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CN114127902A - Large Area High Density Plasma Processing Chamber for Flat Panel Displays - Google Patents

Large Area High Density Plasma Processing Chamber for Flat Panel Displays Download PDF

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Publication number
CN114127902A
CN114127902A CN201980098501.9A CN201980098501A CN114127902A CN 114127902 A CN114127902 A CN 114127902A CN 201980098501 A CN201980098501 A CN 201980098501A CN 114127902 A CN114127902 A CN 114127902A
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plates
diffuser
plate
cover plate
diffusion
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Inventor
苏希尔·安瓦尔
吉万·普拉卡什·塞奎拉
吴玉伦
J·库德拉
卡尔·A·索伦森
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Applied Materials Inc
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Applied Materials Inc
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119Windows
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Chemical & Material Sciences (AREA)
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  • General Chemical & Material Sciences (AREA)
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Abstract

本文描述的多个实施方式提供了一种用于在腔室的内部空间内的等离子体密度和气体分配的独立控制的盖板。所述盖组件包括气体分配组件,所述气体分配组件包括多个扩散板,所述扩散板的一部分由介电板分隔,其中所述多个扩散板中的每个扩散板包括形成在第一表面中的槽和形成在所述槽的表面和与所述第一表面相对的第二表面之间的一个或多个孔口。

Figure 201980098501

Various embodiments described herein provide a cover plate for independent control of plasma density and gas distribution within the interior space of a chamber. The cover assembly includes a gas distribution assembly including a plurality of diffuser plates, a portion of which is separated by a dielectric plate, wherein each diffuser plate of the plurality of diffuser plates includes a diffuser plate formed in a first diffuser plate. A groove in the surface and one or more apertures formed between a surface of the groove and a second surface opposite the first surface.

Figure 201980098501

Description

Large area high density plasma processing chamber for flat panel display
Background
FIELD
Various embodiments of the present disclosure generally relate to processing chambers, such as Plasma Enhanced Chemical Vapor Deposition (PECVD) chambers. More particularly, embodiments of the present disclosure relate to lid assemblies for processing chambers.
Description of the Related Art
In the manufacture of solar panels or flat panel displays, a number of processes are employed to deposit thin films on substrates, such as semiconductor substrates, solar panel substrates, and Liquid Crystal Display (LCD) and/or Organic Light Emitting Diode (OLED) substrates, to form electronic devices on the substrates. Deposition is generally accomplished by introducing a precursor gas into a chamber having a substrate disposed on a temperature controlled substrate support. The precursor gases are typically directed through a gas distribution plate located near the top of the chamber. Precursor gases in the chamber may be excited (e.g., excited) into a plasma by applying Radio Frequency (RF) power to a conductive showerhead disposed in the chamber from one or more RF sources coupled to the chamber. The excited gas reacts to form a material layer on a surface of a substrate positioned on the temperature controlled substrate support.
Today, the surface area of substrates used to form electronic devices is typically in excess of 1 square meter in size. It is difficult to achieve film thickness uniformity on these substrates. As the substrate size increases, film thickness uniformity becomes more difficult. Traditionally, plasma is formed in conventional chambers for ionizing gas atoms and forming radicals of the deposition gas, which is useful for depositing film layers on substrates of this size using inductively coupled plasma devices. Recently, there has been a focus on studying inductively coupled plasma devices used in the past for deposition on circular substrates or wafers for deposition processes for these large substrates. However, inductive coupling utilizes dielectric materials as structural support members. These dielectric materials do not have the structural strength to withstand the structural loads due to the presence of atmospheric pressure to one side of the large area structural portion of the chamber on the atmospheric side of the chamber and the vacuum pressure conditions on the other side of the chamber, as used in conventional chambers for these larger substrates. Therefore, inductively coupled plasma systems have been developed for plasma processing of large area substrates. However, process uniformity (e.g., deposition thickness uniformity over large substrates) is not ideal.
Accordingly, there is a need in the art for a chamber lid assembly for use on large area substrates that is configured to improve film thickness uniformity across the substrate deposition surface.
Disclosure of Invention
Various embodiments described herein provide a cover plate for a chamber for independent control of plasma density and gas distribution within an interior space of the chamber. In one embodiment, the lid assembly includes a gas distribution assembly including a plurality of diffusion plates, a portion of the diffusion plates separated by a dielectric plate, wherein each diffusion plate of the plurality of diffusion plates includes a slot formed in a first surface and one or more apertures formed between a surface of the slot and a second surface opposite the first surface.
In another embodiment, the lid plate includes a gas distribution assembly including a plurality of diffusion plates, a portion of the plurality of diffusion plates separated by a plurality of dielectric plates and a plurality of separation plates, wherein each diffusion plate of the plurality of diffusion plates includes a slot formed in a first surface and one or more apertures formed between a surface of the slot and a second surface opposite the first surface.
In yet another embodiment, the lid plate includes a gas distribution assembly including a plurality of diffuser plates, wherein the plurality of diffuser plates includes a plurality of inner diffuser plates and an outer diffuser plate on an opposite side of the inner diffuser plate, and wherein the plurality of inner diffuser plates are separated by one or more dielectric plates and a plurality of divider plates, and each diffuser plate of the plurality of diffuser plates includes a slot formed in a first surface and one or more apertures formed between a surface of the slot and a second surface opposite the first surface.
Drawings
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
FIG. 1 is a schematic cross-sectional view of a chamber according to one embodiment.
FIG. 2 is a schematic cross-sectional view of a plate according to one embodiment.
Fig. 3A is a schematic perspective view of a plate according to one embodiment.
FIG. 3B is a negative perspective view of a plate according to one embodiment.
Fig. 4 is a schematic bottom view of a plate according to an embodiment.
Fig. 5 is a schematic bottom view of one implementation of a cover plate.
Fig. 6A and 6B are sectional views of the cap plate of fig. 5.
Fig. 7 is an enlarged cross-sectional view of the cover plate from fig. 6A.
Fig. 8 is a plan view of the back surface of the diffuser plate.
Fig. 9A to 9C are sectional views from fig. 8, showing various structures of the diffusion plate.
Fig. 10 is a schematic bottom view of another implementation of a cover plate.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
Detailed Description
Various embodiments described herein provide a lid assembly for a chamber for independent control of plasma density and gas distribution within an interior space of the chamber. The lid assembly includes a plasma generation system and a gas distribution assembly. The plasma generation system includes a plurality of dielectric plates having a bottom surface oriented relative to a vacuum pressure and a top surface operable to be oriented relative to an atmospheric pressure. One or more coils are positioned on or over the plurality of dielectric slabs. The gas distribution assembly includes a first diffuser and a second diffuser. The first diffuser includes a plurality of first passages intersecting a plurality of second passages of the second diffuser.
Fig. 1 is a schematic cross-sectional view of a chamber 100, such as a PECVD chamber, that may benefit from the various embodiments described herein. Suitable chambers are available from Applied Materials, Inc., of Santa Clara, Calif. It should be understood that the system described below is an exemplary chamber, and that other chambers (including chambers from other manufacturers) may be used or modified together to implement aspects of the present disclosure. The chamber 100 includes a chamber body 104, a lid assembly 106, and a substrate support assembly 108. A lid assembly 106 is disposed at an upper end of the chamber body 104.
The substrate support assembly 108 is at least partially disposed within the interior volume of the chamber body 104. The substrate support assembly 108 includes a substrate support 110 and a shaft 112. The substrate support 110 has a support surface 118 for supporting the substrate 102. In one embodiment, which can be combined with various other embodiments described herein, the substrate 102 is a large area substrate, such as a substrate having a surface area of about 1 square meter or more. However, the substrate 102 is not limited to any particular size or shape. In one aspect, the term "substrate" refers to any polygonal, square, rectangular, curved, or other non-circular workpiece, such as a glass or polymer substrate used in the manufacture of, for example, flat panel displays.
The substrate support 110 typically includes a heating element (not shown). The substrate support 110 is movably disposed within the interior volume of the chamber body 104 by a shaft 112 that extends through the chamber body 104, wherein the shaft 112 is coupled to a substrate support drive system 114. The substrate support drive system 114 moves the substrate support 110 between a raised processing position (as shown) and a lowered position, which facilitates transfer of substrates into and out of the interior volume of the chamber body 104 through an opening 116 formed through the chamber body 104. In one embodiment, which may be combined with various other embodiments described herein, the substrate support drive system 114 rotates the shaft 112 and the substrate support 110.
The lid assembly 106 includes a lid plate 122 disposed at an upper end of the chamber body 104. The lid 122 includes a gas distribution assembly 124 and a plasma generation system 126. The gas distribution assembly 124 includes one or more first diffuser inlets 130 disposed in a first diffuser 128 in the cover plate 122. In one embodiment, which may be combined with various other embodiments described herein, the cover plate 122 includes an aluminum-containing material. In one embodiment, which may be combined with other embodiments described herein, the gas distribution assembly 124 includes one or more second diffuser inlets (shown in fig. 3A and 3B) coupled to a second diffuser 136 disposed in the cover plate 122. The one or more first diffuser inlets 130 may be coupled to a first gas source 134. Each first diffuser inlet 130 of the one or more first diffuser inlets 130 is in fluid communication with a first channel (shown in fig. 3B) of the first diffuser 128. One or more second diffuser inlets (shown in fig. 3A and 3B) may be coupled to a second gas source 138. The one or more second diffuser inlets (shown in fig. 3A and 3B) are in fluid communication with the second passages (shown in fig. 3B) of the second diffuser 136. In some embodiments, the first gas source 134 provides the same gas as the second gas source 138.
The first diffuser 128 delivers one or more first gases from the first gas source 134 to the processing region 120 between the bottom surface 160 of the lid plate 122 and the substrate support 110. One or more first gases are provided to the processing region 120 through the plurality of first apertures (shown in FIG. 4) of each first channel (shown in FIG. 3B) of the first diffuser 128. A flow controller 141, such as a Mass Flow Control (MFC) device, is disposed between each of the one or more first diffuser inlets 130 and the first gas source 134 to control the flow rate of the first gas from the first gas source 134 to each of the first passages (shown in fig. 3B), and thereby provide independent control of the first gas flow in the processing region 120. The one or more second gases are provided to the processing region 120 through the plurality of second apertures (shown in fig. 4) of each second channel (shown in fig. 3B) of the second diffuser 136. A flow controller 141 is disposed between each of the one or more second diffuser inlets (shown in fig. 3A and 3B) and the second gas source 138 to control the flow rate of the second gas from the second gas source 138 to each of the second channels (shown in fig. 3B) and thereby provide independent control of the flow of the second gas in the processing region 120. The pump 155 is in fluid communication with the treatment region 120. The pump 155 is operable to control the pressure within the processing region 120 and to exhaust gases and byproducts from the processing region 120. In one embodiment, each of the first gas and the second gas is the same gas.
The plasma generation system 126 includes one or more cavities 140 disposed in parallel in the lid plate 122. Each cavity 140 of the one or more cavities 140 includes a recess for a plurality of dielectric plates 150 (shown in figures 2-4). Each cavity 140 of the one or more cavities 140 includes one or more coils 142 positioned on or over a plurality of dielectric slabs 150. The plurality of dielectric plates 150 provide a physical barrier with structural strength to withstand structural loads generated in the presence of atmospheric pressure in the one or more chambers 140 and vacuum pressure within the interior space of the chamber body 104. Each dielectric plate 150 of the plurality of dielectric plates 150 includes a bottom surface 151 and a top surface 153 oriented opposite the bottom surface 151. The bottom surface 151 is oriented relative to (i.e., toward) the processing region 120 such that the bottom surface 151 of each of the dielectric plates 150 is exposed to a first pressure, such as a vacuum pressure, within the processing region 120. The top surface 153 is oriented opposite (i.e., away from) the processing region 120 such that the top surface 153 of each dielectric plate 150 of the dielectric plates 150 is exposed to a second pressure, such as atmospheric pressure, outside the processing region 120. In one embodiment, which may be combined with various other embodiments described herein, the first pressure and the second pressure are different.
In one embodiment, which may be combined with various other embodiments described herein, the dielectric plate comprises aluminum oxide (Al)2O3) Aluminum nitride (AlN), quartz, zirconium dioxide (ZrO)2) Zirconium nitride (ZrN), and glass materials. Each coil 142 has an electrical input terminal 144 connected to a power source 152 and an electrical output terminal 146 connected to a ground 154. In one embodiment, which may be combined with other embodiments described herein, each coil 142 is connected to a power supply 152 through a matching box 148 having matching circuitry for adjusting an electrical characteristic (such as impedance) of the coil 142. Each coil 142 is configured to generate an electromagnetic field that excites at least one of more of the first gas and the second gas into an inductively coupled plasma. The independent connection of each coil 142 of each of the one or more cavities 140 to a respective power source 152 allows for independent control of the power level and frequency provided to each coil 142. Independent control of the power level and frequency supplied to each coil 142 allows for independent control of the density of the inductively coupled plasma in the processing regions 156a, 156b, 156c, 156d (collectively processing regions 156) corresponding to each coil 142. A controller 158 is coupled to the chamber 100 and is configured to control aspects of the chamber 100 during processing.
Fig. 2 is a schematic cross-sectional view of the cover plate 122. Fig. 2 shows the one or more first diffuser inlets 130 of the first diffuser 128 of the gas distribution assembly 124, as well as the one or more cavities 140, each coil 142, each electrical input terminal 144, each electrical output terminal 146, and the recesses 201 of the plurality of dielectric plates 150 for the plasma generation system 126. In one embodiment, which may be combined with various other embodiments described herein, the lid assembly 106 includes a heat exchange system including a plurality of fluid channels (shown in fig. 3B) that may be coupled to a heat exchanger (not shown). A heat exchanger, such as a chiller, is in fluid communication with each fluid channel via a fluid inlet 202 and a fluid outlet 204 (shown in fig. 3B) of the plurality of fluid channels such that the cover plate 122 is maintained at a predetermined temperature. Each coil 142 has one or more turns.
Figure 3A is a schematic perspective view of the lid plate 122 without the plurality of dielectric plates 150 and each coil 142. Figure 3B is a negative perspective view of the lid plate 122 without the plurality of dielectric plates 150 and the coil 142. The cover plate 122 includes a plurality of first channels 302. Each of the first channels 302 is disposed or formed in the cover plate 122. Each of the plurality of first channels 302 is disposed adjacent to one of the plurality of recesses 201. Each recess 201 of the plurality of recesses 201 is between two adjacent first channels 302 provided in the cover plate 122. Each of the first passages 302 is in fluid communication with at least one of the one or more first diffuser inlets 130.
In one embodiment, which may be combined with other embodiments described herein, the cover plate 122 includes a plurality of second channels 304 disposed or formed in the cover plate 122. Each second channel of the plurality of second channels 304 is disposed between two adjacent cavities 140 of the one or more cavities 140. Each second passage 304 of the plurality of second passages 304 is in fluid communication with at least a second diffuser inlet of one or more second diffuser inlets 306 formed in the cover plate 122. In another embodiment, which may be combined with various other embodiments described herein, the cover plate 122 includes a plurality of fluid channels 308 that may be coupled to a heat exchange system of a heat exchanger (not shown). A heat exchanger, such as a chiller, is in fluid communication with the plurality of fluid channels 308 via the fluid inlet 202 and the fluid outlet 204. A plurality of fluid channels 308 are disposed adjacent to the one or more cavities 140 and the outer recess of recess 201.
Fig. 4 is a schematic bottom view of the cover plate 122. As shown in fig. 4, each of the first channels 302 intersects each of the second channels 304. In one embodiment, which can be combined with other embodiments described herein, each of the first channels 302 is orthogonal to each of the second channels 304. Each of the dielectric plates 150 is disposed adjacent to a first channel 302 and adjacent to at least one second channel 304 of the second channels 304. Each of the plurality of first passages 302 includes a plurality of first apertures 402 extending through the cover plate 122. The flow controller 141 controls the flow rate of the first gas from the first gas source 134 through the plurality of first apertures 402. The control of the flow rate of the first gas provides independent control of the first gas flow in the first zones 406a, 406b, 406c, 406d, 406e, 406f, 406g, 406h, 406i (collectively referred to as first zones 406) of the processing region 120 corresponding to each of the plurality of first channels 302. In various embodiments having the second diffuser 136, which may be combined with other various embodiments described herein, each of the plurality of second passages 304 includes a plurality of second apertures 404 extending through the cover plate 122. The flow controller 141 controls the flow rate of the second gas from the second gas source 138 through the plurality of second apertures 404. The control of the flow rate of the second gas provides independent control of the second gas flow in the second zone 408a, 408b, 408c (collectively referred to as the second zone 408) of the processing region 120 corresponding to each of the plurality of second channels 304.
Fig. 5 is a schematic bottom view of one implementation of the cover plate 122. The cover plate 122 in fig. 5 schematically illustrates the configuration of the bottom surface 160 of the cover plate 122. Although the first and second regions 406, 408 are not shown, the cover plate 122 may include one or more regions as described above.
The cover plate 122 includes a plurality of diffuser plates, shown as an outer diffuser plate 500 and an inner diffuser plate 505. Each of the inner diffuser plates 505 is separated by and/or between the dielectric plates 150 and/or the separator plates 510 and/or the inner diffuser plates 505 are separated by and/or between the dielectric plates 150 and/or the separator plates 510. Each of the outer diffuser plates 500 has a dielectric plate 150 and one or more partition plates 510 on one side of the outer diffuser plate 500.
Each of the outer diffuser plate 500, the inner diffuser plate 505, and the separator plate 510 may be made of a conductive material such as aluminum.
In this embodiment, each of the plurality of partition plates 510 and the outer and inner diffuser plates 500 and 505 includes a plurality of fasteners 515 and 520, respectively. Each of the plurality of fasteners 515 and 520 may be made of a ceramic material or a metallic material. Each of the outer diffuser plate 500 and the inner diffuser plate 505 may be unitary (i.e., a one-piece structure), or each of the outer diffuser plate 500 and the inner diffuser plate 505 may include multiple pieces. Likewise, the dielectric plate 150 may comprise a single piece of material or comprise multiple plates. In embodiments where the dielectric plate 150 is a plurality of plates, each of the dielectric plates 150 may be coupled to the cover plate 122 and/or to the separator plate 510 and/or the outer and inner diffuser plates 500 and 505 using fasteners (not shown).
Each of the outer diffuser plate 500 and the inner diffuser plate 505 includes one or more apertures 525 (e.g., first apertures 402). Each orifice 525 of the one or more orifices 525 is in fluid communication with a respective first channel 302 of the plurality of first channels 302 (also shown in fig. 3B). In some embodiments, each of the splitter plates 510 includes one or more apertures 530 (e.g., second holes 404). Each of the one or more apertures 530 of the splitter plate 510 is in fluid communication with a respective second channel 304 of the plurality of second channels 304 (also shown in fig. 3B).
Fig. 6A and 6B are cross-sectional views of the cover plate 122 from fig. 5. In fig. 6A, a portion of the outer diffuser plate 500 and the inner diffuser plate 505 are shown along with a portion of the separator plate 510 between the outer diffuser plate 500 and the inner diffuser plate 505. In fig. 6B, one inner diffuser plate 505 of the plurality of inner diffuser plates 505 is shown along the length direction of the inner diffuser plate 505.
Fig. 7 is an enlarged cross-sectional view of the cover plate 122 from fig. 6A. One inner diffuser plate 505 of the plurality of inner diffuser plates 505 and portions of two divider plates 510 are shown. The inner diffuser plate 505 includes a groove 700 in fluid communication with one of the first channels 302 of the plurality of first channels 302 and one or more orifices 525. Although not shown, the other inner diffuser plates 505 may be similarly configured. Further, the outer diffuser plate 500 includes a slot 700 and one or more apertures 525.
The inner diffuser plate 505 is coupled to the body 705 of the cover plate 122 by fasteners 520. Each fastener 520 is positioned in a respective counter sink bore 710 on opposite sides of the slot 700 and the one or more apertures 525. Similarly, divider plates 510 are coupled to main body 705 by fasteners 715 (only one shown). The fastener 715 is disposed in the counter bore 720. The fasteners 715 and 520 extend into respective counterbores to a (bottom) surface 725A of the divider plate 510 and a (bottom) surface 725B of the inner diffuser plate 505. Surfaces 725A and 725B are planar or flat such that the surfaces are flush with each other. In addition, the extension of the fasteners 715 and 520 in the respective counterbores presents a flat or planar bottom surface (i.e., no protrusions or depressions), which facilitates more uniform plasma formation. Although not shown, each of the dielectric plates 150 (i.e., the bottom surface 151) is also flush with the surface 725B.
The groove 700 and the first channel 302 are fluidly sealed by an elastomeric seal 730 positioned in a groove 735 formed in the body 705. The resilient seal 730 is sized to surround the groove 700 and the first channel 302. The resilient seal 730 may be an elongated O-ring. The elastomeric seal 730 is pressed against the sealing surface 740 of the inner diffuser plate 505. The sealing surface 740 is smoother than the rest of the surface 725B and back surface 745, as well as other outer surfaces of the inner diffuser plate 505. In some embodiments, the sealing surface 740 comprises a surface finish of about 16 (root mean square (RMS)) or 16 micro-inches (average surface roughness (Ra)).
Fig. 8 is a plan view of the back surface 745 of the diffuser plate 800, and the diffuser plate 800 may be one outer diffuser plate 500 of a plurality of outer diffuser plates 500 or one inner diffuser plate 505 of a plurality of inner diffuser plates 505.
The diffuser plate 800 includes a length 805 that is greater than the length or width of the substrate (not shown). In one example, the length 805 is about 5 feet to about 6 feet, or more. Sealing surface 740 is shown surrounding groove 700. Further, a plurality of holes 810 are positioned along the length 805 of the diffuser plate 800, each hole adapted to receive a fastener 520 (shown in FIG. 7). Hole(s)810 are formed between the edge 815 of the diffuser plate 800 and the sealing surface 740. Each fastener 520 is provided with a tool interface (such as with a screwdriver, hex wrench, or the like)
Figure BDA0003471557760000091
A hex head or socket interface used with drivers and similar tools used with drills sold).
The aperture 525 is not shown in this view, but is formed in the slot 700 at each aperture location 825 of the plurality of aperture locations 825. Length 820 indicates where the orifice 525 begins and ends along the slot 700. Length 820 is less than length 805. The orifice location 825 is located within the length 820. The orifice locations 825 may be equally or unequally spaced along the length 820. The spacing between the orifice locations 825 may be about 0.25 inches to about 1 inch.
Fig. 9A-9C are cross-sectional views from fig. 8 showing various configurations of the diffuser plate 800. In particular, fig. 9A-9C illustrate variations in the profile of the slot 700 and/or the aperture 525.
In fig. 9A, a diffuser plate 900A is shown and includes a groove 700 having a semi-circular profile. Further, three apertures 525 are shown formed between the first surface 905 and the surface 910 of the slot 700. The surface 910 of the slot 700 is an arcuate or curved surface. Although three apertures 525 are shown, the number of apertures may be from one to five, or more, at each of the aperture locations 825 shown in fig. 8.
Fig. 9A shows an orifice 525 that includes a central orifice 915 and two outer orifices 920. The diameters of the central aperture 915 and the outer aperture 920 may be the same or different. One or both of the central aperture 915 and the outer aperture 920 may have a diameter of about 0.008 inches to about 0.04 inches. The outer apertures 920 are the same or substantially the same length, while the central aperture 915 is shorter in length than the outer apertures 920.
The central aperture 915 is disposed along an axis 925 that is at an angle of about 90 degrees to the plane of the first face 905. The outer aperture 920 is at an acute angle 930 to the axis 925. The acute angle 930 may be about 20 degrees to about 50 degrees, for example about 35 degrees to about 45 degrees, such as about 40 degrees, from the axis 925.
Although not shown, the other apertures 525 at the other aperture locations 825 along the length 820 (fig. 8) may be the same as or different from the central aperture 915 and the outer aperture 920 shown in fig. 9A. Further, surface 910 may be constant along length 805 (fig. 8). However, surface 910 may differ along length 805. For example, the slots 700 may be deeper at a center portion of the diffuser plate 800 and shallower at end portions of the diffuser plate 800 along the length 805.
Fig. 9B shows a diffuser plate 900B that is substantially similar to the diffuser plate 900A shown in fig. 9A, with the following differences. The slot 700 has a square profile and the outer aperture 920 includes a flared portion 935. The flared portion 935 connects the outer aperture 920 to the surface 910 of the slot 700. Slot 700 includes two sides 940 extending at orthogonal angles from surface 910.
FIG. 9C illustrates a diffuser plate 900C that is substantially similar to the diffuser plate 900A illustrated in FIG. 9A, with the following differences. The diffuser plate 900C includes a single aperture 945 at the aperture location 825. The structure of the diffuser plate 900C may be advantageously used as the outer diffuser plate 500 shown in fig. 5. The single aperture 945 may be angled at an acute angle 930 to direct gas toward the center of the substrate 102 (shown in fig. 1).
Fig. 10 is a schematic bottom view of another implementation of the cover plate 122. Although the outer diffuser plate 500 and the inner diffuser plate 505 are shown in other figures as a single, unitary piece, fig. 10 shows the cover plate 122 including a plurality of segmented diffuser plates, shown as a first plurality of outer diffuser plates 1000 and a second plurality of inner diffuser plates 1005. The first plurality of outer diffuser plates 1000 and the second plurality of inner diffuser plates 1005 are positioned in rows 1010. Each row 1010 is substantially parallel to the other rows 1010.
The first plurality of outer diffuser plates 1000 includes two or more diffuser segments 1015 and the second plurality of inner diffuser plates 1005 includes two or more diffuser segments 1020. Each of the diffuser segments 1015 and 1020 may be configured similar to the diffuser plate 800 shown in fig. 8 and the diffuser plates 900A-900C shown in fig. 9A-9C, except for being smaller in length. The shorter length of the outer and inner diffuser plates 1000 and 1005 may minimize the effects of thermal expansion and contraction of the outer and inner diffuser plates 1000 and 1005. Further, the gas flow through each of the diffuser segments 1015 and 1020 may be independently controlled.
In general, a chamber lid assembly for independent control of plasma density and gas distribution within an interior space of a chamber is provided. Independent control of the power level and frequency supplied to each coil allows the density of the inductively coupled plasma to be independently controlled in the processing region corresponding to each coil. The control of the flow rate of the first gas provides independent control of the first gas flow in a first zone of the processing region corresponding to each of the plurality of first channels. The control of the flow rate of the second gas provides independent control of the second gas flow in a second zone of the processing region corresponding to each of the plurality of second channels. In some embodiments, a uniform gas flow over the treatment area may be desired. However, in other embodiments, the gas flow may not be uniform across the processing region. Due to certain physical structures and/or geometries of the chamber, non-uniform gas flow may be desired.
While the foregoing is directed to embodiments of the present disclosure, numerous other and further embodiments of the disclosure are contemplated without departing from the basic scope thereof, and the scope thereof is determined by the scope of the appended claims.

Claims (15)

1. A cover plate, comprising:
a gas distribution assembly comprising
A plurality of diffuser plates, a portion of the plurality of diffuser plates separated by a dielectric plate, wherein each diffuser plate of the plurality of diffuser plates comprises a slot formed in a first surface and one or more orifices formed between a surface of the slot and a second surface opposite the first surface.
2. The cover plate of claim 1, wherein the plurality of diffuser plates further comprises a plurality of inner diffuser plates and one outer diffuser plate on opposite sides of the inner diffuser plates.
3. The cover plate of claim 2, wherein each inner diffuser plate of the plurality of inner diffuser plates comprises a plurality of orifice locations along a length of the inner diffuser plate, each orifice location of the plurality of orifice locations having the one or more orifices.
4. The cover plate of claim 3 wherein the outer diffuser plate includes a plurality of orifice locations along a length of the outer diffuser plate and each orifice location of the plurality of orifice locations has a single orifice.
5. The cover plate of claim 2 wherein the one or more orifices comprise a central orifice and two outer diffusion holes on opposite sides of the central orifice.
6. The cover sheet of claim 5 wherein the two outer diffusion holes are angled with respect to the central diffusion hole.
7. The cover plate of claim 1, wherein the groove comprises a semi-circular profile.
8. The cover plate of claim 1, wherein the slot comprises a rectangular profile.
9. The decking of claim 1, wherein the grooves include a depth that varies along the length of the grooves.
10. A cover plate, comprising:
a gas distribution assembly comprising a plurality of diffusion plates, a portion of the plurality of diffusion plates separated by a plurality of dielectric plates and a plurality of separation plates, wherein each diffusion plate of the plurality of diffusion plates comprises a slot formed in a first surface and one or more orifices formed between a surface of the slot and a second surface opposite the first surface.
11. The cover sheet of claim 10 wherein each of the plurality of diffuser plates is oriented in parallel rows and each of the plurality of separator plates is oriented in columns.
12. The cover plate of claim 10, wherein the groove comprises a semi-circular profile.
13. The cover plate of claim 10, wherein the slot comprises a rectangular profile.
14. The decking of claim 10, wherein the grooves include a depth that varies along the length of the grooves.
15. A cover plate, comprising:
a gas distribution assembly comprising a plurality of diffusion plates, wherein the plurality of diffusion plates comprises a plurality of inner diffusion plates and one outer diffusion plate on an opposite side of the plurality of inner diffusion plates, and wherein the plurality of inner diffusion plates are separated by one or more dielectric plates and a plurality of divider plates, and each of the plurality of diffusion plates comprises a slot formed in a first surface and one or more apertures formed between a surface of the slot and a second surface opposite the first surface.
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