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CN117903879A - 一种去除铜制程铝垫蚀刻后残留物的清洗液 - Google Patents

一种去除铜制程铝垫蚀刻后残留物的清洗液 Download PDF

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CN117903879A
CN117903879A CN202311665122.8A CN202311665122A CN117903879A CN 117903879 A CN117903879 A CN 117903879A CN 202311665122 A CN202311665122 A CN 202311665122A CN 117903879 A CN117903879 A CN 117903879A
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aluminum pad
cleaning
cleaning solution
copper process
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贺兆波
王亮
叶瑞
吴政
谢建
孟牧麟
陈小超
罗海燕
陈麒
徐子豪
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Hubei Xingfu Electronic Materials Co ltd
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Abstract

本发明提供了一种去除铜制程铝垫蚀刻后残留物的清洗液,适用于铜制程金属铝垫晶圆蚀刻后残留物的清洗。本发明解决了羟胺类清洗液价格昂贵,和半水性清洗液使用过程中腐蚀抑制剂析出问题,提供了一种经济、安全、环保的半水性清洗液组合物。清洗液主要成分为氟化氢铵、缓冲溶液、表面活性剂、有机溶剂以及水;反应活性物质为氟化氢铵,用于将难溶的蚀刻后残留物转化为易溶盐;缓冲溶液替代腐蚀抑制剂,通过pH控制金属及介质层的腐蚀速率;表面活性剂的使用可以提高清洗液的表面张力,便于润湿晶圆;有机溶剂和水作为主要溶剂,可以增强对蚀刻后残留物的清洗能力。且无IPA或NMP漂洗过程,后处理过程简单,节约时间成本和价格成本。

Description

一种去除铜制程铝垫蚀刻后残留物的清洗液
技术领域
本发明属于电子清洗剂技术领域,具体涉及一种去除铜制程铝垫蚀刻后残留物的清洗液。
背景技术
金属铝垫是铜制程晶圆金属互连工艺后与外界连接的最后一道工序,其在晶圆顶层金属层表面形成铝薄膜层,运用光刻和刻蚀工艺处理形成对外的连接线,作为封装的引线端和测试电性。金属铝垫蚀刻后,如果没有及时清洗干净,铝垫表面残留颗粒物会导致邻近的两个原本应该隔离的电路短接,从而导致整片晶圆失效,严重影响产品良率。清洗液应该化学兼容所有裸露出的晶圆制造材料,去除残留物的同时,必须严格控制金属和介质层材料的腐蚀速率。目前使用的配方型清洗剂一类是含羟胺,清洗效果好,但使用成本高,且原材料羟胺来源单一,有供应风险;另一类不含羟胺的清洗剂,在使用过程中,腐蚀抑制剂易析出,虽然腐蚀抑制剂降低了衬底金属蚀刻速率,但析出导致晶圆污染或缺陷。
发明内容
针对上述技术问题,本发明提供一种去除铜制程铝垫蚀刻后残留物的清洗液,能够有效去除铜制程铝垫蚀刻后残留物,对金属膜层和介质层材料蚀刻速率低,且制备和使用步骤简单,无中间漂洗过程,安全、环保、高效,节约时间成本,提高清洗效率。
为了实现上述目的,本发明提供一种去除铜制程铝垫蚀刻后残留物的清洗液,包括氟化氢铵,缓冲溶液,表面活性剂,有机溶剂,余量为水。
优选的,所述清洗液中氟化氢铵的质量分数为0.5-5%。
优选的,所述清洗液中缓冲溶液的质量分数为2-10%。
优选的,所述清洗液中表面活性剂的质量分数为0.01-0.5%。
优选的,所述清洗液中有机溶剂的质量分数为20-40%。
优选的,所述缓冲溶液为氨甘氨酸-盐酸、邻苯二甲酸-盐酸、甲酸-氢氧化钠、醋酸-醋酸铵、磷酸氢二钠-柠檬酸、柠檬酸-氢氧化钠-盐酸、磷酸-三乙胺中的任一种。
更进一步的,所述氨甘氨酸的浓度为1-200mmmol/L,盐酸的浓度为1-200mmol/L,邻苯二甲酸的浓度为1-200mmol/L,甲酸的浓度为1-200mmol/L,氢氧化钠的浓度为1-200mmol/L,醋酸的浓度为5-100mmol/L,醋酸铵的浓度为5-100mmol/L,磷酸氢二钠的浓度为5-100mmol/L,柠檬酸的浓度为5-100mmol/L,磷酸的浓度为5-100mmol/L,三乙胺的浓度为5-100mmol/L。
优选的,所述表面活性剂为月桂基磺化琥珀酸单酯二铵、单月桂基磷酸酯、单十二烷基磷酸酯铵、月桂醇醚磷酸酯、椰油酸单乙醇酰胺、月桂酰胺丙基氧化胺中的任一种。
优选的,所述有机溶剂为N, N-二甲基甲酰胺、N, N-二甲基乙酰胺、二甲基亚砜、1,3-二甲基-2-咪唑啉酮、六甲基磷酰三胺中的任一种。
优选的,所述水为25℃条件下,电阻率为18MΩ*cm的超纯水。
本发明的有益效果在于:
1、通过氟化氢铵解离出铵根离子和氟离子,与残留物进行螯合和配位化学反应,形成易溶螯合物和无机盐,通过有机溶剂和水的相似相溶作用原理,膨胀溶解后去除蚀刻后的残留物。
2、通过缓冲溶液控制pH,抑制对金属和介质层的腐蚀作用;表面活性剂,能通过增溶作用,增加非水溶性蚀刻后残留物溶解度,降低反应活化能。
3、利用氟化氢铵、缓冲溶液、表面活性剂、有机溶剂和水制备得到了一种清洗剂,可以取代羟胺类清洗剂和添加腐蚀抑制剂清洗剂的半水性组合物清洗剂,对铜制程铝垫蚀刻后残留物具有高效的清洗效果。
4、本发明制备的清洗剂铝、氮化钛膜层材料的腐蚀速率低。
5、不添加腐蚀抑制剂,避免了固体析出现象发生;且具有原料易得,制备简单等优点。
具体实施方式
下面结合具体实施例对本发明的技术方案做进一步解释说明,值得注意的是,下述实施例仅为本发明的优选实施例,而不应理解为对本发明的限制,本发明的保护范围应以权利要求记载的内容为准。本领域技术人员在没有做出创造性劳动而对本发明的技术方案做出的修改、替换均落入到本发明的保护范围之内。
下述实施例中采用的铝垫晶圆与CN101783293A、柳小敏等人的研究中(柳小敏,黄其煜,胡彬彬,等. 铝垫工艺晶须缺陷的改善及管控[J]. 中国科技论文在线精品论文,2018,11(10):1031-1038.)铝垫晶圆相同。
实施例1-14
按照表1中各种原料及配比配置清洗液:
表1 清洗液配方
上述缓冲溶液浓度均为20 mmol/L,按质量比混合而得。
对比例1
一种清洗液,配方同实施例6,仅将氟化氢铵替换为等量的氢氟酸。
对比例2
一种清洗液,配方同实施例6,仅不加入缓冲溶液。
对比例3
一种清洗液,配方同实施例6,仅加入4%的醋酸溶液(浓度为20mmol/L)作为缓冲溶液。
对比例4
一种清洗液,配方同实施例6,仅不加入表面活性剂。
对比例5
一种清洗液,配方同实施例6,仅不加入有机溶剂。
实施例15
取铜制程蚀刻后铝垫晶圆,利用上述实施例和对比例制备得到的清洗液采用喷淋法,在30-50℃下清洗3-5min,清洗结束后在室温下通过去离子水漂洗,再用高纯氮气吹干,利用表2中的标准对膜层的蚀刻速率和对铝垫晶圆的清洗效果进行评价,评价结果见表2:
表2 腐蚀情况和清洗效果的评价标准
表3 不同清洗液对铜质程铝垫晶圆的清洗效果
由表3可以看出,利用氟化氢铵、缓冲溶液、表面活性剂、有机溶剂和水制备得到的清洗液可以高效去除铜制程铝垫晶圆上的蚀刻后残余物,对金属膜层材料铝的蚀刻速率在5 Å/min以内,腐蚀速率合理,对氮化钛材料的蚀刻速率在5 Å/min以内,无腐蚀现象。

Claims (9)

1.一种去除铜制程铝垫蚀刻后残留物的清洗液,其特征在于:包括以下组分:氟化氢铵,缓冲溶液,表面活性剂,有机溶剂,余量为水。
2.根据权利要求1所述的一种去除铜制程铝垫蚀刻后残留物的清洗液,其特征在于:所述清洗液中氟化氢铵的质量分数为0.5-5%。
3.根据权利要求1所述的一种去除铜制程铝垫蚀刻后残留物的清洗液,其特征在于:所述清洗液中缓冲溶液的质量分数为2-10%。
4.根据权利要求1所述的一种去除铜制程铝垫蚀刻后残留物的清洗液,其特征在于:所述清洗液中表面活性剂的质量分数为0.01-0.5%。
5.根据权利要求1所述的一种去除铜制程铝垫蚀刻后残留物的清洗液,其特征在于:所述清洗液中有机溶剂的质量分数为20-40%。
6.根据权利要求1所述的一种去除铜制程铝垫蚀刻后残留物的清洗液,其特征在于:所述缓冲溶液为氨甘氨酸-盐酸、邻苯二甲酸-盐酸、甲酸-氢氧化钠、醋酸-醋酸铵、磷酸氢二钠-柠檬酸、柠檬酸-氢氧化钠-盐酸、磷酸-三乙胺中的任一种。
7.根据权利要求1所述的一种去除铜制程铝垫蚀刻后残留物的清洗液,其特征在于:所述表面活性剂为月桂基磺化琥珀酸单酯二铵、单月桂基磷酸酯、单十二烷基磷酸酯铵、月桂醇醚磷酸酯、椰油酸单乙醇酰胺、月桂酰胺丙基氧化胺中的任一种。
8. 根据权利要求1所述的一种去除铜制程铝垫蚀刻后残留物的清洗液,其特征在于:所述有机溶剂为N, N-二甲基甲酰胺、N, N-二甲基乙酰胺、二甲基亚砜、1,3-二甲基-2-咪唑啉酮、六甲基磷酰三胺中的任一种。
9.根据权利要求1所述的一种去除铜制程铝垫蚀刻后残留物的清洗液,其特征在于:所述水为25℃条件下,电阻率为18MΩ*cm的超纯水。
CN202311665122.8A 2023-12-06 2023-12-06 一种去除铜制程铝垫蚀刻后残留物的清洗液 Pending CN117903879A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119410418A (zh) * 2024-09-30 2025-02-11 湖北兴福电子材料股份有限公司 一种去除聚酰亚胺蚀刻后残留物的清洗液

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119410418A (zh) * 2024-09-30 2025-02-11 湖北兴福电子材料股份有限公司 一种去除聚酰亚胺蚀刻后残留物的清洗液

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