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CN111316439A - 非挥发性存储器的制造方法 - Google Patents

非挥发性存储器的制造方法 Download PDF

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Publication number
CN111316439A
CN111316439A CN201780096452.6A CN201780096452A CN111316439A CN 111316439 A CN111316439 A CN 111316439A CN 201780096452 A CN201780096452 A CN 201780096452A CN 111316439 A CN111316439 A CN 111316439A
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CN
China
Prior art keywords
memory
logic
manufacturing
forming
transistor
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Granted
Application number
CN201780096452.6A
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English (en)
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CN111316439B (zh
Inventor
宁丹
王腾锋
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Chengdu Analog Circuit Technology Inc
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Chengdu Analog Circuit Technology Inc
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Publication of CN111316439A publication Critical patent/CN111316439A/zh
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Publication of CN111316439B publication Critical patent/CN111316439B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10P50/264—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)

Abstract

一种非挥发性存储器的制造方法，包括步骤：在基底（50）上形成栅氧化层（60）；将逻辑栅极多晶硅（10,10'）通过至少两次沉积过程后，形成存储单元的叠层电容；通过蚀刻工艺移除多余的逻辑栅极多晶硅（10,10'），形成存储晶体管和外围逻辑晶体管。本发明所述方法，通过至少两次沉积形成存储晶体管的叠层电容，于标准逻辑工艺中制造出存储器，使得存储器的制造工艺更简单，与逻辑工艺兼容性好，成本低。

Description

PCT国内申请，说明书已公开。

Claims (18)

  1. PCT国内申请，权利要求书已公开。
CN201780096452.6A 2017-11-02 2017-11-02 非挥发性存储器的制造方法 Active CN111316439B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/109171 WO2019084883A1 (zh) 2017-11-02 2017-11-02 非挥发性存储器的制造方法

Publications (2)

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CN111316439A true CN111316439A (zh) 2020-06-19
CN111316439B CN111316439B (zh) 2022-10-25

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US (1) US11296194B2 (zh)
CN (1) CN111316439B (zh)
TW (1) TWI689083B (zh)
WO (1) WO2019084883A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116454088A (zh) * 2023-06-12 2023-07-18 成都锐成芯微科技股份有限公司 系统级芯片及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101127329A (zh) * 2006-08-17 2008-02-20 海力士半导体有限公司 快闪存储器件及其制造方法
CN101685820A (zh) * 2008-09-23 2010-03-31 力晶半导体股份有限公司 存储器元件及其制造方法、半导体元件
US20150084110A1 (en) * 2013-09-24 2015-03-26 Semiconductor Manufacturing International (Beijing) Corporation Flash memory and fabrication method thereof
CN106356374A (zh) * 2015-07-13 2017-01-25 中芯国际集成电路制造(上海)有限公司 快闪存储器及其制作方法
CN106653758A (zh) * 2015-10-28 2017-05-10 中芯国际集成电路制造(上海)有限公司 快闪存储器的制作方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647482B1 (ko) * 2004-09-16 2006-11-23 삼성전자주식회사 반도체 장치 및 그 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101127329A (zh) * 2006-08-17 2008-02-20 海力士半导体有限公司 快闪存储器件及其制造方法
CN101685820A (zh) * 2008-09-23 2010-03-31 力晶半导体股份有限公司 存储器元件及其制造方法、半导体元件
US20150084110A1 (en) * 2013-09-24 2015-03-26 Semiconductor Manufacturing International (Beijing) Corporation Flash memory and fabrication method thereof
CN106356374A (zh) * 2015-07-13 2017-01-25 中芯国际集成电路制造(上海)有限公司 快闪存储器及其制作方法
CN106653758A (zh) * 2015-10-28 2017-05-10 中芯国际集成电路制造(上海)有限公司 快闪存储器的制作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116454088A (zh) * 2023-06-12 2023-07-18 成都锐成芯微科技股份有限公司 系统级芯片及其制备方法
CN116454088B (zh) * 2023-06-12 2023-09-15 成都锐成芯微科技股份有限公司 系统级芯片及其制备方法

Also Published As

Publication number Publication date
TW201933582A (zh) 2019-08-16
WO2019084883A1 (zh) 2019-05-09
US20200243653A1 (en) 2020-07-30
US11296194B2 (en) 2022-04-05
CN111316439B (zh) 2022-10-25
TWI689083B (zh) 2020-03-21

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