CN116001120A - Technological method for diamond wire cutting of semiconductor monocrystalline silicon wafer - Google Patents
Technological method for diamond wire cutting of semiconductor monocrystalline silicon wafer Download PDFInfo
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- CN116001120A CN116001120A CN202211670509.8A CN202211670509A CN116001120A CN 116001120 A CN116001120 A CN 116001120A CN 202211670509 A CN202211670509 A CN 202211670509A CN 116001120 A CN116001120 A CN 116001120A
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- 238000005520 cutting process Methods 0.000 title claims abstract description 97
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 52
- 239000010432 diamond Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000002173 cutting fluid Substances 0.000 claims abstract description 29
- 239000004698 Polyethylene Substances 0.000 claims abstract description 14
- -1 polyethylene Polymers 0.000 claims abstract description 14
- 229920000573 polyethylene Polymers 0.000 claims abstract description 14
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000007761 roller coating Methods 0.000 claims abstract description 7
- 238000003825 pressing Methods 0.000 claims abstract description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 239000011247 coating layer Substances 0.000 claims description 4
- 238000013459 approach Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a process method for diamond wire cutting of a semiconductor monocrystalline silicon wafer. The primary and auxiliary materials used in the method comprise a cutting roller coating material, a wire passing wheel material, aqueous cutting fluid and diamond wires, wherein the cutting roller coating material is a high polymer polyethylene material; the wire passing wheel coil is made of high polymer polyethylene material, the supporting frame is made of aluminum alloy material, and the supporting frame and the high polymer polyethylene coil are pressed into a whole by using a high-temperature pressing method; the ratio of the water-based cutting fluid to water is 1: 200+ -20 ratio; the diamond wire is an electroplated diamond wire with a bus wire diameter of 90-110 mu m and a grain diameter of 5-12 mu m; the sectional reciprocating cutting method is adopted, parameters such as reciprocating distance, cutting fluid temperature, cutting fluid flow, cutting line consumption and the like are set in a targeted manner according to the steps and cutting stages of the length and the thickness of the single crystal, and the processes of different cutting stages are adjusted in a personalized manner according to the surface morphology of the slice. The process method can improve the product yield on the basis of improving the slicing efficiency.
Description
Technical Field
The invention relates to a process method for diamond wire cutting of a semiconductor monocrystalline silicon wafer, which is applied to a diamond wire slicing process of a large-diameter monocrystalline, and belongs to the technical field of semiconductor silicon material processing.
Background
Monocrystalline silicon material is one of semiconductor materials with highest utilization rate and the widest range in the world today, and is a basic material for manufacturing integrated circuits. The semiconductor component made of the large-diameter monocrystalline silicon rod is an important consumable of integrated circuit etching equipment, and along with the daily variation of various electronic products and the increasing of the demand, the demand of the market for the IC-level silicon wafer is increased, and as a matched product, the demand of the large-diameter monocrystalline component for the etcher is also increased.
The wire cutting process is one of important processing processes of the large-diameter semiconductor single crystal silicon rod, the slicing quality and the slicing efficiency of the wire cutting process are directly related to slicing yield and market supply, and how to ensure the slicing yield under the condition of improving the slicing efficiency is one of the subjects of research.
According to the development law of the current global semiconductor component market, the demand of semiconductor components for large-diameter etchers is found to be in an increasing trend. The cost reduction, high efficiency and stable supply are the development direction of the semiconductor components in the future, and the diamond wire cutting of the semiconductor material can effectively improve the slicing efficiency and accord with the development trend in the future.
The traditional mortar cutting mode has low cutting efficiency, high process control difficulty and dirty working environment. The occurrence of diamond wire slicing effectively improves the situation, but how to adjust the slicing process and how to select proper raw and auxiliary materials to ensure the yield of diamond wire cutting, reduce the wire breakage rate and further stabilize the wafer-out is a great difficulty in semiconductor diamond wire cutting.
Disclosure of Invention
The invention aims to provide a process method for diamond wire cutting of a semiconductor monocrystalline silicon wafer, which ensures the product quality of a large-diameter monocrystalline part cut by the diamond wire and improves the product yield on the basis of improving the slicing efficiency.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the method comprises the steps of using a cutting roller coating material, a wire passing wheel material, aqueous cutting fluid and a diamond wire as raw materials and auxiliary materials, wherein the cutting roller coating material is a high-molecular polyethylene material; the wire passing wheel coil is made of high polymer polyethylene material, the supporting frame is made of aluminum alloy material, and the supporting frame and the high polymer polyethylene coil are pressed into a whole by using a high-temperature pressing method; the ratio of the water-based cutting fluid to water is 1: 200+ -20 ratio; the diamond wire is an electroplated diamond wire with a bus wire diameter of 90-110 mu m and a grain diameter of 5-12 mu m;
the sectional type reciprocating cutting method is adopted, and comprises the following steps:
parameters such as reciprocating distance, cutting fluid temperature, cutting fluid flow, cutting line consumption and the like are set in steps and cutting stages according to the length of the single crystal and the thickness of the slice, and processes of different cutting stages are adjusted in a personalized mode according to the surface morphology of the slice. The whole process of the diamond wire speed of the method is controlled to be 5 seconds from 0 to a preset speed. The minimum line speed at the knife-in position is controlled to be 17-20m/s, and the line bow at the position is minimum. Thereafter, the wire speed is gradually increased to 28-30m/s, and the high wire speed is beneficial to increasing the cutting capability of the small-particle diamond wire to reduce the wire bow. The advancing distance of the diamond wire is uniformly set to 400m, and the backing distance is 397-398m and the wire consumption is less because the earlier cutting area is smaller, so that the backing distance is reduced to 385-388m in cutting to adapt to the wire loss caused by the gradually increased cutting area, and the wire consumption is increased. When the diamond wire is positioned in the middle of the slice, the cutting area is the largest, and after that, the cutting area is reduced, the backward distance can be gradually increased and reduced to the initial cutting value until the cutting is finished. The larger the single crystal length, the thinner the thickness, the smaller the set back distance should be, and the more lines are consumed.
In the method of the invention, the maximum interval of the cutting units is 30mm, the cutting units at the cutter inlet can be 3-5mm, and the cutting area is dynamically adjusted according to the diameter of the single crystal. The stable cutting of the large-diameter single crystal slice is completed through the control of the process, so that the slice parameters are stabilized under the condition of effectively guaranteeing the slice yield.
Further, the thickness of the coating layer is 6-30mm, and when the slice thickness is 0mm < T less than or equal to 9mm, the service life of the cutting groove is controlled within 3 cutters; when the slice thickness is 9<T-15 mm, the service life of the cutting groove is controlled within 4 cutters; when the slice thickness is more than 15mm, the service life of the cutting groove is controlled within 3 cutters.
Further, a single wire passing wheel is replaced with an 8-knife.
Further, the temperature of the cutting fluid is controlled within 18-23 ℃, the service life is 1 knife, the cutting fluid is replaced after each knife is cut, the cutting chamber is washed before the next cutting, and the filter screen is replaced. The flow rate of the cutting fluid is preferably 230kg/min.
Further, the cutting tension of the diamond wire is set to 60-70% of the breaking force of the wire.
The invention has the beneficial effects that:
the invention can effectively improve the yield of diamond wire slicing, reduce the breakage rate of large-diameter slices, and has the characteristics of high stability, good slice surface parameters and the like. The invention effectively improves the slicing quality of the large-diameter single crystal and is easy to popularize and use in the same industry. The invention is beneficial to continuous production of enterprises in a short time, improves the slicing yield of large-diameter monocrystalline components, realizes the aims of reducing cost and improving quality and efficiency, and provides an effective, efficient and stable diamond wire cutting method for the long-term development of large-diameter semiconductor slicing industry.
Detailed Description
The present invention will be described in further detail with reference to examples, but it is not meant to limit the scope of the present invention.
The raw materials and auxiliary materials used in the process method comprise a cutting roller coating material, a wire passing wheel material, water-based cutting fluid and diamond wires; the cutting process adopts a self-setting sectional type reciprocating cutting method.
The invention changes and selects the coating material of the cutting roller in the step (1); (2) changing and selecting the material of the wire passing wheel; (3) replacing and selecting cutting fluid; (4) selecting the wire diameter of the diamond wire and the particle diameter of the diamond; (5) And the stable cutting of the large-diameter monocrystalline slices is completed by controlling the processes of setting cutting process conditions and the like, so that the slicing parameters are stabilized under the condition of effectively guaranteeing the slicing yield.
In the process method, the cutting roller is coated by using a high polymer polyethylene material, namely, the cutting roller is provided with a coating layer formed by the high polymer polyethylene material, the thickness of the coating layer is 6-30mm, and when the thickness of a slice is 0mm < T < 9mm, the service life of the cutting groove is controlled within 3 cutters; when the slice thickness is 9<T-15 mm, the service life of the cutting groove is controlled within 4 cutters; when the slice thickness is more than 15mm, the service life of the cutting groove is controlled within 3 cutters, and the parameter defect or wire breakage caused by the deformation of the cutting groove is prevented. The coil of the wire passing wheel is made of high polymer polyethylene materials, the supporting frame is made of aluminum alloy materials, the supporting frame and the high polymer polyethylene coil are pressed into a whole by using a high-temperature pressing method, the traditional glue bonding method is replaced by the high-temperature pressing method, the integration of the wire passing wheel is improved, and the single wire passing wheel is replaced in time by using 8 cutters. The cutting fluid variety can be GREATOP brand colorless water-soluble diamond wire semiconductor cutting fluid which is available in the market, and the ratio of the cutting fluid to water is 1: 200+/-20, wherein the temperature of the cutting fluid is controlled within 18-23 ℃, the service life is 1 knife, the cutting fluid is replaced by new cutting fluid after each knife is cut, the cutting chamber is washed before the next cutting, and the filter screen is replaced. The diamond wire is an electroplated diamond wire with a bus wire diameter of 90-110 mu m and a grain diameter of 5-12 mu m, the cutting tension is set to be 60-70% of the breaking force of the wire, the flatness and parallelism parameters of the surface of a slice can be effectively improved by adopting the wire, a wire bow can be reduced by combining with the setting of a slicing process, the breaking force of the diamond wire can be fully exerted, and finally, a proper cutting process is set before cutting, and the cutting is carried out by adopting the sectional type reciprocating cutting method.
Examples
In this example, large-diameter single crystal silicon having a diameter of 325mm is taken as an example, and 339mm is set as a cutting end position. As shown in table 1, the cutting process is divided into 21 cutting units, the cutting units at the cutter inlet and outlet positions are smaller, the consumption of wires is less, the cutting units at the cutting positions are increased, and the consumption of wires is increased. The cutting speed of the single crystal is 1mm/min, and the speed of the outlet knife is reduced, so as to reduce the wire bow and control the surface parameters. The forward (advancing) distance of the cutter roll was set to 400m, and the smaller the reverse (retreating) distance, the more the wire was consumed. The reversing distance is reduced from the initial value to the initial value, and then is increased to be reduced to adapt to the characteristic of the change of the cutting area along with time to control the line consumption. The rotation speed of the diamond wire is initially set to be 18m/s, the rotation speed of the diamond wire is gradually increased to be 28m/s in cutting, and the cutting force of the diamond wire is stronger as the rotation speed of the diamond wire is higher than that of the diamond wire which is Gao Jingang, so that the wire bow can be reduced. The flow rate of the cutting fluid is set to be 230kg/min, the temperature of the cutting fluid is 20 ℃, and the cutting fluid can play a role in discharging silicon powder scraps and cooling the large-diameter single crystal body during cutting.
TABLE 1
According to all the embodiments of the invention, namely, a high molecular polyethylene coating material with better durability and abrasion resistance and a wire passing wheel with molecular weight not lower than 900 ten thousand are selected, cutting fluid, small particle diamond wires, proper tension, proper wire slot use times, proper cutting fluid temperature and the like are replaced by each cutter, wire bow is reduced through high wire speed, wire consumption of cutting area is adapted, a method of a cutting unit with single crystal diameter and the like is adapted, the defective rate of the slice surface of a large-diameter silicon part for etching with the slice flatness and parallelism required to be 50 mu m can be reduced to below 0.5%, the average value of related parameters is about 15 mu m, compared with the conventional method, the cutting rate of the slice breaking rate can be reduced to below 1%, the cutting speed of 1mm/min is greatly improved, and the mass production of silicon chips for enterprise etching is facilitated.
Claims (7)
1. The technological method for diamond wire cutting of the semiconductor monocrystalline silicon piece is characterized in that raw and auxiliary materials used in the method comprise a cutting roller coating material, a wire passing wheel material, aqueous cutting fluid and a diamond wire, wherein the cutting roller coating material is a high polymer polyethylene material; the wire passing wheel coil is made of high polymer polyethylene material, the supporting frame is made of aluminum alloy material, and the supporting frame and the high polymer polyethylene coil are pressed into a whole by using a high-temperature pressing method; the ratio of the water-based cutting fluid to water is 1: 200+ -20 ratio; the diamond wire is an electroplated diamond wire with a bus wire diameter of 90-110 mu m and a grain diameter of 5-12 mu m;
the sectional type reciprocating cutting method is adopted, and comprises the following steps:
the whole process of the time for accelerating the diamond wire speed from 0 to the preset speed is controlled within 5 seconds; the linear speed at the cutter entering position is controlled to be 17-20m/s, and the linear speed is gradually increased to 28-30m/s; the advancing distance of the diamond wire is uniformly set to 400m, the retreating distance is 385-398m, when the diamond wire approaches the middle part of the slice, the retreating distance is gradually reduced, and when the diamond wire is far away from the middle part of the slice, the retreating distance is gradually increased and reduced to an initial cutter feeding value until the cutting is finished.
2. The process method for diamond wire cutting of the semiconductor monocrystalline silicon piece according to claim 1, wherein the maximum interval of the cutting units is 30mm, the cutting units at the cutter inlet are 3-5mm, and the cutting area is dynamically adjusted according to the diameter of the monocrystalline.
3. The process method for diamond wire cutting of the semiconductor monocrystalline silicon piece according to claim 1, wherein the thickness of the coating layer is 6-30mm, and when the slice thickness is 0mm < T < 9mm, the service life of the cutting groove is controlled within 3 cutters; when the slice thickness is 9<T-15 mm, the service life of the cutting groove is controlled within 4 cutters; when the slice thickness is more than 15mm, the service life of the cutting groove is controlled within 3 cutters.
4. A process for diamond wire cutting of a semiconductor single crystal silicon wafer according to claim 3 wherein the individual wire-passing wheel is replaced with an 8-knife.
5. The process method for diamond wire cutting of the semiconductor monocrystalline silicon piece according to claim 1, wherein the temperature of the cutting fluid is controlled within 18-23 ℃, the service life is 1 knife, the cutting fluid is replaced after each knife is cut, the cutting chamber is flushed before the next cutting, and the filter screen is replaced.
6. The process for diamond wire cutting of a semiconductor single crystal silicon wafer according to claim 5, wherein the flow rate of the cutting fluid is 230kg/min.
7. The process for diamond wire cutting of a semiconductor single crystal silicon wafer according to claim 1, wherein the cutting tension of the diamond wire is set to 60-70% of the wire breaking force.
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