CN116288168A - Evaporation method and evaporation device - Google Patents
Evaporation method and evaporation device Download PDFInfo
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- CN116288168A CN116288168A CN202310075152.7A CN202310075152A CN116288168A CN 116288168 A CN116288168 A CN 116288168A CN 202310075152 A CN202310075152 A CN 202310075152A CN 116288168 A CN116288168 A CN 116288168A
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- 238000001704 evaporation Methods 0.000 title claims abstract description 225
- 230000008020 evaporation Effects 0.000 title claims abstract description 202
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 239000011248 coating agent Substances 0.000 claims abstract description 84
- 238000000576 coating method Methods 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
- 238000007740 vapor deposition Methods 0.000 claims abstract description 32
- 239000007921 spray Substances 0.000 claims description 22
- 238000007747 plating Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 15
- 239000011247 coating layer Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides an evaporation method and an evaporation device, and relates to the technical field of vacuum evaporation coating. The evaporation method comprises the following steps: s1: arranging a plurality of evaporation sources in a row, and respectively adjusting the distance between each evaporation source and a substrate; when the coating materials in each evaporation source form corresponding coating on the substrate, the adjacent two coating have an overlapping area; s2: heating the plurality of evaporation sources, and respectively adjusting the evaporation rate of the coating material in each evaporation source according to the distance between each evaporation source and the substrate; further controlling the thickness of the film layer in the overlapped area; s3: when the thickness of the film layer on the substrate reaches the target value, the vapor deposition is stopped. The evaporation method can effectively solve the problem of uneven thickness of the coating film when a plurality of evaporation sources evaporate the same substrate at the same time.
Description
Technical Field
The invention relates to the technical field of vacuum evaporation coating, in particular to an evaporation method and an evaporation device.
Background
The vapor deposition is a process of evaporating and vaporizing a coating material by a certain heating and evaporating method under vacuum conditions, and condensing vapor of the coating material on the surface of a substrate to form a coating.
The evaporation source of the existing evaporation device mainly comprises a point source evaporation source and a line source evaporation source; the thickness of the condensed coating film of the point source evaporation source on the substrate is sequentially thinned from the middle to the periphery. The source evaporation source can form a plurality of coating films on the substrate, and two adjacent coating films have overlapping parts; on the overlapping portion, the thickness of the plating film is a superposition of the thicknesses of the edges of the adjacent two plating films. Therefore, the conventional point source evaporation source or line source evaporation source is used, and there is a problem that the thickness of the coating film is uneven.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides an evaporation method and an evaporation device.
The invention provides the following technical scheme:
an evaporation method comprising the steps of:
s1: arranging a plurality of evaporation sources in a row, and respectively adjusting the distance between each evaporation source and a substrate; when the coating materials in each evaporation source form corresponding coating on the substrate, overlapping areas exist between two adjacent coating;
s2: heating a plurality of evaporation sources, and respectively adjusting the evaporation rate of the coating material in each evaporation source according to the distance between each evaporation source and the substrate; further controlling the thickness of the film layer in the overlapping area;
s3: and stopping evaporation when the thickness of the film layer on the substrate reaches a target value.
In one possible embodiment, the step S1 further includes setting the orientation of the evaporation source to be perpendicular to the extending direction of the substrate; controlling the distances between the center lines of any two adjacent evaporation sources to be the same; and the evaporation angles of the coating materials in each evaporation source are controlled to be the same.
In one possible embodiment, the distance L between two adjacent evaporation source centerlines satisfies the following formula:
wherein θ is the evaporation angle of the coating material, and h is the distance from the evaporation source to the substrate.
In one possible embodiment, the distance L between the center lines of two adjacent evaporation sources is set to a distance of 10mm to 200mm.
In one possible embodiment, the evaporation angle θ of the coating material is 45 ° to 75 °.
In one possible implementation, the specific way to adjust the evaporation rate of the coating material in the evaporation source is to change the heating temperature of the evaporation source, so as to change the total mass of the coating material evaporated to the substrate in unit time.
In one possible embodiment, the film thickness t deposited on the substrate satisfies the following formula:
wherein m is the total mass of the coating material evaporated to the substrate in unit time; ρ is the density of the plating film; h is the distance from the evaporation source to the substrate; x is the distance from the particle at any position on the coating film to the projection position of the evaporation source on the substrate.
In a second aspect, the present invention further provides an evaporation device, where the evaporation device includes an evaporation cavity, a substrate, and a plurality of evaporation sources, the substrate and the plurality of evaporation sources are all disposed in the evaporation cavity, and the plurality of evaporation sources are all oriented to the substrate; the evaporation source comprises a spray head, a crucible, a heating wire, a fixing frame and a controller; the spray head is connected with the crucible, the crucible is fixed on the fixing frame, the heating wire is arranged on the crucible, and the heating wire is electrically connected with the controller.
In one possible implementation manner, the evaporation cavity is provided with mounting holes, and the mounting holes are uniformly arranged at intervals along the extending direction of the substrate on the outer wall of the evaporation cavity; the evaporation source is movably arranged in the mounting hole.
In one possible embodiment, the evaporation source is used for evaporating low temperature organic materials or high temperature inorganic materials.
Compared with the prior art, the invention has the beneficial effects that:
according to the evaporation method provided by the embodiment, a plurality of evaporation sources are arranged in a row, and the distance between each evaporation source and a substrate is adjusted; heating the evaporation sources, adjusting the evaporation rate of the coating materials in the corresponding evaporation sources according to the distance between each evaporation source and the substrate, and further adjusting the thickness of the film layer in the overlapping area of any two coating films so as to enable the thickness of the film layer in the overlapping area to be close to the thickness of the film layer in the non-overlapping area; when the thickness of the film layer on the substrate reaches the target value, the evaporation operation is stopped. The evaporation method can effectively solve the problem of uneven thickness of the coating film when a plurality of evaporation sources evaporate the same substrate at the same time.
In order to make the above objects, features and advantages of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic flow chart of an evaporation method according to an embodiment of the invention;
FIG. 2 is a schematic diagram showing the operation of an evaporation device according to an embodiment of the invention;
FIG. 3 shows a schematic diagram of the operation of a single evaporation source according to an embodiment of the invention;
fig. 4 is a schematic structural view of an evaporation device according to an embodiment of the invention.
Description of main reference numerals:
100-evaporating source; 110-crucible; 120-heating wires; 130-a reflector; 140-fixing frame; 150-a controller; 160-power supply; 200-a substrate; 300-overlap area.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
Example 1
Referring to fig. 1 to 3, an embodiment of the present invention provides an evaporation method. The evaporation method is used in evaporation equipment to condense a relatively uniform coating film on the surface of the substrate 200.
After the coating material in the existing point source evaporation source is heated and gasified, vapor of the coating material moves towards the substrate so as to form a circular coating on the substrate; the vapor is distributed on the substrate along a cosine function, so that the thickness of the coating film is sequentially thinned from the middle to the periphery, and uneven thickness of the coating film is further caused.
In order to improve the uniformity of the coating thickness, the ejection center of the point source evaporation source is generally offset from the center of the substrate, and the substrate is rotated when the vapor is ejected from the point source evaporation source to the substrate, thereby improving the uniformity of the coating thickness.
However, rotating the substrate within the vapor deposition chamber of the vapor deposition apparatus requires the vapor deposition chamber to have a large size, thereby increasing the manufacturing cost and maintenance cost of the vapor deposition apparatus.
A source evaporation source is often used to form a coating film of a larger size. The existing source evaporation source comprises a crucible and a plurality of spray heads, the spray heads are respectively connected with the crucible, and after the coating material in the crucible is heated and gasified, the spray heads can spray out to the substrate at the same time.
And the distance between each spray head of the existing line source and the substrate is the same, and the spray heads are arranged in a straight line shape, the intervals between two adjacent spray heads are the same, the evaporation rate of the coating material in each spray head is the same, and the evaporation angles of the coating material in each spray head are the same, so that a plurality of coating films are formed on the substrate.
To ensure the continuity of the coating film on the substrate; an overlapping area exists between two adjacent coating films, and the thickness of a film layer in the overlapping area is the superposition of the thicknesses of the edges of the two coating films; under the condition of a certain evaporation time, uneven thickness of a coating film on a substrate is probably caused.
Referring to fig. 1, the evaporation method includes the following steps:
s1: arranging a plurality of evaporation sources 100 in a row, and adjusting the distance between each evaporation source 100 and the substrate 200; so that when the plating film material in each evaporation source 100 forms a corresponding plating film on the substrate 200, the overlapping area 300 exists between two adjacent plating films.
The evaporation sources 100 in this embodiment are all point source evaporation sources, and an operator can individually control the operation state of each evaporation source 100.
The step S1 is performed by disposing the substrate 200 in a vapor deposition chamber of the vapor deposition apparatus, and filling the same type of coating material into each of the evaporation sources 100.
The step S1 further includes setting the orientation of the evaporation source 100 to be perpendicular to the extending direction of the substrate 200; controlling the distances between the center lines of any two adjacent evaporation sources 100 to be the same; and the evaporation angle of the coating material in each evaporation source 100 is controlled to be the same.
Referring to fig. 2, the evaporation angle of the film is θ, the distance from the evaporation source 100 to the substrate 200 is h, and the distance between the center lines of two adjacent evaporation sources 100 is L.
When two adjacent evaporation sources 100 are in close proximity and there is no overlap region 300, the distance between the centerlines of the two adjacent evaporation sources 100 is 2×tan θ/2*h; when the distance between the center lines of the two adjacent evaporation sources 100 is smaller than 2×tan θ/2*h, the evaporation ranges of the two evaporation sources 100 overlap, so that the edge regions of the two adjacent films overlap each other.
In some embodiments, L is disposed a distance of 10mm to 200mm.
In some embodiments, θ ranges from 45 ° to 75 °, preferably when θ is 60 °, the edge regions of two adjacent films overlap each other, and the overlapping area is preferable.
The operator can choose to adjust the evaporation angle of the plating film and the distance between the evaporation source 100 and the substrate 200 according to the actual requirement, so that when two adjacent evaporation sources 100 form the corresponding plating film on the substrate 200, the edge areas of the two plating films overlap each other.
S2: heating a plurality of evaporation sources 100, and respectively adjusting the evaporation rate of the coating material in each evaporation source 100 according to the distance between each evaporation source 100 and the substrate 200; thereby controlling the film thickness in the film coating overlapping area 300.
When the evaporation source 100 is heated, the coating material in the evaporation source 100 is heated and evaporated to form a vapor stream, which is sprayed onto the surface of the substrate 200.
Referring to fig. 3, the o-point is the position of the evaporation source 100, and the p-point is the position of the evaporation source 100 projected onto the substrate 200; q is any position where the particles of the coating material fly to the coating; r is the distance from o point to q point; x is the distance from q to p.
Assuming that the density of the coating film is ρ; the deposited film thickness is t in unit time; and the total mass of the evaporation of the coating material in the evaporation source 100 in unit time is m.
The magnitude of m is affected by the heating temperature, and the higher the heating temperature is, the larger the value of m is, and the faster the evaporation rate of the coating material is.
The thickness of the coating film at the p point is the thickest; the further the particle is from the p-point, the thinner the thickness of the coating film at the particle.
When the heating temperature of the evaporation source 100 is increased, the total mass m of the coating material evaporated to the substrate 200 per unit time becomes high, thereby increasing the thickness t of the coating film; when the distance h from the evaporation source 100 to the substrate 200 is reduced, the thickness t of the plating film is increased.
In a specific embodiment of the step S2, the controller individually controls the heating temperature of each evaporation source according to the distance between each evaporation source 100 and the substrate, so as to change the evaporation rate of the coating material in the evaporation source 100; and further, the thickness of the film layer of each plating film on the substrate 200 is changed in a unit time.
The thickness of the film layer in the overlapping area 300 is adjusted to make the thickness of the film layer in the overlapping area 300 close to the thickness of the film layer in the non-overlapping area 300, so that the uniformity of the whole thickness of the film coating on the substrate is improved.
S3: when the thickness of the film on the substrate 200 reaches the target value, the vapor deposition is stopped.
The target value of the thickness of the film layer on the substrate is t 0 ,t 0 =t; t is the expected operating time of the evaporation source.
And stopping heating the evaporation sources when the value of T is equal to a preset value, so that each evaporation source stops working.
The vapor deposition method of the present embodiment is to combine a plurality of point source evaporation sources to realize the vapor deposition effect of the source evaporation sources.
Compared with vapor deposition using a point source evaporation source, the vapor deposition method of the embodiment can improve the uniformity of the coating film without rotating the substrate 200, thereby effectively reducing the size of the vapor deposition cavity and reducing the manufacturing cost and the maintenance cost. And the time of continuous evaporation is improved.
Compared with the evaporation using the source evaporation sources, the operator can adjust the evaporation rate of the coating material in each evaporation source 100 according to the adjustment of the distance between each evaporation source 100 and the substrate 200, so as to control the thickness of the coating layer in the overlapping region 300, and further improve the uniformity of the thickness of the coating film on the substrate 200.
The vapor deposition method provided in this embodiment is achieved by arranging a plurality of the evaporation sources 100 in a row and adjusting the distance between each of the evaporation sources 100 and the substrate 200; heating the evaporation sources 100, and adjusting the evaporation rate of the coating material in the evaporation sources 100 according to the distance between each evaporation source 100 and the substrate 200, so as to adjust the thickness of the film layer in the overlapping region 300 of any two coating films, so that the thickness of the film layer in the overlapping region 300 is close to the thickness of the film layer in the non-overlapping region 300; when the thickness of the film on the substrate 200 reaches the target value, the evaporation operation is stopped. The vapor deposition method of the present invention can effectively solve the problem of uneven thickness of the coating film when the same substrate 200 is vapor-deposited by a plurality of vapor sources 100 at the same time.
Example two
Referring to fig. 1 to 4, the present invention further provides an evaporation device, which includes an evaporation cavity, a substrate 200, and a plurality of evaporation sources 100, wherein the substrate 200 and the plurality of evaporation sources 100 are disposed in the evaporation cavity, and the plurality of evaporation sources 100 face the substrate 200; the evaporation source 100 comprises a spray head, a crucible 110, a heating wire 120, a fixed frame 140 and a controller 150; the spray head is connected with the crucible 110, the crucible 110 is fixed on the fixing frame 140, the heating wire 120 is arranged on the crucible 110, and the heating wire 120 is electrically connected with the controller 150.
The crucible 110 is used for storing coating materials; the heating wire 120 is used for heating the crucible 110, so that the coating material is sprayed onto the substrate 200 by the spray head after being heated and evaporated, and a coating film is formed on the substrate 200; the controller 150 is configured to control the heating temperature of the heating wire 120 to the crucible 110, thereby controlling the evaporation rate of the coating material.
The evaporation device further comprises a reflector 130, wherein the reflector 130 is fixed on the fixing frame 140 and is arranged outside the crucible 110. The reflector 130 serves to prevent heat dissipation of the heating wire 120, thereby improving heating efficiency of the heating wire 120 to the crucible 110.
The vapor deposition device further comprises a power supply 160, wherein the power supply 160 is electrically connected with the controller 150, and the power supply 160 is used for supplying power to the controller 150 and the heating wire 120.
In some embodiments, the evaporation cavity is provided with mounting holes, and the mounting holes are uniformly spaced along the extending direction of the substrate 200 on the outer wall of the evaporation cavity; the evaporation source is movably arranged in the mounting hole. An operator can adjust the distance from the spray head to the substrate in the mounting hole.
In this embodiment, the distance from the showerhead to the substrate 200 is equal to the distance h from the evaporation source to the substrate 200, the spray angle of the showerhead is equal to the evaporation angle θ of the plating film, and the distance between the center lines of two adjacent sprayers is equal to the distance L between the center lines of two adjacent evaporation sources.
When the distance between the center lines of two adjacent spray heads is smaller than 2 tan θ/2*h, the evaporation ranges of the two evaporation sources 100 overlap.
The controller can respectively adjust the evaporation rate of the coating material in each evaporation source 100 according to the distance from each spray head to the substrate 200, so that the thickness of the coating layer in any two coating overlapping areas 300 is close to the thickness of the coating layer in the non-overlapping areas 300.
When the expected working time of the evaporation source 100 reaches a preset value, the controller 150 controls the power supply 160 to stop heating the heating wire 120, so that the coating material in the evaporation source 100 stops being emitted to the substrate, and the thickness of the coating layer on the substrate 200 meets the production requirement.
At present, the existing point source evaporation source is often used for evaporating inorganic materials, and the evaporating temperature is usually more than 500 ℃; the source evaporation source is commonly used for evaporating organic materials, and the evaporation temperature is lower than 500 ℃; therefore, when inorganic materials are evaporated, the evaporation efficiency using a point source evaporation source is low and the continuous evaporation time is short.
In some embodiments, the evaporation sources 100 within the evaporation device are all low temperature evaporation sources; when the vapor deposition apparatus is operated, a plurality of the evaporation sources 100 can simultaneously spray an organic vapor deposition material onto the substrate 200. Compared with the single point source evaporation source, the evaporation efficiency can be remarkably improved, and the continuous evaporation time can be prolonged.
In some embodiments, the evaporation sources 100 within the evaporation device are all evaporation sources for high temperature; when the vapor deposition apparatus is operated, a plurality of the evaporation sources 100 may simultaneously spray the inorganic vapor deposition material onto the substrate 200. Compared with the use of a line source evaporation source, the uniformity of the coating film can be improved.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (10)
1. An evaporation method, characterized by comprising the following steps:
s1: arranging a plurality of evaporation sources in a row, and respectively adjusting the distance between each evaporation source and a substrate; when the coating materials in each evaporation source form corresponding coating on the substrate, overlapping areas exist between two adjacent coating;
s2: heating a plurality of evaporation sources, and respectively adjusting the evaporation rate of the coating material in each evaporation source according to the distance between each evaporation source and the substrate; further controlling the thickness of the film layer in the overlapping area;
s3: and stopping evaporation when the thickness of the film layer on the substrate reaches a target value.
2. The vapor deposition method according to claim 1, wherein the step S1 further comprises setting the orientation of the evaporation source to be perpendicular to the extending direction of the substrate; controlling the distances between the center lines of any two adjacent evaporation sources to be the same; and the evaporation angles of the coating materials in each evaporation source are controlled to be the same.
3. The evaporation method according to claim 2, wherein a distance L between adjacent two of the evaporation source centerlines satisfies the following formula:
wherein θ is the evaporation angle of the coating material, and h is the distance from the evaporation source to the substrate.
4. The vapor deposition method according to claim 3, wherein a distance L between adjacent two of the center lines of the evaporation sources is set to a distance of 10mm to 200mm.
5. The vapor deposition method according to claim 3, wherein the evaporation angle θ of the coating material is 45 ° to 75 °.
6. The vapor deposition method according to claim 1, wherein the vapor deposition rate of the coating material in the evaporation source is adjusted in such a manner that the total mass of the coating material evaporated to the substrate per unit time is changed by changing the heated temperature of the evaporation source.
7. The vapor deposition method according to claim 1, wherein the film thickness t deposited on the substrate satisfies the following formula:
wherein m is the total mass of the coating material evaporated to the substrate in unit time; ρ is the density of the plating film; h is the distance from the evaporation source to the substrate; x is the distance from the particle at any position on the coating film to the projection position of the evaporation source on the substrate.
8. The evaporation device is characterized by comprising an evaporation cavity, a substrate and a plurality of evaporation sources, wherein the substrate and the evaporation sources are arranged in the evaporation cavity, and the evaporation sources face the substrate; the evaporation source comprises a spray head, a crucible, a heating wire, a fixing frame and a controller; the spray head is connected with the crucible, the crucible is fixed on the fixing frame, the heating wire is arranged on the crucible, and the heating wire is electrically connected with the controller.
9. The vapor deposition device according to claim 8, wherein the vapor deposition chamber is provided with mounting holes, and the mounting holes are uniformly spaced apart from each other along the extending direction of the substrate on the outer wall of the vapor deposition chamber; the evaporation source is movably arranged in the mounting hole.
10. The vapor deposition apparatus according to claim 8, wherein the evaporation source is used for vapor deposition of a low-temperature organic material or a high-temperature inorganic material.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160082847A (en) * | 2014-12-29 | 2016-07-11 | 주식회사 선익시스템 | Method for Controlling Operation of Evaporation Source to Improve Uniformity of Deposition Thin Film |
| CN205443432U (en) * | 2016-04-07 | 2016-08-10 | 鄂尔多斯市源盛光电有限责任公司 | Linear evaporation source, evaporation source system and coating by vaporization device |
| CN107012431A (en) * | 2017-05-04 | 2017-08-04 | 京东方科技集团股份有限公司 | A kind of vapor deposition source, vapor deposition device and vapor deposition method |
| CN107250423A (en) * | 2015-02-25 | 2017-10-13 | 夏普株式会社 | Deposition unit, evaporation coating device and evaporation coating method |
| CN111455342A (en) * | 2019-01-18 | 2020-07-28 | 北京铂阳顶荣光伏科技有限公司 | Evaporation coating equipment, evaporation coating system and evaporation coating control method |
| CN114032509A (en) * | 2021-11-08 | 2022-02-11 | Tcl华星光电技术有限公司 | Evaporation plating equipment |
-
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- 2023-01-18 CN CN202310075152.7A patent/CN116288168A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160082847A (en) * | 2014-12-29 | 2016-07-11 | 주식회사 선익시스템 | Method for Controlling Operation of Evaporation Source to Improve Uniformity of Deposition Thin Film |
| CN107250423A (en) * | 2015-02-25 | 2017-10-13 | 夏普株式会社 | Deposition unit, evaporation coating device and evaporation coating method |
| CN205443432U (en) * | 2016-04-07 | 2016-08-10 | 鄂尔多斯市源盛光电有限责任公司 | Linear evaporation source, evaporation source system and coating by vaporization device |
| CN107012431A (en) * | 2017-05-04 | 2017-08-04 | 京东方科技集团股份有限公司 | A kind of vapor deposition source, vapor deposition device and vapor deposition method |
| CN111455342A (en) * | 2019-01-18 | 2020-07-28 | 北京铂阳顶荣光伏科技有限公司 | Evaporation coating equipment, evaporation coating system and evaporation coating control method |
| CN114032509A (en) * | 2021-11-08 | 2022-02-11 | Tcl华星光电技术有限公司 | Evaporation plating equipment |
Non-Patent Citations (1)
| Title |
|---|
| 李云奇: "《真空镀膜技术与设备》", 31 October 1989, 东北工学院出版社, pages: 56 - 62 * |
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