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CN120816166A - Laser drilling method for packaging substrate and packaging substrate - Google Patents

Laser drilling method for packaging substrate and packaging substrate

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Publication number
CN120816166A
CN120816166A CN202511322613.1A CN202511322613A CN120816166A CN 120816166 A CN120816166 A CN 120816166A CN 202511322613 A CN202511322613 A CN 202511322613A CN 120816166 A CN120816166 A CN 120816166A
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CN
China
Prior art keywords
laser
laser energy
pad
drilling operation
drilling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
CN202511322613.1A
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Chinese (zh)
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CN120816166B (en
Inventor
连程杰
唐华
卢海林
张婷
王俊
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Zhejiang Chuanghuao Semiconductor Co ltd
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Zhejiang Chuanghuao Semiconductor Co ltd
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Priority to CN202511322613.1A priority Critical patent/CN120816166B/en
Publication of CN120816166A publication Critical patent/CN120816166A/en
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Publication of CN120816166B publication Critical patent/CN120816166B/en
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

本申请实施例提供一种封装基板镭射钻孔方法及封装基板,封装基板包括依次层叠的第一铜层、介质层、第二铜层,方法包括:以第一激光能量进行第一钻孔操作,在第一铜层上烧蚀掉一环形区域;以第二激光能量进行第二钻孔操作,去除环形区域中间的铜盖以及部分介质层,形成盲孔,第二激光能量小于第一激光能量;以第三激光能量进行第三钻孔操作,去除盲孔底部的介质层,直至盲孔底部露出第二铜层,第三激光能量小于第二激光能量。本申请实施例的封装基板镭射钻孔方法,在满足镭射钻孔品质要求的前提下,能够提高镭射钻孔加工效率。

Embodiments of the present application provide a method for laser drilling a package substrate and a package substrate. The package substrate includes a first copper layer, a dielectric layer, and a second copper layer stacked in sequence. The method includes: performing a first drilling operation with a first laser energy to ablate an annular area on the first copper layer; performing a second drilling operation with a second laser energy to remove the copper cap and a portion of the dielectric layer in the center of the annular area to form a blind via; the second laser energy being less than the first laser energy; and performing a third drilling operation with a third laser energy to remove the dielectric layer at the bottom of the blind via until the second copper layer is exposed at the bottom of the blind via; the third laser energy being less than the second laser energy. The package substrate laser drilling method of the embodiment of the present application can improve laser drilling processing efficiency while meeting laser drilling quality requirements.

Description

Laser drilling method for packaging substrate and packaging substrate
Technical Field
The application relates to the technical field of packaging substrate processing, in particular to a laser drilling method for a packaging substrate and the packaging substrate.
Background
LCP (Liquid Crystal Polymer ) resin is a high-performance high-frequency circuit substrate material and is widely applied to the fields of packaging substrates such as 5G communication, millimeter wave radar, high-speed data transmission and the like. LCP resins have poor thermal conductivity, are locally prone to overheating, and have low melting points (less than 280 ℃) and are easily melted into a liquid flow. The nano-second laser is used for laser drilling of the LCP packaging substrate, and high peak power generates instantaneous high temperature in the resin to enable the resin to flow, so that the problems of resin residue at the bottom of the blind hole, poor bonding force of a welding ring at the bottom of the blind hole and the like are easily caused.
Currently, it is common practice in the industry to drill holes with laser by multiple processing with low laser energy to avoid quality problems caused by instantaneous overheating of LCP resins. However, this method of machining reduces the efficiency of laser drilling.
Disclosure of Invention
The embodiment of the application provides a laser drilling method for a packaging substrate and the packaging substrate, which can avoid quality problems caused by instant overheating of a dielectric layer of the packaging substrate and can improve the laser drilling processing efficiency.
The embodiment of the application provides a laser drilling method for a packaging substrate, wherein the packaging substrate comprises a first copper layer, a dielectric layer and a second copper layer which are sequentially stacked, and the method comprises the following steps:
Performing a first drilling operation with a first laser energy to ablate an annular region from the first copper layer;
performing a second drilling operation by using second laser energy, removing the copper cover and part of the dielectric layer in the middle of the annular region, and forming a blind hole, wherein the second laser energy is smaller than the first laser energy;
And performing a third drilling operation by using third laser energy, and removing the dielectric layer at the bottom of the blind hole until the second copper layer is exposed at the bottom of the blind hole, wherein the third laser energy is smaller than the second laser energy.
In some embodiments, the second copper layer is formed with a bonding pad, and before the second drilling operation with the second laser energy, further comprising:
determining the type of a bonding pad at the bottom of a blind hole to be processed;
And determining the corresponding second laser energy and third laser energy according to the type of the bonding pad.
In some embodiments, the pad types include individual pads, non-individual pads, pad combinations, large copper pads;
The periphery of the independent bonding pad is provided with a closed etching area, and the etching areas are connected in a wireless way;
the non-independent bonding pad is connected with a circuit extending outwards;
The bonding pad combination comprises a plurality of bonding pads which are connected in sequence;
The copper surface area of the large copper surface bonding pad is larger than k times of the blind hole area, wherein k is larger than or equal to 30.
In some embodiments, the second laser energy corresponding to the individual pads is less than the second laser energy corresponding to the non-individual pads, the second laser energy corresponding to the non-individual pads is less than the second laser energy corresponding to the pad combinations, and the second laser energy corresponding to the pad combinations is less than the second laser energy corresponding to the large copper pads.
In some embodiments, the third laser energy corresponding to the independent pad is less than the third laser energy corresponding to the dependent pad, the third laser energy corresponding to the dependent pad is less than the third laser energy corresponding to the pad combination, and the third laser energy corresponding to the pad combination is less than the third laser energy corresponding to the large copper pad.
In some embodiments, the laser scanning speed of the first drilling operation is less than the laser scanning speed of the second drilling operation, which is less than the laser scanning speed of the third drilling operation.
In some embodiments, the number of laser ring cuts for the first drilling operation is less than or equal to the number of laser ring cuts for the second drilling operation, which is less than the number of laser ring cuts for the third drilling operation.
In some embodiments, the laser frequency of the first drilling operation, the laser frequency of the second drilling operation, and the laser frequency of the third drilling operation are all the same.
In some embodiments, the dielectric layer is made of a liquid crystal polymer resin.
The embodiment of the application also provides a packaging substrate, which comprises a first copper layer, a dielectric layer and a second copper layer which are sequentially stacked, wherein a blind hole is formed in the packaging substrate, an opening of the blind hole is positioned in the first copper layer, the bottom of the blind hole is exposed out of the second copper layer, and the blind hole is formed by the method of any one of the above steps.
In the laser drilling method of the packaging substrate, the high temperature generated by the first drilling operation can be conducted and emitted by the first copper layer quickly, so that the laser pulse with higher energy can be adopted by the first drilling operation to improve the laser drilling processing efficiency, and the high temperature generated by the second drilling and the third drilling is conducted and emitted by the second copper layer at the bottom of the blind hole. Therefore, the laser drilling method for the packaging substrate can improve the laser drilling processing efficiency on the premise of meeting the quality requirement of laser drilling.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is evident that the drawings in the following description are only some embodiments of the application and that other drawings may be obtained from these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a package substrate according to an embodiment of the application.
Fig. 2 is a schematic diagram of a second structure of a package substrate according to an embodiment of the application.
Fig. 3 is a schematic flow chart of a laser drilling method for a package substrate according to an embodiment of the application.
Fig. 4 is a schematic view of a package substrate after a first drilling operation according to an embodiment of the present application.
FIG. 5 is a schematic view of an annular region formed by a first drilling operation according to an embodiment of the present application.
Fig. 6 is a schematic diagram of a package substrate after a second drilling operation according to an embodiment of the present application.
Fig. 7 is a schematic view of a package substrate after a third drilling operation according to an embodiment of the present application.
Fig. 8 is a second flowchart of a laser drilling method for a package substrate according to an embodiment of the application.
Fig. 9 is a schematic diagram of individual pads of a package substrate according to an embodiment of the application.
Fig. 10 is a schematic diagram of a non-independent pad of a package substrate according to an embodiment of the application.
Fig. 11 is a schematic diagram illustrating a bonding pad assembly of a package substrate according to an embodiment of the application.
Fig. 12 is a schematic view of a large copper pad of a package substrate according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
The embodiment of the application provides a packaging substrate. In some embodiments, the package substrate may be a flexible package substrate. Referring to fig. 1, fig. 1 is a schematic diagram of a first structure of a package substrate 100 according to an embodiment of the application.
The package substrate 100 includes a first copper layer 10, a dielectric layer 20, and a second copper layer 30 stacked in this order. The dielectric layer 20 is made of resin. In some embodiments, the material of the dielectric layer 20 is a liquid crystal polymer (Liquid Crystal Polymer, LCP) resin. In practical application, LCP resins have poor thermal conductivity, are locally easy to overheat, and have a low melting point (less than 280 ℃) so as to be easy to melt into liquid flow.
The second copper layer 30 is formed with a plurality of pads 31, and the pads 31 may be plural. In some embodiments, the first copper layer 10 may not form a circuit pattern, and the second copper layer 30 forms a circuit pattern, which may include the above-described pads 31.
The package substrate 100 is formed with a plurality of blind holes 40, and the blind holes 40 may be plural. The opening of the blind via 40 is located in the first copper layer 10, and the bottom of the blind via 40 exposes the second copper layer 30. In practical application, the position of the blind hole 40 may be opposite to the bonding pad 31, the blind hole 40 may be subjected to metallization treatment such as copper deposition electroplating, so that the blind hole 40 forms a metallization hole, and electrical connection between the bonding pad 31 and other layers or electronic elements is achieved through the blind hole 40.
In some embodiments, referring to fig. 2, fig. 2 is a schematic diagram illustrating a second structure of a package substrate 100 according to an embodiment of the application.
The first copper layer 10, the dielectric layer 20, and the second copper layer 30 may be sequentially stacked on both sides of the package substrate 100. A core plate layer 50 is provided between the two second copper layers 30 of the inner layer. In some embodiments, the material of the core layer 50 may also be a Liquid Crystal Polymer (LCP). Wherein blind holes 40 are formed on both sides of the package substrate 100.
The embodiment of the application also provides a laser drilling method for the package substrate, which is used for forming the blind holes 40 on the package substrate 100. Referring to fig. 3, fig. 3 is a schematic flow chart of a laser drilling method for a package substrate according to an embodiment of the application. The laser drilling method of the packaging substrate comprises the following steps:
210, performing a first drilling operation with a first laser energy to ablate an annular region from the first copper layer;
220, performing a second drilling operation by using second laser energy, removing the copper cover and part of the dielectric layer in the middle of the annular region, and forming a blind hole, wherein the second laser energy is smaller than the first laser energy;
230, performing a third drilling operation by using third laser energy, and removing the dielectric layer at the bottom of the blind hole until the second copper layer is exposed at the bottom of the blind hole, wherein the third laser energy is smaller than the second laser energy.
Referring to fig. 4 to 7 together, fig. 4 is a schematic diagram of a package substrate structure after a first drilling operation according to an embodiment of the present application, fig. 5 is a schematic diagram of an annular region formed by the first drilling operation according to an embodiment of the present application, fig. 6 is a schematic diagram of a package substrate structure after a second drilling operation according to an embodiment of the present application, and fig. 7 is a schematic diagram of a package substrate structure after a third drilling operation according to an embodiment of the present application.
Wherein a first drilling operation is first performed with a first laser energy, as shown in fig. 4 and 5, ablating a ring-shaped region on the first copper layer 10. The first copper layer 10 forms a large copper face, the annular region may be referred to as a copper ring, with a copper cap in between, and the resin of the dielectric layer 20 beneath the copper cap. During the first drilling operation, the high temperature generated by the laser is conducted and emitted rapidly by the outer large copper surface (the first copper layer 10), so that the resin does not generate local high temperature inside to generate rheological.
And then, carrying out a second drilling operation by using second laser energy, and removing the copper cover and part of the dielectric layer in the middle of the annular region to form blind holes as shown in fig. 6. The second drilling operation can remove the copper cap and a portion of the resin below the copper cap, but the resin still exists at the bottom of the blind via, and the second drilling operation does not burn through the dielectric layer 20. During the second drilling operation, the high temperature generated by the absorption of laser light by the resin of the dielectric layer 20 is mainly conducted and dissipated by the copper layer at the bottom of the blind via (i.e., the second copper layer 30). Wherein the second laser energy is less than the first laser energy.
Then, a third drilling operation is performed with a third laser energy, as shown in fig. 7, to remove the dielectric layer 20 at the bottom of the blind via, i.e. to remove the residual resin at the bottom of the blind via until the bottom of the blind via is exposed from the second copper layer 30. Thus, the processing of the blind hole 40 is completed. During the third drilling operation, the high temperature generated by the absorption of laser light by the resin of the dielectric layer 20 is mainly conducted and dissipated by the copper layer at the bottom of the blind via (i.e., the second copper layer 30). Wherein the third laser energy is less than the second laser energy.
It will be appreciated that the high temperatures generated by the first drilling operation may be dissipated by the outer large copper surface (first copper layer 10) rapidly, so that the first drilling operation may employ higher energy laser pulses to increase the laser drilling efficiency. The high temperature generated by the second and third holes is mainly conducted and dissipated by the copper layer (i.e. the second copper layer 30) at the bottom of the blind hole, and the second copper layer 30 is located inside the package substrate 100, so that the heat dissipation performance of the second copper layer is lower than that of the first copper layer 10, and therefore, laser pulses with lower energy are required to be adopted, so that the resin of the dielectric layer 20 generates local high temperature to generate rheological deformation, and the quality problem caused by instant overheating of the dielectric layer 20 of the package substrate can be avoided.
Therefore, the laser drilling method for the packaging substrate can improve the laser drilling processing efficiency on the premise of meeting the quality requirement of laser drilling.
In some embodiments, the laser of the first laser drilling may be set to have a frequency of 250KHz, an energy of 8-12 uj, a scanning speed of 50-150 mm/s, and a number of ring cuts of 1-2 times. The laser of the second laser drilling can be set as the following parameters, wherein the frequency is 250KHz, the energy is 4-6 uj, the scanning speed is 100-200 mm/s, and the circular cutting times are 1-2. The laser of the third laser drilling can be set as parameters of 250KHz frequency, 2-4 uj energy, 150-250 mm/s scanning speed and 2-3 times of circular cutting. Therefore, it can be satisfied that the second laser energy is smaller than the first laser energy and the third laser energy is smaller than the second laser energy.
In some embodiments, referring to fig. 8, fig. 8 is a second flowchart of a laser drilling method for a package substrate according to an embodiment of the application. Wherein, before the step 220 of performing the second drilling operation with the second laser energy, the method further comprises the following steps:
241, determining the type of a bonding pad at the bottom of the blind hole to be processed;
and 242, determining corresponding second laser energy and third laser energy according to the type of the bonding pad.
In practical application, the second copper layer 30 is formed with a plurality of pads 31. The plurality of pads 31 may have different pad types, which differ in pad structure and pad area. It can be understood that, during the second drilling operation and the third drilling operation, the high temperature generated by the resin of the dielectric layer 20 absorbing the laser is mainly conducted and emitted by the second copper layer 30 at the bottom of the blind hole 40, and the bottom of the blind hole 40 is opposite to the bonding pad 31, so that the high temperature generated by the resin is mainly conducted and emitted by the bonding pad 31 at the bottom of the blind hole 40, and the heat dissipation efficiency of the bonding pads of different types is different. For example, a pad having a larger area has a faster heat dissipation efficiency, and a pad having a smaller area has a slower heat dissipation efficiency.
Therefore, before the second drilling operation is performed, the type of the bonding pad at the bottom of the blind hole 40 to be processed can be determined, and the corresponding second laser energy and third laser energy can be determined according to the type of the bonding pad, so that the high temperature generated by the resin can be conducted out in time through the bonding pad 31 at the bottom of the blind hole when the second drilling operation is performed by the second laser energy and the third drilling operation is performed by the third laser energy, and the occurrence of rheological caused by local high temperature generated in the resin is avoided.
In some embodiments, the pad types include individual pads, non-individual pads, pad combinations, large copper pads. Referring to fig. 9 to 12, fig. 9 is a schematic diagram of an independent pad of a package substrate according to an embodiment of the present application, fig. 10 is a schematic diagram of a non-independent pad of a package substrate according to an embodiment of the present application, fig. 11 is a schematic diagram of a pad combination of a package substrate according to an embodiment of the present application, and fig. 12 is a schematic diagram of a large copper pad of a package substrate according to an embodiment of the present application.
As shown in fig. 9, the periphery of the independent bonding pad is a closed etching area, and the etching area is in wireless connection, i.e. no copper line is connected with the bonding pad around the independent bonding pad. The individual pads may be individual circular (or irregular) pads. The heat dissipation efficiency of the independent bonding pad is lowest, and the resin above the bonding pad is extremely easy to generate high-temperature melting during laser drilling, so that the quality of the blind hole is abnormal.
As shown in fig. 10, the non-independent bonding pad is connected with an outwardly extending line, i.e., the bonding pad is connected with a connecting wire (copper line) outwardly extending. The non-independent pads are non-independent circular (or irregular) pads. When laser drilling, the conducting wire connected with the non-independent bonding pad participates in conduction and heat dissipation, so that the heat dissipation efficiency is higher than that of the independent bonding pad, but the overall heat dissipation efficiency is still lower, and the resin above the bonding pad is easier to generate high-temperature melting during laser drilling to cause the abnormal quality of the blind hole.
As shown in fig. 11, the pad combination includes a plurality of pads connected in sequence. For example, the bonding pad combination may be formed by connecting and combining 2 to 4 bonding pads, and each bonding pad may be an independent round (or irregular) bonding pad. The periphery of the bonding pad combination is a closed etching area, and the etching areas are connected in a wireless way. The heat dissipation efficiency of the bonding pad combination is higher, and the resin above the bonding pad is less prone to high-temperature melting during laser drilling to cause abnormal quality of blind holes.
As shown in fig. 12, the copper area of the large copper surface bonding pad is larger, the bonding pad at the bottom of the blind hole is a large copper surface area, and the copper surface area is larger than k times of the blind hole area, wherein k is larger than or equal to 30. For example, in one example, k may be 30. The heat dissipation efficiency of the large copper surface bonding pad is higher, and the resin above the bonding pad is not easy to be melted at high temperature during laser drilling, so that the quality of the blind hole is abnormal.
In some embodiments, in order to avoid the occurrence of the abnormal quality of blind holes due to the occurrence of local high temperature in the resin during laser drilling, the second laser energy may be set such that the second laser energy corresponding to the independent bonding pad is smaller than the second laser energy corresponding to the dependent bonding pad, the second laser energy corresponding to the dependent bonding pad is smaller than the second laser energy corresponding to the bonding pad combination, and the second laser energy corresponding to the bonding pad combination is smaller than the second laser energy corresponding to the large copper bonding pad. That is, the higher the heat dissipation efficiency of the pad type, the greater the corresponding second laser energy.
In some embodiments, the third laser energy may be configured such that the third laser energy corresponding to an individual bond pad is less than the third laser energy corresponding to a non-individual bond pad, the third laser energy corresponding to a non-individual bond pad is less than the third laser energy corresponding to a bond pad combination, and the third laser energy corresponding to a bond pad combination is less than the third laser energy corresponding to a large copper bond pad. That is, the higher the heat dissipation efficiency of the pad type, the greater the corresponding third laser energy.
In some embodiments, the laser scanning speed of the first drilling operation is less than the laser scanning speed of the second drilling operation, which is less than the laser scanning speed of the third drilling operation. In one example, the laser scanning speed of the first drilling operation is 50-150 mm/s, e.g., 150mm/s, the laser scanning speed of the second drilling operation is 100-200 mm/s, e.g., 200mm/s, and the laser scanning speed of the third drilling operation is 150-250 mm/s, e.g., 250mm/s.
In some embodiments, the number of laser ring cuts for the first drilling operation is less than or equal to the number of laser ring cuts for the second drilling operation, which is less than the number of laser ring cuts for the third drilling operation. In one example, the first drilling operation has a laser ring cut of 1-2 times, such as 1 time, the second drilling operation has a laser ring cut of 1-2 times, such as 1 time, and the third drilling operation has a laser ring cut of 2-3 times, such as 2 times.
In some embodiments, the laser frequency of the first drilling operation, the laser frequency of the second drilling operation, and the laser frequency of the third drilling operation are all the same. For example, in one example, the frequencies may all be 250KHz.
In a specific application example, the respective laser parameters corresponding to the second drilling operation and the third drilling operation may be set according to the following table:
The copper cover and the residual resin in the blind holes are removed by the lasers with different laser parameters corresponding to the four bonding pad types, four different cutters are needed to be distinguished when the drilling belt is manufactured, a plurality of blind holes on the packaging substrate are processed according to the set lasers, and the laser processing efficiency can be improved on the premise of meeting the blind hole quality requirement.
It will be appreciated that in practical applications, a package substrate will typically include all four types of pads. The non-independent bonding pad can be subjected to laser processing by adopting higher laser energy and faster scanning speed compared with the independent bonding pad, the bonding pad combination can be subjected to laser processing by adopting higher laser energy and fewer ring cutting times compared with the non-independent bonding pad, and the large copper bonding pad can be subjected to laser processing by adopting higher laser energy and faster scanning speed compared with the bonding pad combination. Therefore, compared with the traditional method that laser processing is carried out on all bonding pads by adopting low laser energy and multiple times, the embodiment of the application adopts different laser parameters for bonding pads of different types, and the non-independent bonding pads, bonding pad combination and large copper bonding pads can improve the laser processing efficiency to a certain extent, so that the embodiment of the application can greatly improve the laser processing efficiency of the whole packaging substrate for a large number of bonding pads on the packaging substrate. According to experimental data comparison, compared with the traditional laser drilling method, the laser drilling method provided by the embodiment of the application has the advantage that the blind hole laser processing efficiency of the packaging substrate can be improved by 20% -30%.
In the description of the present application, it should be understood that terms such as "first," "second," and the like are used merely to distinguish between similar objects and should not be construed to indicate or imply relative importance or implying any particular order of magnitude of the technical features indicated.
The laser drilling method for the packaging substrate and the packaging substrate provided by the embodiment of the application are described in detail. Specific examples are set forth herein to illustrate the principles and embodiments of the present application and are provided to aid in the understanding of the present application. Meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.

Claims (10)

1.一种封装基板镭射钻孔方法,其特征在于,所述封装基板包括依次层叠的第一铜层、介质层、第二铜层,所述方法包括:1. A method for laser drilling a package substrate, wherein the package substrate comprises a first copper layer, a dielectric layer, and a second copper layer stacked in sequence, the method comprising: 以第一激光能量进行第一钻孔操作,在所述第一铜层上烧蚀掉一环形区域;performing a first drilling operation with a first laser energy to ablate an annular area on the first copper layer; 以第二激光能量进行第二钻孔操作,去除所述环形区域中间的铜盖以及部分所述介质层,形成盲孔,所述第二激光能量小于所述第一激光能量;performing a second drilling operation with a second laser energy to remove the copper cover in the middle of the annular area and a portion of the dielectric layer to form a blind hole, wherein the second laser energy is less than the first laser energy; 以第三激光能量进行第三钻孔操作,去除所述盲孔底部的所述介质层,直至所述盲孔底部露出所述第二铜层,所述第三激光能量小于所述第二激光能量。A third drilling operation is performed with a third laser energy to remove the dielectric layer at the bottom of the blind hole until the second copper layer is exposed at the bottom of the blind hole, wherein the third laser energy is less than the second laser energy. 2.根据权利要求1所述的封装基板镭射钻孔方法,其特征在于,所述第二铜层形成有焊盘,所述以第二激光能量进行第二钻孔操作之前,还包括:2. The method for laser drilling a package substrate according to claim 1, wherein a pad is formed on the second copper layer, and before performing the second drilling operation with the second laser energy, the method further comprises: 确定待加工的盲孔底部的焊盘类型;Determine the pad type at the bottom of the blind hole to be processed; 根据所述焊盘类型确定对应的所述第二激光能量、所述第三激光能量。The second laser energy and the third laser energy corresponding to the pad type are determined. 3.根据权利要求2所述的封装基板镭射钻孔方法,其特征在于,所述焊盘类型包括独立焊盘、非独立焊盘、焊盘组合、大铜面焊盘;3. The laser drilling method for a package substrate according to claim 2, wherein the pad types include independent pads, non-independent pads, pad combinations, and large copper pads; 所述独立焊盘周围为封闭的蚀刻区,所述蚀刻区无线路连接;The independent pad is surrounded by a closed etching area, and the etching area has no circuit connection; 所述非独立焊盘上连接有向外延伸的线路;The non-independent pad is connected to a circuit extending outward; 所述焊盘组合包括多个依次连接的焊盘;The pad combination includes a plurality of pads connected in sequence; 所述大铜面焊盘的铜面面积大于盲孔面积的k倍,其中k大于或等于30。The copper surface area of the large copper surface pad is greater than k times the area of the blind hole, where k is greater than or equal to 30. 4.根据权利要求3所述的封装基板镭射钻孔方法,其特征在于,所述独立焊盘对应的第二激光能量小于所述非独立焊盘对应的第二激光能量,所述非独立焊盘对应的第二激光能量小于所述焊盘组合对应的第二激光能量,所述焊盘组合对应的第二激光能量小于所述大铜面焊盘对应的第二激光能量。4. The laser drilling method for a packaging substrate according to claim 3 is characterized in that the second laser energy corresponding to the independent pad is smaller than the second laser energy corresponding to the non-independent pad, the second laser energy corresponding to the non-independent pad is smaller than the second laser energy corresponding to the pad combination, and the second laser energy corresponding to the pad combination is smaller than the second laser energy corresponding to the large copper surface pad. 5.根据权利要求3所述的封装基板镭射钻孔方法,其特征在于,所述独立焊盘对应的第三激光能量小于所述非独立焊盘对应的第三激光能量,所述非独立焊盘对应的第三激光能量小于所述焊盘组合对应的第三激光能量,所述焊盘组合对应的第三激光能量小于所述大铜面焊盘对应的第三激光能量。5. The laser drilling method for a packaging substrate according to claim 3 is characterized in that the third laser energy corresponding to the independent pad is smaller than the third laser energy corresponding to the non-independent pad, the third laser energy corresponding to the non-independent pad is smaller than the third laser energy corresponding to the pad combination, and the third laser energy corresponding to the pad combination is smaller than the third laser energy corresponding to the large copper surface pad. 6.根据权利要求1至5任一项所述的封装基板镭射钻孔方法,其特征在于,所述第一钻孔操作的激光扫描速度小于所述第二钻孔操作的激光扫描速度,所述第二钻孔操作的激光扫描速度小于所述第三钻孔操作的激光扫描速度。6. The packaging substrate laser drilling method according to any one of claims 1 to 5, characterized in that the laser scanning speed of the first drilling operation is lower than the laser scanning speed of the second drilling operation, and the laser scanning speed of the second drilling operation is lower than the laser scanning speed of the third drilling operation. 7.根据权利要求1至5任一项所述的封装基板镭射钻孔方法,其特征在于,所述第一钻孔操作的激光环切次数小于或等于所述第二钻孔操作的激光环切次数,所述第二钻孔操作的激光环切次数小于所述第三钻孔操作的激光环切次数。7. The laser drilling method for a packaging substrate according to any one of claims 1 to 5, characterized in that the number of laser ring cuttings in the first drilling operation is less than or equal to the number of laser ring cuttings in the second drilling operation, and the number of laser ring cuttings in the second drilling operation is less than the number of laser ring cuttings in the third drilling operation. 8.根据权利要求1至5任一项所述的封装基板镭射钻孔方法,其特征在于,所述第一钻孔操作的激光频率、所述第二钻孔操作的激光频率、所述第三钻孔操作的激光频率均相同。8 . The laser drilling method for a package substrate according to claim 1 , wherein the laser frequency of the first drilling operation, the laser frequency of the second drilling operation, and the laser frequency of the third drilling operation are all the same. 9.根据权利要求1至5任一项所述的封装基板镭射钻孔方法,其特征在于,所述介质层的材质为液晶聚合物树脂。9 . The laser drilling method for a package substrate according to claim 1 , wherein the dielectric layer is made of liquid crystal polymer resin. 10.一种封装基板,其特征在于,包括依次层叠的第一铜层、介质层、第二铜层,所述封装基板上形成有盲孔,所述盲孔的开口位于所述第一铜层,所述盲孔的底部露出所述第二铜层,所述盲孔通过权利要求1至9任一项所述的方法形成。10. A packaging substrate, characterized in that it comprises a first copper layer, a dielectric layer, and a second copper layer stacked in sequence, wherein a blind hole is formed on the packaging substrate, the opening of the blind hole is located in the first copper layer, and the bottom of the blind hole exposes the second copper layer, and the blind hole is formed by the method according to any one of claims 1 to 9.
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CN120269195A (en) * 2025-06-09 2025-07-08 广州广合科技股份有限公司 PCB blind hole processing method, device, laser drilling equipment and storage medium
CN120321876A (en) * 2025-04-10 2025-07-15 广东依顿电子科技股份有限公司 A laser drilling method for thin copper HDI circuit board

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* Cited by examiner, † Cited by third party
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CA2116589A1 (en) * 1994-02-28 1995-08-29 Malcolm Bruce Wilkie Image data integration (idi)
EP1545175A2 (en) * 2003-12-18 2005-06-22 Endicott Interconnect Technologies, Inc. Method of providing printed circuit board with conductive holes and board resulting therefrom
JP2007264135A (en) * 2006-03-27 2007-10-11 Nec Corp Laser cutting method, display device manufacturing method, and display device
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