CN1610769A - Plating device - Google Patents

Abstract

The invention provides an electroplating device, which is characterized by comprising: an electroplating bath (40) for holding the plating solution (10); an anode (56) which is immersed in the plating solution (10) in the plating tank (40) and is disposed therein; an adjustment plate (60) provided between the anode (56) and a substrate (W) provided so as to face the anode (56); and a plating power source (24) for applying current between the anode (56) and the substrate (W) to perform plating; the adjusting plate (60) is installed in a state of blocking the plating solution (10) stored in the plating tank (40) from the anode and the object to be plated, and is internally provided with a through hole group (68) composed of a plurality of through holes (66).

Description

Plating device

technical field

The present invention relates to an electroplating apparatus for performing electroplating on the surface to be plated such as a substrate (substrate), and more particularly to an electroplating apparatus for fine wiring grooves and Form a plated film on holes, via holes, through holes, and resist openings, or form bumps (protruding electrodes) that are electrically connected to package electrodes on the surface of a semiconductor wafer.

Background technique

For example, in TAB (Tape Automated Bonding: Carrier Tape Automatic Bonding) and FC (FlipChip: Flip Chip Method), the widely used method is to form a wire on a predetermined part (electrode) of the semiconductor chip surface where wiring is formed. Gold, copper, solder or lead-free solder, and nickel, and bump-shaped connection electrodes (bumps) stacked in multiple layers are electrically connected to package electrodes and TAB electrodes through the bumps. The methods for forming such protrusions include various methods such as electroplating, evaporation deposition, printing, and spherical protrusions. With the increase in the number of I/Os and the miniaturization of the pitch of semiconductor chips, a large number of electroplating methods that can achieve miniaturization and relatively stable performance are used.

If the electroplating method is used, it is easy to obtain a high-purity metal film (coating film), and not only the film forming speed of the metal film is faster, but also the thickness of the metal film is easy to control.

FIG. 37 shows an example of a conventional plating apparatus employing a so-called flip chip method. This electroplating apparatus has electroplating tank 12 and substrate holder 14, wherein, the inside of electroplating tank 12 is equipped with plating solution 10 and is open above, and substrate holder 14 can support substrate W that its surface (to be plated) is downward (inverted) installed), it can be easily loaded and unloaded and moved up and down freely. An anode 16 is arranged horizontally at the bottom of the plating tank 12 , an overflow tank 18 is provided around the upper part, and a plating solution supply nozzle 20 is connected to the bottom of the plating tank 12 .

In this way, the substrate W, which is kept horizontal by the substrate holder 14, is arranged at a position covering the open upper end of the electroplating tank 12. The plating solution 10 is supplied, the plating solution 10 is overflowed from the upper part of the electroplating tank 12, the plating solution 10 is brought into contact with the surface of the substrate W held by the substrate holder 14, and at the same time, the anode 16 is connected to the power supply through the wire 22a. On the anode of 24; Substrate W is respectively connected on the cathode of electroplating power source 24 by wire 22b. Then, using the potential difference between the substrate W and the anode 16, the metal ions in the plating solution 10 accept electrons from the surface of the substrate W, and deposit metal on the surface of the substrate W to form a metal film.

If this electroplating device is adopted, by adjusting the size of the anode 16, the distance and potential difference between the anode 16 and the substrate W, and the supply speed of the plating solution 10 supplied from the plating solution supply nozzle 20, etc., the The thickness uniformity of the metal film formed on the surface of the substrate W is adjusted to a certain extent.

FIG. 38 shows an example of a conventional plating apparatus employing a so-called dip method. This electroplating apparatus has plating tank 12a and substrate support 14a, wherein, the inside of plating tank 12a is equipped with plating solution 10, and substrate support 14a can support substrate W to make its peripheral portion watertight, and surface (to be plated surface) exposes, It can be moved up and down freely with ease of loading and unloading. Inside the electroplating tank 12, the anode 16a is supported by the anode holder 26 and arranged vertically, and when the substrate W supported by the substrate holder 14a is arranged at a position opposite to the anode 16a, the center hole 28a is formed of a dielectric material. The adjustment plate 28 is arranged between the anode 16a and the substrate W.

Like this, this anode 16, substrate W and adjusting plate 28 are dipped in the plating solution in the electroplating bath 12a, simultaneously, anode 16a is connected on the anode of electroplating power source 24 by lead wire 22a, substrate W is connected respectively by lead wire 22b. Connect to the cathode of the electroplating power supply 24. Then, metal is deposited on the surface of the substrate W to form a metal film as in the above case.

If this electroplating device is used, an adjustment plate 28 having a central hole 28a is arranged between the anode 16a and the substrate W arranged at a position opposite to the anode 16a, and the adjustment plate 28 adjusts the temperature in the electroplating tank 12a. The potential distribution means that the thickness distribution of the metal film formed on the surface of the substrate W can be adjusted to some extent.

Fig. 39 is another example showing an example of a conventional plating apparatus employing a so-called immersion method. The difference between this electroplating apparatus and the electroplating apparatus shown in FIG. 38 is that there is no adjustment plate, and there is a ring-shaped pseudo-cathode (pseudo-electrode) 30, and the pseudo-cathode 30 is arranged around the substrate W. In this state The substrate W is supported by the substrate holder 14a, and the dummy electrode 30 is connected to the cathode of the plating power source 24 through the wire 22c during the plating process.

If this electroplating apparatus is used, by adjusting the potential of the pseudo cathode 30, the thickness uniformity of the metal film formed on the surface of the substrate W can be improved.

On the other hand, for example, when forming a metal film (plated film) for wiring and bumps, etc. on the surface of a semiconductor substrate (wafer), it is required that the surface shape and film thickness of the metal film formed across the entire substrate be uniform. unanimous. In the high-density mounting technologies such as SOC (System On Chip) and WL-CSP (Wafer Level Chip Size Package) in recent years, the requirement for high-precision uniformity is increasing. It is difficult to form Metal film compatible with high-precision uniformity.

That is to say, if electroplating is performed on the substrate W with the electroplating apparatus shown in FIG. 37, the metal film formed is greatly affected by the flow of the plating solution. The central part of the substrate W where metal ions are sufficiently supplied has a thicker metal film P than the surrounding part. The thickness of the metal film P is larger in the peripheral portion of the sheet W than in the central portion. And, if utilizing the electroplating apparatus shown in Fig. 38 to carry out electroplating on the substrate, then although utilize the adjusting plate that has central hole in the center to improve potential distribution, can improve the film thickness distribution of the metal film on the whole substrate to a certain extent. However, the film thickness distribution of the formed metal film P appears wavy in which the thickness of the metal film P increases on the central portion and the peripheral portion of the substrate W as shown in FIG. 40c. Furthermore, when performing electroplating with the electroplating apparatus shown in FIG. 39, it is not only difficult to adjust the voltage of the pseudo-electrode (pseudo-cathode), but also the metal film attached to the surface of the pseudo-electrode must be removed, which is troublesome.

In general, in conventional electroplating apparatuses, due to the surface potential distribution formed on the surface of the substrate, the film thickness of the surrounding part of the substrate as the power receiving part increases, and the film pressure distribution on the surface of the substrate presents a U-shape (see FIG. 40B ). , becoming one of the important reasons for damaging the uniformity of film thickness. In order to suppress this phenomenon, the metal ions supplied to the surface of the substrate are adjusted, that is to say, the flow of the plating solution is adjusted, or the potential distribution on the surface of the substrate and the electric field in the electroplating tank are controlled and adjusted. The method is to use the adjustment plate and the pseudo-electrode.

The adjustment of the plating solution flow and the adjustment with the adjustment plate are to concentrate the metal ions and the electric field to the central part of the substrate, so that the coating film at the central part of the substrate is thickened, so that the thickness distribution of the coating film on the entire substrate is adjusted to The W-shape minimizes the film variation from the average film thickness (see Figure 40c). Therefore, the adjustment of the plating solution flow, the position of the adjustment plate and the selection and fine adjustment of the size of the central core hole all have a great influence on the uniformity of the film thickness, and the uniformity of the film thickness has a great relationship with the tuning situation. .

On the other hand, the method of using the pseudo-electrode is to expand the voltage distribution on the surface of the substrate only to the area including the pseudo-electrode on the periphery of the substrate, and to concentrate the increase of the film thickness of the power receiving part on the pseudo-electrode, A very uniform film thickness is obtained on the substrate surface. In addition, equivalent to the method of using the pseudo-electrode, there is also a method of using the pattern near the peripheral portion in the substrate as a "waste chip" to function as a pseudo-electrode. Using the method of pseudo-electrode, its voltage adjustment has a decisive effect on the uniformity of film thickness. In addition, the metal film (plated film) adhering to the pseudo-electrode must be periodically removed, and this operation is complicated. Furthermore, if the patterns near the peripheral portion in the substrate are used as "waste chips" to make them function as pseudo-electrodes, the effective chips per substrate will decrease, so the production efficiency will decrease.

Any of the above methods, from the result, is to adjust the film thickness distribution to obtain a uniform film thickness distribution. Therefore, it is not by actively controlling and adjusting the electric field of the electroplating tank formed between the anode and the cathode to be plated to control and improve the potential distribution on the surface of the plated body, so as to essentially eliminate and improve the potential distribution of the plated body. The film thickness distribution of the coating film tends to be U-shaped.

Contents of the invention

The present invention is a solution proposed in view of the above situation, and its purpose is to provide an electroplating device, which has a relatively simple structure and does not require complicated operation methods and settings, so that a more uniform film thickness of metal can be formed on the entire object to be plated. film (coating).

In order to achieve the above object, the electroplating device is characterized in that it has: an electroplating tank, which is used to maintain the plating solution; an anode, which is immersed in and arranged in the plating solution in the above-mentioned electroplating tank; an adjustment plate, which is arranged on the above-mentioned anode, and set Between the body to be plated opposite to the anode; and the electroplating power supply, which is used to conduct electricity between the anode and the body to be plated; the adjustment plate is set to block the plating solution in the above-mentioned electroplating tank preserved in On the side of the anode and the body to be plated, a through-hole group consisting of a plurality of through-holes is provided inside.

In this way, the electric field is leaked into a plurality of through holes provided inside the adjustment plate provided in the electroplating tank, and the leaked electric field is uniformly expanded, so that the potential distribution across the entire surface of the object to be plated can be made more uniform. Further improve the in-plane uniformity of the metal film formed on the object to be plated. In addition, the passage of the plating solution through the plurality of through holes provided in the adjustment plate provided in the plating tank can be controlled, so that the metal film thickness formed on the object to be plated due to the influence of the flow of the plating solution can be prevented. .

According to a preferred embodiment of the present invention, the electroplating apparatus is characterized in that the through-hole group includes a plurality of long holes extending in one direction as linear or arc-shaped slits. In this way, the through hole is formed as a slit-shaped long hole, so that electric field leakage can be promoted while controlling the flow of the plating solution in the long hole. The width of the long hole is, for example, 0.5 to 20 mm, preferably 1 to 15 mm, and the length is determined by the shape of the object to be plated.

According to a preferred embodiment of the present invention, the electroplating apparatus is characterized in that the group of through holes includes a plurality of cross holes extending in a cross shape in the vertical and horizontal directions.

According to a preferred embodiment of the present invention, the electroplating device is characterized in that the through-hole group is formed by any combination of a plurality of fine holes, a plurality of holes with different diameters, or elongated holes extending in a slit shape. In this way, since the through-hole group is formed by a combination of a plurality of fine holes or a plurality of holes with different diameters, production efficiency can be improved. In this case, the diameter of the fine hole and the small hole (peripheral hole) is, for example, 1 to 20 mm, preferably 2 to 10 mm, and the diameter of the large hole (central hole) is, for example, 50 to 300 mm, preferably 30 to 100 mm. .

Preferably, the group of through-holes is formed in a region having a substantially similar shape to the object to be plated across the entire area of the adjustment plate that faces the object to be plated. By forming the through-hole group in this way, it is possible to form a metal film having good film thickness uniformity in all directions of the object to be plated.

Preferably, a stirring mechanism for stirring the plating solution held in the plating tank is provided between the object to be plated and the adjustment plate. In this way, since the plating solution between the object to be plated and the adjustment plate is stirred by the stirring mechanism during the electroplating process, sufficient ions can be supplied to the object to be plated more uniformly, and a more uniform film thickness can be formed more quickly. metal film.

Preferably, the stirring mechanism is a paddle-type stirring mechanism having a paddle that reciprocates parallel to the object to be plated. In this way, in the electroplating process, the plating solution is stirred by the stirring rod reciprocating in parallel with the object to be plated, so that sufficient ions can be uniformly supplied to the object to be plated while canceling the directionality of the flow of the plating solution.

According to a preferred embodiment of the present invention, the electroplating apparatus is characterized in that the anode and the adjustment plate are arranged in a vertical direction. In this way, it is possible to provide a good plating apparatus with a small installation area and easy maintenance.

Another electroplating device of the present invention is characterized in that it has: an electroplating tank, which is used to maintain the plating solution; an anode, which is immersed in and arranged in the plating solution in the above-mentioned electroplating tank; an adjustment plate, which is arranged on the above-mentioned anode, and Between the body to be plated opposite to the anode; and the electroplating power supply, which is used to carry out electroplating between the above-mentioned anode and the body to be plated; the above-mentioned adjustment plate is set to store the plating solution in the above-mentioned electroplating tank The above-mentioned anode and the object to be plated side are blocked, and a plating solution flow path is provided inside to allow the plating solution to flow while passing the electric field uniformly.

In this way, the electric field formed between the anode and the object to be plated in the electroplating tank passes evenly along the flow path of the plating solution, and will not leak to the outside. Therefore, the distortion (distortion) and deviation of the electric field can be adjusted and corrected, so that the electric field is distributed in the It is more uniform across the entire surface of the object to be plated, and the in-plane uniformity of the metal film formed on the object to be plated can be further improved.

The length of the plating solution flow path is appropriately set according to the shape of the electroplating tank, the distance between the anode and the object to be plated, etc., generally set to 10-90mm, preferably set to 20-75mm, most preferably set to 30~60mm.

Preferably, the above-mentioned plating solution flow path is formed on the inner peripheral surface of the cylindrical body or the rectangular block. In this way, the structure can be simplified.

Preferably, a plurality of through holes having a size capable of preventing electric field leakage are provided on the peripheral wall of the cylindrical body. In this way, while preventing electric field leakage, the plating solution can flow through the through holes provided on the peripheral wall of the cylindrical body, so that the concentration of the plating solution inside and outside the cylindrical body can be prevented from being deviated. The shape of the through hole may be, for example, a thin hole or a slit-shaped long hole, a cross hole extending in the vertical and horizontal directions, and a combination of these shapes.

According to a preferred embodiment of the present invention, the electroplating device is characterized in that: between the above-mentioned body to be plated and the above-mentioned adjustment plate, or at least one of the above-mentioned cathode and the above-mentioned adjustment plate, there is a plating device for holding in the above-mentioned electroplating tank. Stirring mechanism for stirring liquid. In this way, since the plating solution is stirred during the electroplating process, the concentration of the plating solution containing various metal ions and various additives in the electroplating tank can be made uniform in the electroplating tank, and the uniform concentration can be supplied to the object to be plated. Therefore, a metal film with a more uniform film thickness can be formed more rapidly.

Preferably, the electroplating apparatus is characterized in that the stirring mechanism is a paddle-type stirring mechanism having a paddle that reciprocates parallel to the object to be plated.

The agitation mechanism may be a plating solution spraying type agitation mechanism having a plurality of plating solution spraying nozzles for spraying the plating solution toward the object to be plated. In this way, the plating solution is sprayed from a plurality of plating solution injection nozzles to the object to be plated, so the plating solution in the electroplating tank can be stirred to make the concentration of the plating solution uniform, and at the same time, the plating solution can be fully supplied to the object to be plated. Various components, more quickly form a metal film with a more uniform film thickness.

The electroplating device is characterized in that the plating solution flow path may be provided inside the adjustment plate so as to be integrated with the adjustment plate. In this way, since the adjustment plate is thicker and the through hole is provided inside the adjustment plate, the through hole can also be used as the flow path of the plating solution.

Another electroplating device of the present invention is characterized in that it has: an electroplating tank, which is used to maintain the plating solution; an anode, which is immersed in and arranged in the plating solution in the above-mentioned electroplating tank; an adjustment plate, which is arranged on the above-mentioned anode, and Between the body to be plated opposite to the anode, the state of setting is to block the plating solution stored in the above-mentioned electroplating tank on the side of the anode and the body to be plated, and the inside is provided to allow the electric field to pass evenly and the plating solution to flow through. The plating solution flow path; the electroplating power supply, which is used to conduct electroplating between the above-mentioned anode and the plated body; the electric field adjustment ring, which is located at the end of the above-mentioned plated body side of the above-mentioned plating solution flow path, and is used to adjust the electroplating The electric field at the periphery of the body.

In this way, the electric field at the peripheral portion of the body to be plated is adjusted with the electric field adjustment ring, so the electric field formed between the anode and the body to be plated can be made more uniform on the entire surface of the body to be plated, that is, as The edge portion of the object to be plated in the power receiving portion can also be more uniform, and the in-plane uniformity of the metal film formed on the object to be plated can be further improved.

The shape of the electric field adjustment ring is appropriately set according to the shape of the electroplating tank and the object to be plated, the distance between the anode and the object to be plated, etc., generally its width is set to 1 ~ 20mm, preferably 3 ~ 17mm, the best Set to 5 ~ 15mm.

The gap between the electric field adjusting ring and the object to be plated is generally set at 0.5 to 30 mm, preferably at 1 to 15 mm, most preferably at 1.5 to 6 mm.

According to a preferred embodiment of the present invention, the plating solution flow path is formed on the inner peripheral surface of the cylindrical body, and the electric field adjustment ring is connected to an end portion of the cylindrical body on the object-to-be-plated side.

The plating solution flow path may be formed on the inner peripheral surface of the cylindrical body, and the electric field adjustment ring is separated from the cylindrical portion and provided at the end of the cylindrical body on the side of the object to be plated. In this way, when the plating solution flow path is formed, the cylindrical body and the electric field adjustment ring are separated, so that the selection range can be expanded.

The plating solution flow path may be formed on the inner peripheral surface of the cylindrical body, and the electric field adjusting ring may be formed on the end surface of the cylindrical body on the object-to-be-plated side. Thus, the number of parts can be reduced.

Description of drawings

FIG. 1 is an overall layout view of an electroplating treatment apparatus including an electroplating apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic diagram of a transfer robot provided in a plating space of the plating treatment apparatus shown in FIG. 1 .

Fig. 3 is a schematic cross-sectional view of a plating device included in the plating treatment device shown in Fig. 1 .

Fig. 4 is a schematic perspective view of main parts of the plating apparatus shown in Fig. 3 .

Fig. 5 is a plan view of an adjustment plate included in the plating apparatus shown in Fig. 3 .

FIG. 6 is a schematic view of the state of the metal film when the metal film (plated film) is formed by the plating apparatus shown in FIG. 3 .

7A to 7E are cross-sectional views showing the process of forming bumps (protruding electrodes) on a substrate in order of steps.

Fig. 8 is a plan view showing another example of an adjustment plate.

Fig. 9 is a plan view showing another example of the adjustment plate.

Fig. 10 is a plan view showing another example of the adjustment plate.

Fig. 11 is a plan view showing another example of an adjustment plate.

Fig. 12 is a plan view showing another example of the adjustment plate.

Fig. 13 is a plan view showing another example of the adjustment plate.

Fig. 14 is a plan view showing another example of the adjustment plate.

Fig. 15 is a plan view showing another example of an adjustment plate.

Fig. 16 is a plan view showing another example of the adjustment plate.

Fig. 17 is a plan view showing another example of the adjustment plate.

Fig. 18 is a plan view showing another example of the adjustment plate.

Fig. 19 is a plan view showing another example of the adjustment plate.

20 is a schematic cross-sectional view showing a plating apparatus according to another embodiment of the present invention.

Fig. 21A is a perspective view showing an adjustment plate and a cylindrical body included in the plating apparatus shown in Fig. 20 .

Fig. 21B is a front view showing Fig. 21A.

FIG. 22 is a schematic view showing the state of the metal film when the metal film (plating film) is formed using the plating apparatus shown in FIG. 20 .

23 is a schematic cross-sectional view showing a plating apparatus according to another embodiment of the present invention.

Fig. 24A is a perspective view showing another example of an adjustment plate and a cylindrical body.

Fig. 24B is a front view showing Fig. 24A.

Fig. 25A is a perspective view showing another example of an adjustment plate and a cylindrical body.

Fig. 25B is a front view showing Fig. 25A.

Fig. 26A is a perspective view showing another example of an adjustment plate and a cylindrical body.

Fig. 26B is a front view showing Fig. 26A.

Fig. 27A is a perspective view showing another example of an adjustment plate and a cylindrical body.

Fig. 27B is a front view showing Fig. 27A.

Fig. 28 is a schematic cross-sectional view showing a plating apparatus according to another embodiment of the present invention.

Fig. 29A is a perspective view showing an adjustment plate, a cylinder and an electric field adjustment ring included in the electroplating device shown in Fig. 28,

Fig. 29B is a front view showing Fig. 29A.

Fig. 30 is a schematic view showing the state of the metal film when the metal film (plating film) is formed by the plating apparatus shown in Fig. 28 .

Fig. 31 is a schematic cross-sectional view showing a plating apparatus according to another embodiment of the present invention.

Fig. 32A is a perspective view showing another example of an adjustment plate, a cylindrical body, and an electric field adjustment ring.

Fig. 32B is a front view showing Fig. 32A.

Fig. 33A is a perspective view showing another example of an adjustment plate, a cylindrical body, and an electric field adjustment ring.

Fig. 33B is a front view showing Fig. 33A.

Fig. 34A is a perspective view showing another example of an adjustment plate, a cylindrical body, and an electric field adjustment ring.

Fig. 34B is a front view showing Fig. 34A.

Fig. 35A is a perspective view showing another example of an adjustment plate, a cylindrical body, and an electric field adjustment ring.

Fig. 35B is a front view showing Fig. 35A.

Fig. 36 is a schematic sectional view showing a plating apparatus according to another embodiment of the present invention.

Fig. 37 is a schematic cross-sectional view showing an example of a conventional plating apparatus.

Fig. 38 is a schematic perspective view showing another example of a conventional plating apparatus.

Fig. 39 is a schematic cross-sectional view showing still another example of a conventional plating apparatus.

40A to 40C are schematic diagrams showing different states of metal films (plating films) formed by conventional plating apparatuses.

Detailed ways

Embodiments of the present invention will be described in detail below with reference to the drawings. In addition, in the above-mentioned embodiment, the example which used a substrate, such as a semiconductor wafer, as a to-be-plated body was shown.

FIG. 1 is an overall layout view of an electroplating treatment apparatus including an electroplating apparatus according to an embodiment of the present invention. This electroplating treatment device continuously and automatically carries out the electroplating whole process of the pretreatment of the substrate, electroplating treatment and electroplating post-treatment, and the inside of the device frame 110 with the exterior panel installed is divided into the electroplating treatment and the electroplating treatment of the substrate by a partition 112. The plating space 116 is used for the treatment of substrates to which the plating solution is attached, and the cleaning space 114 is used for processing other than that, that is, the treatment not directly involving the plating solution. And, in the partitioned part where the plating space 116 and the cleaning space 114 are separated by the partition 112, two substrate holders 160 (see FIG. The loading and unloading table 162 serves as a substrate delivery and receiving section for loading and unloading substrates between the respective substrate holders 160 . A loading and unloading port 120 is connected to the cleaning space 114 for placing a substrate cassette containing substrates, and an operation panel 121 is provided on the device frame 110 .

Inside the cleaning space 114 , positioners 122 , two washing/drying devices 124 , and a pretreatment device 126 are arranged at four corners thereof. The positioner 122 is used to align the position of the positioning surface or the notch of the substrate in a predetermined direction. Two cleaning/drying devices 124 are used to clean the electroplated substrates and spin them at high speed to dry them. Pretreatment device 126 is used for carrying out the pretreatment of substrate, for example, sprays pure water to substrate surface (to be plated surface), cleans substrate surface with pure water, and carries out wetting with pure water to improve hydrophilicity Wash pretreatment. Furthermore, at the roughly central positions of these processing devices, that is, the positioner 122, the washing/drying device 124 and the pre-processing device 126, a first transfer robot 128 is arranged for processing the processing devices 122, 124, 126, the above-mentioned bases, etc. The substrates are transported and received between the wafer loading and unloading table 162 and the substrate cassette placed at the loading and unloading port 120 .

Here, the positioner 122, the cleaning/drying device 124, and the preprocessing device 126 arranged in the cleaning space 114 hold and process the substrate with the horizontal state with the surface upward. The transfer robot 128 holds the substrate in a horizontal state with the surface upward, and carries out transfer and transfer of the substrate.

In the plating space 116, arranged in order from the side of the partition 112: the stocker 164 for storing and temporarily placing the substrate holder 160, and the surface of the thin layer formed on the surface of the substrate by using a chemical solution such as sulfuric acid or hydrochloric acid. The oxide film with large resistance is corroded and removed by the activation treatment device 166, the first water washing device 168a for washing the substrate surface with pure water, the electroplating device 170 for electroplating treatment, the second water washing device 168b, and the electroplating treatment After the substrate is subjected to the air blowing device 172 for dewatering. In addition, two second transfer robots 174a and 174b that can move freely along rails 176 are arranged on the side surfaces of these devices. The second transport robot 174a of the one side transports the substrate holder 160 between the substrate loading and unloading table 162 and the stocker 164, and the second transport robot 174b of the other side transports the substrate holder 160 between the stocker 164, the activation treatment device 166, the first water washing The substrate holder 160 is conveyed among the apparatus 168a, the plating apparatus 170, the second water washing apparatus 168b, and the blowing apparatus 172.

The second transfer manipulators 174a, 174b, as shown in FIG. 2, have a body 178 extending vertically, and an arm 180 that can move up and down along the body 178 and can rotate freely around the axis. 180 is provided with two substrate holder holding parts 182 which can attach and detach the substrate holder 160 and hold them side by side. Here, the substrate holder 160 holds the substrate W in a state where the surface is exposed and the peripheral portion is sealed, and the substrate W is detachable.

The stocker 164, the activation treatment device 166, the water washing devices 168a, 168b and the electroplating device 170 hook the outwardly protruding protrusions 160a provided on the two ends of the substrate holder 160, so that the substrate holder 160 A hanging state is formed in the vertical direction. In addition, the activation treatment device 166 has two activation treatment tanks 183 that hold the chemical solution inside. As shown in FIG. The arm bar 180 of the manipulator 174b is lowered, and the upper end of the substrate support 160 in the activation treatment tank 183 is fished and hung as required, so that the substrate support 160 and the substrate W are immersed in the activation treatment tank 183 together. In the liquid medicine, the activation treatment is carried out.

Similarly, in the water washing devices 168a, 168b, there are two water washing tanks 184a, 184b each holding pure water inside, and in the electroplating device 170, there are respectively a plurality of electroplating tanks 186 holding a plating solution inside. The substrate holder 160 is immersed together with the substrate W in the pure water in the washing tanks 184a and 184b or the plating solution in the plating tank 186 to perform washing treatment or plating treatment. Then, the air blowing device 172 lowers the arm 180 of the second transfer robot 174b holding the substrate holder 160 on which the substrate W is mounted in a vertical state, and blows air to the substrate W mounted on the substrate holder 160. or an inert gas to blow off the liquid adhering to the substrate holder 160 and the substrate W for dehydration and flushing of the substrate.

Each electroplating tank 186 of the electroplating apparatus 170, as shown in FIG. 3 and FIG. The peripheral part and the surface (surface to be plated) are exposed.

Overflow tanks 46 are provided on both sides of the electroplating tank 186 for receiving the plating solution 10 overflowing from the upper end of the overflow weir 44 of the electroplating tank 186 , and the overflow tank 46 and the electroplating tank 168 are connected by a circulation pipe 48 . Furthermore, a circulation pump 50 , a thermostat 52 and a filter 54 are attached to the inside of the circulation pipe 48 . Therefore, along with the driving of the circulation pump 50, the plating solution 10 supplied to the electroplating tank 186 fills the inside of the electroplating tank 186, then overflows from the overflow weir 44, flows into the overflow tank 46, and returns to the circulation pump 50. cycle inside.

Inside the electroplating tank 186, the circular anode 56 along the shape of the substrate W is held on the anode support 58 and arranged vertically. When the electroplating tank 186 is filled with the plating solution 10, the anode 56 is immersed in the plating solution 10. middle. And, the position between the anode 56 and the substrate support 160 is provided with an adjustment plate 60, which is used to divide the inside of the electroplating tank 186 into the anode side chamber 40a and the substrate side chamber 40b, and keeps the plating solution 10 in the electroplating tank 186 The partition is on the anode side and the substrate side.

Between the substrate holder 160 and the adjustment plate 60, a stirring rod type stirring mechanism 64 is arranged, wherein there are a plurality of downwardly hanging stirring rods 62, and the stirring rods 62 are positioned inside the plating solution 10 in the substrate side chamber 40b, and The substrate W held on the substrate holder 160 reciprocates in parallel to agitate the plating solution in the substrate side chamber 40b.

The adjustment plate 60 has a thickness of, for example, about 0.5 to 10 mm, and is made of a dielectric made of a resin material such as PVC, PP, PEEK, PES, HT-PVC, PFA, or PTFE. In addition, in a predetermined area inside the adjustment plate 60, that is, when the substrate W is held by the substrate holder 160 and placed at a predetermined plating position in the plating tank 186, the surface facing the substrate W is crossed. In almost the entire range of the region, and in a circular region similar to the substrate W, a through-hole group 68 composed of a plurality of through-holes 66 is provided.

Here, for example, as shown in FIG. The area is arranged in a straight line and side by side, thus constituting the through hole group 68 . The width of the through hole (long hole) 66 is generally 0.5 to 20 mm, preferably 1 to 15 mm, and its length is arbitrarily set according to the size (diameter) of the substrate W. As shown in FIG.

In this way, a through-hole group 68 composed of a plurality of through-holes 66 is provided inside the adjustment plate 60, and when the electroplating process is performed, the electric field leaks in each through-hole 66, and the leaked electric field spreads uniformly, so that the electric field across the entire base The potential distribution on the surface of the sheet W (the surface to be plated) is more uniform, and the in-plane uniformity of the metal film formed on the surface of the substrate W can be further improved. And, the plating solution 10 passes through the plurality of through holes 66 provided in the inside of the adjustment plate 60 provided in the electroplating tank 186. Therefore, it is possible to prevent the The thickness of the metal film formed on the surface of the substrate W is uneven.

In particular, since the through hole 66 is a slit-shaped long hole, the flow of the plating solution 10 in the through hole (long hole) 66 can be controlled and electric field leakage can be promoted. Furthermore, a through-hole group consisting of a plurality of through-holes 66 is formed across almost the entire region of the adjustment plate 60 facing the surface of the substrate W and in a circular region having a shape similar to that of the substrate W. 68, so it is possible to form a metal film having good film thickness uniformity in all directions on the surface of the substrate W.

If this electroplating apparatus 170 is used, first, the electroplating tank 186 is filled with the plating solution 10 as described above, and the plating solution 10 is circulated. In this state, the substrate holder 160 holding the substrate W is lowered to a predetermined position where the substrate W can be immersed in the plating solution 10 in the plating tank 186 . In this state, the anode 56 is connected to the anode of the electroplating power supply 24 by the lead 22a, and the substrate W is connected to the cathode of the electroplating power supply 24 by the lead 22b. The reciprocating motion along the surface of the substrate W stirs the plating solution 10 in the substrate side chamber 40b, thus depositing metal on the surface of the substrate W to form a metal film.

At this time, as described above, the electric field leaks in the plurality of through holes 66 provided inside the adjustment plate 60, and the leaked electric field is uniformly diffused, so that the potential distribution across the entire surface of the substrate W (surface to be plated) is more uniform. , as shown in FIG. 6, a metal film P with better in-plane uniformity can be formed on the surface of the substrate W. Moreover, the plating solution 10 between the substrate W and the adjustment plate 60 is stirred by the stirrer 62 during the electroplating process, and while the directionality of the flow of the plating solution is eliminated, it is more uniformly supplied to the surface of the substrate W. The ions can form a metal film with a more uniform thickness more quickly.

And, after the electroplating is finished, the electroplating power supply 24 is cut off from the substrate W and the anode 56, the substrate support 160 and the substrate W are lifted together, and after necessary treatments such as washing and rinsing of the substrate W are performed, the electroplating The substrate W is transferred to the next process.

A series of bump plating processes performed by a plating processing apparatus having such a configuration will be described with reference to FIG. 7 . First, as shown in FIG. 7A, a thin layer 500 as a power supply layer is formed on the surface, and a resist 502 with a height H of 20 to 120 μm is coated on the surface of the thin layer 500, for example, and then the resist 502 is coated. For example, an opening 502a with a diameter _D1 of 20-120 μm is provided at a predetermined position, and the substrate W processed in this way is placed in the substrate cassette with its surface facing up, and the substrate cassette is placed in the loading and unloading port 120.

From the substrate cassette placed at the loading and unloading port 120, a substrate W is taken out by the first transport robot 128, placed on the positioner 122, and the position of the positioning surface or notch is aligned in a predetermined direction. The substrate W aligned by the positioner 122 is transported into the preprocessing device 126 by the first transport robot 128 . Further, in the pretreatment device 126, pretreatment using pure water as the pretreatment liquid (water washing pretreatment) is performed. On the other hand, the substrate holders 160 stored in the vertical state in the stocker 164 are taken out by the second transport robot 174a, rotated by 90°C to be in a horizontal state, and placed on the substrate loading and unloading table 162 side by side. .

Then, the substrate W that has undergone the above-mentioned pretreatment (water washing pretreatment) is placed on the substrate holder 160 located on the substrate loading and unloading table 162, and the peripheral portion thereof is sealed. The substrate holders 160 on which the substrates W are placed are grasped by the second transport robot 174a two at a time, raised, and transported to the stocker 164, and rotated by 90°C so that the substrate holders 160 become vertical. state, and then descend, so that the two substrate holders 160 are suspended in the stocker 164 (temporarily placed). The above actions are repeated in sequence, the substrates are placed in the substrate holder 160 installed in the stocker 164 in turn, and hung and held (temporarily placed) in the specified position of the stocker 164 in turn.

On the other hand, the second transfer manipulator 174b grasps two substrate holders 160 temporarily placed in the stocker 164, lifts them up and transports them to the activation treatment device 166, and dips the substrates into the activation treatment device 166. In the chemical solution such as sulfuric acid or hydrochloric acid in the chemical treatment tank 183, the oxide film with high resistance on the surface of the thin layer is corroded, so that the clean metal surface is exposed. Similarly, the substrate holder 160 containing the substrate is transported to the first water washing device 168a, and the surface of the substrate is washed with pure water contained in the water washing tank 184a.

The substrate holder 160 on which the water-washed substrate is set is transported to the electroplating apparatus 170 in the same manner, and is suspended and held in the electroplating tank 186 while being immersed in the plating solution 10 in the electroplating tank 186. Perform electroplating treatment. Then, after a predetermined time elapses, the substrate holder 160 on which the substrate is mounted is grasped again by the second transfer robot 174b, lifted up from the plating tank 186, and the plating process is completed.

Then, as described above, the substrate holder 160 is transported to the second water washing device 168b, immersed in the pure water in the water washing tank 184b, and the surface of the substrate is cleaned with pure water. Then, the substrate holder 160 loaded with the substrate is similarly transported into the blower 172, and an inert gas or air is sprayed on the substrate to remove the plating solution and water droplets adhering to the substrate holder 16. Then, the substrate holder 160 loaded with the substrate is similarly sent back to the specified position of the stocker 164 for hanging storage.

The second transfer manipulator 174b repeats the above operations in sequence, and sequentially returns the substrate holder 160 containing the electroplated substrates to the predetermined position of the stocker 164 for hanging storage.

On the other hand, the second transfer robot 174 a grasps two substrate holders 160 loaded with electroplated substrates and sent back to the stocker 164 at the same time, and places them on the substrate loading and unloading table 162 in the same manner.

Then, the substrate is taken out from the substrate holder 160 placed on the substrate loading and unloading table 162 by the first transport robot 128 arranged in the cleaning space 114, and transported to a cleaning/drying device 124. And, in this washing/drying device 124, the substrate facing upward and maintaining a level is cleaned with pure water, rotated at a high speed and spin-dried, and then the substrate is sent back to the loading and unloading port 120 with the first transfer manipulator 128. In the substrate box, a series of electroplating processes are completed. In this way, as shown in FIG. 7B , the substrate W in which the plating film 504 is grown in the opening 502 a on the resist 502 is obtained.

And, the above dried substrate W is, for example, dipped into a solvent such as acetone at a temperature of 50-60° C., as shown in FIG. The unnecessary thin layer 500 exposed to the outside after plating is removed. Then, the coating film 504 formed on the substrate W is reflowed, and as shown in FIG. 7E , a spherical protrusion 506 due to surface tension is formed. Then, the substrate W is annealed at a temperature of 100° C. or higher, for example, to remove residual stress in the protrusion 506 .

According to this example, the transfer of substrates in the plating space 116 is performed by the second transfer robots 174a and 174b in the plating space 116, and the transfer of substrates in the cleaning space 114 is performed by the first transfer robot 128 in the cleaning space 114. to proceed. Therefore, all the electroplating processes of substrate pretreatment, electroplating treatment and electroplating post-treatment are carried out continuously and automatically, which improves the cleanliness around the substrate inside the electroplating treatment device, and can improve the processing capacity of the electroplating treatment device and reduce the pressure of the electroplating treatment device. The load of the auxiliary equipment can be reduced, and the electroplating treatment device can be further miniaturized.

In this example, the electroplating device 170 that carries out the electroplating process has adopted the electroplating device of the little electroplating tank 186 of frame, so, can make the electroplating device that has a plurality of electroplating tanks 186 be more miniaturized, simultaneously, can lighten the accessory equipment of factory more. load. Also, one of the two washing/drying devices 124 provided in FIG. 1 may be replaced with a pretreatment device.

8 to 19 show various examples of the through-hole group consisting of a plurality of through-holes in the adjustment plate 60 . That is to say, in FIG. 8 , the through holes 66a are formed by long holes extending longitudinally into linear slits, and the through holes (long holes) 66a are arranged side by side in a straight line in a circular area along the outer shape of the substrate W. A via group 68a is formed. FIG. 9 shows that in order to adapt to the rectangular substrate W, the through holes (long holes) 66b are arranged side by side in a straight line in the rectangular area along the outer shape of the substrate W, forming a group of through holes 68b.

FIG. 10 shows a through hole (long hole) 66c formed of a plurality of through holes (long holes) 66c formed of long holes extending in a linear slit shape across the entire width of the region of the adjustment plate 60 facing the surface of the substrate W. Hole group 68c. In this case, a rectangular substrate W may also be used, and through holes (long holes) 66d are arranged side by side in a rectangular area along the outer shape of the substrate W as shown in FIG. 11 to form a through hole group 68d. Moreover, these through-holes 66d may extend linearly in the longitudinal direction.

Fig. 12 shows that a plurality of through holes (cross holes) 66e formed by cross holes extending in the longitudinal and transverse directions are equally arranged in a circular area to form a through hole group 68e. In this case, when a rectangular substrate W is used, as shown in FIG.

In FIG. 14, a plurality of through-holes (fine holes) 66g composed of fine holes are evenly arranged in a circular area to form a through-hole group 68g. The diameter of each through hole (fine hole) 66g is set to 2 mm in this example, and a total of 633 pieces are provided in the illustrated example. The diameters of the through hole 66g and the small holes (peripheral holes) 66h ₂ to 66h ₅ described below are arbitrarily set, for example, within a range of 1 to 20 mm. Preferably it is 2 to 10 mm. In this way, since the through-hole group 68g is constituted by the through-hole (fine hole) 66g, the production efficiency of the adjustment plate 60 can be improved.

Fig. 15 shows a plurality of holes with different diameters, that is, a large-diameter large hole (central hole) 66h ₁ located in the central part, and the large-diameter large hole 66h _{1 is arranged in the circumferential direction outside the large hole 66h 1} , as it moves outward in the diameter direction A plurality of through-holes 66h composed of a plurality of rows (four rows in the figure) of small holes (peripheral holes) 66h ₂ -66h ₅ with smaller and smaller apertures jointly constitute a through-hole group 68h. The diameter of the large hole (central hole) _66h1 is set to 84 mm in this example, but it can be set arbitrarily within the range of, for example, 50 to 300 mm, preferably 30 to 100 mm. Also, the diameters of the small holes (peripheral holes) 66h ₂ to 66h ₅ are set to 10 mm, 8 mm, 7 mm, and 6 mm, respectively.

Fig. 16 is a central hole 66i ₁ located in the center and a plurality of through holes 66i composed of long holes 66i ₂ to 66i ₆ arranged in multiple rows (5 rows in the figure) extending in the circumferential direction outside the central hole 66i ₁ , together constitute the through hole group 68i. The diameter of the central hole 66i ₁ is set to 34 mm in this example, and the widths of the long holes 66i ₂ to 66i ₆ are set to 27 mm, 18.5 mm, 7 mm, 7 mm, and 7 mm, respectively.

FIG. 17 shows a large-diameter large hole (central hole) 66j ₁ located in the central portion, a long hole 66j 2 extending in the circumferential direction arranged outside the central hole 66j ₁ in the circumferential direction, and a long hole 66j ₂ arranged in the long hole 66j ₂ . A plurality of through holes 66j composed of a plurality of rows (four rows in the figure) of small holes (peripheral holes) 66j ₃ to 66j ₆ whose apertures become smaller as they move outward in the diameter direction, These together constitute a group of through holes 68j. The diameter of the large hole (central hole) 66j ₁ is set to 67 mm in this example, the width of the long hole 66j ₂ is set to 17 mm, and the diameters of the small holes (peripheral holes) 66j ₃ to 66j ₆ are set to 9 mm respectively. , 8mm, 7mm, 6mm.

FIG. 18 shows the length of the large-diameter large hole (central hole) 66k ₁ located in the center and the rows (two rows in the figure) extending in the circumferential direction arranged outside the central hole 66k ₁ in the circumferential direction. The holes 66k ₂ , 66k ₃ , and a plurality of rows (two rows in the illustration) of small holes (peripheral holes) arranged outside the elongated hole 66k ₃ whose diameter becomes smaller as they move outward in the diameter direction. ) 66k ₄ to 66k ₅ and a plurality of through holes 66k together constitute a through hole group 68k. The diameter of the large hole (central hole) 66k ₁ is set to 80 mm in this example, the width of the long holes 66k ₂ and 66k ₃ is set to 17 mm, and the diameters of the small holes (peripheral holes) 66k ₄ to 66k ₅ are respectively The settings are: 6mm and 4mm.

Fig. 19 shows a large-diameter large hole (central hole) 661 ₁ located in the center, and a plurality of slit-like elongated holes arranged in a radial direction outside the central hole 661 ₁ at predetermined intervals along the circumferential direction. A plurality of through holes 661 formed by 661 ₂ together form a through hole group 681 . The width of the elongated hole ₆₆₁₂ is generally 0.5 to 20 mm, preferably 1 to 15 mm. In addition, the length is arbitrarily set according to the shape of the surface to be plated.

In this way, a plurality of through-holes of any shape, such as a plurality of fine holes, a plurality of holes with different diameters, or a long hole extending like a slit, are combined to form a through-hole group. Therefore, arbitrary requirements such as the plating place and conditions can be met.

Furthermore, in the examples shown in FIGS. 14 to 19 described above, an example in which through holes are arranged inside a circular region to form a group of through holes is shown. However, in the case of using a rectangular substrate as described above, it is of course also possible to arrange the through-holes in a rectangular area along the outer shape of the substrate.

As mentioned above, if the present invention is adopted, electric field leakage is arranged in a plurality of through holes provided in the inside of the adjustment plate provided in the electroplating tank, and the electric field leaked spreads uniformly, so that the electric field across the entire surface of the plated body The potential distribution is more uniform, and the in-plane uniformity of the metal film formed on the object to be plated can be further improved. And the plating solution is suppressed from passing through the multiple through holes provided in the inside of the adjustment plate provided in the electroplating tank, so it can prevent the thickness of the metal film formed on the object to be plated from being affected by the flow of the plating solution. uneven.

FIG. 20 shows a plating apparatus 170a according to another embodiment of the present invention; FIG. 21 shows an adjustment plate used in the plating apparatus 170a and a cylindrical body forming a plating solution flow path. The difference between this electroplating apparatus 170a and the example shown in FIGS. A central hole 60a with an inner diameter D matching the outer diameter of the substrate W, and on the surface of the adjustment plate 60 on the substrate holder 160 side, a cylindrical body 200 with an inner diameter equal to the inner diameter D of the central hole 60a is connected. By making it concentric, a plating solution channel 200a through which the plating solution 10 flows is formed on the inner peripheral surface of the cylindrical body 200 while uniformly passing an electric field. The cylindrical body 200 is the same as the adjustment plate 60, and its structural material is a dielectric made of resin materials such as PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE, etc. Other structures are the same as those shown in Fig. 3 to Fig. 5 .

Here, the central hole of the adjustment plate 60 and the inner diameter D of the cylindrical body 200 are generally set to a diameter ± 16mm equal to the outer diameter of the electroplated surface (the outer diameter of the surface to be plated) of the substrate W, preferably equal to the diameter of the surface to be plated. The diameter equal to the outer diameter is ±5mm, preferably the diameter equal to the outer diameter of the surface to be plated is ±1mm. In addition, the length L of the cylindrical body 200 is appropriately determined according to the shape of the plating tank 186, the distance between the anode 56 and the substrate W, and the like. Generally, it is 10-90 mm, preferably 20-75 mm, most preferably 30-60 mm.

In this way, the electric field formed between the anode 56 and the substrate W in the electroplating bath 186 passes uniformly along the plating solution flow path 200a, that is, inside the cylinder 200, and will not leak to the outside of the cylinder 200, so , can adjust and correct the electric field distortion and deviation, so that the potential distribution across the entire surface of the substrate W is more uniform, as shown in Figure 22, although on the surface of the substrate W, the film thickness at the edge of the substrate W Although slightly thick, a metal film P with higher in-plane uniformity can be formed.

That is to say, relying only on the adjustment plate 60 provided with the central hole 60a inside, the plate thickness of the adjustment plate 60 is generally thin, about 0.5-10m. Therefore, in the electroplating tank 186, the anode 56 and the substrate W It is not enough to control the electric field formed between them only by the adjustment plate 60, and the electric field will be distorted and deviated, especially the film thickness of the edge portion of the substrate serving as the power receiving portion will increase. Passage of the electric field is restricted over the length L of the cylindrical body 200 as in this example, so that such damage can be prevented and the in-plane uniformity of the metal film can be improved.

Also, in this example, like the example shown in FIGS. 3 to 5 described above, between the cylindrical body 200 and the substrate W held by the substrate holder 160, a paddle having a plurality of paddles 62 hanging downward is arranged. The rod-type stirring mechanism 64 drives the stirring rod-type stirring mechanism 64 during electroplating, so that the stirring rod 62 reciprocates along the surface of the substrate W, and stirs the plating solution 10 in the substrate side chamber 40b, so that the plating solution can be eliminated. The directionality of the liquid flow enables sufficient ions to be supplied more uniformly from the surface of the substrate W, and a metal film with a more uniform film thickness can be formed more quickly.

FIG. 23 shows a plating apparatus 170b according to another embodiment of the present invention. The difference between this electroplating apparatus 170b and the example shown in Fig. 21 and Fig. 22 is that: between the cylindrical body 200 and the substrate W held by the substrate holder 160, a plating solution jet stirring mechanism 202 is arranged instead of the stirring mechanism. Rod stirring mechanism 64. That is, the plating solution spraying stirring mechanism 202 has a plating solution supply pipe 204 and a plurality of plating solution spraying nozzles 206 . The plating solution supply pipe 204 is formed of, for example, an annular pipe, communicates with the pipe 48 , and is placed so as to be immersed in the plating solution 10 of the plating tank 186 . A plurality of plating solution injection nozzles 206 are installed at predetermined positions along the circumferential direction of the plating solution supply pipe 204, and inject the plating solution 10 onto the substrate W held by the substrate holder 160. And, the plating solution 10 conveyed along with the driving of the pump 50 is supplied into the plating solution supply pipe 204, sprayed on the substrate from the plating solution injection nozzle 206, introduced into the electroplating tank 186, and then flows from the overflow weir 44 to the substrate. The upper overflow is circulated.

In this way, since the plating solution 10 is sprayed from the plurality of plating solution injection nozzles 206 to the substrate W, the plating solution 10 in the electroplating tank 186 is stirred to make its concentration uniform, and at the same time, the plating solution 10 can be sufficiently supplied to the substrate W. Each component can form a metal film with a more uniform film thickness more quickly.

Furthermore, in the above example, the example in which the cylindrical body 200 is connected to the surface of the adjustment plate 60 on the side of the substrate W is shown. As shown in FIG. 24, an embedding hole 60b may also be provided on the adjustment plate 60, with an inner diameter of D and a length of L, and a cylindrical body 200 whose inner peripheral surface is used as a plating solution flow path 200a is embedded into the embedding hole 60b. , to hold the cylindrical body 200 at a predetermined position along the length direction of the cylindrical body 200 . In this way, even when the distance between the adjustment plate 60 and the paddle 62 (see FIG. 20 ) or the plating solution supply pipe 204 (see FIG. 23 ) is short, the cylindrical body 200 can be made to protrude to the rear of the adjustment plate 60 , so A sufficient length L of the cylindrical body 200 can be ensured.

Furthermore, as shown in FIG. 25 , a plurality of through holes 200b having a size capable of preventing electric field leakage may be provided on the peripheral wall of the cylindrical body 200 . In this way, the plating solution 10 can flow through the through hole 200b provided on the peripheral wall of the cylindrical body 200 while preventing the leakage of the electric field. The shape of the through hole includes, in addition to the fine hole of this example, a slit-shaped long hole, a cross hole extending in the vertical and horizontal directions, and combinations thereof.

Furthermore, as shown in FIG. 26 , the adjustment plate 210 can also be formed with a plate body having a sufficient thickness, and a through-hole with a predetermined inner diameter is provided at a predetermined position of the adjustment plate 210, and the through-hole is used to form a plate with a predetermined inner diameter D. With the plating solution flow path 210a of predetermined length L, in the case of this example, the number of parts can be reduced.

In addition, as shown in FIG. 27, a rectangular block 212 having a sufficient thickness may be prepared, and a plating solution flow path 210a having a predetermined inner diameter D and a predetermined length L may be formed by using a through hole provided on the rectangular block 212, and the rectangular block may be 212 is attached to the surface of the adjustment plate 60 on the side close to the substrate W, wherein the adjustment plate 60 has a central hole 60a.

FIG. 28 shows a plating device 170c according to another embodiment of the present invention; FIG. 29 shows an adjustment plate, a cylinder forming a plating solution flow path, and an electric field adjustment ring used in the plating device 170c shown in FIG. 28 . This plating apparatus 170c differs from the example shown in FIGS. 20 and 21 in the following points. That is to say, the substrate W-side end surface of the cylindrical body 200 having the plating solution flow path 200a formed on the inner peripheral surface is concentrically installed with an electric field with a width A of the same inner diameter as the inner diameter D of the cylindrical body 200. Ring 220 , the electric field adjustment ring 220 is arranged in a state close to the substrate W, and a gap G1 is maintained between the substrate W and the ring 220 . Moreover, the paddle-type stirring mechanism 64 has a plurality of paddles 62, and the paddles are suspended downward, and reciprocate in parallel with the substrate W held by the substrate holder 160 to stir the plating solution, and the stirring mechanism 64 is arranged The plating solution 10 in the anode side chamber 40 a is stirred by this paddle type stirring mechanism 64 between the anode 56 on the side of the anode side chamber 40 a and the adjustment plate 60 . Other structures are the same as the examples shown in Fig. 20 and Fig. 21 .

Here, the electric field adjustment ring 220 is made of a dielectric material such as PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE, etc., like the adjustment plate 60 and the cylindrical body 200 . The shape of the electric field adjustment ring 220 is appropriately set according to the shape of the plating tank 186 and the substrate W, the distance between the anode 56 and the substrate W, and the like. Its width A is generally 1-20 mm, preferably 3-17 mm, most preferably 5-15 mm. In addition, the gap G1 between the electric field adjustment ring 220 and the substrate W is generally set to be 0.5-30 mm, more preferably 1-15 mm, most preferably 1.5-6 mm.

The electric field adjusting ring 220 covers a position close to the outer periphery of the substrate W with a predetermined width, and adjusts the electric field of the outer periphery of the substrate W. In this way, the electric field at the outer periphery of the substrate W is adjusted by the electric field adjustment ring 220, so that the electric field formed between the anode 56 and the substrate W can be more uniform on the entire substrate W, that is to say, until it is used as a receiving electrode. The edges of the substrate W are uniform. As shown in FIG. 30 , a metal film P with higher in-plane uniformity can be formed on the surface of the substrate W, including the edges of the substrate W.

FIG. 31 shows a plating apparatus 170d according to another embodiment of the present invention. In this electroplating device 170d, between the anode 56 and the adjustment plate 60 of the anode side chamber 40a, a plating solution jet stirring mechanism 202 shown in FIG. Agency64. That is to say, in this example, the plating solution 10 sent along with the driving of the pump 50 is supplied into the plating solution supply pipe 204, sprayed from the plating solution injection nozzle 206 to the plating solution flow path 200a of the cylindrical body 200, It is introduced into the electroplating tank 186, and then it overflows from the upper end of the overflow baffle 44 to circulate. Other structures are the same as those shown in Fig. 28 and Fig. 29 .

In this way, the plating solution spraying type stirring mechanism 202 is arranged in the anode side chamber 40a, and the plating solution is sprayed from the plating solution spraying nozzle 206 to the plating solution flow path 200a of the cylindrical body 200, so even if the electric field adjusting ring 220 and the base Even when the gap G1 between the substrates W held by the wafer holder 160 is narrow, the plating solution can be supplied to the substrate W held by the substrate holder 160 through the plating solution flow path 200a.

Here, as shown in FIG. 32 , substantially the same as the case shown in FIG. 24 above, an embedding hole 60 b may be provided on the adjustment plate 60 , the inner diameter is D, the length is L, and the inner peripheral surface is used as the plating solution flow path 200 a. The cylindrical body 220 provided with the electric field adjustment ring 220 at the end is fitted into the engagement hole 60b, and the cylindrical body 200 is held at a predetermined position along the longitudinal direction of the cylindrical body 200 .

And, as shown in Fig. 33, substantially the same as the situation shown in above-mentioned Fig. 25, also can be provided with on the peripheral wall of the cylindrical body 200 of electric field adjusting ring 220 on the end face, a plurality of through-holes of the size that can prevent electric field from leaking are set. 200b, on the one hand, can prevent the leakage of the electric field, and on the other hand, can make the plating solution 10 pass through the through hole 200b provided on the peripheral wall of the cylinder 200 .

Furthermore, as shown in FIG. 34 , the electric field adjustment ring 220 may not be fixed on the end surface of the cylinder 200, but supported by a bracket 222, and arranged in front of the end surface of the cylinder 200 on the side of the substrate W, A gap G2 is maintained with the substrate W. The gap G2 is the same as the gap G1 between the electric field adjusting ring 220 and the substrate W, and is generally set to be 0.5-30 mm, preferably 1-15 mm, most preferably 1.5 mm-6 mm. In this way, if the plating solution flow path 200a is formed, the cylindrical body 200 and the electric field adjustment ring 220 are separated, so the range of selection can be expanded.

In addition, as shown in FIG. 35 , it is also possible to use the inner peripheral surface of a thick ring 224 having a sufficient thickness to form a plating solution flow path 224a having a predetermined inner diameter D and a length L, and use the end surface of the thick ring 224 on the substrate side An electric field adjusting ring 224b having a predetermined width A is formed. This reduces the number of parts.

In addition, in each of the above-mentioned examples, an example applied to a plating apparatus employing a so-called immersion method was shown. However, it can also be applied to plating devices employing a face-up (flip-chip) system and a face-up system.

Fig. 36 shows an example of application to a plating apparatus employing the flip-chip method. In this example, the following structures are added to the existing electroplating apparatus shown in FIG. 37 . That is to say, the adjustment plate 230 with the central hole 230a is arranged on the top of the electroplating tank 12, the inside of the electroplating tank 12 is isolated into the anode side chamber 12a and the substrate side chamber 12b, and, on the upper surface of the adjustment plate 230, with A cylindrical body 232 having the same inner diameter as the central hole 230a and a plating solution flow path 232a formed on the inner peripheral surface is attached so as to concentrically protrude upward. In this way, the electric field formed between the anode 16 and the substrate W in the electroplating tank 12 passes uniformly along the plating solution flow path 232a, that is, the inside of the cylinder 232 without leaking to the outside of the cylinder 232a, so , can adjust and correct the distortion and deviation of the electric field, so that the potential distribution across the entire surface of the substrate W is more uniform.

Moreover, on the upper end surface of the cylinder, an electric field adjustment ring having an inner diameter equal to the inner diameter of the cylinder and having a predetermined width is concentrically installed, and by using the electric field adjustment ring, the outer peripheral portion of the substrate W is adjusted according to a predetermined position. Width is covered, and the electric field of the peripheral part of this substrate W is adjusted, like this, of course also can make the electric field formed between anode and substrate also can be more uniform in the edge part of substrate as power receiving part, in substrate W The surface of the chip, including the edge portion of the substrate, forms a metal film with better in-plane uniformity.

Claims (26)

1. An electroplating device, characterized in that: an electroplating tank for holding a plating solution; an anode, which is immersed in and placed in the plating solution in the electroplating tank; an adjustment plate disposed between the above-mentioned anode and the object to be plated disposed opposite to the anode; and An electroplating power supply, which is used for conducting electroplating between the above-mentioned anode and the body to be plated; The adjustment plate is provided so as to block the plating solution stored in the electroplating tank between the anode side and the plated body side, and a through-hole group consisting of a plurality of through-holes is provided inside. 2. The electroplating device according to claim 1, wherein the group of through holes includes a plurality of long holes, and the long holes extend in one direction to form linear or arc-shaped slits. 3. The electroplating device according to claim 1, wherein the group of through holes includes a plurality of cross holes extending in a cross shape in the longitudinal direction and the transverse direction. 4. The electroplating device according to claim 1, wherein the group of through holes is formed by any combination of a plurality of fine holes, a plurality of holes with different diameters, or long holes extending into slits. 5. The electroplating apparatus according to claim 1, wherein said through-hole group spans substantially the entire region of said adjustment plate facing said body to be plated, and is formed in a shape approximately similar to that of said body to be plated. within the area. 6. The electroplating apparatus according to claim 1, further comprising a stirring mechanism for stirring the plating solution held in the electroplating tank between the object to be plated and the adjusting plate. 7. The electroplating apparatus according to claim 6, wherein said agitating mechanism is a paddle type agitating mechanism having a paddle reciprocating in parallel with said object to be plated. 8. The electroplating device according to claim 1, wherein said anode and said adjustment plate are arranged in a vertical direction. 9. An electroplating device, characterized in that it has: an electroplating tank for holding a plating solution; an anode, which is immersed in and placed in the plating solution in the electroplating tank; an adjustment plate disposed between the above-mentioned anode and the object to be plated disposed opposite to the anode; and An electroplating power supply, which is used for conducting electroplating between the above-mentioned anode and the body to be plated; The adjustment plate is provided to block the plating solution stored in the plating tank between the anode side and the plated body side, and has a plating solution flow path for passing the plating solution while passing an electric field uniformly therein. 10. The electroplating apparatus according to claim 9, wherein the length of the plating solution flow path is set at 10 to 90 mm. 11. The electroplating apparatus according to claim 9, wherein the plating solution flow path is formed on the inner peripheral surface of the cylindrical body or the rectangular block. 12. The electroplating device according to claim 11, characterized in that a plurality of through holes are provided on the peripheral wall of the cylindrical body with a size capable of preventing leakage of the electric field. 13. The electroplating apparatus according to claim 9, characterized in that: at least one of between the object to be plated and the adjustment plate, or between the cathode and the adjustment plate, is provided with a plating device held in the electroplating tank. Stirring mechanism for stirring liquid. 14. The electroplating apparatus according to claim 13, wherein said stirring mechanism is a paddle type stirring mechanism having a paddle reciprocating in parallel with said object to be plated. 15. The electroplating apparatus according to claim 13, wherein said agitating mechanism is a plating solution spraying type stirring mechanism having a plurality of plating solution spraying nozzles for spraying plating solution toward said object to be plated. 16. The electroplating device according to claim 13, characterized in that the plating solution flow path is provided inside the adjustment plate to form an integral body with the adjustment plate. 17. An electroplating device, characterized in that it has: an electroplating tank for holding a plating solution; an anode, which is immersed in and placed in the plating solution in the electroplating tank; The adjustment plate is arranged between the anode and the object to be plated opposite to the anode, so as to block the plating solution stored in the electroplating tank from the side of the anode and the object to be plated. The plating solution flow path through which the electric field passes evenly and the plating solution flows through; An electroplating power supply, which is used for conducting electroplating between the above-mentioned anode and the object to be plated; and The electric field adjustment ring is located at the end of the plating solution flow path on the side of the object to be plated, and is used to adjust the electric field of the outer peripheral portion of the object to be plated. 18. The electroplating device according to claim 17, characterized in that the width of the electric field adjustment ring is set to 1-20 mm. 19. The electroplating apparatus according to claim 17, wherein the gap between the electric field adjustment ring and the object to be plated is set to 0.5-30 mm. 20. The electroplating apparatus according to claim 17, wherein the plating solution flow path is formed on the inner peripheral surface of the cylindrical body, and the electric field adjusting ring is connected to the end of the cylindrical body on the side of the object to be plated. 21. The electroplating device according to claim 20, characterized in that a plurality of through holes are provided on the peripheral wall of the cylindrical body with a size capable of preventing leakage of the electric field. 22. The electroplating device according to claim 17, wherein the plating solution flow path is formed on the inner peripheral surface of the cylindrical body, and the electric field adjustment ring is separated from the cylindrical body and arranged on the inner surface of the cylindrical body. Plated body side ends. 23. The electroplating apparatus according to claim 17, wherein the plating solution flow path is formed on the inner peripheral surface of the cylindrical body, and the electric field adjusting ring is formed on the end surface of the cylindrical body on the side of the object to be plated. 24. The electroplating apparatus according to claim 17, characterized in that: at least one of between the object to be plated and the adjustment plate, or between the cathode and the adjustment plate, is provided with a plating device held in the electroplating tank. Stirring mechanism for stirring liquid. 25. The electroplating apparatus according to claim 24, wherein said agitating mechanism is a paddle type agitating mechanism having a paddle reciprocating in parallel with said object to be plated. 26. The electroplating apparatus according to claim 24, wherein said agitating mechanism is a plating solution spraying type stirring mechanism having a plurality of plating solution spraying nozzles for spraying plating solution toward said object to be plated.

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