CN111289803A - Method and device for testing dielectric constant and related equipment - Google Patents

Abstract

The present application provides a test method for dielectric constant, a test device, and related equipment. The testing method includes providing a workpiece to be measured, including a base body and a to-be-measured part, the to-be-measured part is provided on one side of the base body, and the to-be-measured part includes a first to-be-measured layer and a second to-be-measured layer. Obtain the first optical thickness and the first equivalent oxide thickness of the first layer to be measured. Obtain the second optical thickness and the second equivalent oxide thickness of the part to be measured. Obtain the first dielectric constant of the first layer to be measured. Establish a dielectric constant model of the second to-be-measured layer according to the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the first dielectric constant, and calculate the second to-be-measured layer the second dielectric constant of the layer. The interference of uncontrollable factors can be avoided by adding the first layer to be measured, and the second dielectric layer of the second layer to be measured can be accurately calculated through the cooperation of the first layer to be measured, the second layer to be measured and the second layer to be measured constant.

Description

Test method of dielectric constant, test device and related equipment

technical field

The present application belongs to the technical field of workpiece measurement, and specifically relates to a dielectric constant test method, a test device, and related equipment.

Background technique

Currently, an aluminum oxide layer is usually deposited on the surface of a silicon substrate to measure the dielectric constant of the aluminum oxide layer. However, in the process of depositing the aluminum oxide layer on the surface of the silicon substrate, an uncontrollable silicon oxide layer is usually formed between the aluminum oxide layer and the surface of the silicon substrate, which affects the test of the dielectric constant of the aluminum oxide layer and causes the aluminum oxide layer There is an error in the test results of the dielectric constant.

SUMMARY OF THE INVENTION

In view of this, a first aspect of the present application provides a test method for dielectric constant, the test method comprising:

Provide a workpiece to be measured, the workpiece to be measured includes a base body and a part to be measured, the part to be measured is arranged on one side of the base body, the part to be measured includes a first layer to be measured and a second layer to be measured, so The first layer to be measured is arranged between the substrate and the second layer to be measured; the first optical thickness and the thickness of the first equivalent oxide layer of the first layer to be measured are obtained;

obtaining the second optical thickness and the second equivalent oxide thickness of the to-be-measured portion;

obtaining the first dielectric constant of the first layer to be measured;

The second to-be-measured is established from the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the first dielectric constant the dielectric constant model of the layer; and

The second dielectric constant of the second layer to be measured is calculated according to the model of the dielectric constant of the second layer to be measured.

In the test method provided by the first aspect of the present application, by adding a first layer to be measured between the second layer to be measured and the substrate, firstly, the first layer to be measured can be used to prevent extra layers on the surface of the substrate when preparing the second layer to be measured Forms an uncontrollable layer structure. Secondly, the second dielectric constant of the second layer to be measured can be accurately calculated by using the cooperation between the first layer to be measured and the second layer to be measured. Specifically, the first optical thickness of the first layer to be measured and the thickness of the first equivalent oxide layer can be obtained first, and then the second optical thickness and the thickness of the second equivalent oxide layer of the part to be measured can be obtained. Accurately know the optical film thickness and equivalent oxide thickness of the second layer to be measured. Then, the first dielectric constant of the first layer to be measured is obtained, and finally the dielectric constant model of the second layer to be measured can be established according to the obtained parameters and calculated according to the model of the dielectric constant of the second layer to be measured. the second dielectric constant of the second layer to be measured. The test method provided in the present application can accurately calculate the second dielectric constant of the second layer to be measured.

其中，K为所述第二介电常数，ε₁为所述第一介电常数，t₂为所述第二光学厚度，t₁为所述第一光学厚度，EOT₂为所述第二等效氧化层厚度，EOT₁为所述第一等效氧化层厚度。Wherein, the second dielectric constant model of the second to-be-measured layer includes:

Wherein, K is the second dielectric constant, ε ₁ is the first dielectric constant, t ₂ is the second optical thickness, t ₁ is the first optical thickness, and EOT ₂ is the second Equivalent oxide layer thickness, EOT ₁ is the first equivalent oxide layer thickness.

Wherein, after "providing the workpiece to be measured, and obtaining the first optical thickness and the first equivalent oxide thickness of the first layer to be measured", it also includes:

establishing a conversion model according to the first optical thickness;

calculating a third optical thickness of the first layer to be measured relative to the second layer to be measured according to the conversion model;

"According to the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the first dielectric constant of the first layer to be measured Establishing the dielectric constant model of the second to-be-measured layer" includes:

established from the first optical thickness, the first equivalent oxide thickness, the third optical thickness, the second equivalent oxide thickness, and the first dielectric constant of the first layer to be measured The dielectric constant model of the second layer to be measured.

其中，K为所述第二介电常数，ε₁为所述第一介电常数，t₂为所述第二光学厚度，t₃为所述第三光学厚度，EOT₂为所述第二等效氧化层厚度，EOT₁为所述第一等效氧化层厚度。Wherein, the second dielectric constant model of the second to-be-measured layer includes:

Wherein, K is the second dielectric constant, ε ₁ is the first dielectric constant, t ₂ is the second optical thickness, t ₃ is the third optical thickness, and EOT ₂ is the second Equivalent oxide layer thickness, EOT ₁ is the first equivalent oxide layer thickness.

Wherein, "providing the workpiece to be measured, and obtaining the first optical thickness and the first equivalent oxide thickness of the first layer to be measured" includes:

provide a matrix;

depositing a first layer to be measured on one side of the substrate;

obtaining a first optical thickness and a first equivalent oxide thickness of the first layer to be measured; and

A second layer to be measured is deposited on the side of the first layer to be measured facing away from the substrate.

Wherein, the substrate includes a silicon substrate, the first layer to be measured includes a silicon oxide layer, and the first dielectric constant of the first layer to be measured is 3.9.

Wherein, the second layer to be measured includes an aluminum oxide layer, and "depositing a second layer to be measured on the side of the first layer to be measured that is away from the substrate" includes:

Atomic layer deposition method is used to deposit a second layer to be measured on the side of the first layer to be measured that is away from the substrate; during the deposition process, the side of the first layer to be measured that is away from the substrate is passed through Mixed gas, wherein the mixed gas includes any one of trimethylamine or aluminum chloride and ozone.

A second aspect of the present application provides a dielectric constant testing device, the testing device is used to test the dielectric constant of a workpiece to be measured, wherein the workpiece to be measured includes a base body and a part to be measured, and the part to be measured is provided with On one side of the substrate, the part to be measured includes a first layer to be measured and a second layer to be measured, and the first layer to be measured is arranged between the substrate and the second layer to be measured; the The test device includes:

a first acquisition unit, configured to acquire the first optical thickness and the first equivalent oxide layer thickness of the first layer to be measured;

a second acquisition unit, configured to acquire the second optical thickness and the second equivalent oxide layer thickness of the to-be-measured portion;

a third acquiring unit, configured to acquire the first dielectric constant of the first to-be-measured layer;

a first establishing unit configured to calculate the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the first dielectric constant modeling the dielectric constant of the second layer to be measured; and

a first calculation unit, configured to calculate the second dielectric constant of the second to-be-measured layer according to the dielectric constant model of the second to-be-measured layer.

In the test device provided in the second aspect of the present application, each parameter is acquired by using the first acquisition unit, the second acquisition unit, and the third acquisition unit. The dielectric constant model of the second to-be-measured layer is established by the first establishment unit according to the parameters obtained above. Finally, the second dielectric constant of the second layer to be measured is calculated by the first calculation unit according to the dielectric constant model of the second layer to be measured. In the present application, the second dielectric constant of the second to-be-measured side can be calculated accurately and quickly through the cooperation between the above-mentioned units.

Wherein, the test device also includes:

a second establishment unit, configured to establish a conversion model according to the first optical thickness;

a second calculation unit, configured to calculate the third optical thickness of the first layer to be measured relative to the second layer to be measured according to the conversion model;

The first establishing unit is further configured to determine the first optical thickness, the first equivalent oxide thickness, the third optical thickness, the second equivalent oxide thickness, and the first The first dielectric constant of the layer to be measured establishes a model of the dielectric constant of the second layer to be measured.

A third aspect of the present application provides a dielectric constant testing device, the testing device includes a testing device, a processor, an input device, an output device, a memory, and a bus, the testing device, the processor, the The input device, the output device, the memory, and the bus are electrically connected to each other, the memory is used to store application program codes, and the processor is used to call the program codes to execute the program code provided by the first aspect of the present application testing method.

In the testing device provided in the third aspect of the present application, the processor invokes the program code to execute the testing method provided in the first aspect of the present application, so as to accurately calculate the second dielectric constant of the second layer to be measured.

A fourth aspect of the present application provides a computer-readable storage medium, where the computer storage medium stores a computer program, the computer program includes program instructions, and the program instructions, when executed by a processor, cause the processor to execute a program such as The test method provided in the first aspect of the present application.

In the computer-readable storage medium provided in the fourth aspect of the present application, when the program instructions are executed by the processor, the program instructions can accurately calculate the value of the second to-be-measured layer when the processor executes the testing method provided in the first aspect of the present application. The second dielectric constant.

Description of drawings

In order to describe the technical solutions in the embodiments of the present application more clearly, the accompanying drawings required to be used in the embodiments of the present application will be described below.

FIG. 1 is a process flow diagram of the testing method provided by the first embodiment of the present application.

FIG. 2 is a process flow diagram of the testing method provided by the second embodiment of the present application.

FIG. 3 is a process flow diagram of the testing method provided by the third embodiment of the present application.

FIG. 4 is a process flow diagram of the testing method provided by the fourth embodiment of the present application.

FIG. 5 is a schematic diagram of the electronic structure of the test device provided by the first embodiment of the present application.

FIG. 6 is a schematic diagram of the electronic structure of the test device provided by the second embodiment of the present application.

FIG. 7 is a schematic diagram of the electronic structure of the test equipment provided by the first embodiment of the present application.

Label description:

Test Device-1, Test Device-2, Detection Device-3, Processor-4, Input Device-5, Output Device-6, Memory-7, Bus-8, First Acquisition Unit-10, Second Acquisition Unit- 20. A third acquisition unit-30, a first establishment unit-40, a first calculation unit-50, a second establishment unit-60, and a second calculation unit-70.

Detailed ways

The following are the preferred embodiments of the present application. It should be pointed out that for those skilled in the art, without departing from the principles of the present application, several improvements and modifications can be made, and these improvements and modifications are also regarded as the present invention. The scope of protection applied for.

Please refer to FIG. 1 . FIG. 1 is a process flow diagram of the testing method provided by the first embodiment of the present application. In this embodiment, the testing method includes S100, S200, S300, S400, and S500. The details of S100, S200, S300, S400, and S500 are as follows.

S100, providing a workpiece to be measured, the workpiece to be measured includes a base body and a part to be measured, the part to be measured is provided on one side of the base body, and the part to be measured includes a first layer to be measured and a second layer to be measured , the first layer to be measured is arranged between the substrate and the second layer to be measured; the first optical thickness and the thickness of the first equivalent oxide layer of the first layer to be measured are obtained.

The workpiece to be measured is the workpiece to be measured in this application. Specifically, the workpiece to be measured includes a substrate for carrying the part to be measured, and the part to be measured includes a first layer to be measured and a second layer to be measured. The second dielectric constant of the second to-be-measured layer is a parameter that the application ultimately needs to test. First adding the first layer to be measured between the second layer to be measured and the substrate can make the preparation of the second layer to be measured on the surface of the first layer to be measured instead of on the surface of the substrate, so that Additional formation of uncontrollable layer structures on the surface of the substrate during the production of the second layer to be measured can be prevented.

For example, when the substrate is silicon and the second layer to be measured is aluminum oxide, when the aluminum oxide layer is prepared, an uncontrollable silicon oxide layer will inevitably be formed on the surface of the silicon substrate, but the relevant parameters of this silicon oxide layer but unable to measure. At this time, the first layer to be measured may be a silicon oxide layer, or other layer structures such as a silicon nitride layer. By adding the first layer to be measured, the generation of an uncontrollable layer structure is prevented, and the influence of the layer structure on the test result is avoided.

In addition, the present application needs to obtain the first optical thickness and the first equivalent oxide layer thickness of the first layer to be measured. The acquisition can be understood as measuring the first optical thickness of the first layer to be measured and the thickness of the first equivalent oxide layer by various measuring devices, and then automatically acquiring the above parameters, or manually inputting the above parameters by the user.

S200, acquiring the second optical thickness and the second equivalent oxide layer thickness of the to-be-measured portion.

Then, the second optical thickness and the second equivalent oxide thickness of the to-be-measured portion are obtained. According to the parameters obtained above, the optical thickness of the second layer to be measured and the equivalent thickness of the oxide layer can be known. That is, the difference between the second optical thickness and the first optical thickness is the optical thickness of the second layer to be measured, and the difference between the thickness of the second equivalent oxide layer and the thickness of the first equivalent oxide layer is the thickness of the second layer to be measured. Equivalent oxide thickness.

S300, acquiring a first dielectric constant of the first layer to be measured.

Then, the first dielectric constant of the first layer to be measured is obtained. Optionally, when the first layer to be measured is a silicon oxide layer, the first dielectric constant is 3.9.

S400, establishing the second optical thickness according to the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the first dielectric constant The dielectric constant model of the layer to be measured.

S500: Calculate a second dielectric constant of the second layer to be measured according to a dielectric constant model of the second layer to be measured.

Finally, a dielectric constant model of the second to-be-measured layer can be established according to the obtained parameters, and a second dielectric constant of the second to-be-measured layer can be calculated according to the dielectric constant model of the second to-be-measured layer.

To sum up, the test method provided by this application can avoid the interference of uncontrollable factors by adding the first layer to be measured, and can accurately calculate by the cooperation of the first layer to be measured, the second layer to be measured and the second layer to be measured. The second dielectric constant of the second layer to be measured is obtained.

Please refer to FIG. 2 together, which is a process flow diagram of the testing method provided by the second embodiment of the present application. In this embodiment, S100 "provide the workpiece to be measured, and obtain the first optical thickness and the first equivalent oxide thickness of the first layer to be measured" includes S110, S120, S130, and S140. The details of S110, S120, S130, and S140 are as follows.

S110, providing a substrate.

S120, depositing a first layer to be measured on one side of the substrate.

S130, acquiring the first optical thickness and the first equivalent oxide layer thickness of the first layer to be measured.

S140, depositing a second layer to be measured on the side of the first layer to be measured that is away from the substrate.

In this application, the first layer to be measured can be deposited on one side of the substrate. At this time, since there is only the first layer to be measured on the substrate, the first layer to be measured can be directly tested at this time, so as to obtain the first layer to be measured. The first optical thickness and the first equivalent oxide layer thickness effectively reduce the difficulty of obtaining the first optical thickness and the first equivalent oxide layer thickness, and improve the accuracy of the obtained parameters. After the parameters are acquired, a second layer to be measured is deposited on the side of the first layer to be measured that faces away from the substrate.

其中，K为所述第二介电常数，ε₁为所述第一介电常数，t₂为所述第二光学厚度，t₁为所述第一光学厚度，EOT₂为所述第二等效氧化层厚度，EOT₁为所述第一等效氧化层厚度。最后只需把上述获取到的参数代入第二介电常数模型中便可计算出K值。Optionally, the present application can use the parameters obtained by the above test method to establish a second dielectric constant model. Specifically, the second dielectric constant model of the second to-be-measured layer includes:

Wherein, K is the second dielectric constant, ε ₁ is the first dielectric constant, t ₂ is the second optical thickness, t ₁ is the first optical thickness, and EOT ₂ is the second Equivalent oxide layer thickness, EOT ₁ is the first equivalent oxide layer thickness. Finally, the K value can be calculated by substituting the obtained parameters into the second dielectric constant model.

Please refer to FIG. 3 together. FIG. 3 is a process flow diagram of the testing method provided by the third embodiment of the present application. In this embodiment, after S100 "provide the workpiece to be measured, and obtain the first optical thickness of the first layer to be measured and the thickness of the first equivalent oxide layer", S150 and S160 are further included. The details of S150 and S160 are as follows.

S150, establishing a conversion model according to the first optical thickness.

S160: Calculate a third optical thickness of the first layer to be measured relative to the second layer to be measured according to the conversion model.

Then, according to the test method provided in the above content, S400 "is based on the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the The first dielectric constant of the first to-be-measured layer establishes a dielectric constant model of the second to-be-measured layer" including S410. The detailed introduction of S410 is as follows.

S410, according to the first optical thickness, the first equivalent oxide thickness, the third optical thickness, the second equivalent oxide thickness, and the first dielectric of the first layer to be measured The constant models the dielectric constant of the second layer to be measured.

It can be known from the above content that the difference between the second optical film thickness and the first optical film thickness can obtain the optical film thickness of the second to-be-measured layer. However, since the optical film thickness is related to the refractive index, and the materials of the first layer to be measured and the second layer to be measured are different, the refractive indices of the first layer to be measured and the second layer to be measured are different, so if the second optical layer is directly used The film thickness is reduced by the first optical film thickness, and errors may occur at this time. The present application can establish a conversion model according to the first optical film thickness, the conversion model can convert the first optical film thickness, and convert the first optical film thickness into the third layer of the first to-be-measured layer relative to the second to-be-measured layer. In this case, the second optical film thickness is subtracted from the third optical film thickness to obtain a more accurate optical film thickness of the second to-be-measured layer.

其中，K为所述第二介电常数，ε₁为所述第一介电常数，t₂为所述第二光学厚度，t₃为所述第三光学厚度，EOT₂为所述第二等效氧化层厚度，EOT₁为所述第一等效氧化层厚度。最后只需把上述获取到的参数代入第二介电常数模型中便可计算出更准确的K值。Optionally, the present application can also use the above-mentioned third optical film thickness obtained by converting the model to establish the second dielectric constant model. Specifically, the second dielectric constant model of the second layer to be measured includes:

Wherein, K is the second dielectric constant, ε ₁ is the first dielectric constant, t ₂ is the second optical thickness, t ₃ is the third optical thickness, and EOT ₂ is the second Equivalent oxide layer thickness, EOT ₁ is the first equivalent oxide layer thickness. Finally, a more accurate K value can be calculated by substituting the obtained parameters into the second dielectric constant model.

Optionally, the substrate includes a silicon substrate, the first layer to be measured includes a silicon oxide layer, and the first dielectric constant of the first layer to be measured is 3.9. In the present application, a silicon substrate can be used, and a silicon oxide layer can be prepared on the silicon substrate, thereby reducing the difficulty of preparation. In addition, when measuring the dielectric constant, each parameter of silicon dioxide is usually used as a standard. Therefore, by depositing a silicon oxide layer on the silicon substrate in the present application, the calculation difficulty can be reduced and the calculation accuracy can be improved.

Please refer to FIG. 4 together. FIG. 4 is a process flow diagram of the testing method provided by the fourth embodiment of the present application. In this embodiment, the second layer to be measured includes an aluminum oxide layer, and S140 "depositing a second layer to be measured on the side of the first layer to be measured away from the substrate" includes S141. The details of S141 are as follows.

S141, using atomic layer deposition to deposit a second layer to be measured on the side of the first layer to be measured that is away from the substrate; during the deposition process, to the side of the first layer to be measured that is away from the substrate A mixed gas is introduced, wherein the mixed gas includes any one of trimethylamine or aluminum chloride and ozone.

When the second layer to be measured is an aluminum oxide layer, atomic layer deposition can be used in the present application to prepare, and a mixed gas is introduced, wherein the mixed gas includes any one of trimethylamine or aluminum chloride and ozone. Due to the presence of the first layer to be measured, the ozone does not react with the silicon substrate to create an uncontrollable layer of silicon oxide between the silicon substrate and the aluminum oxide layer.

In addition to the dielectric constant test method provided above, the present application also provides a dielectric constant test device. The test method and the test device provided by the embodiments of the present application can achieve the technical effect of the present application, and the two can be used together, of course, can also be used alone, which is not particularly limited in the present application. For example, as an embodiment, the test methods provided above may be implemented using the test apparatus provided below.

Please refer to FIG. 5 . FIG. 5 is a schematic diagram of an electronic structure of a testing device according to a first embodiment of the present application. In this embodiment, the testing device 1 is used to test the dielectric constant of the workpiece to be measured, wherein the workpiece to be measured includes a base body and a part to be measured, the part to be measured is arranged on one side of the base body, and the The part to be measured includes a first layer to be measured and a second layer to be measured, the first layer to be measured is arranged between the substrate and the second layer to be measured; the test device 1 includes a first acquisition unit 10 , the second acquisition unit 20 , the third acquisition unit 30 , the first establishment unit 40 , and the first calculation unit 50 . The first acquisition unit 10 is used for acquiring the first optical thickness and the first equivalent oxide layer thickness of the first layer to be measured. The second acquiring unit 20 is configured to acquire the second optical thickness and the second equivalent oxide layer thickness of the to-be-measured portion. The third acquiring unit 30 is configured to acquire the first dielectric constant of the first layer to be measured. The first establishing unit 40 is configured to determine the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the first dielectric constant A dielectric constant model of the second layer to be measured is established. The first calculation unit 50 is configured to calculate the second dielectric constant of the second to-be-measured layer according to the dielectric constant model of the second to-be-measured layer.

Please also refer to FIG. 6 , which is a schematic diagram of an electronic structure of a testing device according to a second embodiment of the present application. In this embodiment, the testing device 1 further includes a second establishment unit 60 and a second calculation unit 70 . Wherein, the second establishing unit 60 is configured to establish a conversion model according to the first optical thickness. The second calculation unit 70 is configured to calculate the third optical thickness of the first layer to be measured relative to the second layer to be measured according to the conversion model. The first establishing unit 40 is further configured to: The first dielectric constant of a layer to be measured establishes a dielectric constant model of the second layer to be measured.

Since the optical film thickness is related to the refractive index, and the materials of the first layer to be measured and the second layer to be measured are different, the refractive index of the first layer to be measured and the second layer to be measured are different, so if the second optical film is directly used The thickness of the first optical film is reduced from the thickness, and errors may occur at this time. The present application can convert the first optical film thickness into the third optical thickness of the first layer to be measured relative to the second layer to be measured through the cooperation of the second establishment unit 60 and the second calculation unit 70, and then use A more accurate optical film thickness of the second layer to be measured can be obtained by subtracting the third optical film thickness from the second optical film thickness.

其中，K为所述第二介电常数，ε₁为所述第一介电常数，t₂为所述第二光学厚度，t₃为所述第三光学厚度，EOT₂为所述第二等效氧化层厚度，EOT₁为所述第一等效氧化层厚度。Optionally, the second dielectric constant model of the second layer to be measured includes:

Wherein, K is the second dielectric constant, ε ₁ is the first dielectric constant, t ₂ is the second optical thickness, t ₃ is the third optical thickness, and EOT ₂ is the second Equivalent oxide layer thickness, EOT ₁ is the first equivalent oxide layer thickness.

Please refer to FIG. 7 . FIG. 7 is a schematic diagram of an electronic structure of the test equipment provided by the first embodiment of the present application. The testing device 2 includes a testing device 3 , a processor 4 , an input device 5 , an output device 6 , a memory 7 , and a bus 8 . The detection device 3, the processor 4, the input device 5, the output device 6, the memory 7, and the bus 8 are electrically connected to each other. The memory 7 is used to store application code, and the processor 4 is used to call the program code to execute the test method provided by the above-mentioned embodiments of the present application.

The test device 2 provided by the present application can accurately calculate the second dielectric constant of the second to-be-measured layer by calling the program code by the processor 4 to execute the test method provided by the above-mentioned embodiments of the present application.

The present application also provides a computer-readable storage medium, where the computer storage medium stores a computer program, the computer program includes program instructions, and the program instructions, when executed by the processor 4, cause the processor 4 to execute a program such as The test methods provided by the above-mentioned embodiments of the present application.

In the computer-readable storage medium provided by the present application, when the program instructions are executed by the processor 4, when the processor 4 executes the test method provided by the above-mentioned embodiments of the present application, the program instruction can accurately calculate the first value of the second layer to be measured. 2 Dielectric constant.

Those of ordinary skill in the art can understand that the realization of all or part of the processes in the above-mentioned embodiments can be accomplished by instructing the relevant hardware through a computer program, and the program can be stored in a computer-readable storage medium, and the program can be stored in a computer-readable storage medium. During execution, it may include the processes of the embodiments of the above-mentioned methods. The storage medium may be a U disk, a magnetic disk, an optical disk, a read-only memory (Read-Only Memory, ROM) or a random access memory (Random Access Memory, RAM), and the like.

The present application may be a system, method and/or computer program product. The computer program product may comprise a computer-readable storage medium having computer-readable program instructions loaded thereon for causing the processor 4 to implement various aspects of the present application.

A computer-readable storage medium may be a tangible device that can hold and store instructions for use by the instruction execution device. Optionally, the computer-readable storage medium includes, but is not limited to, electrical storage devices, magnetic storage devices, optical storage devices, electromagnetic storage devices, semiconductor storage devices, or any suitable combination of the foregoing. Further optionally, computer readable storage media (non-exhaustive list) include: portable computer disks, hard disks, random access memory (RAM), read only memory (ROM), erasable programmable read only memory (EPROM) or flash memory), static random access memory (SRAM), portable compact disk read only memory (CD-ROM), digital versatile disk (DVD), memory sticks, floppy disks, mechanically coded devices, such as printers with instructions stored thereon Hole cards or raised structures in grooves, and any suitable combination of the above. Computer-readable storage media, as used herein, are not to be construed as transient signals per se, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (eg, light pulses through fiber optic cables), or through electrical wires transmitted electrical signals.

The computer readable program instructions described herein may be downloaded to various computing/processing devices from a computer readable storage medium, or to an external computer or external storage device over a network such as the Internet, a local area network, a wide area network, and/or a wireless network. The network may include copper transmission cables, fiber optic transmission, wireless transmission, routers, firewalls, switches, gateway computers, and/or edge servers. A network adapter card or network interface in each computing/processing device receives computer-readable program instructions from a network and forwards the computer-readable program instructions for storage in a computer-readable storage medium in each computing/processing device .

Computer program instructions for carrying out the operations of the present application may be assembly instructions, instruction set architecture (ISA) instructions, machine instructions, machine-dependent instructions, microcode, firmware instructions, state setting data, or instructions in one or more programming languages. Source or object code, written in any combination, including object-oriented programming languages, such as Smalltalk, C++, etc., and conventional procedural programming languages, such as the "C" language or similar programming languages. The computer readable program instructions may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer, or entirely on the remote computer or server implement. In the case of a remote computer, the remote computer may be connected to the user's computer through any kind of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (eg, using an Internet service provider through the Internet connect). In some embodiments, custom electronic circuits, such as programmable logic circuits, field programmable gate arrays (FPGAs), or programmable logic arrays (PLAs), can be personalized by utilizing state information of computer readable program instructions. Computer readable program instructions are executed to implement various aspects of the present application.

Aspects of the present application are described herein with reference to flowchart illustrations and/or block diagrams of methods, apparatus and computer program products according to embodiments of the present application. It will be understood that each block of the flowchart illustrations and/or block diagrams, and combinations of blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer readable program instructions.

These computer readable program instructions may be provided to the processor 4 of a general purpose computer, special purpose computer or other programmable data processing device, thereby producing a machine in which the instructions are executed by the processor 4 of the computer or other programmable data processing device When executed, results in means for implementing the functions/acts specified in one or more blocks of the flowchart and/or block diagrams. These computer readable program instructions can also be stored in a computer readable storage medium, these instructions cause a computer, programmable data processing apparatus and/or other equipment to operate in a specific manner, so that the computer readable medium on which the instructions are stored includes An article of manufacture comprising instructions for implementing various aspects of the functions/acts specified in one or more blocks of the flowchart and/or block diagrams.

Computer readable program instructions can also be loaded onto a computer, other programmable data processing apparatus, or other equipment to cause a series of operational steps to be performed on the computer, other programmable data processing apparatus, or other equipment to produce a computer-implemented process , thereby causing instructions executing on a computer, other programmable data processing apparatus, or other device to implement the functions/acts specified in one or more blocks of the flowcharts and/or block diagrams.

The flowchart and block diagrams in the Figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of instructions, which comprises one or more functions for implementing the specified logical function(s) executable instructions. In some alternative implementations, the functions noted in the blocks may occur out of the order noted in the figures. For example, two blocks in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It is also noted that each block of the block diagrams and/or flowchart illustrations, and combinations of blocks in the block diagrams and/or flowchart illustrations, can be implemented in dedicated hardware-based systems that perform the specified functions or actions , or can be implemented in a combination of dedicated hardware and computer instructions.

The content provided by the embodiments of the present application has been introduced in detail above, and the principles and embodiments of the present application have been described and explained herein. Persons of ordinary skill, according to the idea of the present application, will have changes in the specific implementation manner and application scope. In conclusion, the contents of this specification should not be construed as a limitation on the present application.

Claims (11)

1. the test method of a dielectric constant, is characterized in that, described test method comprises: Provide a workpiece to be measured, the workpiece to be measured includes a base body and a part to be measured, the part to be measured is arranged on one side of the base body, the part to be measured includes a first layer to be measured and a second layer to be measured, so The first layer to be measured is arranged between the substrate and the second layer to be measured; the first optical thickness and the thickness of the first equivalent oxide layer of the first layer to be measured are obtained; obtaining the second optical thickness and the second equivalent oxide thickness of the to-be-measured portion; obtaining the first dielectric constant of the first layer to be measured; The second to-be-measured is established from the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the first dielectric constant the dielectric constant model of the layer; and The second dielectric constant of the second layer to be measured is calculated according to the model of the dielectric constant of the second layer to be measured. 2. The test method according to claim 1, wherein "providing the workpiece to be measured, and obtaining the first optical thickness and the first equivalent oxide thickness of the first layer to be measured" comprises: provide a matrix; depositing a first layer to be measured on one side of the substrate; obtaining a first optical thickness and a first equivalent oxide thickness of the first layer to be measured; and A second layer to be measured is deposited on the side of the first layer to be measured facing away from the substrate. 3. The test method according to claim 2, wherein the second dielectric constant model of the second layer to be measured comprises:

Wherein, K is the second dielectric constant, ε ₁ is the first dielectric constant, t ₂ is the second optical thickness, t ₁ is the first optical thickness, and EOT ₂ is the second Equivalent oxide layer thickness, EOT ₁ is the first equivalent oxide layer thickness. 4. The test method according to claim 1, characterized in that, after "providing the workpiece to be measured, and obtaining the first optical thickness and the first equivalent oxide thickness of the first layer to be measured", further comprising: establishing a conversion model according to the first optical thickness; calculating a third optical thickness of the first layer to be measured relative to the second layer to be measured according to the conversion model; "According to the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the first dielectric constant of the first layer to be measured Establishing the dielectric constant model of the second to-be-measured layer" includes: established from the first optical thickness, the first equivalent oxide thickness, the third optical thickness, the second equivalent oxide thickness, and the first dielectric constant of the first layer to be measured The dielectric constant model of the second layer to be measured. 5. The test method of claim 4, wherein the second dielectric constant model of the second layer to be measured comprises:

Wherein, K is the second dielectric constant, ε ₁ is the first dielectric constant, t ₂ is the second optical thickness, t ₃ is the third optical thickness, and EOT ₂ is the second Equivalent oxide layer thickness, EOT ₁ is the first equivalent oxide layer thickness. 6 . The test method of claim 2 , wherein the substrate comprises a silicon substrate, the first layer to be measured comprises a silicon oxide layer, and the first dielectric layer of the first layer to be measured The constant is 3.9. 7. The test method according to claim 6, wherein the second layer to be measured comprises an aluminum oxide layer, and a second layer to be measured is deposited on the side of the first layer to be measured that is away from the substrate "include: Atomic layer deposition method is used to deposit a second layer to be measured on the side of the first layer to be measured that is away from the substrate; during the deposition process, the side of the first layer to be measured that is away from the substrate is passed through Mixed gas, wherein the mixed gas includes any one of trimethylamine or aluminum chloride and ozone. 8. A test device for dielectric constant, characterized in that, the test device is used to test the dielectric constant of a workpiece to be measured, wherein the workpiece to be measured includes a substrate and a portion to be measured, and the portion to be measured is provided in On one side of the base body, the to-be-measured part includes a first to-be-measured layer and a second to-be-measured layer, and the first to-be-measured layer is provided between the base body and the second to-be-measured layer; the The test setup includes: a first acquisition unit, configured to acquire the first optical thickness and the first equivalent oxide layer thickness of the first layer to be measured; a second acquisition unit, configured to acquire the second optical thickness and the second equivalent oxide layer thickness of the to-be-measured portion; a third acquiring unit, configured to acquire the first dielectric constant of the first to-be-measured layer; a first establishing unit configured to calculate the first optical thickness, the first equivalent oxide thickness, the second optical thickness, the second equivalent oxide thickness, and the first dielectric constant modeling the dielectric constant of the second layer to be measured; and a first calculation unit, configured to calculate the second dielectric constant of the second to-be-measured layer according to the dielectric constant model of the second to-be-measured layer. 9. The test device of claim 8, wherein the test device further comprises: a second establishment unit, configured to establish a conversion model according to the first optical thickness; a second calculation unit, configured to calculate the third optical thickness of the first layer to be measured relative to the second layer to be measured according to the conversion model; The first establishing unit is further configured to determine the first optical thickness, the first equivalent oxide thickness, the third optical thickness, the second equivalent oxide thickness, and the first The first dielectric constant of the layer to be measured establishes a model of the dielectric constant of the second layer to be measured. 10. A test device for dielectric constant, characterized in that the test device comprises a test device, a processor, an input device, an output device, a memory, and a bus, the test device, the processor, the input device The device, the output device, the memory, and the bus are electrically connected to each other, the memory is used to store application code, and the processor is used to call the program code to execute any one of claims 1-7 The test method described in item. 11. A computer-readable storage medium, characterized in that the computer storage medium stores a computer program, the computer program comprising program instructions, the program instructions, when executed by a processor, cause the processor to execute as claimed The test method described in any one of requirements 1-7.

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