CN1217034C - Workpiece processing apparatus having a processing chamber with improved processing fluid flow - Google Patents

Abstract

A processing vessel (610) for providing a flow of processing fluid during immersion processing of at least one surface of a microelectronic workpiece is provided. The processing container includes a principal fluid flow chamber (505) for providing a flow of processing fluid to at least one surface of the workpiece and a plurality of nozzles (535) for providing a flow of processing fluid to the principal fluid flow chamber. The plurality of nozzles are arranged to provide vertical and radial fluid flow components that combine to form a generally uniform normal fluid flow component radially across the surface of the workpiece. The present invention also provides an exemplary apparatus using such a processing vessel, which is particularly suitable for performing an electroplating process. Additionally, the present invention provides an improved drain channel (640) for draining fluid from a principal fluid flow chamber during immersion processing of a microelectronic workpiece.

Description

Workpiece processing apparatus having a processing chamber with improved processing fluid flow

【Related applications】

This application claims priority from the following U.S. applications:

U.S. Patent Application 60/129055, filed April 13, 1999, entitled "WORKPIECE PROCESSOR HAVING IMPROVED PROCESSING CHAMBER" (Attorney No.: SEM4492P0830US);

U.S. Patent Application 60/143769 (Attorney No.: SEM4492P0831US) entitled "WORKPIECE PROCESSOR HAVING IMPROVED PROCESSING CHAMBER" filed on July 12, 1999;

U.S. Patent Application 60/182160 (Attorney No.: SEM4492P0832US) entitled "WORKPIECE PROCESSOR HAVING IMPROVED PROCESSING CHAMBER" filed on February 14, 2000;

【Background technique】

Fabrication of microelectronic components from microelectronic workpieces such as semiconductor wafers, polymer substrates, etc. is a multi-step manufacturing process. For purposes of this application, a microelectronic workpiece includes a workpiece formed from a substrate on which microelectronic circuits or elements, data storage elements or layers, and/or micromechanical elements are formed.

Microelectronic workpieces need to be processed in a variety of ways to produce microelectronic components. Such treatments include material plating, patterning, doping, chemical mechanical polishing, electropolishing and heat treatment. Material plating processes apply thin layers of material to the surface of a workpiece. Patterning is the removal of selected portions of these added layers. Doping of microelectronic workpieces is the incorporation of impurities as "dopants" into selected portions of microelectronic workpieces to alter the electrical properties of the substrate material. Thermal processing of microelectronic workpieces is the process of heating and/or cooling microelectronic workpieces to achieve specific processing effects. Chemical mechanical polishing is a process that removes material through a combined chemical/mechanical process, while electropolishing uses electrochemical reactions to remove material from the surface of a workpiece.

A variety of processing devices are utilized as processing "equipment" to carry out the aforementioned processing. These devices have different structures depending on the type of workpiece processed and the process steps performed by the device. One type of processing equipment is the Equinox(R) wet processing equipment available from Semitool, Inc., of Kalispell, Montana, which includes one or more workpiece handling devices utilizing workpiece holding devices and processing tanks or Containers for wet processing. This wet processing includes electroplating, etching processing, cleaning, chemical plating and electropolishing.

According to a configuration of the aforementioned Equinox(R) apparatus, the workpiece holder and the processing vessel are arranged adjacent to each other, the workpiece holder holding the microelectronic workpiece in contact with the processing fluid in the processing vessel forming the processing chamber. touch. Constraining the process fluid to the appropriate portion of the workpiece is often a difficult problem. Additionally, ensuring proper mass transfer between the treatment fluid and the workpiece surface can be very difficult. Due to the lack of this species transfer control, the treatment of the workpiece surface is usually non-uniform.

Conventional workpiece processing devices employ a variety of different techniques to bring a processing fluid into contact with the workpiece surface in a controlled manner. For example, the treatment fluid is brought into contact with the workpiece surface using a controllable spray device. In other forms of processing, such as partial or full immersion processing, the processing fluid is retained in the processing tank and at least one surface of the workpiece is brought into contact with or beneath the surface of the processing fluid. Electroplating, chemical plating, etching, cleaning and anodizing are all partial or total immersion treatments.

Existing processing vessels typically introduce a continuous flow of processing fluid into the processing chamber through one or more inlets located at the bottom of the processing chamber. By placing a diffuser or the like between the one or more inlets and the surface of the workpiece, the treatment fluid can be evenly distributed over the surface of the workpiece to control the thickness and uniformity of the diffusion layer. Figure 1A shows such a device. The diffuser 1 comprises a plurality of holes 2 which distribute the flow of treatment fluid flowing in from the treatment fluid inlet 3 onto the surface of the workpiece 4 as evenly as possible.

Although increased control over the diffusion layer is possible through the use of diffusers, such control is limited. As shown in FIG. 1A, despite the presence of the diffuser 1, a localized region 5 of increased flow velocity perpendicular to the surface of the microelectronic workpiece remains. These local areas generally correspond to the positions of the holes 2 of the diffuser 1 . This effect is enhanced when the diffuser 1 is in close proximity to the microelectronic workpiece 4, allowing a reduced distance for flow distribution of process fluid from the diffuser to the workpiece. This reduced dispensing distance results in a more concentrated flow of treatment fluid in the localized area 5 .

The inventors have discovered that these localized areas of increased flow velocity on the workpiece surface can affect the state of the diffusion layer and result in non-uniform treatment of the workpiece surface. The thickness of the diffusion layer tends to be thinner in local areas 5 than in other areas of the workpiece surface. Surface reactions occur rapidly in localized regions of reduced diffusion layer thickness, thus resulting in inhomogeneous radial processing of the workpiece. The pore structure of the diffuser can also affect the electric field distribution during electrochemical treatments such as electroplating, and can result in non-uniform treatment of the workpiece surface (eg, non-uniform plating of electroplating materials).

Another problem commonly encountered during the immersion treatment of workpieces is the destruction of the diffusion layer on the surface of the workpiece due to entrapped air bubbles. Bubbles form in the piping and pumping systems of the treatment unit and enter the treatment chamber, where they migrate and remain on the workpiece surface being treated. Processing is hampered at these locations due to the breakdown of the diffusion layer.

As manufacturers of microelectronic circuits and devices reduce the size of the components and circuits they manufacture, tight control of the conditions of the diffusion layer between the process fluid and the surface of the workpiece has become even more urgent. To this end, the present inventors have provided an improved processing chamber that improves the non-uniform and disorderly distribution of diffusion layers commonly found in workpiece processing equipment commonly used in the microelectronics manufacturing industry. Although the improved processing chamber is described below in conjunction with specific embodiments for electroplating, it is obvious that this improved processing chamber can be used in any workpiece processing equipment that requires uniform processing of the workpiece surface.

【Content of invention】

The present invention provides a processing vessel for creating a flow of a processing fluid during immersion processing of at least one surface of a microelectronic workpiece. The processing vessel includes a primary fluid flow chamber for providing flow of processing fluid to at least one surface of the workpiece and a plurality of orifices for providing flow of processing fluid to the primary fluid flow chamber. The plurality of jets are arranged to provide vertical and radial fluid flow components that combine to form a substantially uniform normal fluid flow component radially across the workpiece surface. The present invention also provides a typical device using such a treatment vessel, which is especially suitable for electrochemical treatment, such as electroplating treatment.

According to another aspect of the present invention, there is provided a reactor for immersion processing of microelectronic workpieces, the reactor comprising a processing vessel having a process fluid inlet through which the process fluid flows into the process vessel middle. The treatment vessel also has an upper rim forming an overflow over which treatment fluid flows out of the treatment vessel. At least one helical flow chamber is disposed externally of the process vessel to receive process fluid flowing out of the process vessel from above the overflow. This configuration facilitates the exit of the spent process fluid from the reactor while reducing turbulence during its exit due to turbulence that may introduce air into the fluid stream or cause unwanted contact between air and the process fluid. the impact.

【Description of drawings】

Figure 1A is a schematic illustration of an immersion treatment reactor assembly incorporating a diffuser to distribute a flow of treatment fluid over the surface of a workpiece.

Figure IB is a cross-sectional view of one embodiment of a reactor assembly of the present invention.

FIG. 2 is a schematic diagram of one embodiment of a reactor chamber for the reactor assembly shown in FIG. 1B , including a velocity flow pattern associated with process fluid flow through the reactor chamber.

3-5 show the special structure of the entire processing chamber assembly, which is especially suitable for electrochemically processing semiconductor wafers, and can realize the velocity flow diagram shown in FIG. 2 .

Figures 6 and 7 show two embodiments of processing plants which may be equipped with one or more processing means according to the invention.

【Detailed ways】

〖Basic Reactor Components〗

FIG. 1B shows a reactor assembly 20 for immersion processing of microelectronic workpieces 25 such as semiconductor wafers. In general, the reactor assembly 20 consists of a reactor head 30 and a corresponding treatment base 37 in which the treatment fluid is contained. The reactor assembly of the illustrated embodiment is particularly suited for electrochemical processing of semiconductor wafers or similar workpieces. However, the reactor configuration shown in FIG. 1B is also suitable for the treatment of other types of workpieces and for other treatments.

The reactor head 30 of the reactor assembly 20 consists of a stationary assembly 70 and a rotor assembly 75 . The rotor assembly 75 receives and carries the associated microelectronic workpiece 25, positions the microelectronic workpiece in a position below the processing side within the processing vessel of the processing base 37, and rotates or rotates the workpiece. Since the illustrated embodiment is suitable for electroplating, the rotor assembly 75 also includes a cathode contact assembly 85 for providing electroplating power to the surface of the microelectronic workpiece. Obviously, however, rear contacts and/or workpiece supports on the reactor head 30 may be used instead of the illustrated front contacts/supports.

The reactor head 30 is typically mounted on a lift/rotation device shaped to allow the reactor head 30 to be rotated from an upward facing arrangement to a downward facing arrangement where the reactor head accepts microelectronic workpieces to be plated , the surface of the microelectronic workpiece to be electroplated is positioned so as to be in contact with the process fluid within the process vessel of the process base 37 when disposed downwardly. The manipulator preferably includes an end effector and is typically used to place the microelectronic workpiece 25 in place on the rotor assembly 75 and remove the plated microelectronic workpiece from the rotor assembly. During loading of the microelectronic workpiece, the contact assembly 85 is operable in an open state, which allows the microelectronic workpiece to be placed on the rotor assembly 75, and a closed state, which secures the microelectronic workpiece. on the rotor assembly for subsequent processing. In an electroplating reactor, this also brings the conductive members of the contact assembly 85 into electrical contact with the surface of the microelectronic workpiece to be electroplated.

Obviously, the above structure is only an example, and the reactor chamber of the present invention can also be used with other reactor assembly structures.

〖Processing container〗

Figure 2 shows the basic structure of the treatment base 37 and the corresponding flow velocity diagram resulting from the structure of the treatment vessel. As shown, the treatment base 37 generally includes a main fluid flow chamber 505, a front chamber 510, a fluid inlet 515, an inflow chamber 520, a diffuser 525 isolating the inflow chamber 520 from the antechamber 510, and separating the inflow chamber 520 from the main fluid flow chamber. Flow chamber 505 is isolated from orifice/orifice assembly 530 . These components cooperate to form a fluid flow (here, a plating solution) over the microelectronic workpiece 25 that has an independent normal component that is generally radial. In the illustrated embodiment, the impingement flow is centered on centerline 537 and has a substantially uniform component perpendicular to the surface of microelectronic workpiece 25 . This results in a substantially uniform flow of material across the surface of the microelectronic workpiece, thereby enabling substantially uniform processing of the microelectronic workpiece.

The treatment fluid is supplied through a fluid inlet 515 provided at the bottom of the container 35 . The fluid flowing in from the fluid inlet 515 passes through the front chamber 510 at a relatively high flow rate. In the illustrated embodiment, the front chamber 510 includes an acceleration channel 540 through which process fluid flows radially from the fluid inlet 515 to the fluid flow region 545 of the front chamber 510 . The substantially inverted U-shaped cross-section of the fluid flow region 545 is wider near the outlet region of the flow diffuser 525 than at its inlet region near the acceleration channel 540 . This change in cross-section helps to remove air bubbles from the treatment fluid before it enters the main fluid flow chamber 505 . Bubbles that otherwise enter the main fluid flow chamber 505 can flow out of the process through a gas outlet (not shown in FIG. 2 but shown in the embodiment shown in FIGS. 3-5 ) provided on the upper portion of the anterior chamber base37.

The treatment fluid within the front chamber 510 is ultimately supplied to the main fluid flow chamber 505 . To this end, the process fluid first flows from the relatively high pressure region 550 of the front chamber 510 to the low pressure inflow chamber 520 through the flow diffuser 525 . Spout assembly 530 includes a plurality of spouts or orifices 535 disposed at a slight inclination relative to horizontal. The process fluid flows out of the inflow chamber 520 through the orifice 535 in a direction having both vertical and radial fluid velocity components.

The primary fluid flow chamber 505 is bounded in its upper region by contoured side walls 560 and sloped side walls 565 . Contoured sidewalls 560 help avoid separation of fluid flow as process fluid flows out of jets 535 , particularly the uppermost jet, and up toward the surface of microelectronic workpiece 25 . After turning point 570 is exceeded, the separation of fluid flow does not substantially affect the uniformity of normal fluid flow. Accordingly, sloped sidewall 565 may generally be any shape, including the continuous shape of contoured sidewall 560 . In the embodiment described here, sidewall 565 is sloped and may be used to support one or more anodes/conductors where electrochemical processing is involved.

Treatment fluid exits the primary fluid flow chamber 505 through a substantially annular outlet 572 . Fluid from annular outlet 572 may be provided to another outer chamber for treatment, or may be recirculated through a treatment fluid supply system.

In case the treatment base 37 constitutes an electroplating reactor part, the treatment base 37 is also provided with one or more anodes. In the illustrated embodiment, the central anode 580 is disposed in the lower portion of the main fluid flow chamber 505 . If the periphery of the surface of the microelectronic workpiece 25 extends radially beyond the confines of the contoured sidewall 560, the periphery is electrically shielded from the center anode 580 and reduces plating in those areas. However, if it is desired to plate at the peripheral area, one or more additional anodes are used near the peripheral area. Here, a plurality of annular anodes 585 are disposed in a substantially concentric manner on the sloped sidewall 565 to provide plating current to the peripheral area. Another embodiment includes one or more anodes that are unshielded from the contoured sidewalls to the perimeter of the microelectronic workpiece.

Electroplating power can be provided to anodes 580 and 585 in a variety of different ways. For example, electroplating power of the same or different magnitudes may be multiplexed to anodes 580 and 585 . Alternatively, all anodes 580 and 585 may be connected together to receive the same magnitude of plating power from the same power source. Moreover, each anode 580 and 585 can be connected together to receive different levels of electroplating power to compensate for variations in electroplating film resistance. An advantage of placing the anodes 585 in close proximity to the microelectronic workpiece 25 is that a high degree of control over the radial plating film formation produced by each anode is provided.

As the treatment fluid is circulated through the treatment device, gas is entrained into the treatment fluid. These gases can form bubbles that eventually reach the diffusion layer and affect the uniformity of the surface finish of the workpiece. To address this issue, and to reduce the likelihood of air bubbles entering the primary fluid flow chamber 505, the treatment base 37 includes a number of unique features. For the center anode 580 , a Venturi flow channel 590 is formed between the lower side of the center anode 580 and the relatively low pressure region of the acceleration channel 540 . In addition to affecting the flow effect along the centerline 537, the channel also creates a Venturi effect such that process fluid located near surfaces in the lower chamber, such as the surface of the central anode 580, is drawn into the acceleration channel 540 and can assist in the removal of gas bubbles from the anode surface. More notably, the Venturi effect can form a suction flow in the middle of the surface of the microelectronic workpiece along the centerline 537 that affects the uniformity of the impinging liquid flow. Similarly, the process fluid flows radially across the upper chamber surfaces, such as the anode 585, to the annular outlet 572, thereby removing air bubbles present on these surfaces. In addition, the radial component of fluid flow on the surface of the microelectronic workpiece helps to remove air bubbles from the surface.

Diagramming fluid flow through the reactor chamber has many advantages. As shown, the fluid flow through the jets/orifices 535 is away from the surface of the microelectronic workpiece and thus does not create a localized normal fluid flow component to disturb the uniformity of the diffusion layer. Although the diffusion layer may not be perfectly uniform, any unevenness is relatively gradual. Additionally, in the case of rotating microelectronic workpieces, such non-uniformity remaining in the diffusion layer is often tolerable and consistently achieves processing goals.

It can be seen from the aforementioned reactor structure that the fluid flow perpendicular to the microelectronic workpiece has a larger magnitude near the center of the microelectronic workpiece. When the microelectronic workpiece is absent (ie, before the microelectronic workpiece is submerged in the fluid), a dome-shaped meniscus is formed. The dome-shaped meniscus helps minimize entrainment of air bubbles when the microelectronic workpiece is submerged in the processing fluid.

The fluid flow at the bottom of the main fluid flow cavity 505 created by the Venturi flow channels affects the fluid flow at its centerline. The flow rate at the centerline is difficult to achieve and control. However, the intensity of Venturi flow provides a hands-off structural change that can be used to affect this aspect of fluid flow.

Another advantage of the aforementioned reactor configuration is that it helps to avoid those gas bubbles that enter the cavity from reaching the microelectronic workpiece. For this purpose, the flow is such that the treatment liquid moves downwards just before entering the main chamber. Thus, air bubbles are retained in the front chamber and escape through the holes in the top. Additionally, air bubbles can be prevented from passing through the Venturi flow channels into the main chamber by utilizing a shield covering the Venturi flow channels (see description of the reactor embodiment shown in Figures 3-5). Also, the upward slope of the inlet channel to the front chamber (see Figure 5 and corresponding description) prevents air bubbles from entering the main chamber via the Venturi flow channel.

3-5 illustrate a particular configuration of the overall processing chamber assembly 610 that is particularly suitable for electrochemical processing of semiconductor microelectronic workpieces. Specifically, the illustrated embodiment is particularly suitable for plating a uniform material layer on the surface of a workpiece by electroplating technology.

As shown, the processing base 37 shown in FIG. 1B is comprised of a processing chamber assembly 610 and a corresponding outer cup 605 . The treatment chamber assembly 610 is disposed within the outer cup 605 such that the outer cup 605 can receive spent treatment fluid overflowing from the treatment chamber assembly 610 . Flanges 615 extend around assembly 610 to facilitate attachment to corresponding processing equipment supports.

Referring particularly to FIGS. 4 and 5, the flange of the outer cup 605 can be formed to contact or receive the rotor assembly 75 of the reactor head 30 (as shown in FIG. The plating solutions are in contact in the primary fluid flow chamber 505 . The outer cup 605 also includes a main cylindrical housing 625 in which the discharge cup 627 is disposed. Discharge cup 627 includes an outer surface having channels 629 which, together with the inner wall surface of main cylindrical housing 625, form one or more helical flow chambers 640 which may serve as outlets for process fluid. The treatment fluid overflowing from the overflow member 739 at the top of the treatment cup 35 is discharged through the helical flow chamber 640 and flows out from an outlet (not shown), where the treatment fluid is treated or replenished and returned. This configuration is particularly suitable for systems involving return flow fluids, as it helps to reduce mixing of gas with the process fluid, thereby reducing the possibility of air bubbles affecting the uniformity of the diffusion layer on the tool surface.

In the illustrated embodiment, the anterior chamber 510 is defined by the walls of a plurality of separate components. More specifically, the front cavity 510 is defined by the discharge cup 627 , the inner wall of the anode support 697 , the inner and outer walls of the mid cavity member 690 , and the outer wall of the flow diffuser 525 .

Figures 3B and 4 illustrate the manner in which the aforementioned components are combined to form a reactor. To this end, a lumen member 690 is disposed inside the discharge cup 627 and includes a plurality of legs 692 supported on its bottom wall. Anode support 697 includes an outer wall that contacts a flange disposed around the interior of discharge cup 627 . The anode support 697 also includes a slot 705 supported on and in contact with the upper portion of the flow diffuser 525 and another slot 710 supported on and in contact with the upper edge of the nozzle assembly 530 . The lumen member 690 also includes a centrally disposed reservoir 715 sized to accommodate the bottom of the spout assembly 530 . Similarly, an annular groove 725 is provided radially outside the annular reservoir 715 to facilitate contact with the lower portion of the flow diffuser 525 .

In the illustrated embodiment, the flow diffuser 525 is formed as a single component and includes a plurality of vertical slots 670 . Similarly, spout assembly 530 is also formed as a single component and includes a plurality of horizontal slots forming spout 535 .

Anode support 697 includes a plurality of annular grooves sized to receive corresponding annular anode assemblies 785 . Each anode assembly 785 includes an anode 585 (preferably made of platinized titanium or other inert metal) and a conduit 730 protruding from the middle of the anode 585 through which a metal conductor is disposed and makes each assembly 785 The anode 585 is in electrical contact with an external power source. The conduit 730 extends entirely through the treatment chamber assembly 610 and is secured to the bottom of the treatment chamber assembly 610 by a corresponding fitting 733 . In this configuration, the anode assembly 785 can effectively push down on the anode support 697 to clamp the flow diffuser 525 , spout assembly 530 , lumen member 690 and discharge cup 627 to the bottom of the outer cup 605 737. This makes the processing chamber 610 easy to assemble and disassemble. However, other means may be used to hold the chamber components together and to connect the anode to the power supply.

The illustrated embodiment also includes an overflow member 739 that is removably snapped or otherwise conveniently secured to the upper exterior of the anode support member 697 . As shown, the overflow member 739 includes a flange 742 forming an overflow device over which the treatment fluid flows into the helical flow chamber 640 . Overflow member 739 also includes a transversely extending flange 744 extending radially inwardly and forming an electric field shield over all or part of one or more anodes 585 . Since the overflow member 739 can be easily removed and replaced, the processing chamber assembly 610 can be easily reconfigured and adapted to provide different electric field configurations. This different electric field configuration is particularly suitable where the reactor must be configured to handle workpieces of more than one size or shape. Additionally, this allows the reactor to be configured to suit workpieces of the same size but with different plating area requirements.

The anode support 697 of the anode 585 in the corresponding position constitutes the contoured side wall 560 and the sloped side wall 565 shown in FIG. 2 . The lower region of the anode support 697 is contoured as described above to define the upper inner wall of the antechamber 510 and preferably includes one or more gas outlets 665 disposed therethrough to vent gas bubbles from the antechamber 510 to the external environment.

Referring particularly to FIG. 5 , fluid inlet 515 is defined by an inflow fluid guide 810 secured to lumen member 690 by one or more fasteners 815 . The inflow fluid guide 810 includes a plurality of slots 817 that can guide fluid received by the fluid inlet 515 into the area below the lumen member 690 . The slot 817 of the illustrated embodiment is defined by upwardly sloping walls 819 . Treatment fluid exiting the slot 817 flows therefrom to one or more further slots 821 also defined by upwardly sloping walls.

The central anode 580 includes an electrical connecting rod 581 extending to the outside of the processing chamber assembly 610 through a central hole formed in the spout assembly 530 , the lumen member 690 and the inflow fluid guide 810 . The Venturi flow channel region 590 shown in FIG. 2 is constituted in FIG. 5 by a vertical slot 823 passing through the discharge cup 627 and the bottom wall of the spout assembly 530 . As shown, inflow guide 810 and upwardly sloped wall 819 extend radially beyond shielded vertical slot 823 so that any air bubbles entering the inlet exit through upward slot 821 rather than vertical slot 823 .

The foregoing reactor assemblies can be conveniently combined into a processing apparatus capable of performing various processes on workpieces, such as semiconductor microelectronic workpieces. One such processing equipment is the LT-210 ^(TM) electroplating unit commercially available from Semitool, Inc., of Kalispell, Montana. Figures 6 and 7 illustrate such a combined arrangement. The device shown in FIG. 6 includes a plurality of processing devices 1610 . Preferably, these treatment units include one or more cleaning/drying units and one or more electroplating units (including one or more of the electroplating reactors described above), although immersion chemical treatment units of the present invention may also be used. The apparatus preferably also includes a thermal processing apparatus 1615 comprising at least one thermal reactor suitable for rapid thermal processing (RTP).

Workpieces are transferred between the processing unit 1610 and the RTP unit 1615 using one or more mechanical transport mechanisms 1620 that are linearly movable along a central rail 1625 . One or more treatment units 1610 are also provided with means suitable for cleaning in place. Preferably, all processing devices and mechanical transfer mechanisms are located in an enclosure containing filtered air under positive pressure to limit airborne contaminants that may reduce the effectiveness of microelectronic workpiece processing.

Fig. 7 shows another embodiment of processing equipment, wherein RTP device 1635 is disposed in section 1630, which includes at least one thermal reactor and can be combined into one processing device train. Unlike the embodiment shown in FIG. 6 , in this embodiment at least one thermal reactor is handled by a dedicated robotic mechanism 1640 . The dedicated manipulator mechanism 1640 accepts workpieces delivered by the mechanical delivery mechanism 1620 . Transfers can be made through an intermediate staging door/area 1645. Thus, the RTP portion 1630 of the processing facility can be hygienically separated from the rest of the processing facility. In addition, with this construction, the illustrated annealing heat treatment apparatus can be formed as a single unit to fix and improve the quality of existing apparatus units. In addition to or instead of RTP device 1635 , other types of processing devices may be provided at portion 1630 .

Various modifications can be made to the foregoing systems without departing from the underlying teachings described above. Although the present invention has been described in detail above with reference to one or more specific embodiments, it is obvious that those skilled in the art can make various modifications without departing from the scope and spirit of the present invention.

Claims (13)

1. An electrochemical processing device for a microelectronic workpiece, comprising: a head assembly having a workpiece support including a contact assembly having a plurality of electrical contacts configured to engage a circumferential portion of the workpiece; a treatment chamber having an overflow at a first level, the overflow configured to define a surface level of a flow of electrochemical treatment solution to treat the surface of the workpiece; A first electrode in the processing chamber, a second electrode in the processing chamber concentric with the first electrode, and an insulator structure in the processing chamber, wherein a portion of the insulator structure is located below the first electrode of the overflow. a second height of height and located between the first and second electrodes; and An overflow collector is provided outside the processing chamber to receive the processing solution flowing from above the overflow member. 2. The apparatus of claim 1, further comprising a plurality of jets configured to provide flow of treatment liquid to the overflow, wherein the jets are configured to provide vertical and radial flow components, the The components combine to produce a substantially uniform normal flow component radially across the surface of the workpiece. 3. The device of claim 2, wherein at least some of the plurality of jets are substantially horizontal orifices. 4. The device according to claim 1, wherein the first electrode comprises a first circular conductive part, and the second electrode comprises a second circular conductive part, the second circular conductive part is electrically conductive with the first circular conductive part. The parts are concentric. 5. The apparatus of claim 4, wherein the first circular conductive element comprises a disk and the second circular conductive member comprises a conductive ring. 6. The apparatus of claim 4, wherein the first circular conductive member comprises a first conductive ring and the second circular conductive member comprises a second conductive ring. 7. The apparatus of claim 1, further comprising a field shield between the workpiece support and the at least one electrode, wherein the field shield is configured to shield at least a portion of the workpiece from at least a portion of the one electrode. 8. The apparatus of claim 7, wherein the field shield comprises a circular ring aligned with a circumferential portion of the workpiece support. 9. The apparatus of claim 7, wherein the field shield comprises a flange extending transversely with respect to a central axis of the processing chamber. 10. The apparatus of claim 7, wherein the field shield comprises a horizontal flange extending inwardly over a portion of the outer electrode. 11. The device of claim 1, wherein the first and second electrodes are independently operable relative to each other. 12. The apparatus of claim 1, wherein the insulator structure includes an electrode support configured to mechanically support the first and second electrodes. 13. The apparatus of claim 1, wherein the insulator structure includes a central opening providing a fluid flow path through which the electrochemical treatment solution flows upwardly to the overflow.

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