CN110165076A - Organic LED display panel - Google Patents
Organic LED display panel Download PDFInfo
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- CN110165076A CN110165076A CN201910447320.4A CN201910447320A CN110165076A CN 110165076 A CN110165076 A CN 110165076A CN 201910447320 A CN201910447320 A CN 201910447320A CN 110165076 A CN110165076 A CN 110165076A
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- 239000011368 organic material Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 239000002131 composite material Substances 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000005538 encapsulation Methods 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 206010040844 Skin exfoliation Diseases 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
一种有机发光二极管显示面板,包括:复合基板,所述复合基板包括第一衬底、阻隔层、多个包含有机材料结构交织其内的无机层,以及包含有机材料结构交织其内的第二衬底；缓冲层,设置在所述复合基板之上；薄膜晶体管层,设置在所述缓冲层之上；有机发光二极管器件层,设置在所述薄膜晶体管层之上；以及封装层,设置在所述有机发光二极管器件层之上。
An organic light emitting diode display panel, comprising: a composite substrate, the composite substrate comprising a first substrate, a barrier layer, a plurality of inorganic layers containing organic material structures interwoven therein, and a second substrate containing organic material structures interwoven therein a substrate; a buffer layer, disposed on the composite substrate; a thin film transistor layer, disposed on the buffer layer; an organic light emitting diode device layer, disposed on the thin film transistor layer; and an encapsulation layer, disposed on the on the organic light emitting diode device layer.
Description
【技术领域】【Technical field】
本发明涉及显示技术领域,具体涉及有机发光二极管显示面板。The invention relates to the field of display technology, in particular to an organic light emitting diode display panel.
【背景技术】【Background technique】
水气(H2O)和氧气(O2)的有效阻隔对于有机发光二极管(organic light emittingdiode,OLED)显示面板而言十分重要,水和氧不仅会和显示面板中的发光层的有机化合物发生化学反应,也会腐蚀阴极材料中的金属,不仅降低发光效率,还会因发光材料变质而形成大量黑点,极大地影响OLED器件的寿命。The effective barrier of water vapor (H 2 O) and oxygen (O 2 ) is very important for organic light emitting diode (OLED) display panels. Water and oxygen will not only interact with organic compounds in the light-emitting layer of the display panel The chemical reaction will also corrode the metal in the cathode material, which not only reduces the luminous efficiency, but also forms a large number of black spots due to the deterioration of the luminescent material, which greatly affects the life of the OLED device.
因此,为了防止水气和氧气渗透到OLED器件,需要进行薄膜封装(thin-filmencapsulation,TFE)以保护OLED器件。Therefore, in order to prevent moisture and oxygen from penetrating into OLED devices, thin-film encapsulation (thin-filmencapsulation, TFE) is required to protect OLED devices.
然而,如图1所示,当前的OLED器件的背面设计,除聚酰亚胺(polyimide,PI)膜层10和30之外,仅包含数百纳米的阻隔层20和缓冲层40等膜层,而这些膜层当中的氮氧化物和硅氧化物存在一定数量的针孔,因此,水气或氧气容易通过这些针孔或其他微结构穿过几百纳米厚的无机膜层,到达薄膜晶体管层50和OLED器件层60,进而破坏发光层材料。However, as shown in FIG. 1, the backside design of current OLED devices only includes film layers such as a barrier layer 20 and a buffer layer 40 of several hundreds of nanometers in addition to polyimide (polyimide, PI) film layers 10 and 30. , and there are a certain number of pinholes in the nitrogen oxides and silicon oxides in these films, so water vapor or oxygen can easily pass through these pinholes or other microstructures to pass through the inorganic films with a thickness of several hundred nanometers and reach the thin film transistors. Layer 50 and OLED device layer 60, thereby destroying the light-emitting layer material.
如图2所示,通过水汽穿透率(water vapor transmission rate,WVTR)实验进一步证实习知的OLED器件的水汽透过率高达10-3数量级,远高于OLED器件对水汽阻隔所要求的10-6数量级。此外,考虑显示面板的可弯折性,以及由于基板膜层附近的阻隔层或缓冲层等脆性无机膜层,在显示面板弯折过程中承受较大的应力,不宜设计过厚,因此,这些只有数百纳米厚的无机膜层防止水氧入侵的能力难以简单通过提高膜层的厚度改善。As shown in Figure 2, the water vapor transmission rate (WVTR) experiment further proves that the known water vapor transmission rate of OLED devices is as high as 10 -3 , which is much higher than the 10 required by OLED devices for water vapor barrier. -6 orders of magnitude. In addition, considering the bendability of the display panel, and because the brittle inorganic film layers such as the barrier layer or the buffer layer near the substrate film layer bear relatively large stress during the bending process of the display panel, it is not appropriate to design too thick. Therefore, these The ability of an inorganic film layer with a thickness of only a few hundred nanometers to prevent water and oxygen intrusion is difficult to improve simply by increasing the thickness of the film layer.
另外,在习知的OLED显示面板中,由于无机物膜层和有机物膜层性质差异太大,导致无机物膜层和有机物膜层的界面结合性不佳而引起膜层间的剥离(peeling)时有发生。In addition, in the conventional OLED display panel, due to the large difference in properties between the inorganic film layer and the organic film layer, the interface bonding between the inorganic film layer and the organic film layer is not good, resulting in peeling between the film layers. happens sometimes.
【发明内容】【Content of invention】
本发明的目的在于提供一种有机发光二极管(organic light emitting diode,OLED)显示面板,其可提升OLED显示面板对于水汽和氧气的阻隔,并可以改善膜层间剥离的问题。此外,还可防止OLED显示面板在弯折时因应力过大而产生裂纹。The purpose of the present invention is to provide an organic light emitting diode (organic light emitting diode, OLED) display panel, which can improve the barrier of the OLED display panel to water vapor and oxygen, and can improve the problem of delamination between film layers. In addition, it can also prevent the OLED display panel from cracking due to excessive stress when it is bent.
为实现上述目的，本发明的有机发光二极管显示面板,包括:To achieve the above object, the organic light emitting diode display panel of the present invention includes:
复合基板,所述复合基板包括第一衬底、阻隔层、多个包含有机材料结构交织其内的无机层,以及包含有机材料结构交织其内的第二衬底；A composite substrate, the composite substrate comprising a first substrate, a barrier layer, a plurality of inorganic layers comprising an organic material structure interwoven therein, and a second substrate comprising an organic material structure interwoven therein;
设置在所述复合基板之上的缓冲层；a buffer layer disposed on the composite substrate;
设置在所述缓冲层之上的薄膜晶体管层；a thin film transistor layer disposed on the buffer layer;
设置在所述薄膜晶体管层之上的有机发光二极管器件层；以及an organic light emitting diode device layer disposed over the thin film transistor layer; and
设置在所述有机发光二极管器件层之上的封装层。An encapsulation layer disposed on the organic light emitting diode device layer.
较佳地,所述复合基板由下而上依序为第一衬底、阻隔层、包含第一有机材料结构交织其内的第一无机层、包含第二有机材料结构和第三有机材料结构交织其内的的第二无机层、以及包含第三有机材料结构交织其内的第二衬底；Preferably, the composite substrate includes, from bottom to top, a first substrate, a barrier layer, a first inorganic layer containing a first organic material structure interwoven therein, a second organic material structure and a third organic material structure a second inorganic layer interwoven therein, and a second substrate comprising a third organic material structure interwoven therein;
其中所述第三有机材料结构的上半部和下半部分别交织于所述第二衬底和所述第二无机层中。Wherein the upper half and the lower half of the third organic material structure are interwoven in the second substrate and the second inorganic layer respectively.
较佳地,所述第一衬底和所述第二衬底由聚酰亚胺所组成。Preferably, the first substrate and the second substrate are made of polyimide.
较佳地,在所述阻隔层由二氧化硅所组成。Preferably, the barrier layer is composed of silicon dioxide.
较佳地,所述阻隔层厚度为0.2-1μm。Preferably, the thickness of the barrier layer is 0.2-1 μm.
较佳地,所述无机层由硅氮化物所组成。Preferably, the inorganic layer is composed of silicon nitride.
较佳地,所述无机层以化学汽相沉积形成。Preferably, the inorganic layer is formed by chemical vapor deposition.
较佳地,所述有机材料结构为栅格状结构。Preferably, the organic material structure is a grid structure.
较佳地,所述栅格状的有机材料结构以光刻方式形成。Preferably, the grid-shaped organic material structure is formed by photolithography.
较佳地,在所述薄膜晶体管层由氧化铟锡所组成。Preferably, the thin film transistor layer is composed of indium tin oxide.
【附图说明】【Description of drawings】
图1为习知的有机发光二极管显示面板截面示意图；1 is a schematic cross-sectional view of a conventional OLED display panel;
图2为习知的有机发光二极管显示面板的水汽穿透率实验Figure 2 shows the water vapor transmission rate experiment of the conventional organic light emitting diode display panel
分析结果；analysis results;
图3为本发明实施例的有机发光二极管显示面板截面示意Figure 3 is a schematic cross-sectional view of an organic light emitting diode display panel according to an embodiment of the present invention
图；以及diagram; and
图4为本发明实施例的有机发光二极管显示面板的复合基FIG. 4 is a composite matrix of an organic light emitting diode display panel according to an embodiment of the present invention.
板制作流程示意图。Schematic diagram of the plate fabrication process.
【具体实施方式】【Detailed ways】
以下将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present application.
以下实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。The following description of the embodiments refers to the accompanying drawings to illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [upper], [lower], [front], [back], [left], [right], [inside], [outside], [side], etc., are only for reference The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention.
如图3所示,本发明实施例的有机发光二极管显示面板包括:As shown in FIG. 3, the organic light emitting diode display panel of the embodiment of the present invention includes:
复合基板,所述复合基板由下而上依序为第一衬底100、阻隔层200、包含第一有机材料结构301交织其内的第一无机层300、包含第二有机材料结构401和第三有机材料结构501交织其内的第二无机层400、包含第三有机材料结构501交织其内的第二衬底500,其中所述第三有机材料结构501的上半部和下半部分别交织于所述第二衬底500和所述第二无机层400中,所述第一有机材料结构301、第二有机材料结构401以及第三有机材料结构501皆为栅格状结构；Composite substrate, the composite substrate is sequentially from bottom to top a first substrate 100, a barrier layer 200, a first inorganic layer 300 including a first organic material structure 301 interwoven therein, a second organic material structure 401 and a second organic material structure 401 The second inorganic layer 400 in which the three organic material structures 501 are interwoven, and the second substrate 500 including the third organic material structures 501 intertwined in, wherein the upper half and the lower half of the third organic material structures 501 are respectively Interwoven in the second substrate 500 and the second inorganic layer 400, the first organic material structure 301, the second organic material structure 401 and the third organic material structure 501 are all grid-like structures;
设置在所述复合基板之上的缓冲层600；a buffer layer 600 disposed on the composite substrate;
设置在所述缓冲层600之上的薄膜晶体管层700；a thin film transistor layer 700 disposed on the buffer layer 600;
设置在所述薄膜晶体管层700之上的有机发光二极管器件层800；以及an organic light emitting diode device layer 800 disposed on the thin film transistor layer 700; and
设置在所述有机发光二极管器件层800之上的封装层900。The encapsulation layer 900 disposed on the organic light emitting diode device layer 800 .
如图4所示,本发明实施例的有机发光二极管显示面板的复合基板制作流程如下:As shown in FIG. 4, the manufacturing process of the composite substrate of the OLED display panel according to the embodiment of the present invention is as follows:
S1,首先将二氧化硅(SiO2)沉积在由聚酰亚胺所组成的第一衬底100上,形成厚度约为0.3-0.5μm的阻隔层200；S1, first deposit silicon dioxide (SiO 2 ) on the first substrate 100 made of polyimide to form a barrier layer 200 with a thickness of about 0.3-0.5 μm;
S2,然后在阻隔层200上涂布有机材料,并以光罩进行曝光以及通过后续显影等步骤形成具有栅格状结构的第一有机材料结构301；S2, then coating an organic material on the barrier layer 200, exposing with a photomask and forming a first organic material structure 301 with a grid-like structure through steps such as subsequent development;
S3,接着通过低温化学汽相沉积工艺将硅氮化物沉积在阻隔层200上以及具有栅格状结构的第一有机材料结构301中,直至厚度超越第一有机材料结构301的高度,形成第一无机层300；S3, then deposit silicon nitride on the barrier layer 200 and in the first organic material structure 301 having a grid-like structure by a low-temperature chemical vapor deposition process until the thickness exceeds the height of the first organic material structure 301, forming a first Inorganic layer 300;
S4,接着在第一无机层300上涂布有机材料,并以光罩进行曝光以及通过后续显影等步骤形成具有栅格状结构的第二有机材料结构401；S4, then coating an organic material on the first inorganic layer 300, exposing with a photomask and forming a second organic material structure 401 with a grid-like structure through steps such as subsequent development;
S5,然后通过低温化学汽相沉积工艺将硅氮化物沉积在第一无机层300上以及具有栅格状结构的第二有机材料结构401中,直至厚度超越第二有机材料结构401的高度,形成第二无机层400；S5, then deposit silicon nitride on the first inorganic layer 300 and in the second organic material structure 401 having a grid-like structure by a low-temperature chemical vapor deposition process until the thickness exceeds the height of the second organic material structure 401, forming the second inorganic layer 400;
S6,接着在第二无机层400上涂布有机材料,并以光罩进行曝光以及通过后续显影等步骤形成具有栅格状结构的第三有机材料结构501；S6, then coating an organic material on the second inorganic layer 400, exposing with a photomask, and forming a third organic material structure 501 with a grid-like structure through steps such as subsequent development;
S7,然后再次通过低温化学汽相沉积工艺将硅氮化物沉积在第二无机层400上以及具有栅格状结构的第三有机材料结构501的下半部中,形成加厚的第二无机层400；S7, and then again deposit silicon nitride on the second inorganic layer 400 and the lower half of the third organic material structure 501 having a grid-like structure through a low-temperature chemical vapor deposition process to form a thickened second inorganic layer 400;
S8,最后在加厚的第二无机层400上以及第三有机材料结构501的上半部中涂布聚酰亚胺,并经烘烤等程序形成第二衬底500。S8, finally coating polyimide on the thickened second inorganic layer 400 and the upper half of the third organic material structure 501, and forming the second substrate 500 through procedures such as baking.
由于本揭露的无机物硅氮化物通过镂空的栅格状结构直接和同样为无机物所组成的阻隔层200键合,改善膜层间剥离(peeling)的问题,加上第二衬底500的下半部同时和栅格状的第三有机材料结构501及加厚的第二无机层400键合,更可提升键合强度,因此有效降低膜层间的剥离风险。Since the inorganic silicon nitride disclosed in this disclosure is directly bonded to the barrier layer 200 which is also composed of inorganic substances through the hollow grid structure, the problem of peeling between film layers is improved, and the second substrate 500 The lower half is bonded to the grid-shaped third organic material structure 501 and the thickened second inorganic layer 400 at the same time, which can further improve the bonding strength, thus effectively reducing the risk of peeling between film layers.
此外,由硅氮化物所沉积而成的膜层结构致密性高,具有低的针孔发生率和非常好的水氧阻隔性能,因此硅氮化物和有机物形成的复合膜层可有效改善水气和氧气入侵OLED器件的问题。同时,具有栅格状有机物结构的膜层可将弯折区的应力传递到非弯折区而降低产生裂纹风险。In addition, the film layer deposited by silicon nitride has a high density structure, low pinhole occurrence rate and very good water and oxygen barrier performance. Therefore, the composite film layer formed by silicon nitride and organic matter can effectively improve the water vapor barrier. and the problem of oxygen intrusion into OLED devices. At the same time, the film layer with a grid-like organic structure can transfer the stress in the bending area to the non-bending area to reduce the risk of cracks.
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。In summary, although the present invention has been disclosed above with preferred embodiments, the above preferred embodiments are not intended to limit the application, and those skilled in the art can make various modifications without departing from the spirit and scope of the application. Therefore, the protection scope of the present application shall be determined by the scope defined in the claims.
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| PCT/CN2019/099375 WO2020237827A1 (en) | 2019-05-27 | 2019-08-06 | Organic light-emitting diode display panel |
| US16/612,381 US11374196B2 (en) | 2019-05-27 | 2019-08-06 | Organic light emitting diode display panel with organic material structure on upper and lower portions of an inorganic layer and lower portion of second substrate |
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