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CN1272892A - 设置在一种非导电基材上的电路结构,特别是细微电路结构及其制造方法 - Google Patents

设置在一种非导电基材上的电路结构,特别是细微电路结构及其制造方法 Download PDF

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CN1272892A
CN1272892A CN98800775A CN98800775A CN1272892A CN 1272892 A CN1272892 A CN 1272892A CN 98800775 A CN98800775 A CN 98800775A CN 98800775 A CN98800775 A CN 98800775A CN 1272892 A CN1272892 A CN 1272892A
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格哈德·瑙恩多夫
霍斯特·维斯布洛克
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Abstract

介绍在一种非导电基材上的电路结构,特别是细微电路结构,是由一种含重金属的基体以及在该基体上的金属化层构成的,以及制造该电路结构的方法。本发明的特征在于:含重金属的基体含有重金属晶核,这是通过由受激准分子激光器发射紫外射线破坏一种非导电性有机重金属络合物生成的。重金属络合物涂敷在基材的整个微孔表面上,并在围绕电路结构的范围内构成电路的表面。本发明的电路结构的制造方法要比已知的电路结构简单。另外,沉积的金属电路的粘结性能非常好。

Description

设置在一种非导电基材上的电路结构, 特别是细微电路结构及其制造方法
本发明涉及符合权利要求1前叙部分的、在非导电基材上的电路结构,特别是细微电路结构,以及符合权利要求4前叙部分的制造电路结构的方法。
通过专业杂志“Galvanotechnik”81卷(1990),10期,特刊“LAD-最细微导体金属化的新型激光支持涂层法”,发表了在一种非导电基材上用一种醋酸钯溶液全面涂敷薄膜以制造明显小于100mm的最细微的导体结构。通过随后利用波长为248nm的受激准分子激光器进行照射在准备制作电路结构的部位使金属原子释放,作为随后的无电流金属化之用的晶核。在金属化之前仍然需要进行一道吹洗工序,以便清除在基材上涂覆的含金属的薄膜中未分解的部分。这道吹洗工序的质量对于在随后的无电流金属化过程中避免无序生长问题起决定性的作用。另外还发现,采用所述的方法不能使沉积的金属电路具有足够的粘结牢固性。
在DE 42 10 400 C1中介绍了利用一种激光器进行局部加热,从用重金属盐的混合物在基质上涂覆的薄膜直接沉积铜的方法。这种方法在热激活化学领域中有一个缺点,就是使所获得的电路结构的细度受到制约。另外,由于所涂覆的薄膜是一种导电薄膜,所以在进行金属化之前还需要进行一次费用昂贵、又有问题的吹洗过程。对于使用非导电的重金属络合物,以及用受激准分子激光器发射紫外线进行冷破坏重金属络合物来分解重金属晶核,既未作公开发表也未进行补充。
在DE 41 24 686 A1中又介绍了一种方法,在含有铜-重金属络合物的有机气相中,利用激光器辐射能的作用在一种基质上形成铜的结构沉积。这种方法的缺点在于,铜的结构沉积是在一个真空室中在惰性气体中进行的。设备和操作技术方面的昂贵费用使这种方法在惯用的印刷电路板和电路载体的领域中的广泛应用遭到抵制。
通过US 45 74 095发表了一种方法,将基质放在真空室的一种钯络合物的蒸汽中,然后通过一个窗孔用249nm的受激准分子激光器按照结构化的方式照射。由于钯的沉积是在真空室中的蒸汽相中进行的,花费也很昂贵,所以在印刷电路板和电路载体的领域中使用这种方法是不经济的。
本发明的任务是提供一种制造简单可靠的用于电路图的微细电路结构,以及进一步创造一种制造电路结构的简单可靠的方法,保证电路的微细结构化达到10μm的电路宽度和间距。
这项任务按照权利要求1和4的特征能够解决。本发明的其他实施方案参见相应附属权利要求。
按照本发明的电路结构与惯用的电路结构相比可以更为简单地制造。由于在基材的含有重金属的基体中含有重金属晶核,它是通过破坏在基材的微孔表面上涂敷的非导电的有机重金属络合物形成的,就不需要避免无序生长的问题,不用在金属化之前在含有重金属的基体上清除未经处理的部分。另外,还获得粘结性特别优越的沉积金属电路。
在按照本发明的电路结构的制造方法中通过采用一种非导电的有机重金属络合物作为在基材上涂敷的含重金属的组分,可达到在用受激准分子激光器进行紫外线照射处理之后,紧接着就能进行化学还原金属化处理。通过受激准分子激光器进行的紫外线照射处理,在准备制造的电路结构部位的重金属络合物产生裂解,分解出对部分还原金属化高活性的重金属晶核。不再需要一直成问题的吹洗工序。金属化形成边缘清晰的轮廓结构,也不会有任何不规则生长。由于形成的重金属晶核的活性很高,附带还会有利于按照所需的厚度进行准确的金属化反应。
最好是选用钯络合物或者含钯的重金属络合物。正如所见,此类重金属络合物特别适合于按照本发明的方法进行最细微的结构化处理。特别是在进行结构处理的裂化反应时很小能量密度的紫外线照射即足以够用,要比在已知的系统中称之为分解的拆开或松开的反应机理所用的小得多。这种小的能量输入的结果是决不出现烧蚀粒子,从而省去金属化前的净化过程。另外达到在结构化中每次激光器脉冲可照射比已知烧蚀技术大得多的面积。
在本发明的范围内还作这样的规定,为了从重金属络合物中分解出重金属的晶核,最好使用波长为248nm的氪氟-受激准分子激光器。这样就能够不用对络合物进行加热使其裂解。从而避免在处理范围内的物料熔融。结果在裂解出重金属晶核的范围内的边界非常清晰,转而使金属化结构边缘具有特别有利的、特别好的清晰程度,这对于最细微的导体的意义更为重要。
按照一个优选的实施方案规定,用双乙酸钯和一种有机络合剂反应,生成钯-络合物。结果发现,有利的是用具有多个配位原子如N,O,S,P的本身已知的高稳定性的多官能团的螯合剂作为有机络合剂。在本发明的范围内还进一步规定,还可以将多官能团的螯合剂与离子化基团如羟基或羧基共同配合使用。
特别能够用位阻芳香族化合物和金属络合基形成的分子结合物作为有机络合剂使用。为此优选使用下列分子式的有机络合剂。
Figure A9880077500061
原则上规定,将重金属络合物溶解于一种溶剂中,对于钯-络合物优选二甲基甲酰胺,涂布在多孔基材、或者具有多孔表面的基材上。为此可以用,例如,有微孔表面的挠性聚酰亚胺薄膜或者纸张。此时,钯-络合物会渗入物料的孔中。在随后的金属化过程中对导体群粘结有利的是多孔结构,在金属化过程中例如使用的铜在结构中生长,然后在其中以根状的形式夹持固定。这样能够达到不需要粘结层和因而有可能不需要预先对电路的宽度规定下限,这对于特别微细的结构有利。另外,由于受激准分子激光器的紫外线波长短,所以有可能用它来利用金属化晶核形成清晰的最微细结构。
另一个办法是将重金属络合物混入构成多孔结构的粘结剂中,然后在基材上涂布涂层。由于这种办法非常容易操作,可靠性又好,所以在许多用途中都是有利的。
按照本发明将一种有机非导电的重金属络合物均匀涂布在一种微孔基材上,或者混入构成多孔结构的粘结剂中,然后在基材上涂布涂层。接着用受激准分子激光器仅只在准备金属化的部位进行紫外线选择照射,分解该重金属络合物,生成金属晶核,然后在还原槽中使其进行金属沉积。此种金属沉积不但通过在微孔基材中生根固定进行,并且也通过分布在外面进行。于是形成一层粘结牢固的导体群。
按照本发明的方法不但能够与平面激光照射和掩蔽技术一起用于合理化的大批量生产,并且还能够不用掩模,例如通过NC控制导向点状聚焦激光束用于在原型或小批量生产中。
以下利用一个实施例对本发明作详细说明。
将2.24重量份的双乙酸钯溶解于100重量份的二甲基甲酰胺中。另外,将2.94重量份的下列分子式的有机络合剂投入800重量份的二甲基甲酰胺中加热溶解。
将两种溶液混合,进行反应。在此之后,在溶液冷却和生成的钯络合物沉淀之前,紧接着在溶液中浸入一块微孔聚酰亚胺薄膜。经过10小时室温干燥之后,将获得的基材用氪氟-受激准分子激光器,也就是波长为248nm的受激准分子激光器通过一个掩模照射。在受照射的部位,从络合物中分解出分布极为均匀的金属钯。在一个商业惯用的无外来电流还原铜槽中在受照射部位有选择地沉积出生根粘结牢固的铜。生成了导体群,这是一种可以使用的挠性电路。
如上所示,按照本发明的方法也能够在由其他有微孔表面的非导电材料形成的电路载体上例如,在用陶瓷或玻璃构成的基板上涂敷电路结构。

Claims (16)

1.非导电基材上的电路结构,特别是细微电路结构,它是由一种含重金属的基体以及在该基体上涂敷的金属化层构成的,其特征在于:含重金属的基体含有通过非导电性有机重金属络合物破坏产生的重金属晶核,络合物分布在基材的整个微孔表面上,并在围绕电路结构的范围内构成电路的表面。
2.如权利要求1记载的电路结构,其特征在于:重金属络合物是一种含钯的重金属络合物。
3.如权利要求1记载的电路结构,其特征在于:重金属络合物是一种钯络合物。
4.如权利要求1记载的电路结构的制造方法,其中,在一种非导电基材上涂敷一种含重金属的组分涂层,在准备产生电路结构的部位用一种受激准分子激光器的紫外光射线进行选择照射,释放重金属晶核,并在该部位进行化学还原金属化处理,其特征在于:用一种非导电有机重金属络合物作为含重金属的组分,利用受激准分子激光器的紫外线照射,使重金属络合物破坏而分解重金属晶核,基材有一微孔表面。
5.如权利要求4记载的制造方法,其特征在于:使用一种含钯的重金属络合物。
6.如权利要求4记载的制造方法,其特征在于:使用一种钯-络合物。
7.如权利要求6记载的制造方法,其特征在于:通过钯盐与一种有机络合剂反应,生成钯-络合物。
8.如权利要求6和7记载的制造方法,其特征在于:通过双乙酸钯与一种有机络合剂反应,然后进行结晶,生成钯-络合物。
9.如权利要求8记载的制造方法,其特征在于:采用一种高稳定多官能、仅只含有多个配位原子例如N,O,S,P或者还含有离子化基如羟基-或羧基的螯合剂作为有机络合剂。
10.如权利要求8和9记载的制造方法,其特征在于:采用含位阻芳香族化合物和金属络合基团的分子结合物作为有机络合剂。
11.如权利要求8,9和10记载的制造方法,其特征在于:采用下列分子式的有机络合剂:
Figure A9880077500031
12.如权利要求4至11一项或多项记载的制造方法,其特征在于:将重金属络合物溶解于溶剂中涂敷在一种多孔基材或者有多孔表面的基材上。
13.如权利要求12记载的制造方法,其特征在于:将重金属络合物涂敷在聚酰亚胺薄膜上。
14.如权利要求6,12或13记载的制造方法,其特征在于:采用二甲基甲酰胺或醋酸乙酯作为钯-络合物的溶剂。
15.如权利要求4至11一项或多项记载的制造方法,其特征在于:将重金属络合物混入一种形成多孔结构的粘结剂中,然后涂在基材上作为涂层。
16.如权利要求4至15一项或多项记载的制造方法,其特征在于:将重金属晶核用波长为248nm的氪氟-受激准分子激光进行分解。
CNB988007754A 1997-06-06 1998-06-03 设置在一种非导电基材上的电路结构,特别是细微电路结构及其制造方法 Expired - Fee Related CN1195888C (zh)

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CN1680621B (zh) * 2004-04-08 2013-04-24 恩通公司 经激光构图的塑料表面处理方法
CN101094936B (zh) * 2004-12-03 2010-09-08 3M创新有限公司 使用有图案的形貌和自组装单层的微组装
CN101684551B (zh) * 2008-09-27 2012-10-17 比亚迪股份有限公司 一种表面金属化的非金属件及其制造方法
CN104867902A (zh) * 2014-02-25 2015-08-26 西门子公司 具有两个能导电结构的电子模块
CN104244587A (zh) * 2014-04-30 2014-12-24 深圳光韵达光电科技股份有限公司 立体电路的制作方法及热固性喷涂溶液

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KR100325790B1 (ko) 2002-02-25
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WO1998055669A3 (de) 1999-03-04
WO1998055669A2 (de) 1998-12-10
JP3407890B2 (ja) 2003-05-19
JP2000502407A (ja) 2000-02-29
EP0917597A2 (de) 1999-05-26
ATE231195T1 (de) 2003-02-15
US6319564B1 (en) 2001-11-20
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KR20000068049A (ko) 2000-11-25
DE19723734C2 (de) 2002-02-07

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