CN111540816B - LED epitaxial structure, LED chip and preparation method of epitaxial structure - Google Patents
LED epitaxial structure, LED chip and preparation method of epitaxial structureInfo
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- CN111540816B CN111540816B CN202010190471.9A CN202010190471A CN111540816B CN 111540816 B CN111540816 B CN 111540816B CN 202010190471 A CN202010190471 A CN 202010190471A CN 111540816 B CN111540816 B CN 111540816B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
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Abstract
本发明提供了一种衬底可剥离式LED外延结构、LED芯片及衬底可剥离式LED外延结构的制备方法，衬底可剥离式LED外延结构包括GaAs衬底、GaAs缓冲层、AlAs牺牲层和半导体层，GaAs缓冲层设置于GaAs衬底上，AlAs牺牲层设置于GaAs缓冲层上；AlAs牺牲层上设置有多个凹陷部，半导体层设置于AlAs牺牲层上。与现有技术相比，本技术方案的有益效果是：本发明通过在AlAs牺牲层上设置有凹陷部，多个凹陷部在外延结构的横截面上形成波浪线状的切面边缘，使得半导体层的下表面之间通过凹凸不平的接触面贴合在一起，借助凹凸不平的接触面来提高腐蚀效果和降低AlAs牺牲层和半导体层之间的应力，进而实现GaAs衬底的轻松剥离，从而降低生产成本。
The present invention provides a substrate-peelable LED epitaxial structure, an LED chip, and a method for preparing the substrate-peelable LED epitaxial structure. The substrate-peelable LED epitaxial structure comprises a GaAs substrate, a GaAs buffer layer, an AlAs sacrificial layer, and a semiconductor layer. The GaAs buffer layer is arranged on the GaAs substrate, and the AlAs sacrificial layer is arranged on the GaAs buffer layer; a plurality of recessed portions are arranged on the AlAs sacrificial layer, and the semiconductor layer is arranged on the AlAs sacrificial layer. Compared with the prior art, the beneficial effect of the technical solution is as follows: the present invention provides recessed portions on the AlAs sacrificial layer, and the plurality of recessed portions form wavy-line cut edges on the cross section of the epitaxial structure, so that the lower surfaces of the semiconductor layers are bonded together through the uneven contact surface, and the uneven contact surface is used to improve the corrosion effect and reduce the stress between the AlAs sacrificial layer and the semiconductor layer, thereby realizing easy peeling of the GaAs substrate, thereby reducing the production cost.
Description
Technical Field
The invention relates to the technical field of light-emitting diode preparation, relates to an LED epitaxial structure with an easily-stripped substrate, further relates to an LED chip provided with the epitaxial structure, and simultaneously relates to a preparation method corresponding to the LED epitaxial structure with the easily-stripped substrate.
Background
The LED, namely a light-emitting diode, can efficiently convert electric energy into light energy by emitting light through energy recombination of electrons and holes, and has the advantages of small volume, rich colors, low energy consumption, long service life and the like. Based on the above advantages, LED light sources are considered as new solid-state light sources for the next generation into the general lighting field, and have been attracting attention in the industry.
In a red LED or an infrared LED using a GaAs substrate, the epitaxial structure mainly comprises an N-type GaAs buffer layer, an N-type DBR reflecting layer, an N-type limiting layer, an MQW light-emitting layer, a P-type limiting layer and a P-type GaP current expansion layer on the GaAs substrate, and the red LED or the infrared LED can be manufactured by sequentially growing each layer on the GaAs substrate. However, such a structural substrate is not peelable, and the substrate can be used only once so that the cost is high. The conventional AlAs sacrificial layer technology at present has the problem that the GaAs substrate is difficult to strip, and the epitaxial layer is easy to tear and tear in the process of stripping the GaAs substrate, so that the GaAs substrate in the prior art can be used only once, the cost is too high, and the development of the LED industry is restricted.
Disclosure of Invention
The invention aims at solving the technical problems of the prior art, and provides a substrate-peelable LED epitaxial structure, an LED chip and a preparation method of the substrate-peelable LED epitaxial structure, which can realize easy peeling of a GaAs substrate, thereby reducing production cost.
The technical scheme adopted for solving the technical problems is as follows:
a substrate strippable LED epitaxial structure comprising:
A GaAs substrate;
the GaAs buffer layer is arranged on the GaAs substrate;
the AlAs sacrificial layer is arranged on the GaAs buffer layer, and a plurality of concave parts are arranged on the AlAs sacrificial layer;
And the semiconductor layer is arranged on the AlAs sacrificial layer.
Compared with the prior art, the GaAs substrate stripping device has the beneficial effects that the concave parts are arranged on the AlAs sacrificial layer, the plurality of concave parts form wavy linear section edges on the cross section of the epitaxial structure, so that the lower surfaces of the semiconductor layers are attached together through the rugged contact surface, the corrosion effect is improved and the stress between the AlAs sacrificial layer and the semiconductor layers is reduced by means of the rugged contact surface, and further the GaAs substrate is easily stripped, so that the production cost is reduced.
Further, the concave part is a conical concave part.
The beneficial effect of adopting the scheme is that the plurality of conical concave parts are arranged on the AlAs sacrificial layer, the plurality of conical concave parts form the saw-tooth-like tangent plane edge on the cross section of the epitaxial structure, the semiconductor layer is combined with the AlAs sacrificial layer through the saw-tooth-like edge, and when the substrate needs to be stripped, the saw-tooth-like tangent plane edge can improve the corrosion effect on the AlAs sacrificial layer on one hand, and can reduce the stress suffered by the AlAs sacrificial layer on the other hand, so that the GaAs substrate can be easily stripped, and the production cost of the epitaxial structure is reduced.
Further, the semiconductor layer comprises a low-temperature P-type GaP layer, a high-temperature P-type GaP layer, a P-type AlInP limiting layer, an MQW multiple quantum well light-emitting layer, an N-type AlInP limiting layer and an N-type GaAs contact layer from bottom to top in sequence;
The lower surface of the low-temperature P-type GaP layer is provided with a plurality of conical protruding parts, and the conical protruding parts are respectively embedded into the conical recessed parts.
The low-temperature P-type GaP layer has the beneficial effects that the conical protruding part corresponding to the conical concave part is arranged on the lower surface of the low-temperature P-type GaP layer, and the low-temperature P-type GaP layer is arranged on the AlAs sacrificial layer through mutual occlusion of the conical protruding part and the conical concave part, so that the contact area between the low-temperature P-type GaP layer and the AlAs sacrificial layer can be increased, and further the effects of improving the corrosion effect and reducing the stress are achieved.
Further, the thickness of the GaAs buffer layer is 100-1000nm, and the thickness of the low-temperature P-type GaP layer is 100-1000nm.
The beneficial effect of the scheme is that the thickness of the GaAs buffer layer is set to be 100-1000nm, so that a better buffer effect can be achieved at lower cost, and the thickness of the low-temperature P-type GaP layer is set to be 100-1000nm, so that the low-temperature P-type GaP layer can be separated from the AlAs sacrificial layer more easily.
Further, the diameter of the bottom surface of the conical concave part is 5-40nm, and the height of the conical concave part is 5-40nm.
The technical scheme has the beneficial effects that the diameter and the height of the bottom surface of the conical concave part are set to be 5-40nm, so that the forming is convenient, the etching solution can enter the epitaxial structure more efficiently, a better etching effect is obtained, and the low-temperature P-type GaP layer can be separated from the AlAs sacrificial layer more easily.
Further, the thickness of the AlAs sacrificial layer is greater than the height of the tapered recess.
The beneficial effect of adopting the scheme is that the saw-tooth section edge which is mutually meshed can be formed between the low-temperature P-type GaP layer and the AlAs sacrificial layer.
Further, the thickness of the AlAs sacrificial layer is 10-50nm.
The beneficial effect of the scheme is that the preparation cost can be reduced on the premise of ensuring that the saw-tooth section edges which are mutually meshed can be formed between the low-temperature P-type GaP layer and the AlAs sacrificial layer.
Further, the bottom surface of the conical concave part is positioned on the upper surface of the AlAs sacrificial layer, and the conical concave part is a conical concave with a large upper part and a small lower part formed on the AlAs sacrificial layer.
The beneficial effects of the scheme are that the molding is easy.
Further, the bottom surfaces of two adjacent conical concave parts are tangent.
The beneficial effect of adopting the scheme is that the contact area between the low-temperature P-type GaP layer and the AlAs sacrificial layer is increased, so that the corrosion effect of the AlAs sacrificial layer is improved to the maximum extent and the stress born by the AlAs sacrificial layer is reduced.
The technical scheme adopted for solving the technical problems is as follows:
An LED chip having the substrate-peelable LED epitaxial structure as described above disposed therein.
Compared with the LED chip in the prior art, the epitaxial structure adopted by the LED chip has the beneficial effects that the plurality of concave parts are formed on the AlAs sacrificial layer, the plurality of concave parts form the wavy line-like tangent plane edges on the cross section of the epitaxial structure, the semiconductor layer is combined with the AlAs sacrificial layer through the wavy line edges, and when the substrate needs to be stripped, the wavy line-like tangent plane edges can improve the corrosion effect on the AlAs sacrificial layer on one hand, and can reduce the stress born by the AlAs sacrificial layer on the other hand, so that the GaAs substrate can be easily stripped, and the production cost of the LED chip is reduced.
A method for preparing a substrate-peelable LED epitaxial structure, the substrate-peelable LED epitaxial structure being the substrate-peelable LED epitaxial structure as described above, the method comprising the steps of:
growing a GaAs buffer layer on the GaAs substrate;
growing an AlAs sacrificial layer on the GaAs buffer layer;
etching a plurality of concave parts on the AlAs sacrificial layer;
And growing a semiconductor layer on the AlAs sacrificial layer.
Compared with the prior art, the method has the beneficial effects that the plurality of conical concave parts are formed on the AlAs sacrificial layer in the etching mode, the plurality of conical concave parts form the wavy line-like tangent plane edges on the cross section of the epitaxial structure, the semiconductor layer is combined with the AlAs sacrificial layer through the wavy line-like edges, and when the substrate needs to be stripped, the wavy line-like tangent plane edges can improve the corrosion effect on the AlAs sacrificial layer on one hand, and can reduce the stress on the AlAs sacrificial layer on the other hand, so that the GaAs substrate can be easily stripped, and the production cost of the epitaxial structure is reduced.
Drawings
Fig. 1 is a schematic view of a part of a substrate-peelable LED epitaxial structure according to the present invention before etching a tapered recess.
Fig. 2 is a schematic diagram of a portion of a substrate-peelable LED epitaxial structure according to the present invention after etching a tapered recess.
Fig. 3 is a schematic diagram of the overall structure of a substrate-peelable LED epitaxial structure according to the present invention after etching the tapered recess.
Fig. 4 is a schematic diagram of a more specific overall structure of a substrate-releasable LED epitaxial structure of the present invention after etching the tapered recess.
Fig. 5 is a schematic diagram of the overall structure of the substrate-peeled LED epitaxial structure according to the present invention.
In the drawings, the list of components represented by the respective reference numerals is as follows:
The light-emitting diode comprises a GaAs substrate 1, a GaAs buffer layer 2, an AlAs sacrificial layer 3, a low-temperature P-type GaP layer 4, a high-temperature P-type GaP layer 5, a P-type AlInP limiting layer 6, an MQW multiple quantum well light-emitting layer 7, an N-type AlInP limiting layer 8 and an N-type GaAs contact layer 9;
A tapered recess 301;
Conical boss 401.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clear and clear, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or component to be referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected via an intermediate medium, or in communication between two components. When an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. It will be understood by those of ordinary skill in the art that the terms described above are in the specific sense of the present invention.
In the prior art, red LEDs or infrared LEDs are manufactured by sequentially growing layers on a GaAs substrate. In theory, after the AlAs sacrificial layer is added, the GaAs substrate can be recycled, and the GaAs substrate can be separated only by corroding the sacrificial layer through the corrosive solution, so that the GaAs substrate is stripped and recycled. However, the epitaxial structure in the prior art has the problem that the GaAs substrate is difficult to peel, the etching solution can only dip into the sacrificial layer at the edge part, and the etching solution is difficult to play a role on the sacrificial layer far away from the edge, so that the phenomenon that the epitaxial layer is torn and torn easily occurs in the process of peeling the GaAs substrate. Therefore, the red light LED epitaxial wafer in the prior art is still mainly in a non-peeling mode of the substrate, the GaAs substrate can be used only once, the cost is too high, and the development of the LED industry is restricted.
In order to solve the problems, the invention provides a substrate-peelable LED epitaxial structure, an LED chip and a preparation method of the substrate-peelable LED epitaxial structure, and aims to enable etching solution to fully infiltrate into a sacrificial layer by changing the LED epitaxial structure so as to achieve the aim of easily separating a GaAs substrate.
As shown in fig. 1,2 and 3, a substrate-peelable LED epitaxial structure includes a GaAs substrate 1, a GaAs buffer layer 2, an AlAs sacrificial layer 3, and a semiconductor layer 101, where the GaAs buffer layer 2 is disposed on the GaAs substrate 1, the AlAs sacrificial layer 3 is disposed on the GaAs buffer layer 2, and the semiconductor layer 101 is disposed on the AlAs sacrificial layer 3. The GaAs buffer layer 2, alAs sacrificial layer 3, and semiconductor layer 101 can be obtained by sequential epitaxial growth on the GaAs substrate 1.
Before the substrate needs to be stripped, the AlAs sacrificial layer needs to be corroded by the corrosion solution, generally, in the prior art, the sacrificial layer is of a flat layer structure, namely, the sacrificial layer is of a flat layer structure, which causes that the corrosion solution is difficult to penetrate into the inner center of the substrate, the corrosion effect is poor, and further, the semiconductor layer is difficult to strip from the AlAs sacrificial layer.
As shown in fig. 2 and 3, in order to enhance the corrosion effect, the present invention creatively provides a plurality of recesses on the AlAs sacrificial layer 3, and correspondingly, the shape of the lower surface of the semiconductor layer 101 corresponds to the plurality of recesses, so that the lower surface of the semiconductor layer 101 and the upper surface of the AlAs sacrificial layer 3 are mutually engaged to form a complete structure.
According to the invention, the concave parts are arranged on the AlAs sacrificial layer, so that the lower surfaces of the semiconductor layers are attached together through the rugged contact surface, the corrosion effect is improved and the stress between the AlAs sacrificial layer and the semiconductor layers is reduced by means of the rugged contact surface, and the GaAs substrate can be easily stripped, so that the production cost is reduced.
Specifically, the concave portion may be a spherical concave portion, a square concave portion, or an irregular concave portion. In the process of implementing the technical scheme of the invention, due to cost consideration, the AlAs sacrificial layer can be randomly corroded with concave parts in various shapes, and the substrate stripping operation can be realized more simply and efficiently as long as the concave parts are arranged on the AlAs sacrificial layer compared with the prior art.
Preferably, the recess is provided as a conical recess 301. Through being provided with the toper depressed part, can form the contact edge of cockscomb structure between semiconductor layer and the AlAs sacrificial layer, this cockscomb structure contact edge is regular pattern, can guarantee that corrosive liquid evenly distributed to make the corrosion degree of the contact surface between semiconductor layer and the AlAs sacrificial layer keep unanimous, avoid the in-process that peels off needs big time little power when applying.
A plurality of conical concave parts are formed on the AlAs sacrificial layer in an etching mode, a plurality of conical concave parts form saw-tooth-like tangent plane edges on the cross section of the epitaxial structure, the semiconductor layer is combined with the AlAs sacrificial layer through the saw-tooth-like edges, when the substrate needs to be stripped, the saw-tooth-like tangent plane edges can improve the corrosion effect on the AlAs sacrificial layer on one hand, and the stress borne by the AlAs sacrificial layer can be reduced on the other hand, so that the GaAs substrate can be stripped easily, and the production cost of the epitaxial structure is reduced.
As shown in fig. 4, the semiconductor layer 101 includes, in order from bottom to top, a low-temperature P-type GaP layer 4, a high-temperature P-type GaP layer 5, a P-type AlInP confining layer 6, an MQW multiple quantum well light-emitting layer 7, an N-type AlInP confining layer 8, and an N-type GaAs contact layer 9, so as to form a complete LED epitaxial structure. In order to improve the corrosion effect, the invention creatively provides a plurality of conical concave parts 301 on the AlAs sacrificial layer 3, and correspondingly, the lower surface of the low-temperature P-type GaP layer 4 is provided with a plurality of conical convex parts 401, and the plurality of conical convex parts 401 are respectively embedded into the plurality of conical concave parts 301. Specifically, the bottom surface of the conical recess 301 is located on the upper surface of the AlAs sacrificial layer 3, and the conical recess 301 is a conical recess with a large top and a small bottom formed on the AlAs sacrificial layer 3.
By providing the plurality of tapered concave portions 301 on the upper surface of the AlAs sacrificial layer 3, and providing the tapered convex portions 401 corresponding to the tapered concave portions 301 on the lower surface of the low-temperature P-type GaP layer 4, the low-temperature P-type GaP layer 4 is provided on the AlAs sacrificial layer 3 by the mutual engagement of the tapered convex portions 401 and the tapered concave portions 301, the plurality of tapered concave portions 301 form saw-tooth-like section edges on the cross section of the epitaxial structure, and when the substrate needs to be peeled, the saw-tooth-like section edges can improve the corrosion effect on the AlAs sacrificial layer 3, and can reduce the stress to which the AlAs sacrificial layer 3 is subjected, so that the GaAs substrate 1 can be easily peeled, thereby reducing the production cost of the epitaxial structure. The stripped LED epitaxial structure is shown in fig. 5.
In summary, the present invention provides an LED epitaxial structure, which has a GaAs buffer layer 2, alAs sacrificial layer 3, low temperature P-type GaP layer 4, high temperature P-type GaP layer 5, P-type AlInP confining layer 6, MQW multiple quantum well light-emitting layer 7, N-type AlInP confining layer 8, and N-type GaAs contact layer 9 grown in this order on GaAs substrate 1. The implementation process of the structure comprises the steps of firstly placing a GaAs substrate 1 in a MOCVD reaction chamber to grow a GaAs buffer layer 2, regrowing an AlAs sacrificial layer 3, then taking out the GaAs substrate 1, the GaAs buffer layer 2 and the AlAs sacrificial layer 3 integrally, etching a plurality of conical concave parts 301 on the AlAs sacrificial layer 3, after etching, placing the substrate in the MOCVD reaction chamber again to grow a low-temperature P-type GaP layer 4, a high-temperature P-type GaP layer 5, a P-type AlInP limiting layer 6, an MQW multiple quantum well luminescent layer 7, an N-type AlInP limiting layer 8 and an N-type GaAs contact layer 9 in sequence, and obtaining the complete LED epitaxial structure. When the epitaxial layer grown in the mode is etched, the saw-tooth-shaped edge formed at the joint of the AlAs sacrificial layer 3 and the low-temperature P-type GaP layer 4 on the AlAs sacrificial layer 3 enables etching solution to more easily penetrate into the center inside the substrate, a better etching effect is achieved, meanwhile, stress born between the AlAs sacrificial layer 3 and the low-temperature P-type GaP layer 4 is reduced, the AlAs sacrificial layer 3 and the low-temperature P-type GaP layer 4 are more easily separated during stripping, and the substrate can be repeatedly used for multiple times, so that the purpose of reducing cost is achieved.
Preferably, the thickness of the GaAs buffer layer 2 is 100-1000nm, and the thickness of the low temperature P-type GaP layer 4 is 100-1000nm. If the GaAs buffer layer 2 is set to be too thick, a good buffer effect can be achieved, but the cost increases, and if the GaAs buffer layer 2 is set to be 100 to 1000nm, a good buffer effect can be achieved at a low cost. And the thickness of the low temperature P-type GaP layer 4 is set to 100-1000nm, so that the low temperature P-type GaP layer 4 can be more easily separated from the AlAs sacrificial layer 3.
More preferably, the thickness of the GaAs buffer layer 2 is 300nm. The GaAs buffer layer 2 functions to buffer structurally and therefore cannot be set too thin, however, this does not mean that the thicker the GaAs buffer layer 2 is, which on the one hand affects the overall structure of the epitaxial layer and on the other hand increases the cost. A large amount of experimental data show that when the thickness of the GaAs buffer layer 2 is set to 300nm, a quite ideal buffer effect can be obtained, and if the thickness is further increased on the basis, the buffer effect is more remarkable, but the cost is greatly increased. Therefore, considering the buffer effect and the manufacturing cost in combination, in the present invention, the thickness of the GaAs buffer layer 2 is set to 300nm.
Preferably, the diameter of the bottom surface of the conical concave part 301 is 5-40nm, and the height of the conical concave part 301 is 5-40nm. The thickness of the AlAs sacrificial layer 3 is greater than the height of the tapered recess 301, and specifically, the thickness of the AlAs sacrificial layer 3 is 10-50nm.
The diameter and the height of the bottom surface of the conical concave part 301 are set to be 5-40nm, so that the forming is convenient, the etching solution can enter the epitaxial structure more efficiently, a better etching effect is achieved, and the low-temperature P-type GaP layer 4 can be separated from the AlAs sacrificial layer 3 more easily. The thickness of the AlAs sacrificial layer 3 is larger than that of the conical concave portion 301, so that the saw-tooth-shaped section edges which are meshed with each other can be formed between the low-temperature P-type GaP layer 4 and the AlAs sacrificial layer 3. Correspondingly, the thickness of the AlAs sacrificial layer 3 is set to be 10-50nm, and the preparation cost can be reduced on the premise that the saw-tooth-shaped section edges which are mutually meshed can be formed between the low-temperature P-type GaP layer 4 and the AlAs sacrificial layer 3. More preferably, the thickness of the AlAs sacrificial layer is 20nm, and correspondingly, the height of the conical concave part is 10nm.
Preferably, on the AlAs sacrificial layer 3, the bottom surfaces of two adjacent conical depressions 301 are tangent, so that the contact area between the low-temperature P-type GaP layer 4 and the AlAs sacrificial layer 3 can be increased, thereby maximally improving the corrosion effect of the AlAs sacrificial layer 3 and reducing the stress to which the AlAs sacrificial layer 3 is subjected.
The invention also provides an LED chip, wherein the LED chip is internally provided with the substrate-strippable LED epitaxial structure. Compared with the LED chip in the prior art, the epitaxial structure adopted by the LED chip is provided with the plurality of concave parts on the AlAs sacrificial layer 3, the plurality of concave parts form wavy linear section edges on the cross section of the epitaxial structure, when the substrate needs to be stripped, the wavy linear section edges can improve the corrosion effect on the AlAs sacrificial layer 3 on one hand, and can reduce the stress suffered by the AlAs sacrificial layer 3 on the other hand, so that the GaAs substrate 1 can be stripped easily, and the production cost of the LED chip is reduced. Specifically, the recess is a tapered recess.
As shown in fig. 1, 2 and 3, the invention further provides a preparation method of the substrate-peelable LED epitaxial structure, which specifically comprises the following steps:
The GaAs substrate 1 is put into an MOCVD reactor, and a GaAs buffer layer 2 is grown on the GaAs substrate 1. Specifically, the thickness of the GaAs substrate 1 is 100 to 1000um, and for example, the thickness of the GaAs substrate 1 may be set to 150, 200, 250, 850, 900, 950um.
An AlAs sacrificial layer 3 is grown on the GaAs buffer layer 2. Specifically, the thickness of the AlAs sacrificial layer 3 is 10-50nm, and for example, the thickness of the AlAs sacrificial layer 3 may be set to 10nm, 20nm, 30nm, 40nm and 50nm.
The entirety of the GaAs substrate 1, gaAs buffer layer 2, and AlAs sacrificial layer 3 is taken out, and a plurality of recesses are etched in the AlAs sacrificial layer 3. Preferably, the recess is a conical recess 301. The diameter of the bottom surface of the conical concave part 301 is 5-40nm, and the height of the conical concave part 301 is 5-40nm. The semiconductor layer 101 is grown on the AlAs sacrificial layer 3.
Specifically, the semiconductor layer 101 includes, in order from bottom to top, a low-temperature P-type GaP layer, a high-temperature P-type GaP layer, a P-type AlInP confinement layer, an MQW multiple quantum well light-emitting layer, an N-type AlInP confinement layer, and an N-type GaAs contact layer.
As shown in fig. 4, the growth of the semiconductor layer 101 includes the step of putting the etched GaAs substrate 1, gaAs buffer layer 2, and AlAs sacrificial layer 3 in the MOCVD reactor again, and growing a low temperature P-type GaP layer 4 on the AlAs sacrificial layer 3. Specifically, the thickness of the low temperature P-type GaP layer 4 is 100 to 1000nm, for example, the thickness of the low temperature P-type GaP layer 4 may be set to 150nm, 200nm, 250nm, 850, 900, 950nm. The temperature of the MOCVD reactor is set to 500-700 c when the low temperature P-type GaP layer 4 is grown, for example, 500, 550, 600, 650, 700 c when the low temperature P-type GaP layer 4 is grown.
A high temperature P-type GaP layer 5 is grown on the low temperature P-type GaP layer 4. Specifically, the temperature of the MOCVD reactor is set to 700-850 degrees celsius when the high temperature P-type GaP layer 5 is grown, for example, 700, 750, 800, 850 degrees celsius when the high temperature P-type GaP layer 5 is grown.
A P-type AlInP confining layer 6 is grown on the high temperature P-type GaP layer 5.
An MQW multiple quantum well light emitting layer 7 is grown on the P-type AlInP confinement layer 6.
An N-type AlInP confining layer 8 is grown on the MQW multiple quantum well light-emitting layer 7.
An N-type GaAs contact layer 9 is grown on the N-type AlInP confining layer 8. To this end, a substrate-peelable LED epitaxial structure as shown in fig. 4 is obtained.
In the MOCVD reaction chamber, a GaAs buffer layer 2 is grown on a GaAs substrate 1, an AlAs sacrificial layer 3 is grown again, then the substrate is taken out, a plurality of conical concave parts 301 are etched on the AlAs layer of the substrate, and then the substrate is put into the MOCVD reaction chamber to grow the structures of a low-temperature P-type GaP layer 4, a high-temperature P-type GaP layer 5, a P-type AlInP limiting layer 6, an MQW multiple quantum well luminous layer 7, an N-type AlInP limiting layer 8, an N-type GaAs contact layer 9 and the like. As shown in fig. 5, in the LED epitaxial structure obtained by the above scheme, a serrated edge is formed at the joint of the AlAs sacrificial layer 3 and the low-temperature P-type GaP layer 4, so that the AlAs sacrificial layer 3 can be effectively corroded by the corrosion solution, and the GaAs substrate 1 and the GaAs buffer layer 2 are peeled off, thereby realizing recycling of the substrate and further achieving the purpose of reducing cost.
In summary, the invention provides a substrate-peelable LED epitaxial structure, an LED chip and a method for manufacturing the substrate-peelable LED epitaxial structure, wherein the core of the technical scheme is that a plurality of conical concave parts 301 are arranged on the upper surface of an AlAs sacrificial layer 3, conical convex parts 401 corresponding to the conical concave parts 301 are arranged on the lower surface of a low-temperature P-type GaP layer 4, and the low-temperature P-type GaP layer 4 is arranged on the AlAs sacrificial layer 3 through mutual engagement of the conical convex parts 401 and the conical concave parts 301. The tapered concave portions 301 form saw-tooth-like section edges on the cross section of the epitaxial structure, when the substrate needs to be peeled, the saw-tooth-like section edges can improve the corrosion effect on the AlAs sacrificial layer 3 on one hand, and can reduce the stress suffered by the AlAs sacrificial layer 3 on the other hand, so that the GaAs substrate 1 can be easily peeled off, and the production cost of the epitaxial structure is reduced.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
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| CN104025319A (en) * | 2011-12-14 | 2014-09-03 | 首尔伟傲世有限公司 | Semiconductor device and method of fabricating the same |
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