CN103484860A - Wet etching equipment and supply device thereof - Google Patents
Wet etching equipment and supply device thereof Download PDFInfo
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Abstract
Description
技术领域 technical field
本发明涉及一种用于蚀刻的设备,尤其是指一种湿式蚀刻设备及其供应装置。The invention relates to an etching device, in particular to a wet etching device and a supply device thereof.
背景技术 Background technique
目前半导体工艺中,例如晶圆、封装基板、封装结构或电路板等版面(pannel),均会使用蚀刻液清洗该版面的表面残留物,例如铜渣、胶渣、阻层等。一般清洗过程中,先利用蚀刻液移除版面的表面残留物,再以清洗液(如水)清洗该版面上的蚀刻液,最后再干燥该版面的表面。In the current semiconductor process, such as wafers, packaging substrates, packaging structures, or circuit boards, etc., etchant is used to clean the surface residues on the panels, such as copper slag, glue slag, and barrier layers. Generally, in the cleaning process, the etching solution is used to remove the residue on the surface of the layout, and then the etching solution on the layout is cleaned with a cleaning solution (such as water), and finally the surface of the layout is dried.
图1A及图1B所示者,为现有电路板版面5进行蚀刻清洗工艺的上视与侧视示意图。如图所示,湿式蚀刻设备(图略)将蚀刻液3经输送管10送至多个呈数组排设的喷嘴11,以借由该些喷嘴11将蚀刻液3喷洒于该电路板版面5上。1A and 1B are schematic top and side views of the conventional
然而,现有喷嘴11为固定式,也就是无法调整该喷嘴11的位置与个别运作该喷嘴11,所以该喷嘴11的设计需能喷洒蚀刻液3相当广的范围,以避免清洗不完全,但却因无法控制喷洒该蚀刻液3的输出量,致使无法对特定区域微蚀刻或选择性蚀刻,而导致无法针对微小区域的表面进行清洗,也无法针对产品特性变异进行高精度控制的选择性加工,以致无法满足提高蚀刻控制精细度的需求。However, the existing
此外,现有湿式蚀刻设备中,该些输送管10及喷嘴11为均匀分布,且无法调整该些输送管10及喷嘴11的位置,又无法个别运作喷嘴11,所以无法针对该电路板版面5的特定区域进行精密区域性蚀刻作业。例如,无法对特定区域微蚀刻,导致无法清洗干净微小区域的表面残渣。因此,目前一般湿式蚀刻设备进行蚀刻作业时为整批全面性连续作业,而无法针对产品特性变异进行高精度控制的选择性加工,以致难以提高蚀刻控制精细度,因而影响到产品的特性能力的有效性与产品的产出良率。In addition, in the existing wet etching equipment, the
因此,如何克服上述现有技术的种种问题,实已成目前亟欲解决的课题。Therefore, how to overcome the various problems of the above-mentioned prior art has become an urgent problem to be solved at present.
发明内容 Contents of the invention
鉴于上述现有技术的种种不足,本发明的主要目的在于提供一种湿式蚀刻设备及其供应装置,以控制该流体的输出量。In view of the shortcomings of the above-mentioned prior art, the main purpose of the present invention is to provide a wet etching device and its supply device to control the output of the fluid.
本发明的供应装置,通过于一如喷嘴的供应件外围盖设一调整件,该调整件具有相邻的信道与回收道,且该供应件穿设于该信道中,以使蚀刻液可由该信道输出,并令该回收道吸取部分由该信道输出的蚀刻液,以减少该蚀刻液的输出量。In the supply device of the present invention, an adjustment member is covered on the periphery of a supply member such as a nozzle, the adjustment member has adjacent channels and recovery channels, and the supply member is penetrated in the channel, so that the etching solution can flow through the channel. channel output, and make the recovery channel absorb part of the etching solution output by the channel, so as to reduce the output volume of the etching solution.
前述的供应装置中,其可设于湿式蚀刻设备的机台上,且该机台具有定位件,供该供应件设置于该定位件上,以借该定位件带动该供应件与调整件至所需的位置。In the aforementioned supply device, it can be arranged on the machine platform of the wet etching equipment, and the machine platform has a positioning member for the supply member to be arranged on the positioning member, so that the supply member and the adjustment member can be driven by the positioning member to the desired location.
另外,该机台具有可程序逻辑控制系统,以操控该定位件的运作、蚀刻液的运动或该回收道的运作。In addition, the machine has a programmable logic control system to control the operation of the positioning member, the movement of the etching solution or the operation of the recycling channel.
由上可知,本发明的湿式蚀刻设备及其供应装置,借由该回收道的设计,使该调整件能控制喷洒蚀刻液的输出量,也就是能控制喷洒蚀刻液的范围,以对特定区域微蚀刻或选择性蚀刻,而能对微小区域的表面进行清洗,且能对产品特性变异进行高精度控制的选择性加工,所以可提高该湿式蚀刻设备的精密蚀刻的能力,以达成高良率及高特性能力的需求。As can be seen from the above, the wet etching equipment and its supply device of the present invention, by virtue of the design of the recovery channel, the adjustment member can control the output of the sprayed etching solution, that is, the range of the sprayed etching solution can be controlled to target specific areas. Micro-etching or selective etching can clean the surface of small areas, and can carry out selective processing of high-precision control of product characteristic variation, so the ability of precision etching of the wet etching equipment can be improved to achieve high yield and The need for high performance capabilities.
此外,该机台借由定位件以带动该供应件与调整件至所需的位置,且借由可程序逻辑控制系统,以个别运作该供应件,所以能对各版面的特定区域进行精密区域性蚀刻作业。因此,于整批版面全面性连续作业时,可依需求针对产品特性变异进行高精度控制的选择性加工,以提高蚀刻控制精细度。In addition, the machine drives the supply part and the adjustment part to the desired position through the positioning part, and operates the supply part individually through the programmable logic control system, so it can precisely control the specific area of each layout Etching operations. Therefore, when the entire batch of layouts is fully and continuously operated, selective processing with high precision control can be carried out for product characteristic variations according to requirements, so as to improve the fineness of etching control.
附图说明 Description of drawings
图1A为现有电路板版面进行蚀刻清洗工艺的上视示意图;FIG. 1A is a schematic top view of an etching and cleaning process for an existing circuit board layout;
图1B为现有电路板版面进行蚀刻清洗工艺的侧视示意图;FIG. 1B is a schematic side view of an etching and cleaning process for an existing circuit board layout;
图2A为本发明供应装置的侧剖视示意图;2A is a schematic side sectional view of the supply device of the present invention;
图2B为本发明供应装置的调整件的上视示意图;以及Fig. 2B is a schematic top view of the adjustment member of the supply device of the present invention; and
图3A至图3C为本发明湿式蚀刻设备的不同实施例的上视示意图。3A to 3C are schematic top views of different embodiments of the wet etching equipment of the present invention.
主要组件符号说明Explanation of main component symbols
10 输送管10 delivery pipe
11 喷嘴11 Nozzles
2,2’,2” 湿式蚀刻设备2,2’,2”wet etching equipment
2a 供应装置2a Supply device
20 定位件20 Positioning parts
21 供应件21 supply parts
21a,21b 供应单元21a, 21b supply unit
22 调整件22 Adjusting parts
220 信道220 channels
221 回收道221 Recycling Road
3 蚀刻液3 Etching solution
5 电路板版面5 circuit board layout
h 高度差h height difference
x 横向移动x lateral movement
y 纵向移动。y Move vertically.
具体实施方式 Detailed ways
以下借由特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其它优点及功效。The implementation of the present invention will be described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.
须知,本说明书所附图式所绘示的结构、比例、大小等,均仅用以配合说明书所揭示的内容,以供本领域技术人员的了解与阅读,并非用以限定本发明可实施的限定条件,所以不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”、“下”及“一”等用语,也仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当也视为本发明可实施的范畴。It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present invention. The disclosed technical content must be within the scope covered. At the same time, terms such as "upper", "lower" and "a" quoted in this specification are only for the convenience of description, and are not used to limit the applicable scope of the present invention, and the changes or adjustments of their relative relations , without substantially changing the technical content, it should also be regarded as the scope of the present invention that can be implemented.
图2A及图2B为本发明的湿式蚀刻设备用的供应装置2a的示意图。如图2A所示,该供应装置2a包括一供应件21以及一调整件22。2A and 2B are schematic diagrams of a
所述的供应件21具有贯穿的供应道(图略),以输送流体。于本实施例中,该供应件21为喷嘴。The
所述的调整件22具有相邻的信道220与回收道221,该供应件21穿设于该信道220中,以使流经该供应件21的蚀刻液3由该信道220输出,而该回收道221用以吸取部分由该信道220输出的蚀刻液3,以减少该蚀刻液3的输出量。The
于本实施例中,该回收道221利用虹吸抽气回收该蚀刻液3,如图2A所示的箭头方向。In this embodiment, the
此外,该回收道221的端口与该信道220的端口具有高度差h,如图2A所示,该回收道221的端口位置比该信道220的端口位置更低,也就是该回收道221的端口位于该信道220的端口下方,以利于该回收道221吸取部分由该信道220输出的蚀刻液3。In addition, the port of the
再者,该回收道221围绕于该信道220的外侧,如图2B所示,以提升该回收道221的回收率,也就是提高该蚀刻液3的微供应量的准确度。Furthermore, the
本发明的供应装置2a中,借由该信道220以控制蚀刻区域,并借由该回收道221回收该蚀刻液3,使该调整件22能控制喷洒蚀刻液3的输出量,也就是能控制喷洒蚀刻液3的范围,以对特定区域微蚀刻或选择性蚀刻,而能对微小区域(如点区域)的表面进行清洗,且能对产品特性变异进行高精度控制的选择性加工,所以能达到高精度控制的效果。In the
请一并参阅图3A至图3C,其为具有该供应装置2a的湿式蚀刻设备2,2’,2”,其将该供应装置2a设于一机台(图略)上。Please also refer to Fig. 3A to Fig. 3C, which are
所述的机台具有用以储存流体(如蚀刻液3)的容置空间(图略),且该供应件21设置于该机台上,而该供应道连通该机台的容置空间,以令该容置空间中的蚀刻液3流经该供应道移至该机台外。此外该调整件22的回收道221连通该机台的容置空间,以将部分由该信道220输出的蚀刻液3借由该回收道221吸回该机台的容置空间,如图2A所示的箭头方向。The machine table has an accommodating space (not shown) for storing fluid (such as etching solution 3), and the
于本实施例中,该机台具有可程序逻辑控制系统(ProgrammableLogic Controller,PLC)与定位件20,该PLC用以操控蚀刻清洗作业,例如,该蚀刻液3的运动或该回收道221的运作,且该定位件20用以将该供应件21设于其上,以借该PLC操控该定位件20带动该供应件21与调整件22至所需的位置。In this embodiment, the machine has a programmable logic control system (ProgrammableLogic Controller, PLC) and a positioning
此外,该供应件21为多个时,由至少二该供应件21构成一组供应单元21a,21b,如图3A及图3B所示。或者,如图3C所示,该些供应件21呈数组排设,以形成高密度矩阵排列的蚀刻喷头群。In addition, when there are
所述的供应单元21a可由排成矩形的多个供应件21组成,如图3A所示;或者,该供应单元21b可由排成直线的多个供应件21组成,如图3B所示。The
再者,该供应件21或供应单元21a,21b可借由该定位件20纵向移动y,如图3A及图3B所示。Furthermore, the
另外,该定位件20可作为轨道,令该供应件21或供应单元21a能于该定位件20上横向移动x,如图3A所示。In addition, the positioning
本发明的湿式蚀刻设备2,2’,2”中,借由该PLC的设计,能个别运作该供应件21或供应单元21a,21b,以具选择性蚀刻控制能力,所以能对该电路板版面5的特定区域进行精密区域性蚀刻作业。In the
此外,借由该定位件20的设计,以带动该供应件21或供应单元21a,21b与调整件22至所需的位置,而具选择性蚀刻控制能力,所以也能对该电路板版面5的特定区域进行精密区域性蚀刻作业。In addition, due to the design of the positioning
因此,于整批版面全面性连续作业时,可使用可移动式(如图3A及图3B所示)或多组式(如图3C所示)的湿式蚀刻设备2,2’,2”蚀刻清洗该电路板版面5,以依需求针对产品特性变异进行高精度控制的选择性加工,而提高蚀刻控制精细度。例如,于初步蚀刻作业后,进行光学检查,再针对仍有残留物(如残铜块)的区域(即点区域)进行二次蚀刻加工,而无需进行整版面蚀刻加工。Therefore, when the entire batch of layouts is fully and continuously operated, mobile (as shown in Figure 3A and Figure 3B) or multi-group (as shown in Figure 3C)
此外,有关版面的种类繁多,例如晶圆、封装基板或封装结构,并不限于电路板。In addition, there are various types of layouts, such as wafers, package substrates or package structures, and are not limited to circuit boards.
另外,有关机台的容置空间中的流体种类繁多,并不限于蚀刻液,也可为其它液体(如水),特此述明。In addition, there are various kinds of fluids in the accommodation space of the relevant machine, and they are not limited to etching liquid, and can also be other liquids (such as water), which is hereby stated.
综上所述,本发明的湿式蚀刻设备及其供应装置,主要借由该回收道的设计,使该调整件能控制喷洒蚀刻液的输出量,以进行微蚀刻或选择性蚀刻,而提高该湿式蚀刻设备的精密蚀刻的能力。To sum up, the wet etching equipment and its supply device of the present invention, mainly by the design of the recovery channel, enable the adjustment member to control the output of the sprayed etching solution to perform micro-etching or selective etching, thereby improving the Precision etching capability of wet etching equipment.
另外,借由定位件与可程序逻辑控制系统的设计,以对各版面的特定区域进行蚀刻作业,所以于整批版面全面性连续作业时,可依需求进行高精度控制的选择性加工,以提高蚀刻控制精细度,而提升产品的特性能力的有效性与产品的产出良率。In addition, through the design of positioning parts and programmable logic control system, the etching operation can be carried out on the specific area of each layout, so when the whole batch of layouts is fully and continuously operated, selective processing with high precision control can be carried out according to the demand, so as to Improve the fineness of etching control, and improve the effectiveness of the product's characteristic capabilities and the output yield of the product.
上述实施例仅用以例示性说明本发明的原理及其功效,而非用于限制本发明。任何本领域技术人员均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的权利保护范围,应如权利要求书所列。The above-mentioned embodiments are only used to illustrate the principles and effects of the present invention, but not to limit the present invention. Any person skilled in the art can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be listed in the claims.
Claims (11)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020086535A1 (en) * | 2000-10-26 | 2002-07-04 | Frank Adler | Method for local etching |
| CN101040067A (en) * | 2004-10-19 | 2007-09-19 | 法国圣-戈班玻璃公司 | Device for etching a conductive layer and etching method |
| CN101717935A (en) * | 2008-10-09 | 2010-06-02 | 欣兴电子股份有限公司 | Method for etching metal layer of substrate |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020086535A1 (en) * | 2000-10-26 | 2002-07-04 | Frank Adler | Method for local etching |
| CN101040067A (en) * | 2004-10-19 | 2007-09-19 | 法国圣-戈班玻璃公司 | Device for etching a conductive layer and etching method |
| CN101717935A (en) * | 2008-10-09 | 2010-06-02 | 欣兴电子股份有限公司 | Method for etching metal layer of substrate |
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Application publication date: 20140101 |