CN1161575A - Ge-Si heterojunction diode with low forward voltage drop and high velocity - Google Patents
Ge-Si heterojunction diode with low forward voltage drop and high velocity Download PDFInfo
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- CN1161575A CN1161575A CN 96117510 CN96117510A CN1161575A CN 1161575 A CN1161575 A CN 1161575A CN 96117510 CN96117510 CN 96117510 CN 96117510 A CN96117510 A CN 96117510A CN 1161575 A CN1161575 A CN 1161575A
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- diode
- high speed
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- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 62
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Abstract
The present invention provides a kind of novel structural, SiGe heterojunction, low VF and high speed diode. The characteristic lies in that it uses SiGe polycrystal, SiGe pseudo crystal and Si monocrystal multilayer structure, thus the VF of PN junction is decreased greatly. The advantages are low VF, high switching speed and high working frequency. Said invention also gives the principle for selecting Ge component in the SiGe polycrystal and the priciple for designing each layer in the diode. The invented device features simple process, good duplicating property, and suitable for industrial prodn.
Description
The invention belongs to technical field of semiconductor device.
As everyone knows, the forward voltage drop V of silicon PN junction diode
FBe about 0.7～0.8V, because there is few sub-storage effect in the bipolar operation pattern, make device that shortcomings such as switching speed is slow, operating frequency is low be arranged, people had invented Schottky barrier diode (SBD) afterwards, and PN junction potential barrier control Schottky diode (JBS), their V
F=0.55V, and be how sub-device, the switching speed of device and operating frequency are improved, but the former exist reverse leakage current big, and the shortcoming that further increases with anti-the increase partially, and the latter all has very high requirement (requiring the following hachure of 0.5 μ m) to technology and equipment; On the other hand, germanium (Ge) PN junction diode has low V
F(about 0.25V), but there is reverse breakdown voltage V in it
BRLow shortcoming, and similar with SiPN knot be the bipolar operation pattern, switching speed is slow; In recent years, someone has proposed germanium silicon (SiGe)/silicon (Si) heterojunction diode, it is on the epitaxy Si sheet, be provided with a layer thickness less than critical thickness, high concentration SiGe pseudomorphic layer that its conduction type is opposite with epitaxy Si, directly form and draw metal electrode then thereon, make the SiGe/Si heterojunction diode, since the restriction of device architecture, the self-built electromotive force V of this PN heterojunction
b, can not be effectively reduced, make the forward characteristic of SiGe/Si heterojunction diode more little than the improvement of Si diode.
The objective of the invention is to propose a kind of germanium and silicon heterogeneous junction diode of new construction, make it both have low V
F, high switching speed and operating frequency, the V identical with the Si device
BR, have simple, the good reproducibility of technology again, be easy to characteristics such as industrialized production.
According to the invention task, the low V of the SiGe heterojunction that the present invention proposes
FHigh speed diode is characterized in that adopting the p of high-dopant concentration
+SiGe polycrystalline (or n
+The SiGe polycrystalline) as the positive pole (or negative pole) of diode.Its concrete structure: as shown in Figure 1, promptly the surface of Si substrate low doping concentration epitaxial loayer 2 is provided with conduction type SiGe pseudomorphic layer 3 identical with it and SiGe polycrystal layer 4, on described 4 layers, also be provided with the conduction type high-dopant concentration SiGe polycrystal layer 5 opposite with it, form metal electrodes and draw positive pole (or negative pole) from described 5 layers, 1 forms metal electrode and draws negative pole (or anodal) from Si substrate high-dopant concentration district.It corresponds to energy band diagram such as Fig. 2 of Fig. 1.
With p
+The SiGe/nSi diode is an example, as can be seen from Figure 2, SiGe/Si heterojunction boundary place valence band fracture △ Ev, it will stop the hole to be injected into the Si district from the SiGe district, promptly stop the injection of minority carrier, thereby when the Ge component is enough big, when promptly △ Ev is enough big, can regard device of the present invention as more than one sub-device, so it has high-speed and high operating frequency.
As everyone knows, the self-built electromotive force V of diode
b, closely related with the energy gap Eg of material.The Eg=0.67eV of Ge material, the V of Ge PN junction
BiBe about 0.25V; And the Eg=1.18eV of Si material, the V of SiPN knot
BiBe about 0.7V.From Fig. 1, Fig. 2 as can be seen, heterojunction diode of the present invention can be regarded as by p in fact when positively biased
+The pn knot that SiGe/nSiGe forms, its V
BiObviously be V between Ge and SiGeP-N knot
BiBetween, the V that can realize
BiScope is: 0.25v≤V
Bi≤ 0.5v is than the V of Si material
BiReduce its V greatly
BiChange to some extent with the variation of Ge component in the SiGe material, when the Ge component was 100%, the SiGe material became the Ge material, then V
Bi=0.25V.When the Si1 layer, when 2 layers upward pressure drop can be ignored, its V
F=V
Bi=0.25v, this characteristic is that the described SiGe diode of prior art institute is irrealizable; And when anti-inclined to one side, the PN junction depletion region is mainly to n
-The expansion of Si district, i.e. n
-The Si district is the device withstand voltage district.In other words, this device has the withstand voltage V of Si diode
BR
As everyone knows, because of the Eg of Si is bigger, under identical doping content condition, the Si device has the V more much higher than Ge device
BRTherefore, SiGe diode of the present invention has Ge or SiGe device advantage when positively biased, and has Si device advantage when anti-inclined to one side.
Ge component X can regulate Ge component content from 1%～100% variation in the SiGe material in the present invention, and promptly the size of scalable △ Ev just can be traded off according to actual needs and be regulated V
FAnd the contradiction between the operating frequency.When the needs operating frequency is high, increase the Ge component, can stop the hole to enter n
-The Si district; As needs V
FWhen low, can reduce the Ge component, allow a small amount of hole enter n
-Play electricity and lead modulating action in the district, makes V
FReduce.Concretely, to reverse breakdown voltage V
BRThe low-voltage device of≤50v, V
FMain self-built electromotive force V by heterojunction
BiDecision, i.e. V
F≈ V
Bi, the Eg little then V of healing
BiLittler, V
FLittler, so should choose bigger Ge component X, generally should get 0.3≤X≤1; To reverse breakdown voltage V
BRThe high tension apparatus of 〉=100v, its V
FBy V
BiAnd n
-Pressure drop Vn on the Withstand voltage layer
-Decision, i.e. V
F=V
Bi+ Vn
-, work as Vn
-＞＞V
BiThe time, under the requirement of satisfying frequency of utilization, should suitably reduce Ge component X, at this moment, the value of X is generally 0.01≤X＜1.
Provide design principle of the present invention below:
In the present invention, with the effect of the SiGe pseudomorphic layer 3 of Si substrate identical conduction type be the mismatch that reduces or eliminate SiGe/Si heterojunction boundary lattice, thereby reduce or eliminate the reverse current that consequent interfacial state and defective cause, the thickness of this pseudomorphic layer is △
SiGe, generally should be less than the critical thickness that forms pseudo-crystal, for example when Ge component X is 0.4 in the SiGe material, △
SiGeShould be less than 100 .
Thickness with the SiGe polycrystal layer 4 of Si substrate identical conduction type among the present invention is W
1, its W
1Selection principle be: to single side abrupt junction, depletion width X under the zero-bias
DoCan be expressed as:
In the formula: N
oDoping content for the n-SiGe layer
ε
oDielectric constant for vacuum
ε
3Relative dielectric constant for SiGe
To reverse breakdown voltage V
BRThe low-voltage device of≤50V: should get W
1≈ X
Do, can make V among the present invention like this
Bi≈ V
F, and 0.25v≤V
Bi≤ 0.5v;
To reverse breakdown voltage V
BRThe high tension apparatus of 〉=100v: generally get 0＜W
1＜X
Do, W
1Reduce help improving △ Ev blocking hole and enter n
-The ability in Si district, thus help improving device speed.
Thickness with the high-dopant concentration SiGe polycrystal layer 5 of Si substrate transoid among the present invention is W
2W
2Should be able to satisfy with its on metal electrode form good Ohmic contact.
SiGe layer among the present invention can adopt the method growth of chemical vapor deposition (CVD), carries out phosphorus, arsenic or boron autodoping then and forms, and its technology is simple, good process repeatability, be fit to industrialized production.
In SiGe3,4,5 layers, the distribution of Ge component can be uniformly, and also distribution gradient 5 increases with metal electrode from SiGe layer 3/Si layer 2 interface to the SiGe layer at the interface gradually such as the Ge component, becomes Gradient distribution.During as Gradient distribution, can form the accelerating field to non-equilibrium few son, in turn-offing transient state, this electric field plays the effect of extracting non-equilibrium few son out, thereby can improve device speed.
Germanium silicon of the present invention (SiGe) heterojunction hangs down V
FHigh speed diode has low V
F(0.25v≤V
Bi≤ 0.5v), reverse leakage current is little and irrelevant with anti-increase partially, fast and the operating frequency advantages of higher of switching speed, compare with Schottky barrier diode and also to have advantages such as the little and equivalent capacity of parasitic series resistance is little, it is simple to add preparation technology, good process repeatability is suitable for industrialized production, is good, the practical low V of a kind of performance
FHigh speed diode.
Fig. 1 structural representation of the present invention
Fig. 2 with respect to the heterojunction energy band diagram of Fig. 1 (with p
+The SiGe-nSi diode is an example)
Among the figure: 1-high-dopant concentration Si substrate; 2-Si epitaxial loayer; 3-with the SiGe pseudomorphic layer of Si substrate 1 homotype; 4-with the SiGe polycrystal layer of Si substrate 1 homotype; 5-with the SiGe polycrystal layer of Si substrate 1 transoid.
Provide embodiments of the invention in conjunction with Fig. 1:
Select＜100〉crystal orientation n/n+Si epitaxial wafer its epitaxial loayer p=0.5 Ω cm, d=6 μ m for use; On its n-Si face, use CVD method extension one deck n-SiGe pseudomorphic layer, its p=0.5 Ω cm, △
SiGe=100 , Ge component X=0.35 in the SiGe material; Use CVD method deposit one deck n-Ge polycrystal layer (being the X=1 of Ge in the SiGe material) on pseudomorphic layer then, its p=0.5 Ω cm, W
1=2000A; On nGe, use its N of CVD method deposit one deck p+Ge polycrystal layer (being Ge X=1 in the SiGe material) again
A=10
20Cm
-3, W
2=5000A; Steam Al then thereon, alloy, the positive pole of formation diode; With the thinning back side of Si epitaxial wafer with carry out conventional multilevel metallization, form the negative pole of diode, thereby make the low V of SiGe heterojunction
FHigh speed diode.
SiGe diode parameters of the present invention with have identical Si substrate, the Si diode of identical layout size compares parameter testing and the results are shown in Table 1:
The conventional Si diode of test parameter SiGe diode of the present invention
V
F(v) 0.35 0.75
t
s(ns) 0 450
t
off(ns) 20 550
V
BR(V) 35 35
Claims (5)
1, the low V of SiGe heterojunction
FHigh speed diode, comprise a negative pole and a positive pole, it is characterized in that it comprises: the surface in the low doping concentration district (2) of epitaxy Si substrate is provided with conduction type SiGe pseudomorphic layer (3) identical with it and SiGe polycrystal layer (4), on described (4) layer, also be provided with the conduction type high-dopant concentration SiGe polycrystal layer (5) opposite with it, form metal electrode and draw positive pole (negative pole) from described (5) layer, from high-dopant concentration district (1) the formation metal electrode of epitaxy Si substrate and draw negative pole (positive pole).
2, the low V of SiGe heterojunction according to claim 1
FHigh speed diode is characterized in that: described SiGe polycrystal layer Ge component X can change in 0.01≤X≤1.
3, the low V of SiGe heterojunction according to claim 1
FHigh speed diode is characterized in that: the thickness △ of the SiGe pseudomorphic layer (3) of described and Si substrate homotype
SiGeShould be less than the critical thickness that forms pseudo-crystal.
4, the low V of SiGe heterojunction according to claim 1
FHigh speed diode is characterized in that: the thickness W of the SiGe polycrystal layer (4) of described and Si substrate homotype
1Choose:
(1) to V
BRThe low-voltage device W of≤50v
l≈ X
Do(X
DoDepletion width under the zero-bias);
(2) to V
BRHigh tension apparatus O＜W of 〉=100v
1＜
Do(X
DoDepletion width under the zero-bias).
5, the low V of SiGe heterojunction according to claim 1
FHigh speed diode is characterized in that: the Ge component in the SiGe material of described (3), (4), (5) layer:
(1) is evenly distributed;
(2) layer and metal electrode interface from SiGe (3)/Si (2) PN junction interface to (5), the Ge component is the Gradient distribution that increases gradually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96117510A CN1057404C (en) | 1996-04-02 | 1996-04-02 | Ge-Si heterojunction diode with low forward voltage drop and high velocity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96117510A CN1057404C (en) | 1996-04-02 | 1996-04-02 | Ge-Si heterojunction diode with low forward voltage drop and high velocity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1161575A true CN1161575A (en) | 1997-10-08 |
| CN1057404C CN1057404C (en) | 2000-10-11 |
Family
ID=5124356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96117510A Expired - Fee Related CN1057404C (en) | 1996-04-02 | 1996-04-02 | Ge-Si heterojunction diode with low forward voltage drop and high velocity |
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| Country | Link |
|---|---|
| CN (1) | CN1057404C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1309094C (en) * | 2004-03-17 | 2007-04-04 | 清华大学 | Hole resonance tunnel-through diode based on Si/SiGe |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59189679A (en) * | 1983-04-13 | 1984-10-27 | Hitachi Ltd | Diode |
| JPH03209833A (en) * | 1989-12-01 | 1991-09-12 | Hewlett Packard Co <Hp> | Si/sige heterogeneous junction bipolar transistor using advanced epitaxial piling technic and its manufacture |
-
1996
- 1996-04-02 CN CN96117510A patent/CN1057404C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1309094C (en) * | 2004-03-17 | 2007-04-04 | 清华大学 | Hole resonance tunnel-through diode based on Si/SiGe |
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| Publication number | Publication date |
|---|---|
| CN1057404C (en) | 2000-10-11 |
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