CN115803814A - Storage medium reading method and related equipment - Google Patents
Storage medium reading method and related equipment Download PDFInfo
- Publication number
- CN115803814A CN115803814A CN202080102871.8A CN202080102871A CN115803814A CN 115803814 A CN115803814 A CN 115803814A CN 202080102871 A CN202080102871 A CN 202080102871A CN 115803814 A CN115803814 A CN 115803814A
- Authority
- CN
- China
- Prior art keywords
- voltage
- reading
- read
- controller
- page type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
Landscapes
- Read Only Memory (AREA)
Abstract
一种存储介质的读取方法以及相关设备，读电压管理表中同一个管理区域和同一个页类型下的多个物理地址有相同的读电压索引，存在至少一个读电压索引对应的读电压是同一个页类型对应的多个读电压，能够节约内存资源。本申请实施例方法包括：控制器根据物理地址对应的第一读电压索引，确定出第一读电压索引对应的第一读电压，根据第一读电压对存储介质进行读操作。其中，读电压管理表存储了读电压索引分别与多个管理区域和多个页类型之间的对应关系，以及读电压索引与不同页类型下的读电压之间的对应关系。
A method for reading a storage medium and related equipment, multiple physical addresses in the same management area and the same page type in the read voltage management table have the same read voltage index, and there is at least one read voltage index corresponding to the read voltage is Multiple read voltages corresponding to the same page type can save memory resources. The method in the embodiment of the present application includes: the controller determines the first read voltage corresponding to the first read voltage index according to the first read voltage index corresponding to the physical address, and performs a read operation on the storage medium according to the first read voltage. Wherein, the read voltage management table stores the corresponding relationship between the read voltage index and multiple management areas and multiple page types, and the corresponding relationship between the read voltage index and the read voltage under different page types.
Description
PCT国内申请，说明书已公开。PCT domestic application, specification has been published.
Claims (24)
- A method of reading a storage medium, comprising:the controller analyzes the read command and acquires a target physical address corresponding to the read command;the controller determines a management area and a target page type respectively corresponding to the target physical address based on the target physical address, wherein the management area is a physical space corresponding to at least one physical address in a storage medium;the controller acquires a first read voltage index from a read voltage management table locally stored by the controller based on the management area and the target page type;the controller acquires a first reading voltage from the reading voltage management table according to the first reading voltage index, wherein the reading voltage management table stores corresponding relations between the reading voltage index and a plurality of management areas and between the reading voltage index and reading voltages under different page types, and at least one page type in the page types corresponds to a plurality of reading voltages;and the controller executes the read command according to the first read voltage and reads data from the storage medium.
- The method of claim 1, wherein the read voltage management table has a two-level table structure, wherein a first level table of the read voltage management table stores the correspondence between the plurality of management areas and the plurality of page types and the read voltage index, and wherein a second level table of the read voltage management table stores the correspondence between the read voltage index and the read voltages under the plurality of page types.
- The method of claim 1 or 2, wherein after the reading data from the storage medium according to the first read voltage by executing the read command, the method further comprises:if the controller fails to read data from the storage medium according to the first reading voltage, acquiring a first reading recovery voltage;the controller determines a second read recovery voltage according to the relationship between the first read recovery voltage and the read voltage stored in the second-level table;and the controller updates the read voltage management table to be updated according to the second read recovery voltage to obtain the read voltage management table.
- The method of claim 3, wherein the controller determines a second read recovery voltage based on the relationship between the first read recovery voltage and the read voltages stored in the second level table, comprising:if the distance between the first reading recovery voltage and a second reading voltage stored in the second-level table meets a preset condition, the controller determines that the second reading recovery voltage is the second reading voltage, wherein the page type corresponding to the first reading recovery voltage is the same as the page type corresponding to the second reading voltage;and if the distance between the first reading recovery voltage and any row reading voltage stored in the second-level table does not meet a preset condition, the controller determines that the second reading recovery voltage is the first recovery reading voltage.
- The method of claim 4, wherein the second-level table further comprises a page type count indicating a number of times a read voltage for a page type corresponding to a physical address is hit;the controller updates the read voltage management table to be updated according to the second read recovery voltage, and the method comprises the following steps:if the controller determines that the second reading recovery voltage is the second reading voltage, updating a page type count corresponding to the second reading voltage in a second-level table to be updated to obtain the second-level table;the controller determines a first row index corresponding to the second reading voltage, wherein the first row index is a row index of the second reading voltage in the second-level table;in a first-level table to be updated, the controller updates the value of the first read voltage index into the first row label to obtain the first-level table.
- The method of claim 4, wherein the second level table further comprises a page type count;the controller updates the read voltage management table to be updated according to the second read recovery voltage, and the method comprises the following steps:if the controller determines that the second read recovery voltage is the first recovery read voltage, determining a first page type count in the second-level table to be updated, wherein the first page type count has a minimum value in the page type counts corresponding to the target page type;the controller updates a third read voltage to the second read restore voltage, wherein the third read voltage corresponds to the first page type count;the controller updates a value of the first page type count.
- The method of claim 6, wherein after the controller determines the first page type count, the method further comprises:the controller determines a second row label corresponding to the first page type count, wherein the second row label is a row label of the first page type count in the second-level table;in the first-level table to be updated, the controller determines a second read voltage index, wherein a value of the second read voltage index is the second row label, and a page type corresponding to the second read voltage index is the target page type;the controller updates the value of the second reading voltage index to a preset value;the controller updates the first read voltage index value to the second row index.
- The method according to any one of claims 1 to 7, wherein the plurality of management areas are divided in advance according to a management granularity of the storage medium;the management granularity includes a page of the storage medium, or a block of the storage medium.
- The method of any of claims 1 to 7, wherein the storage medium comprises NOR flash memory or NAND flash memory;the NAND flash memory includes: multi-level cell MLC, three-level cell TLC, or four-level cell QLC.
- The method of any of claims 1 to 7, wherein the controller comprises a controller in a Universal Flash Storage (UFS) device.
- A storage controller, comprising:a processor, a memory, a host side interface and a storage medium side interface;the memory is used for storing a reading voltage management table, wherein the reading voltage management table stores corresponding relations between reading voltage indexes and a plurality of management areas and a plurality of page types respectively, and corresponding relations between the reading voltage indexes and reading voltages under different page types, at least one page type in the page types corresponds to a plurality of reading voltages, and each management area in the management areas is a physical space corresponding to at least one physical address in a storage medium;the processor is configured to:analyzing the read command received through the host side interface to obtain a target physical address corresponding to the read command;determining a management area and a target page type respectively corresponding to the target physical address based on the target physical address;acquiring a first reading voltage index from the reading voltage management table based on the management area and the target page type;acquiring a first reading voltage from the reading voltage management table according to the first reading voltage index;and issuing the read command to the storage medium through the storage medium side interface according to the first read voltage, and reading data from the storage medium.
- The memory controller according to claim 11, wherein the read voltage management table has a two-level table structure, wherein a first level table of the read voltage management table stores the correspondence between the plurality of management areas and the plurality of page types and the read voltage index, and a second level table of the read voltage management table stores the correspondence between the read voltage index and the read voltages under the plurality of page types.
- The storage controller of claim 11 or 12, wherein the processor is further configured to:if the data reading from the storage medium fails according to the first reading voltage, acquiring a first reading recovery voltage;determining a second read recovery voltage according to the relationship between the first read recovery voltage and the read voltage stored in the second-level table;and updating the read voltage management table to be updated according to the second read recovery voltage to obtain the read voltage management table.
- The storage controller of claim 13, wherein the processor is configured to:if the distance between the first reading recovery voltage and the second reading voltage stored in the second-level table meets a preset condition, determining that the second reading recovery voltage is the second reading voltage, wherein the page type corresponding to the first reading recovery voltage is the same as the page type corresponding to the second reading voltage;and if the distance between the first reading recovery voltage and the reading voltage of any row stored in the second-level table does not meet a preset condition, determining that the second reading recovery voltage is the first recovery reading voltage.
- The memory controller according to claim 14, wherein the second-level table further includes a page type count indicating a number of times of hitting a read voltage of a page type corresponding to a physical address;the processor is configured to:if the second reading recovery voltage is determined to be the second reading voltage, updating a page type count corresponding to the second reading voltage in a second-level table to be updated to obtain the second-level table;determining a first row label corresponding to the second reading voltage, wherein the first row label is a row label of the second reading voltage in the second-level table;and updating the value of the first reading voltage index into the first row label in a first-level table to be updated to obtain the first-level table.
- The memory controller of claim 14, wherein the second level table further comprises a page type count;the processor is configured to:if the second read recovery voltage is determined to be the first recovery read voltage, determining a first page type count in the second-level table to be updated, wherein the first page type count has a minimum value in the page type counts corresponding to the target page types;updating a third read voltage to the second read restore voltage, wherein the third read voltage corresponds to the first page type count;and updating the value of the first page type count.
- The storage controller of claim 16, wherein the processor is further configured to:determining a second row label corresponding to the first page type count, wherein the second row label is a row label of the first page type count in the second-level table;determining a second reading voltage index in the first-level table to be updated, wherein the value of the second reading voltage index is the second row label, and the page type corresponding to the second reading voltage index is the target page type;updating the value of the second read voltage index to a preset value;and updating the first reading voltage index value to the second row index.
- The storage controller according to any one of claims 11 to 17, wherein the plurality of management areas are divided in advance according to a management granularity of the storage medium;the management granularity includes a page of the storage medium, or a block of the storage medium.
- The storage controller of any of claims 11 to 17, wherein the storage medium comprises NOR flash memory or NAND flash memory;the NAND flash memory includes: multi-level cell MLC, three-level cell TLC, or four-level cell QLC.
- A storage controller according to any of claims 11 to 17, comprising a controller in a UFS device.
- A storage system, comprising:a controller and a storage medium;the controller comprises the storage controller of any one of claims 11 to 20;each storage unit in the storage medium stores at least two bits of data.
- The system of claim 21, wherein the storage medium comprises NOR flash memory or NAND flash memory;the NAND flash memory includes a multi-level cell MLC, a three-level cell TLC, or a four-level cell QLC.
- A computer-readable storage medium, characterized in that a program is stored in the computer-readable storage medium, which, when executed by the computer, performs the method according to any one of claims 1 to 10.
- A computer program product, characterized in that when the computer program product is executed on a computer, the computer performs the method according to any one of claims 1 to 10.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/127729 WO2022099441A1 (en) | 2020-11-10 | 2020-11-10 | Method for reading storage medium, and related device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115803814A true CN115803814A (en) | 2023-03-14 |
Family
ID=81600709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080102871.8A Pending CN115803814A (en) | 2020-11-10 | 2020-11-10 | Storage medium reading method and related equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115803814A (en) |
| WO (1) | WO2022099441A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115938442A (en) * | 2022-12-20 | 2023-04-07 | 珠海妙存科技有限公司 | Multi-scene flash memory data migration method and device, electronic equipment and medium |
| CN115793991B (en) * | 2023-01-20 | 2023-04-14 | 苏州浪潮智能科技有限公司 | A data reading method, device, electronic equipment and readable storage medium |
| CN116564391B (en) * | 2023-03-17 | 2024-03-01 | 平头哥(成都)半导体有限公司 | Storage control chip, solid state disk and flash memory read voltage determining method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101335047A (en) * | 2007-06-28 | 2008-12-31 | 三星电子株式会社 | Flash memory device and method of adjusting read voltage of flash memory device |
| KR20130102397A (en) * | 2012-03-07 | 2013-09-17 | 삼성전자주식회사 | Flash memory and reading method of flash memory |
| US20180158493A1 (en) * | 2016-12-05 | 2018-06-07 | SK Hynix Inc. | Apparatus and method for controlling memory device |
| CN108735253A (en) * | 2017-04-20 | 2018-11-02 | 三星电子株式会社 | non-volatile memory storage system |
| CN109840047A (en) * | 2017-11-27 | 2019-06-04 | 华为技术有限公司 | It is a kind of to reduce the method and device for reading delay |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130185612A1 (en) * | 2012-01-18 | 2013-07-18 | Samsung Electronics Co., Ltd. | Flash memory system and read method of flash memory system |
| CN106057243B (en) * | 2016-05-27 | 2019-10-18 | 华为技术有限公司 | Application read reference voltage determination method and device |
| CN106448737B (en) * | 2016-09-30 | 2020-12-01 | 厦门旌存半导体技术有限公司 | Method and device for reading flash memory data and solid state drive |
| CN110007861A (en) * | 2019-03-29 | 2019-07-12 | 新华三技术有限公司 | A kind of method for reading data and device |
-
2020
- 2020-11-10 CN CN202080102871.8A patent/CN115803814A/en active Pending
- 2020-11-10 WO PCT/CN2020/127729 patent/WO2022099441A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101335047A (en) * | 2007-06-28 | 2008-12-31 | 三星电子株式会社 | Flash memory device and method of adjusting read voltage of flash memory device |
| KR20130102397A (en) * | 2012-03-07 | 2013-09-17 | 삼성전자주식회사 | Flash memory and reading method of flash memory |
| US20180158493A1 (en) * | 2016-12-05 | 2018-06-07 | SK Hynix Inc. | Apparatus and method for controlling memory device |
| CN108735253A (en) * | 2017-04-20 | 2018-11-02 | 三星电子株式会社 | non-volatile memory storage system |
| CN109840047A (en) * | 2017-11-27 | 2019-06-04 | 华为技术有限公司 | It is a kind of to reduce the method and device for reading delay |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022099441A1 (en) | 2022-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102643916B1 (en) | Storage device, memory system, and read voltage decision method thererof | |
| CN106448737B (en) | Method and device for reading flash memory data and solid state drive | |
| US10852978B2 (en) | Key-value store using journaling with selective data storage format | |
| CN109086219B (en) | De-allocation command processing method and storage device thereof | |
| CN115803814A (en) | Storage medium reading method and related equipment | |
| CN107797934B (en) | Method for processing de-allocation command and storage device | |
| CN107797938B (en) | Method for accelerating de-allocation command processing and storage device | |
| US11687447B1 (en) | Method and apparatus for performing access control of memory device with aid of additional physical address information | |
| US9009442B2 (en) | Data writing method, memory controller and memory storage apparatus | |
| CN113419675A (en) | Write operation method and read operation method for memory | |
| CN113076218B (en) | Method for rapidly processing data reading errors of NVM (non-volatile memory) chip and controller thereof | |
| CN107203341A (en) | Date storage method, device and flash chip based on flash memory | |
| CN116469440A (en) | Computer-readable storage medium, method and device for reading data by using optimized reading voltmeter | |
| CN103106148B (en) | Block management method, memory controller and memory storage device | |
| WO2024158577A1 (en) | Generating virtual blocks using partial good blocks | |
| US20240103732A1 (en) | Data processing method for improving continuity of data corresponding to continuous logical addresses as well as avoiding excessively consuming service life of memory blocks and the associated data storage device | |
| CN109273037B (en) | Data reading method and storage controller | |
| US10007601B2 (en) | Data storage device and operating method for flash memory | |
| JP2023139827A (en) | memory system | |
| CN105718328B (en) | The data back up method and system of memory bad block | |
| US12379864B2 (en) | Empty page scan operations adjustment | |
| US12067286B2 (en) | Data processing method for efficiently processing data stored in the memory device by splitting data flow and the associated data storage device | |
| CN112100091B (en) | Two-level mapping table data mapping method and device, storage medium and electronic equipment | |
| CN110289036B (en) | Read voltage optimization method and memory controller | |
| US20240103733A1 (en) | Data processing method for efficiently processing data stored in the memory device by splitting data flow and the associated data storage device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |