilize the 5th road photoengraving carving technology to make this second metal level definition form one along the data line of Y direction extension and the top electrode of a capacitor, and make this second metal level cover first, second island structure, wherein this first, second island structure top forms one first respectively, second opening exposes until the surface that makes this amorphous silicon layer, wherein this opening can make this second metal level be distinguished into one source/drain region, makes this doped amorphous silicon layer be distinguished into one source/drain diffusion regions;
On the whole surface of this transparent insulation substrate, form a protective seam, and this protective seam that utilizes the 6th road mask will cover this viewing area is removed;
On the whole surface of this transparent insulation substrate, form a luminous organic material layer; And
On the surface of this luminous organic material layer, form a cathodic metal layer.
2. the method for making of active system organic electroluminescent display as claimed in claim 1, before forming this luminous organic material layer, other includes the following step:
On the whole surface of this transparent insulation substrate, form a screen layer;
This screen layer definition is formed on this protective seam surface, makes this screen layer can cover this amorphous silicon layer, and expose this viewing area.
3. the method for making of active system organic electroluminescent display as claimed in claim 2, wherein this screen layer is made of material opaque and insulation.
4. the method for making of active system organic electroluminescent display as claimed in claim 1, wherein the thickness of this gate insulator is less than 3000 .
5. the method for making of active system organic electroluminescent display as claimed in claim 1, wherein the growth rate of this amorphous silicon layer is less than 4.0 /s.
6. the method for making of active system organic electroluminescent display as claimed in claim 1, wherein this transparency conducting layer is made of the ITO material.
7. the method for making of active system organic electroluminescent display as claimed in claim 6, wherein this first sweep trace, this second sweep trace and this source electrode line are docile and obedient preface and are arranged in parallel, and the bottom electrode of this capacitor is between this first sweep trace and this second sweep trace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02122734 CN1230714C (en) | 2002-06-07 | 2002-06-07 | Manufacturing method of active organic electroluminescence display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02122734 CN1230714C (en) | 2002-06-07 | 2002-06-07 | Manufacturing method of active organic electroluminescence display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1464339A CN1464339A (en) | 2003-12-31 |
| CN1230714C true CN1230714C (en) | 2005-12-07 |
Family
ID=29743326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02122734 Expired - Lifetime CN1230714C (en) | 2002-06-07 | 2002-06-07 | Manufacturing method of active organic electroluminescence display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1230714C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100508191C (en) * | 2006-09-07 | 2009-07-01 | 友达光电股份有限公司 | Display panel and method for manufacturing the same |
-
2002
- 2002-06-07 CN CN 02122734 patent/CN1230714C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1464339A (en) | 2003-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7723814B2 (en) | display device | |
| JP7621420B2 (en) | Display device | |
| US7176070B2 (en) | Active matrix organic light emitting display and method of forming the same | |
| US7575966B2 (en) | Method for fabricating pixel structure of active matrix organic light-emitting diode | |
| CN100440569C (en) | Current-driven light-emitting display device and manufacturing method thereof | |
| CN101339923B (en) | Method for forming thin film transistor array panel and the thin film transistor array panel | |
| US10361229B2 (en) | Display device | |
| KR102218725B1 (en) | Oxide Semiconductor Thin Film Transistor Substrate Having Double Light Shield Layers | |
| CN1794068A (en) | Liquid crystal display device and method of fabricating the same | |
| US10971527B2 (en) | Thin-film transistor substrate including data line with lower layer data line and upper layer data line, and liquid crystal display device and organic electroluminescent display device including same | |
| US9618809B2 (en) | Liquid crystal display and method for manufacturing same | |
| CN1313876C (en) | Manufacturing method of pixel structure of thin film transistor liquid crystal display | |
| KR101689886B1 (en) | Method of fabricating the thin film transistor substrate using a oxidized semiconductor | |
| KR20060113324A (en) | Thin film transistor and liquid crystal display device using same | |
| KR102659970B1 (en) | Display substrate and method of manufacturing the same | |
| US20080073686A1 (en) | Thin-Film Transistor Array and Method for Manufacturing the Same | |
| CN1230714C (en) | Manufacturing method of active organic electroluminescence display | |
| CN1277148C (en) | Active organic electroluminescence display and manufacturing method thereof | |
| US7144686B2 (en) | Method of forming an active matrix organic light emitting display | |
| US20240429250A1 (en) | Array substrate and display panel | |
| KR20150002280A (en) | Array substrate for display device having oxide semiconductor and method for fabricating the same | |
| US11644729B2 (en) | Active matrix substrate and liquid crystal display device | |
| US20230200133A1 (en) | Organic Light-Emitting Display Device and Thin-Film Transistor Array Substrate | |
| CN1229681C (en) | Liquid crystal display and peripheral circuit structure and manufacturing method thereof | |
| CN1604341A (en) | Controlled thin film transistor, manufacturing method thereof, and electroluminescent display device including same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20051207 |
|
| CX01 | Expiry of patent term |