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TWI899112B - High density plasma enhanced chemical vapor deposition chamber - Google Patents

High density plasma enhanced chemical vapor deposition chamber

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Publication number
TWI899112B
TWI899112B TW109138750A TW109138750A TWI899112B TW I899112 B TWI899112 B TW I899112B TW 109138750 A TW109138750 A TW 109138750A TW 109138750 A TW109138750 A TW 109138750A TW I899112 B TWI899112 B TW I899112B
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Taiwan
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support
showerhead
support member
conduit
gas
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TW109138750A
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Chinese (zh)
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TW202136569A (en
Inventor
瑟瑞恩卓拉坎尼米哈里 賽迪
泰景 元
孫光偉
壽永 崔
李永東
松本隆之
山傑D 葉達夫
羅賓L 帝那
Original Assignee
美商應用材料股份有限公司
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Publication of TW202136569A publication Critical patent/TW202136569A/en
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Publication of TWI899112B publication Critical patent/TWI899112B/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present disclosure relates to methods and apparatus for showerhead for a deposition chamber. In one embodiment, a showerhead for a plasma deposition chamber is provided that includes a plurality of perforated tiles each coupled to one or more of a plurality of support members, and a plurality of inductive couplers within the showerhead, wherein one inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated tiles, wherein the support members provide precursor gases to a volume formed between the inductive couplers and the perforated tiles.

Description

高密度電漿強化的化學氣相沉積腔室High-density plasma enhanced chemical vapor deposition chamber

本揭露案的實施例大致關於一種用於處理大面積基板之裝置。更特定而言,本揭露案的實施例關於用於設備製作的化學氣相沉積系統。Embodiments of the present disclosure generally relate to an apparatus for processing large-area substrates. More particularly, embodiments of the present disclosure relate to a chemical vapor deposition system for device fabrication.

在太陽能面板及平板面板顯示器的製造中,利用許多處理以在例如半導體基板、太陽能面板基板及液晶顯示器(LCD)及/或有機發光二極體(OLED)基板的基板上沉積薄膜,以在其上形成電子設備。沉積大致藉由引導前驅物氣體至具有基板佈置於溫度控制的基板支撐件上的真空腔室中來完成。前驅物氣體通常藉由座落於接近真空腔室的頂部的氣體分配板引導。在真空腔室中的前驅物氣體可藉由從耦合至腔室的一或更多RF源施加射頻(RF)功率至佈置於腔室中的導電噴淋頭而能量化(例如,激發)成電漿。激發的氣體反應以在定位於溫度控制的基板支撐件上的基板的表面上形成材料的層。In the manufacture of solar panels and flat panel displays, a number of processes are utilized to deposit thin films onto substrates, such as semiconductor substrates, solar panel substrates, and liquid crystal display (LCD) and/or organic light-emitting diode (OLED) substrates, to form electronic devices thereon. Deposition is generally accomplished by introducing a precursor gas into a vacuum chamber having a substrate disposed on a temperature-controlled substrate support. The precursor gas is typically introduced via a gas distribution plate located near the top of the vacuum chamber. The precursor gas in the vacuum chamber can be energized (e.g., excited) into a plasma by applying radio frequency (RF) power from one or more RF sources coupled to the chamber to a conductive showerhead disposed in the chamber. The excited gas reacts to form a layer of material on the surface of a substrate positioned on a temperature-controlled substrate support.

用於形成電子設備的基板的尺寸在表面積上目前常規地超過1平方公尺。橫跨此等基板的膜厚度均勻性難以達成。隨著基板尺寸增加,膜厚度均勻性變成甚至更困難的。傳統上,在傳統腔室中形成電漿用於離子化氣體原子且形成沉積氣體的自由基,而實用於使用電容耦合的電極安排在此類尺寸的基板上沉積膜層。最近,歷史上利用於在圓形基板或晶圓上沉積的電感耦合的電漿安排的利益正探索於在此等大型基板的沉積處理中使用。然而,電感耦合利用介電材料作為結構支撐部件,且此等材料不具有結構強度以忍受藉由大氣壓力在其大氣側上腔室的大面積結構部分的一側上,及對在其另一側上的真空壓力條件下的存在建立的結構負載,此在傳統腔室中用於此等大型基板。因此,電感耦合的電漿系統已經歷發展用於大面積基板電漿處理。然而,例如橫跨大基板的沉積厚度均勻性的處理均勻性低於理想。The size of substrates used to form electronic devices now routinely exceeds 1 square meter in surface area. Achieving uniform film thickness across these substrates is difficult. As substrate size increases, film thickness uniformity becomes even more challenging. Traditionally, capacitively coupled electrode arrangements have been used to deposit films on substrates of this size, using plasmas formed in conventional chambers to ionize gas atoms and form radicals from the deposition gas. Recently, inductively coupled plasma arrangements, historically utilized for deposition on round substrates or wafers, are being explored for use in deposition processes on these large substrates. However, inductive coupling utilizes dielectric materials as structural support components, and these materials do not have the structural strength to withstand the structural loads created by atmospheric pressure on one side of the chamber's large structural portion above the atmosphere, and vacuum pressure conditions on the other side, as used in conventional chambers for such large substrates. Consequently, inductively coupled plasma systems have been developed for plasma processing of large substrates. However, process uniformity, such as deposition thickness uniformity across large substrates, has been less than ideal.

因此,存在對電感耦合的電漿源使用於大面積基板而配置成改進橫跨基板的沉積表面的膜厚度均勻性之需求。Therefore, a need exists for an inductively coupled plasma source for use with large area substrates that is configured to improve film thickness uniformity across the deposition surface of the substrate.

本揭露案的實施例包括用於噴淋頭的方法及裝置,及具有噴淋頭的電漿沉積腔室,能夠在大面積基板上形成一或更多層膜。Embodiments of the present disclosure include methods and apparatus for a showerhead, and a plasma deposition chamber having a showerhead, capable of forming one or more films on large area substrates.

在一個實施例中,提供一種用於電漿沉積腔室之噴淋頭,包括複數個穿孔的磚,其各者耦合至複數個支撐構件之一或更多者,及在噴淋頭之中的複數個電感耦合器,其中複數個電感耦合器之一個電感耦合器相對應至複數個穿孔的磚之一者,其中支撐構件提供前驅物氣體至形成於電感耦合器及穿孔的磚之間的空間。In one embodiment, a showerhead for a plasma deposition chamber is provided, comprising a plurality of perforated bricks, each coupled to one or more of a plurality of support members, and a plurality of inductive couplers within the showerhead, wherein one of the plurality of inductive couplers corresponds to one of the plurality of perforated bricks, wherein the support members provide a precursor gas to a space formed between the inductive couplers and the perforated bricks.

在另一實施例中,提供一種電漿沉積腔室,包括噴淋頭,具有複數個穿孔的磚,相對應至複數個穿孔的磚之一或更多者的電感耦合器,及用於支撐穿孔的磚之各者的複數個支撐構件,其中支撐構件之一或更多者提供前驅物氣體至形成於電感耦合器及穿孔的磚之間的空間。In another embodiment, a plasma deposition chamber is provided that includes a showerhead having a plurality of perforated bricks, an inductive coupler corresponding to one or more of the plurality of perforated bricks, and a plurality of support members for supporting each of the perforated bricks, wherein one or more of the support members provides a precursor gas to a space formed between the inductive coupler and the perforated brick.

在另一實施例中,提供一種電漿沉積腔室,包括噴淋頭,具有複數個穿孔的磚,其各者耦合至複數個支撐構件之一或更多者,複數個介電板,複數個介電板之一者相對應至複數個穿孔的磚之一者,及複數個電感耦合器,其中複數個電感耦合器之一個電感耦合器相對應至複數個介電板之一者,其中支撐構件提供前驅物氣體至形成於電感耦合器及穿孔的磚之間的空間。In another embodiment, a plasma deposition chamber is provided, comprising a showerhead having a plurality of perforated bricks, each coupled to one or more of a plurality of support members, a plurality of dielectric plates, one of the plurality of dielectric plates corresponding to one of the plurality of perforated bricks, and a plurality of inductive couplers, one of the plurality of inductive couplers corresponding to one of the plurality of dielectric plates, wherein the support members provide a precursor gas to a space formed between the inductive couplers and the perforated bricks.

在另一實施例中,揭露一種用於在基板上沉積膜之方法,包括將前驅物氣體流至噴淋頭的複數個氣體空間,氣體空間之各者包含穿孔的磚及與分別的氣體空間電氣連通的電感耦合器,及改變至氣體空間之各者中的前驅物氣體的流動。In another embodiment, a method for depositing a film on a substrate is disclosed, comprising flowing a precursor gas to a plurality of gas spaces of a showerhead, each of the gas spaces comprising a perforated brick and an inductive coupler electrically connected to the respective gas space, and varying the flow of the precursor gas into each of the gas spaces.

本揭露案的實施例包括可操作以在大面積基板上沉積複數個層的處理系統。如此處所使用的大面積基板為基板具有大的表面積的主要側,例如具有通常約1平方公尺或更大的表面積的基板。然而,基板並非限於任何特定尺寸或形狀。在一個態樣中,「基板」一詞代表任何多邊形、方形、矩形、彎曲或者非圓形工件,例如玻璃或聚合物基板,例如在平板面板顯示器的製作中使用。Embodiments of the present disclosure include processing systems operable to deposit multiple layers onto large-area substrates. As used herein, a large-area substrate is one having a major side with a large surface area, such as a substrate having a surface area typically of about 1 square meter or greater. However, substrates are not limited to any particular size or shape. In one aspect, the term "substrate" refers to any polygonal, square, rectangular, curved, or non-circular workpiece, such as a glass or polymer substrate, such as used in the manufacture of flat panel displays.

此處,噴淋頭配置成流動通過氣體,且以數個獨立控制的區至腔室的處理空間中,以便改進在處理區中暴露至氣體的基板的表面的處理的均勻性。此外,各個區配置有氣室,在氣室及腔室的處理空間之間的一或更多穿孔的板,及專用於區或個別穿孔的板的線圈或線圈之部分。氣室形成於介電窗、穿孔的板及圍繞結構之間。各個氣室配置成允許處理氣體流至且由相對均勻流率的結果分配至,或在某些情況中為氣體定制的流率通過穿孔的板,且至處理空間中。在某些實施例中氣室具有小於在氣室之中的壓力下處理氣體形成的電漿的暗隔間的厚度的兩倍的厚度。在某些實施例中,為線圈的形狀的電感耦合器定位於介電窗後方,且其電感耦合能量通過介電窗、氣室及穿孔的板,以衝擊且支援在處理空間中的電漿。此外,在鄰接穿孔的板之間的區域中,提供額外的處理氣體流動。在各個區中及通過穿孔的板之間的區域的處理氣體的流動經控制以導致均勻或定制的氣體流動,以在基板上達成所欲的處理結果。Here, a showerhead is configured to flow gas through a process volume of a chamber in a plurality of independently controlled zones to improve the uniformity of treatment of the surface of a substrate exposed to the gas in the process zone. In addition, each zone is configured with a plenum, one or more perforated plates between the plenum and the process volume of the chamber, and a coil or portion of a coil dedicated to the zone or individual perforated plates. The plenum is formed between the dielectric window, the perforated plates, and the surrounding structure. Each plenum is configured to allow the process gas to flow and be distributed as a result of a relatively uniform flow rate, or in some cases a flow rate customized for the gas, through the perforated plates and into the process volume. In some embodiments, the plenum has a thickness that is less than twice the thickness of a dark compartment of a plasma formed by the process gas under pressure within the plenum. In certain embodiments, an inductive coupler in the form of a coil is positioned behind the dielectric window and inductively couples energy through the dielectric window, plenum, and perforated plate to impact and support the plasma in the processing volume. Additionally, additional process gas flow is provided in the region between adjacent perforated plates. The flow of process gas in each region and through the region between the perforated plates is controlled to produce a uniform or customized gas flow to achieve the desired processing results on the substrate.

本揭露案的實施例包括高密度電漿化學氣相沉積(HDP CVD)處理腔室,而可操作在基板上形成一或更多層膜。如此處所揭露的處理腔室適以傳輸在電漿中產生的能量化的前驅物氣體的物種。電漿可藉由電感耦合能量至真空下的氣體中而產生。此處所揭露的實施例可適於在美國加州聖克拉拉市的應用材料公司的子公司AKT America公司的腔室中使用。應理解此處所討論的實施例亦可在從其他製造商可取得的腔室中實施。Embodiments of the present disclosure include a high-density plasma chemical vapor deposition (HDP CVD) processing chamber operable to form one or more film layers on a substrate. The processing chamber disclosed herein is adapted to deliver energized precursor gas species generated in a plasma. The plasma may be generated by inductively coupling energy into a gas under vacuum. The embodiments disclosed herein may be adapted for use in chambers manufactured by AKT America, Inc., a subsidiary of Applied Materials, Inc., located in Santa Clara, California. It should be understood that the embodiments discussed herein may also be implemented in chambers available from other manufacturers.

第1圖根據本揭露案的一個實施例,為剖面側視圖,顯示圖示性處理腔室100。範例基板102顯示為在腔室主體104之中。處理腔室100亦包括蓋組件106,及基座或基板支撐組件108。蓋組件106佈置於腔室主體104的上部端處,且基板支撐組件108至少部分佈置於腔室主體104之中。基板支撐組件108耦合至桿110。桿110耦合至在腔室主體104之中垂直(以Z方向)移動基板支撐組件108的驅動112。在第1圖中所顯示的處理腔室100的基板支撐組件108為在處理位置中。然而,基板支撐組件108可在Z方向中降低至鄰接傳送通口114的位置。當降低時,可移動地佈置於基板支撐組件108中的舉升銷116接觸腔室主體104的底部118。當舉升銷116接觸底部118時,舉升銷116無法再與基板支撐組件108向下移動,且維持基板102在相對固定的位置中,隨著基板支撐組件108的基板接收表面120從此向下移動。此後,端效器或機械手臂葉片(未顯示)插入傳送通口114,且在基板102及基板接收表面120之間,以傳送基板102離開腔室主體104。FIG. 1 is a cross-sectional side view of an illustrative processing chamber 100 according to one embodiment of the present disclosure. An example substrate 102 is shown within a chamber body 104. The processing chamber 100 also includes a lid assembly 106 and a pedestal or substrate support assembly 108. The lid assembly 106 is disposed at an upper end of the chamber body 104, and the substrate support assembly 108 is at least partially disposed within the chamber body 104. The substrate support assembly 108 is coupled to a rod 110. The rod 110 is coupled to a drive 112 that moves the substrate support assembly 108 vertically (in the Z direction) within the chamber body 104. The substrate support assembly 108 of the processing chamber 100 shown in FIG. 1 is in a processing position. However, the substrate support assembly 108 can be lowered in the Z direction to a position adjacent to the transfer opening 114. While lowered, lift pins 116 movably disposed within the substrate support assembly 108 contact the bottom 118 of the chamber body 104. Once the lift pins 116 contact the bottom 118, they can no longer move downward with the substrate support assembly 108 and maintain the substrate 102 in a relatively fixed position as the substrate receiving surface 120 of the substrate support assembly 108 moves downward therefrom. Thereafter, an end effector or robot blade (not shown) is inserted into the transfer opening 114 and between the substrate 102 and the substrate receiving surface 120 to transfer the substrate 102 out of the chamber body 104.

蓋組件106可包括放置於腔室主體104上的背板122。蓋組件106亦包括氣體分配組件或噴淋頭124。噴淋頭124從氣源傳輸處理氣體至噴淋頭124及基板102之間的處理區域126。噴淋頭124亦耦合至清潔氣源,而提供例如含氟氣體的清潔氣體至處理區域126。The lid assembly 106 may include a backing plate 122 positioned on the chamber body 104. The lid assembly 106 also includes a gas distribution assembly or showerhead 124. The showerhead 124 delivers a process gas from a gas source to a processing region 126 between the showerhead 124 and the substrate 102. The showerhead 124 is also coupled to a purge gas source that provides a purge gas, such as a fluorine-containing gas, to the processing region 126.

噴淋頭124亦作用為電漿源128。為了作用為電漿源128,噴淋頭124包括一或更多電感耦合的電漿產生部件,或線圈130。一或更多線圈130之各者可為單一線圈130、兩個線圈130或超過兩個線圈130,此後單純以線圈130敘述。一或更多線圈130之各者橫跨功率源及接地133耦合。噴淋頭124亦包括面板132,而包含複數個分散穿孔的磚134。功率源包括匹配電路或調節能力,用於調整線圈130的電氣特性。The showerhead 124 also functions as a plasma source 128. To function as the plasma source 128, the showerhead 124 includes one or more inductively coupled plasma generating components, or coils 130. Each of the one or more coils 130 can be a single coil 130, two coils 130, or more than two coils 130 and will hereinafter be referred to simply as a coil 130. Each of the one or more coils 130 is coupled across a power source and a ground 133. The showerhead 124 also includes a faceplate 132 comprising a plurality of discrete perforated bricks 134. The power source includes matching circuitry or regulation capabilities for adjusting the electrical characteristics of the coils 130.

穿孔的磚134之各者藉由複數個支撐構件136支撐。一或更多線圈130之各者或一或更多線圈130之部分定位於分別的介電板138上或上方。在蓋組件106之中佈置於介電板138上方的線圈130的範例更清楚顯示於第2A圖中。複數個氣體空間140藉由介電板138、穿孔的磚134及支撐構件136的表面來界定。一或更多線圈130之各者配置成建立電場,而在處理區域126中於氣體空間140下方隨著氣體流至氣體空間140中且通過鄰接穿孔的磚至其下方的腔室空間能量化處理氣體成為電漿,來自氣源的處理氣體透過在支撐構件136中的導管提供至氣體空間140之各者。進入且離開噴淋頭的氣體的體積或流率在噴淋頭124的不同區中控制。處理氣體的區控制藉由複數個流動控制器提供,例如第1圖中圖示的質量流量控制器142、143及144。舉例而言,至噴淋頭124的周圍或外部區的氣體的流率藉由流動控制器142、143控制,同時至噴淋頭124的中心區的氣體的流率藉由流動控制器144控制。當需要腔室清潔時,來自清潔氣源的清潔氣體流至氣體空間140之各者,且因此至處理區域126中,其中清潔氣體能量化成離子、自由基或兩者。能量化的清潔氣流通過穿孔的磚134且至處理區域126中,以便清潔腔室部件。Each of the perforated bricks 134 is supported by a plurality of support members 136. Each of the one or more coils 130, or portions of one or more coils 130, is positioned on or above a respective dielectric plate 138. An example of a coil 130 positioned above a dielectric plate 138 within the cover assembly 106 is more clearly shown in FIG. 2A. A plurality of air spaces 140 are defined by the surfaces of the dielectric plate 138, the perforated bricks 134, and the support members 136. Each of the one or more coils 130 is configured to establish an electric field that energizes the process gas into a plasma in the process region 126 below the gas space 140 as the gas flows into the gas space 140 and through adjacent perforated bricks to the chamber space below. Process gas from a gas source is provided to each of the gas spaces 140 via conduits in the support member 136. The volume or flow rate of gas entering and exiting the showerhead is controlled in different zones of the showerhead 124. Zone control of the process gas is provided by a plurality of flow controllers, such as the mass flow controllers 142, 143, and 144 shown in FIG. 1 . For example, the flow rate of gas to the periphery or outer region of the showerhead 124 is controlled by flow controllers 142, 143, while the flow rate of gas to the central region of the showerhead 124 is controlled by flow controller 144. When chamber cleaning is required, clean gas from a clean gas source flows to each of the gas spaces 140 and, thus, into the processing region 126, where the clean gas is energized into ions, free radicals, or both. The energized clean gas flows through the perforated bricks 134 and into the processing region 126 to clean the chamber components.

第2A圖為第1圖的蓋組件106之部分的放大的視圖。如以上所解釋,前驅物氣體從氣源通過由背板122形成的入口200至氣體空間140。入口200之各者耦合至形成於支撐構件136中的分別的導管205。導管205在出口開口210處提供前驅物氣體至氣體空間140。某些導管205提供氣體至兩個鄰接氣體空間140(導管205之一者以虛線顯示於第2A圖中)。流至分別的氣體空間140的氣體更清楚地顯示於第4圖中。FIG. 2A is an enlarged view of a portion of the cover assembly 106 of FIG. 1 . As explained above, precursor gas flows from a gas source through inlets 200 formed by the backing plate 122 to the gas space 140. Each of the inlets 200 is coupled to a respective conduit 205 formed in the support member 136. The conduits 205 provide the precursor gas to the gas space 140 at outlet openings 210. Some of the conduits 205 provide gas to two adjacent gas spaces 140 (one of the conduits 205 is shown in dashed lines in FIG. 2A ). The gas flow to the respective gas spaces 140 is more clearly shown in FIG. 4 .

導管205包括限流器215以控制到氣體空間140的流動。限流器215的尺寸可變化,以便控制通過的氣流。舉例而言,限流器215之各者包括特定尺寸(例如,直徑)的孔口而用以控制流動。再者,限流器215之各者的尺寸可如所需的改變,以如所需的提供更大的孔口尺寸,或更小的孔口尺寸,以控制通過的流動。The conduit 205 includes a flow restrictor 215 to control flow into the gas space 140. The size of the flow restrictor 215 can be varied to control the flow of gas therethrough. For example, each of the flow restrictors 215 includes an orifice of a specific size (e.g., diameter) to control flow. Furthermore, the size of each of the flow restrictors 215 can be varied as needed to provide a larger orifice size, or a smaller orifice size, as needed to control flow therethrough.

如第2A圖中所顯示,穿孔的磚134包括延伸通過的複數個開口218。開口218之各者與形成於覆蓋板222中的開口220對齊(同心)。複數個開口218及開口220之各者允許氣體以所欲的流率從氣體空間140流至處理區域126中,此歸因於在氣體空間140及覆蓋板222之間延伸的開口218的直徑。開口218及/或220,及/或開口218及/或220的行及列可以不同尺寸設計及/或具不同間隔,以便平均通過穿孔的磚134之各者及覆蓋板222之各者的氣體流動。或者,取決於所欲的氣體流動特性,來自開口218及/或220之各者的氣體流動可為非均勻的。As shown in FIG. 2A , the perforated brick 134 includes a plurality of openings 218 extending therethrough. Each of the openings 218 is aligned (concentric) with an opening 220 formed in the cover plate 222. The plurality of openings 218 and each of the openings 220 allow gas to flow from the gas space 140 into the processing region 126 at a desired flow rate, depending on the diameter of the openings 218 extending between the gas space 140 and the cover plate 222. The openings 218 and/or 220, and/or the rows and columns of openings 218 and/or 220, can be designed with different sizes and/or have different spacings to even out the flow of gas through each of the perforated bricks 134 and each of the cover plates 222. Alternatively, the gas flow from each of openings 218 and/or 220 may be non-uniform, depending on the desired gas flow characteristics.

覆蓋板222之各者包括環繞穿孔的磚134的側的固定部分225。各個固定部分225包括複數個開口230,而允許氣體從導管205流至次要氣室235中且接著至處理區域126中。Each of the cover plates 222 includes a fixed portion 225 that surrounds the side of the perforated brick 134. Each fixed portion 225 includes a plurality of openings 230 that allow gas to flow from the conduit 205 into the secondary plenum 235 and then into the processing area 126.

支撐構件136藉由例如螺釘或螺絲的緊固件240耦合至背板122。支撐構件136之各者以覆蓋板222的界面部分245支撐穿孔的磚134。界面部分245之各者可為壁架或擱板,而支撐周圍的部分或穿孔的磚134的邊緣。界面部分245藉由例如螺釘或螺絲的緊固件250緊固至支撐構件136。界面部分245之部分包括次要氣室235。界面部分245之各者亦支撐穿孔的磚134的周圍或邊緣。一或更多封口265用以密封氣體空間140。舉例而言,封口265為彈性材料,例如O形環封口或聚四氟乙烯(PTFE)接合密封材料。一或更多封口265可提供於支撐構件136及穿孔的磚134及覆蓋板222的固定部分225之間。覆蓋板222可如必須的移除,以替換一或更多穿孔的磚134。The support members 136 are coupled to the back plate 122 by fasteners 240, such as screws or bolts. Each of the support members 136 supports the perforated brick 134 with an interface portion 245 of the cover plate 222. Each of the interface portions 245 can be a ledge or shelf that supports a portion of the perimeter or edge of the perforated brick 134. The interface portion 245 is secured to the support member 136 by fasteners 250, such as screws or bolts. Portions of the interface portion 245 include the secondary air chamber 235. Each of the interface portions 245 also supports the perimeter or edge of the perforated brick 134. One or more seals 265 are used to seal the gas space 140. For example, seal 265 is a resilient material, such as an O-ring seal or a polytetrafluoroethylene (PTFE) joint seal. One or more seals 265 may be provided between support member 136 and perforated brick 134 and fixed portion 225 of cover plate 222. Cover plate 222 may be removed as necessary to replace one or more perforated bricks 134.

此外,支撐構件136之各者利用從其延伸的擱板270支撐介電板138(顯示於第2A圖中)。在噴淋頭124/電漿源128的實施例中,介電板138在橫向表面積上(X-Y平面)相較於整個噴淋頭124/電漿源128的表面積更小。為了支撐介電板138,利用擱板270。多重介電板138減少的橫向表面積允許使用介電材料作為真空環境及氣體空間140中的電漿及處理區域126及鄰接線圈130通常定位於其中的大氣環境之間的物理屏蔽,而不會基於大面積支撐大氣壓力負載而施予大應力於其中。Furthermore, each of the support members 136 supports the dielectric plate 138 (shown in FIG. 2A ) by means of a shelf 270 extending therefrom. In the showerhead 124/plasma source 128 embodiment, the dielectric plate 138 has a smaller lateral surface area (in the X-Y plane) than the entire showerhead 124/plasma source 128. Shelves 270 are utilized to support the dielectric plate 138. The reduced lateral surface area of the multiple dielectric plates 138 allows the dielectric material to be used as a physical shield between the vacuum environment and the plasma in the gas space 140 and the processing region 126 and the atmospheric environment in which the adjacent coil 130 is typically located without imparting large stresses therein due to the large area supporting the atmospheric pressure load.

封口265用以密封空間275(在大氣或接近大氣壓力下)遠離氣體空間140(在處理期間於毫托或更小範圍中的次大氣壓力下)。界面構件280顯示為從支撐構件136延伸,且利用緊固件285以推擠介電板138抵靠封口265及擱板270。封口265亦可用以密封介於穿孔的磚134的外部周圍及支撐構件136之間的空間。Seal 265 is used to seal space 275 (at atmospheric or near atmospheric pressure) from gas space 140 (at subatmospheric pressure in the millitorr or less range during processing). Interface member 280 is shown extending from support member 136 and utilizes fasteners 285 to push dielectric plate 138 against seal 265 and shelf 270. Seal 265 can also be used to seal the space between the outer periphery of perforated brick 134 and support member 136.

用於噴淋頭124/電漿源128的材料基於電氣特性、強度及化學穩定性之一或更多者而選擇。線圈130以導電材料製成。背板122及支撐構件136以能夠支撐支撐的部件的重量及大氣壓力負載的材料製成,而可包括金屬或其他類似的材料。背板122及支撐構件136可以非磁性材料(例如,非順磁性或非鐵磁性材料)製成,例如鋁材料。覆蓋板222亦以非磁性材料形成,例如金屬材料,例如鋁。穿孔的磚134以陶瓷材料製成,例如石英、氧化鋁或其他類似的材料。介電板138以石英、氧化鋁或藍寶石材料製成。The material used for the shower head 124/plasma source 128 is selected based on one or more of electrical properties, strength and chemical stability. The coil 130 is made of a conductive material. The back plate 122 and the support member 136 are made of a material capable of supporting the weight of the supported components and the atmospheric pressure load, and may include metal or other similar materials. The back plate 122 and the support member 136 can be made of a non-magnetic material (for example, a non-paramagnetic or non-ferromagnetic material), such as an aluminum material. The cover plate 222 is also formed of a non-magnetic material, such as a metal material, such as aluminum. The perforated brick 134 is made of a ceramic material, such as quartz, alumina or other similar materials. The dielectric plate 138 is made of quartz, alumina or sapphire material.

第2B圖為線圈130的一個實施例的頂部平面視圖,定位於在蓋組件106中建立的介電板138上。在一個實施例中,可使用於第2B圖中所顯示的線圈130配置使得圖示的線圈配置個別形成於介電板138之各者上,使得各個平面線圈與鄰接定位的線圈130以所欲圖案橫跨噴淋頭124串聯連接。線圈130包括矩形螺旋形狀的導體圖案290。電氣連接包括電氣輸入端子295A及電氣輸出端子295B。噴淋頭124的一或更多線圈130之各者以串聯及/或並聯連接。FIG2B is a top plan view of one embodiment of a coil 130 positioned on a dielectric plate 138 built into the cover assembly 106. In one embodiment, the coil 130 configuration shown in FIG2B can be used such that the illustrated coil configuration is individually formed on each of the dielectric plates 138, such that each planar coil is connected in series with adjacently positioned coils 130 in a desired pattern across the showerhead 124. The coil 130 includes a conductive pattern 290 in the shape of a rectangular spiral. The electrical connection includes an electrical input terminal 295A and an electrical output terminal 295B. Each of the one or more coils 130 of the showerhead 124 is connected in series and/or in parallel.

第3A圖為噴淋頭124的面板132的一個實施例的底部平面視圖。如以上所述,噴淋頭124配置成包括一或更多區,各區具有獨立控制的氣體流動。舉例而言,面板132包括中心區300A、中間區300B 1及300B 2,及外部區300C 1及300C 2FIG3A is a bottom plan view of one embodiment of the faceplate 132 of the showerhead 124. As described above, the showerhead 124 is configured to include one or more zones, each with independently controlled gas flow. For example, the faceplate 132 includes a central zone 300A, middle zones 300B1 and 300B2 , and outer zones 300C1 and 300C2 .

噴淋頭124包括氣體分配歧管305,而控制氣體流動至中心區300A、中間區300B 1及300B 2及外部區300C 1及300C 2之各者。至區的氣體流動藉由複數個流動控制器310控制,而為第1圖中所顯示的流動控制器142、143及144。流動控制器310之各者可為針形閥或質量流量控制器。流動控制器130亦可包括隔膜閥,以啟動或停止氣體流動。 Showerhead 124 includes a gas distribution manifold 305 that controls gas flow to each of the central zone 300A, the middle zones 300B1 and 300B2 , and the outer zones 300C1 and 300C2 . Gas flow to the zones is controlled by a plurality of flow controllers 310, which are shown as flow controllers 142, 143, and 144 in FIG. Each flow controller 310 can be a needle valve or a mass flow controller. Flow controller 130 can also include a diaphragm valve to start or stop gas flow.

第3B圖為噴淋頭124的面板132的另一實施例的部分底部平面視圖。在此實施例中,穿孔的磚134藉由覆蓋板222支撐。利用緊固件250以將穿孔的覆蓋板222緊固至支撐構件136,而在此視圖中因其在覆蓋板222的後方而未顯示。FIG3B is a partial bottom plan view of another embodiment of the face plate 132 of the showerhead 124. In this embodiment, the perforated bricks 134 are supported by a cover plate 222. Fasteners 250 are used to secure the perforated cover plate 222 to the support member 136, which is not shown in this view because it is behind the cover plate 222.

第4圖為概要底部平面視圖,顯示噴淋頭124的另一實施例,圖示氣體流動注入圖案至形成於噴淋頭124之中的氣體空間140中。基板的長度400及寬度405顯示於噴淋頭124的側上。流至氣體空間140的前驅物可如箭頭410所表示單一方向地提供,或如箭頭415所表示雙方向地提供。前驅物流動控制可藉由流動控制器142、143及144(顯示於第1圖中)提供。此外,例如邊緣區420、角落區425及中心區430的氣體流動區可藉由流動控制器142、143及144(顯示於第1圖中)提供。至氣體空間140及/或區之各者的前驅物流率可藉由改變開口220、開口230及限流器215之一者或結合的尺寸(均顯示於第2A圖中)而調整。FIG4 is a schematic bottom plan view of another embodiment of a showerhead 124, illustrating a gas flow pattern injected into a gas space 140 formed within the showerhead 124. The length 400 and width 405 of the substrate are shown on the side of the showerhead 124. Propellant flow to the gas space 140 can be provided unidirectionally, as indicated by arrow 410, or bidirectionally, as indicated by arrow 415. Propellant flow control can be provided by flow controllers 142, 143, and 144 (shown in FIG1). Furthermore, gas flow zones, such as edge zones 420, corner zones 425, and center zones 430, can be provided by flow controllers 142, 143, and 144 (shown in FIG1). The precursor flow rate to the gas space 140 and/or each of the zones can be adjusted by changing the size of one or a combination of the opening 220, the opening 230, and the restrictor 215 (all shown in FIG. 2A).

至氣體空間140之各者的流率可為相同或不同的。至氣體空間140的流率可藉由第1圖中所顯示的質量流量控制器142、143及144來控制。至氣體空間140的流率可額外藉由如上所述的限流器215的尺寸設計來控制。至處理區域126的流率可藉由在穿孔的磚134中的開口220的尺寸以及在覆蓋板222中的開口230的尺寸來控制。如所需的利用至氣體空間140中的雙向流動或單向流動,以提供至處理區域126足夠的氣體流動。The flow rates to each of the gas spaces 140 can be the same or different. The flow rates to the gas space 140 can be controlled by mass flow controllers 142, 143, and 144 shown in FIG. 1 . The flow rate to the gas space 140 can be additionally controlled by the size of the restrictor 215 as described above. The flow rate to the processing area 126 can be controlled by the size of the openings 220 in the perforated bricks 134 and the size of the openings 230 in the cover plate 222. Bidirectional flow or unidirectional flow into the gas space 140 can be utilized as needed to provide sufficient gas flow to the processing area 126.

控制氣體流動之方法包括1)使用來自質量流量控制器142、143及144的不同流率多重區(中心/邊緣/角落/任何其他區)控制;2)藉由不同孔口尺寸的流動控制(限流器215的尺寸);3)至氣體空間140中的流動方向控制(單一方向或雙方向);及4)藉由在穿孔的磚134中的開口220的尺寸、在穿孔的磚134中的開口220的數量及/或在穿孔的磚134中的開口220的位置的流動控制。如此處所述藉由噴淋頭124提供的氣體的質量流率改進約百分之280的非均勻百分比(NU%)(例如,從57%非均勻性(先前技術)至約15%非均勻性)。Methods of controlling gas flow include 1) multiple zones (center/edge/corner/any other zone) of different flow rates from mass flow controllers 142, 143, and 144; 2) flow control by varying orifice sizes (size of restrictor 215); 3) flow direction control (unidirectional or bidirectional) into the gas space 140; and 4) flow control by the size of the openings 220 in the perforated bricks 134, the number of openings 220 in the perforated bricks 134, and/or the location of the openings 220 in the perforated bricks 134. The mass flow rate of gas provided by the showerhead 124 as described herein is improved by approximately 280 percent in non-uniformity percentage (NU%) (e.g., from 57% non-uniformity (prior art) to approximately 15% non-uniformity).

第5圖為從第1圖中所顯示的剖面線檢視的支撐框架500的底部剖面視圖。支撐框架500以複數個支撐構件136組成。在第5圖的視圖中的支撐框架500沿著導管205的剖面切取,而顯現限流器215的各種尺寸(孔口尺寸)。在一個實施例中,限流器215之各者的各種孔口可基於所欲的氣體流動特性而改變或配置。FIG5 is a bottom cross-sectional view of the support frame 500, viewed along the section line shown in FIG1. The support frame 500 is composed of a plurality of support members 136. The support frame 500 in FIG5 is cut along a cross-section of the conduit 205, showing the various sizes (orifice sizes) of the flow restrictors 215. In one embodiment, the various orifices of each flow restrictor 215 can be changed or configured based on the desired gas flow characteristics.

在此實施例中,限流器215之各者包括第一直徑部分505、第二直徑部分510及第三直徑部分515。第一直徑部分505、第二直徑部分510及第三直徑部分515的直徑之各者為不同或相同的。直徑之各者可基於用於噴淋頭124的所欲流動特性而選擇。在一個實施例中,此處第一直徑部分505具有最小直徑,此處第三直徑部分515具有最大直徑,且第二直徑部分510具有介於第一直徑部分505及第三直徑部分515之間的直徑。在所顯示的實施例中,具有第一直徑部分505的複數個限流器215顯示為在支撐框架500的中心部分中,同時具有第三直徑部分515的複數個限流器215顯示為在支撐框架500的外部部分中。In this embodiment, each of the flow restrictors 215 includes a first diameter portion 505, a second diameter portion 510, and a third diameter portion 515. The diameters of the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 can be different or the same. The diameters can be selected based on the desired flow characteristics for the showerhead 124. In one embodiment, the first diameter portion 505 has the smallest diameter, the third diameter portion 515 has the largest diameter, and the second diameter portion 510 has a diameter between the first diameter portion 505 and the third diameter portion 515. In the illustrated embodiment, a plurality of flow restrictors 215 having a first diameter portion 505 are shown in a central portion of the support frame 500 , while a plurality of flow restrictors 215 having a third diameter portion 515 are shown in an outer portion of the support frame 500 .

此外,具有第二直徑部分510的複數個限流器215顯示為在介於中心部分及外部部分之間的中間區中。在其他實施例中,具有第一直徑部分505、第二直徑部分510及第三直徑部分515的限流器215的位置如第5圖中所顯示可在支撐框架500的部分中為相反的。或者,具有第一直徑部分505、第二直徑部分510及第三直徑部分515的限流器215取決於所欲的特性及藉由氣體空間140的控制而可定位在支撐框架500的各種部分中。橫跨噴淋頭124的均勻氣體流動在某些實施例中可為所欲的。然而,在其他實施例中,至噴淋頭124的氣體空間140之各者的氣體流動可為不均勻的。非均勻的氣體流動可歸因於處理腔室100的某些物理結構及/或幾何。舉例而言,在鄰接於傳送通口114(顯示於第1圖中)的噴淋頭124的部分中具有相較於在噴淋頭124的其他部分中的氣體流動更多的氣體流動可為所欲的。Additionally, a plurality of flow restrictors 215 having a second diameter portion 510 are shown in the middle region between the central portion and the outer portion. In other embodiments, the positions of the flow restrictors 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 as shown in FIG. 5 may be reversed within the support frame 500. Alternatively, the flow restrictors 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 may be positioned in various portions of the support frame 500 depending on the desired characteristics and the control of the gas space 140. Uniform gas flow across the showerhead 124 may be desirable in some embodiments. However, in other embodiments, the gas flow to each of the gas spaces 140 of the showerhead 124 may be non-uniform. The non-uniform gas flow may be due to certain physical structures and/or geometries of the processing chamber 100. For example, it may be desirable to have more gas flow in the portion of the showerhead 124 adjacent to the transfer port 114 (shown in FIG. 1 ) than in other portions of the showerhead 124.

第6圖為入口200的一個實施例的概要剖面視圖,而可與如此處所述的噴淋頭124一起使用。入口200包括導管205,而包括如第2A圖中所述的限流器215。在某些實施例中,限流器215的出口開口210的直徑600包括約1.4毫米(mm)至約1.6 mm的第一尺寸605A。在其他實施例中,限流器215的出口開口210的直徑600包括約1.9 mm至約2.1 mm的第二尺寸605B。出口開口210的直徑600橫跨噴淋頭124的尺寸(例如,長度/寬度)而變化。舉例而言,具有第一尺寸605A的限流器215可在如以上第3A圖中所述的中心區300A中利用。具有第二尺寸605B的限流器215可在如以上第3A圖中所述的中心區300A以外的噴淋頭124的區中利用(例如,中間區300B 1及300B 2,及外部區300C 1及300C 2)。此外,限流器215包括在噴淋頭124之中可為不同的長度610。在某些實施例中,長度610包括可為約11 mm至約12 mm之第一長度615A。在其他實施例中,限流器215的長度610包括約22 mm至約24 mm之第二長度615B。具有第一長度615A的限流器215可在如以上第3A圖中所述的中心區300A中利用。具有第二長度615B的限流器215可在如以上第3A圖中所述的中心區300A以外的噴淋頭124的區中利用(例如,中間區300B 1及300B 2,及外部區300C 1及300C 2)。如以上所述關於「尺寸」及/或「長度」的「約」一詞為+/- 0.01 mm。 FIG6 is a schematic cross-sectional view of one embodiment of an inlet 200 that can be used with the showerhead 124 described herein. The inlet 200 includes a conduit 205 and includes a flow restrictor 215 as described in FIG2A . In some embodiments, the diameter 600 of the outlet opening 210 of the flow restrictor 215 includes a first dimension 605A of approximately 1.4 millimeters (mm) to approximately 1.6 mm. In other embodiments, the diameter 600 of the outlet opening 210 of the flow restrictor 215 includes a second dimension 605B of approximately 1.9 mm to approximately 2.1 mm. The diameter 600 of the outlet opening 210 varies across the dimensions (e.g., length/width) of the showerhead 124. For example, a flow restrictor 215 having the first dimension 605A can be utilized in the central region 300A described above in FIG3A . The flow restrictor 215 having the second dimension 605B can be utilized in regions of the showerhead 124 outside of the central region 300A described above in FIG. 3A (e.g., the middle regions 300B1 and 300B2 , and the outer regions 300C1 and 300C2 ). Furthermore, the flow restrictor 215 can be included in the showerhead 124 in various lengths 610. In some embodiments, the length 610 includes a first length 615A that can be approximately 11 mm to approximately 12 mm. In other embodiments, the length 610 of the flow restrictor 215 includes a second length 615B that is approximately 22 mm to approximately 24 mm. The flow restrictor 215 having the first length 615A can be utilized in the central region 300A described above in FIG. 3A. The flow restrictor 215 having the second length 615B can be utilized in areas of the showerhead 124 other than the central area 300A described above in FIG. 3A (e.g., the middle areas 300B1 and 300B2 , and the outer areas 300C1 and 300C2 ). As described above, the term "approximately" with respect to "size" and/or "length" is defined as +/- 0.01 mm.

第7A及7B圖為穿孔的磚134之一者的一個實施例的各種視圖,而可與此處所述的噴淋頭124一起利用。第7A圖為穿孔的磚134的第一表面700的底部平面視圖,而面向覆蓋板222(顯示於第2A圖中)。第7B圖為形成於穿孔的磚134中的開口218之一者的概要剖面視圖。Figures 7A and 7B show various views of one embodiment of a perforated brick 134 that can be used with the showerhead 124 described herein. Figure 7A shows a bottom plan view of a first surface 700 of the perforated brick 134, facing the cover plate 222 (shown in Figure 2A). Figure 7B shows a schematic cross-sectional view of one of the openings 218 formed in the perforated brick 134.

穿孔的磚134包括以陶瓷材料製成的主體705,例如氧化鋁(Al 2O 3)。主體705包括第一表面700及相對於第一表面700的第二表面710(顯示於第7B圖中)。第一表面700及第二表面710為大致平行的。至少第二表面710具有約0.005英吋或更小的平坦度(根據幾何尺寸標註和公差(GD&T)所界定的工程公差)。主體705的周圍邊緣720包括形成於第一表面700及第二表面710之間的複數個開口218。 The perforated brick 134 includes a body 705 made of a ceramic material, such as aluminum oxide ( Al2O3 ). The body 705 includes a first surface 700 and a second surface 710 (shown in FIG. 7B ) opposite the first surface 700. The first and second surfaces 700, 710 are substantially parallel. At least the second surface 710 has a flatness of approximately 0.005 inches or less (according to engineering tolerances defined by geometric dimensioning and tolerancing (GD&T)). The peripheral edge 720 of the body 705 includes a plurality of openings 218 formed between the first and second surfaces 700, 710.

第一表面700包括凹陷的表面715,而界接於第一表面700及主體705的周圍邊緣720之間。凹陷的表面715包括過度區域725。過度區域725可為尖銳的肩部或斜角,而於第一表面700的邊緣處開始且延伸至主體705的周圍邊緣720。過度區域725包括圓的角落730。主體705的周圍邊緣720包括方形角落735。The first surface 700 includes a recessed surface 715 that interfaces between the first surface 700 and the peripheral edge 720 of the body 705. The recessed surface 715 includes a transition region 725. The transition region 725 may be a sharp shoulder or bevel that begins at the edge of the first surface 700 and extends to the peripheral edge 720 of the body 705. The transition region 725 includes rounded corners 730. The peripheral edge 720 of the body 705 includes squared corners 735.

複數個開口218之一者顯示於第7B圖中。開口218包括形成於第二表面710中的入口孔洞或第一孔洞740。開口218亦包括形成於第一表面700中的出口孔洞或第二孔洞745。第一孔洞740及第二孔洞745藉由步階孔洞750流體連接。第一孔洞740及第二孔洞745之各者包括喇叭形側壁755。喇叭形側壁755可包含約90度的角度α(例如,從表面700及710的平面約45度)。One of the plurality of openings 218 is shown in FIG. 7B . Opening 218 includes an inlet or first hole 740 formed in second surface 710 . Opening 218 also includes an outlet or second hole 745 formed in first surface 700 . First hole 740 and second hole 745 are fluidly connected via step hole 750 . Each of first hole 740 and second hole 745 includes a flared sidewall 755 . Flared sidewall 755 may include an angle α of approximately 90 degrees (e.g., approximately 45 degrees from the plane of surfaces 700 and 710 ).

步階孔洞750包括第一孔口760及第二孔口765。第一孔口760包括直徑770且第二孔口765包括直徑775。直徑775大於直徑770。喇叭形區段780提供於第一孔口760及第二孔口765之間。喇叭形區段780包括約90度的角度α。直徑770可為約0.017英吋至約0.018英吋。Step hole 750 includes a first orifice 760 and a second orifice 765. First orifice 760 includes a diameter 770, and second orifice 765 includes a diameter 775. Diameter 775 is larger than diameter 770. A flared section 780 is provided between first orifice 760 and second orifice 765. Flared section 780 includes an angle α of approximately 90 degrees. Diameter 770 may be approximately 0.017 inches to approximately 0.018 inches.

本揭露案的實施例包括用於噴淋頭之方法及裝置及具有噴淋頭的電漿沉積腔室,能夠在大面積基板上形成一或更多層膜。電漿均勻性以及氣體(或前驅物)流動藉由個別穿孔的磚134的配置、專用於穿孔的磚134的線圈130及/或流動控制器142、143及144以及限流器215的變化尺寸及/或位置的結合而控制。Embodiments of the present disclosure include methods and apparatus for a showerhead and a plasma deposition chamber having the showerhead, capable of forming one or more films on large-area substrates. Plasma uniformity and gas (or precursor) flow are controlled by a combination of the configuration of individual perforated bricks 134, coils 130 dedicated to the perforated bricks 134, and/or flow controllers 142, 143, and 144, and varying the size and/or position of flow restrictors 215.

儘管以上導向本揭露案的實施例,可衍生本揭露案的其他及進一步實施例而不會悖離其基本範疇,且其範疇藉由以下申請專利範圍來決定。While the above is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be derived without departing from the basic scope thereof, the scope of which is determined by the following claims.

100:處理腔室 102:基板 104:腔室主體 106:蓋組件 108:基板支撐組件 110:桿 112:驅動 114:傳送通口 116:舉升銷 118:底部 120:基板接收表面 122:背板 124:噴淋頭 126:處理區域 128:電漿源 130:線圈 132:面板 133:接地 134:穿孔的磚 136:支撐構件 138:介電板 140:氣體空間 142:質量流量控制器 143:質量流量控制器 144:流動控制器 200:入口 205:導管 210:出口開口 215:限流器 218:開口 220:開口 222:覆蓋板 225:固定部分 230:開口 235:次要氣室 240:緊固件 245:界面部分 250:緊固件 265:封口 270:擱板 275:空間 280:界面構件 285:緊固件 290:導體圖案 295A:電氣輸入端子 295B:電氣輸出端子 300A:中心區 300B:中間區 300C:外部區 305:氣體分配歧管 310:流動控制器 400:長度 405:寬度 410:箭頭 415:箭頭 420:邊緣區 425:角落區 430:中心區 500:支撐框架 505:第一直徑部分 510:第二直徑部分 515:第三直徑部分 600:直徑 605A:第一尺寸 605B:第二尺寸 610:長度 615A:第一長度 615B:第二長度 700:第一表面 705:主體 710:第二表面 715:表面 720:周圍邊緣 725:過度區域 730:角落 735:方形角落 740:第一孔洞 745:第二孔洞 750:孔洞 755:側壁 760:第一孔口 765:第二孔口 770:直徑 775:直徑 780:喇叭形區段 100: Processing chamber 102: Substrate 104: Chamber body 106: Lid assembly 108: Substrate support assembly 110: Rod 112: Drive 114: Transfer port 116: Lift pins 118: Bottom 120: Substrate receiving surface 122: Backing plate 124: Showerhead 126: Processing area 128: Plasma source 130: Coil 132: Faceplate 133: Grounding 134: Perforated brick 136: Support member 138: Dielectric plate 140: Gas space 142: Mass flow controller 143: Mass flow controller 144: Flow controller 200: Inlet 205: Conduit 210: Outlet Opening 215: Flow Restrictor 218: Opening 220: Opening 222: Cover Plate 225: Mounting Section 230: Opening 235: Secondary Chamber 240: Fastener 245: Interface Section 250: Fastener 265: Seal 270: Shelf 275: Space 280: Interface Component 285: Fastener 290: Conductor Pattern 295A: Electrical Input Terminals 295B: Electrical Output Terminals 300A: Center Section 300B: Middle Section 300C: External Section 305: Gas Distribution Manifold 310: Flow Controller 400: Length 405: Width 410: Arrow 415: Arrow 420: Edge 425: Corner 430: Center 500: Support Frame 505: First Diameter 510: Second Diameter 515: Third Diameter 600: Diameter 605A: First Dimension 605B: Second Dimension 610: Length 615A: First Length 615B: Second Length 700: First Surface 705: Main Body 710: Second Surface 715: Surface 720: Peripheral Edge 725: Transition 730: Corner 735: Square Corner 740: First Hole 745: Second hole 750: Hole 755: Sidewall 760: First opening 765: Second opening 770: Diameter 775: Diameter 780: Flared section

以此方式可詳細理解本揭露案以上所載之特徵,以上簡要概述的本揭露案的更特定說明可藉由參考實施例而獲得,某些實施例圖示於隨附圖式中。然而,應理解隨附圖式僅圖示本揭露案的通常實施例,且因此不應考量為其範疇之限制,因為本揭露案可認可其他均等效果的實施例。In order to understand the features of the present disclosure described above in detail, a more particular description of the present disclosure, briefly summarized above, can be obtained by reference to the following embodiments, some of which are illustrated in the accompanying drawings. However, it should be understood that the accompanying drawings illustrate only typical embodiments of the present disclosure and are therefore not to be considered limiting of its scope, as the present disclosure may admit to other equally effective embodiments.

第1圖根據本揭露案的一個實施例,為剖面側視圖,顯示圖示性處理腔室。FIG. 1 is a cross-sectional side view of an illustrative processing chamber according to one embodiment of the present disclosure.

第2A圖為第1圖的蓋組件之部分的放大的視圖。FIG. 2A is an enlarged view of a portion of the cover assembly of FIG. 1 .

第2B圖為線圈的一個實施例的頂部平面視圖。Figure 2B is a top plan view of one embodiment of a coil.

第3A圖為噴淋頭的面板的一個實施例的底部平面視圖。FIG. 3A is a bottom plan view of one embodiment of a face plate of a showerhead.

第3B圖為噴淋頭的面板的另一實施例的部分底部平面視圖。FIG3B is a partial bottom plan view of another embodiment of a face plate of a showerhead.

第4圖為概要底部平面視圖,顯示噴淋頭的流動控制的另一實施例。FIG4 is a schematic bottom plan view showing another embodiment of flow control for a showerhead.

第5圖為用於噴淋頭的支撐框架的剖面平面視圖。Figure 5 is a cross-sectional plan view of the support frame for the shower head.

第6圖為可與此處所述的噴淋頭一起使用的入口的一個實施例的概要剖面視圖。FIG. 6 is a schematic cross-sectional view of one embodiment of an inlet that may be used with the showerheads described herein.

第7A圖為用於此處所述的噴淋頭的穿孔的磚的平面視圖。FIG. 7A is a plan view of a perforated brick for use with the showerhead described herein.

第7B圖為形成於第7A圖的穿孔的磚中的開口之一者的概要剖面視圖。FIG. 7B is a schematic cross-sectional view of one of the openings formed in the perforated brick of FIG. 7A .

為了促進理解,已儘可能地使用相同的元件符號代表共通圖式中相同的元件。應考量在一個實施例中揭露的元件可有益地利用於其他實施例上而無須具體說明。To facilitate understanding, like reference numerals have been used, where possible, to designate like elements in common drawings. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.

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106:蓋組件 122:背板 124:噴淋頭 126:處理區域 128:電漿源 130:線圈 132:面板 133:接地 134:穿孔的磚 136:支撐構件 138:介電板 140:氣體空間 200:入口 205:導管 210:出口開口 215:限流器 218:開口 220:開口 222:覆蓋板 225:固定部分 230:開口 235:次要氣室 240:緊固件 245:界面部分 250:緊固件 265:封口 270:擱板 275:空間 280:界面構件 285:緊固件 106: Cover assembly 122: Back plate 124: Shower head 126: Treatment area 128: Plasma source 130: Coil 132: Faceplate 133: Grounding 134: Perforated brick 136: Support member 138: Dielectric plate 140: Gas space 200: Inlet 205: Conduit 210: Outlet opening 215: Restrictor 218: Opening 220: Opening 222: Cover plate 225: Mounting section 230: Opening 235: Secondary plenum 240: Fastener 245: Interface section 250: Fastener 265: Seal 270: Shelves 275: Space 280: Interface Components 285: Fasteners

Claims (15)

一種電漿沉積腔室,包含:一腔室主體,佈置在一內部空間四周;一基板支撐件,在該內部空間中;及一噴淋頭,定位在該基板支撐件上;該噴淋頭包含:複數個支撐構件;複數個穿孔的磚,其各者耦合至該複數個支撐構件之一或更多者;複數個介電板,定位成與該複數個穿孔的磚分隔開來;及複數個電感耦合器,定位在該複數個介電板之各者上,其中該複數個支撐構件之各者包括配置成提供前驅物氣體至形成於該等介電板之一者及該等穿孔的磚之一者之間的一空間的一導管,各個導管包括一限流器,該複數個支撐構件包括一第一支撐構件及一第二支撐構件,在該第一支撐構件中的該導管的該限流器具有一第一長度,且在該第二支撐構件中的該導管的該限流器具有不同於該第一長度的一第二長度。 A plasma deposition chamber comprises: a chamber body arranged around an interior space; a substrate support in the interior space; and a showerhead positioned on the substrate support; the showerhead comprising: a plurality of support members; a plurality of perforated bricks, each coupled to one or more of the plurality of support members; a plurality of dielectric plates positioned to be separated from the plurality of perforated bricks; and a plurality of inductive couplers positioned on each of the plurality of dielectric plates, wherein the plurality of inductive couplers are positioned on the plurality of dielectric plates. Each of the plurality of support members includes a duct configured to provide a precursor gas to a space formed between one of the dielectric plates and one of the perforated bricks, each duct including a flow restrictor, the plurality of support members including a first support member and a second support member, the flow restrictor of the duct in the first support member having a first length, and the flow restrictor of the duct in the second support member having a second length different from the first length. 如請求項1所述之腔室,其中在該第一支撐構件中的該導管的該限流器具有一第一 直徑,且在該第二支撐構件中的該導管的該限流器具有不同於該第一直徑的一第二直徑。 The chamber of claim 1, wherein the flow restrictor of the conduit in the first support member has a first diameter, and the flow restrictor of the conduit in the second support member has a second diameter different from the first diameter. 如請求項1所述之腔室,其中該複數個穿孔的磚及該複數個支撐構件之各者包括一界面部分。 The chamber of claim 1, wherein each of the plurality of perforated bricks and the plurality of support members includes an interface portion. 如請求項1所述之腔室,進一步包含一覆蓋板,定位於該等穿孔的磚之各者四周。 The chamber of claim 1 further comprising a cover plate positioned around each of the perforated bricks. 如請求項4所述之腔室,其中該覆蓋板包括形成於其中的開口。 The chamber of claim 4, wherein the cover plate includes an opening formed therein. 如請求項5所述之腔室,其中各個穿孔的磚包括與形成於該覆蓋板中的該等開口對齊的開口。 The chamber of claim 5, wherein each perforated brick includes openings aligned with the openings formed in the cover plate. 如請求項1所述之腔室,其中該噴淋頭劃分成分散的氣體傳輸區,包含一中心區、鄰接於該中心區的一中間區、及鄰接於該中間區的外部區。 The chamber of claim 1, wherein the showerhead is divided into a dispersed gas delivery zone comprising a central zone, a middle zone adjacent to the central zone, and an outer zone adjacent to the middle zone. 一種用於一電漿沉積腔室的噴淋頭,該噴淋頭包含:複數個支撐構件,包括一第一支撐構件及一第二支撐構件,各個支撐構件包含一或更多個第一支撐表面及一或更多個第二支撐表面,其中該複數個第一支撐表面佈置成與該複數個第二支撐表面分隔開來;複數個氣體傳輸組件,包含複數個穿孔的磚及定位成與該複數個穿孔的磚分隔開來的複數個介電板,其中該複數個氣體傳輸組件之各者包含:一穿孔的磚,佈置於該複數個第一支撐表面的一第一 支撐表面上;及一介電板,佈置於該複數個第二支撐表面的一第二支撐表面上;其中一氣體空間界定於該介電板的一表面及該穿孔的磚的一表面之間;複數個導管,包括在該第一支撐構件中的一第一導管及在該第二支撐構件中的一第二導管,各個導管配置成提供前驅物氣體至該複數個氣體傳輸組件的該等氣體空間之一者,其中該等導管之各者包括一限流器,該第一導管的該限流器具有一第一長度,且該第二導管的該限流去具有不同於該第一長度的一第二長度;及一線圈,在該噴淋頭之中佈置於該複數個氣體傳輸組件之各者上。 A showerhead for a plasma deposition chamber, the showerhead comprising: a plurality of support members, including a first support member and a second support member, each support member comprising one or more first support surfaces and one or more second support surfaces, wherein the plurality of first support surfaces are arranged to be separated from the plurality of second support surfaces; a plurality of gas delivery assemblies, comprising a plurality of perforated bricks and a plurality of dielectric plates positioned to be separated from the plurality of perforated bricks, wherein each of the plurality of gas delivery assemblies comprises: a perforated brick disposed on a first support surface of the plurality of first support surfaces; and a dielectric plate disposed on the plurality of second support surfaces. a second support surface of the dielectric board and a second support surface of the perforated brick; wherein a gas space is defined between a surface of the dielectric board and a surface of the perforated brick; a plurality of conduits, including a first conduit in the first support member and a second conduit in the second support member, each conduit configured to provide a precursor gas to one of the gas spaces of the plurality of gas delivery components, wherein each of the conduits includes a flow restrictor, the flow restrictor of the first conduit having a first length, and the flow restrictor of the second conduit having a second length different from the first length; and a coil disposed on each of the plurality of gas delivery components in the showerhead. 如請求項8所述之噴淋頭,其中在該第一支撐構件中的該第一導管的該限流器具有一第一直徑,且在該第二支撐構件中的該第二導管的該限流器具有不同於該第一直徑的一第二直徑。 The showerhead of claim 8, wherein the flow restrictor of the first conduit in the first support member has a first diameter, and the flow restrictor of the second conduit in the second support member has a second diameter different from the first diameter. 如請求項8所述之噴淋頭,其中該複數個穿孔的磚之各者及該支撐構件包括一界面部分。 The shower head of claim 8, wherein each of the plurality of perforated bricks and the supporting member includes an interface portion. 如請求項8所述之噴淋頭,進一步包括一覆蓋板,定位於該等穿孔的磚之各者四周。 The shower head as described in claim 8 further includes a cover plate positioned around each of the perforated bricks. 一種用於一電漿沉積腔室的噴淋頭,該噴淋頭包含:複數個支撐構件,包括一第一支撐構件及一第二支撐構件,各個支撐構件構件包含一或更多個第一支撐表面及一或更多個第二支撐表面,其中該複數個第一支撐表面佈置成與該複數個第二支撐表面分隔開來;複數個氣體傳輸組件,包含複數個穿孔的磚及定位成與該複數個穿孔的磚分個開來的複數個介電板,其中該複數個氣體傳輸組件之各者包含:一穿孔的磚,佈置於該複數個第一支撐表面的一第一支撐表面上;及一介電板,佈置於該複數個第二支撐表面的一第二支撐表面上;其中在該介電板的一表面及該穿孔的磚的一表面之間界定且結合一氣體空間;複數個導管,包括在該第一支撐構件中的一第一導管及在該第二支撐構件中的一第二導管,各個導管配置成提供前驅物氣體至該複數個氣體傳輸組件的該等氣體空間之一者,其中該等導管之各者包括一限流器,該第一導管的該限流器具有一第一長度,且該第二導管的該限流器具有不同於該第一長度的一第二長度;及一線圈,在該噴淋頭之中耦合至該介電板。 A showerhead for a plasma deposition chamber, the showerhead comprising: a plurality of support members, including a first support member and a second support member, each support member comprising one or more first support surfaces and one or more second support surfaces, wherein the plurality of first support surfaces are arranged to be separated from the plurality of second support surfaces; a plurality of gas delivery assemblies, comprising a plurality of perforated bricks and a plurality of dielectric plates positioned to be separated from the plurality of perforated bricks, wherein each of the plurality of gas delivery assemblies comprises: a perforated brick arranged on a first support surface of the plurality of first support surfaces; and a dielectric plate arranged On a second support surface of the plurality of second support surfaces; wherein a gas space is defined and integrated between a surface of the dielectric plate and a surface of the perforated brick; a plurality of conduits, including a first conduit in the first support member and a second conduit in the second support member, each conduit configured to provide a precursor gas to one of the gas spaces of the plurality of gas delivery assemblies, wherein each of the conduits includes a flow restrictor, the flow restrictor of the first conduit having a first length and the flow restrictor of the second conduit having a second length different from the first length; and a coil coupled to the dielectric plate in the showerhead. 如請求項12所述之噴淋頭,其中在該第一支撐構件中的該導管的該限流器具有一第一直徑,且在該第二支撐構件中的該導管的該限流器具有不同於該第一直徑的一第二直徑。 The showerhead of claim 12, wherein the flow restrictor of the conduit in the first support member has a first diameter, and the flow restrictor of the conduit in the second support member has a second diameter different from the first diameter. 如請求項12所述之噴淋頭,其中該等穿孔的磚之各者及該支撐構件包括一界面部分。 The shower head as claimed in claim 12, wherein each of the perforated bricks and the supporting member includes an interface portion. 如請求項14所述之噴淋頭,其中各個界面部分包含一壁架,該壁架支撐該等穿孔的磚的一周圍的一部分。 The shower head of claim 14, wherein each interface portion includes a ledge supporting a portion of a periphery of the perforated bricks.
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