CN110398500A - Method and Experimental Device for Evaluating Wafer Cleaning Efficiency - Google Patents
Method and Experimental Device for Evaluating Wafer Cleaning Efficiency Download PDFInfo
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Abstract
本发明涉及一种用于评价晶片清洗效率的方法及实验装置,解决了现有方法准确性不高、存在系统误差和人为误差的问题。方法为将粘染物溶液滴入旋转中的晶片样品表面进行沾染实验,获得表面带有缺陷的沾染晶片样品;使用形貌表征仪器对沾染晶片样品表面进行形貌分析,获得该沾染晶片样品表面的清洗前缺陷数;将清洗液滴入旋转中的沾染晶片样品表面进行清洗实验,得到清洗晶片样品;使用形貌表征仪器对清洗晶片样品再次进行形貌分析,获得该沾染晶片样品表面的清洗后缺陷数;通过以下公式(A)进行清洗效率的计算,使用专用的实验装置进行沾染实验和清洗实验,具有测量方法简单可靠、准确性高、能为清洗液配方研究提供有力指导。
The invention relates to a method and an experimental device for evaluating wafer cleaning efficiency, which solves the problems of low accuracy, systematic error and human error in the existing method. The method is to drop the adhesive solution onto the surface of the rotating wafer sample to perform a contamination experiment, and obtain a sample of the contaminated wafer with defects on the surface; use a morphology characterization instrument to analyze the surface of the sample of the contaminated wafer, and obtain the surface of the sample of the contaminated wafer. The number of defects before cleaning; the cleaning solution was dropped into the surface of the contaminated wafer sample in the rotation for cleaning experiments to obtain the cleaned wafer sample; the morphology of the cleaned wafer sample was analyzed again using a morphology characterization instrument to obtain the surface of the contaminated wafer sample after cleaning The number of defects; the cleaning efficiency is calculated by the following formula (A), and the contamination experiment and cleaning experiment are carried out with a special experimental device. The measurement method is simple, reliable, and accurate, and can provide powerful guidance for the research on the cleaning solution formula.
Description
技术领域technical field
本发明涉及一种实验方法及设备,具体的说是一种评价晶片清洗效率的方法及实验装置。The invention relates to an experimental method and equipment, in particular to a method and an experimental device for evaluating wafer cleaning efficiency.
背景技术Background technique
随着半导体器件关键尺寸持续缩进,多数在前一技术节点不被重视的问题随即放大,其中包括小尺寸缺陷。“1/10定律”指出,最小线宽尺寸1/10以上的缺陷很大程度会引起器件的失效,因而缺陷的去除对提高半导体器件制造的良率尤为重要。As the critical dimensions of semiconductor devices continue to shrink, most of the problems that were not considered at the previous technology node have been enlarged, including small size defects. The "1/10 law" points out that defects above 1/10 of the minimum line width will largely cause device failure, so the removal of defects is particularly important to improve the yield of semiconductor device manufacturing.
湿法清洗是半导体器件制造工艺中的重要环节,其所使用的清洗液是减少缺陷的主要功能材料,其中可被去除的缺陷包括但不限于颗粒,有机物残留,金属残留等,这得益于清洗液对晶圆表面的轻微刻蚀及对上述污染物附着力的削弱。Wet cleaning is an important link in the manufacturing process of semiconductor devices. The cleaning solution used is the main functional material to reduce defects. The defects that can be removed include but are not limited to particles, organic residues, metal residues, etc., which benefit from The slight etching of the wafer surface by the cleaning solution and the weakening of the adhesion of the above-mentioned pollutants.
常规的清洗液配方研究中,一般使用在制造机台进行上机实验,但高成本的晶圆和大量使用的清洗液制约了该方法的灵活性,压缩了研究者的实验空间。一般的研究方法是在实验室中以静置浸泡的方法进行清洗液能力的研究,同时结合光学显微镜对小尺寸晶片进行缺陷数的统计。尽管该方法是筛选清洗液的一种最普遍的手段,但一方面其忽略了晶圆实际清洗过程中物理作用的影响,包括在酸槽式机台中液体的冲力,单片清洗机中自旋而提供的离心力,以及用自旋方式干燥的过程;另一方面,统计所用的光学显微镜方法的分辨率不佳,不能区分出更小尺寸的缺陷,更注重对缺陷平面尺寸上的观察分析,而忽略纵向维度与缺陷之间的关系造成误判,因而该方法会过多地引入系统误差和人为误差,对清洗液配方研究的指导意义不大。In the conventional cleaning solution formulation research, the manufacturing machine is generally used for on-machine experiments, but the high cost of wafers and the large amount of cleaning solution used restrict the flexibility of the method and compress the experimental space of researchers. The general research method is to study the ability of the cleaning solution in the laboratory by static immersion, and at the same time combine the optical microscope to count the number of defects on small-sized wafers. Although this method is one of the most common means of screening cleaning fluids, on the one hand, it ignores the influence of physical effects in the actual cleaning process of the wafer, including the impact of the liquid in the acid tank machine, the spin in the single-wafer cleaning machine, etc. And the centrifugal force provided, and the process of drying by spin; on the other hand, the resolution of the optical microscope method used for statistics is not good, and it cannot distinguish smaller-sized defects, and pays more attention to the observation and analysis of the defect plane size. However, ignoring the relationship between the longitudinal dimension and defects leads to misjudgment, so this method will introduce too many system errors and human errors, and has little guiding significance for the research on cleaning solution formulations.
另外,实验中的样品通常是小尺寸的晶片,约为正常晶片的十分之一大小,为了更好的进行实验,也需要配套使用相应的实验设备,不能仅仅将相关机台等设备同等比例缩小使用,如何设计一种适用于实验室的、适用于小尺寸的晶片的实验设备也是本领域技术人员需要研究的方向。In addition, the samples in the experiment are usually small-sized wafers, which are about one-tenth the size of normal wafers. In order to carry out experiments better, corresponding experimental equipment is also required. It is not possible to just use the same proportion of related machines and other equipment. How to design a kind of experimental equipment suitable for laboratories and suitable for small-sized wafers is also a direction that those skilled in the art need to study in order to reduce the use.
发明内容Contents of the invention
本发明的目的是为了解决上述技术问题,提供一种测量方法简单可靠、实验成本低、灵活性好、有效减少系统误差和人为误差、准确性高、能为清洗液配方研究的提供有力指导的评价晶片清洗效率的方法。The purpose of the present invention is to solve the above technical problems, to provide a simple and reliable measurement method, low experimental cost, good flexibility, effectively reduce system errors and human errors, high accuracy, and can provide powerful guidance for cleaning liquid formula research Method for evaluating wafer cleaning efficiency.
本发明还提供一种结构简单、易于制造、便于拆卸、实验条件可调、适用于上述方法的评价晶片清洗效率的实验装置。The present invention also provides an experimental device for evaluating wafer cleaning efficiency which is simple in structure, easy to manufacture, easy to disassemble, adjustable in experimental conditions and suitable for the above method.
本发明实验装置,包括一体式的清洗装置,其包括:The experimental device of the present invention comprises an integrated cleaning device, which includes:
真空旋转装置,用于真空吸附晶片样品并带动晶片样品旋转;Vacuum rotating device, used to vacuum absorb wafer samples and drive the wafer samples to rotate;
注射装置,用于将粘染物溶液或清洗液注射至晶片样品表面;Injection device for injecting the adhesive solution or cleaning solution onto the surface of the wafer sample;
和支架,其用于支撑所述真空旋转装置和所述注射装置。and a bracket for supporting the vacuum rotary device and the injection device.
还包括与所述清洗装置联用的用于分析清洗前后样品缺陷情况的分析装置,优选地,所述分析装置包括形貌表征仪器,更优选地,所述形貌表征仪器为原子力显微镜或白光干涉仪。It also includes an analysis device used in conjunction with the cleaning device to analyze sample defects before and after cleaning. Preferably, the analysis device includes a topography characterization instrument. More preferably, the topography characterization instrument is an atomic force microscope or a white light microscope. interferometer.
所述真空转旋装置包括表面开有真空槽的真空吸盘、控制旋转电机带动真空吸盘转动的旋转控制器、以及经真空气管与真空槽底部连通的真空泵。The vacuum rotary device includes a vacuum chuck with a vacuum groove on its surface, a rotation controller for controlling the rotary motor to drive the vacuum chuck to rotate, and a vacuum pump communicating with the bottom of the vacuum groove through a vacuum air pipe.
所述真空吸盘位于屏蔽罩中,所述屏蔽罩顶面设有玻璃罩。The vacuum chuck is located in the shielding case, and the top surface of the shielding case is provided with a glass cover.
所述注射装置包括注射器以及带动注射器的活塞杆运动的加压推动装置,所述注射器的针头为非金属材料。The injection device includes a syringe and a pressurizing and pushing device that drives the piston rod of the syringe to move, and the needle of the syringe is made of non-metallic material.
所述加压推动装置包括连接有步进控制器的丝杆式步进电机或伸缩式气缸,其中,所述丝杆式步进电机通过推杆带动推动顶片与所述活塞杆连接。The pressurizing and pushing device includes a screw-type stepping motor connected with a step controller or a telescopic cylinder, wherein the screw-type stepping motor is driven by a push rod to push the top piece to connect with the piston rod.
所述注射器的针头前端距离晶片样品表面的垂直距离为8~10mm,所述注射器的针头孔径为0.5~2mm。The vertical distance between the front end of the needle of the syringe and the surface of the wafer sample is 8-10 mm, and the diameter of the needle of the syringe is 0.5-2 mm.
一种使用上述的评价晶片清洗效率的实验装置评价晶片清洗效率的方法,包括以下步骤:A method for evaluating wafer cleaning efficiency using the above-mentioned experimental device for evaluating wafer cleaning efficiency, comprising the following steps:
(1)将粘染物溶液滴入旋转中的晶片样品表面进行沾染实验,获得表面带有缺陷的沾染晶片样品;(1) drip the sticky matter solution into the surface of the rotating wafer sample to carry out the contamination experiment, and obtain the contaminated wafer sample with defects on the surface;
(2)使用形貌表征仪器对沾染晶片样品表面进行形貌分析,获得该沾染晶片样品表面的清洗前缺陷数;(2) Use a morphology characterization instrument to perform morphology analysis on the surface of the contaminated wafer sample, and obtain the number of defects on the surface of the contaminated wafer sample before cleaning;
(3)将清洗液滴入旋转中的沾染晶片样品表面进行清洗实验,得到清洗晶片样品;(3) The cleaning liquid is dripped into the surface of the contaminated wafer sample in the rotation to perform a cleaning experiment to obtain a cleaned wafer sample;
(4)使用形貌表征仪器对清洗晶片样品再次进行形貌分析,获得该沾染晶片样品表面的清洗后缺陷数;(4) Use a morphology characterization instrument to analyze the morphology of the cleaned wafer sample again to obtain the number of defects on the surface of the contaminated wafer sample after cleaning;
(5)通过以下公式(A)进行清洗效率的计算:(5) Carry out the calculation of cleaning efficiency by following formula (A):
所述步骤(1)中的沾染实验和步骤(3)中的清洗实验中使用的是权利要求1-7任一项所述的实验装置,在步骤(1)的沾染实验中所述注射器内装有沾染物溶液,在步骤(3)的清洗实验中直接更换对应装有清洗液的注射器。In the contamination experiment in the step (1) and the cleaning experiment in the step (3), the experimental device described in any one of claims 1-7 is used, and in the contamination experiment of the step (1), the syringe is equipped with If there is a contaminant solution, directly replace the corresponding syringe containing the cleaning solution in the cleaning experiment of step (3).
步骤(1)的沾染实验和步骤(3)中的清洗实验中,控制粘染物溶液或清洗液的滴落速度为15~45ml/min,控制晶片样品或沾染晶片样品进行两段式旋转,先进行预旋转:控制转速为500~800rpm,时间为60~90s;再切换成高速旋转,转速为1000~2000rpm,时间为100~180s。In the contamination experiment of step (1) and the cleaning experiment in step (3), the dripping speed of the sticky substance solution or cleaning solution is controlled to be 15-45ml/min, and the wafer sample or the contaminated wafer sample is rotated in two stages. Perform pre-rotation: control the speed at 500-800rpm, and the time is 60-90s; then switch to high-speed rotation, the speed is 1000-2000rpm, and the time is 100-180s.
所述步骤(2)和步骤(4)中缺陷的判定方法为:通过形貌表征仪器对晶片样品表面的凸起进行测量,若凸起的纵向高度阈值大于2nm,则该凸起被记为缺陷,以此类推,计算该晶片样品上的缺陷总数即为缺陷数。The method for judging the defects in the steps (2) and (4) is: measure the protrusions on the surface of the wafer sample by a topography instrument, if the longitudinal height threshold of the protrusions is greater than 2nm, the protrusions are recorded as Defects, and so on, the total number of defects on the wafer sample is calculated as the number of defects.
所述形貌表征仪器为原子力显微镜或白光干涉仪,这两种仪器均可对样品进行形貌表征,通过拍摄或扫描形成3D图案,测量样品表面凸起的纵向高度阈值,其使用方法为现有技术,本领域技术人员可参见设备使用说明和相关文件资料。The shape characterization instrument is an atomic force microscope or a white light interferometer, both of which can characterize the shape of the sample, form a 3D pattern by shooting or scanning, and measure the longitudinal height threshold of the protrusions on the surface of the sample. Those skilled in the art can refer to the equipment instructions and related documents.
所述沾染物可以为硅纳米颗粒水性溶胶、絮状金属络合物分散溶液或有机分子水性溶液等;所述晶片可以为硅片、镀铜膜硅片或硅氧化物薄膜硅片等。The contaminants may be aqueous sols of silicon nanoparticles, dispersion solutions of flocculent metal complexes or aqueous solutions of organic molecules, etc.; the wafers may be silicon wafers, copper-plated silicon wafers, or silicon oxide thin film silicon wafers.
针对背景技术中存在的问题,发明人对现有的实验方法进行改进,为了尽可能模拟清洗液的使用状态,发明人先对晶片样品表面进行沾染实验,以人为制造出缺陷,然后再对晶片样品表面进行清洗实验,通过检测清洗前后缺陷数的变化,代入公式后可以计算得到该清洗液的清洗效率。在沾染实验和清洗实验中,不再以浸泡作为实验手段,而是通在滴注的方法将溶液加入到旋转的晶片样品表面,有效模拟出真实晶片样品的作业环境,减少实验方法带来的误差问题;进一步的,发明人发现,经沾染实验后,晶片样品表面附着的颗粒物(形成凸起)是影响晶片发挥功能作用、造成缺陷的主因,如硅氧化物颗粒,金属络合物絮状残留物,有机物团簇等,这些颗粒物(又称凸起) 通常具有一定的纵向高度阈值,不便于用平面尺寸进行定义(如直径或周长等),因此发明改变了缺陷的判定标准,通过形貌表征仪器对晶体表面进行纵向高度阈值的测量,从而获得多个凸起的纵向高度,结合本领域晶片的粗糙度要求,设定若凸起的纵向高度大于2nm,则该凸起被记为缺陷,以此类推,可计算得到该晶片样品上的缺陷总数即为缺陷数,清洗前和清洗后缺陷的判定方法是相同的。上述实验方法从实际工程应用中导致晶片表面产生缺陷的物质特点出发,从根本上降低了误差的可能,对清洗液的研发具有重大的指导意义。In view of the problems existing in the background technology, the inventor improved the existing experimental method. In order to simulate the use state of the cleaning solution as much as possible, the inventor first conducted a contamination experiment on the surface of the wafer sample to artificially create defects, and then cleaned the wafer. Cleaning experiments were carried out on the surface of the sample, and the cleaning efficiency of the cleaning solution can be calculated by detecting the change of the number of defects before and after cleaning, and substituting it into the formula. In the contamination experiment and cleaning experiment, soaking is no longer used as the experimental method, but the solution is added to the surface of the rotating wafer sample by dripping, which effectively simulates the working environment of the real wafer sample and reduces the experimental method. Error problem; further, the inventors found that after the contamination experiment, the particles attached to the surface of the wafer sample (forming bumps) are the main cause of affecting the function of the wafer and causing defects, such as silicon oxide particles, metal complex flocculent Residues, organic clusters, etc. These particles (also known as protrusions) usually have a certain vertical height threshold, which is not convenient to define with plane dimensions (such as diameter or circumference, etc.), so the invention changes the criteria for judging defects, by The morphology characterization instrument measures the longitudinal height threshold of the crystal surface to obtain the longitudinal heights of multiple protrusions. Combined with the roughness requirements of wafers in this field, it is set that if the longitudinal height of the protrusions is greater than 2nm, the protrusions will be recorded. is a defect, and so on, the total number of defects on the wafer sample can be calculated as the number of defects, and the determination method of defects before cleaning and after cleaning is the same. The above experimental method starts from the material characteristics that cause defects on the wafer surface in actual engineering applications, fundamentally reduces the possibility of errors, and has great guiding significance for the research and development of cleaning solutions.
进一步的,还可以对判定为缺陷的凸起的纵向高度阈值进行高低分级,分别获得清洗前后晶片样品中的各级别的缺陷数,并对应分别代入公式(1)中进行计算,可以进一步分析得到晶片样品表面各级别缺陷在清洗前后的缺陷改善状态。Further, it is also possible to classify the longitudinal height thresholds of the protrusions judged as defects, and obtain the number of defects of each level in the wafer sample before and after cleaning respectively, and respectively substitute them into the formula (1) for calculation, which can be further analyzed to obtain The defect improvement status of each level of defects on the wafer sample surface before and after cleaning.
所述沾染实验和清洗实验中,采用两段式旋转,先进行低速预旋转将滴入的液体均匀铺展在晶体样品表面,起到一定的浸润作用,随即切换至高速旋转状态,将液体快速地在晶体样品表面延展形成厚度均匀的薄膜,并将过量的液体从样品表面通过离心力驱离。In the above-mentioned contamination experiment and cleaning experiment, two-stage rotation was adopted, and the low-speed pre-rotation was carried out to spread the dripped liquid evenly on the surface of the crystal sample, which played a certain wetting effect, and then switched to the high-speed rotation state, and the liquid was quickly It spreads on the surface of the crystal sample to form a thin film with uniform thickness, and drives the excess liquid from the surface of the sample by centrifugal force.
本发明实验装置结构简极为简单,针对样品是小尺寸晶片的特点,一方面采用注射器代替喷嘴,利用加压推动装置带动注射器的活塞杆运动,可形成滴注或喷射水流,可灵活调节流速,解决了喷嘴无法适用于实验状态的问题;所述加压推动装置并不限定为何种形式,如丝杆式步进电机或伸缩式气缸或者是其它结构形式,可带动活塞杆向下运动即可,通过对应推动控制器控制活塞杆的运动速度;另一方面,本发明方法中涉及两次滴注过程,一次为沾染物溶液的滴注,一次为清洗液的滴注,这就涉及需要更换不同的溶液,为保证实验可靠,装有洁净液体的容器绝对不能引入污染物与杂质,现有液槽无法解决上述问题。为此,发明人使用了注射器,不仅结构简单、还可灵活的从支架上拆卸,通过更换装有对应溶液的注射器,就可方便的满足不同阶段的实验要求,避免两种溶液间的混合污染,提一步提高实验的可靠性和准确性。The structure of the experimental device of the present invention is simple and extremely simple. In view of the characteristics of the sample being a small-sized wafer, on the one hand, a syringe is used instead of a nozzle, and a pressurized pusher is used to drive the piston rod of the syringe to move, so that dripping or spraying water flow can be formed, and the flow rate can be flexibly adjusted. It solves the problem that the nozzle cannot be applied to the experimental state; the pressurization and pushing device is not limited to any form, such as a screw-type stepping motor or a telescopic cylinder or other structural forms, which can drive the piston rod to move downward. , by correspondingly pushing the controller to control the movement speed of the piston rod; on the other hand, the method of the present invention involves two dripping processes, one for the dripping of the contaminant solution and one for the cleaning solution, which involves the need to replace For different solutions, in order to ensure the reliability of the experiment, the container containing the clean liquid must not introduce pollutants and impurities. The existing liquid tank cannot solve the above problems. For this reason, the inventor used a syringe, which is not only simple in structure, but also can be flexibly disassembled from the bracket. By replacing the syringe with the corresponding solution, it can easily meet the experimental requirements of different stages and avoid mixing between the two solutions. Contamination, to further improve the reliability and accuracy of the experiment.
为模拟晶片实际工况下的旋转状态,使用了真空转旋装置,晶片样品置于表面开有真空槽的真空吸盘上,利用经真空气管与真空槽底部连通的真空泵对晶片样品进行真空吸附,通过旋转控制器控制旋转电机带动真空吸盘转动,最终带动晶片样品旋转,所述旋转控制器可根据需要控制真空吸盘的转速和不同转速下的转动时间,自动化程度高、非常灵活可靠。In order to simulate the rotation state of the wafer under actual working conditions, a vacuum rotation device is used. The wafer sample is placed on a vacuum chuck with a vacuum groove on the surface, and the wafer sample is vacuum adsorbed by a vacuum pump connected to the bottom of the vacuum groove through a vacuum tube. The rotation controller controls the rotating motor to drive the vacuum chuck to rotate, and finally drives the wafer sample to rotate. The rotation controller can control the rotation speed of the vacuum chuck and the rotation time at different speeds according to the needs, which is highly automated, flexible and reliable.
本发明实验方法简单可靠、灵活性好、有效减少系统误差和人为误差、准确性高、能为清洗液配方研究的提供有力指导,特别适用于集成电路的湿法清洗研究;本发明实验装置用于本发明实验,结构简单、易于制造、便于拆卸、实验条件灵活可调、适用于小尺寸晶片样品的实验。The experimental method of the present invention is simple and reliable, has good flexibility, effectively reduces system errors and human errors, has high accuracy, can provide powerful guidance for the research of cleaning liquid formula, and is especially suitable for the wet cleaning research of integrated circuits; the experimental device of the present invention is used In the experiment of the present invention, the structure is simple, easy to manufacture, easy to disassemble, flexible and adjustable experimental conditions, and suitable for experiments on small-sized wafer samples.
附图说明Description of drawings
图1为本发明实验装置的结构示意图。Fig. 1 is a structural schematic diagram of the experimental device of the present invention.
图2为本发明实验装置的侧视图。Fig. 2 is a side view of the experimental device of the present invention.
图3为真空吸盘的俯视图。Figure 3 is a top view of the vacuum chuck.
其中,1.支架,2.真空吸盘,3.旋转控制器,4.丝杆式步进电机,5.旋转电机,6.推动顶片,7.活塞杆,8.注射器,9.针头,10. 玻璃罩,11.屏蔽罩,12.真空气管,13.步进控制器,14.真空泵, 15.真空槽、16.晶片样品。Among them, 1. Bracket, 2. Vacuum suction cup, 3. Rotary controller, 4. Screw type stepper motor, 5. Rotary motor, 6. Push top piece, 7. Piston rod, 8. Syringe, 9. Needle, 10. Glass cover, 11. Shielding cover, 12. Vacuum tube, 13. Step controller, 14. Vacuum pump, 15. Vacuum tank, 16. Wafer sample.
具体实施方式Detailed ways
下面结合附图对本发明实验装置作进一步解释说明:Below in conjunction with accompanying drawing, experiment device of the present invention is further explained:
参见图1,包括真空旋转装置:用于真空吸附晶片样品并带动晶片样品旋转;注射装置:用于将粘染物溶液或清洗液注射至晶片样品表面;和支架1:用于安装真空旋转装置和注射装置。注射装置中带容纳腔的注射部分可拆卸,从而更换容纳的粘染物溶液或清洗液,注射部分具体可为注射器。Referring to Fig. 1, it includes a vacuum rotating device: used for vacuum adsorption of the wafer sample and driving the wafer sample to rotate; an injection device: used for injecting the adhesive solution or cleaning solution onto the surface of the wafer sample; and bracket 1: used for installing the vacuum rotating device and Injection device. The injection part with the containing cavity in the injection device is detachable, so as to replace the contained adhesive solution or cleaning solution, and the injection part can be specifically a syringe.
还包括与所述清洗装置联用的用于分析清洗前后样品缺陷情况的分析装置(图中未示出),优选地,所述分析装置包括形貌表征仪器,更优选地,所述形貌表征仪器为原子力显微镜或白光干涉仪。It also includes an analysis device (not shown) used in conjunction with the cleaning device to analyze sample defects before and after cleaning. Preferably, the analysis device includes a topography characterization instrument. More preferably, the topography The characterization instrument is an atomic force microscope or a white light interferometer.
所述真空转旋装置包括表面开有真空槽15的真空吸盘2、带动真空吸盘2转动的旋转电机5,连接旋转电机5的旋转控制器3、以及经真空气管12与真空槽15(本实施例为王字形真空槽)底部连通的真空泵14。所述真空吸盘2位于屏蔽罩11中,所述屏蔽罩顶面设有玻璃罩10。Described vacuum rotating device comprises the vacuum suction cup 2 that has vacuum groove 15 on the surface, the rotary motor 5 that drives vacuum suction cup 2 to rotate, the rotation controller 3 that connects rotary motor 5, and through vacuum air pipe 12 and vacuum groove 15 (this implementation Example is the vacuum pump 14 connected to the bottom of the king-shaped vacuum groove). The vacuum chuck 2 is located in the shielding case 11 , and the top surface of the shielding case is provided with a glass cover 10 .
参见图1和图2,所述注射装置包括位于真空吸盘2上方的注射器8以及带动注射器8的活塞杆7运动的加压推动装置,所述注射器 8的针头9为非金属材料,针头9前端距离晶片样品17表面的垂直距离为8-10mm,所述针头9孔径为0.5~2mm。Referring to Fig. 1 and Fig. 2, the injection device comprises a syringe 8 positioned above the vacuum chuck 2 and a pressure pushing device that drives the piston rod 7 of the syringe 8 to move, the needle 9 of the syringe 8 is made of non-metallic material, and the front end of the needle 9 is The vertical distance from the surface of the wafer sample 17 is 8-10 mm, and the aperture of the needle 9 is 0.5-2 mm.
所述加压推动装置为连接有步进控制器13的丝杆式步进电机或伸缩式气缸。本实施例中采用丝杆式步进电机4,可将电机的旋转运动转变为推杆的直线往复运动,由推杆带动推动顶片6将向下的作用力施加于注射器8的活塞杆7上,使活塞杆向下运动,从而使注射器内的液体由针头9向下滴出或流出。所述丝杆式步进电机4可控制其推杆向下移动的速度,从而控制液体由针头9向下滴出或流出的流速。The pressurizing and pushing device is a screw-type stepping motor or a telescopic cylinder connected with a stepping controller 13 . In this embodiment, a screw-type stepping motor 4 is adopted, which can convert the rotational motion of the motor into the linear reciprocating motion of the push rod, and the push rod drives the top piece 6 to apply the downward force to the piston rod 7 of the syringe 8 Up, the piston rod is moved downwards, so that the liquid in the syringe is dripped or flowed out from the needle 9 downwards. The screw-type stepping motor 4 can control the speed at which the push rod moves downward, thereby controlling the flow rate at which the liquid drips or flows out from the needle 9 downwards.
需要指出的是,为了避免酸碱化学品对金属材料的腐蚀,本发明中所使用的接触清洗液的材料均为有机聚合物,包括但不限于 HDPE、LDPE、PP等。It should be pointed out that, in order to avoid the corrosion of metal materials by acid-base chemicals, the materials used in the present invention in contact with the cleaning liquid are all organic polymers, including but not limited to HDPE, LDPE, PP, etc.
以粘染实验为例,介绍本发明装置的使用方法:Taking the sticking and dyeing experiment as an example, the usage method of the device of the present invention is introduced:
将粘染物溶液装入注射器8中,将注射器8装入支架1上,活塞杆7连接丝杆式步进电机;将晶片样品16置于真空吸盘2上,启动真空泵14,负压经真空气管12、真空槽15作用在晶片样品16上,晶片样品16被真空吸附在真空吸盘2上;启动旋转电机5带动真空吸盘2转动,通过旋转控制器3控制真空吸盘2转动的速度和时间;同时启动丝杆式步进电机4,将旋转力变为直径运动,经推动顶片6 带动活塞杆7向下运动,通过步进控制器13控制下行速度,进而达到控制注射针8的针头9中溶液的滴落速度的目的。沾染实验完成后,取出晶片进行下一步检测,同时控制丝杆式步进电机4反转带动推动顶片6回位,取下注射器8,更换装有清洗液的注射器8安装至支架 1上,为下一步的清洗实验作准备。所述清洗实验的操作过程同粘染实验。Put the sticky substance solution into the syringe 8, put the syringe 8 into the bracket 1, and connect the piston rod 7 to the screw type stepping motor; place the wafer sample 16 on the vacuum chuck 2, start the vacuum pump 14, and the negative pressure passes through the vacuum tube 12. The vacuum chamber 15 acts on the wafer sample 16, and the wafer sample 16 is vacuum-adsorbed on the vacuum chuck 2; start the rotating motor 5 to drive the vacuum chuck 2 to rotate, and control the speed and time of the rotation of the vacuum chuck 2 through the rotation controller 3; Start the screw-type stepping motor 4 to change the rotational force into a diameter movement, and push the top piece 6 to drive the piston rod 7 to move downward, and control the downward speed through the step controller 13, and then achieve the control of the needle 9 of the injection needle 8. The purpose of the dripping speed of the solution. After the contamination experiment is completed, take out the wafer for the next step of detection, and at the same time control the screw-type stepping motor 4 to reverse to drive the top sheet 6 back to its position, remove the syringe 8, replace the syringe 8 with cleaning solution and install it on the bracket 1 , in preparation for the next cleaning experiment. The operation process of the cleaning experiment is the same as that of the sticking experiment.
评价晶片清洗效率的方法实施例:The method embodiment of evaluating wafer cleaning efficiency:
(1)使用本发明实验装置将粘染物溶液滴入旋转中的晶片样品表面进行沾染实验,控制粘染物溶液或清洗液的滴落速度为 15~45ml/min,控制晶片样品或沾染晶片样品进行两段式旋转,先进行预旋转:控制转速为500~800rpm,时间为60~90s;再切换成高速旋转,转速为1000~2000rpm,时间为100~180s,获得表面带有缺陷的沾染晶片样品;(1) use the experimental device of the present invention to drip the sticky matter solution into the surface of the wafer sample in rotation and carry out the contamination experiment, control the dripping speed of the sticky matter solution or cleaning solution to be 15 ~ 45ml/min, control the wafer sample or stain the wafer sample to carry out Two-stage rotation, first pre-rotation: the control speed is 500-800rpm, the time is 60-90s; then switch to high-speed rotation, the speed is 1000-2000rpm, the time is 100-180s, and the contaminated wafer sample with surface defects is obtained ;
(2)使用原子力显微镜(购自布鲁克公司)对沾染晶片样品表面进行形貌分析,获得该沾染晶片样品表面的清洗前缺陷数;判定方法为:通过原子力显微镜对晶片样品表面的凸起进行测量,若凸起的纵向高度阈值大于2nm,则该凸起被记为缺陷,以此类推,计算该晶片样品上的缺陷总数即为清洗前缺陷数;(2) Use an atomic force microscope (purchased from Bruker) to analyze the morphology of the surface of the contaminated wafer sample, and obtain the number of defects on the surface of the contaminated wafer sample before cleaning; the determination method is: measure the protrusion on the surface of the wafer sample by the atomic force microscope , if the vertical height threshold of the protrusion is greater than 2nm, the protrusion is recorded as a defect, and so on, the total number of defects on the wafer sample is calculated as the number of defects before cleaning;
(3)使用本发明实验装置将清洗液滴入旋转中的沾染晶片样品表面进行清洗实验,得到清洗晶片样品;操作方法和控制条件同步骤 (1),区别在于更换使用的注射器8中装有清洗液;(3) use the experimental device of the present invention to drip the cleaning liquid into the surface of the contaminated wafer sample in the rotation and perform the cleaning experiment to obtain the cleaned wafer sample; the method of operation and control conditions are the same as in step (1), and the difference is that the injector 8 used for replacement is equipped with Washing fluid;
(4)使用原子力显微镜(购自布鲁克公司)再次对晶片样品再次进行形貌分析,获得该沾染晶片样品表面的清洗后缺陷数;判断方法同步骤(3),计算该清洗晶片样品上的缺陷总数即为清洗后缺陷数;(4) Use an atomic force microscope (purchased from Bruker) to analyze the morphology of the wafer sample again to obtain the number of defects on the surface of the contaminated wafer sample after cleaning; the judgment method is the same as in step (3), and calculate the defects on the cleaned wafer sample The total is the number of defects after cleaning;
(5)将获得的清洗前缺陷数和清洗后缺陷数代入以下公式(A)进行清洗效率的计算:(5) Substitute the number of defects before cleaning and the number of defects after cleaning into the following formula (A) to calculate the cleaning efficiency:
(A); (A);
(6)为了进一步分析得到晶片样品清洗前后的缺陷改善状态。还可以对判定为缺陷的凸起的纵向高度阈值进行高低分级,分别获得清洗前后晶片样品中的各级别的缺陷数,并对应分别代入公式(1) 中进行计算,可以获得不同级别下各级缺陷的清洗效率。本实施例中将缺陷的纵向高度阈值由低至高分为三级,分别为低级:大于2nm至小于5nm;中级:大于等于5nm至小于10nm;高级:大于等10nm。(6) In order to further analyze and obtain the defect improvement state of the wafer sample before and after cleaning. It is also possible to classify the longitudinal height thresholds of protrusions judged as defects, and obtain the number of defects of each level in the wafer sample before and after cleaning, and respectively substitute them into formula (1) for calculation, and obtain the Defect cleaning efficiency. In this embodiment, the longitudinal height thresholds of defects are divided into three levels from low to high, namely low level: greater than 2nm to less than 5nm; middle level: greater than or equal to 5nm to less than 10nm; high level: greater than or equal to 10nm.
所述原子力显微镜可对晶片样品表面进行扫描,获取图像数据后,分析软件可将图形转换成3D形式,然后统计表面上残留的沾污数量,并能够在软件中设定纵向高度阈值,筛选出高于某一纵向高度的凸起数量,还可以统计时在纵向阈值输入数据,筛选出对应尺寸的缺陷总数。原子力显微镜的纵向维度表征是通过探针对反射激光位置的改变而获得的。具体来说,探针以敲击模式在没有缺陷的样品表面进行探测,会由仪器拟合出一个基准面,即样品的水平基线,当探针敲击到缺陷位置时,基线位置将发生改变,此时即可从分析界面中得到该缺陷处与水平位置的纵向维度的尺寸变化,即可判断缺陷的纵向尺寸。The atomic force microscope can scan the surface of the wafer sample. After obtaining the image data, the analysis software can convert the image into a 3D form, and then count the amount of contamination remaining on the surface, and can set the vertical height threshold in the software to filter out The number of protrusions higher than a certain vertical height can also be counted by inputting data at the vertical threshold to filter out the total number of defects of the corresponding size. Longitudinal dimensional characterization in AFM is obtained by changing the position of the probe to reflected laser light. Specifically, the probe probes on the surface of the sample without defects in the knocking mode, and the instrument will fit a reference plane, that is, the horizontal baseline of the sample. When the probe hits the defect position, the position of the baseline will change , at this time, the size change of the longitudinal dimension between the defect location and the horizontal position can be obtained from the analysis interface, and the longitudinal dimension of the defect can be judged.
除了原子力显微镜,还可以白光干涉仪(购自布鲁克公司)对晶片样品表面进行拍摄,再进行图像分析,获得表面的3D形貌,以不同颜色表示凸起的高度,通过设定纵向高度阈值,筛选出高于某一纵向高度的凸起数量,还可以统计时在纵向阈值输入数据,筛选出对应尺寸的缺陷总数。白光干涉仪的纵向维度表征是使用在样品表面产生干涉条纹的可见光实现的。具体来说,从白光干涉仪对样品表面的显微图像中调节放大尺寸,将单条干涉条纹填充整个显微视野,根据光学信号的改变,仪器可分辨样品的水平基准面与表面凸起,并将在表面进行扫描,最终可将数个扫描区域进行粘合,形成大范围的显微图形,该图形可给出表面所有缺陷的数量。In addition to the atomic force microscope, a white light interferometer (purchased from Bruker) can also be used to photograph the surface of the wafer sample, and then analyze the image to obtain the 3D topography of the surface, and express the height of the protrusions in different colors. By setting the vertical height threshold, Screen out the number of protrusions higher than a certain vertical height, and you can also input data at the vertical threshold during statistics to filter out the total number of defects of the corresponding size. Longitudinal dimension characterization with white light interferometers is achieved using visible light that produces interference fringes on the sample surface. Specifically, the magnification size is adjusted from the microscopic image of the sample surface by the white light interferometer, and a single interference fringe fills the entire microscopic field of view. According to the change of the optical signal, the instrument can distinguish the horizontal reference plane and surface protrusion of the sample, and The surface will be scanned and eventually several scanned areas can be bonded to form a large-scale microscopic pattern that gives the number of all defects on the surface.
实验:experiment:
下面以硅纳米颗粒水性溶胶作为沾染物,镀铜膜硅片作为晶片,尺寸为2x2cm2,以采用上述评价方法和清洗液A(主要成分柠檬酸,水含量95%,购自和光纯药株式会社)清洗测得的清洗效率作为实施例,并在沾染后以同一清洗液A中浸泡,通过Compass缺陷分析工具分别统计清洗前后表面上尺寸大于0.1微米的缺陷数目,由此计算得到的清洗效率作为对比例,具体结果见表1。Below, the silicon nanoparticle aqueous sol is used as the contamination, and the copper - coated silicon wafer is used as the wafer. Company) cleaning efficiency measured as an example, and soaked in the same cleaning solution A after contamination, the number of defects with a size greater than 0.1 micron on the surface before and after cleaning were counted by the Compass defect analysis tool, and the cleaning efficiency calculated from this As a comparative example, the specific results are shown in Table 1.
表1对沾染物的清洗效率Table 1 Cleaning Efficiency of Contaminants
从表1中可以看出,实施例中使用了更为接近真实工况的实验方法,对缺陷检测的精确度更高、可靠性好。并且还能对比不同等级缺陷的清洗效果,对研究缺陷率控制要求较高的晶片清洗及清洗液配方具有更佳的实用意义。It can be seen from Table 1 that the experimental method closer to the real working conditions is used in the embodiment, and the accuracy of defect detection is higher and the reliability is better. And it can also compare the cleaning effects of different levels of defects, which has better practical significance for the study of wafer cleaning and cleaning solution formulations that require higher defect rate control.
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