CN110536085B - Reading circuit and image correction method - Google Patents
Reading circuit and image correction method Download PDFInfo
- Publication number
- CN110536085B CN110536085B CN201910770598.5A CN201910770598A CN110536085B CN 110536085 B CN110536085 B CN 110536085B CN 201910770598 A CN201910770598 A CN 201910770598A CN 110536085 B CN110536085 B CN 110536085B
- Authority
- CN
- China
- Prior art keywords
- pixel array
- pixel
- substrate temperature
- temperature data
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a reading circuit and an image correction method, and relates to the field of uncooled infrared detectors; the image correction method includes: acquiring an original image data matrix and pixel array substrate temperature data from a readout circuit comprising a pixel substrate temperature sensor; adjusting the non-uniformity correction coefficient based on the pixel array substrate temperature data and the non-uniformity correction coefficient look-up table; correcting the original image data matrix by using the adjusted non-uniformity correction coefficient and the non-uniformity correction algorithm to obtain a processed uniform image data matrix; the method disclosed by the invention can obtain the temperature data of the pixel array substrate by utilizing the temperature sensor of the pixel substrate in the reading circuit, and carry out temperature drift correction based on the temperature data of the pixel array substrate, thereby improving the correction precision, reducing the test cost for obtaining correction parameters and the hardware cost during actual correction, and accelerating the test speed.
Description
Technical Field
The invention relates to the field of uncooled infrared detectors, in particular to a reading circuit and an image correction method.
Background
Ideally, an uncooled infrared image sensor operates such that all pixels of the pixel array are uniformly irradiated, thereby producing a uniform output. However, for an actual pixel array, due to process errors, random fluctuation, non-ideality of etching, doping and the like in the manufacturing process, the non-ideality of the pixel array is caused, so that the response of the pixel array under uniform radiation is also non-uniform, the imaging effect is seriously affected, and therefore non-uniformity correction needs to be performed on an image.
In a conventional non-uniformity correction scheme, one or more temperature sensors built into the sensor read the global substrate temperature; however, due to the uneven distribution of the substrate temperature, the global substrate temperature replaces the substrate temperature of the pixels, so that temperature measurement errors exist, and the temperature measurement errors have extremely strong uncertainty; because the traditional temperature drift correction method is based on calibrating non-uniformity at different temperatures and carrying out temperature drift fitting, and then the non-uniformity is calculated according to a fitting function and the current temperature in the actual working process of the temperature sensor, the temperature drift fitting difficulty is increased due to the existence of temperature measurement errors, and the temperature drift curve obtained when the temperature measurement errors are not eliminated is more complex than a theoretical temperature drift curve and has the characteristic of difficult fitting such as curve inflection point.
In order to deal with the curve inflection point which is difficult to fit, the traditional method usually adopts a method of increasing the number of fitting points to carry out multi-point numerical fitting, and the method causes the fitting cost to be increased; in addition, the fitting of each temperature point needs to acquire the output of all pixels in the whole pixel array to calibrate the reference value of the output of the pixel array, and the calibration cost is increased due to the multi-point fitting; and due to the dynamic uncertainty between the substrate temperature and the global temperature, the correction effect may be poor in an environment where the ambient temperature changes drastically.
Disclosure of Invention
In order to solve the problems in the prior art, embodiments of the present invention provide a readout circuit and an image correction method.
A first aspect of embodiments of the present application provides a readout circuit, including: the pixel array, the row selection control circuit, the time sequence control circuit and the column reading circuit; the pixel array and the time sequence control circuit are connected with the row selection control circuit and the column readout circuit; and a distributed pixel substrate temperature sensor is arranged in the pixel array.
In some embodiments, Q pixels in the pixel array share one pixel substrate temperature sensor, wherein Q ≧ 2 and is a natural number; alternatively, one pixel substrate temperature sensor is built in each pixel in the pixel array.
In some embodiments, the pixel array comprises at least a pixel resistor and a CMOS circuit layer; the pixel resistor is connected with the CMOS circuit layer and is positioned above the CMOS circuit layer; the pixel substrate temperature sensor is located in a CMOS circuit layer.
In some embodiments, raw image data matrix and pixel array substrate temperature data are acquired from the readout circuitry including the pixel substrate temperature sensor; adjusting a non-uniformity correction coefficient based on the pixel array substrate temperature data and a non-uniformity correction coefficient look-up table; and correcting the original image data matrix by using the adjusted non-uniformity correction coefficient and the non-uniformity correction algorithm to obtain a processed uniform image data matrix.
A second aspect of an embodiment of the present application provides an image correction method, including:
and 103, correcting the original image data matrix by using the adjusted non-uniformity correction coefficient and the non-uniformity correction algorithm to obtain a processed uniform image data matrix.
In some embodiments, the image correction method of claim 5, wherein the readout circuitry includes an array of pixels; q pixels in the pixel array share one pixel substrate temperature sensor; or, each pixel in the pixel array is internally provided with one pixel substrate temperature sensor; wherein Q is not less than 2 and is a natural number.
In some embodiments, when Q pixels in the pixel array share one pixel substrate temperature sensor, step 101 specifically includes:
a1, acquiring an original image data matrix and pixel array local substrate temperature data from a reading circuit comprising a pixel substrate temperature sensor;
and A2, obtaining the pixel array substrate temperature data according to the pixel array local substrate temperature data.
Specifically, step a2 specifically includes: inputting the temperature data of the local substrate of the pixel array to a temperature data processing module; and outputting the temperature data of the pixel array substrate after the temperature data is processed by the temperature data processing module.
More specifically, the processing of the pixel array local substrate temperature data by the temperature data processing module includes filtering and linear interpolation.
In some embodiments, the readout circuitry can set a frame time to exclusively use as a readout frame for pixel array substrate temperature data.
The invention has the beneficial effects that: the pixel array substrate temperature data are obtained by using the pixel substrate temperature sensor contained in the readout circuit, and temperature drift correction is carried out based on the pixel array substrate temperature data, so that the correction precision is improved, the test cost for obtaining correction parameters and the hardware cost during actual correction are reduced, and the test speed is accelerated.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic flow chart diagram illustrating a method of image correction according to some embodiments of the present application;
FIG. 2 is a schematic diagram of a sensing circuit according to some embodiments of the present application;
FIG. 3 is a partial isometric view of an array of pixels according to some embodiments of the present application;
FIG. 4 is a partial top view of a CMOS circuit layer according to some embodiments of the present application;
FIG. 5 is a partial isometric view of an array of pixels according to some embodiments of the present application;
fig. 6 is a partial top view of a CMOS circuit layer according to some embodiments of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the prior art, due to the process error, random fluctuation, non-ideality of etching, doping and the like in the processing and manufacturing process, the non-ideality of a pixel array is caused, so that the response of the pixel array under uniform radiation is also non-uniform, the imaging effect is seriously influenced, and therefore non-uniformity correction needs to be carried out on an image. The non-uniformity correction parameters are defined as coefficients used for compensating the pixel response non-uniformity errors in the correction step, and generally comprise offset correction parameters and response rate correction parameters. Since the non-uniformity of the pixel array is very sensitive to the substrate temperature itself, the non-uniformity of the pixel array changes when the temperature of the pixel substrate changes, and temperature compensation needs to be performed on non-uniformity correction parameters:
NUCi，j＝fi，j(Tsub，i，j)(1)
wherein NUCi，jDenotes a certain non-uniformity correction parameter, f, for the (i, j) th pixel in an array of pixels of size M Ni.jA temperature compensation function, T, representing a non-uniformity correction parameter for the pixelsub，i，jRepresenting the substrate temperature of the pixel.
In a conventional non-uniformity correction scheme, one or more temperature sensors built into the image sensor read out the global substrate temperature Tsub，g. In the temperature compensation calculation, the global substrate temperature T is generally used due to the non-uniform distribution of the substrate temperaturesub，gSubstrate temperature T instead of pixelsub，i，jHowever, this simple alternative would have a temperature measurement error Δ Tsub，i，jTemperature measurement error Δ Tsub，i，jRepresenting the difference between the actual temperature of the pixel and the global temperature, i.e. Tsub，g＝Tsub，i，j+ΔTsub，i，j. Temperature measurement error delta Tsub，i，jThe uncertainty of (2) is mainly expressed in the following 3 points: 1. temperature measurement error delta Tsub，i，jNot a fixed value but a value that varies with the overall temperature change, the relationship of which to the global substrate temperature is difficult to determine; 2. temperature measurement error delta Tsub，i，jHas no spaceUniformity, i.e. Δ Tsub，i，jBut also to pixel location (i, j); 3. when the ambient temperature changes dynamically, Δ Tsub，i，jIs uncertain.
Because the traditional temperature drift correction method is based on calibrating non-uniformity at different temperatures and carrying out temperature drift fitting, and then the non-uniformity is calculated according to a fitting function and the current temperature in the actual working process of the temperature sensor, the temperature drift fitting difficulty is increased due to the existence of temperature measurement errors, and the temperature drift curve obtained when the temperature measurement errors are not eliminated is more complex than a theoretical temperature drift curve and has the characteristic of difficult fitting such as curve inflection point.
In order to deal with the curve inflection point which is difficult to fit, the traditional method usually adopts a method of increasing the number of fitting points to carry out multi-point numerical fitting, and the method causes the fitting cost to be increased; in addition, the fitting of each temperature point needs to acquire the output of all pixels in the whole pixel array to calibrate the reference value of the output of the pixel array, and the calibration cost is increased due to the multi-point fitting; and due to the dynamic uncertainty between the substrate temperature and the global temperature, the correction effect may be poor in an environment where the ambient temperature changes drastically.
The traditional non-uniformity correction process reads out the global substrate temperature based on a traditional reading circuit and adjusts the non-uniformity correction coefficient by matching with the global substrate temperature and the non-uniformity correction coefficient lookup table; and processing the original image data matrix based on the adjusted non-uniformity correction coefficient and a non-uniformity correction algorithm so as to obtain a processed uniform image data matrix.
In order to overcome the defects of increased fitting cost, increased calibration cost and unsatisfactory correction precision caused by using the global substrate temperature to replace the substrate temperature of each pixel, the invention provides an image correction method, as shown in fig. 1, which specifically comprises the following steps:
specifically, the image correction method according to claim 5, wherein the readout circuit includes a pixel array; q pixels in the pixel array share one pixel substrate temperature sensor; or, each pixel in the pixel array is internally provided with one pixel substrate temperature sensor; wherein Q is not less than 2 and is a natural number.
In some embodiments, when Q pixels in the pixel array share one pixel substrate temperature sensor, step 101 specifically includes:
a1, acquiring an original image data matrix and pixel array local substrate temperature data from a reading circuit comprising a pixel substrate temperature sensor;
and A2, obtaining the pixel array substrate temperature data according to the pixel array local substrate temperature data. Specifically, step a2 specifically includes: inputting the temperature data of the local substrate of the pixel array to a temperature data processing module; and outputting the temperature data of the pixel array substrate after the temperature data is processed by the temperature data processing module.
More specifically, the processing of the pixel array local substrate temperature data by the temperature data processing module includes filtering and linear interpolation.
And 103, correcting the original image data matrix by using the adjusted non-uniformity correction coefficient and the non-uniformity correction algorithm to obtain a processed uniform image data matrix.
As shown in fig. 2, in one embodiment of the present invention, a schematic diagram of a readout circuit including a pixel substrate temperature sensor is disclosed; specifically, the readout circuit comprises an M × N pixel array, a row selection control circuit, a timing control circuit and a column readout circuit; the M multiplied by N pixel array and the time sequence control circuit are connected with the row selection control circuit and the column readout circuit; a distributed pixel substrate temperature sensor is arranged in the M multiplied by N pixel array; m, N are all natural numbers greater than zero.
More specifically, a pixel substrate temperature sensor may be shared by a plurality of pixels in the M × N pixel array, a pixel substrate temperature sensor may be embedded in each pixel in the pixel array, or the pixel substrate temperature sensors may be arranged in rows and columns.
In an embodiment of the present invention, as shown in fig. 3, a partial perspective view of an mxn pixel array is disclosed, in which an actual circuit connection situation of a pixel substrate temperature sensor shared by 4 pixels is shown.
Specifically, the perspective view discloses the spatial relationship between the pixel resistor and the CMOS circuit layer in the M × N pixel array, namely the pixel resistor is positioned above the CMOS circuit layer and is connected with the CMOS circuit through the electrical contact between a bridge pier and the bottom of the bridge pier; wherein the pixel substrate temperature sensor is located in the CMOS circuit layer.
Further, as shown in fig. 4, a partial top view of a CMOS circuit layer corresponding to fig. 3 is disclosed; on the CMOS circuit layer are included bridge pier electrical contacts, a pixel substrate temperature sensor, a plurality of MOS switches, a row select signal line, a temperature sensor gate signal line, and Vbias and VROIC voltages.
Further, in an array of pixels of size M x N, one pixel substrate temperature sensor is shared for every four pixels, and there are a total of Q rows of pixel substrate temperature sensors, wherein,
reading out the local substrate temperature data of the pixel array in X rows (X is more than or equal to 1 and less than or equal to N and is a natural number) in each frame (N is more than or equal to 0 and is a natural number; Q is rounded upwards); when the pixel substrate temperature sensor reads data, the image data of the previous frame is used for the pixel edge of the occupied reading circuit
The frame reads out the local substrate temperature data of the whole pixel array.
Assuming that the readout circuit operates at a frame rate of F, i.e., F frames of data are read out per second, all pixel array local substrate temperature data readout is completed every T1 seconds, wherein
And is a natural number.
And processing the read out local substrate temperature data of the pixel array to obtain the substrate temperature data of the pixel array.
Adjusting the non-uniformity correction coefficient based on the pixel array substrate temperature data and the non-uniformity correction coefficient look-up table; and correcting the original image data matrix by using the adjusted non-uniformity correction coefficient and the non-uniformity correction algorithm to obtain a processed uniform image data matrix.
In another embodiment of the present invention, as shown in fig. 5, a partial perspective view of an mxn pixel array is disclosed, in which the perspective view shows the actual circuit connection of each pixel of the mxn pixel array individually sharing a pixel substrate temperature sensor; accordingly, as shown in fig. 6, a partial top view of a CMOS circuit layer corresponding to fig. 5 is disclosed;
furthermore, in the pixel array with the size of M multiplied by N, a pixel substrate temperature sensor is arranged in each pixel, X (X is more than or equal to 1 and is less than or equal to N and is a natural number) rows of pixel substrate temperature sensors are shared in total, local substrate temperature data of the pixel array in X rows (X is more than or equal to 1 and is less than or equal to N and is a natural number) are read out in each frame, when the pixel substrate temperature sensors read out data, the pixel edges of the occupied reading circuit use the image data of the previous frame, and the whole pixel array substrate temperature data are read out through P frames; wherein,
and P is rounded up.
Assuming the readout circuit operating frame rate is F, i.e., reading F frames of data per second, the pixel array local substrate temperature data is updated every T2 seconds, where
And is a natural number.
It should be noted that, in this embodiment, the data read by the readout circuit is the temperature data of the pixel array substrate, and does not need to be processed by the temperature data processing module.
Adjusting the non-uniformity correction coefficient based on the pixel array substrate temperature data and the non-uniformity correction coefficient look-up table; and correcting the original image data matrix by using the adjusted non-uniformity correction coefficient and the non-uniformity correction algorithm to obtain a processed uniform image data matrix.
It should be noted that, in the above embodiment, the pixel substrate temperature sensor may set a special frame time to be exclusively used as a temperature data readout frame, where the frame is used to read out pixel array local substrate temperature data or pixel array substrate temperature data of all rows; assuming that the working frame frequency of the reading circuit is F, namely F frame data is read out every second, wherein the F frame data comprises F-1 frame image data, 1 frame is used for reading out pixel array local substrate temperature data or pixel array substrate temperature data of all rows, and all pixel array local substrate temperature data or pixel array substrate temperature data is read out every 1 second; it may also be arranged that the temperature readout is set every 2 seconds, i.e. the data read out every 2 seconds comprises 2F-1 frames of image data, 1 frame is used for reading out the pixel array local substrate temperature data or pixel array substrate temperature data of all rows, and then the temperature data of all local temperature sensors is read out every 2 seconds.
It should be noted that the pixel substrate temperature sensor may have a plurality of readout modes when reading out the local substrate temperature data of the pixel array or the substrate temperature data of the pixel array, for example, a preset number of rows are read out at a time, all rows are read out in multiple times or all rows are read out at a time with a preset time interval, or may be a mixed readout mode of the latter two modes.
The invention discloses a reading circuit and an image correction method, wherein the reading circuit comprises a pixel substrate temperature sensor to obtain the temperature data of a pixel array substrate; the temperature drift correction is carried out based on the temperature data of the pixel array substrate, so that the test cost for obtaining correction parameters and the hardware cost during actual correction are reduced, the temperature drift correction precision is improved, and the compensation problem of temperature drift dynamic change can be solved; meanwhile, the invention brings the following advantages:
1. the fitting function is simplified: when fitting pixel non-uniformity with pixel array substrate temperature data, a simple function model can be selected for fitting without complex multi-point numerical fitting.
2. The calibration cost is reduced: because the fitting temperature points required to achieve the same accuracy are reduced, the testing speed is increased, and the data volume for calibration is reduced.
3. The correction accuracy is high: accurate compensation of dynamic temperature drift can be achieved, and fixed pattern noise caused by temperature change is reduced.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. A sensing circuit, the sensing circuit comprising: the pixel array, the row selection control circuit, the time sequence control circuit and the column reading circuit; the pixel array and the time sequence control circuit are connected with the row selection control circuit and the column readout circuit; a distributed pixel substrate temperature sensor is arranged in the pixel array;
the pixel array and the time sequence control circuit are connected with the row selection control circuit and the column readout circuit, and the pixel array and the time sequence control circuit comprise: the pixel array is respectively connected with the row selection control circuit and the column readout circuit, and the time sequence control circuit is respectively connected with the row selection control circuit and the column readout circuit;
q pixels in the pixel array share one pixel substrate temperature sensor, wherein Q is more than or equal to 2 and is a natural number; or, each pixel in the pixel array is internally provided with one pixel substrate temperature sensor; wherein Q pixels in the pixel array share one pixel substrate temperature sensor, the pixel substrate temperature sensor comprises a data acquisition module and a substrate data module,
the data acquisition module is used for acquiring an original image data matrix and pixel array local substrate temperature data from a reading circuit comprising a pixel substrate temperature sensor;
the substrate data module is used for obtaining pixel array substrate temperature data according to the pixel array local substrate temperature data.
2. A readout circuit according to claim 1, wherein the pixel array comprises at least a pixel resistor and CMOS circuitry layer; the pixel resistor is connected with the CMOS circuit layer and is positioned above the CMOS circuit layer; the pixel substrate temperature sensor is located in the CMOS circuit layer.
3. A readout circuit according to claim 1, wherein raw image data matrix and pixel array substrate temperature data are obtained from the readout circuit containing the pixel substrate temperature sensor; adjusting a non-uniformity correction coefficient based on the pixel array substrate temperature data and a non-uniformity correction coefficient look-up table; and correcting the original image data matrix by using the adjusted non-uniformity correction coefficient and the non-uniformity correction algorithm to obtain a processed uniform image data matrix.
4. An image correction method, comprising:
step 101, acquiring an original image data matrix and pixel array substrate temperature data from a reading circuit comprising a pixel substrate temperature sensor;
step 102, adjusting a non-uniformity correction coefficient based on the pixel array substrate temperature data and a non-uniformity correction coefficient lookup table;
103, correcting the original image data matrix by using the adjusted non-uniformity correction coefficient and a non-uniformity correction algorithm to obtain a processed uniform image data matrix;
the readout circuit comprises a pixel array; q pixels in the pixel array share one pixel substrate temperature sensor; or, each pixel in the pixel array is internally provided with one pixel substrate temperature sensor; wherein Q is more than or equal to 2 and is a natural number;
when Q pixels in the pixel array share one pixel substrate temperature sensor, step 101 specifically includes:
a1, acquiring an original image data matrix and pixel array local substrate temperature data from a reading circuit comprising a pixel substrate temperature sensor;
and A2, obtaining the pixel array substrate temperature data according to the pixel array local substrate temperature data.
5. The image correction method according to claim 4, wherein step A2 specifically includes: inputting the temperature data of the local substrate of the pixel array to a temperature data processing module; and outputting the temperature data of the pixel array substrate after the temperature data is processed by the temperature data processing module.
6. The image correction method of claim 5, wherein the processing of the pixel array local substrate temperature data by the temperature data processing module includes filtering and linear interpolation.
7. The method of claim 4, wherein the readout circuit sets a frame time for a readout frame dedicated to the pixel array substrate temperature data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910770598.5A CN110536085B (en) | 2019-08-20 | 2019-08-20 | Reading circuit and image correction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910770598.5A CN110536085B (en) | 2019-08-20 | 2019-08-20 | Reading circuit and image correction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110536085A CN110536085A (en) | 2019-12-03 |
| CN110536085B true CN110536085B (en) | 2022-03-11 |
Family
ID=68663853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910770598.5A Active CN110536085B (en) | 2019-08-20 | 2019-08-20 | Reading circuit and image correction method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110536085B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114902651A (en) * | 2020-02-26 | 2022-08-12 | 深圳帧观德芯科技有限公司 | Imaging system and method of operation |
| CN113473048B (en) * | 2021-06-16 | 2022-08-30 | 天津大学 | Non-uniformity correction method for pulse array image sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101568813A (en) * | 2006-10-20 | 2009-10-28 | 模拟装置公司 | Die temperature sensors |
| CN103308178A (en) * | 2013-06-04 | 2013-09-18 | 电子科技大学 | Non-uniformity correction method for non-refrigeration infrared focal plane array |
| CN109282903A (en) * | 2017-07-20 | 2019-01-29 | 南京大学 | High-performance CMOS infrared microbolometer based on surface electromagnetic wave resonance |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5546125B2 (en) * | 2005-04-01 | 2014-07-09 | トルンプ・ヴェルクツォイクマシーネン・ゲーエム・ベーハー・ウント・コンパニ・カーゲー | Optical element and method for recording beam parameters comprising a temperature sensor provided in the form of a pixel matrix |
| JP5017895B2 (en) * | 2006-03-15 | 2012-09-05 | 日産自動車株式会社 | Infrared detector |
| JP5396617B2 (en) * | 2006-05-24 | 2014-01-22 | 学校法人立命館 | Infrared array sensor |
| CN101949737B (en) * | 2010-08-20 | 2012-05-30 | 电子科技大学 | Row gating circuit of infrared focal plane array |
| WO2012067282A1 (en) * | 2010-11-17 | 2012-05-24 | (주)이지템 | Mobile device and method for measuring temperature of thermal picture including body temperature |
| CN104251740A (en) * | 2014-09-18 | 2014-12-31 | 电子科技大学 | Readout circuit of uncooled infrared focal plane array |
| CN104964746B (en) * | 2015-06-17 | 2018-04-10 | 北京空间机电研究所 | Based on uncooled infrared imaging system and asymmetric correction method without shutter |
| CN105466566A (en) * | 2015-12-05 | 2016-04-06 | 中国航空工业集团公司洛阳电光设备研究所 | An infrared nonuniformity correction real time compensation method |
| CN110006538B (en) * | 2019-03-20 | 2020-06-05 | 北京安酷智芯科技有限公司 | Non-refrigeration infrared focal plane array reading circuit without TEC |
-
2019
- 2019-08-20 CN CN201910770598.5A patent/CN110536085B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101568813A (en) * | 2006-10-20 | 2009-10-28 | 模拟装置公司 | Die temperature sensors |
| CN103308178A (en) * | 2013-06-04 | 2013-09-18 | 电子科技大学 | Non-uniformity correction method for non-refrigeration infrared focal plane array |
| CN109282903A (en) * | 2017-07-20 | 2019-01-29 | 南京大学 | High-performance CMOS infrared microbolometer based on surface electromagnetic wave resonance |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110536085A (en) | 2019-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7787033B2 (en) | Apparatus and method for determining temperature of an active pixel imager and correcting temperature induced variations in an imager | |
| CN1917590B (en) | Method for fixed pattern noise reduction in infrared imaging cameras | |
| US8269864B2 (en) | Generating column offset corrections for image sensors | |
| US8199225B2 (en) | Generating column offset corrections for image sensors | |
| CN106092326B (en) | Compensation circuit and compensation method of infrared focal plane detector reading circuit | |
| CN114518175B (en) | Temperature correction method and related device for infrared thermal imaging image | |
| CN110536085B (en) | Reading circuit and image correction method | |
| US6359460B1 (en) | Semiconductor memory device | |
| CN101889869B (en) | Imaging apparatus and control method thereof | |
| US10848689B2 (en) | Infrared imaging element detecting temperature change, and infrared camera using the same element | |
| US9581500B2 (en) | Diagnosis of the defective state of a bolometric detection array | |
| US8624178B2 (en) | Method of correcting sensitivity and matrix image sensor for implementing this method | |
| CN110361094B (en) | Non-uniformity correction method and device for staring type focal plane array | |
| US8228403B2 (en) | Generating column offset corrections for image sensors | |
| CN109084899B (en) | Infrared focal plane detector non-uniform body output correction method and device | |
| US10866332B2 (en) | Imaging system, control method of imaging system, and storage medium | |
| JP2001245222A (en) | Semiconductor device and control method thereof | |
| CN110519537A (en) | A kind of image sensor array and its temperature drift compensation method | |
| CN110702231A (en) | Method for processing image | |
| JP2001174329A (en) | Temperature correcting method for variable resistance type infrared sensor element, variable resistance type infrared sensor with temperature correcting means, and image pickup device | |
| CN115144010A (en) | Synchronous calibration and correction method for image sensor non-uniformity and nonlinearity | |
| US10616514B2 (en) | Hybrid calibration method for row and column noise correction | |
| CN114240801A (en) | A method for non-uniform correction of remote sensing images | |
| CN120224037B (en) | Correction method and correction circuit module for pixel array driving state | |
| KR100776135B1 (en) | Automatic arm current compensation method of image sensor considering temperature and noise compensation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |