CN111812945A - Wafer surface treatment method and device, storage medium and photoetching machine - Google Patents
Wafer surface treatment method and device, storage medium and photoetching machine Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 238000004381 surface treatment Methods 0.000 title claims abstract description 20
- 238000003860 storage Methods 0.000 title claims abstract description 7
- 238000001259 photo etching Methods 0.000 title abstract description 10
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
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- 238000007599 discharging Methods 0.000 claims description 16
- 238000012216 screening Methods 0.000 claims description 14
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- 238000004590 computer program Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 5
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- 238000001459 lithography Methods 0.000 claims description 4
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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Abstract
The invention relates to a wafer surface treatment method, a device, a storage medium and a photoetching machine, wherein the wafer surface treatment method comprises the following steps: acquiring a plurality of temperature values, wherein the temperature values are obtained by utilizing the temperature values of the wafer area which is measured by the temperature sensor and is positioned above the temperature sensor; determining the position of a wafer area to be processed in the wafer area based on the plurality of temperature values, wherein the wafer area to be processed is an area with residual liquid on the surface of the wafer; and removing residual liquid in the wafer area to be processed. The method can detect the area with the residual liquid on the surface of the wafer in time, remove the residual liquid in time, and is simple and effective.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer surface processing method, a wafer surface processing device, a storage medium and a photoetching machine.
Background
Semiconductor technology continues to step toward smaller process nodes driven by moore's law. The photolithography technique is the most critical production technique in the semiconductor manufacturing process, and as the semiconductor process nodes are continuously reduced, the immersion exposure processing technique is more and more applied to the semiconductor manufacturing process.
In the immersion exposure process, a high refractive index liquid, such as deionized water, is usually used to fill the space between the wafer surface and the exposure lens to improve the applicable range of the focus depth. The liquid between the wafer and the exposure lens moves along with the movement of the wafer, and the liquid flows under the action of the liquid sucking and discharging device, so that the liquid moving relative to the wafer is easy to remain on the surface of the wafer, and particularly, when an exposure area is in a corner area of the edge of the wafer, or when the liquid sucking and discharging device is abnormal, the problem that the liquid remains on the surface of the wafer is serious. The amount of the residual liquid on the wafer surface is not large, so that the exposure machine usually does not generate a liquid leakage alarm, and therefore, the process is still continued when the wafer surface has the residual liquid, but the imaging effect on the wafer surface is poor due to the influence of the residual liquid, and the semiconductor production yield is affected, thereby causing a great deal of cost and time waste.
Therefore, it is desirable to provide a method for treating a wafer surface, which can remove the residual liquid on the wafer surface in a timely and effective manner.
Disclosure of Invention
The technical problem solved by the invention is how to timely and effectively remove residual liquid on the surface of the wafer.
In order to solve the above technical problems, the present invention provides a method for processing a wafer surface, comprising: acquiring a plurality of temperature values, wherein the temperature values are obtained by measuring through a temperature sensor and are of a wafer area above the temperature sensor; and determining the position of a wafer area to be processed in the wafer area based on the temperature values, wherein the wafer area to be processed is an area with residual liquid on the surface of the wafer.
In one embodiment, before the obtaining the plurality of temperature values, the method further includes: providing a wafer carrier with a bearing surface, wherein a temperature sensor is arranged in the wafer carrier; and carrying out preset process treatment on the surface of the wafer on the bearing surface.
In one embodiment, the predetermined process treatment includes an immersion exposure treatment; the residual liquid comprises deionized or distilled water.
In one embodiment, the determining the position of the wafer area to be processed in the wafer area based on the temperature value includes: screening out abnormal temperature values in the plurality of temperature values; acquiring the position of a specific temperature sensor, wherein the specific temperature sensor is the temperature sensor measuring the abnormal temperature value; determining a location of the area of the wafer to be processed based on the location of the particular temperature sensor.
In one embodiment, the screening out abnormal temperature values from the plurality of temperature values includes: acquiring a preset temperature value threshold; and screening out the temperature values smaller than the preset temperature value threshold value from the plurality of temperature values as abnormal temperature values.
In one embodiment, the screening abnormal temperature values of the plurality of temperature values includes: calculating an average temperature value of the plurality of temperature values; obtaining a plurality of temperature difference values, wherein the temperature difference values are absolute values of differences between each temperature value and the average temperature value; acquiring a preset temperature difference threshold value; taking the temperature difference value which is greater than the preset temperature difference value threshold value in the plurality of temperature difference values as an abnormal temperature difference value; and screening out a temperature value corresponding to the abnormal temperature difference value as the abnormal temperature value.
In one embodiment, the removing the residual liquid in the wafer area to be processed includes: providing a liquid sucking and releasing device, wherein the liquid sucking and releasing device is provided with a water discharging pipeline, a water sucking pipeline and a gas pipeline; closing the water discharge pipeline and the gas pipeline, and opening the water suction pipeline; and sucking residual liquid in the wafer area to be processed by using the water sucking pipeline.
In one embodiment, the method further comprises: calculating the time length to be processed of each wafer area to be processed based on the plurality of temperature values; and translating the liquid sucking and releasing device to each wafer area to be processed, and staying for the corresponding time length to be processed.
In one embodiment, the temperature sensors are multiple, the wafer carrier has a central axis, and the center of the carrying surface is located on the central axis; the plurality of temperature sensors includes: a first number of temperature sensors located at an edge region of the wafer carrier, and the first number of temperature sensors are evenly distributed around the central axis.
In one embodiment, the plurality of temperature sensors further comprises: a second number of temperature sensors located between the first number of temperature sensors and the central axis, the second number of temperature sensors being evenly distributed about the central axis.
In one embodiment, after removing the residual liquid in the wafer area to be processed, the method further includes: a re-detection step, wherein in the re-detection step, the temperature of a wafer area above the temperature sensor is measured by using the temperature sensor, and a plurality of processed temperature values are obtained; and a judging step of judging whether the residual liquid in the wafer area to be processed is completely removed or not based on the plurality of processed temperature values.
In one embodiment, the temperature sensor is single, and before the acquiring of the plurality of temperature values, the method further includes: and moving the temperature sensor to a plurality of positions to measure the temperature values.
The present invention also provides a wafer surface treatment apparatus, comprising: the wafer carrier is provided with a bearing surface, and the bearing surface is used for bearing a wafer; the temperature sensors are distributed in the wafer carrier and used for respectively measuring the temperature values of a plurality of wafer areas of the wafers, which are positioned above the temperature sensors; the controller is used for determining a wafer area to be processed in the wafer area based on the temperature value, wherein the wafer area to be processed is an area with residual liquid on the surface of the wafer; and the liquid sucking and releasing device is positioned above the wafer carrier and is used for removing residual liquid in the wafer area to be processed.
The invention also provides a computer readable storage medium, on which a computer program is stored, which when processed implements the steps of the wafer surface processing method described above.
The invention also provides a lithography machine, which comprises a memory, a processor and a computer program stored on the memory and capable of running on the processor, wherein the processor executes the program to realize the steps of the wafer surface processing method.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
according to the technical scheme of the wafer surface processing method, a plurality of temperature values are obtained, wherein the temperature values are related to whether residual liquid exists on the surface of a wafer or not, and the temperature values are the temperature values of a wafer area which is measured by a temperature sensor and is positioned above the temperature sensor; and determining the position of a wafer area to be processed based on the temperature value, wherein the wafer area to be processed is an area with residual liquid on the surface of the wafer, and then removing the residual liquid in the wafer area to be processed. In the invention, the temperature sensor is adopted to detect and obtain the wafer area with the residual liquid and remove the residual liquid, so that the residual liquid on the surface of the wafer can be effectively removed in time, the adverse effect of the residual liquid on the subsequent process is avoided, for example, the adverse effect of the residual liquid on the photoetching pattern formed on the wafer is avoided, the quality of the photoetching pattern is improved, and the production yield of the semiconductor is improved.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the figures in which like reference numerals refer to similar elements and which are not to scale unless otherwise specified.
Fig. 1 is a schematic top view of a wafer carrier used in a wafer surface processing method according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart illustrating a method for processing a surface of a wafer according to one embodiment of the present invention;
FIG. 3 is a schematic flow chart illustrating a wafer surface processing method according to another embodiment of the present invention;
fig. 4 to 6 are schematic top-view structural diagrams corresponding to a process of removing residual liquid in a wafer region to be processed by a liquid sucking and discharging device according to an embodiment of the present invention.
Detailed Description
As can be seen from the background art, there is a need to provide a method for treating a wafer surface to remove residual water on the wafer surface in a timely and effective manner.
It will be understood that, as used herein, the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first number may be termed a second number, and, similarly, a second number may be termed a first number, without departing from the scope of the present invention. The first number and the second number are both numbers, but they are not the same number.
In order to solve the above problems, the present invention provides a wafer surface treatment method, which uses a temperature sensor to position a region having residual liquid on the wafer surface, defines the region as a wafer region to be treated, and then removes the residual liquid in the wafer region to be treated, thereby avoiding the residual liquid from causing adverse effects on the subsequent semiconductor process, and improving the production yield.
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in various embodiments of the invention, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.
Fig. 1 is a schematic top view of a wafer carrier used in a wafer surface processing method according to an embodiment of the present invention.
Referring to fig. 1, a wafer carrier 100 having a carrying surface is provided, and a plurality of temperature sensors 101 are distributed in the wafer carrier 100. It will be understood that the structure of the wafer carrier shown in fig. 1 is merely a schematic illustration of a portion of the structure associated with the present application and does not constitute a limitation on the wafer carrier to which the present application is applied, and a particular wafer carrier may include more or fewer components than those shown, or some components may be combined, or have a different distribution of components. For example, the temperature sensors 101 in the wafer carrier 100 in the figure may have different distributions.
In a semiconductor manufacturing process, the wafer carrier 100 is used for carrying wafers, and the wafer carrier 100 may also be referred to as a wafer carrier (wafer chuck). The wafer carrier 100 can be used for carrying and moving wafers to a designated area in addition to carrying wafers.
In this embodiment, the wafer carrier 100 may be used in immersion exposure, wafer cleaning, and other processes. Specifically, during the immersion exposure process, the carrying surface of the wafer carrier 100 carries the wafer.
The wafer is generally circular in shape, and for this reason, the carrying surface is also circular in shape in this embodiment. The wafer carrier 100 has a central axis, and the center of the carrying surface is located on the central axis. The central axis may be a virtual axis perpendicular to the carrying surface of the wafer carrier 100.
In a semiconductor manufacturing process, it is usually necessary to heat the wafer via the wafer carrier 100, for example, the wafer carrier 100 itself is provided with a heating plate, and the wafer is heated by the heating plate, or the wafer carrier 100 moves the wafer above the heating plate, and the wafer is indirectly heated by the heating plate by heating the wafer carrier 100. The temperature sensor 101 is used to obtain the temperature value of each region of the wafer heated by the wafer carrier 100, so as to determine whether the process parameters of the heating process are appropriate, and adjust the process parameters in time.
Also, in one embodiment, the functions of the temperature sensor 101 further include: the temperature sensor is used for subsequently measuring the temperature of the wafer area above the temperature sensor 101 in the wafer, and obtaining a plurality of temperature values, thereby positioning the wafer area to be processed, namely the area of the wafer surface with residual liquid.
In one embodiment, the plurality of temperature sensors 101 includes: a first number of temperature sensors 101 located at an edge region of the wafer carrier 100, and the first number of temperature sensors 101 are evenly distributed around a central axis of the wafer carrier 100.
Specifically, a first circular ring concentric with the circle center of the bearing surface is enclosed among the first number of temperature sensors 101, and in the first number of temperature sensors 101, included angles between adjacent temperature sensors 101 and the circle center of the bearing surface are equal.
The plurality of temperature sensors 101 further includes: a second number of temperature sensors 101, the second number of temperature sensors 101 being located between the first number of temperature sensors 101 and the central axis, the second number of temperature sensors 101 being evenly distributed around the central axis.
Specifically, a second circular ring concentric with the circle center of the bearing surface is formed by the second temperature sensors 101 in a surrounding manner, and the radius of the second circular ring is smaller than that of the first circular ring; in the second plurality of temperature sensors 101, included angles between adjacent temperature sensors 101 and the circle center of the bearing surface are equal.
The plurality of temperature sensors 101 further includes: a single temperature sensor 101 located on the central axis.
In one embodiment, since the edge area of the wafer surface is prone to have residual liquid during the immersion exposure process, the temperature of the edge area of the wafer surface may be measured with emphasis on the first amount being greater than the second amount. For example, the total number of temperature sensors 101 may be 18, wherein the first number may be 12 and the second number may be 5.
It should be noted that, in other embodiments, the plurality of temperature sensors may further include: the temperature sensors of the third quantity are located between the temperature sensors of the second quantity and the central axis, the temperature sensors of the third quantity are uniformly distributed around the central axis, and the third quantity is smaller than the second quantity.
Specifically, a third ring concentric with the circle center of the bearing surface is enclosed among the temperature sensors in the third number, and the radius of the third ring is smaller than that of the second ring; and in the third quantity of temperature sensors, the included angles between the adjacent temperature sensors and the circle center of the bearing surface are equal.
It should be noted that, in other embodiments, the total number, the first number and the second number of the temperature sensors may be reasonably set according to the size of the carrying surface of the wafer carrier.
It should also be noted that in other embodiments, the temperature sensor may be a single temperature sensor, and the temperature value may be measured by moving the temperature sensor to a plurality of positions.
The method for processing the surface of the wafer according to the present invention will be described in detail with reference to the flow chart. Fig. 2 is a flowchart illustrating a wafer surface processing method according to an embodiment of the invention. Referring to fig. 2, the method includes:
step S101, obtaining a plurality of temperature values, wherein the temperature values are the temperature values of the wafer area located above the temperature sensor and obtained through measurement of the temperature sensor.
One or more temperature sensors distributed in the wafer carrier can be used for measuring the temperature of the wafer area above the temperature sensors to obtain the temperature value of the corresponding wafer area.
Step S102, determining the position of a wafer area to be processed in the wafer area based on the plurality of temperature values, wherein the wafer area to be processed is an area with residual liquid on the surface of the wafer.
If residual liquid exists in the wafer area on the surface of the wafer, the temperature value of the wafer area is lower than that of other wafer areas. The region of the surface of the wafer having residual liquid can be determined based on the lower of the plurality of obtained temperature values.
Step S103, removing residual liquid in the wafer area to be processed.
Residual liquid in the wafer area to be processed can be removed in a directional mode by controlling the liquid sucking and discharging device above the wafer carrier.
In one embodiment, the step of removing residual liquid from the wafer area to be processed may also be performed in combination with other factors.
In this embodiment, the temperature sensor is used to detect and obtain the wafer region with the residual liquid, and the residual liquid is removed, so that the residual liquid on the surface of the wafer can be timely and effectively removed, thereby avoiding adverse effects of the residual liquid on the subsequent process, for example, preventing the photolithographic pattern formed on the wafer from being adversely affected by the residual liquid, and improving the quality of the photolithographic pattern, thereby improving the yield of semiconductor production.
Fig. 3 is a schematic flow chart of a wafer surface processing method according to another embodiment of the invention. Referring to fig. 3, the method includes:
step S201, a wafer carrier having a carrying surface is provided, and a temperature sensor is disposed in the wafer carrier.
Step S202, a predetermined process is performed on the wafer surface of the wafer placed on the carrying surface.
In this embodiment, the predetermined process may be an immersion exposure process. After the immersion exposure treatment is finished, residual liquid, such as deionized water, distilled water and the like, can be present on the surface of the wafer, and if the residual liquid is not removed in time, the quality of a subsequent photoetching pattern formed on the surface of the wafer is correspondingly influenced, and the production yield is reduced.
In other embodiments, the predetermined process may be a cleaning process or other semiconductor process.
Step S203, obtaining a plurality of temperature values, where the temperature values are the temperature values measured by the temperature sensor 101 and located in the wafer region above the temperature sensor 101.
Specifically, after the predetermined process is finished, the temperature of the wafer region above the temperature sensor 101 is measured by using each temperature sensor. For example, when the number of the temperature sensors 101 is 18, 18 temperature values can be obtained accordingly. It is understood that the number of temperature sensors 101 may be more or less.
In one embodiment, a mapping table may also be created to record the location of the temperature sensor and the temperature value.
And step S204, screening abnormal temperature values in the temperature values.
Step S205, a position of the specific temperature sensor 101 that measures the abnormal temperature value is acquired.
In one embodiment, the location of the temperature sensor having a mapping relationship with the abnormal temperature value may be acquired based on the created mapping table.
Step S206, determining the position of the wafer area to be processed based on the position of the specific temperature sensor.
In one embodiment, the method for filtering out the abnormal temperature value of the plurality of temperature values comprises the following steps: calculating an average temperature value of the plurality of temperature values; acquiring a plurality of temperature difference values, wherein the temperature difference value is the absolute value of the difference between each temperature value and the average temperature value; acquiring a preset temperature difference threshold value; taking a temperature difference value smaller than a preset temperature difference value threshold in the plurality of temperature difference values as an abnormal temperature difference value; and screening out the temperature value corresponding to the abnormal temperature difference value as an abnormal temperature value.
Wherein, the temperature difference threshold value can be determined according to the actual process condition. The method for obtaining the abnormal temperature value by comparing each temperature difference value with the preset temperature difference value threshold value is beneficial to improving the accuracy of judging the position of the area with the residual liquid on the surface of the wafer, so that each wafer area with the residual liquid can be positioned.
In another embodiment, the method for screening out an abnormal temperature value from a plurality of temperature values may further include: acquiring a preset temperature value threshold; and screening out a temperature value smaller than a preset temperature value threshold value from the plurality of temperature values as an abnormal temperature value.
Step S207, removing the residual liquid in the wafer area to be processed.
After acquiring the position of the region of the wafer surface having the residual liquid, the residual liquid needs to be removed.
In one embodiment, a method for removing residual liquid from an area of a wafer to be processed comprises: providing a liquid sucking and releasing device, wherein the liquid sucking and releasing device is provided with a water discharging pipeline, a water sucking pipeline and a gas pipeline; closing the water discharge pipeline and the gas pipeline, and opening the water suction pipeline; the water suction pipeline is used for sucking the residual liquid in the wafer area to be processed.
It should be noted that the liquid sucking and discharging device may be a liquid sucking and discharging device used in the immersion exposure process, so that the removal of the residual liquid can be completed by using a working machine used in the existing immersion exposure process, and no additional processing machine is required.
It can be understood that the water in the water suction pipeline and the waterproof pipeline in the liquid suction and discharge device is a general term, when the residual liquid is deionized water or distilled water, the liquid sucked by the water suction pipeline is water, and the liquid discharged by the water discharge pipeline is water; when the residual liquid is liquid except water, the water suction pipeline sucks corresponding residual liquid, and the water discharge pipeline discharges the corresponding residual liquid.
After the preset process treatment, whether residual liquid exists on the surface of the wafer is judged by measuring the temperature value of the wafer area, and the wafer area with the residual liquid is positioned, so that the residual liquid in the wafer area is removed, and the adverse effect of the residual liquid on the subsequent process steps is avoided. For example, in the embodiment, after the immersion exposure treatment, the residual liquid on the surface of the wafer can be effectively removed, and the residual liquid is prevented from causing adverse effects on the lithography pattern formed on the wafer.
It should be understood that although the various steps in the flowcharts of fig. 2 and 3 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in fig. 2 and 3 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performing the sub-steps or stages is not necessarily sequential, but may be performed in turn or alternately with other steps or at least some of the sub-steps or stages of other steps.
For the same wafer, there may be multiple regions of the wafer to be processed, and each region of the wafer to be processed has an amount of residual liquid that is not exactly the same; and the temperature value of the wafer area to be processed is influenced by the amount of the residual liquid, and the larger the amount of the residual liquid is, the lower the temperature value of the wafer area to be processed is, and therefore, the larger the abnormal temperature difference is.
To this end, in one embodiment, the wafer surface treatment method further includes: calculating the time length to be processed of each wafer area to be processed based on a plurality of temperature values; and translating the liquid sucking and releasing device to each wafer area to be processed, and staying for a corresponding duration to be processed.
Specifically, based on the specific value of the abnormal temperature difference, the retention time of the liquid sucking and discharging device and the time of opening the water sucking pipeline are adjusted, and the residual liquid in the wafer area to be processed can be removed within the corresponding time period to be processed. For example, the larger the abnormal temperature difference corresponding to the wafer area to be processed is, the more the residual liquid is in the wafer area to be processed, the longer the corresponding liquid sucking and discharging device stays on the surface of the wafer to be processed, that is, the longer the corresponding time period to be processed is.
Fig. 4 to 6 are schematic top-view structural diagrams corresponding to a process of removing residual liquid in a wafer region to be processed by a liquid sucking and discharging device according to an embodiment of the present invention. In the following, the wafer surface having three regions to be processed is taken as an example, and it can be understood that the positions and the number of the regions to be processed on the wafer surface are based on actual measurement; in fig. 4 and 6, the wafer to be processed is shown in a circular shape by a dotted line, and the liquid suction and discharge device is shown in a square shape, but the specific shapes of the wafer to be processed and the liquid suction and discharge device are not limited thereto.
Referring to fig. 4, a wafer 200 may be carried on the carrying surface of the wafer carrier. The first wafer area 201 to be processed, the second wafer area 202 to be processed and the third wafer area 203 to be processed on the surface of the wafer 200 can be determined by the aforementioned embodiments, and the first wafer area 201 to be processed can be obtained by positioning the first temperature sensor at the corresponding position in the wafer carrier, the second wafer area 202 to be processed can be obtained by positioning the second temperature sensor at the corresponding position in the wafer carrier, and the third wafer area 203 to be processed can be obtained by positioning the third temperature sensor at the corresponding position in the wafer carrier. The first time period to be processed corresponding to the first wafer area to be processed 201, the second time period to be processed corresponding to the second wafer area to be processed 202, and the third time period to be processed corresponding to the third wafer area to be processed 203 can also be calculated and obtained by the method in the foregoing embodiment.
Firstly, the liquid suction and discharge device 20 is translated to the first wafer area 201 to be processed, and stays in the first wafer area 201 for a first time period to be processed, so as to ensure that the residual liquid on the first wafer area 201 to be processed is removed.
Next, referring to fig. 4 and fig. 5, the liquid sucking and discharging device 20 is translated from the first wafer area 201 to the second wafer area 202 along the direction of AA1, and stays in the second wafer area 202 for a second waiting time to ensure that the residual liquid on the second wafer area 202 is removed.
Then, referring to fig. 5 and fig. 6 in combination, the liquid sucking and discharging device 20 is translated from the second wafer area to be processed 202 to the third wafer area to be processed 203 along the BB1 direction, and stays in the third wafer area to be processed 203 for a third processing time period, so as to ensure that the residual liquid on the third wafer area to be processed 203 is removed.
It should be noted that, in this embodiment, for example, according to the order of the first wafer area to be processed 201, the second wafer area to be processed 202, and the third wafer area to be processed 203, the liquid sucking and releasing device 20 is moved to the position above the corresponding wafer area to be processed to remove the residual liquid, in other embodiments, the residual liquid in the third wafer area to be processed 203 may be removed first, and then the residual liquid in the second wafer area to be processed 202 may be removed.
It should be noted that, the wafer surface processing method provided in this embodiment can also be used to monitor whether the temperature sensor 101 is abnormal. For example, a certain amount of residual liquid is left in a preset wafer region on the wafer surface, whether the preset wafer region can be located by the wafer surface processing method in the above embodiments and the certain amount of residual liquid is removed is determined, and if the preset wafer region cannot be located, it indicates that the temperature sensor 101 is abnormal; when the certain amount of residual liquid cannot be removed, it indicates that there is an abnormality in the temperature sensor 101 or the liquid suction/discharge device.
After removing the residual liquid in the wafer area to be processed, the method further comprises the following steps: a re-detection step, in which the temperature sensor 101 is used to measure the temperature of the wafer region above the temperature sensor 101 again to obtain a plurality of processed temperature values; and a judging step of judging whether the residual liquid in the wafer area to be processed is completely removed or not based on the plurality of processed temperature values.
The method for determining whether the residual liquid in the wafer area to be processed is completely removed may refer to the method for obtaining the position of the wafer area to be processed. If the position of the wafer area to be processed in the wafer area cannot be determined based on the plurality of temperature values, for example, if there is no abnormal temperature value smaller than the preset temperature value threshold, it is determined that the residual liquid in the wafer area to be processed has been completely removed. In one embodiment, if the position of the wafer area to be processed in the wafer area can still be determined based on the plurality of temperature values, which indicates that the residual liquid in the wafer area to be processed has not been completely removed, the step of removing the residual liquid in the wafer area to be processed may be repeated again until the residual liquid in the wafer area to be processed is completely removed.
The wafer surface treatment method provided by the embodiment can also be used for judging whether the water absorption function of the liquid absorption and release device is intact. Specifically, when it is determined that the residual liquid in the wafer region to be processed is completely removed, the water absorption function of the liquid absorption and release device may be considered to be intact.
It should be noted that, in other embodiments, when the temperature sensor is single, before acquiring a plurality of temperature values, the method further includes: and moving the temperature sensor to a plurality of positions to measure the temperature values, and acquiring a plurality of temperature values. Through a plurality of measurements by the temperature sensor, a temperature value corresponding to each measured position can be obtained. The mapping table can also be created to record the mapping relationship between the measured position and the temperature value, and the measured position having the mapping relationship with the abnormal temperature value can be obtained based on the created mapping table.
In other embodiments, the number of the temperature sensors may be a predetermined number, each temperature sensor corresponds to one or more positions, and before acquiring the plurality of temperature values, the method further includes: and successively moving the temperature sensor to one or more corresponding positions to measure the temperature values, and acquiring a plurality of temperature values.
Correspondingly, the invention also provides a wafer surface treatment device which is used for realizing the wafer surface treatment method. In one embodiment, a wafer surface processing apparatus includes: the wafer carrier is provided with a bearing surface, and the bearing surface is used for bearing a wafer; the temperature sensors are distributed in the wafer carrier and used for respectively measuring the temperature values of a plurality of wafer areas of the wafer, which are positioned above the temperature sensors; the controller is used for determining a wafer area to be processed in the wafer area based on the temperature value, wherein the wafer area to be processed is an area with residual liquid on the surface of the wafer; and the liquid sucking and releasing device is positioned above the wafer carrier and is used for removing residual liquid in the wafer area to be processed.
For a detailed description of the wafer carrier, the temperature sensor and the liquid sucking and discharging device, reference may be made to the corresponding description of the previous embodiment, and further description is omitted here.
In one embodiment, the controller may further push the warning information after determining the position of the wafer area to be processed in the wafer area, so that a process engineer may perform manual investigation on the warning wafer and determine whether to perform the step of removing the residual liquid from the wafer area to be processed. When the controller receives the removing instruction sent by the process engineer, the step of removing the residual liquid in the wafer area to be processed is executed. By removing the residual liquid based on the removal instruction, the situation of mistaken removal can be avoided, so that the process of wafer surface treatment is more flexible.
In this embodiment, the controller is connected to the temperature sensor and to the liquid sucking and discharging device. The controller has the following functions: on one hand, the time length to be processed of each wafer area to be processed is calculated based on the temperature value; and on the other hand, controlling the liquid sucking and releasing device to move horizontally to each wafer area to be processed and stay for a corresponding duration to be processed.
The wafer surface treatment device provided by the embodiment can detect and acquire the wafer area with the residual liquid on the wafer surface by adopting the temperature sensor, and then remove the residual liquid, thereby avoiding the adverse effect of the residual liquid on the wafer surface on the subsequent process.
Correspondingly, the invention further provides a photoetching machine which comprises the wafer surface processing device provided by each embodiment.
Accordingly, the present invention also provides a computer readable storage medium, on which a computer program is stored, which when executed by a processor, implements the steps of the wafer surface processing method provided by the foregoing embodiments.
Accordingly, the present invention further provides a lithography machine, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and when the processor executes the computer program, the steps of the wafer surface processing method provided by the foregoing embodiments are implemented.
The photoetching machine provided by the invention can find the area with the residual liquid on the surface of the wafer in time, remove the residual liquid and improve the photoetching imaging effect.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in practice. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (15)
1. A wafer surface treatment method is characterized by comprising the following steps:
acquiring a plurality of temperature values, wherein the temperature values are obtained by measuring through a temperature sensor and are of a wafer area above the temperature sensor;
determining the position of a wafer area to be processed in the wafer area based on the temperature values, wherein the wafer area to be processed is an area with residual liquid on the surface of the wafer;
and removing residual liquid in the wafer area to be processed.
2. The wafer surface processing method of claim 1, further comprising, before the obtaining the plurality of temperature values: providing a wafer carrier with a bearing surface, wherein a temperature sensor is arranged in the wafer carrier; and carrying out preset process treatment on the surface of the wafer on the bearing surface.
3. The wafer surface treatment method according to claim 2, wherein the predetermined process treatment comprises an immersion exposure treatment; the residual liquid comprises deionized or distilled water.
4. The wafer surface processing method of claim 1, wherein the determining the location of the wafer area to be processed in the wafer area based on the temperature value comprises: screening out abnormal temperature values in the plurality of temperature values; acquiring the position of a specific temperature sensor, wherein the specific temperature sensor is the temperature sensor measuring the abnormal temperature value; determining a location of the area of the wafer to be processed based on the location of the particular temperature sensor.
5. The wafer surface treatment method according to claim 4, wherein the screening of the abnormal temperature value out of the plurality of temperature values comprises: acquiring a preset temperature value threshold; and screening out the temperature values smaller than the preset temperature value threshold value from the plurality of temperature values as abnormal temperature values.
6. The wafer surface processing method of claim 4, wherein the screening for abnormal temperature values of the plurality of temperature values comprises: calculating an average temperature value of the plurality of temperature values; obtaining a plurality of temperature difference values, wherein the temperature difference values are absolute values of differences between each temperature value and the average temperature value; acquiring a preset temperature difference threshold value; taking the temperature difference value which is greater than the preset temperature difference value threshold value in the plurality of temperature difference values as an abnormal temperature difference value; and screening out a temperature value corresponding to the abnormal temperature difference value as the abnormal temperature value.
7. The wafer surface treatment method of claim 1, wherein the removing the residual liquid from the wafer area to be treated comprises: providing a liquid sucking and releasing device, wherein the liquid sucking and releasing device is provided with a water discharging pipeline, a water sucking pipeline and a gas pipeline; closing the water discharge pipeline and the gas pipeline, and opening the water suction pipeline; and sucking residual liquid in the wafer area to be processed by using the water sucking pipeline.
8. The wafer surface treatment method of claim 7, further comprising: calculating the time length to be processed of each wafer area to be processed based on the plurality of temperature values; and translating the liquid sucking and releasing device to each wafer area to be processed, and staying for the corresponding time length to be processed.
9. The method of claim 1, wherein the plurality of temperature sensors are provided, the wafer carrier has a central axis, and a center of the carrying surface is located on the central axis; the plurality of temperature sensors includes: a first number of temperature sensors located at an edge region of the wafer carrier, and the first number of temperature sensors are evenly distributed around the central axis.
10. The wafer surface processing method of claim 9, wherein the plurality of temperature sensors further comprises: a second number of temperature sensors located between the first number of temperature sensors and the central axis, the second number of temperature sensors being evenly distributed about the central axis.
11. The wafer surface treatment method of claim 1, further comprising, after removing the residual liquid from the wafer area to be treated: a re-detection step, wherein in the re-detection step, the temperature of a wafer area above the temperature sensor is measured by using the temperature sensor, and a plurality of processed temperature values are obtained; and a judging step of judging whether the residual liquid in the wafer area to be processed is completely removed or not based on the plurality of processed temperature values.
12. The wafer surface processing method of claim 1, wherein the temperature sensor is single, and further comprising, before the obtaining the plurality of temperature values: and moving the temperature sensor to a plurality of positions to measure the temperature values.
13. A wafer surface treatment apparatus, comprising:
the wafer carrier is provided with a bearing surface, and the bearing surface is used for bearing a wafer;
the temperature sensors are distributed in the wafer carrier and used for respectively measuring the temperature values of a plurality of wafer areas of the wafers, which are positioned above the temperature sensors;
the controller is used for determining a wafer area to be processed in the wafer area based on the temperature value, wherein the wafer area to be processed is an area with residual liquid on the surface of the wafer;
and the liquid sucking and releasing device is positioned above the wafer carrier and is used for removing residual liquid in the wafer area to be processed.
14. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the wafer surface processing method according to any one of claims 1 to 12.
15. A lithography machine comprising a memory, a processor and a computer program stored on the memory and executable on the processor, wherein the processor when executing the program performs the steps of the wafer surface treatment method according to any one of claims 1 to 12.
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