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CN111902872A - 一种自终止写入电路及方法 - Google Patents

一种自终止写入电路及方法 Download PDF

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Publication number
CN111902872A
CN111902872A CN201880091692.1A CN201880091692A CN111902872A CN 111902872 A CN111902872 A CN 111902872A CN 201880091692 A CN201880091692 A CN 201880091692A CN 111902872 A CN111902872 A CN 111902872A
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circuit
termination
self
write
memory array
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CN111902872B (zh
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潘越
刘燕翔
段霑
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

本申请公开了一种自终止写入电路及方法，用于对处于不同状态的存储阵列电路通过同一个自终止写入控制电路实现自终止。本申请自终止写入电路，包括：灵敏放大器(201)和控制电路(202)；灵敏放大器(201)用于比较参考电路(203)输出的参考电压或参考电流和存储阵列电路(204)输出的电压或电流大小；控制电路(202)用于根据比较结果生成终止信号，并反馈所述终止信号至所述存储阵列电路(204)，所述终止信号用于控制所述存储阵列电路(204)停止写入P状态或AP状态。在存储阵列电路(204)完成状态写入后实现写入自终止，节省了电路的开销面积，降低了功耗。

Description

PCT国内申请，说明书已公开。

Claims (12)

  1. PCT国内申请，权利要求书已公开。
CN201880091692.1A 2018-07-02 2018-07-02 一种自终止写入电路及方法 Active CN111902872B (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112767981A (zh) * 2021-03-10 2021-05-07 中电海康无锡科技有限公司 一种用于stt-mram中的读写控制电路
CN114678048A (zh) * 2022-01-27 2022-06-28 北京大学 Mram存储单元写入电路及存储芯片
CN114999546A (zh) * 2022-05-27 2022-09-02 桂林电子科技大学 一种基于磁隧道结的自动控制电路及电子设备

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113990366B (zh) * 2021-10-27 2025-11-04 江南大学 一种应用于stt-mram的写验证电路
CN114826163B (zh) * 2022-05-16 2024-03-01 合肥工业大学 基于灵敏放大器的低功耗高性能的触发器及其工作方法
CN115831190B (zh) * 2023-02-16 2023-05-09 华中科技大学 忆阻器的自写止操作电路及自写止操作方法

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US20060227598A1 (en) * 2003-04-21 2006-10-12 Nec Corporation Magnetic random access memory using improved data read out method
US20130028010A1 (en) * 2011-07-29 2013-01-31 Qualcomm Incorporated Fast MTJ Switching Write Circuit For MRAM Array
US20140112066A1 (en) * 2012-10-18 2014-04-24 Agency For Science, Technology And Research Circuit Arrangement and Method of Forming the Same
CN103854693A (zh) * 2012-11-29 2014-06-11 台湾积体电路制造股份有限公司 磁阻式随机存取存储器（mram）差分位单元及其使用方法
CN104299645A (zh) * 2014-10-22 2015-01-21 中国科学院微电子研究所 一种阻变存储器写操作电路
CN105023603A (zh) * 2015-08-24 2015-11-04 西安电子科技大学宁波信息技术研究院 具有延时读取技术的自旋磁随机存储器自使能电路
CN106158000A (zh) * 2015-04-07 2016-11-23 华为技术有限公司 自旋转移扭矩磁存储器单元和存储器
CN110047523A (zh) * 2018-01-15 2019-07-23 塔普思科技股份有限公司 电阻性内存单元的准定压降自我中止写入方法及其电路

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US7936625B2 (en) * 2009-03-24 2011-05-03 Seagate Technology Llc Pipeline sensing using voltage storage elements to read non-volatile memory cells
CN102169722B (zh) * 2010-02-25 2014-01-08 复旦大学 降低初始化或置位操作功耗的电阻随机存储器及其操作方法
CN102169720B (zh) * 2010-02-25 2014-04-02 复旦大学 一种消除过写、误写现象的电阻随机存储器
KR102020975B1 (ko) * 2013-07-30 2019-10-18 삼성전자주식회사 반도체 메모리 장치의 전류 센스앰프 회로

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060227598A1 (en) * 2003-04-21 2006-10-12 Nec Corporation Magnetic random access memory using improved data read out method
US20130028010A1 (en) * 2011-07-29 2013-01-31 Qualcomm Incorporated Fast MTJ Switching Write Circuit For MRAM Array
US20140112066A1 (en) * 2012-10-18 2014-04-24 Agency For Science, Technology And Research Circuit Arrangement and Method of Forming the Same
CN103854693A (zh) * 2012-11-29 2014-06-11 台湾积体电路制造股份有限公司 磁阻式随机存取存储器（mram）差分位单元及其使用方法
CN104299645A (zh) * 2014-10-22 2015-01-21 中国科学院微电子研究所 一种阻变存储器写操作电路
CN106158000A (zh) * 2015-04-07 2016-11-23 华为技术有限公司 自旋转移扭矩磁存储器单元和存储器
CN105023603A (zh) * 2015-08-24 2015-11-04 西安电子科技大学宁波信息技术研究院 具有延时读取技术的自旋磁随机存储器自使能电路
CN110047523A (zh) * 2018-01-15 2019-07-23 塔普思科技股份有限公司 电阻性内存单元的准定压降自我中止写入方法及其电路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112767981A (zh) * 2021-03-10 2021-05-07 中电海康无锡科技有限公司 一种用于stt-mram中的读写控制电路
CN114678048A (zh) * 2022-01-27 2022-06-28 北京大学 Mram存储单元写入电路及存储芯片
CN114999546A (zh) * 2022-05-27 2022-09-02 桂林电子科技大学 一种基于磁隧道结的自动控制电路及电子设备

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CN115497531A (zh) 2022-12-20
CN111902872B (zh) 2022-09-16

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