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CN115803814A - 一种存储介质的读取方法以及相关设备 - Google Patents

一种存储介质的读取方法以及相关设备 Download PDF

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Publication number
CN115803814A
CN115803814A CN202080102871.8A CN202080102871A CN115803814A CN 115803814 A CN115803814 A CN 115803814A CN 202080102871 A CN202080102871 A CN 202080102871A CN 115803814 A CN115803814 A CN 115803814A
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China
Prior art keywords
voltage
reading
read
controller
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CN202080102871.8A
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Inventor
张杨
程智翔
张碧华
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN115803814A publication Critical patent/CN115803814A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention

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  • Read Only Memory (AREA)

Abstract

一种存储介质的读取方法以及相关设备，读电压管理表中同一个管理区域和同一个页类型下的多个物理地址有相同的读电压索引，存在至少一个读电压索引对应的读电压是同一个页类型对应的多个读电压，能够节约内存资源。本申请实施例方法包括：控制器根据物理地址对应的第一读电压索引，确定出第一读电压索引对应的第一读电压，根据第一读电压对存储介质进行读操作。其中，读电压管理表存储了读电压索引分别与多个管理区域和多个页类型之间的对应关系，以及读电压索引与不同页类型下的读电压之间的对应关系。

Description

PCT国内申请，说明书已公开。

Claims (24)

  1. PCT国内申请，权利要求书已公开。
CN202080102871.8A 2020-11-10 2020-11-10 一种存储介质的读取方法以及相关设备 Pending CN115803814A (zh)

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PCT/CN2020/127729 WO2022099441A1 (zh) 2020-11-10 2020-11-10 一种存储介质的读取方法以及相关设备

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CN115803814A true CN115803814A (zh) 2023-03-14

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WO (1) WO2022099441A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115938442A (zh) * 2022-12-20 2023-04-07 珠海妙存科技有限公司 多场景的闪存数据偏移方法、装置、电子设备及介质
CN115793991B (zh) * 2023-01-20 2023-04-14 苏州浪潮智能科技有限公司 一种数据的读取方法、装置、电子设备及可读存储介质
CN116564391B (zh) * 2023-03-17 2024-03-01 平头哥(成都)半导体有限公司 存储控制芯片、固态硬盘和闪存读电压确定方法

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CN101335047A (zh) * 2007-06-28 2008-12-31 三星电子株式会社 闪存装置和调节闪存装置的读电压的方法
KR20130102397A (ko) * 2012-03-07 2013-09-17 삼성전자주식회사 플래시 메모리 및 플래시 메모리에서의 리드 방법
US20180158493A1 (en) * 2016-12-05 2018-06-07 SK Hynix Inc. Apparatus and method for controlling memory device
CN108735253A (zh) * 2017-04-20 2018-11-02 三星电子株式会社 非易失性存储器存储系统
CN109840047A (zh) * 2017-11-27 2019-06-04 华为技术有限公司 一种降低读延时的方法及装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130185612A1 (en) * 2012-01-18 2013-07-18 Samsung Electronics Co., Ltd. Flash memory system and read method of flash memory system
CN106057243B (zh) * 2016-05-27 2019-10-18 华为技术有限公司 应用读参考电压确定方法及装置
CN106448737B (zh) * 2016-09-30 2020-12-01 厦门旌存半导体技术有限公司 读取闪存数据的方法、装置以及固态驱动器
CN110007861A (zh) * 2019-03-29 2019-07-12 新华三技术有限公司 一种数据读取方法和装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101335047A (zh) * 2007-06-28 2008-12-31 三星电子株式会社 闪存装置和调节闪存装置的读电压的方法
KR20130102397A (ko) * 2012-03-07 2013-09-17 삼성전자주식회사 플래시 메모리 및 플래시 메모리에서의 리드 방법
US20180158493A1 (en) * 2016-12-05 2018-06-07 SK Hynix Inc. Apparatus and method for controlling memory device
CN108735253A (zh) * 2017-04-20 2018-11-02 三星电子株式会社 非易失性存储器存储系统
CN109840047A (zh) * 2017-11-27 2019-06-04 华为技术有限公司 一种降低读延时的方法及装置

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