CN118248620A - LCOS structure manufacturing method - Google Patents
LCOS structure manufacturing method Download PDFInfo
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- CN118248620A CN118248620A CN202410250928.9A CN202410250928A CN118248620A CN 118248620 A CN118248620 A CN 118248620A CN 202410250928 A CN202410250928 A CN 202410250928A CN 118248620 A CN118248620 A CN 118248620A
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- lcos
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 131
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 230000000903 blocking effect Effects 0.000 claims abstract description 12
- 238000001312 dry etching Methods 0.000 claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000006117 anti-reflective coating Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000000227 grinding Methods 0.000 abstract description 8
- 239000012212 insulator Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a manufacturing method of LCOS structure, comprising providing a substrate, completing a driving circuit on the substrate and completing the manufacture of a dielectric layer on the driving circuit layer; depositing a metal serving as a metal reflecting layer on the dielectric layer; depositing a barrier protection layer on the metal layer; etching the barrier protection layer and the metal layer to realize patterning; depositing to form a covered oxide layer and an anti-reflection coating; adjusting etching parameters, and removing the oxide layer and the anti-reflection coating by adopting a pattern-free dry etching process without a mask layer; and removing the blocking protection layer by adopting a CMP process to expose the upper surface of the metal reflecting layer. According to the invention, the blocking protective layer is deposited on the metal reflecting layer, the anti-reflection coating is deposited above the covered oxide layer, the in-plane thickness difference is less than 1% by utilizing the flowability characteristic of the anti-reflection coating, and when CMP is performed, the metal reflecting layer can be protected, the grinding amount and the grinding time of the CMP are reduced, and the surface smoothness of the metal reflecting layer is ensured, so that LCOS with high-quality metal reflecting layer is manufactured.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of an LCOS structure.
Background
LCOS (Liquid Crystal on Silicon ) is a silicon-based micro display technology combining CMOS integrated circuit design process and liquid crystal packaging technology, as shown in FIG. 1, and has the structure that a driving panel (also called CMOS-LCD) is manufactured on a silicon wafer by utilizing a semiconductor manufacturing process, then the driving panel is ground on a transistor by a grinding technology, aluminum Al is plated as a reflecting mirror to form a CMOS substrate, then the CMOS substrate is attached to an upper glass panel containing an ITO transparent electrode, and then liquid crystal is injected for packaging test.
Wherein, aluminum Al is used as a light reflecting layer and an electrode layer at the same time, and a CMP process is required to ensure flatness and light reflectivity. The forming process is as shown in fig. 2 to 5, a metal layer is deposited and formed, and a photoetching process is carried out to form a reflecting layer; depositing to form a covered oxide layer; removing the oxide layer above the metal layer by using a CMP process; the reflective layer is planarized using a CMP process. The oxide layer CMP has poor in-plane uniformity (> 500A), and a certain thickness (THK 1) is left for ensuring that Al is not exposed in advance, and the Al CMP needs to grind the residual oxide layer (THK 1) and Al, so that the grinding amount is large and the time is long, which results in poor in-plane uniformity and small window.
Disclosure of Invention
In view of the above, the present invention provides a manufacturing method of an LCOS structure, which is used to optimize an Al CMP process, so as to shorten the polishing time and improve the uniformity in the metal reflection layer.
The invention provides a manufacturing method of an LCOS structure, which comprises the following steps:
Step one, providing a substrate, completing an internal driving circuit on the substrate, and completing the manufacture of a dielectric layer on a driving circuit layer;
depositing metal serving as a metal reflecting layer on the dielectric layer;
step three, depositing a blocking protective layer on the metal layer;
etching the barrier protection layer and the metal layer to realize patterning;
depositing a covered oxide layer and an anti-reflection coating layer positioned above the oxide layer;
Step six, adjusting etching parameters, and removing the oxide layer and the anti-reflection coating by adopting a non-pattern dry etching process without a mask layer;
And step seven, removing the blocking protection layer by adopting a CMP process, and exposing the upper surface of the metal reflecting layer.
Preferably, in the first step, the substrate is a silicon substrate.
Preferably, in the first step, the material of the dielectric layer is SiO2.
Preferably, in the second step, the material of the metal reflecting layer is Al.
Preferably, in the third step, the barrier protection layer is a SiN layer.
Preferably, the etching in the fourth step adopts a photoetching process.
Preferably, in the fifth step, the oxide layer fills the etched trench.
Preferably, the antireflective coating in step five has fluidity such that the in-plane thickness difference is less than 1%.
Preferably, in the sixth step, the adjusting etching parameters specifically includes: and adjusting the temperature and the radio frequency power to enable the etching selection ratio of the oxide layer to the anti-reflection coating to be 1:1.
Preferably, in the sixth step, the etching uses the hard layer as an etching stop layer.
The invention deposits the blocking protective layer on the metal reflecting layer, can protect the metal reflecting layer when carrying on CMP; the anti-reflection coating is deposited above the covered oxide layer, the fluidity characteristic of the anti-reflection coating is utilized, the in-plane thickness difference is smaller than 1%, no-pattern dry etching without a mask layer is adopted when the oxide layer and the anti-reflection coating are removed by etching, the in-plane thickness difference is smaller, and the grinding amount and the grinding time of CMP can be reduced when the CMP is carried out, so that the adverse effect of the CMP on the metal reflection layer is avoided, the surface smoothness of the metal reflection layer is ensured, and the LCOS with the high-quality metal reflection layer can be manufactured.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the present invention with reference to the accompanying drawings, in which:
FIG. 1 is a schematic illustration of an LCOS structure;
FIGS. 2-5 are schematic diagrams showing a process of forming a metal reflective layer of a LCOS structure;
FIG. 6 is a flow chart of a method of fabricating an LCOS structure according to an embodiment of the invention;
Fig. 7 to 10 are schematic structural diagrams of steps of a method for fabricating an LCOS structure according to an embodiment of the present invention.
Detailed Description
The present invention is described below based on examples, but the present invention is not limited to only these examples. In the following detailed description of the present invention, certain specific details are set forth in detail. The present invention will be fully understood by those skilled in the art without the details described herein. Well-known methods, procedures, flows, components and circuits have not been described in detail so as not to obscure the nature of the invention.
Moreover, those of ordinary skill in the art will appreciate that the drawings are provided herein for illustrative purposes and that the drawings are not necessarily drawn to scale.
Unless the context clearly requires otherwise, the words "comprise," "comprising," and the like throughout the application are to be construed as including but not being exclusive or exhaustive; that is, it is the meaning of "including but not limited to".
In the description of the present invention, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Furthermore, in the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
The ideal LCOS should be flat, smooth and have a high reflectivity, so that it can ensure good uniformity of alignment and thickness of the liquid crystal layer, and does not distort the light, and it is necessary that the metal reflective layer in the LCOS should be quite flat, so that the reflected light path can be precisely controlled, which is a critical factor for high-end applications such as projection televisions. Whereas the thickness difference between the middle and the edge of the metal reflective layer of the prior art is approximately 1000 angstroms. Accordingly, the present invention provides a new LCOS structure manufacturing method. The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings.
Fig. 6 is a flow chart of a method of fabricating an LCOS structure according to an embodiment of the present invention. As shown in fig. 6, the manufacturing method of the LCOS structure according to an embodiment of the present invention includes the following steps:
Step one, providing a substrate, completing an internal driving circuit on the substrate, and completing the manufacture of a dielectric layer on the driving circuit layer.
As a constituent material of the substrate, undoped single crystal silicon, impurity-doped single crystal silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI), germanium-on-insulator (GeOI), and the like can be used. By way of example, in embodiments of the present invention, the substrate is formed from a single crystal silicon material.
In the process of preparing the LCOS structure, the structures such as the internal driving circuit and the like are first completed on the silicon wafer substrate, and in the embodiment of the invention, the metal reflective layer is prepared after the dielectric layer is manufactured on the driving circuit layer. The dielectric layer is made of silicon dioxide SiO2.
And secondly, depositing metal serving as a metal reflecting layer on the dielectric layer.
In the embodiment of the present invention, the metal material used as the metal reflective layer is aluminum Al. Of course, other metals are also possible.
And thirdly, depositing a blocking protective layer on the metal layer.
In the embodiment of the invention, the blocking protection layer is a hard layer, and the hard layer is a silicon nitride SiN layer. The thickness of the steel is determined according to the actual situation requirement. The silicon nitride layer may function to stop the CMP step during CMP to better protect the underlying metal reflective layer.
And step four, etching the barrier protection layer and the metal layer to realize patterning.
In order to obtain the metal reflecting layer pattern, photoresist is coated on the silicon nitride layer, development and exposure are carried out, and then patterning is realized by a dry etching method or a wet etching method. As shown in fig. 7, the bottom of the trench etched by the pattern will expose the upper surface of the dielectric layer.
And fifthly, depositing and forming a covered oxide layer and an anti-reflection coating layer positioned above the oxide layer.
As shown in fig. 8, a thicker oxide layer is deposited on the barrier protection layer for the purpose of filling the gaps between the patterns on the metal reflective layer. Deposition using High Density Plasma (HDP) is possible and should ensure that the voids between the metal reflective layer patterns are sufficiently filled, i.e. that neither voids or the like are allowed therein and that a sufficient thickness is ensured.
An anti-reflective coating (BARC) is formed over the oxide layer with the purpose of planarizing the in-plane with a difference in-plane thickness of <1% taking advantage of BARC flowability characteristics.
And step six, adjusting etching parameters, and removing the oxide layer and the anti-reflection coating by adopting a non-pattern dry etching process without a mask layer.
In the embodiment of the invention, the etching parameter adjustment is specifically as follows: the temperature T and Radio Frequency (RF) power were adjusted to give an etch selectivity of 1:1 for the oxide layer and the anti-reflective coating. And the oxide layer and the anti-reflection coating are removed by a non-pattern Dry etching (mask Dry etching) process without a mask layer, so that the surface can be flattened. The uniformity in the plane of the mask Dry Etch is superior to that of Chemical Mechanical Polishing (CMP), the thickness difference in the plane is smaller, the plane can be smoother, and the Dry etching using the blocking protective layer as an etching stop layer is adopted.
And step seven, removing the blocking protection layer by adopting a CMP process, and exposing the upper surface of the metal reflecting layer.
In the embodiment of the invention, the metal reflecting layer with a flat surface can be obtained by polishing a small amount of SiN and Al, the defects caused by long-time CMP are overcome, and the appearance (profile) is better.
Of course, after the metal reflective layer is fabricated, the other processes of LCOS are performed, which will not be described herein.
In summary, the embodiment of the invention deposits the blocking protection layer on the metal reflecting layer, and can protect the metal reflecting layer during CMP; the anti-reflection coating is deposited above the covered oxide layer, the fluidity characteristic of the anti-reflection coating is utilized, the in-plane thickness difference is smaller than 1%, no-pattern dry etching without a mask layer is adopted when the oxide layer and the anti-reflection coating are removed by etching, the in-plane thickness difference is smaller, and the grinding amount and the grinding time of CMP can be reduced when the CMP is carried out, so that the adverse effect of the CMP on the metal reflection layer is avoided, the surface smoothness of the metal reflection layer is ensured, and the LCOS with the high-quality metal reflection layer can be manufactured.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, and various modifications and variations may be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method of manufacturing an LCOS structure, comprising the steps of:
Step one, providing a substrate, completing an internal driving circuit on the substrate, and completing the manufacture of a dielectric layer on a driving circuit layer;
depositing metal serving as a metal reflecting layer on the dielectric layer;
step three, depositing a blocking protective layer on the metal layer;
etching the barrier protection layer and the metal layer to realize patterning;
depositing a covered oxide layer and an anti-reflection coating layer positioned above the oxide layer;
Step six, adjusting etching parameters, and removing the oxide layer and the anti-reflection coating by adopting a non-pattern dry etching process without a mask layer;
And step seven, removing the blocking protection layer by adopting a CMP process, and exposing the upper surface of the metal reflecting layer.
2. The method of manufacturing an LCOS structure according to claim 1, wherein in step one, the substrate is a silicon substrate.
3. The method of fabricating an LCOS structure according to claim 1, wherein the material of the dielectric layer in step one is SiO2.
4. The method of fabricating an LCOS structure according to claim 1, wherein the material of the metal reflective layer in step two is Al.
5. The method of fabricating an LCOS structure according to claim 1, wherein in step three, the barrier protection layer is a SiN layer.
6. The method of fabricating an LCOS structure according to claim 1, wherein said etching in step four employs a photolithographic etching process.
7. The method of fabricating an LCOS structure according to claim 1, wherein in step five, the oxide layer fills the etched trench.
8. The method of manufacturing an LCOS structure according to claim 1, wherein said anti-reflective coating layer in step five has fluidity such that the in-plane thickness difference is less than 1%.
9. The method of fabricating an LCOS structure according to claim 1, wherein in step six, the etching parameter adjustment is specifically: and adjusting the temperature and the radio frequency power to enable the etching selection ratio of the oxide layer to the anti-reflection coating to be 1:1.
10. The method of fabricating an LCOS structure according to claim 1, wherein said etching in step six uses said hard layer as an etch stop layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410250928.9A CN118248620A (en) | 2024-03-05 | 2024-03-05 | LCOS structure manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410250928.9A CN118248620A (en) | 2024-03-05 | 2024-03-05 | LCOS structure manufacturing method |
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| CN118248620A true CN118248620A (en) | 2024-06-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202410250928.9A Pending CN118248620A (en) | 2024-03-05 | 2024-03-05 | LCOS structure manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI893929B (en) * | 2024-08-06 | 2025-08-11 | 力晶積成電子製造股份有限公司 | Method for forming semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI893929B (en) * | 2024-08-06 | 2025-08-11 | 力晶積成電子製造股份有限公司 | Method for forming semiconductor device |
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