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CN119812024A - Contamination monitoring system and method for semiconductor manufacturing facilities - Google Patents

Contamination monitoring system and method for semiconductor manufacturing facilities Download PDF

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Publication number
CN119812024A
CN119812024A CN202311309782.2A CN202311309782A CN119812024A CN 119812024 A CN119812024 A CN 119812024A CN 202311309782 A CN202311309782 A CN 202311309782A CN 119812024 A CN119812024 A CN 119812024A
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China
Prior art keywords
pollutant
detection module
standard
sampling
exceeds
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CN202311309782.2A
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Chinese (zh)
Inventor
陈亚威
简志宏
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CSMC Technologies Fab2 Co Ltd
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CSMC Technologies Fab2 Co Ltd
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Priority to CN202311309782.2A priority Critical patent/CN119812024A/en
Publication of CN119812024A publication Critical patent/CN119812024A/en
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Abstract

本发明涉及一种半导体制造设施的污染监测系统及方法,所述方法包括:将至少一个区域的气体样本输送至第一污染物检测模块和第二污染物检测模块;所述第一污染物检测模块测量所述气体样本中与第一污染物的污染严重程度相关的参数,所述第二污染物检测模块测量所述气体样本中与第二污染物的污染严重程度相关的参数;所述第一污染物和所述第二污染物为不同种类的污染物;根据所述第一污染物检测模块和第二污染物检测模块的测量结果,在所述第一污染物超标时关停位于超标区域的机台,在所述第二污染物超标时关停位于超标区域的机台。本发明能够实现在污染物超标时对超标区域的机台自动停机,减少污染物超标导致的产品缺陷影响。

The present invention relates to a pollution monitoring system and method for semiconductor manufacturing facilities, the method comprising: delivering a gas sample of at least one area to a first pollutant detection module and a second pollutant detection module; the first pollutant detection module measures a parameter related to the pollution severity of a first pollutant in the gas sample, and the second pollutant detection module measures a parameter related to the pollution severity of a second pollutant in the gas sample; the first pollutant and the second pollutant are different types of pollutants; according to the measurement results of the first pollutant detection module and the second pollutant detection module, shutting down a machine located in an area where the first pollutant exceeds the standard, and shutting down a machine located in an area where the second pollutant exceeds the standard. The present invention can realize automatic shutdown of a machine in an area where the pollutant exceeds the standard, and reduce the impact of product defects caused by excessive pollutants.

Description

Pollution monitoring system and method for semiconductor manufacturing facility
Technical Field
The present application relates to semiconductor manufacturing, and more particularly, to a contamination monitoring system for a semiconductor manufacturing facility, and a contamination monitoring method for a semiconductor manufacturing facility.
Background
Semiconductor devices are extremely susceptible to various contaminants including particles, metal ions, chemicals, bacteria, etc. during manufacture.
Illustratively, particles in the air of a wafer factory (Fab) shop may be monitored by an air particle monitoring system, and ion concentrations (e.g., fluoride, chloride, sulfate, phosphate, nitrate, nitrite, bromide, ammonium ion concentrations, etc.) in the air of the Fab shop may be monitored by an air ion monitoring system.
The degree of automation of traditional air particle monitoring system and air ion monitoring system is lower, consequently when environmental parameter is unusual in the workshop, the condition that the board that is located this region should not be timely appears easily.
Disclosure of Invention
Accordingly, there is a need for a system and method for monitoring contamination of a semiconductor manufacturing facility that can timely cope with an abnormality in environmental parameters of a plant.
A pollution monitoring system of a semiconductor manufacturing facility comprises a sampling module, a first pollutant detection module, a second pollutant detection module and a control module, wherein the sampling module is used for collecting and obtaining a gas sample of at least one area in the semiconductor manufacturing facility, the first pollutant detection module is connected with the sampling module and used for measuring parameters related to the pollution severity of first pollutants on the gas sample, the second pollutant detection module is connected with the sampling module and used for measuring parameters related to the pollution severity of second pollutants on the gas sample, the control module is electrically connected with the first pollutant detection module and the second pollutant detection module and used for sending a shutdown signal of a machine table located in an exceeding area when the first pollutants exceed standards and sending a shutdown signal of a machine table located in the exceeding standard area when the second pollutants exceed standards, and the first pollutants and the second pollutants are different types of pollutants.
According to the pollution monitoring system of the semiconductor manufacturing facility, when the pollutants in a certain area of the semiconductor manufacturing facility exceed the standard, the shutdown signal of the machine in the area is sent, so that the machine in the exceeding area can be automatically shut down when the pollutants exceed the standard, and the influence of product defects caused by the exceeding of the pollutants is reduced.
In one embodiment, the sampling module comprises a plurality of sampling ports, a sampling tube, a first pollutant detection module and a second pollutant detection module, wherein each sampling port is arranged close to a corresponding machine, the sampling tube is connected with each sampling port, the first pollutant detection module and the second pollutant detection module are connected with the sampling tube, and the control module is used for sending a shutdown signal of the machine corresponding to the sampling port from which the first pollutant exceeds the standard when the first pollutant exceeds the standard, and sending a shutdown signal of the machine corresponding to the sampling port from which the second pollutant exceeds the standard when the second pollutant exceeds the standard.
In one embodiment, the first contaminant detection module is an air particle detection module.
In one embodiment, the second contaminant detection module is an air ion detection module.
In one embodiment, the first contaminant detection module includes a laser particle counter.
In one embodiment, the second contaminant detection module includes an ion spectrometer.
In one embodiment, the material of the sampling tube comprises a fusible polytetrafluoroethylene.
In one embodiment, the number of sampling tubes is greater than one, each sampling tube is connected to at least one of the sampling ports, and at least a portion of the sampling tubes are connected to both the first contaminant detection module and the second contaminant detection module.
In one embodiment, the number of each sampling port is bound with the number of the machine table adjacent to the sampling port, the control module is used for closing the corresponding bound machine table according to the number of the sampling port from which the first pollutant exceeds the standard when the first pollutant exceeds the standard, and closing the corresponding bound machine table according to the number of the sampling port from which the second pollutant exceeds the standard when the second pollutant exceeds the standard.
In one embodiment, the parameter related to the severity of contamination of the first contaminant is a particle count.
In one embodiment, the parameter related to the severity of contamination of the second contaminant is a concentration of contaminating ions.
A pollution monitoring method of a semiconductor manufacturing facility comprises the steps of collecting a gas sample of at least one area in the semiconductor manufacturing facility, measuring parameters related to the pollution severity of first pollutants in the gas sample, measuring parameters related to the pollution severity of second pollutants in the gas sample, sending a shutdown signal of a machine located in an out-of-standard area when the first pollutants are out-of-standard, and sending a shutdown signal of the machine located in the out-of-standard area when the second pollutants are out-of-standard, wherein the first pollutants and the second pollutants are different types of pollutants.
According to the pollution monitoring method of the semiconductor manufacturing facility, when the pollutants in a certain area of the semiconductor manufacturing facility exceed the standard, the machine in the area is automatically stopped, and the influence of product defects caused by the exceeding of the standard of the pollutants is reduced.
In one embodiment, the collecting the gas sample of at least one area in the semiconductor manufacturing facility comprises collecting the gas sample entering through each sampling port through a sampling pipe connected with a plurality of sampling ports, sending a shutdown signal of a machine in an out-of-standard area when the first pollutant exceeds the standard, and sending a shutdown signal of a machine in an out-of-standard area when the second pollutant exceeds the standard, wherein the sending the shutdown signal of the machine corresponding to the sampling port from which the out-of-standard first pollutant comes when the first pollutant exceeds the standard, and sending the shutdown signal of the machine corresponding to the sampling port from which the out-of-standard second pollutant comes when the second pollutant exceeds the standard.
In one embodiment, the method further comprises the step of virtually binding the number of each sampling port with the number of the machine station adjacent to the sampling port, wherein the machine station located in the out-of-standard area is shut down when the first pollutant exceeds the standard, and the machine station located in the out-of-standard area is shut down when the second pollutant exceeds the standard, and the corresponding bound machine station is shut down according to the number of the sampling port from which the out-of-standard gas sample comes.
In one embodiment, the parameter related to the severity of contamination of the first contaminant is a particle count.
In one embodiment, the parameter related to the severity of contamination of the second contaminant is a concentration of contaminating ions.
In one embodiment, the material of the sampling tube comprises a fusible polytetrafluoroethylene.
Drawings
For a better description and illustration of embodiments and/or examples of those inventions disclosed herein, reference may be made to one or more of the accompanying drawings. Additional details or examples used to describe the drawings should not be construed as limiting the scope of the disclosed invention, the presently described embodiments and/or examples, and any of the presently understood modes of carrying out the invention.
FIG. 1 is a block diagram of an exemplary prior art air particle monitoring system and air ion monitoring system;
FIG. 2 is a schematic diagram of a contamination monitoring system of a semiconductor manufacturing facility in accordance with one embodiment of the present application;
FIG. 3 is a graph of test data for air particle detection;
FIG. 4 is a graph of test data for air ion detection;
FIG. 5 is a flow chart of a method of contamination monitoring of a semiconductor manufacturing facility in accordance with one embodiment of the present application;
fig. 6 is a core workflow diagram of the PAMC system in one embodiment of the present application.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatially relative terms, such as "under," "below," "beneath," "under," "above," "over," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the related art, the exemplary air particle monitoring system 10 and air ion monitoring system 20 are independent of each other, as shown in FIG. 1. The sampling tube of the air particle monitoring system 10 and the sampling tube of the air ion monitoring system 20 are separately laid in the Fab shop. After the data of the particle monitoring module/ion monitoring module is output, whether the pollutant value exceeds the standard or not and the machine corresponding to the exceeding standard value are needed to be manually judged, and further the machine corresponding to the machine is informed to be controlled (such as shutdown and the like) in a manual mode. The degree of automation is low, and the test result cannot be linked with a production system (such as a Manufacturing Execution System (MES)) of the Fab, so that the feedback timeliness is poor.
The application provides a pollution monitoring system of a semiconductor manufacturing facility, which can stop a production machine in a corresponding area in the semiconductor manufacturing facility in time when workshop environment parameters are abnormal. The pollution monitoring system of the semiconductor manufacturing facility comprises a sampling module, a first pollutant detection module, a second pollutant detection module and a control module, wherein the sampling module is used for collecting and obtaining a gas sample of at least one area in the semiconductor manufacturing facility, the first pollutant detection module is connected with the sampling module and used for measuring parameters related to the pollution severity of first pollutants on the gas sample, the second pollutant detection module is connected with the sampling module and used for measuring parameters related to the pollution severity of second pollutants on the gas sample, the control module is electrically connected with the first pollutant detection module and the second pollutant detection module and used for sending a shutdown signal of a machine table located in an exceeding area when the first pollutants exceed standards and sending a shutdown signal of a machine table located in the exceeding area when the second pollutants exceed standards, and the first pollutants and the second pollutants are different pollutants.
The semiconductor manufacturing facility refers to a facility for manufacturing semiconductors. Illustratively, the semiconductor manufacturing facility is a semiconductor manufacturing plant that includes at least one tool. These stations may be, for example, photolithography stations, etching stations, deposition stations, etc. The manufacturing process of each machine may be the same or different, which is not limited in the embodiment of the present application.
The tool is located in each of the aforementioned regions in the semiconductor manufacturing facility. The collection of the gas sample of at least one area is to monitor the pollution condition of the environmental gas around the machine, so the collection of the gas sample of one area is to collect the gas sample which can represent the pollution condition of the environmental gas where one machine (or more than one machine) is located. Thus, the gas collected should be the gas near the corresponding machine. The distance between the collected position and the machine table can be set by technicians according to actual requirements.
The first pollutant exceeding means that the parameter related to the pollution severity of the first pollutant does not meet the first normal index, and the second pollutant exceeding means that the parameter related to the pollution severity of the second pollutant does not meet the second normal index. The first normal index and the second normal index may be indexes common to the industry, or may be an index manually determined by a technician.
According to the pollution monitoring system of the semiconductor manufacturing facility, when the pollutants in a certain area of the semiconductor manufacturing facility exceed the standard, the shutdown signal of the machine in the area is sent, so that the machine in the exceeding area can be automatically shut down when the pollutants exceed the standard, and the influence of product defects caused by the exceeding of the pollutants is reduced.
Fig. 2 is a schematic diagram of a contamination monitoring system of a semiconductor manufacturing facility in accordance with an embodiment of the present application. The contamination monitoring system of the semiconductor manufacturing facility includes a sampling port 112, a sampling tube 110, a first contaminant detection module 122, a second contaminant detection module 124, and a control module 130. The sampling tube 110 is connected to a sampling port 112. Each sampling port 112 is positioned adjacent to one of the stations (i.e., the station corresponding to the sampling port 112) such that a gas sample entering the sampling tube 110 through the sampling port 112 is representative of the contaminant conditions in the area of the corresponding station. A first contaminant detection module 122 is coupled to the sampling tube 110 for taking measurements of parameters related to the severity of the contamination of the first contaminant. A second contaminant detection module 124 is also coupled to the sampling tube 110 for taking measurements of parameters related to the severity of contamination of the second contaminant. The first and second contaminants are different kinds of contaminants, i.e. the first and second contaminants need to be measured using different kinds of measuring equipment. The control module 130 is electrically connected to the first contaminant detection module 122 and the second contaminant detection module 124, and is configured to send a shutdown signal of the machine corresponding to the sampling port 112 from which the first contaminant exceeds the standard when the first contaminant detected by the first contaminant detection module 122 exceeds the standard, and send a shutdown signal of the machine corresponding to the sampling port 112 from which the second contaminant exceeds the standard when the second contaminant detected by the second contaminant detection module 124 exceeds the standard. The control module 130 may access the production system of the workshop, so as to give a stop signal to the production system, and then the production system automatically sends a stop instruction to the corresponding production machine, so as to realize automatic stop.
The pollution monitoring system of the semiconductor manufacturing facility shown in fig. 2 shares one sampling tube 110 corresponding to the first and second pollutant detecting modules 122 and 124 of the same machine (i.e., the first and second pollutant detecting modules 122 and 124 detecting air at the same machine), so that the amount of work for constructing the sampling tube 110 during laying can be reduced.
In one embodiment of the present application, the control module 130 is further configured to integrate the measurement results of the first contaminant detection module 122 and the second contaminant detection module 124 and push the integrated measurement results to the responsible engineer. Illustratively, the engineer corresponds to a terminal device that is connected to the control module 130 by a wired or wireless means, and the control module 130 sends the measurement results of the first contaminant detection module 122 and the second contaminant detection module 124 to the terminal device by a wired or wireless means.
In one embodiment of the present application, a pollution monitoring system of a semiconductor manufacturing facility includes a plurality of sampling ports 112 and a plurality of sampling tubes 110, each sampling tube 110 being coupled to at least one sampling port 112. Each sampling port 112 is configured to correspond to an adjacent machine. The stop signal sent by the control module 130 is a stop signal of the machine corresponding to the sampling port 112. Some or all of the sampling tubes 110 are connected to both the first contaminant detection module 122 and the second contaminant detection module 124, i.e., the first contaminant detection module 122 and the second contaminant detection module 124 share the sampling tube 110 for air sampling.
Fig. 2 shows the sampling port 112, sampling tube 110, first contaminant detection module 122, and second contaminant detection module 124 corresponding to the 3 stations, respectively. In the embodiment shown in FIG. 2, each of the first and second contaminant detection modules 122, 124 is coupled to a respective one of the sampling tubes 110, and in other embodiments, each of the first and second contaminant detection modules 122, 124 may be coupled to more than one of the sampling tubes 110 and control which of the sampling tubes 110 is currently in communication with via a valve or similar mechanism. The number of the sampling port 112 and the number of the adjacent machine can be virtually bound, so that the machine (the number of the machine) to be shut down can be positioned according to the number of the sampling port 112 from which the air sample with the exceeding pollutant comes, and the positioned machine can be further controlled to be shut down.
In one embodiment of the application, the first contaminant detection module 122 is an air particle detection module and the second contaminant detection module 124 is an air ion detection module. The contamination monitoring system of the semiconductor manufacturing facility is PAMC (Particle Airborne Modular Contamination) systems. The first contaminant detection module 122 is configured to measure the number of particles in the air sample and the second contaminant detection module 124 is configured to measure the concentration of contaminant ions in the air sample.
In one embodiment of the application, the air particle detection module includes a laser particle counter. Further, the air particle detection module may also include a pump, sampling transducer, and the like. The pump is used to draw air in the vicinity of the respective sampling port 112 into the sampling tube 110 and to deliver it to a measurement device (e.g., a laser particle counter) in the air particle detection module.
In one embodiment of the application, the air ion detection module comprises an ion spectrometer. Further, the air ion detection module may also include a pump, sampling transducer, and the like. The pump is used to draw air in the vicinity of the respective sampling port 112 into the sampling tube 110 and to deliver it to a measurement device (e.g., ion spectrometer) in the air ion detection module. The first and second contaminant detection modules 122, 124 may share a pump.
In one embodiment of the present application, the material of the sampling tube 110 is PFA (Perfluoroalkoxy, fusible polytetrafluoroethylene). Because the air particle detection module and the air ion detection module share the sampling tube 110, the sampling tube 110 connected with the air particle detection module is made of PFA plastic, which is different from the exemplary scheme that the sampling tube is made of a fiber tube made of antistatic material.
In summary, in one embodiment of the present application, the PAMC system integrates the sampling modes of air particle and air ion detection by using the sampling tube 110 made of PFA material, so as to achieve seamless integration of the air particle and air ion monitoring function, and automatically send an instruction to the production system, and then automatically send an instruction to the production machine that is virtually bound in advance by the production system, so as to achieve automatic shutdown, and reduce the influence of particle/pollution ion exceeding on the product yield.
Taking the PAMC system shown in fig. 2 as an example, assuming that after the sampling port 112 near the machine 3 automatically samples, the gas sample reaches the corresponding first contaminant detection module 122 and the second contaminant detection module 124 through the sampling tube 110 connected to the sampling port 112, and after the air particle detection and the air ion detection are performed, the control module 130 sends a shutdown signal to the production system, and the production system automatically issues a shutdown command to the machine 3 to implement automatic shutdown. Fig. 3 is a graph of test data for air particle detection, and fig. 4 is a graph of test data for air ion detection. One of the data points in fig. 3 exceeds the control line (SPEC) and thus the corresponding machine is shut down. The core workflow of the PAMC system may refer to fig. 6:
S610, sampling.
The gas sample in the area of the equipment to be monitored in the semiconductor manufacturing facility is transported to the air particle detection module and the air ion detection module through the sampling port 112 and the sampling tube 110.
S622, the air particle detection module data exceeds the standard.
If the air particle detection result of the air particle detection module exceeds the control line, the process proceeds to step S632.
S632, locking the machine corresponding to the sampling.
According to the sampling port 112 from which the air sample exceeding the standard comes, the machine corresponding to the sampling port 112 is locked.
S642, the manufacturing execution system triggers a shutdown instruction.
The production system of the shop, specifically the Manufacturing Execution System (MES), triggers a shutdown instruction of the machine station locked in step S632.
S652, the integrated data is pushed to the responsible engineer.
In one embodiment of the present application, the engineer is correspondingly provided with a terminal device, and the terminal device is connected to the control module 130 in a wired or wireless manner, and the control module 130 sends the detection result of the first contaminant detection module 122 (in this embodiment, the air particle detection module) to the terminal device in a wired or wireless manner.
S624, the air ion detection module data exceeds standard.
If the air ion detection result of the air ion detection module exceeds the control line, step S634 is entered.
S634, locking the machine corresponding to the sampling.
According to the sampling port 112 from which the air sample exceeding the standard comes, the machine corresponding to the sampling port 112 is locked.
S644, the manufacturing execution system triggers a shutdown instruction.
The production system of the workshop, specifically the manufacturing execution system, triggers the shutdown instruction of the machine locked in step S634.
S654, the integrated data is pushed to the responsible engineer.
In one embodiment of the present application, the engineer is correspondingly provided with a terminal device, and the terminal device is connected to the control module 130 in a wired or wireless manner, and the control module 130 sends the detection result of the second contaminant detection module 124 (in this embodiment, the air ion detection module) to the terminal device in a wired or wireless manner.
The application correspondingly provides a pollution monitoring method of the semiconductor manufacturing facility. Fig. 5 is a flow chart of a method of monitoring contamination of a semiconductor manufacturing facility in accordance with one embodiment of the present application, comprising the steps of:
s510, collecting a gas sample of at least one region in the semiconductor manufacturing facility.
In one embodiment of the application, the gas sample entering each sampling port is collected by a sampling tube connected to a plurality of sampling ports. In the embodiment shown in fig. 2, a gas sample entering from sampling port 112 is transported to first and second contaminant detection modules 122, 124 through sampling tube 110 connected to sampling port 112. That is, the first contaminant detection module 122 and the second contaminant detection module 124 share one sampling tube 110, so as to integrate the sampling modes of air particle and air ion detection, and realize seamless integration of the air particle and air ion monitoring functions. Each sampling port 112 is positioned adjacent to one of the stations (i.e., the station corresponding to the sampling port 112) such that a gas sample entering the sampling tube 110 through the sampling port 112 is representative of the contaminant conditions in the area of the corresponding station.
S522, measuring a parameter related to the pollution severity of the first pollutant in the gas sample.
In one embodiment of the application, the parameter related to the severity of the contamination of the first contaminant in the gas sample is measured by the first contaminant detection module 122. In one embodiment of the application, the first contaminant detection module 122 is an air particle detection module for measuring the number of particles in an air sample.
In one embodiment of the application, the air particle detection module includes a laser particle counter. Further, the air particle detection module may also include a pump, sampling transducer, and the like. The pump is used to draw air in the vicinity of the respective sampling port 112 into the sampling tube 110 and to deliver it to a measurement device (e.g., a laser particle counter) in the air particle detection module.
S524, measuring a parameter related to the pollution severity of the second pollutant in the gas sample.
In one embodiment of the application, a parameter related to the severity of the contamination of the second contaminant in the gas sample is measured by the second contaminant detection module 124. In one embodiment of the application, the second contaminant detection module 124 is an air ion detection module for measuring the concentration of contaminant ions in an air sample.
In one embodiment of the application, the air ion detection module comprises an ion spectrometer. Further, the air ion detection module may also include a pump, sampling transducer, and the like. The pump is used to draw air in the vicinity of the respective sampling port 112 into the sampling tube 110 and to deliver it to a measurement device (e.g., ion spectrometer) in the air ion detection module.
S532, sending a shutdown signal of the machine station in the out-of-standard area when the first pollutant is out-of-standard.
In one embodiment of the present application, step S532 is to send a shutdown signal of the machine corresponding to the sampling port from which the out-of-standard first contaminant comes. In one embodiment of the application, the first contaminant exceeding means that the number of particles in the gas sample exceeds the control line.
And S534, sending a shutdown signal of the machine station in the out-of-standard area when the second pollutant is out-of-standard.
In one embodiment of the present application, step S534 is to send a shutdown signal of the machine corresponding to the sampling port from which the second contaminant exceeds the standard. In one embodiment of the application, the second contaminant overdetering refers to whether the concentration of contaminant ions in the gas sample exceeds a control line.
According to the pollution monitoring method of the semiconductor manufacturing facility, when the pollutants in a certain area of the semiconductor manufacturing facility exceed the standard, the machine in the area is automatically stopped, and the influence of product defects caused by the exceeding of the standard of the pollutants is reduced. Further, the first contaminant detection module 122 and the second contaminant detection module 124 corresponding to the same machine station share one sampling tube 110, so that the amount of work for laying the sampling tube 110 can be reduced. When the pollutant in a certain area of the workshop exceeds the standard, the machine in the area is automatically stopped, and the influence of product defects caused by the exceeding of the standard of the pollutant is reduced.
In an embodiment of the present application, step S532 and step S534 further include a step of integrating the data of the measurement results of the first contaminant detection module 122 and the second contaminant detection module 124 and pushing the integrated data to the responsible engineer.
In one embodiment of the present application, a pollution monitoring system of a semiconductor manufacturing facility includes a plurality of sampling ports 112 and a plurality of sampling tubes 110, each sampling tube 110 being coupled to at least one sampling port 112. In one embodiment of the present application, the pollution monitoring method of the semiconductor manufacturing facility further includes a step of virtually binding the number of each sampling port 112 with the number of the machine in the area where the sampling port 112 is located. Steps S532 and S534 are to shut down the machine virtually bound to the sample port 112 according to the number of the sample port from which the out-of-standard gas sample comes. That is, when the first contaminant detection module 122 and the second contaminant detection module 124 detect that the corresponding contaminants exceed the standard, the sampling port 112 from which the exceeding-standard gas sample comes is first located, and then the machine station virtually bound with the sampling port 112 is locked according to the serial number of the sampling port 112, so as to perform shutdown processing.
In one embodiment of the present application, the sampling tube 110 is made of a fusible polytetrafluoroethylene (Perfluoroalkoxy, PFA).
The pollution monitoring system of the semiconductor manufacturing facility and the pollution monitoring method of the semiconductor manufacturing facility belong to the same inventive concept, and the pollution monitoring system of the semiconductor manufacturing facility can be referred to for matters not specifically described in the pollution monitoring method of the semiconductor manufacturing facility.
It should be understood that, although the steps in the flowcharts of the present application are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in the flowcharts of this application may include a plurality of steps or stages that are not necessarily performed at the same time but may be performed at different times, and the order in which the steps or stages are performed is not necessarily sequential, but may be performed in alternate or alternating fashion with at least a portion of the steps or stages in other steps or steps.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, or the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory. By way of illustration, and not limitation, RAM can be in various forms such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), etc.
The application also provides a computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of the method according to any of the embodiments described above.
The application also provides a computer device comprising a memory and a processor, the memory having stored therein a computer program which when executed performs the steps of the method according to any of the preceding embodiments.
The application also provides a computer program product comprising a computer program which, when executed by a processor, implements the steps of a method according to any of the preceding embodiments.
In the description of the present specification, reference to the terms "some embodiments," "other embodiments," "desired embodiments," and the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (10)

1.一种半导体制造设施的污染监测系统,其特征在于,包括:1. A contamination monitoring system for a semiconductor manufacturing facility, comprising: 采样模块,用于采集得到半导体制造设施中至少一个区域的气体样本;A sampling module, used to collect gas samples from at least one area in a semiconductor manufacturing facility; 第一污染物检测模块,与所述采样模块连接,用于对所述气体样本进行与第一污染物的污染严重程度相关的参数的测量;a first pollutant detection module, connected to the sampling module, and configured to measure a parameter related to the pollution severity of the first pollutant on the gas sample; 第二污染物检测模块,与所述采样模块连接,用于对所述气体样本进行与第二污染物的污染严重程度相关的参数的测量;a second pollutant detection module, connected to the sampling module, and configured to measure parameters related to the pollution severity of the second pollutant on the gas sample; 控制模块,与所述第一污染物检测模块和第二污染物检测模块电性连接,用于在所述第一污染物超标时发送位于超标区域的机台的停机信号,以及在所述第二污染物超标时发送位于超标区域的机台的停机信号;a control module, electrically connected to the first pollutant detection module and the second pollutant detection module, configured to send a shutdown signal to a machine located in an exceeding area when the first pollutant exceeds the standard, and to send a shutdown signal to a machine located in an exceeding area when the second pollutant exceeds the standard; 其中,所述第一污染物和所述第二污染物为不同种类的污染物。Wherein, the first pollutant and the second pollutant are different types of pollutants. 2.根据权利要求1所述的半导体制造设施的污染监测系统,其特征在于,2. The contamination monitoring system for semiconductor manufacturing facilities according to claim 1, characterized in that: 所述采样模块包括:The sampling module comprises: 多个采样口,每个采样口靠近对应的机台设置;Multiple sampling ports, each of which is set close to the corresponding machine; 采样管,与各所述采样口连接;A sampling tube connected to each of the sampling ports; 其中,所述第一污染物检测模块和第二污染物检测模块与所述采样管连接;Wherein, the first pollutant detection module and the second pollutant detection module are connected to the sampling tube; 所述控制模块用于在所述第一污染物超标时,发送超标的第一污染物来自的采样口对应的机台的停机信号,以及在所述第二污染物超标时,发送超标的第二污染物来自的采样口对应的机台的停机信号。The control module is used to send a shutdown signal to the machine corresponding to the sampling port from which the first pollutant exceeds the standard when the first pollutant exceeds the standard, and to send a shutdown signal to the machine corresponding to the sampling port from which the second pollutant exceeds the standard when the second pollutant exceeds the standard. 3.根据权利要求2所述的半导体制造设施的污染监测系统,其特征在于,所述采样管的数量大于一,每根所述采样管至少连接一所述采样口,至少部分所述采样管既连接所述第一污染物检测模块、又连接所述第二污染物检测模块。3. The pollution monitoring system for semiconductor manufacturing facilities according to claim 2 is characterized in that the number of the sampling tubes is greater than one, each of the sampling tubes is connected to at least one sampling port, and at least some of the sampling tubes are connected to both the first pollutant detection module and the second pollutant detection module. 4.根据权利要求2所述的半导体制造设施的污染监测系统,其特征在于,每个采样口的编号与邻近采样口的机台的编号绑定;4. The pollution monitoring system for semiconductor manufacturing facilities according to claim 2, characterized in that the number of each sampling port is bound to the number of the machine adjacent to the sampling port; 所述控制模块用于在所述第一污染物超标时,根据超标的第一污染物来自的采样口的编号关停对应绑定的机台;The control module is used to shut down the corresponding bound machine according to the number of the sampling port from which the first pollutant that exceeds the standard comes when the first pollutant exceeds the standard; 以及在所述第二污染物超标时,根据超标的第二污染物来自的采样口的编号关停对应绑定的机台。And when the second pollutant exceeds the standard, the corresponding bound machine is shut down according to the number of the sampling port from which the second pollutant that exceeds the standard comes. 5.根据权利要求2所述的半导体制造设施的污染监测系统,其特征在于,所述采样管的材质包括可熔性聚四氟乙烯。5 . The pollution monitoring system for semiconductor manufacturing facilities according to claim 2 , wherein the sampling tube is made of fusible polytetrafluoroethylene. 6.根据权利要求1至5任一项所述的半导体制造设施的污染监测系统,其特征在于,所述第一污染物检测模块是空气颗粒检测模块,所述第二污染物检测模块是空气离子检测模块。6 . The pollution monitoring system for semiconductor manufacturing facilities according to claim 1 , wherein the first pollutant detection module is an air particle detection module, and the second pollutant detection module is an air ion detection module. 7.根据权利要求6所述的半导体制造设施的污染监测系统,其特征在于,所述第一污染物检测模块包括激光粒子计数器,所述第二污染物检测模块包括离子射谱仪。7 . The contamination monitoring system for semiconductor manufacturing facilities according to claim 6 , wherein the first contaminant detection module comprises a laser particle counter, and the second contaminant detection module comprises an ion spectrometer. 8.根据权利要求6所述的半导体制造设施的污染监测系统,其特征在于,所述与第一污染物的污染严重程度相关的参数是颗粒数,所述与第二污染物的污染严重程度相关的参数是污染离子浓度。8. The contamination monitoring system for semiconductor manufacturing facilities according to claim 6, wherein the parameter related to the contamination severity of the first contaminant is the particle count, and the parameter related to the contamination severity of the second contaminant is the contamination ion concentration. 9.一种半导体制造设施的污染监测方法,包括:9. A method for monitoring contamination in a semiconductor manufacturing facility, comprising: 采集半导体制造设施中至少一个区域的气体样本;collecting gas samples from at least one area of a semiconductor manufacturing facility; 测量所述气体样本中与第一污染物的污染严重程度相关的参数;measuring a parameter related to the severity of contamination of a first pollutant in the gas sample; 测量所述气体样本中与第二污染物的污染严重程度相关的参数;measuring a parameter related to the contamination severity of a second pollutant in the gas sample; 在所述第一污染物超标时发送位于超标区域的机台的停机信号,以及在所述第二污染物超标时发送位于超标区域的机台的停机信号;When the first pollutant exceeds the standard, a shutdown signal is sent to the machines located in the exceeding area; and when the second pollutant exceeds the standard, a shutdown signal is sent to the machines located in the exceeding area; 其中,所述第一污染物和所述第二污染物为不同种类的污染物。Wherein, the first pollutant and the second pollutant are different types of pollutants. 10.根据权利要求9所述的半导体制造设施的污染监测方法,其特征在于,所述采集半导体制造设施中至少一个区域的气体样本,包括:10. The method for monitoring pollution in a semiconductor manufacturing facility according to claim 9, wherein collecting a gas sample from at least one area in the semiconductor manufacturing facility comprises: 通过与多个采样口连接的采样管,采集各所述采样口进入的所述气体样本;Collect the gas samples entering from each sampling port through a sampling tube connected to the plurality of sampling ports; 所述在所述第一污染物超标时发送位于超标区域的机台的停机信号,以及在所述第二污染物超标时发送位于超标区域的机台的停机信号,包括:The step of sending a shutdown signal to a machine located in an area where the first pollutant exceeds the standard, and sending a shutdown signal to a machine located in an area where the second pollutant exceeds the standard, comprises: 在所述第一污染物超标时,发送超标的第一污染物来自的采样口对应的机台的停机信号,以及在所述第二污染物超标时,发送超标的第二污染物来自的采样口对应的机台的停机信号。When the first pollutant exceeds the standard, a shutdown signal is sent to the machine corresponding to the sampling port where the first pollutant exceeds the standard, and when the second pollutant exceeds the standard, a shutdown signal is sent to the machine corresponding to the sampling port where the second pollutant exceeds the standard.
CN202311309782.2A 2023-10-10 2023-10-10 Contamination monitoring system and method for semiconductor manufacturing facilities Pending CN119812024A (en)

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