CN119008816A - Micro display device and preparation method thereof - Google Patents
Micro display device and preparation method thereof Download PDFInfo
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Abstract
本发明公开了一种微显示器件及其制备方法。所述微显示器件包括多个微发光单元和与所述多个微发光单元一一对应的多个子像素开口；至少部分所述子像素开口内设置有光转换层，所述光转换层用于将所述微发光单元发出的光进行颜色转换；沿所述微显示器件的厚度方向，所述光转换层的正投影位于对应的所述微发光单元的正投影外；沿垂直于所述微显示器件的厚度方向的方向，所述光转换层的投影位于对应的所述微发光单元的正投影外。本发明能够提高微显示器件显示的稳定性。
The present invention discloses a micro display device and a method for preparing the same. The micro display device comprises a plurality of micro light-emitting units and a plurality of sub-pixel openings corresponding to the plurality of micro light-emitting units; a light conversion layer is disposed in at least some of the sub-pixel openings, and the light conversion layer is used to convert the color of the light emitted by the micro light-emitting units; along the thickness direction of the micro display device, the orthographic projection of the light conversion layer is located outside the orthographic projection of the corresponding micro light-emitting unit; along the direction perpendicular to the thickness direction of the micro display device, the projection of the light conversion layer is located outside the orthographic projection of the corresponding micro light-emitting unit. The present invention can improve the display stability of the micro display device.
Description
Technical Field
The invention relates to the technical field of display, in particular to a micro display device and a preparation method thereof.
Background
The Micro display device realizes light emitting display by a Micro display unit, for example MicroLED (Micro LIGHT EMITTING Diode). The micro display unit has advantages in terms of brightness, resolution, contrast, power consumption, lifetime, response speed, thermal stability, and the like, compared with the conventional LCD (Liquid CRYSTAL DISPLAY) and OLED (Organic LIGHT EMITTING Diode).
In the related art, a single color light emitting chip may be integrated as a light emitting source in a micro display device, and quantum dots are provided as a light conversion layer in the micro display device, thereby realizing full color display. However, since the quantum dots are fragile, the light emitting chip may seriously affect the stability of the quantum dots, so that the light emitting performance of the quantum dots is attenuated, and the stability of the display of the micro display device is affected.
Disclosure of Invention
The invention provides a micro display device and a preparation method thereof, which are used for improving the display stability of the micro display device.
According to an aspect of the present invention, there is provided a micro display device including a plurality of micro light emitting units and a plurality of sub-pixel openings in one-to-one correspondence with the plurality of micro light emitting units;
a light conversion layer is arranged in at least part of the sub-pixel openings, and the light conversion layer is used for performing color conversion on light emitted by the micro light emitting units;
The orthographic projection of the light conversion layer is positioned outside the orthographic projection of the corresponding micro light emitting unit along the thickness direction of the micro display device;
and along the direction perpendicular to the thickness direction of the micro display device, the projection of the light conversion layer is positioned outside the orthographic projection of the corresponding micro light emitting unit.
Optionally, each micro light emitting unit is correspondingly provided with a first light scattering layer and a second light scattering layer;
Along the thickness direction of the micro display device, the orthographic projection of the first light scattering layer coincides with the orthographic projection of the sub-pixel opening, and the orthographic projection of the second light scattering layer coincides with the orthographic projection of the micro light emitting unit; the first light scattering layer is positioned on one side of the sub-pixel opening, which is away from the light emitting surface of the micro display device, and the second light scattering layer is positioned on one side of the micro light emitting unit, which is close to the light emitting surface of the micro display device; the side wall of the first light scattering layer is connected with the side wall of the second light scattering layer and the corresponding side wall of the micro light emitting unit.
Optionally, in a thickness direction of the micro display device, the front projection of the micro light emitting unit surrounds the front projection of the corresponding sub-pixel opening.
Optionally, the second light scattering layer surrounds the sub-pixel opening to form a sidewall of the sub-pixel opening; the first light scattering layer forms a bottom wall of the sub-pixel opening.
Optionally, the micro display device further comprises a top reflective layer over the entire surface, the top reflective layer exposing the sub-pixel openings.
Optionally, the first light scattering layer is flush with a surface of the second light scattering layer, which is close to the light emitting surface of the micro display device;
the micro display device further includes a black bank layer forming the sub-pixel opening.
Optionally, a side reflection layer is disposed on a side of the micro light emitting unit and the corresponding second light scattering layer away from the sub-pixel opening.
Optionally, along a thickness direction of the micro display device, the orthographic projection of the micro light emitting unit is located at one side of the orthographic projection of the corresponding sub-pixel opening.
Optionally, the micro display device further includes a side reflection layer surrounding the micro light emitting unit, the first light scattering layer, and the second light scattering layer.
Optionally, along the thickness direction of the micro display device, the top surface of the second light scattering layer is located at one side of the top surface of the first light scattering layer close to the light emitting surface of the micro display device; the top surface of the first light scattering layer is used as the bottom wall of the sub-pixel opening; a part of side surfaces of the second light scattering layer and a part of side surfaces of the side reflecting layer are used as side walls of the sub-pixel openings;
The micro display device further includes a top reflection layer entirely covering and exposing the sub-pixel opening.
Optionally, the first light scattering layer is flush with a surface of the second light scattering layer, which is close to the light emitting surface of the micro display device;
the micro display device further includes a black bank layer forming the sub-pixel opening.
Optionally, the light conversion layer is disposed in part of the sub-pixel openings, and light scattering particles are disposed in the rest of the sub-pixel openings.
Optionally, the micro display device further comprises a substrate and a total reflection layer; the total reflection layer is arranged on one side of the micro light-emitting unit far away from the light-emitting surface of the micro display device; the substrate is arranged on one side of the total reflection layer far away from the micro display device.
According to another aspect of the present invention, there is provided a method of manufacturing a micro display device, comprising:
Forming a plurality of micro light emitting units and a plurality of sub-pixel openings corresponding to the micro light emitting units one by one;
Forming a light conversion layer in at least part of the sub-pixel openings; the front projection of the light conversion layer is positioned outside the front projection of the corresponding micro light emitting unit along the thickness direction of the micro display device; and along the direction perpendicular to the thickness direction of the micro display device, the projection of the light conversion layer is positioned outside the orthographic projection of the corresponding micro light emitting unit.
According to the technical scheme provided by the embodiment of the invention, the adopted micro display device comprises a plurality of micro light emitting units and a plurality of sub-pixel openings which are in one-to-one correspondence with the micro light emitting units; at least part of the sub-pixel openings are internally provided with a light conversion layer, and the light conversion layer is used for carrying out color conversion on light emitted by the micro-light-emitting units; the orthographic projection of the light conversion layer is positioned outside the orthographic projection of the corresponding micro light emitting unit along the thickness direction of the micro display device; the projection of the light conversion layer is located outside the orthographic projection of the corresponding micro light emitting unit along the direction perpendicular to the thickness direction of the micro display device. The light conversion layer and the corresponding micro light emitting units are staggered to a certain extent in the horizontal direction and the vertical direction, so that the emergent light of the micro light emitting units is prevented from directly entering the light conversion layer, the micro light emitting units are not in direct contact with the corresponding light conversion layer, the distance is long, the influence of high-brightness high heat of the micro light emitting units on the stability of the light conversion layer can be reduced, and the display stability of the micro display device can be improved.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a micro display device according to an embodiment of the present invention;
Fig. 2 is a top view of a micro display device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a micro display device according to another embodiment of the present invention;
FIG. 4 is a top view of yet another micro-display device according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a micro display device according to another embodiment of the present invention;
Fig. 6 is a schematic structural diagram of a micro display device according to another embodiment of the present invention;
FIG. 7 is a top view of yet another microdisplay device according to an embodiment of the invention;
Fig. 8 is a schematic structural diagram of a micro display device according to another embodiment of the present invention;
fig. 9 is a flowchart of a method for manufacturing a micro display device according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements that are expressly listed or inherent to such process, method, article, or apparatus.
As a problem that the light emitting chip affects the quantum dot in the related art micro display device, the inventors have found through a great deal of research that the reason for this technical problem is that: in the related art, the light emitting chip is in direct contact with the quantum dot, or the emergent light of the light emitting chip is directly incident into the quantum dot, or the distance between the light emitting chip and the quantum dot is too short. The light-emitting chip has the characteristic of high heat and high brightness when emitting light, and the high heat and high brightness of the light-emitting chip can seriously influence the stability of the quantum dot, so that the light-emitting performance of the quantum dot is attenuated.
Aiming at the technical problems, the invention provides the following solutions:
Fig. 1 is a schematic structural diagram of a micro display device according to an embodiment of the present invention, fig. 2 is a top view of the micro display device according to the embodiment of the present invention, fig. 2 corresponds to fig. 1, and reference is made to fig. 1 and fig. 2. The micro display device includes a plurality of micro light emitting units 13 and a plurality of sub-pixel openings Gap in one-to-one correspondence with the plurality of micro light emitting units; at least part of the sub-pixel openings Gap are internally provided with a light conversion layer QD, and the light conversion layer QD is used for performing color conversion on light emitted by the micro light emitting unit 13; along the thickness direction Y of the micro display device, the projection of the light conversion layer QD is located outside the orthographic projection of the corresponding micro light emitting unit 13; the projection of the light conversion layer QD is located outside the orthographic projection of the corresponding micro light emitting unit 13 in a direction perpendicular to the thickness direction Y of the micro display device.
Specifically, the micro light emitting unit 13 is MicroLED, for example, which may include an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, and the like. The micro light emitting unit 13 may emit light of a set color, for example, blue light. The light conversion layer QD is, for example, a quantum dot layer. The plurality of micro light emitting units in the micro display device may be divided into a plurality of first micro light emitting units, a plurality of second micro light emitting units, and a plurality of third micro light emitting units, and the different micro light emitting units are different in structure in the corresponding sub-pixel openings Gap, so that the light emitting colors of the different micro light emitting units are different. The first micro light emitting unit may be a micro light emitting unit emitting green light, and the light conversion layer QD in the first micro light emitting unit is a QDG converting blue light into green light; the second micro light emitting unit can be a micro light emitting unit emitting red light, and the light conversion layer QD in the second micro light emitting unit is QDR converted from blue light to red light; the third micro light emitting unit may be a micro light emitting unit emitting blue light, and a light conversion layer for color conversion may not be disposed in the sub-pixel opening corresponding to the third micro light emitting unit. Through the cooperation of the red, green and blue micro-light emitting units, for example, a red sub-pixel, a blue sub-pixel and a green sub-pixel can form a pixel, and the pixel can emit light with any color, so that the micro-display device can realize full-color display.
The shape of the sub-pixel opening Gap and the shape of the micro light emitting unit 13 may be set as needed, and are not limited to the rectangular shape shown in fig. 1 and 2. In addition, the sub-pixel openings Gap may be formed on related layers, which will be described later, and will not be described here.
In the related art, the light emitting chip is in direct contact with the quantum dot, or the outgoing light of the light emitting chip is directly incident into the quantum dot, or the distance between the light emitting chip and the quantum dot is too short. In the present embodiment, as shown in fig. 1 and 2, the orthographic projection of the light conversion layer QD is located outside the orthographic projection of the corresponding micro light emitting unit 13 along the thickness direction Y of the micro display device. That is, in the horizontal direction, the light conversion layer QD and the micro light emitting unit 13 do not overlap, and there is a certain misalignment. The horizontal direction is a direction in a plane formed by the first direction X and the second direction Z, and the first direction X, the second direction Z and the thickness direction Y are perpendicular to each other. The outgoing light of the micro light emitting unit 13 in the thickness direction of the micro display device is not directly incident on the light conversion layer QD. The orthographic projection of the light conversion layer QD is located outside the orthographic projection of the corresponding micro light emitting unit 13 in the direction perpendicular to the thickness direction Y, that is, the light conversion layer QD and the micro light emitting unit 13 are not overlapped in the perpendicular direction, and there is a certain dislocation. In other words, the light conversion layer QD and the corresponding micro light emitting unit 13 have certain dislocation in the horizontal direction and the vertical direction, so that the emergent light of the micro light emitting unit 13 is prevented from directly entering the light conversion layer QD, the micro light emitting unit 13 is prevented from directly contacting the corresponding light conversion layer QD, and the distance is long, so that the influence of the high brightness and high heat of the micro light emitting unit 13 on the stability of the light conversion layer QD can be reduced, and the display stability of the micro display device can be improved.
According to the technical scheme of the embodiment, the adopted micro display device comprises a plurality of micro light emitting units and a plurality of sub-pixel openings which are in one-to-one correspondence with the micro light emitting units; at least part of the sub-pixel openings are internally provided with a light conversion layer, and the light conversion layer is used for carrying out color conversion on light emitted by the micro-light-emitting units; the orthographic projection of the light conversion layer is positioned outside the orthographic projection of the corresponding micro light emitting unit along the thickness direction of the micro display device; the projection of the light conversion layer is located outside the orthographic projection of the corresponding micro light emitting unit along the direction perpendicular to the thickness direction of the micro display device. The light conversion layer and the corresponding micro light emitting units are staggered to a certain extent in the horizontal direction and the vertical direction, so that the emergent light of the micro light emitting units is prevented from directly entering the light conversion layer, the micro light emitting units are not in direct contact with the corresponding light conversion layer, the distance is long, the influence of high-brightness high heat of the micro light emitting units on the stability of the light conversion layer can be reduced, and the display stability of the micro display device can be improved.
In some embodiments, optionally, fig. 3 is a schematic structural diagram of another micro display device provided by an embodiment of the present invention, fig. 4 is a top view of another micro display device provided by an embodiment of the present invention, fig. 4 corresponds to fig. 3, and reference is made to fig. 3 and fig. 4. Each micro light emitting unit 13 is provided with a first light scattering layer 15 and a second light scattering layer 14, respectively. In the thickness direction Y of the micro display device, the front projection of the first light scattering layer 15 coincides with the front projection of the sub-pixel opening, and the front projection of the second light scattering layer 14 coincides with the front projection of the micro light emitting unit 13; wherein the first light scattering layer 15 is positioned at one side of the sub-pixel opening away from the light emitting surface of the micro display device, and the second light scattering layer 14 is positioned at one side of the micro light emitting unit 13 close to the light emitting surface of the micro display device; the side wall of the first light scattering layer 15 is connected to the side wall of the second light scattering layer 14 and the side wall of the micro light emitting unit 13.
Specifically, in the above-described embodiment, the light emitted from the micro light emitting unit 13 in the direction perpendicular to the thickness direction of the micro display device has a high energy, and this part of the light is not directly incident on the light conversion layer; however, some light having an angle with the thickness direction Y may be directly incident on the light conversion layer QD, and this part of light still has a higher intensity. In this embodiment, by providing the first light scattering layer 15 and the second light scattering layer 14, the light emitted by the micro light emitting unit 13 will enter the corresponding light conversion layer QD after being scattered by the first light scattering layer 15 and/or the second light scattering layer 14, and the light after multiple scattering will be uniformly dispersed to the whole light conversion layer QD, so as to further reduce the influence of the strong light emitted by the micro light emitting unit on the light conversion layer QD.
Further alternatively, in the above embodiment, the first light scattering layer 15 and the second light scattering layer 14 are integrally structured. The first light scattering layer 15 and the second light scattering layer 14 may be any film layer having a scattering function, and preferably may be a photoresist layer doped with organic or inorganic scattering particles.
Further alternatively, with continued reference to fig. 3 and 4, in the thickness direction Y of the micro display device, the front projection of the micro light emitting unit 13 surrounds the front projection of the corresponding sub-pixel opening Gap.
Specifically, in the present embodiment, the micro light emitting unit 13 has a hollow structure, and the shape of the micro light emitting unit 13 may be a ring shape, a rectangular shape, or any other polygonal shape. The sub-pixel openings are located at the corresponding hollow structure positions, that is, the light conversion layers QD are located at the corresponding hollow structure positions, so that the light emitted by the micro light emitting units 13 can be received by the light conversion layers QD from all directions, so that the light received by the light conversion layers QD is more uniform, and the light emitted by the sub-pixels is more uniform.
Further alternatively, in the thickness direction Y of the micro display device, the orthographic projection of the light conversion layer QD coincides with the orthographic projection of the corresponding sub-pixel opening Gap; the front projection of the sub-pixel opening Gap coincides with the front projection of the hollow structure of the corresponding micro light emitting unit 13.
Further alternatively, the distances between the sub-pixel opening and the edge of the micro light emitting unit 13 away from the sub-pixel opening are equal everywhere along the first direction X and the second direction Z, so that the intensity of the light emitted from the micro light emitting unit 13 towards the light converting layer QD from each direction is closer, that is, the light emitted from the micro light emitting unit 13 received by the light converting layer QD from each direction is more uniform, and the light emitted from the sub-pixel is more uniform.
Further alternatively, in some embodiments, a light conversion layer QD is disposed in part of the sub-pixel openings Gap, and a light scattering particle layer 19 is disposed in the remaining part of the sub-pixel openings.
Specifically, the light scattering particle layer 19 may be a photoresist doped with scattering particles, which may change a propagation path of light, thereby improving a light extraction rate. In the present embodiment, the light-emitting color at the light scattering particle layer 19 is the same as that of the micro light-emitting unit 13.
Further alternatively, with continued reference to fig. 3 and 4, the second light scattering layer 14 surrounds the sub-pixel opening Gap to form sidewalls of the sub-pixel opening Gap; the first light scattering layer 15 forms the bottom wall of the sub-pixel opening Gap.
Specifically, in the present embodiment, the sub-pixel opening Gap is formed on an integral structure composed of the first light scattering layer 15 and the second light scattering layer 14. The first light scattering layer 15 and the second light scattering layer 14 may be formed as an integral structure, and then the sub-pixel opening Gap may be etched. In this way, the side walls of the light-converting layer QD will be in contact with the second light-scattering layer 14 and the bottom wall of the light-converting layer QD will be in contact with the first light-scattering layer 15. That is, both the side wall and the bottom wall of the light conversion layer QD can receive light scattered from the light scattering layer, so that the light extraction efficiency can be improved.
Still further alternatively, with continued reference to fig. 3 and 4, the microdisplay device further includes a top reflective layer 17 over the entire surface, the top reflective layer 17 exposing the subpixel openings.
Specifically, the top reflection layer 17 covers the second light scattering layer 14 and may be in contact with the second light scattering layer 14. The top reflection layer 17 is, for example, a metal layer or a distributed bragg reflection layer, which may be formed of a metal having a high reflectance such as Al, ag, ti, mg or the like, and the distributed bragg reflection layer is also called a distributed bragg mirror (Distributed Bragg Reflector, DBR) which is a periodic structure composed of two materials having different refractive indices alternately laminated. By providing the top reflection layer 17 such that the light in the second light scattering layer 14 reaches the top surface of the second light scattering layer 14, the light is reflected by the top reflection layer 17 and finally reaches the light conversion layer QD, the light conversion efficiency of the light conversion layer QD can be further improved.
Further alternatively, with continued reference to fig. 3, the micro light emitting unit 13 and the corresponding second light scattering layer 14 are provided with a side reflection layer 16 on a side thereof remote from the sub-pixel opening Gap.
Specifically, the entire structure of the micro light emitting unit 13, the corresponding first light scattering layer 15, the corresponding second light scattering layer 14, and the structure (e.g., the light conversion layer QD) within the corresponding sub-pixel opening can be understood as one sub-pixel. In this embodiment, the side reflection layer 16 is disposed at the side wall of the sub-pixel, so as to isolate the optical crosstalk between different sub-pixels. That is, when the light emitted from the sub-pixel reaches the sidewall of the sub-pixel, the light is reflected by the side reflection layer 16 and does not enter other sub-pixels, so that the light crosstalk between different sub-pixels can be avoided. The side reflection layer 16 is, for example, a metal layer or a distributed bragg reflection layer, and the metal layer may be formed of a metal having high reflectivity such as Al, ag, ti, mg or the like.
Still further alternatively, with continued reference to fig. 3, the microdisplay device further includes a substrate 11 and a total reflection layer 12; the total reflection layer 12 is arranged on one side of the micro light emitting unit 13 away from the light emitting surface of the micro display device; the substrate 11 is arranged on the side of the total reflection layer 12 remote from the micro display device.
Specifically, the top surface of the micro light emitting unit 13 is a surface close to the light emitting surface of the micro display device, and the substrate 11 is disposed on one side of the bottom surface of the micro light emitting unit 13. The substrate 11 may function as a carrier for each film layer, and the substrate 11 may be a substrate including a pixel circuit. The total reflection layer 12 may be a metal layer or a bragg reflection layer, and has an effect of reflecting light emitted from the sub-pixels toward the light-emitting surface side of the micro display device, thereby further improving light-emitting efficiency.
In other embodiments, fig. 5 is a schematic structural diagram of still another micro display device according to an embodiment of the present invention, referring to fig. 5. The first light scattering layer 15 and the second light scattering layer 14 are flush with one side close to the light emitting surface of the micro display device; the micro display device further includes a black bank layer 18, the black bank layer 18 forming a sub-pixel opening Gap.
Specifically, in the present embodiment, the first light scattering layer 15 and the second light scattering layer 14 are flat surfaces on the side close to the light emitting surface of the micro display device, and the black bank layer 18 covers the second light scattering layer 14 over the whole surface. A whole layer of the black bank layer may be formed first, and then the sub-pixel opening Gap may be etched. The black bank layer 18 has a light absorption effect, and light emitted from the micro light emitting unit 13 is scattered by the second light scattering layer 14 and then is absorbed by the black bank layer 18 when being incident on the surface of the black bank layer 18, so that other sub-pixels are not affected, and thus, the problem of light crosstalk is not generated.
In other embodiments, a top reflective layer 17 is provided between the black bank layer 18 and the second light scattering layer 14.
A top reflection layer 17 is provided between the black bank layer 18 and the second light scattering layer 14, and a part of light emitted from the first light scattering layer 15 and the second light scattering layer 14 is reflected back to the first light scattering layer 15 and the second light scattering layer 14 through the top reflection layer 17, and a small amount of light passes through the top reflection layer 17 to enter the black bank layer 18 and is absorbed by the black bank layer 18, and the top reflection layer 17 and the black bank layer 18 cooperate to ensure optimal light emission efficiency while avoiding light crosstalk.
Further alternatively, as shown in fig. 5, a side reflection layer 16 is disposed on a side of the micro light emitting unit 13 and the corresponding second light scattering layer 14 away from the sub-pixel opening Gap.
Specifically, in the present embodiment, the side reflection layer 16 is disposed at the side wall of the sub-pixel, which can have the effect of isolating the optical crosstalk between different sub-pixels. That is, when the light emitted from the sub-pixel reaches the sidewall of the sub-pixel, the light is reflected by the side reflection layer 16 and does not enter other sub-pixels, so that the light crosstalk between different sub-pixels can be avoided. The side reflection layer 16 is, for example, a metal layer or a distributed bragg reflection layer, and the metal layer may be formed of a metal having high reflectivity such as Al, ag, ti, mg or the like.
Still further alternatively, with continued reference to fig. 5, the microdisplay device further includes a substrate 11 and a total reflection layer 12; the total reflection layer 12 is arranged on one side of the micro light emitting unit 13 away from the light emitting surface of the micro display device; the substrate 11 is arranged on the side of the total reflection layer 12 remote from the micro display device.
Specifically, the top surface of the micro light emitting unit 13 is a surface close to the light emitting surface of the micro display device, and the substrate 11 is disposed on one side of the bottom surface of the micro light emitting unit 13. The substrate 11 may function as a carrier for each film layer, and the substrate 11 may be a substrate including a pixel circuit. The total reflection layer 12 may be a metal layer or a bragg reflection layer, and has an effect of reflecting light emitted from the sub-pixels toward the light-emitting surface side of the micro display device, thereby further improving light-emitting efficiency.
In other embodiments, optionally, fig. 6 is a schematic structural diagram of another micro display device provided by an embodiment of the present invention, fig. 7 is a top view of another micro display device provided by an embodiment of the present invention, fig. 7 corresponds to fig. 6, and reference is made to fig. 6 and fig. 7. In the thickness direction Y of the micro display device, the front projection of the micro light emitting unit 13 is located at one side of the corresponding sub-pixel opening Gap.
Specifically, unlike the micro light emitting unit 13 shown in fig. 3 surrounding the sub-pixel opening Gap, the micro light emitting unit 13 in the present embodiment is located at one side of the sub-pixel opening Gap. By arranging the micro light emitting unit 13, the first light scattering layer 15, the second light scattering layer 14 and the light conversion layer or the light scattering particle layer in the sub-pixel opening Gap, the area of the sub-pixel is smaller, and more sub-pixels can be arranged under the condition that the area of the micro display device is the same, so that the micro display device has higher resolution.
Further alternatively, referring to fig. 6 and 7, the micro display device further includes a side reflection layer 16 surrounding the micro light emitting unit 13, the first light scattering layer 15, and the second light scattering layer 14.
Specifically, the micro light emitting unit 13, the corresponding first light scattering layer 15, the corresponding second light scattering layer 14, and the light conversion layer or the light scattering particle layer within the corresponding sub-pixel opening constitute one sub-pixel, and the side reflection layer 16 surrounds the sidewall of each sub-pixel. The side reflection layer 16 is disposed at the side wall of the sub-pixel, which can isolate the optical crosstalk between different sub-pixels. That is, when the light emitted from the sub-pixel reaches the sidewall of the sub-pixel, the light is reflected by the side reflection layer 16 and does not enter other sub-pixels, so that the light crosstalk between different sub-pixels can be avoided. The side reflection layer 16 is, for example, a metal layer or a distributed bragg reflection layer, and the metal layer may be formed of a metal having high reflectivity such as Al, ag, ti, mg or the like.
Further alternatively, referring to fig. 6, in the thickness direction Y of the micro display device, the top surface of the second light scattering layer 14 is located on the side of the top surface of the first light scattering layer 15 close to the light emitting surface of the micro display device; the top surface of the first light scattering layer 15 serves as the bottom wall of the sub-pixel opening Gap; a part of the side surface of the second light scattering layer 14 and a part of the side surface of the side reflection layer serve as side walls of the sub-pixel opening; the micro display device further includes a top reflection layer 17 covering and exposing the entire surface of the sub-pixel opening Gap of the micro display device.
Specifically, in the present embodiment, the side walls of the sub-pixel opening Gap are constituted by the side walls of the side reflection layer 16 and the second light scattering layer 14. That is, the side wall of the structure within the sub-pixel opening Gap, i.e., the light conversion layer QD or the light scattering particle layer 19, is in contact with the second light scattering layer 14. The side walls and the bottom wall of the light conversion layer QD can receive light scattered from the light scattering layer, so that the light extraction efficiency can be improved.
In addition, the top reflection layer 17 covers the second light scattering layer 14 and may be in contact with the second light scattering layer 14. The top reflection layer 17 is, for example, a metal layer or a distributed bragg reflection layer, and the metal layer may be formed of a metal with high reflectivity, such as Al, ag, ti, mg, and the distributed bragg reflection layer is also called a distributed bragg mirror, and is a periodic structure formed by alternately stacking two materials with different refractive indexes. By providing the top reflection layer 17 such that the light in the second light scattering layer 14 reaches the top surface of the second light scattering layer 14, the light is reflected by the top reflection layer 17 and finally reaches the light conversion layer QD, the light conversion efficiency of the light conversion layer QD can be further improved.
Still further alternatively, with continued reference to fig. 6, the microdisplay device further includes a substrate 11 and a total reflection layer 12; the total reflection layer 12 is arranged on one side of the micro light emitting unit 13 away from the light emitting surface of the micro display device; the substrate 11 is arranged on the side of the total reflection layer 12 remote from the micro display device.
Specifically, the top surface of the micro light emitting unit 13 is a surface close to the light emitting surface of the micro display device, and the substrate 11 is disposed on one side of the bottom surface of the micro light emitting unit 13. The substrate 11 may function as a carrier for each film layer, and the substrate 11 may be a substrate including a pixel circuit. The total reflection layer 12 may be a metal layer or a bragg reflection layer, and has an effect of reflecting light emitted from the sub-pixels toward the light-emitting surface side of the micro display device, thereby further improving light-emitting efficiency.
In other embodiments, optionally, as shown in fig. 8, fig. 8 is a schematic structural diagram of yet another micro display device according to an embodiment of the present invention. The first light scattering layer 15 is flush with one surface of the second light scattering layer 14, which is close to the light emitting surface of the micro display device; the micro display device further includes a black bank layer 18, the black bank layer 18 forming a sub-pixel opening Gap.
Specifically, in this embodiment, a whole layer of the black bank layer may be formed first, and then the sub-pixel opening Gap may be etched. The black bank layer 18 has a light absorption effect, and light emitted from the micro light emitting unit 13 is scattered by the second light scattering layer 14 and then is absorbed by the black bank layer 18 when being incident on the surface of the black bank layer 18, so that other sub-pixels are not affected, and thus, the problem of light crosstalk is not generated.
In other embodiments, a top reflective layer 17 is provided between the black bank layer 18 and the second light scattering layer 14.
Still further alternatively, with continued reference to fig. 8, the microdisplay device further includes a substrate 11 and a total reflection layer 12; the total reflection layer 12 is arranged on one side of the micro light emitting unit 13 away from the light emitting surface of the micro display device; the substrate 11 is arranged on the side of the total reflection layer 12 remote from the micro display device.
Specifically, the top surface of the micro light emitting unit 13 is a surface close to the light emitting surface of the micro display device, and the substrate 11 is disposed on one side of the bottom surface of the micro light emitting unit 13. The substrate 11 may function as a carrier for each film layer, and the substrate 11 may be a substrate including a pixel circuit. The total reflection layer 12 may be a metal layer or a bragg reflection layer, and has an effect of reflecting light emitted from the sub-pixels toward the light-emitting surface side of the micro display device, thereby further improving light-emitting efficiency.
The invention also provides a preparation method of the micro display device, as shown in fig. 9, fig. 9 is a flowchart of the preparation method of the micro display device provided by the embodiment of the invention. The preparation method of the micro display device comprises the following steps:
step S301, forming a plurality of micro light emitting units and a plurality of sub-pixel openings corresponding to the micro light emitting units one by one;
specifically, an epitaxial wafer may be provided first, and then patterned to form a plurality of micro light emitting units. The sub-pixel openings may be formed on other film layers.
Step S302, forming a light conversion layer in at least part of the sub-pixel openings; wherein, along the thickness direction of the micro display device, the orthographic projection of the light conversion layer is positioned outside the orthographic projection of the corresponding micro light emitting unit; the projection of the light conversion layer is located outside the orthographic projection of the corresponding micro light emitting unit along the direction perpendicular to the thickness direction of the micro display device.
In particular, the specific structure and operation principle of the sub-pixel opening and the micro light emitting unit may refer to the description of the present invention about the micro display device portion, and will not be described herein.
According to the micro display device prepared by the preparation method, the light conversion layer and the corresponding micro light emitting units are staggered to a certain extent in the horizontal direction and the vertical direction, so that the fact that outgoing light of the micro light emitting units cannot directly enter the light conversion layer is guaranteed, the micro light emitting units are not in direct contact with the corresponding light conversion layer, the distance is long, the influence of high-brightness high heat of the micro light emitting units on the stability of the light conversion layer can be reduced, and the display stability of the micro display device can be improved.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (14)
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