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CN111812902B - Array substrate, display panel and display device - Google Patents

Array substrate, display panel and display device Download PDF

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CN111812902B
CN111812902B CN202010749492.XA CN202010749492A CN111812902B CN 111812902 B CN111812902 B CN 111812902B CN 202010749492 A CN202010749492 A CN 202010749492A CN 111812902 B CN111812902 B CN 111812902B
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shift register
register unit
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array substrate
capacitor
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CN111812902A (en
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金慧俊
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Shanghai AVIC Optoelectronics Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays

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  • Crystallography & Structural Chemistry (AREA)
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  • Theoretical Computer Science (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本申请公开了一种阵列基板、显示面板及显示装置。阵列基板包括显示区和围绕显示区的非显示区;显示区包括多条栅极线;非显示区包括移位寄存器组以及与移位寄存器组至少一端部级联的至少一级虚拟移位寄存器单元,移位寄存器组包括多个级联的移位寄存器单元,各虚拟移位寄存器单元及各移位寄存器单元中的晶体管的数量、电容的数量,以及各元器件之间的电连接关系相同;虚拟移位寄存器单元中第一输出驱动晶体管的沟道宽长比小于移位寄存器单元中第二输出驱动晶体管的沟道宽长比,以使得虚拟移位寄存器单元的透光率大于移位寄存器单元的透光率。根据本申请实施例,能够在不影响框胶固化效果的同时,实现窄边框。

Figure 202010749492

The application discloses an array substrate, a display panel and a display device. The array substrate includes a display area and a non-display area surrounding the display area; the display area includes a plurality of gate lines; the non-display area includes a shift register group and at least one stage of virtual shift register cascaded with at least one end of the shift register group unit, the shift register group includes a plurality of cascaded shift register units, the number of transistors in each virtual shift register unit and each shift register unit, the number of capacitors, and the electrical connection relationship between each component are the same ; The channel width-to-length ratio of the first output drive transistor in the virtual shift register unit is less than the channel width-to-length ratio of the second output drive transistor in the shift register unit, so that the light transmittance of the virtual shift register unit is greater than the shift The light transmittance of the register cell. According to the embodiment of the present application, a narrow frame can be realized without affecting the curing effect of the sealant.

Figure 202010749492

Description

阵列基板、显示面板及显示装置Array substrate, display panel and display device

技术领域technical field

本申请涉及显示技术领域,具体涉及一种阵列基板、显示面板及显示装置。The present application relates to the field of display technology, in particular to an array substrate, a display panel and a display device.

背景技术Background technique

随着电子技术的不断发展,各类显示器应运而生,相应地,显示技术也呈现日新月异的变革。在诸多显示技术中,显示面板的窄边框化亦成为时下人们追求的主流显示效果之一,窄边框的显示面板在提供更佳的显示效果的同时,能够提供更佳的视觉体验,成为显示领域研究的热点。With the continuous development of electronic technology, various displays emerge as the times require, and correspondingly, display technology is also undergoing rapid changes. Among many display technologies, the narrow bezel of the display panel has become one of the mainstream display effects that people are pursuing nowadays. The display panel with narrow bezel can not only provide better display effect, but also provide a better visual experience, and has become a major trend in the display field. research hotspot.

显示面板可以包括直线段边缘和圆弧形边缘,栅极驱动电路中的虚拟移位寄存器通常与显示面板的圆弧形边缘相邻,但是现有的虚拟移位寄存器无法直接置于显示面板圆弧形边缘处的框胶下方,不利于实现显示面板的窄边框。The display panel can include straight line segment edges and arc-shaped edges. The virtual shift register in the gate drive circuit is usually adjacent to the arc-shaped edge of the display panel, but the existing virtual shift register cannot be directly placed on the display panel circle. The bottom of the frame glue at the curved edge is not conducive to realizing the narrow frame of the display panel.

申请内容application content

本申请实施例提供了一种阵列基板、显示面板及显示装置。Embodiments of the present application provide an array substrate, a display panel, and a display device.

第一方面,本申请实施例提供一种阵列基板,其包括:显示区和围绕显示区的非显示区;显示区包括多条栅极线;非显示区包括移位寄存器组以及与移位寄存器组至少一端部级联的至少一级虚拟移位寄存器单元,移位寄存器组包括多个级联的移位寄存器单元,各移位寄存器单元的输出端与各自对应的栅极线电连接;各虚拟移位寄存器单元及各移位寄存器单元均包括多个晶体管和多个电容,且各虚拟移位寄存器单元及各移位寄存器单元中的晶体管的数量、电容的数量,以及各元器件之间的电连接关系相同;虚拟移位寄存器单元包括第一输出驱动晶体管,移位寄存器单元包括与第一输出驱动晶体管连接关系相同的第二输出驱动晶体管,第一输出驱动晶体管的沟道宽长比小于第二输出驱动晶体管的沟道宽长比,以使得虚拟移位寄存器单元的透光率大于移位寄存器单元的透光率。In the first aspect, an embodiment of the present application provides an array substrate, which includes: a display area and a non-display area surrounding the display area; the display area includes a plurality of gate lines; the non-display area includes a shift register group and a shift register At least one level of virtual shift register units cascaded at least one end of the group, the shift register group includes a plurality of cascaded shift register units, and the output terminals of each shift register unit are electrically connected to their corresponding gate lines; The virtual shift register unit and each shift register unit include multiple transistors and multiple capacitors, and each virtual shift register unit and the number of transistors in each shift register unit, the number of capacitors, and the The electrical connection relationship is the same; the virtual shift register unit includes a first output drive transistor, the shift register unit includes a second output drive transistor with the same connection relationship as the first output drive transistor, and the channel width-to-length ratio of the first output drive transistor is smaller than the channel width-to-length ratio of the second output driving transistor, so that the light transmittance of the virtual shift register unit is greater than the light transmittance of the shift register unit.

第二方面,本申请提供一种显示面板,其包括如第一方面实施例所述的阵列基板。In a second aspect, the present application provides a display panel, which includes the array substrate as described in the embodiment of the first aspect.

第三方面,本申请提供一种显示装置,其包括如第二方面实施例所述的显示面板。In a third aspect, the present application provides a display device, which includes the display panel as described in the embodiment of the second aspect.

根据本申请实施例提供的阵列基板、显示面板及显示装置,为了提高虚拟移位寄存器单元的透光率,调整了虚拟移位寄存器单元中第一输出驱动晶体管的沟道宽长比。具体的,将虚拟移位寄存器单元中第一输出驱动晶体管的沟道宽长比设置为小于移位寄存器单元中第二输出驱动晶体管的沟道宽长比,从而使得虚拟移位寄存器单元的透光率大于移位寄存器单元的透光率。由于虚拟移位寄存器单元的透光率比较大,可以将虚拟移位寄存器单元直接置于框胶下方,能够在不影响框胶固化效果的同时,实现窄边框。According to the array substrate, display panel and display device provided by the embodiments of the present application, in order to improve the light transmittance of the virtual shift register unit, the channel width-to-length ratio of the first output driving transistor in the virtual shift register unit is adjusted. Specifically, the channel width-to-length ratio of the first output driving transistor in the virtual shift register unit is set to be smaller than the channel width-to-length ratio of the second output driving transistor in the shift register unit, so that the transparency of the virtual shift register unit The light rate is greater than the light transmittance of the shift register unit. Since the light transmittance of the virtual shift register unit is relatively large, the virtual shift register unit can be placed directly under the frame glue, which can achieve a narrow frame without affecting the curing effect of the frame glue.

附图说明Description of drawings

通过阅读以下参照附图对非限制性实施例所作的详细描述,本申请的其它特征、目的和优点将会变得更明显,其中,相同或相似的附图标记表示相同或相似的特征,附图并未按照实际的比例绘制。Other features, objects and advantages of the present application will become more apparent by reading the following detailed description of non-limiting embodiments with reference to the accompanying drawings, wherein the same or similar reference numerals represent the same or similar features, appended Figures are not drawn to scale.

图1示出根据本申请一种实施例提供的阵列基板的结构示意图;FIG. 1 shows a schematic structural diagram of an array substrate provided according to an embodiment of the present application;

图2示出根据本申请另一种实施例提供的阵列基板的结构示意图;FIG. 2 shows a schematic structural diagram of an array substrate provided according to another embodiment of the present application;

图3示出根据本申请一种实施例提供的移位寄存器单元的电路结构示意图;FIG. 3 shows a schematic diagram of a circuit structure of a shift register unit provided according to an embodiment of the present application;

图4示出根据本申请一种实施例提供的晶体管的结构示意图;FIG. 4 shows a schematic structural diagram of a transistor provided according to an embodiment of the present application;

图5示出根据本申请一种实施例提供的移位寄存器单元的结构示意图;FIG. 5 shows a schematic structural diagram of a shift register unit provided according to an embodiment of the present application;

图6示出根据本申请一种实施例提供的虚拟移位寄存器单元的结构示意图;FIG. 6 shows a schematic structural diagram of a virtual shift register unit provided according to an embodiment of the present application;

图7示出根据本申请另一种实施例提供的虚拟移位寄存器单元的结构示意图;FIG. 7 shows a schematic structural diagram of a virtual shift register unit provided according to another embodiment of the present application;

图8示出根据本申请一种实施例提供的移位寄存器单元与虚拟移位寄存器单元的级联示意图;FIG. 8 shows a schematic diagram of cascading a shift register unit and a virtual shift register unit according to an embodiment of the present application;

图9示出根据本申请另一种实施例提供的移位寄存器单元与虚拟移位寄存器单元的级联示意图;FIG. 9 shows a schematic diagram of cascading a shift register unit and a virtual shift register unit according to another embodiment of the present application;

图10示出根据本申请一种实施例提供的显示面板的结构示意图;FIG. 10 shows a schematic structural diagram of a display panel provided according to an embodiment of the present application;

图11示出根据本申请另一种实施例提供的显示面板的结构示意图;Fig. 11 shows a schematic structural diagram of a display panel provided according to another embodiment of the present application;

图12示出根据本申请一种实施例提供的显示装置的结构示意图。Fig. 12 shows a schematic structural diagram of a display device provided according to an embodiment of the present application.

具体实施方式Detailed ways

下面将详细描述本申请的各个方面的特征和示例性实施例,为了使本申请的目的、技术方案及优点更加清楚明白,以下结合附图及具体实施例,对本申请进行进一步详细描述。应理解,此处所描述的具体实施例仅被配置为解释本申请,并不被配置为限定本申请。对于本领域技术人员来说,本申请可以在不需要这些具体细节中的一些细节的情况下实施。下面对实施例的描述仅仅是为了通过示出本申请的示例来提供对本申请更好的理解。The characteristics and exemplary embodiments of various aspects of the application will be described in detail below. In order to make the purpose, technical solution and advantages of the application clearer, the application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only configured to explain the application, not to limit the application. It will be apparent to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by showing examples of the present application.

需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is a relationship between these entities or operations. There is no such actual relationship or order between them. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes elements not expressly listed. other elements of or also include elements inherent in such a process, method, article, or device. Without further limitations, an element defined by the statement "comprising..." does not exclude the presence of additional same elements in the process, method, article or device comprising said element.

应当理解,在描述部件的结构时,当将一层、一个区域称为位于另一层、另一个区域“上面”或“上方”时,可以指直接位于另一层、另一个区域上面,或者在其与另一层、另一个区域之间还包含其它的层或区域。并且,如果将部件翻转,该一层、一个区域将位于另一层、另一个区域“下面”或“下方”。It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the part is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。下面将结合附图对实施例进行详细描述。It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The embodiments will be described in detail below in conjunction with the accompanying drawings.

本申请实施例提供一种阵列基板,本发明实施例的阵列基板可以各种形式呈现,以下将描述其中一些示例。An embodiment of the present application provides an array substrate. The array substrate in the embodiment of the present invention can be presented in various forms, some examples of which will be described below.

图1示出根据本申请一种实施例提供的阵列基板的结构示意图。如图1所示,阵列基板100包括显示区AA和围绕显示区AA的非显示区NA。显示区AA包括多条沿第一方向X延伸的栅极线10和多条沿第二方向Y延伸的数据线20。第二方向Y与第一方向X相交。例如,第二方向Y与第一方向X可以垂直,第一方向X可以是行方向,第二方向Y可以是列方向。Fig. 1 shows a schematic structural diagram of an array substrate provided according to an embodiment of the present application. As shown in FIG. 1 , the array substrate 100 includes a display area AA and a non-display area NA surrounding the display area AA. The display area AA includes a plurality of gate lines 10 extending along a first direction X and a plurality of data lines 20 extending along a second direction Y. The second direction Y intersects the first direction X. For example, the second direction Y may be perpendicular to the first direction X, the first direction X may be a row direction, and the second direction Y may be a column direction.

阵列基板100的形状可以不是矩形的。例如,阵列基板100可以包括至少一段异形边缘A1,异形边缘A1的延伸方向与第一方向X及第二方向Y均相交。示例性的,异形边缘A1可以为圆弧形边缘。阵列基板100中的虚拟移位寄存器单元41可以与异形边缘相邻设置。The shape of the array substrate 100 may not be rectangular. For example, the array substrate 100 may include at least one section of the special-shaped edge A1, and the extending direction of the special-shaped edge A1 intersects both the first direction X and the second direction Y. Exemplarily, the special-shaped edge A1 may be an arc-shaped edge. The dummy shift register unit 41 in the array substrate 100 may be arranged adjacent to the edge of the irregular shape.

非显示区NA包括移位寄存器组30以及与移位寄存器组30至少一端部级联的至少一级虚拟移位寄存器单元41。移位寄存器组30包括多个级联的移位寄存器单元31,各移位寄存器单元31的输出端与各自对应的栅极线10电连接。移位寄存器单元31的数量可以与栅极线10的条数相同,一个移位寄存器单元31对应电连接一条栅极线10。各移位寄存器单元31通过输出端向各自对应的栅极线10提供扫描信号。The non-display area NA includes a shift register group 30 and at least one stage of virtual shift register unit 41 cascaded with at least one end of the shift register group 30 . The shift register group 30 includes a plurality of cascaded shift register units 31 , and the output terminals of each shift register unit 31 are electrically connected to the respective corresponding gate lines 10 . The number of shift register units 31 may be the same as the number of gate lines 10 , and one shift register unit 31 is electrically connected to one gate line 10 . Each shift register unit 31 provides a scan signal to each corresponding gate line 10 through an output terminal.

本申请中,对于移位寄存器组30中的移位寄存器单元31的级联方式,以及虚拟移位寄存器单元41与移位寄存器单元31的级联方式不作限定。在图1和图2中,未示出移位寄存器组30中的移位寄存器单元31的级联关系以及虚拟移位寄存器单元41与移位寄存器单元31的级联关系,对此,在下文对图8和图9的描述中将提供一些具体示例。In this application, the cascading manner of the shift register units 31 in the shift register group 30 and the cascading manner of the virtual shift register units 41 and the shift register units 31 are not limited. In Fig. 1 and Fig. 2, the cascade relation of the shift register unit 31 in the shift register group 30 and the cascade relation of the virtual shift register unit 41 and the shift register unit 31 are not shown, for this, hereinafter Some specific examples will be provided in the description of FIGS. 8 and 9 .

示例性的,移位寄存器组包括M个级联的移位寄存器单元,M大于或等于2,在正向扫描时,第M级移位寄存器单元即为最后一级移位寄存器单元,在反向扫描时,第一级移位寄存器单元即为最后一级移位寄存器单元。若不向最后一级移位寄存器单元提供下拉(pull down)信号,会导致最后一级移位寄存器单元不稳定,例如,会导致最后一级移位寄存器单元重复的向其对应的栅极线输出扫描信号。Exemplarily, the shift register group includes M cascaded shift register units, and M is greater than or equal to 2. During forward scanning, the shift register unit of the Mth stage is the last stage of shift register unit. When scanning in the opposite direction, the shift register unit of the first stage is the shift register unit of the last stage. If the pull down signal is not provided to the last-stage shift register unit, it will cause the last-stage shift register unit to be unstable, for example, it will cause the last-stage shift register unit to repeatedly send to its corresponding gate line Output scan signal.

在一些实施例中,可以通过驱动芯片向最后一级移位寄存器单元提供下拉信号,但是这样会造成驱动芯片的输出端口增多。在另一些实施例中,可以设置与最后一级移位寄存器单元级联的虚拟移位寄存器单元,如此,能够在不增加驱动芯片的输出端口的情况下,通过虚拟移位寄存器单元向最后一级移位寄存器单元提供下拉信号,以保证最后一级移位寄存器单元的稳定性,防止最后一级移位寄存器单元重复的向其对应的栅极线输出扫描信号。In some embodiments, the pull-down signal can be provided to the shift register unit of the last stage through the driver chip, but this will increase the number of output ports of the driver chip. In some other embodiments, a virtual shift register unit cascaded with the last stage shift register unit can be set, so that, without increasing the output port of the driver chip, the The first-stage shift register unit provides a pull-down signal to ensure the stability of the last-stage shift register unit and prevent the last-stage shift register unit from repeatedly outputting scanning signals to its corresponding gate lines.

各虚拟移位寄存器单元41及各移位寄存器单元31均包括多个晶体管和多个电容,且各虚拟移位寄存器单元41及各移位寄存器单元31中的晶体管的数量、电容的数量,以及各元器件之间的电连接关系相同。即各虚拟移位寄存器单元41及各移位寄存器单元31的电路结构相同。Each virtual shift register unit 41 and each shift register unit 31 include a plurality of transistors and a plurality of capacitors, and the number of transistors in each virtual shift register unit 41 and each shift register unit 31, the number of capacitors, and The electrical connection relationship between the various components is the same. That is, the circuit structures of each virtual shift register unit 41 and each shift register unit 31 are the same.

虚拟移位寄存器单元41包括第一输出驱动晶体管,移位寄存器单元31包括与第一输出驱动晶体管连接关系相同的第二输出驱动晶体管,第一输出驱动晶体管的沟道宽长比小于第二输出驱动晶体管的沟道宽长比,即第一输出驱动晶体管所占据的版图面积小于第二输出驱动晶体管所占据的版图面积,从而使得虚拟移位寄存器单元具有更多透光区域,以使得虚拟移位寄存器单元的透光率大于移位寄存器单元的透光率。The virtual shift register unit 41 includes a first output drive transistor, the shift register unit 31 includes a second output drive transistor having the same connection relationship as the first output drive transistor, and the channel width-to-length ratio of the first output drive transistor is smaller than that of the second output drive transistor. The channel width-to-length ratio of the driving transistor, that is, the layout area occupied by the first output driving transistor is smaller than the layout area occupied by the second output driving transistor, so that the virtual shift register unit has more light-transmitting areas, so that the virtual shift register The light transmittance of the bit register unit is greater than the light transmittance of the shift register unit.

本申请实施例中,对于虚拟移位寄存器单元41及移位寄存器单元31中的晶体管数量以及电容数量不作具体限定,以及对于虚拟移位寄存器单元41及移位寄存器单元31中的各元器件之间的电连接关系也不作具体限定。In the embodiment of the present application, there is no specific limitation on the number of transistors and the number of capacitors in the virtual shift register unit 41 and the shift register unit 31, and the relationship between the components in the virtual shift register unit 41 and the shift register unit 31 The electrical connection relationship between them is not specifically limited.

示例性的,虚拟移位寄存器单元41的多个晶体管中,其中一个晶体管的第一极与时钟信号端电连接,第二极与虚拟移位寄存器单元41的输出端电连接,则该晶体管可以为虚拟移位寄存器单元41的第一输出驱动晶体管。同理,移位寄存器单元31中的多个晶体管中,其中一个晶体管的第一极与时钟信号端电连接,第二极与移位寄存器单元31的输出端电连接,则该晶体管可以为移位寄存器单元31的第二输出驱动晶体管。Exemplarily, among the multiple transistors of the virtual shift register unit 41, the first pole of one of the transistors is electrically connected to the clock signal terminal, and the second pole is electrically connected to the output terminal of the virtual shift register unit 41, then the transistor can be is the first output drive transistor of the dummy shift register cell 41 . Similarly, among the plurality of transistors in the shift register unit 31, if the first pole of one of the transistors is electrically connected to the clock signal terminal, and the second pole is electrically connected to the output terminal of the shift register unit 31, then the transistor can be a shift register unit 31. The second output of the bit register cell 31 drives a transistor.

为了清楚的说明本申请实施例的技术方案,本申请示例性的提供了一种移位寄存器单元的具体电路结构。图3示出了一种9T2C的移位寄存器单元的电路结构图。In order to clearly illustrate the technical solutions of the embodiments of the present application, the present application exemplarily provides a specific circuit structure of a shift register unit. FIG. 3 shows a circuit structure diagram of a 9T2C shift register unit.

图3所示的9T2C的移位寄存器电路包括9个晶体管(T)和2个电容元件(C)。9个晶体管分别为晶体管T0至晶体管T8,2个电容元件分别为电容元件C1和电容元件C2。各晶体管均包括栅极端、第一极和第二极。各电容均包括第一极板和第二极板。The 9T2C shift register circuit shown in Figure 3 includes 9 transistors (T) and 2 capacitive elements (C). The nine transistors are respectively transistor T0 to transistor T8, and the two capacitive elements are respectively capacitive element C1 and capacitive element C2. Each transistor includes a gate terminal, a first pole and a second pole. Each capacitor includes a first pole plate and a second pole plate.

晶体管T0的栅极端与初始化信号端SET电连接,晶体管T0的第一极与高电位信号端DIR1电连接,晶体管T0的第二极与节点P电连接。The gate terminal of the transistor T0 is electrically connected to the initialization signal terminal SET, the first pole of the transistor T0 is electrically connected to the high potential signal terminal DIR1, and the second pole of the transistor T0 is electrically connected to the node P.

晶体管T1的栅极端与栅极信号端Gn+1电连接,晶体管T1的第一极与节点P电连接,晶体管T1的第二极与低电位信号线DIR2电连接。The gate terminal of the transistor T1 is electrically connected to the gate signal terminal Gn+1, the first pole of the transistor T1 is electrically connected to the node P, and the second pole of the transistor T1 is electrically connected to the low potential signal line DIR2.

晶体管T2与时钟信号端CKB之间存在电容元件C1,其中,电容元件C1的第一极板与时钟信号端CKB电连接,电容元件C1的第二极板与晶体管T2栅极端电连接;晶体管T2的第一极与节点P电连接,晶体管T2的第二极与低电位信号端VGL电连接。There is a capacitive element C1 between the transistor T2 and the clock signal terminal CKB, wherein the first plate of the capacitive element C1 is electrically connected to the clock signal terminal CKB, and the second plate of the capacitive element C1 is electrically connected to the gate terminal of the transistor T2; the transistor T2 The first electrode of the transistor T2 is electrically connected to the node P, and the second electrode of the transistor T2 is electrically connected to the low potential signal terminal VGL.

晶体管T3的栅极端与节点P电连接,晶体管T3的第一极与时钟信号端CKB之间存在电容元件C1,其中,电容元件C1的第一极板与时钟信号端CKB电连接,电容元件C1的第二极板与晶体管T3的第一极电连接,晶体管T3的第二极与低电位信号线VGL电连接。The gate terminal of the transistor T3 is electrically connected to the node P, and there is a capacitive element C1 between the first electrode of the transistor T3 and the clock signal terminal CKB, wherein the first plate of the capacitive element C1 is electrically connected to the clock signal terminal CKB, and the capacitive element C1 The second plate of the transistor T3 is electrically connected to the first electrode of the transistor T3, and the second electrode of the transistor T3 is electrically connected to the low potential signal line VGL.

晶体管T4的栅极端与节点P电连接,晶体管T4的第一极与时钟信号端CKB电连接,晶体管T4的第二极连接栅极信号输出端GOUT;晶体管T4的栅极端与其第二极之间存在电容元件C2,其中,电容元件C2的第一极板与晶体管T4的栅极端电连接,电容元件C2的第二极板与晶体管T4的第二极电连接。The gate terminal of the transistor T4 is electrically connected to the node P, the first pole of the transistor T4 is electrically connected to the clock signal terminal CKB, and the second pole of the transistor T4 is connected to the gate signal output terminal GOUT; between the gate terminal of the transistor T4 and the second pole There is a capacitive element C2, wherein a first plate of the capacitive element C2 is electrically connected to the gate terminal of the transistor T4, and a second plate of the capacitive element C2 is electrically connected to the second electrode of the transistor T4.

晶体管T5的栅极端与晶体管T3的第一极电连接,晶体管T5的第一极与栅极信号输出端GOUT电连接,晶体管T5的第二极与低电位信号端VGL电连接。The gate terminal of the transistor T5 is electrically connected to the first terminal of the transistor T3, the first terminal of the transistor T5 is electrically connected to the gate signal output terminal GOUT, and the second terminal of the transistor T5 is electrically connected to the low potential signal terminal VGL.

晶体管T6的栅极端与时钟信号端CK电连接,晶体管T6的第一极与栅极信号输出端GOUT电连接,晶体管T6的第二极与低电位信号端VGL电连接。The gate terminal of the transistor T6 is electrically connected to the clock signal terminal CK, the first pole of the transistor T6 is electrically connected to the gate signal output terminal GOUT, and the second pole of the transistor T6 is electrically connected to the low potential signal terminal VGL.

晶体管T7的栅极端与复位信号端RESET电连接,晶体管T7的第一极与节点P电连接,晶体管T7的第二极与低电位信号端VGL电连接。The gate terminal of the transistor T7 is electrically connected to the reset signal terminal RESET, the first pole of the transistor T7 is electrically connected to the node P, and the second pole of the transistor T7 is electrically connected to the low potential signal terminal VGL.

晶体管T8的栅极端与复位信号端RESET电连接,晶体管T8的第一极与栅极信号输出端GOUT电连接,晶体管T8的第二极与低电位信号端VGL电连接。The gate terminal of the transistor T8 is electrically connected to the reset signal terminal RESET, the first pole of the transistor T8 is electrically connected to the gate signal output terminal GOUT, and the second pole of the transistor T8 is electrically connected to the low potential signal terminal VGL.

以虚拟移位寄存器单元41和移位寄存器单元31的电路结构均为图3所示的9T2C电路为例,其中,栅极信号输出端GOUT即为虚拟移位寄存器单元41和移位寄存器单元31的输出端。图3所示的晶体管T4的第一极与时钟信号端CKB电连接,晶体管T4的第二极与栅极信号输出端GOUT电连接,晶体管T4即为虚拟移位寄存器单元41的第一输出驱动晶体管以及移位寄存器单元31的第二输出驱动晶体管。Take the 9T2C circuit shown in FIG. 3 as an example in which both the virtual shift register unit 41 and the shift register unit 31 have circuit structures, wherein the gate signal output terminal GOUT is the virtual shift register unit 41 and the shift register unit 31 output terminal. The first pole of the transistor T4 shown in FIG. 3 is electrically connected to the clock signal terminal CKB, and the second pole of the transistor T4 is electrically connected to the gate signal output terminal GOUT. The transistor T4 is the first output driver of the virtual shift register unit 41. The transistor and the second output of the shift register unit 31 drive the transistor.

晶体管的沟道宽长比发生变化会影响移位寄存器单元的工作性能,而移位寄存器单元31要向显示区AA提供有效的驱动信号,因此,可以保持移位寄存器单元31中的第二输出驱动晶体管的沟道宽长比不变,仅改变虚拟移位寄存器单元41中的第一输出驱动晶体管的沟道宽长比,从而使第一输出驱动晶体管的沟道宽长比小于第二输出驱动晶体管的沟道宽长比。Changes in the channel width-to-length ratio of the transistor will affect the working performance of the shift register unit, and the shift register unit 31 will provide an effective driving signal to the display area AA, so the second output in the shift register unit 31 can be maintained The channel width-to-length ratio of the driving transistor is unchanged, and only the channel width-to-length ratio of the first output driving transistor in the virtual shift register unit 41 is changed, so that the channel width-to-length ratio of the first output driving transistor is smaller than that of the second output The channel width-to-length ratio of the drive transistor.

示例性的,如图4所示,晶体管包括栅极G、半导体部B、源极S和漏极D。其中,源极S和漏极D的间距为晶体管的沟道长度L,垂直于L方向的是晶体管的沟道宽度W。示例性的,栅极G可由金属形成。Exemplarily, as shown in FIG. 4 , the transistor includes a gate G, a semiconductor portion B, a source S and a drain D. As shown in FIG. Wherein, the distance between the source S and the drain D is the channel length L of the transistor, and the direction perpendicular to L is the channel width W of the transistor. Exemplarily, the gate G can be formed of metal.

需要说明的是,晶体管的具体结构有多种,图4所示的晶体管为“梳”形晶体管。示例性的,虚拟移位寄存器单元41和移位寄存器单元31中的各晶体管结构可以均为图4所示的“梳”形晶体管。虚拟移位寄存器单元41和移位寄存器单元31中的各晶体管也可以为其它结构的晶体管,本申请在此不再一一列举,本申请对于虚拟移位寄存器单元41和移位寄存器单元31中的各晶体管的具体结构不作限定。It should be noted that there are various specific structures of the transistor, and the transistor shown in FIG. 4 is a "comb" transistor. Exemplarily, each transistor structure in the virtual shift register unit 41 and the shift register unit 31 may be a “comb” transistor as shown in FIG. 4 . The transistors in the virtual shift register unit 41 and the shift register unit 31 can also be transistors of other structures, and the present application will not list them one by one here. For the virtual shift register unit 41 and the shift register unit 31, the present application The specific structure of each transistor is not limited.

以虚拟移位寄存器单元41和移位寄存器单元31的电路结构均为图3所示的9T2C电路,且虚拟移位寄存器单元41和移位寄存器单元31中的各晶体管均为图4所示的“梳”形晶体管为例,图5示出了一种移位寄存器单元的结构示意图,图6示出了一种虚拟移位寄存器单元的结构示意图。图5和图6中仅示意了各元件的分布结构,未示出各元件的连接关系。Be the 9T2C circuit shown in Fig. 3 with the circuit structure of virtual shift register unit 41 and shift register unit 31, and each transistor in virtual shift register unit 41 and shift register unit 31 is all shown in Fig. 4 A "comb" transistor is taken as an example. FIG. 5 shows a schematic structural diagram of a shift register unit, and FIG. 6 shows a schematic structural diagram of a virtual shift register unit. FIG. 5 and FIG. 6 only illustrate the distribution structure of each element, and do not show the connection relationship of each element.

移位寄存器单元31中晶体管T0至晶体管T8以及电容元件C1、C2的分布结构如图5所示,其中,晶体管T4为移位寄存器单元31的第二输出驱动晶体管311。本申请的申请人发现,晶体管的沟道宽长比会影响晶体管的驱动能力,通常晶体管的沟道宽长比越大,其驱动能力相应越强,不同功能的晶体管的驱动能力发生变化,对应移位寄存器单元的工作性能的影响是不同的。其中,输出驱动晶体管的驱动能力对移位寄存器单元的工作性能的影响相对较大。为了保证移位寄存器单元31的工作性能,如图5所示,可以将移位寄存器单元31中的第二输出驱动晶体管311(晶体管T4)的沟道宽长比设置的较大。The distribution structure of the transistors T0 to T8 and the capacitive elements C1 and C2 in the shift register unit 31 is shown in FIG. 5 , wherein the transistor T4 is the second output driving transistor 311 of the shift register unit 31 . The applicant of the present application found that the channel width-to-length ratio of a transistor will affect the drive capability of the transistor. Generally, the larger the channel width-to-length ratio of a transistor, the stronger its drive capability will be. The drive capability of transistors with different functions will change, corresponding to The impact on the operational performance of the shift register cells is different. Wherein, the driving capability of the output driving transistor has relatively great influence on the working performance of the shift register unit. In order to ensure the working performance of the shift register unit 31 , as shown in FIG. 5 , the channel width-to-length ratio of the second output driving transistor 311 (transistor T4 ) in the shift register unit 31 can be set relatively large.

示例性的,晶体管T0至晶体管T8的结构可以均为图4所示的“梳”形晶体管,晶体管T0至晶体管T8的沟道长度可以相同,晶体管T0至晶体管T8的沟道宽度可以不同。其中,晶体管T4的沟道宽度可以最大,即相对其它晶体管,晶体管T4占据的版图面积最大。Exemplarily, the structures of the transistors T0 to T8 may all be “comb” transistors as shown in FIG. 4 , the channel lengths of the transistors T0 to T8 may be the same, and the channel widths of the transistors T0 to T8 may be different. Wherein, the channel width of the transistor T4 may be the largest, that is, the layout area occupied by the transistor T4 is the largest compared to other transistors.

虚拟移位寄存器单元41中晶体管T0至晶体管T8以及电容元件C1、C2的分布结构如图6所示,其中,晶体管T4为虚拟移位寄存器单元41的第一输出驱动晶体管411。图6与图5的不同之处可以在于,图6中第一输出驱动晶体管411的沟道宽长比小于图5中第二输出驱动晶体管311的沟道宽长比,即图6中第一输出驱动晶体管411占据的版图面积小于图5中第二输出驱动晶体管311占据的版图面积。相比图5,图6所示的虚拟移位寄存器单元41具有更大的透光区,可以理解为,第一输出驱动晶体管411的沟道宽长比被减小前,第一输出驱动晶体管411的沟道宽长比与第二输出驱动晶体管311的沟道宽长比相同,第一输出驱动晶体管411的沟道宽长比被减小后,所减小的区域构成了虚拟移位寄存器单元41的透光区412,从而增大虚拟移位寄存器单元41的透光率,使得虚拟移位寄存器单元41的透光率大于移位寄存器单元31的透光率。The distribution structure of the transistors T0 to T8 and the capacitive elements C1 and C2 in the virtual shift register unit 41 is shown in FIG. 6 , wherein the transistor T4 is the first output driving transistor 411 of the virtual shift register unit 41 . The difference between FIG. 6 and FIG. 5 may be that the channel width-to-length ratio of the first output driving transistor 411 in FIG. 6 is smaller than the channel width-to-length ratio of the second output driving transistor 311 in FIG. The layout area occupied by the output driving transistor 411 is smaller than the layout area occupied by the second output driving transistor 311 in FIG. 5 . Compared with FIG. 5, the virtual shift register unit 41 shown in FIG. 6 has a larger light-transmitting area. It can be understood that, before the channel width-to-length ratio of the first output driving transistor 411 is reduced, the first output driving transistor 411 The channel width-to-length ratio of 411 is the same as the channel width-to-length ratio of the second output driving transistor 311, and after the channel width-to-length ratio of the first output driving transistor 411 is reduced, the reduced area constitutes a virtual shift register The light transmission area 412 of the unit 41 increases the light transmittance of the virtual shift register unit 41 so that the light transmittance of the virtual shift register unit 41 is greater than the light transmittance of the shift register unit 31 .

显示面板通常包括如本申请实施例所述的阵列基板100以及与阵列基板100相对设置的对置基板,并利用框胶将阵列基板和对置基板粘合。在框胶的固化过程中,需要利用紫外线(Ultraviolet,UV)固化框胶。通常,晶体管中的栅极由金属块形成,而紫外线无法穿过金属块。且虚拟移位寄存器单元41通常与阵列基板100的异形边缘A1相邻,若在不增加虚拟移位寄存器单元41的透光率情况下,直接将虚拟移位寄存器单元41设置在框胶下方,则不利于框胶固化;而异形边缘A1处的非显示区的空间比较紧张,若不增加虚拟移位寄存器单元41的透光率且不将虚拟移位寄存器单元41设置在框胶下方,则不利用实现窄边框。A display panel generally includes the array substrate 100 as described in the embodiment of the present application and an opposite substrate disposed opposite to the array substrate 100 , and the array substrate and the opposite substrate are bonded together by sealant. During the curing process of the frame glue, it is necessary to use ultraviolet light (Ultraviolet, UV) to cure the frame glue. Typically, the gate in a transistor is formed from a block of metal through which ultraviolet light cannot pass. And the dummy shift register unit 41 is usually adjacent to the special-shaped edge A1 of the array substrate 100, if the dummy shift register unit 41 is directly arranged under the sealant without increasing the light transmittance of the dummy shift register unit 41, It is not conducive to the curing of the frame glue; and the space of the non-display area at the special-shaped edge A1 is relatively tight, if the light transmittance of the virtual shift register unit 41 is not increased and the virtual shift register unit 41 is not arranged under the frame glue, then Narrow bezels are not exploited.

本申请实施例中,虚拟移位寄存器单元41中第一输出驱动晶体管411的沟道宽长比设置为小于移位寄存器单元31中第二输出驱动晶体管311的沟道宽长比,即虚拟移位寄存器单元41的透光区面积更大,从而使得虚拟移位寄存器单元41的透光率大于移位寄存器单元31的透光率。由于虚拟移位寄存器单元41的透光率比较大,可以将虚拟移位寄存器单元41直接置于框胶下方,在不影响框胶固化效果的同时,能够实现窄边框。In the embodiment of the present application, the channel width-to-length ratio of the first output driving transistor 411 in the virtual shift register unit 41 is set to be smaller than the channel width-to-length ratio of the second output driving transistor 311 in the shift register unit 31, that is, the virtual shift The light transmission area of the bit register unit 41 is larger, so that the light transmittance of the virtual shift register unit 41 is greater than the light transmittance of the shift register unit 31 . Since the light transmittance of the virtual shift register unit 41 is relatively large, the virtual shift register unit 41 can be placed directly under the sealant, so that a narrow frame can be realized without affecting the curing effect of the sealant.

在一些实施例中,图6中第一输出驱动晶体管411的沟道长度与图5中第二输出驱动晶体管311的沟道长度可以相同,图6中第一输出驱动晶体管411的沟道宽度小于图5中第二输出驱动晶体管311的沟道宽度。In some embodiments, the channel length of the first output driving transistor 411 in FIG. 6 and the channel length of the second output driving transistor 311 in FIG. 5 may be the same, and the channel width of the first output driving transistor 411 in FIG. 6 is smaller than The channel width of the second output driving transistor 311 in FIG. 5 .

在一些实施例中,请参考图1,阵列基板100还可以包括虚拟栅极线11,虚拟栅极线11位于阵列基板100的非显示区。虚拟栅极线11的数量可以和虚拟移位寄存器单元41的数量相同。一条虚拟栅极线11与一个虚拟移位寄存器单元41的输出端电连接。即虚拟移位寄存器单元41的输出端不仅与虚拟栅极线11电连接,还和与其级联的移位寄存器单元31的级联端电连接。其中,移位寄存器单元31的级联端可以理解为移位寄存器单元31中接收初始化信号及栅极信号的输入端。例如,移位寄存器单元31的电路结构如图3所示,移位寄存器单元31中晶体管T0的栅极与初始化信号端SET电连接,晶体管T1的栅极与栅极信号端Gn+1电连接,即移位寄存器单元31中晶体管T0、晶体管T1的栅极可以是移位寄存器单元31的级联端。同理,虚拟移位寄存器单元41中晶体管T0、晶体管T1的栅极可以是虚拟移位寄存器单元41的级联端。In some embodiments, please refer to FIG. 1 , the array substrate 100 may further include dummy gate lines 11 , and the dummy gate lines 11 are located in the non-display area of the array substrate 100 . The number of dummy gate lines 11 may be the same as the number of dummy shift register units 41 . One dummy gate line 11 is electrically connected to the output terminal of one dummy shift register unit 41 . That is, the output end of the dummy shift register unit 41 is not only electrically connected to the dummy gate line 11 , but also electrically connected to the cascaded end of the shift register unit 31 cascaded therewith. Wherein, the cascaded end of the shift register unit 31 can be understood as the input end of the shift register unit 31 that receives the initialization signal and the gate signal. For example, the circuit structure of the shift register unit 31 is shown in Figure 3, the gate of the transistor T0 in the shift register unit 31 is electrically connected to the initialization signal terminal SET, and the gate of the transistor T1 is electrically connected to the gate signal terminal Gn+1 , that is, the gates of the transistors T0 and T1 in the shift register unit 31 may be the cascaded terminals of the shift register unit 31 . Similarly, the gates of the transistors T0 and T1 in the virtual shift register unit 41 may be cascaded terminals of the virtual shift register unit 41 .

在另一些实施例中,请参考图2,图2与图1的不同之处在于阵列基板100未设置虚拟栅极线11,即虚拟移位寄存器单元41的输出端仅和与其级联的移位寄存器单元31的级联端电连接。通常,虚拟栅极线11的线宽为50um左右,若设置虚拟栅极线11,则需要占用非显示区NA大约50um的宽度,不利于实现窄边框。而本申请中,不再设置虚拟栅极线11,从而有利于窄边框的实现。In some other embodiments, please refer to FIG. 2 . The difference between FIG. 2 and FIG. 1 is that the array substrate 100 is not provided with a dummy gate line 11 , that is, the output terminal of the dummy shift register unit 41 is only connected to the shift register unit 41 cascaded with it. The cascaded ends of the bit register units 31 are electrically connected. Usually, the line width of the dummy gate line 11 is about 50 um. If the dummy gate line 11 is provided, it needs to occupy a width of about 50 um in the non-display area NA, which is not conducive to realizing a narrow border. However, in the present application, the dummy gate lines 11 are no longer provided, which is beneficial to the realization of narrow borders.

另外,本申请的发明人发现,在不设置虚拟栅极线11的情况下,虚拟移位寄存器单元41的输出端负载小于移位寄存器单元31的输出端负载。而负载大小会导致输出端的信号输出延迟不同,通常,负载越大,延迟越大,即虚拟移位寄存器单元41的输出端信号输出延迟小于移位寄存器单元31的输出端信号输出延迟,影响显示效果。本申请中,虚拟移位寄存器单元41中第一输出驱动晶体管的沟道宽长比小于移位寄存器单元31中第二输出驱动晶体管的沟道宽长比,即虚拟移位寄存器单元41驱动能力小于移位寄存器单元31的驱动能力,从而能够改善虚拟移位寄存器单元41的输出端信号输出延迟与移位寄存器单元31的输出端信号输出延迟不一致的问题,进而提高显示效果。In addition, the inventors of the present application found that the output load of the dummy shift register unit 41 is smaller than the output load of the shift register unit 31 when the dummy gate line 11 is not provided. The load size will cause the signal output delay of the output terminal to be different. Generally, the greater the load, the greater the delay, that is, the output signal output delay of the virtual shift register unit 41 is smaller than the output signal output delay of the shift register unit 31, which affects the display. Effect. In this application, the channel width-to-length ratio of the first output driving transistor in the virtual shift register unit 41 is smaller than the channel width-to-length ratio of the second output driving transistor in the shift register unit 31, that is, the driving capability of the virtual shift register unit 41 The driving capability of the shift register unit 31 is smaller than that of the shift register unit 31, so that the problem that the output signal output delay of the virtual shift register unit 41 is inconsistent with the output signal output delay of the shift register unit 31 can be improved, thereby improving the display effect.

在一些可选的实施例中,虚拟移位寄存器单元41的透光区412为连续性透光区。示例性的,如图6所述,虚拟移位寄存器单元41中第一输出驱动晶体管411可以靠近虚拟移位寄存器单元41的边缘设置。例如,第一输出驱动晶体管411靠近虚拟移位寄存器单元41上边缘设置,如此,第一输出驱动晶体管411下方的区域可以构成连续性的透光区412。连续性的透光区412更容易透过紫外光,从而更有利于提高对框胶的固化效果。In some optional embodiments, the light-transmitting region 412 of the virtual shift register unit 41 is a continuous light-transmitting region. Exemplarily, as shown in FIG. 6 , the first output driving transistor 411 in the virtual shift register unit 41 may be arranged close to the edge of the virtual shift register unit 41 . For example, the first output driving transistor 411 is arranged close to the upper edge of the virtual shift register unit 41 , so that the area under the first output driving transistor 411 can form a continuous light-transmitting region 412 . The continuous light-transmitting region 412 is more likely to transmit ultraviolet light, which is more conducive to improving the curing effect of the frame glue.

仍以虚拟移位寄存器单元41和移位寄存器单元31的电路结构均为图3所示的9T2C电路为例,其中,晶体管T4即为虚拟移位寄存器单元41的第一输出驱动晶体管以及移位寄存器单元31的第二输出驱动晶体管,电容元件C2与晶体管T4的栅极电连接,即电容元件C2即为虚拟移位寄存器单元41的第一电容413以及移位寄存器单元31的第二电容312。Still taking the circuit structure of virtual shift register unit 41 and shift register unit 31 as the 9T2C circuit shown in FIG. 3 as an example, wherein transistor T4 is the first output driving transistor of virtual shift register unit 41 and the shift The second output of the register unit 31 drives the transistor, and the capacitive element C2 is electrically connected to the gate of the transistor T4, that is, the capacitive element C2 is the first capacitor 413 of the virtual shift register unit 41 and the second capacitor 312 of the shift register unit 31 .

示例性的,阵列基板100可以包括时钟信号线CKB,第一输出驱动晶体管(晶体管T4)的第一极通过时钟信号线CKB与时钟信号端CKB电连接。时钟信号线CKB会通过第一输出驱动晶体管的栅极上的寄生电容对第一输出驱动晶体管的栅极电位造成耦合,导致第一输出驱动晶体管的漏电流增大,使得第一输出驱动晶体管驱动能力不稳定。本申请的发明人发现,增大虚拟移位寄存器单元41中与第一输出驱动晶体管的栅极电连接的电容元件的容值,即将虚拟移位寄存器单元41的第一电容413的容值设置为大于移位寄存器单元31的第二电容312的容值,能够减小上述耦合造成的影响。Exemplarily, the array substrate 100 may include a clock signal line CKB, and the first electrode of the first output driving transistor (transistor T4 ) is electrically connected to the clock signal terminal CKB through the clock signal line CKB. The clock signal line CKB will cause coupling to the gate potential of the first output driving transistor through the parasitic capacitance on the gate of the first output driving transistor, causing the leakage current of the first output driving transistor to increase, so that the first output driving transistor drives Ability is unstable. The inventors of the present application have found that increasing the capacitance of the capacitive element electrically connected to the gate of the first output drive transistor in the virtual shift register unit 41 is to set the capacitance of the first capacitor 413 of the virtual shift register unit 41 To be larger than the capacitance of the second capacitor 312 of the shift register unit 31, the influence caused by the above coupling can be reduced.

示例性的,将第一输出驱动晶体管411的沟道宽长比记为第一数值,第二输出驱动晶体管311的沟道宽长比记为第二数值。本申请的发明人通过大量实验数据发现,第一数值与第二数值的比值小于或等于0.2时,能够更好的使虚拟移位寄存器单元41的透光率大于移位寄存器单元31的透光率,从而在将虚拟移位寄存器单元41直接置于框胶下方,能够更好的保证对框胶的固化效果。Exemplarily, the channel width-to-length ratio of the first output driving transistor 411 is recorded as a first value, and the channel width-to-length ratio of the second output driving transistor 311 is recorded as a second value. The inventors of the present application found through a large amount of experimental data that when the ratio of the first value to the second value is less than or equal to 0.2, the light transmittance of the virtual shift register unit 41 can be better than the light transmittance of the shift register unit 31 rate, so that when the virtual shift register unit 41 is placed directly under the sealant, the curing effect on the sealant can be better ensured.

另外,如图2所示,在虚拟移位寄存器单元41的输出端仅和与其级联的移位寄存器单元31的级联端电连接的情况下,本申请的发明人通过大量实验数据发现,将第一数值与第二数值的比值设置为小于或等于0.2,能够更好的改善虚拟移位寄存器单元41的输出端信号输出延迟与移位寄存器单元31的输出端信号输出延迟不一致的问题。In addition, as shown in FIG. 2, in the case where the output end of the virtual shift register unit 41 is only electrically connected to the cascaded end of the shift register unit 31 cascaded with it, the inventor of the present application found through a large amount of experimental data that Setting the ratio of the first value to the second value to be less than or equal to 0.2 can better improve the problem that the output signal output delay of the virtual shift register unit 41 is inconsistent with the output signal output delay of the shift register unit 31 .

示例性的,可以保持第二输出驱动晶体管311的沟道宽长不变,减小第一输出驱动晶体管411的沟道宽长比。例如,可以减小第一输出驱动晶体管411的沟道宽度。即可以将第一输出驱动晶体管411的沟道宽度与第二输出驱动晶体管311的沟道宽度的比值设置为小于或等于0.2。Exemplarily, the channel width and length of the second output driving transistor 311 can be kept unchanged, and the channel width and length ratio of the first output driving transistor 411 can be reduced. For example, the channel width of the first output driving transistor 411 may be reduced. That is, the ratio of the channel width of the first output driving transistor 411 to the channel width of the second output driving transistor 311 may be set to be less than or equal to 0.2.

本申请的发明人通过大量实验数据还发现,第一电容413的容值与第二电容312的容值的比值大于或等于2时,能够更好的减小上述耦合造成的影响。The inventors of the present application also found through a large amount of experimental data that when the ratio of the capacitance of the first capacitor 413 to the capacitance of the second capacitor 312 is greater than or equal to 2, the above-mentioned influence caused by the coupling can be better reduced.

电容的容值与电容的极板面积成正比,且电容的容值与极板之间的距离成反比。示例性的,第一电容413及第二电容312均包括相对的两个极板。例如,可以通过增大第一电容413的极板面积的方式,增大第一电容413的容值。又例如,可以通过减小第一电容413的两个极板之间的距离的方式,增大第一电容413的容值。而通过增大第一电容413的极板面积的方式,在工艺上比较容易实现。The capacitance of the capacitor is proportional to the area of the plates of the capacitor, and the capacitance of the capacitor is inversely proportional to the distance between the plates. Exemplarily, both the first capacitor 413 and the second capacitor 312 include two opposite plates. For example, the capacity of the first capacitor 413 can be increased by increasing the plate area of the first capacitor 413 . For another example, the capacitance of the first capacitor 413 can be increased by reducing the distance between two plates of the first capacitor 413 . However, by increasing the area of the plates of the first capacitor 413 , it is relatively easy to realize in terms of technology.

图7示出根据本申请另一种实施例提供的虚拟移位寄存器单元的结构示意图。图7与图5的不同之处可以在于,图7中第一输出驱动晶体管411的沟道宽长比小于图5中第二输出驱动晶体管311的沟道宽长比,即图6中第一输出驱动晶体管411占据的版图面积小于图5中第二输出驱动晶体管311占据的版图面积;图7中第一电容413的极板面积大于图5中第二电容312的极板面积,即图7中第一电容413的极板占据的版图面积大于图5中第二电容312的极板占据的版图面积。示例性的,如图7中第一输出驱动晶体管411和第一电容413一起占据的版图面积可以大致等于图5中第二输出驱动晶体管311和第二电容312一起占据的版图面积,如此,可不必增大虚拟移位寄存器单元41占用的总体版图面积。Fig. 7 shows a schematic structural diagram of a virtual shift register unit provided according to another embodiment of the present application. The difference between FIG. 7 and FIG. 5 may be that the channel width-to-length ratio of the first output driving transistor 411 in FIG. 7 is smaller than the channel width-to-length ratio of the second output driving transistor 311 in FIG. The layout area occupied by the output drive transistor 411 is smaller than the layout area occupied by the second output drive transistor 311 in FIG. 5; the plate area of the first capacitor 413 in FIG. 7 is larger than the plate area of the second capacitor 312 in FIG. The layout area occupied by the plates of the first capacitor 413 is larger than the layout area occupied by the plates of the second capacitor 312 in FIG. 5 . Exemplarily, the layout area occupied by the first output driving transistor 411 and the first capacitor 413 in FIG. 7 may be approximately equal to the layout area occupied by the second output driving transistor 311 and the second capacitor 312 in FIG. It is not necessary to increase the overall layout area occupied by the virtual shift register unit 41 .

请继续参考图7,第一电容413的两个极板的至少部分区域可以均为镂空结构。第一电容413的两个极板的镂空区域4130在阵列基板上的正投影交叠,且镂空区域4130为条形区域,镂空区域4130构成阵列基板100的透光区412。将第一电容413的两个极板设置为镂空结构,在增大第一电容413容值的同时,又可以透过紫外光,且条形的镂空区域4130更容易透过紫外光,从而更有利于提高对框胶的固化效果。Please continue to refer to FIG. 7 , at least partial areas of the two plates of the first capacitor 413 may be hollow structures. The orthographic projections of the hollowed-out areas 4130 of the two plates of the first capacitor 413 on the array substrate overlap, and the hollowed-out areas 4130 are strip-shaped areas, and the hollowed-out areas 4130 constitute the light-transmitting area 412 of the array substrate 100 . The two pole plates of the first capacitor 413 are set as a hollow structure, which can transmit ultraviolet light while increasing the capacitance of the first capacitor 413, and the strip-shaped hollow area 4130 is more likely to transmit ultraviolet light, thereby making it easier to It is beneficial to improve the curing effect of the frame glue.

示例性的,第一电容413的两个极板可以为非透明导电结构。第一电容413的极板为镂空结构,可以理解成第一电容413的各极板由多个导电块连接构成。在一些实施例中,如图7所示,第一电容413的各极板包括三个导电块4132,各导电块4132的宽度d可以小于或等于40μm。镂空区域4130可以位于相邻两个导电块4132之间。Exemplarily, the two plates of the first capacitor 413 may be non-transparent conductive structures. The plates of the first capacitor 413 are hollow structures, which can be understood as each plate of the first capacitor 413 is formed by connecting multiple conductive blocks. In some embodiments, as shown in FIG. 7 , each plate of the first capacitor 413 includes three conductive blocks 4132 , and the width d of each conductive block 4132 may be less than or equal to 40 μm. The hollow area 4130 may be located between two adjacent conductive blocks 4132 .

在一些可选的实施例中,如图1或图2所示,非显示区NA可以包括框胶区NA1,框胶区NA1围绕显示区AA设置。可以在框胶区NA1内涂覆框胶,以将阵列基板100和对置基板粘合。虚拟移位寄存器单元41中至少第一电容413位于框胶区NA1。如图7所示,第一电容413为镂空结构,将第一电容413设置于框胶区NA1,在不影响对框胶的固化效果的同时,能够实现窄边框。In some optional embodiments, as shown in FIG. 1 or FIG. 2 , the non-display area NA may include a sealant area NA1 , and the sealant area NA1 is arranged around the display area AA. Sealant may be coated in the sealant area NA1 to bond the array substrate 100 and the opposite substrate. At least the first capacitor 413 in the virtual shift register unit 41 is located in the sealant area NA1. As shown in FIG. 7 , the first capacitor 413 is a hollow structure, and the first capacitor 413 is arranged in the sealant area NA1 , which can achieve a narrow frame without affecting the curing effect of the sealant.

需要说明的是,为了清楚的示意本申请实施例的技术方案,图1和图2中,框胶区NA1没有设置填充图案,仅以线框示意。It should be noted that, in order to clearly illustrate the technical solution of the embodiment of the present application, in FIG. 1 and FIG. 2 , the sealant area NA1 is not provided with a filling pattern, but is only shown in a wireframe.

在一些可选的实施例中,如图8所示,移位寄存器组30可以包括N级移位寄存器单元31,N为大于或等于4的正整数。第一级移位寄存器单元至第N级移位寄存器单元中所有奇数级移位寄存器单元中相邻两级移位寄存器单元之间相互级联,例如第一级移位寄存器单元与第三级移位寄存器单元级联,第三级移位寄存器单级联与第五级移位寄存器单元级联;以及所有偶数级移位寄存器单元中相邻两级移位寄存器单元之间相互级联,例如,第二级移位寄存器单元与第四级移位寄存器单元级联,第四级移位寄存器单级联与第六级移位寄存器单元级联。In some optional embodiments, as shown in FIG. 8 , the shift register group 30 may include N stages of shift register units 31 , where N is a positive integer greater than or equal to 4. In all the odd-numbered shift register units from the first stage shift register unit to the Nth stage shift register unit, adjacent two stages of shift register units are cascaded with each other, for example, the first stage shift register unit and the third stage The shift register units are cascaded, the third-stage shift registers are single-cascaded and the fifth-stage shift register units are cascaded; and all even-numbered-stage shift register units are cascaded between adjacent two-stage shift register units, For example, the shift register units of the second stage are cascaded with the shift register units of the fourth stage, and the shift register units of the fourth stage are cascaded with the shift register units of the sixth stage.

阵列基板100可以包括至少两个虚拟移位寄存器单元41。例如,阵列基板100包括两个虚拟移位寄存器单元41,分别为第一虚拟移位寄存器单元和第二虚拟级移位寄存器单元。第一虚拟级移位寄存器单元与第N-1级移位寄存器单元之间级联,第二虚拟级移位寄存器单元与第N级移位寄存器单元之间级联。The array substrate 100 may include at least two dummy shift register units 41 . For example, the array substrate 100 includes two dummy shift register units 41, which are respectively a first dummy shift register unit and a second dummy stage shift register unit. The first virtual stage shift register unit is cascaded with the N-1th stage shift register unit, and the second virtual stage shift register unit is cascaded with the Nth stage shift register unit.

第一虚拟级移位寄存器单元与第N-1级移位寄存器单元之间级联指的是第一虚拟级移位寄存器单元的输出端OUT与第N-1级移位寄存器单元的级联端连接,第N-1级移位寄存器单元的输出端OUT与第一虚拟级移位寄存器单元的级联端连接。第二虚拟级移位寄存器单元与第N级移位寄存器单元之间级联指的是第二虚拟级移位寄存器单元的输出端OUT与第N级移位寄存器单元的级联端连接,第N级移位寄存器单元的输出端OUT与第二虚拟级移位寄存器单元的级联端连接。The cascading between the first virtual stage shift register unit and the N-1th stage shift register unit refers to the cascade connection between the output terminal OUT of the first virtual stage shift register unit and the N-1th stage shift register unit The output terminal OUT of the N-1th stage shift register unit is connected to the cascade terminal of the first virtual stage shift register unit. The cascading between the second virtual stage shift register unit and the Nth stage shift register unit means that the output terminal OUT of the second virtual stage shift register unit is connected to the cascaded end of the Nth stage shift register unit, and the first stage The output terminal OUT of the N-stage shift register unit is connected to the cascaded end of the second dummy-stage shift register unit.

仍以虚拟移位寄存器单元41和移位寄存器单元31的电路结构均为图3所示的9T2C电路为例,移位寄存器单元31中晶体管T0的栅极可以理解为移位寄存器单元31的初始化信号输入端Set,晶体管T1的栅极可以理解为移位寄存器单元31的栅极信号输入端Gn+1;同理,虚拟移位寄存器单元41中晶体管T0的栅极可以理解为虚拟移位寄存器单元41的初始化信号输入端Set,晶体管T1的栅极可以理解为虚拟移位寄存器单元41的栅极信号输入端Gn+1。如图8所示,具体的,第一虚拟级移位寄存器单元的输出端OUT可以与第N-1级移位寄存器单元的栅极信号输入端Gn+1连接,第N-1级移位寄存器单元的输出端OUT与第一虚拟级移位寄存器单元的初始化信号输入端Set连接;第二虚拟级移位寄存器单元的输出端OUT与第N级移位寄存器单元的栅极信号输入端Gn+1连接,第N级移位寄存器单元的输出端OUT与第二虚拟级移位寄存器单元的初始化信号输入端Set连接。Still taking the circuit structure of virtual shift register unit 41 and shift register unit 31 as the 9T2C circuit shown in FIG. 3 as an example, the gate of transistor T0 in shift register unit 31 can be understood as the initialization of shift register unit 31 The signal input terminal Set, the gate of the transistor T1 can be understood as the gate signal input terminal Gn+1 of the shift register unit 31; similarly, the gate of the transistor T0 in the virtual shift register unit 41 can be understood as a virtual shift register The initialization signal input terminal Set of the unit 41 and the gate of the transistor T1 can be understood as the gate signal input terminal Gn+1 of the virtual shift register unit 41 . As shown in Figure 8, specifically, the output terminal OUT of the shift register unit of the first virtual stage can be connected to the gate signal input terminal Gn+1 of the shift register unit of the N-1 stage, and the shift register unit of the N-1 stage The output terminal OUT of the register unit is connected to the initialization signal input terminal Set of the first virtual stage shift register unit; the output terminal OUT of the second virtual stage shift register unit is connected to the gate signal input terminal Gn of the Nth stage shift register unit +1 connection, the output terminal OUT of the shift register unit of the Nth stage is connected to the initialization signal input terminal Set of the shift register unit of the second dummy stage.

在正向扫描时,第N-1级移位寄存器单元向第一虚拟级移位寄存器单元提供初始化信号,第N级移位寄存器单元向第二虚拟级移位寄存器单元提供初始化信号;在反向扫描时,第一虚拟级移位寄存器单元向第N-1级移位寄存器单元提供栅极信号,第二虚拟级移位寄存器单元向第N级移位寄存器单元提供栅极信号。When scanning in the forward direction, the shift register unit of the N-1 stage provides an initialization signal to the shift register unit of the first virtual stage, and the shift register unit of the Nth stage provides an initialization signal to the shift register unit of the second virtual stage; When scanning, the shift register unit of the first virtual stage provides a gate signal to the shift register unit of the N-1th stage, and the shift register unit of the second virtual stage provides a gate signal to the shift register unit of the Nth stage.

在另一些可选的实施例中,如图9所示,阵列基板100包括四个虚拟移位寄存器单元41,分别为第一虚拟移位寄存器单元、第二虚拟级移位寄存器单元、第三虚拟移位寄存器单元和第四虚拟级移位寄存器单元。图9与图8的不同之处在于,第三虚拟级移位寄存器单元与第一级移位寄存器单元之间级联,第四虚拟级移位寄存器单元与第二级移位寄存器单元之间级联。In other optional embodiments, as shown in FIG. 9 , the array substrate 100 includes four virtual shift register units 41, which are respectively the first virtual shift register unit, the second virtual stage shift register unit, the third A dummy shift register unit and a fourth dummy stage shift register unit. The difference between Fig. 9 and Fig. 8 is that the shift register unit of the third virtual stage is cascaded with the shift register unit of the first stage, and the shift register unit of the fourth virtual stage is connected with the shift register unit of the second stage. cascade.

仍以虚拟移位寄存器单元41和移位寄存器单元31的电路结构均为图3所示的9T2C电路为例,第三虚拟级移位寄存器单元与第一级移位寄存器单元之间级联具体可以是第三虚拟级移位寄存器单元的输出端OUT与第一级移位寄存器单元的初始化信号输入端Set连接,第一级移位寄存器单元的输出端OUT与第三虚拟级移位寄存器单元栅极信号输入端Gn+1连接。第四虚拟级移位寄存器单元与第二级移位寄存器单元之间级联具体可以是,第四虚拟级移位寄存器单元的输出端OUT与第二级移位寄存器单元的初始化信号输入端Set连接,第二级移位寄存器单元的输出端OUT与第四虚拟级移位寄存器单元栅极信号输入端Gn+1连接。Still taking the circuit structure of the virtual shift register unit 41 and the shift register unit 31 as the 9T2C circuit shown in Figure 3 as an example, the cascading between the third virtual stage shift register unit and the first stage shift register unit is specific It may be that the output terminal OUT of the third virtual stage shift register unit is connected to the initialization signal input terminal Set of the first stage shift register unit, and the output terminal OUT of the first stage shift register unit is connected to the third virtual stage shift register unit The gate signal input terminal Gn+1 is connected. The cascade connection between the shift register unit of the fourth virtual stage and the shift register unit of the second stage may specifically be that the output terminal OUT of the shift register unit of the fourth virtual stage is connected with the initialization signal input terminal Set of the shift register unit of the second stage The output terminal OUT of the shift register unit of the second stage is connected to the gate signal input terminal Gn+1 of the shift register unit of the fourth virtual stage.

在正向扫描时,第三虚拟级移位寄存器单元向第一级移位寄存器单元提供初始化信号,第四虚拟级移位寄存器单元向第二级移位寄存器单元提供初始化信号;在反向扫描时,第一级移位寄存器单元向第三虚拟级移位寄存器单元提供栅极信号,第二级移位寄存器单元向第四虚拟级移位寄存器单元提供栅极信号。During forward scanning, the third virtual stage shift register unit provides an initialization signal to the first stage shift register unit, and the fourth virtual stage shift register unit provides an initialization signal to the second stage shift register unit; , the shift register unit of the first stage provides a gate signal to the shift register unit of the third virtual stage, and the shift register unit of the second stage provides a gate signal to the shift register unit of the fourth virtual stage.

可选的,如图8和图9所示,阵列基板还可以包括时钟信号线CK1/CK2/CKB1/CKB2以及复位信号线RESET。通过时钟信号线CK1/CK2/CKB1/CKB2以及复位信号线RESET将虚拟移位寄存器单元和移位寄存器单元中的元件与对应的信号端连接。Optionally, as shown in FIGS. 8 and 9 , the array substrate may further include clock signal lines CK1 / CK2 / CKB1 / CKB2 and a reset signal line RESET. The virtual shift register unit and elements in the shift register unit are connected to corresponding signal terminals through clock signal lines CK1/CK2/CKB1/CKB2 and reset signal line RESET.

本申请还提供一种显示面板。图10示出根据本申请一种实施例提供的显示面板的结构示意图。如图10所示,本申请实施例提供的显示面板1000可以包括阵列基板100、对置基板200以及设置在阵列基板100和对置基板200之间的液晶层300。其中,阵列基板100为上述任一实施例所述的阵列基板。对置基板200可以为彩膜基板。The present application also provides a display panel. Fig. 10 shows a schematic structural diagram of a display panel provided according to an embodiment of the present application. As shown in FIG. 10 , the display panel 1000 provided by the embodiment of the present application may include an array substrate 100 , an opposite substrate 200 and a liquid crystal layer 300 disposed between the array substrate 100 and the opposite substrate 200 . Wherein, the array substrate 100 is the array substrate described in any one of the above-mentioned embodiments. The opposite substrate 200 may be a color filter substrate.

图11示出根据本申请另一种实施例提供的显示面板的结构示意图。如图11所示,本申请实施例提供的显示面板1000可以包括阵列基板100和对置基板200。其中,阵列基板100为上述任一实施例所述的阵列基板。对置基板200可以为保护盖板,例如玻璃盖板。图11所示的显示面板可以为有机发光二极管(Organic Light-Emitting Diode,OLED)显示面板。Fig. 11 shows a schematic structural diagram of a display panel provided according to another embodiment of the present application. As shown in FIG. 11 , the display panel 1000 provided by the embodiment of the present application may include an array substrate 100 and a counter substrate 200 . Wherein, the array substrate 100 is the array substrate described in any one of the above-mentioned embodiments. The opposing substrate 200 may be a protective cover, such as a glass cover. The display panel shown in FIG. 11 may be an organic light-emitting diode (Organic Light-Emitting Diode, OLED) display panel.

本领域内技术人员应该理解,在本申请的其他实现方式中,显示面板还可以微型发光二极管(Micro LED)显示面板,量子点显示面板等。Those skilled in the art should understand that in other implementations of the present application, the display panel can also be a micro light-emitting diode (Micro LED) display panel, a quantum dot display panel, and the like.

本申请实施例提供的显示面板,具有本申请实施例提供的阵列基板的有益效果,具体可以参考上述各实施例对于阵列基板的具体说明,本实施例在此不再赘述。The display panel provided in the embodiment of the present application has the beneficial effects of the array substrate provided in the embodiment of the present application. For details, reference may be made to the specific descriptions of the array substrate in the above embodiments, and details will not be repeated here in this embodiment.

本申请还提供了一种显示装置,包括本申请提供的显示面板。请参考图12,图12是本申请实施例提供的一种显示装置的结构示意图。图12提供的显示装置2000包括本申请上述任一实施例提供的显示面板1000。图12实施例仅以手机为例,对显示装置2000进行说明,可以理解的是,本申请实施例提供的显示装置,可以是电脑、电视、车载显示装置等其他具有显示功能的显示装置,本申请对此不作具体限制。本申请实施例提供的显示装置,具有本申请实施例提供的显示面板的有益效果,具体可以参考上述各实施例对于显示面板的具体说明,本实施例在此不再赘述。The present application also provides a display device, including the display panel provided in the present application. Please refer to FIG. 12 , which is a schematic structural diagram of a display device provided by an embodiment of the present application. The display device 2000 provided in FIG. 12 includes the display panel 1000 provided in any one of the above-mentioned embodiments of the present application. The embodiment in FIG. 12 only takes a mobile phone as an example to illustrate the display device 2000. It can be understood that the display device provided in the embodiment of the present application may be a computer, a television, a vehicle-mounted display device, and other display devices with display functions. The application is not specifically limited to this. The display device provided by the embodiment of the present application has the beneficial effects of the display panel provided by the embodiment of the present application. For details, reference may be made to the specific descriptions of the display panel in the above embodiments, and details will not be repeated in this embodiment.

依照本申请如上文所述的实施例,这些实施例并没有详尽叙述所有的细节,也不限制该申请仅为所述的具体实施例。显然,根据以上描述,可作很多的修改和变化。本说明书选取并具体描述这些实施例,是为了更好地解释本申请的原理和实际应用,从而使所属技术领域技术人员能很好地利用本申请以及在本申请基础上的修改使用。本申请仅受权利要求书及其全部范围和等效物的限制。In accordance with the embodiments of the present application as described above, these embodiments do not describe all details in detail, nor do they limit the application to only the specific embodiments described. Obviously many modifications and variations are possible in light of the above description. This description selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present application, so that those skilled in the art can make good use of the present application and its modifications based on the present application. This application is to be limited only by the claims, along with their full scope and equivalents.

Claims (11)

1. An array substrate, comprising:
a display area and a non-display area surrounding the display area;
the display area comprises a plurality of gate lines;
the non-display area comprises a shift register group and at least one stage of virtual shift register unit cascaded with at least one end part of the shift register group, the shift register group comprises a plurality of cascaded shift register units, and the output end of each shift register unit is electrically connected with a corresponding gate line;
each virtual shift register unit and each shift register unit respectively comprise a plurality of transistors and a plurality of capacitors, and the number of the transistors, the number of the capacitors and the electrical connection relationship among the components in each virtual shift register unit and each shift register unit are the same;
the virtual shift register unit comprises a first output driving transistor, the shift register unit comprises a second output driving transistor which is connected with the first output driving transistor in the same relation, and the channel width-length ratio of the first output driving transistor is smaller than that of the second output driving transistor, so that the light transmittance of the virtual shift register unit is larger than that of the shift register unit;
the array substrate comprises at least one section of non-parallel edge, and the virtual shift register unit is adjacent to the non-parallel edge.
2. The array substrate of claim 1, wherein the dummy shift register cells comprise light transmissive regions, the light transmissive regions being continuous light transmissive regions.
3. The array substrate of claim 2, wherein the dummy shift register unit further comprises a first capacitor electrically connected to the gate of the first output driving transistor, the shift register unit comprises a second capacitor connected to the first capacitor in the same relationship, and the capacitance of the first capacitor is greater than the capacitance of the second capacitor.
4. The array substrate of any one of claims 1 to 3, wherein the channel width and length of the first output driving transistor is a first value, the channel width and length ratio of the second output driving transistor is a second value, and the ratio of the first value to the second value is less than or equal to 0.2.
5. The array substrate of claim 3, wherein a ratio of a capacitance of the first capacitor to a capacitance of the second capacitor is greater than or equal to 2.
6. The array substrate of claim 3, wherein the first capacitor and the second capacitor each comprise two opposite plates, and the plate area of the first capacitor is larger than the plate area of the second capacitor.
7. The array substrate of claim 6, wherein at least some regions of the two plates of the first capacitor are both hollow structures, orthogonal projections of the hollow regions of the two plates of the first capacitor on the array substrate overlap, the hollow regions are bar-shaped regions, and the hollow regions constitute the light-transmitting regions.
8. The array substrate of claim 7, wherein the non-display area comprises a frame glue area, the frame glue area is disposed around the display area, and at least the first capacitor in the dummy shift register unit is located in the frame glue area.
9. The array substrate of claim 1, wherein the array substrate comprises at least a first dummy shift register unit and a second dummy shift register unit;
the first virtual shift register unit and the N-1 stage shift register unit are cascaded, the second virtual shift register unit and the N stage shift register unit are cascaded, adjacent two stages of shift register units in all odd-numbered stage shift register units from the first stage shift register unit to the N stage shift register unit are cascaded mutually, and adjacent two stages of shift register units in all even-numbered stage shift register units are cascaded mutually; n is a positive integer greater than or equal to 4.
10. A display panel comprising the array substrate according to any one of claims 1 to 9.
11. A display device characterized by comprising the display panel according to claim 10.
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