TW201607392A - Surface treatment device of substrate material - Google Patents
Surface treatment device of substrate material Download PDFInfo
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- TW201607392A TW201607392A TW103137384A TW103137384A TW201607392A TW 201607392 A TW201607392 A TW 201607392A TW 103137384 A TW103137384 A TW 103137384A TW 103137384 A TW103137384 A TW 103137384A TW 201607392 A TW201607392 A TW 201607392A
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- base material
- surface treatment
- spray nozzle
- treatment apparatus
- etching
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- 239000000463 material Substances 0.000 title claims abstract description 96
- 238000004381 surface treatment Methods 0.000 title claims abstract description 85
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 239000007921 spray Substances 0.000 claims abstract description 154
- 239000007788 liquid Substances 0.000 claims abstract description 60
- 238000012545 processing Methods 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims description 99
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 238000011161 development Methods 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 4
- 230000006872 improvement Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 28
- 238000002347 injection Methods 0.000 description 17
- 239000007924 injection Substances 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 239000011889 copper foil Substances 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 13
- 238000012360 testing method Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 7
- 239000011295 pitch Substances 0.000 description 7
- 230000014759 maintenance of location Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000011077 uniformity evaluation Methods 0.000 description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
本發明係關於一種基板材之表面處理裝置。即,本發明係關於一種被使用於電子電路基板之製造步驟中之基板材之表面處理裝置。 The present invention relates to a surface treatment apparatus for a base sheet. That is, the present invention relates to a surface treatment apparatus for a base material used in a manufacturing step of an electronic circuit board.
用於電子機器之電路基板之小型輕量化、極薄化、可撓化等之進展突出,所形成之電子電路之微細化、高密度化亦顯著。 The development of the circuit board for electronic equipment is small, lightweight, extremely thin, and flexible, and the electronic circuit formed is also made finer and more dense.
而且,於此種電子電路基板之製造步驟中使用有表面處理裝置。而且,於表面處理裝置中,藉由處理液之噴射而對電子電路基板用之基板材進行表面處理,由此形成電子電路而製造電路基板。 Further, a surface treatment apparatus is used in the manufacturing steps of such an electronic circuit board. Further, in the surface treatment apparatus, the base material sheet for the electronic circuit board is surface-treated by the ejection of the processing liquid, thereby forming an electronic circuit to manufacture the circuit board.
關於此種印刷配線基板、其他電子電路基板之代表性之製造步驟係如下所述。 Representative manufacturing steps for such a printed wiring board and other electronic circuit boards are as follows.
首先,於由銅箔積層板所構成之基板材之外表面,→塗佈或貼附液狀或乾膜狀之感光性抗蝕劑。 First, a liquid or dry film-like photosensitive resist is applied or adhered to the outer surface of the base material composed of the copper foil laminate.
→其次,於貼上電路之底片而曝光後,→將電路形成部分以外之抗蝕劑藉由顯影而溶解去除,→並且,於將露出之電路形狀部分以外 之銅箔藉由蝕刻而溶解去除後,→將電路形成部分之抗蝕劑藉由剝離而溶解去除。→藉由經由此種步驟,而由殘留於基板材之外表面之銅箔形成電子電路,由此製造電子電路基板。 → Next, after the film of the circuit is pasted and exposed, → the resist other than the circuit forming portion is dissolved and removed by development, and → outside the circuit shape portion to be exposed After the copper foil is dissolved and removed by etching, the resist of the circuit forming portion is dissolved and removed by peeling off. → By such a step, an electronic circuit is formed from a copper foil remaining on the outer surface of the base material, thereby manufacturing an electronic circuit board.
而且,上述顯影步驟、蝕刻步驟(電路形成步驟)、剝離步驟、進而準備步驟之半蝕刻步驟(銅箔表面形狀加工步驟)、或準備步驟之軟蝕刻步驟(表面粗化步驟)中係藉由下述操作來實施表面處理。 Further, the development step, the etching step (circuit forming step), the stripping step, the half etching step of the preparation step (copper foil surface shape processing step), or the soft etching step (surface roughening step) of the preparation step are performed by The following operations were performed to carry out the surface treatment.
即,分別於顯影裝置、蝕刻裝置、剝離裝置等表面處理裝置中,對以輸送機水平搬送之基板材自噴霧嘴噴射顯影液、蝕刻液、剝離液等處理液。由此對基板材依序實施顯影、蝕刻、剝離等表面處理。 In other words, in the surface treatment apparatus such as the developing device, the etching device, and the peeling device, a processing liquid such as a developing solution, an etching solution, or a peeling liquid is sprayed from the spray nozzle on the substrate which is conveyed horizontally by the conveyor. Thereby, surface treatment such as development, etching, and peeling is sequentially performed on the base material.
用以噴射處理液之噴霧嘴係位於相對於水平搬送之基板材於正上方或正下方呈對向之位置,並且於前後、左右以既定間距間隔配設有多個。 The spray nozzle for spraying the treatment liquid is located at a position directly opposite to or directly below the base material to be horizontally conveyed, and is disposed at a predetermined interval between the front, rear, and left and right.
作為此種表面處理裝置,例如可列舉以下專利文獻1、專利文獻2所揭示者。 Examples of such surface treatment apparatuses include those disclosed in Patent Document 1 and Patent Document 2 below.
[專利文獻1]日本專利特開2002-68435號公報(日本專利公開公報) [Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-68435 (Japanese Patent Laid-Open Publication)
[專利文獻2]日本專利特開2006-222117號公報(日本專利公開公報) [Patent Document 2] Japanese Patent Laid-Open Publication No. 2006-222117 (Japanese Patent Laid-Open Publication)
此外,關於此種先前之基板材之表面處理裝置,指出有以下問題。 Further, regarding the surface treatment apparatus of such a prior substrate, the following problems are pointed out.
第1,指出基板材之處理精度存在問題。即,若藉由先前之表面處理裝置進行處理,則對於所形成之電路,電路寬度容易產生偏差。尤其是關於蝕刻,於均勻性即蝕刻深度(電路深度)之均勻性方面存在問題,均勻性較差而使電路寬度產生偏差。 First, it is pointed out that there is a problem in the processing accuracy of the base sheet. That is, if the processing is performed by the previous surface processing apparatus, the circuit width is likely to vary with respect to the formed circuit. In particular, regarding etching, there is a problem in uniformity, that is, uniformity of etching depth (circuit depth), and uniformity is poor, and the circuit width is deviated.
例如,如圖6之(2)圖、(3)圖所示,關於形成於基板材A之電路B,指出有蝕刻處理延遲、不足,而產生電路深度C變淺、電路寬度(底部寬度)L過大之部位。反之,亦指出有因蝕刻處理過度,而產生電路深度C變深、電路寬度L變窄變細而過小之部位。關於先前之表面處理裝置,此種均勻性之惡化、電路寬度L之偏差對於電路B之微細化、高密度化進展之基板而言成為較大之問題。電路B之通電容量、電阻值等相對於規格值變動,而成為不良原因。 For example, as shown in (2) and (3) of FIG. 6, regarding the circuit B formed on the base material A, it is pointed out that there is a delay and an insufficient etching process, and the circuit depth C is shallow, and the circuit width (bottom width) is generated. L is too large. On the other hand, it is also pointed out that the etching process is excessive, and the circuit depth C is deepened, and the circuit width L is narrowed and narrowed. In the conventional surface treatment apparatus, such deterioration in uniformity and variation in circuit width L are a problem for the substrate in which the circuit B is made finer and higher in density. The current capacity, resistance value, and the like of the circuit B vary with respect to the specification value, which is a cause of failure.
作為此種第1問題之原因,考慮以下(A)、(B)。 As the cause of such a first problem, the following (A) and (B) are considered.
作為(A),於基板處理裝置中,成為處理對象之基板材A之加工尺寸代表性為縱橫600mm×500mm或500mm×400mm。即,鑒於製造成本,使用實際之基板之數倍大小之基板材A,而可由較大之基板材A獲得複數片較小之基板。 In (A), in the substrate processing apparatus, the processing size of the base material A to be processed is typically 600 mm × 500 mm or 500 mm × 400 mm. That is, in view of the manufacturing cost, the base material A of several times the actual substrate is used, and a plurality of smaller substrates can be obtained from the larger base material A.
如此,基板材A之加工尺寸較大亦會導致例如於其中央部與周邊部間均勻性惡化、電路寬度L產生偏差。 As a result, the processing size of the base material sheet A is large, for example, the uniformity between the central portion and the peripheral portion is deteriorated, and the circuit width L is deviated.
作為(B),作為更大之偏差原因,考慮以下方面。即,表面處理裝置中,於前後、左右配設有多個噴霧嘴,但先前技術中,位於搬送方向之前後之噴霧嘴分別於前後之搬送方向成行而配設。即,噴霧嘴係於左右之寬度方向存在間隔並且朝向前後之搬送方向呈複數行而配 設。 As (B), as a cause of greater deviation, the following aspects are considered. In other words, in the surface treatment apparatus, a plurality of spray nozzles are disposed in front, rear, and left and right. However, in the prior art, the spray nozzles located before and after the transport direction are arranged in a row in the front and rear transport directions. That is, the spray nozzles are spaced apart in the width direction of the left and right and are oriented in a plurality of rows toward the front and rear transport directions. Assume.
因此,所形成之電路B之位於此種噴霧嘴行之正下方或正上方之部位(於前後之搬送方向上以平行線狀、紋狀之軌跡形成)始終受到較強之噴霧壓、噴射衝擊,而導致蝕刻處理過度,電路寬度L過小。 Therefore, the formed circuit B is located directly below or directly above the row of the spray nozzle (formed in a parallel line shape and a ridged track in the front and rear transport directions), and is always subjected to a strong spray pressure and jet impact. The etching process is excessive and the circuit width L is too small.
相對於此,對於位於與噴霧嘴行之正下方或正上方偏移之位置之部位(於前後之搬送方向上以平行線狀、紋狀之軌跡形成),噴霧壓、噴射衝擊較弱,亦產生儲液等,而導致蝕刻處理不足,電路寬度L過大。 On the other hand, the spray pressure and the jet impact are weaker on the portion located at a position offset directly below or directly above the spray nozzle row (formed in a parallel linear or striate path in the transport direction before and after). The liquid storage or the like is generated, resulting in insufficient etching treatment and excessive circuit width L.
如此,噴霧嘴之配置成為基板材A之均勻性之惡化、電路寬度L之偏差之較大之原因。 As described above, the arrangement of the spray nozzles causes deterioration of the uniformity of the base material A and a large variation in the circuit width L.
第2,於成本方面亦指出以下(A)、(B)之問題。 Second, the following problems (A) and (B) are also pointed out in terms of cost.
作為(A),如上所述,基板之電路B之微細化、高密度化顯著。然而,於先前技術,鑒於上述偏差問題之產生,而難以製造微細電路(之蝕刻)。尤其是難以利用比較簡易且於製造成本方面優異之蓋孔法進行製造。 As described above (A), the circuit B of the substrate is made finer and higher in density. However, in the prior art, it is difficult to manufacture a fine circuit (etching) in view of the above-described deviation problem. In particular, it is difficult to manufacture by a cap hole method which is relatively simple and excellent in manufacturing cost.
並且,微細電路之基板先前係利用複雜度高之半加成法(SAP,Semi-Additive-process)、或改質半加成法(MSAP,Modified-Semi-Additive-process)製造。並且,指出有製造成本上升之問題。 Further, the substrate of the fine circuit is previously manufactured by a semi-additive process (SAP, Semi-Additive-process) or a modified-semi-additive-process (MSAP). Also, it pointed out that there is a problem of rising manufacturing costs.
例如,對於銅箔厚度為18μm之基板材A,應用蓋孔法之極限係電路寬度L或電路間空間S為40μm~50μm。再者,圖6之(2)圖、(3)圖中之D表示電路B之頂面寬度(頂部寬度)。 For example, for the base material A having a copper foil thickness of 18 μm, the limit system circuit width L or the inter-circuit space S of the cover hole method is 40 μm to 50 μm. Further, in (2) of FIG. 6 and (D), D represents the top surface width (top width) of the circuit B.
作為(B),關於造成均勻性之惡化、電路寬度L之偏差產生、蝕刻 等處理不足產生之原因之一之儲液或滯留之對策,先前以來進行有各種技術之開發(例如,參照日本專利第4015667號公報中、或日本專利第4117135號公報)。 As (B), the deterioration of uniformity, the variation of the circuit width L, and etching are caused. In the case of the liquid storage or the retention of one of the causes of the insufficient treatment, various techniques have been developed in the past (for example, refer to Japanese Patent No. 4015667 or Japanese Patent No. 4117135).
然而,對於該等先前技術指出有如下問題,即,由於對噴霧嘴之噴射管採用例如搖頭振盪機構、水平振盪機構、斜向配置機構、或儲液真空機構等專用機構,故相應地原始成本上升。又,亦指出有雖作為儲液或滯留之對策有效,但作為針對上述偏差等之對策而言並不充分、或於極薄基板材之情形下會貼附於真空機構等。 However, it has been pointed out for the prior art that the original cost is correspondingly due to the use of a special mechanism such as a shaking head oscillating mechanism, a horizontal oscillating mechanism, an oblique arranging mechanism, or a liquid storage vacuum mechanism for the spray nozzle of the spray nozzle. rise. In addition, it is also noted that it is effective as a countermeasure against liquid storage or retention, but it is not sufficient for countermeasures such as the above-described variations, and it is attached to a vacuum mechanism or the like in the case of an extremely thin base material.
本發明之基板材之表面處理裝置係鑒於此種實際情況,為了解決上述先前技術之問題而完成者。 The surface treatment apparatus for a base material of the present invention is completed in order to solve the above problems of the prior art in view of such actual circumstances.
而且,本發明之目的在於提供一種基板材之表面處理裝置,可實現:第1,均勻性提高等、處理精度提高、防止產生電路寬度之偏差,並且,第2,於成本方面亦優異。 Further, an object of the present invention is to provide a surface treatment apparatus for a base material, which is capable of, for example, improving uniformity, improving processing accuracy, preventing variations in circuit width, and second, being excellent in cost.
解決此種問題之本發明之技術手段係如下述記載。關於第1發明,如下所述。第1發明之基板材之表面處理裝置,其特徵在於:被使用於電子電路基板之製造步驟中。而且,對以輸送機搬送之基板材,自噴霧嘴噴射處理液而進行表面處理。該噴霧嘴係於前後、左右配設多個,並且位於與所欲搬送之該基板材呈對向之位置。 The technical means of the present invention for solving such a problem is as follows. The first invention is as follows. A surface treatment apparatus for a base material according to a first aspect of the invention is characterized in that it is used in a manufacturing step of an electronic circuit board. Further, the base material to be conveyed by the conveyor is subjected to surface treatment by spraying the treatment liquid from the spray nozzle. The spray nozzles are disposed in a plurality of front and rear, left and right, and are located opposite to the base material to be conveyed.
並且,該噴霧嘴係基於由前後配置之該噴霧嘴相互間不於前後成 行而是依序於左右偏移之位置關係所構成之設定、該噴霧嘴與該基板材間之上下間隔之設定、及基於該上下間隔之設定之該噴霧嘴間之左右間距間隔之設定之組合,以自該噴霧嘴噴射之該處理液對該基板材進行均勻處理。 Moreover, the spray nozzle is based on the fact that the spray nozzles arranged from front to back are not in front of each other. The row is set in accordance with the positional relationship of the left and right offsets, the setting of the upper and lower intervals between the spray nozzle and the base material, and the setting of the left-right spacing between the spray nozzles based on the setting of the vertical spacing. In combination, the substrate is uniformly treated with the treatment liquid sprayed from the spray nozzle.
關於第2發明,如下所述。第2發明之基板材之表面處理裝置係於第1發明,其中,該表面處理裝置係於電子電路基板之製造步驟中之顯影步驟、蝕刻步驟、半蝕刻步驟、軟蝕刻步驟、快速蝕刻步驟、或剝離步驟中使用。 The second invention is as follows. A surface treatment apparatus for a base material according to a second aspect of the present invention, wherein the surface treatment apparatus is a development step, an etching step, a half etching step, a soft etching step, a rapid etching step, and a step of manufacturing the electronic circuit substrate. Or used in the stripping step.
並且,該表面處理裝置係作為顯影裝置、蝕刻裝置、或剝離裝置使用,而且,該噴霧嘴係用以噴射顯影液、蝕刻液、或剝離液作為該處理液。 Further, the surface treatment apparatus is used as a developing device, an etching device, or a peeling device, and the spray nozzle is configured to spray a developing solution, an etching solution, or a peeling liquid as the processing liquid.
關於第3發明,如下所述。 The third invention is as follows.
第3發明之基板材之表面處理裝置係於第2發明,其中,關於該噴霧嘴,上述位於前後之該噴霧嘴相互間之左右偏移間隔被設定為5mm以上~25mm以下。 According to a second aspect of the invention, in the spray nozzle, the distance between the right and left spray nozzles is set to be 5 mm or more and 25 mm or less.
關於第4發明,如下所述。 The fourth invention is as follows.
第4發明之基板材之表面處理裝置係於第3發明,其中,該噴霧嘴與該基板材間之上述上下間隔被設定為30mm以上~150mm以下。 According to a third aspect of the invention, in the surface treatment apparatus of the base material, the vertical distance between the spray nozzle and the base material is set to be 30 mm or more and 150 mm or less.
關於第5發明,如下所述。 The fifth invention is as follows.
第5發明之基板材之表面處理裝置係於第4發明,其中,該噴霧嘴間之上述左右間距間隔被設定為30mm以上~120mm以下。 According to a fourth aspect of the invention, in the surface treatment apparatus of the base material, the distance between the left and right pitches between the spray nozzles is set to be 30 mm or more and 120 mm or less.
關於第6發明,如下所述。 The sixth invention is as follows.
第6發明之基板材之表面處理裝置係於第5發明,其中,該噴霧嘴由扁平型構成,並且於上述顯影步驟或蝕刻步驟中,於水平面朝向 左右之寬度方向而設置。 A surface treatment apparatus for a base material according to a sixth aspect of the present invention, wherein the spray nozzle is formed of a flat type, and is oriented in a horizontal plane in the developing step or the etching step. Set in the width direction of the left and right.
關於第7發明,如下所述。 The seventh invention is as follows.
第7發明之基板材之表面處理裝置係於第5發明,其中,該噴霧嘴由扁平型構成,並且於上述半蝕刻步驟、軟蝕刻步驟、快速蝕刻步驟、或剝離步驟中,以於水平面上相對於左右之寬度方向朝向前後之搬送方向傾斜4°以上~10°以下之噴嘴角度而設置。 A surface treatment apparatus for a base material according to a seventh aspect of the present invention, wherein the spray nozzle is formed of a flat type, and is in a horizontal etching manner in the half etching step, the soft etching step, the rapid etching step, or the peeling step. It is set so that the width direction of the left and right is inclined toward the front and rear conveyance directions by a nozzle angle of 4° or more to 10° or less.
關於第8發明,如下所述。 The eighth invention is as follows.
第8發明之基板材之表面處理裝置係於第6或7發明,其中,供給該處理液之噴射管係沿著前後之搬送方向以既定之左右間距間隔排列設置複數根,或者,沿著左右之寬度方向以既定之前後間距間隔排列設置複數根。 The surface treatment apparatus of the base material according to the eighth aspect of the present invention, wherein the injection pipe for supplying the treatment liquid is arranged in a plurality of intervals at a predetermined left-right pitch along a front-to-back conveyance direction, or The width direction is arranged with a plurality of roots arranged at predetermined intervals.
而且,該噴霧嘴於該噴射管以每隔既定間距間隔設置複數個。 Further, the spray nozzles are provided at a plurality of intervals at predetermined intervals in the spray pipe.
本發明由於包含此種手段,故成為如下所述。 Since the present invention includes such means, it is as follows.
(1)該表面處理裝置被使用於電子電路基板之製造步驟、例如蝕刻步驟中。 (1) The surface treatment apparatus is used in a manufacturing step of an electronic circuit board, for example, an etching step.
(2)並且,該表面處理裝置係自噴霧嘴噴射處理液,而對基板材進行表面處理。 (2) Further, the surface treatment apparatus sprays the treatment liquid from the spray nozzle to surface-treat the base material.
(3)而且,表面處理裝置之特徵在於:將噴霧嘴之配設位置設定等構成進行各種組合而採用。 (3) Further, the surface treatment apparatus is characterized in that the spray nozzles are disposed at various positions and are configured in various combinations.
(4)即,首先,將噴霧嘴設定為如下位置關係,即,前後配置之相互間不於前後成行,而是於左右橫向依序偏移。該左右偏移間隔被設定為5mm~25mm。 (4) That is, first, the spray nozzle is set to a positional relationship in which the front and rear arrangements are not aligned with each other, but are sequentially shifted in the left and right directions. The left and right offset intervals are set to 5 mm to 25 mm.
(5)除此以外,噴霧嘴與基板材間之高度即上下間隔被設定為30mm~150mm,較理想為50mm~100mm。 (5) In addition to this, the height between the spray nozzle and the base material, that is, the upper and lower intervals is set to 30 mm to 150 mm, preferably 50 mm to 100 mm.
(6)而且,進而,噴霧嘴相互間之左右間距間隔被設定為30mm~120mm。 (6) Further, the distance between the right and left spray nozzles is set to be 30 mm to 120 mm.
(7)再者,噴霧嘴代表性為由扁平型構成,並且朝向左右之寬度方向(以0°或傾斜0°左右之噴嘴角度)而設置,或以傾斜4°~10°之噴嘴角度而設置。 (7) Further, the spray nozzle is typically formed of a flat type and is disposed in the width direction of the left and right (noise angle of 0° or about 0°) or by a nozzle angle of 4° to 10°. Settings.
(8)該表面處理裝置中,藉由將噴霧嘴之此種配設位置設定等構成組合而採用,從而提昇基板材之處理精度,實現均勻處理。 (8) The surface treatment apparatus is used by combining such a setting position of the spray nozzle, and the like, thereby improving the processing precision of the base material and achieving uniform processing.
(9)即,關於基板材,避免產生處理液之噴射衝擊之強弱部位,而整體地、平均地、均勻地進行表面處理。並且,消除所形成之電路寬度之大小偏差。尤其是於蝕刻步驟中,蝕刻深度之均一性即均勻性提昇。 (9) That is, with respect to the base sheet, the surface portion of the spray impact of the treatment liquid is prevented from being generated, and the surface treatment is performed integrally, uniformly, and uniformly. Also, the magnitude deviation of the formed circuit width is eliminated. Especially in the etching step, the uniformity of the etching depth, that is, the uniformity is improved.
(10)而且,該等藉由將噴霧嘴之配設位置設定等進行組合而以簡易之構成容易地實現。 (10) Further, these are easily realized by a simple configuration by combining the setting positions of the spray nozzles and the like.
(11)又,伴隨著所形成之電路寬度之偏差消除、均勻性之改善,而可利用蓋孔法製造微細電路。 (11) Further, the microcircuit can be manufactured by the lid hole method as the deviation of the formed circuit width is eliminated and the uniformity is improved.
(12)再者,實現電路寬度之偏差消除、均勻性之改善,當然於其過程中,亦可抑制儲液或滯留之產生。並且,亦無須採用應對儲液用之專用機構。 (12) Furthermore, the elimination of the deviation of the circuit width and the improvement of the uniformity are achieved, and of course, the occurrence of the liquid storage or the retention can be suppressed in the process. Moreover, there is no need to use a special mechanism for handling liquid storage.
(13)因此,本發明之基板材之表面處理裝置發揮以下效果。 (13) Therefore, the surface treatment apparatus for a base material of the present invention exerts the following effects.
第1,提昇均勻性等、提昇處理精度、防止產生電路寬度之偏差。 First, the uniformity is improved, the processing accuracy is improved, and variations in circuit width are prevented.
本發明之基板材之表面處理裝置係藉由噴霧嘴之配設位置設定等之組合而對基板材進行均勻處理。 The surface treatment apparatus for the base material of the present invention uniformly treats the base material by a combination of the arrangement positions of the spray nozzles and the like.
關於基板材,要抑制如上述該種先前技術般之電路寬度成為過大之部位之產生,並且抑制電路寬度變窄變細而過小之部位之產生,並且減輕電路寬度之偏差,尤其是關於蝕刻,提昇均勻性,減輕電路寬度之偏差。 With regard to the base material, it is necessary to suppress the occurrence of a portion where the circuit width is excessively large as in the above-described prior art, and to suppress the occurrence of a portion where the circuit width is narrowed and become too small, and to reduce variations in circuit width, particularly regarding etching, Improve uniformity and reduce variations in circuit width.
而且,本發明發揮此種效果對於電路之微細化、高密度化進展之基板而言意義較大。例如,亦可回避如該種先前技術般電路之通電容量、電阻值等相對於標準值而變動之情況,期望基板不良之減輕。 Further, the present invention exerts such an effect on a substrate in which the circuit is made finer and higher in density. For example, it is also possible to avoid the case where the current-carrying capacity, the resistance value, and the like of the circuit as described above are changed with respect to the standard value, and it is desired to reduce the substrate failure.
第2,於成本方面優異之基礎上實現第1效果。本發明之基板材之表面處理裝置係藉由噴霧嘴之配設位置設定等之組合而實現上述第1效果。即,藉由簡易之構成而容易於成本方面優異之基礎上實現。又,根據該表面處理裝置,伴隨著均勻性之改善、電路寬度偏差之防止,而可利用於製造成本方面優異之蓋孔法製造微細電路(之蝕刻)。複雜度高且製造成本提高之SAP法或MSAP法之必要性降低。由此自該方面而言,亦於成本方面優異。 Second, the first effect is achieved on the basis of excellent cost. The surface treatment apparatus for a base material of the present invention achieves the first effect described above by a combination of setting positions of spray nozzles and the like. In other words, it is easy to achieve on the basis of cost advantage by a simple configuration. Moreover, according to the surface treatment apparatus, it is possible to manufacture a fine circuit (etching) by a lid hole method which is excellent in manufacturing cost as the uniformity is improved and the circuit width variation is prevented. The need for SAP or MSAP methods with high complexity and increased manufacturing costs is reduced. From this point of view, it is also excellent in terms of cost.
進而,伴隨著均勻性之改善、電路寬度偏差之防止,而於該表面處理裝置,無須如上述該種先前技術般採用原始成本提高之應對儲液用之專用機構,且亦無須採用應對滯留用之專用機構。由此自該方面而言,亦於成本方面優異。 Further, with the improvement of the uniformity and the prevention of the variation in the circuit width, the surface treatment apparatus does not need to use the special mechanism for the liquid storage which is improved in the original cost as in the prior art described above, and does not need to be used for the retention. A dedicated institution. From this point of view, it is also excellent in terms of cost.
如此,該種先前技術所存在之問題全部得以解決等本發明所發揮 之效果顯著較大。 Thus, all the problems of the prior art are solved, and the present invention is exerted. The effect is significantly larger.
A‧‧‧基板材 A‧‧‧ base plate
B‧‧‧電子電路(電路) B‧‧‧Electronic circuit (circuit)
C‧‧‧電路深度(電路高度) C‧‧‧D Circuit Depth (Circuit Height)
D‧‧‧頂面寬度(頂部寬度) D‧‧‧Top width (top width)
E‧‧‧電子電路基板(基板) E‧‧‧Electronic circuit board (substrate)
F‧‧‧搬送方向 F‧‧‧Transfer direction
G‧‧‧處理液 G‧‧‧ treatment solution
H‧‧‧寬度方向 H‧‧‧Width direction
J‧‧‧上下方向 J‧‧‧Up and down direction
K‧‧‧左右偏移間隔 Offset interval around K‧‧
L‧‧‧電路寬度(底部寬度) L‧‧‧Circuit width (bottom width)
M‧‧‧上下間隔 M‧‧‧ upper and lower intervals
N‧‧‧左右間距間隔 N‧‧‧ spacing interval
S‧‧‧電路間空間 S‧‧‧Inter-circuit space
θ‧‧‧噴嘴角度 θ ‧‧‧ nozzle angle
1‧‧‧表面處理裝置 1‧‧‧ surface treatment equipment
2‧‧‧處理室 2‧‧‧Processing room
3‧‧‧輸送機 3‧‧‧Conveyor
4‧‧‧輪 4‧‧‧ round
5‧‧‧噴霧嘴 5‧‧‧ spray nozzle
6‧‧‧液槽 6‧‧‧ liquid tank
7‧‧‧泵 7‧‧‧ pump
8‧‧‧配管 8‧‧‧Pipe
9‧‧‧噴射管 9‧‧‧Steam tube
10‧‧‧輸送機軸 10‧‧‧Conveyor shaft
圖1係關於本發明之基板材之表面處理裝置之供於用以實施發明之形態之說明之該表面處理裝置之主要部分之俯視圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the principal part of a surface treatment apparatus for a substrate according to the present invention, which is provided for explaining the form of the invention.
圖2係表示供於用以實施該發明之形態之說明之該表面處理裝置之一例。而且,(1)圖為側視圖,(2)圖為俯視圖。 Fig. 2 is a view showing an example of the surface treatment apparatus for explaining the form of the invention. Moreover, (1) is a side view, and (2) is a top view.
圖3係表示供於用以實施該發明之形態之說明之該表面處理裝置之另一例。而且,(1)圖為側視圖,(2)圖為俯視圖。 Fig. 3 is a view showing another example of the surface treatment apparatus for explaining the form of the invention. Moreover, (1) is a side view, and (2) is a top view.
圖4係供於用以實施該發明之形態之說明,且(1)圖為圖3之例之主要部分之側視圖,(2)圖為該主要部分之俯視圖。 Fig. 4 is a view for explaining the form of the invention, and (1) is a side view of a main portion of the example of Fig. 3, and (2) is a plan view of the main portion.
圖5供於用以實施該發明之形態之說明。而且,(1)圖為放大圖3之例之主要部分之俯視圖。(2)圖表示實施例之測定點,為俯視說明圖。 Figure 5 is for illustration of a form for carrying out the invention. Further, (1) is a plan view showing an enlarged main portion of the example of FIG. 3. (2) The figure shows the measurement points of the examples, and is a plan view.
圖6供於基板材(電子電路基板)之說明。而且,(1)圖為其一例之俯視說明圖。(2)圖表示所形成之電路之一例,為前視剖面說明圖,(3)圖表示所形成之電路之另一例,為前視剖面說明圖。 Fig. 6 is for explanation of a base material (electronic circuit board). Moreover, (1) is a top view explanatory view of an example. (2) The figure shows an example of the circuit formed, which is a front cross-sectional explanatory view, and (3) shows another example of the circuit formed, and is a front cross-sectional explanatory view.
以下,對用以實施本發明之形態進行詳細說明。 Hereinafter, the form for carrying out the invention will be described in detail.
本發明之基板材A之表面處理裝置被使用於電子電路基板E之製造步驟中。因此,首先,一面參照圖6一面對成為前提之電子電路基板E等進行通常說明。 The surface treatment apparatus of the base material sheet A of the present invention is used in the manufacturing steps of the electronic circuit board E. Therefore, first, the electronic circuit board E and the like which are the premise will be described with reference to FIG.
電子電路基板E用於在視聽(AV,Audio Visual)設備、電腦、行動電話終端、行動電話、數位相機、其他各種電子機器、IT相關設備中 形成基幹之電連接時。並且,電子電路基板E係於絕緣層之外表面或內部形成用以連接半導體零件間之電路圖案而成。 The electronic circuit board E is used in audio and video (AV, Audio Visual) devices, computers, mobile phone terminals, mobile phones, digital cameras, various other electronic devices, and IT related devices. When the electrical connection of the backbone is formed. Further, the electronic circuit board E is formed on the outer surface or inside of the insulating layer to form a circuit pattern for connecting between the semiconductor components.
而且,電子電路基板E除被分為單面基板與雙面基板以外,還有多層基板(含增層法之基板)、其他各種基板。又,電子電路基板E亦被分為硬質之硬質基板與膜狀之可撓性基板。 Further, the electronic circuit board E is divided into a single-sided board and a double-sided board, and has a multilayer board (substrate including a build-up method) and various other substrates. Moreover, the electronic circuit board E is also divided into a hard hard substrate and a film-shaped flexible substrate.
又,作為此種電子電路基板E之一部分,亦出現有將積體電路(IC,Integrated Circuit)、大規模積體電路(LSI,Large Scale Integrated)元件、被動零件、驅動零件、電容器等半導體零件,與電路B一體地組裝而成之模組基板(半導體一體式封裝基板)。 Further, as part of such an electronic circuit board E, semiconductor components such as an integrated circuit (IC), a large-scale integrated circuit (LSI, Large Scale Integrated) element, a passive component, a drive component, and a capacitor are also present. A module substrate (semiconductor integrated package substrate) assembled integrally with the circuit B.
進而,亦出現有於玻璃基材埋入有電路B以及半導體零件之玻璃基板,即液晶顯示裝置(LCD,Liquid Crystal Display)用玻璃基板,進而有晶片尺度封裝(CSP,Chip Scale Package)、塑封球柵陣列(PBGA,Plastic Ball Grid Array)、觸控面板等。本說明書中,所謂電子電路基板(本說明書中,有時亦簡稱為基板)E,除先前以來之印刷配線基板之外,亦廣泛包含上述基板。 Further, there is also a glass substrate in which a circuit B and a semiconductor component are embedded in a glass substrate, that is, a glass substrate for a liquid crystal display (LCD), and a chip scale package (CSP), a plastic package. Ball grid array (PBGA, Plastic Ball Grid Array), touch panel, and the like. In the present specification, the electronic circuit board (hereinafter sometimes referred to simply as the board) E includes the above-mentioned board in addition to the printed wiring board.
而且,電子電路基板E之小型輕量化、極薄化、可撓化等進展突出,所形成之電子電路(本說明書中,有時亦簡稱為電路)B之微細化、高密度化亦顯著。 In addition, the size, weight reduction, flexibility, and the like of the electronic circuit board E are prominent, and the electronic circuit (in the present specification, sometimes referred to simply as the circuit) B is also made finer and more dense.
被使用於電子電路基板E之製造步驟中之基板材A,代表性為縱橫尺寸為600mm×500mm、或500mm×400mm、或500mm×330mm之尺寸,並且厚度為0.06mm~1.6mm左右者。 The base material A used in the manufacturing steps of the electronic circuit board E is typically a dimension having an aspect ratio of 600 mm × 500 mm, or 500 mm × 400 mm, or 500 mm × 330 mm, and a thickness of about 0.06 mm to 1.6 mm.
作為此種電子電路基板E之製造方法,減色法(濕式處理法)具代表性(參照上述背景技術之先前技術欄),但已知有半加成法(SAP法)、其他各種製造方法。當然,本發明適用於上述各種製造方法之步驟。 關於電子電路基板E等,如以上所述。 As a method of manufacturing such an electronic circuit board E, a subtractive color method (wet processing method) is representative (refer to the prior art column of the above background art), but a semi-additive method (SAP method) and various other manufacturing methods are known. . Of course, the present invention is applicable to the steps of the various manufacturing methods described above. The electronic circuit board E and the like are as described above.
繼而,參照圖2、圖3對表面處理裝置1進行通常說明。 Next, the surface treatment apparatus 1 will be generally described with reference to Figs. 2 and 3 .
表面處理裝置1被使用於此種電子電路基板E之製造步驟中。並且,於其處理室2內,一面以輸送機3於前後之搬送方向F水平搬送基板材A,一面自噴霧嘴5噴射處理液G,而對基板材A進行表面處理。 The surface treatment apparatus 1 is used in the manufacturing steps of such an electronic circuit board E. Then, in the processing chamber 2, the substrate A is horizontally conveyed by the conveyor 3 in the transport direction F before and after, and the processing liquid G is sprayed from the spray nozzle 5 to surface-treat the base material A.
圖示例之輸送機3係由上下成對且於前後左右配設有多個之輪4群所構成。圖示例之輪4直徑為30mm,輪4間之間距為25mm,輪4係以於搬送方向F上部分重疊之方式配設。 The conveyor 3 of the illustrated example is composed of a plurality of wheels 4 arranged in pairs in the upper and lower sides. The wheel 4 of the illustrated example has a diameter of 30 mm, and the distance between the wheels 4 is 25 mm, and the wheel 4 is disposed so as to partially overlap in the conveying direction F.
噴霧嘴5於前後之搬送方向F及左右之寬度方向H配設多個,並且為了與所要搬送之基板材A上下相對而對向配置,以此方式噴射處理液G。圖示例中,遍及所要搬送之基板材A之上下而排列設置,而對基板材A之正背兩面進行表面處理。 A plurality of the spray nozzles 5 are disposed in the transport direction F and the left and right width directions H in the front and rear directions, and the treatment liquid G is sprayed in such a manner as to face up and down with respect to the base material A to be conveyed. In the example of the figure, the base sheets A to be conveyed are arranged above and below, and the front and back sides of the base sheet A are surface-treated.
而且,表面處理裝置1被使用於電子電路基板E之製造步驟中之顯影步驟、蝕刻步驟、半蝕刻步驟、軟蝕刻步驟、快速蝕刻步驟、或剝離步驟等中。 Further, the surface treatment apparatus 1 is used in a developing step, an etching step, a half etching step, a soft etching step, a rapid etching step, a peeling step, and the like in the manufacturing steps of the electronic circuit substrate E.
半蝕刻步驟係作為基板材A之準備步驟而對銅箔表面形狀進行加工以將銅箔厚度切為較薄。軟蝕刻步驟係作為基板材A之前處理步驟而預先對銅箔表面進行粗化處理。快速蝕刻步驟係作為半加成法(SAP法)之後處理而實施。而且,表面處理裝置1係作為顯影裝置、蝕刻裝置、半蝕刻裝置、軟蝕刻裝置、快速蝕刻裝置、或剝離裝置等而使用。由此,該噴霧嘴5係用以噴射顯影液、蝕刻液、半蝕刻液、軟蝕刻液、 快速蝕刻液、或剝離液等作為處理液G。 The half etching step is performed as a preparation step of the base material A to process the surface shape of the copper foil to cut the thickness of the copper foil to be thin. The soft etching step is performed by roughening the surface of the copper foil in advance as a pre-processing step of the base material A. The rapid etching step is carried out as a post-additive method (SAP method). Further, the surface treatment apparatus 1 is used as a developing device, an etching device, a half etching device, a soft etching device, a rapid etching device, or a peeling device. Thereby, the spray nozzle 5 is used for spraying a developing solution, an etching solution, a semi-etching liquid, a soft etching liquid, A rapid etching liquid, a peeling liquid, or the like is used as the processing liquid G.
處理液G自噴霧嘴5噴射,→於對基板材A進行表面處理後,→流至處理室2下部之液槽6,並被回收、貯存。→繼而,事後再次經由泵7、過濾器(未圖示)、配管8、噴射管9等,→流向噴霧嘴5,循環、再使用。再者,圖2之(1)圖、圖3之(1)圖、圖4中J表示上下方向。 The treatment liquid G is sprayed from the spray nozzle 5, and after surface treatment of the base material A, it flows to the liquid tank 6 at the lower portion of the treatment chamber 2, and is recovered and stored. Then, afterwards, the pump 7, the filter (not shown), the pipe 8, the injection pipe 9, and the like are again flowed to the spray nozzle 5, and are circulated and reused. Further, Fig. 2 (1), Fig. 3 (1), and Fig. 4 indicate the vertical direction.
而且,噴霧嘴5於噴射管9以每隔既定間距間隔設置有複數個。將處理液G供給至噴霧嘴5之噴射管9係如圖2所示之例、或圖3、圖4、圖5之(1)圖等所示之例般而配設。 Further, the spray nozzles 5 are provided in the injection pipe 9 at a plurality of intervals at predetermined intervals. The injection pipe 9 for supplying the treatment liquid G to the spray nozzle 5 is disposed as in the example shown in FIG. 2 or as shown in FIG. 3, FIG. 4, FIG. 5 (1), and the like.
圖2所示之例中,於前後之搬送方向F上平行地排列設置有複數根噴射管9,並於相互間存在既定之左右間距間隔。圖3等所示之例中,沿著與搬送方向F呈直角之左右寬度方向H平行地排列設置有複數根噴射管9,並於相互間存在既定之前後間隔。 In the example shown in Fig. 2, a plurality of injection pipes 9 are arranged in parallel in the transport direction F before and after, and there is a predetermined left-right pitch interval therebetween. In the example shown in Fig. 3 and the like, a plurality of injection pipes 9 are arranged in parallel along the width direction H in the right and left directions at right angles to the conveyance direction F, and there are predetermined front and rear intervals between them.
再者,表面處理裝置1之處理室2內之處理通常如圖示例般於氣體環境中進行,但不限於此,亦可於液體中進行。 Further, the processing in the processing chamber 2 of the surface treatment apparatus 1 is usually performed in a gas atmosphere as shown in the example, but is not limited thereto, and may be performed in a liquid.
關於表面處理裝置1,如以上所述。 Regarding the surface treatment apparatus 1, as described above.
以下,參照圖1~圖6對本發明之基板材A之表面處理裝置1進行說明。 Hereinafter, the surface treatment apparatus 1 of the base material sheet A of the present invention will be described with reference to Figs. 1 to 6 .
首先,關於其概要,如下所述。本發明之表面處理裝置1之特徵在於噴霧嘴5之配設位置設定之組合。 First, regarding its outline, it is as follows. The surface treatment apparatus 1 of the present invention is characterized by a combination of arrangement position setting of the spray nozzles 5.
即,噴霧嘴5係基於前後配置之噴霧嘴5相互間不於前後成行而是左右偏移僅以間隔K依序左右偏移的位置關係之設置、噴霧嘴5與 基板材A間之上下間隔M之設定、及基於上下間隔M之設定之噴霧嘴5間之左右間距間隔N之設定之組合,而對基板材A進行均勻處理。即,以自噴霧嘴5噴射之處理液G對基板材A進行均勻處理。本發明之概要如上所述。以下,對此種本發明之基板材A之表面處理裝置1進行更詳細之敍述。 In other words, the spray nozzle 5 is based on the positional relationship in which the spray nozzles 5 arranged in the front and rear are not aligned with each other, but are shifted left and right by only the interval K, and the spray nozzle 5 is The base sheet A is uniformly treated by a combination of the setting of the upper and lower intervals M between the base sheets A and the setting of the left-right spacing N between the spray nozzles 5 based on the upper and lower intervals M. That is, the base material A is uniformly treated by the treatment liquid G sprayed from the spray nozzle 5. The outline of the present invention is as described above. Hereinafter, the surface treatment apparatus 1 of the base material sheet A of the present invention will be described in more detail.
首先,如圖1所示,噴霧嘴5於前後、左右配設多個。而且,於對前後之搬送方向F進行觀察之情形下,位於前後之噴霧嘴5相互間係以於前後之搬送方向F呈對向配置且不成行之方式,於左右之橫寬方向H稍微偏移而設置。即,前後之噴霧嘴5間係以於搬送方向F分別疊加各1行而不重疊之方式進行定位設定。即,以存在左右偏移間隔K之方式進行定位設定。再者,前後對向配置之噴霧嘴5間只要左右偏移即可。即,亦可於搬送方向F,例如每5行~10行以上存在位於相同之左右位置之噴霧嘴5。 First, as shown in FIG. 1, a plurality of spray nozzles 5 are disposed in front, rear, and left and right. Further, in the case of observing the transport direction F in the front and rear, the spray nozzles 5 located in front and rear are arranged in the opposite direction to the transport direction F in the front and rear directions, and are not arranged in a row, and are slightly offset in the lateral width direction H of the left and right. Move and set. In other words, the front and rear spray nozzles 5 are positioned and positioned so as to overlap each of the transport directions F without overlapping. That is, the positioning setting is performed such that there is a left-right offset interval K. Further, the spray nozzles 5 arranged in the front-rear direction may be shifted left and right. In other words, the spray nozzles 5 located at the same left and right positions may be present in the transport direction F, for example, every 5 rows to 10 rows or more.
而且,此種噴霧嘴5之左右偏移間隔K之設定係根據噴射管9之配置而實現。 Further, the setting of the left-right offset interval K of the spray nozzle 5 is realized in accordance with the arrangement of the injection pipe 9.
首先,關於圖2所示之例,如下所述。圖2之例中,噴射管9排列設置於前後之搬送方向F。而且,如圖2之(2)圖所示,不需使該噴射管9準確地朝向搬送方向F,可朝向左右之寬度方向H稍微傾斜而配置。 First, the example shown in Fig. 2 is as follows. In the example of Fig. 2, the injection pipes 9 are arranged in the front and rear conveying directions F. Further, as shown in FIG. 2(2), the injection pipe 9 does not need to be accurately oriented in the conveyance direction F, and can be disposed slightly inclined in the width direction H of the left and right.
圖2之例係以此方式實現前後之噴霧嘴5相互間之左右偏移間隔K之設定。 In the example of Fig. 2, the setting of the left and right offset intervals K between the front and rear spray nozzles 5 is achieved in this manner.
相對於此,關於圖3、圖4、圖5之(1)圖等所示之例,如下所述。 該例中,噴射管9係沿著左右之寬度方向H而排列設置。而且,如圖3之(2)圖、圖4之(2)圖所示,該噴射管9係配設成使以既定間距間隔設置之噴霧嘴5之位置於左右依序偏移。 On the other hand, examples shown in FIG. 3, FIG. 4, FIG. 5 (1), and the like are as follows. In this example, the injection pipes 9 are arranged in the width direction H of the left and right. Further, as shown in Fig. 3 (2) and Fig. 4 (2), the injection pipe 9 is disposed such that the positions of the spray nozzles 5 provided at regular intervals are sequentially shifted to the right and left.
即,圖3等之例中,以於前後觀察時設置於噴射管9之噴霧嘴5之位置左右偏移之方式,使噴霧嘴5之左右位置偏移而配設各噴射管9。 In other words, in the example of FIG. 3 and the like, each of the injection pipes 9 is disposed such that the position of the spray nozzle 5 provided in the injection pipe 9 is shifted to the left and right in the front-rear direction, and the left and right positions of the spray nozzle 5 are shifted.
圖3等之例係以此方式實現前後之噴霧嘴5相互間之左右偏移間隔K之設定。 In the example of Fig. 3 and the like, the setting of the left and right offset intervals K between the front and rear spray nozzles 5 is realized in this manner.
關於設定左右偏移間隔K之功能,如下所述。自噴霧嘴5噴射之處理液G係對位於其正下方或正上方之基板材A之部位,以較強之噴霧壓、噴射衝擊進行表面處理。例如蝕刻步驟中,基板材A之位於噴霧嘴5之正上方或正下方之部位係以所噴射之蝕刻液受到較強噴霧壓、噴射衝擊,而促進蝕刻。 The function of setting the left and right offset interval K is as follows. The treatment liquid G sprayed from the spray nozzle 5 is subjected to surface treatment with a strong spray pressure and jet impact on a portion of the base material A located directly below or directly above it. For example, in the etching step, the portion of the base sheet A located directly above or below the spray nozzle 5 is subjected to a strong spray pressure and a jet impact by the etchant sprayed to promote etching.
相對於此,對於基板材A之位於與噴霧嘴5之正上方或正下方偏移之部位,噴射衝擊較弱。由此,若如此則有例如蝕刻不足、其他處理不足之可能性。 On the other hand, the ejection impact is weaker at the portion of the base sheet A which is located directly above or below the spray nozzle 5. Therefore, for example, there is a possibility that the etching is insufficient and the other processing is insufficient.
因此,本發明中,使前後配置之噴霧嘴5相互間存在左右偏移間隔K而依序設置。 Therefore, in the present invention, the spray nozzles 5 arranged in the front and rear are arranged in order with a left-right offset interval K therebetween.
藉此,基板材A之受到較強之噴霧壓、噴射衝擊之部位於軌跡上不重疊而被分散。受到較強之噴射衝擊而被蝕刻等經表面處理之部位一點點錯開而進行。由此,結果基板材A被整體地、平均地、均勻地實施蝕刻等表面處理。前後之噴霧嘴5間之左右偏移間隔K之設定發揮此種功能。 Thereby, the portion of the base sheet A subjected to the strong spray pressure and the jet impact is dispersed without being overlapped on the trajectory. The surface treated portion, such as etching, which is subjected to a strong jet impact, is slightly staggered. Thereby, as a result, the base material A is subjected to surface treatment such as etching as a whole, evenly and uniformly. The setting of the left and right offset intervals K between the front and rear spray nozzles 5 exhibits such a function.
且說,前後配置之噴霧嘴5相互間之左右偏移間隔K被 設定為5mm以上~25mm以下。 And said that the spray nozzles 5 arranged before and after are offset from each other by the interval K Set to 5mm or more to 25mm or less.
於左右偏移間隔K未滿5mm之情形,偏移過小,難以發揮上述偏移功能。即,與上述先前技術同樣地,即根據噴霧嘴5於前後之搬送方向F成行之情形,而於基板材A產生強弱衝擊部位。因此,於前後之搬送方向F呈平行線狀、紋狀地形成蝕刻不足部位等表面處理不足部位。 In the case where the left-right offset interval K is less than 5 mm, the offset is too small, and it is difficult to exhibit the above-described offset function. In other words, in the same manner as in the above-described prior art, the strong and weak impact portions are generated in the base material sheet A in accordance with the case where the spray nozzles 5 are formed in the front and rear conveyance directions F. Therefore, in the transport direction F before and after, the surface-treated portions such as the under-etched portions are formed in a parallel line shape or a striated shape.
於左右偏移間隔K超過25mm之情形,亦難以發揮上述偏移功能。 In the case where the left-right offset interval K exceeds 25 mm, it is also difficult to exert the above-described offset function.
即,對於基板材A,若設定左右偏移間隔K則會間隙地產生無法覆蓋之強弱衝擊部位。由此,呈平行線狀、紋狀地形成蝕刻不足部位等表面處理不足部位。 In other words, when the left and right offset intervals K are set for the base sheet A, a strong and weak impact portion that cannot be covered is generated in a gap. Thereby, a surface-treated portion such as an under-etched portion is formed in a parallel line shape or a striated shape.
再者,於圖1、圖2之(2)圖、圖3之(2)圖、圖4之(2)中,左右偏移間隔K之圖示表現為概略性。即,其尺寸線之採取方式等圖示記載為模式性、誇張性、說明性者。 Further, in FIGS. 1 and 2 (2), FIG. 3 (2), and FIG. 4 (2), the illustration of the left-right offset interval K is schematically shown. In other words, the manner in which the size line is taken and the like are described as being pattern, exaggeration, and explanatory.
關於前後噴霧嘴5間之左右偏移間隔K,如上所述。 The left-right offset interval K between the front and rear spray nozzles 5 is as described above.
本發明中,關於噴霧嘴5,設定上述之前後相互間之左右偏移間隔K,並且將噴霧嘴5與基板材A間之高度間隔即上下間隔M設定為30mm以上~150mm以下。 In the present invention, the spray nozzle 5 is set to have a left-right offset interval K between the front and rear, and the height interval between the spray nozzle 5 and the base material A, that is, the vertical interval M is set to be 30 mm or more to 150 mm or less.
即,首先,藉由上述左右偏移間隔K之設定而實現均勻蝕刻等表面處理。避免於前後之搬送方向F呈平行線狀、紋狀地形成強弱噴射衝擊部位與蝕刻等表面處理不足部位。實驗上亦證實該等。 That is, first, surface treatment such as uniform etching is realized by setting the left and right offset intervals K. It is avoided that the front and rear transfer directions F are formed in a parallel line shape or a striated shape to form a weakly-impacted impact portion and a surface-treated portion such as etching. This has also been confirmed experimentally.
然而,實驗之結果為,雖為少許,但亦於左右之寬度方向H呈平行線狀、紋狀地形成蝕刻不足部位等表面處理不足部位。雖於前後之 搬送方向F空出間隔,但雖為些許,亦殘留形成有蝕刻不足部位等表面處理不足部位。 However, as a result of the experiment, although it is a little, the surface-treated portion such as an under-etched portion is formed in a parallel line shape or a striated shape in the width direction H of the left and right. Although before and after Although the interval in the transport direction F is vacant, a small amount of surface-treated portions such as an under-etched portion are left to be formed.
而且,此種於寬度方向H之蝕刻不足之部位藉由如圖2之(1)圖、圖3之(1)圖、圖4之(1)圖等所示般,將噴霧嘴5與基板材A間之上下間隔M設定為30mm以上~150mm以下而被消除。由此,關於基板材A,可確實地實現整體性、平均性、均勻性之蝕刻處理等表面處理。 Further, such a portion which is insufficiently etched in the width direction H is formed by the spray nozzle 5 and the base as shown in Fig. 2 (1), Fig. 3 (1), Fig. 4 (1), and the like. The upper and lower intervals M between the sheets A are set to be 30 mm or more to 150 mm or less and are eliminated. Thereby, regarding the base material sheet A, surface treatment such as etching treatment of integrity, averageness, and uniformity can be surely achieved.
尤其是,若將上下間隔M設定為50mm以上~100mm以下,則實驗上獲得最佳之結果,可獲得更高之均勻性。噴霧嘴5與基板材A間之上下間隔M設定係如此般發揮功能。 In particular, if the upper and lower intervals M are set to 50 mm or more to 100 mm or less, an optimum result is obtained experimentally, and higher uniformity can be obtained. The upper and lower intervals M between the spray nozzle 5 and the base plate A are set to function as described above.
由於圖案蝕刻時之蝕刻因數提高等原因,利用噴霧嘴5對基板材A噴射處理液G之強化衝擊之需求較強。因此,噴霧嘴5與基板材A間之上下間隔M亦如上述般被設定為較短、較近。 Due to the improvement of the etching factor at the time of pattern etching, etc., the demand for the enhanced impact of the spray treatment liquid G on the base material A by the spray nozzle 5 is strong. Therefore, the upper and lower intervals M between the spray nozzle 5 and the base material A are also set to be shorter and closer as described above.
再者,於上下間隔M未滿30mm之情形,噴霧嘴5與基板材A間過於接近,因此難以發揮上述左右偏移間隔K之偏移功能。即,對基板材A之位於噴霧嘴5之正上方或正下方之部位之噴霧壓、噴射衝擊變強。相對於此,對位於自正上方或正下方偏移之位置之部位之噴霧壓、噴射衝擊變弱,因此產生蝕刻不足、處理不足。 In addition, when the upper and lower intervals M are less than 30 mm, the spray nozzle 5 and the base material A are too close to each other, so that it is difficult to exhibit the shift function of the left and right offset intervals K. That is, the spray pressure and the jet impact of the portion of the base sheet A located directly above or below the spray nozzle 5 become stronger. On the other hand, since the spray pressure and the jet impact at the portion located at a position shifted from the upper side or the lower side are weak, the etching is insufficient and the processing is insufficient.
相對於此,於上下間隔M超過150mm之情形,噴霧嘴5與基板材A間變得過遠,而導致整體上蝕刻不足、處理不足。即,對基板材A整體之噴射衝擊較弱,蝕刻速率等處理速率降低。 On the other hand, in the case where the upper and lower intervals M exceed 150 mm, the spray nozzle 5 and the base material sheet A become too far apart, resulting in insufficient etching and insufficient processing as a whole. That is, the ejection impact on the entire substrate A is weak, and the processing rate such as the etching rate is lowered.
關於噴霧嘴5與基板材A間之上下間隔M,如上所述。 The upper and lower intervals M between the spray nozzle 5 and the base material A are as described above.
為了對基板材A實施整體性、平均性、均勻性之蝕刻等表面處理,除上述以外,進而考慮噴霧嘴5間之左右間距間隔N亦成為要點。 In order to perform surface treatment such as etching, averaging, and uniformity of the base material A, in addition to the above, it is also considered that the distance N between the spray nozzles 5 is also a point.
即,關於噴霧嘴5,除上述前後相互間之左右偏移間隔K之設定、及噴霧嘴5與基板材A間之上下間隔M之設定以外,就支援該等方面而言,亦可與該等組合而考慮噴霧嘴5間之左右間距間隔N。 In other words, in addition to the setting of the left-right offset interval K between the front and rear sides and the setting of the upper and lower intervals M between the spray nozzle 5 and the base material A, the spray nozzle 5 may be supported by The right and left spacing intervals N between the spray nozzles 5 are considered in combination.
而且,如圖1、圖2之(2)圖、圖3之(2)圖、圖4之(2)圖、圖5之(1)圖等所示,噴霧嘴5間之左右間距間隔N原則上設定為30mm以上~120mm以下。尤其是於將上述上下間隔M設定為50mm以上~100mm以下之情形,設定為30mm以上~120mm以下。而且,尤其是若設定為30mm以上~60mm以下,則可獲得實驗上最佳之結果。 Further, as shown in Fig. 1, Fig. 2 (2), Fig. 3 (2), Fig. 4 (2), Fig. 5 (1), etc., the distance between the spray nozzles 5 is N. In principle, it is set to be 30 mm or more and 120 mm or less. In particular, when the vertical spacing M is set to 50 mm or more to 100 mm or less, it is set to be 30 mm or more and 120 mm or less. Further, in particular, if it is set to 30 mm or more to 60 mm or less, an experimentally optimal result can be obtained.
即,例如由於圖案蝕刻時之蝕刻因數提高等原因,利用噴霧嘴5噴射處理液G之強化衝擊之需求較強。因此,作為噴霧嘴5,選擇、使用噴角狹小者之傾向顯著。即,作為噴霧嘴5,較多地選擇使用朝向左右之寬度方向H噴角為40°以上~90°以下者。 That is, for example, due to an increase in the etching factor at the time of pattern etching or the like, the demand for the enhanced impact of the sprayed treatment liquid G by the spray nozzle 5 is strong. Therefore, as the spray nozzle 5, the tendency to select and use a narrow spray angle is remarkable. In other words, as the spray nozzle 5, it is preferable to use a spray angle of 40° or more to 90° or less in the width direction of the left and right.
由此,由於對基板材A噴射處理液G之噴射範圍變窄,故而噴霧嘴5間之左右間距間隔N亦如上述般設定為相對較窄。於左右間距間隔N未滿30mm之情形時,噴霧嘴5間於左右過於接近,難以發揮上述左右偏移間隔K之偏移功能。 Thereby, since the injection range of the spray processing liquid G to the base material sheet A is narrowed, the left-right pitch interval N between the spray nozzles 5 is set to be relatively narrow as described above. When the left-right pitch interval N is less than 30 mm, the spray nozzles 5 are too close to each other on the right and left, and it is difficult to exhibit the shift function of the left-right offset interval K.
相對於此,於左右間距間隔N超過120mm之情形,噴霧嘴5間於左右過於遠離,於此情形下亦難以發揮左右偏移間隔K之偏移功能。因此,導致基板材A產生噴霧圧、噴射衝擊之強弱部位。 On the other hand, when the left-right pitch interval N exceeds 120 mm, the spray nozzles 5 are too far apart from each other on the left and right sides, and in this case, it is also difficult to exhibit the function of shifting the left and right offset intervals K. Therefore, the base sheet A is caused to generate a spray squeezing portion and a strong portion of the jet impact.
順帶提一下,於圖3等所示之例之表面處理裝置1之設計時,若首先確定上述左右偏移間隔K之值,繼而,將左右間距間隔N之值確定為其整數倍之值,則結果獲得必需之噴射管9之根數為整數值。 Incidentally, in the design of the surface treatment apparatus 1 of the example shown in FIG. 3 and the like, if the value of the left and right offset interval K is first determined, then the value of the left and right pitch interval N is determined as an integral multiple of the value. As a result, the number of necessary injection tubes 9 is obtained as an integer value.
關於噴霧嘴5間之左右間距間隔N,如上所述。 The left-right spacing interval N between the spray nozzles 5 is as described above.
於該表面處理裝置1,作為上述各種設定之噴霧嘴5,代表性地使用如圖4之(2)圖、圖5之(1)圖所示般噴霧圖案為橢圓形之扁平型(扇型)者。 In the surface treatment apparatus 1, as the spray nozzles 5 of the various settings described above, a flat type in which the spray pattern is elliptical as shown in Fig. 4 (2) and Fig. 5 (1) is typically used (fan type) )By.
而且,噴霧嘴5係於水平面,朝向左右之寬度方向H而設置。即,以包含準確地朝向左右之寬度方向H之0°之噴嘴角度、或0°左右之噴嘴角度θ在內,朝向前後之搬送方向F傾斜10°以下之噴嘴角度θ來設置。 Further, the spray nozzle 5 is attached to the horizontal plane in the width direction H on the horizontal plane. In other words, it is provided so as to include a nozzle angle of 0° which is accurately oriented in the width direction H of the right and left, or a nozzle angle θ of about 0°, and a nozzle angle θ which is inclined by 10° or less toward the front and rear transport directions F.
對該等進行詳細敍述。首先,於作為電路形成步驟之顯影步驟或蝕刻步驟中,於噴嘴角度θ為0°或0°前後以外之情形,與左右之寬度方向H平行地形成之(Y方向)電路寬度之粗細、與和前後之搬送方向F平行地形成之(X方向)電路寬度之粗細產生差,故而欠佳。 This will be described in detail. First, in the developing step or the etching step as the circuit forming step, the width of the (Y-direction) circuit width formed in parallel with the left-right width direction H in the case where the nozzle angle θ is 0° or 0° or less, and The thickness of the (X-direction) circuit width formed in parallel with the front and rear transfer directions F is poor, and thus is not preferable.
因此,顯影步驟或蝕刻步驟中,噴嘴角度θ代表性為設定為0°,進而為0°前後,即±1°或2°之幅度。 Therefore, in the developing step or the etching step, the nozzle angle θ is typically set to be 0°, and further to the range of ±1° or 2° before and after 0°.
即,噴嘴角度θ代表性為0°,但亦可為朝向前後之搬送方向F傾斜0°~0°+1°以下或0°~0°-1°之噴嘴角度θ。進而,亦可為傾斜0°~+2°以下之噴嘴角度θ,或亦可為傾斜0°~-2°之噴嘴角度θ。 That is, the nozzle angle θ is representatively 0°, but may be a nozzle angle θ inclined by 0° to 0°+1° or less or 0° to 0°-1° toward the front and rear conveying directions F. Further, the nozzle angle θ may be inclined from 0° to +2° or may be a nozzle angle θ inclined from 0° to -2°.
相對於此,於不直接參與電路形成之半蝕刻步驟、軟蝕刻步驟、快速蝕刻步驟、剝離步驟等中,明確地設置噴嘴角度θ會使處理速度變快,而有效。因此,該等各步驟中,噴嘴角度θ被設定為4°以上~10°以下。 On the other hand, in the half etching step, the soft etching step, the rapid etching step, the peeling step, and the like which are not directly involved in the circuit formation, it is effective to clearly set the nozzle angle θ to make the processing speed faster. Therefore, in each of these steps, the nozzle angle θ is set to be 4° or more and 10° or less.
然而,此時之噴嘴角度θ未滿4°之情形下,於噴霧嘴5間,所要噴射之處理液G相互干涉,故而欠佳。又,於噴嘴角度θ超過10°之 情形,前後配置之輸送機3之輪4亦被噴射處理液G,故而欠佳。順帶提一下,於圖示例中,供噴霧嘴5設置之區域中,輸送機3之輪4之配設於搬送方向F少例如僅20mm。 However, in the case where the nozzle angle θ at this time is less than 4°, the treatment liquids G to be sprayed between the spray nozzles 5 interfere with each other, which is not preferable. Also, at a nozzle angle θ exceeding 10° In this case, the wheel 4 of the conveyor 3 disposed before and after is also sprayed with the treatment liquid G, which is not preferable. Incidentally, in the example of the figure, in the region where the spray nozzle 5 is provided, the wheel 4 of the conveyor 3 is disposed in the transport direction F as small as, for example, only 20 mm.
又,噴霧嘴5作為噴嘴性能,使用噴角為40°以上~90°以下,且噴量於0.3MPa下為2L/min~5L/min左右者。再者,圖4之(2)圖、圖5之(1)圖中,10為輪4之輸送機軸10。 Further, as the nozzle performance, the spray nozzle 5 has an injection angle of 40° or more and 90° or less, and a spray amount of about 2 L/min to 5 L/min at 0.3 MPa. Further, in Fig. 4 (2) and Fig. 5 (1), 10 is the conveyor shaft 10 of the wheel 4.
關於噴霧嘴5之噴嘴角度θ等,如上所述。 The nozzle angle θ and the like of the spray nozzle 5 are as described above.
本發明之基板材A之表面處理裝置1係如以上說明般構成。因此,成為如下所述。 The surface treatment apparatus 1 of the base material sheet A of the present invention is configured as described above. Therefore, it becomes as follows.
(1)該表面處理裝置1被使用於電子電路基板E之製造步驟中。即,於以成為製造步驟之核心之蝕刻步驟為首之顯影步驟、剝離步驟、進而半蝕刻步驟、軟蝕刻步驟、快速蝕刻步驟等中,被作為各種蝕刻裝置、顯影裝置、剝離裝置而使用。 (1) The surface treatment apparatus 1 is used in the manufacturing steps of the electronic circuit board E. That is, it is used as various etching apparatuses, developing apparatuses, and peeling apparatuses in the developing step, the peeling step, the half-etching step, the soft etching step, the rapid etching step, and the like, which are the etching steps which are the core of the manufacturing steps.
(2)而且,表面處理裝置1係對以輸送機3所搬送之基板材A,自於前後左右配設有多個之噴霧嘴5噴射處理液G,由此對基板材A進行表面處理(參照圖2、圖3等)。即,自噴霧嘴5噴射蝕刻液、顯影液、剝離液等處理液G,由此對基板材A進行蝕刻、顯影、剝離等表面處理。 (2) In the surface treatment apparatus 1, the base material A conveyed by the conveyor 3 is provided with a plurality of spray nozzles 5 sprayed with the treatment liquid G from the front, rear, left and right sides, thereby surface-treating the base material A ( Refer to Figure 2, Figure 3, etc.). In other words, the treatment liquid G such as the etching liquid, the developing solution, and the peeling liquid is sprayed from the spray nozzle 5, whereby the base material sheet A is subjected to surface treatment such as etching, development, and peeling.
(3)而且,本發明之表面處理裝置1之特徵在於:關於噴霧嘴5,如以下般將其配設位置設定等構成進行各種組合而採用。 (3) Further, the surface treatment apparatus 1 of the present invention is characterized in that the spray nozzle 5 is configured in various combinations as follows.
(4)即,噴霧嘴5首先,前後配置之相互間並非於前後成行而是設定為於左右依序偏移之位置關係(參照圖1、圖2之(2)圖、圖 3之(2)圖、圖4之(2)圖等)。 (4) In other words, the spray nozzles 5 are first disposed in front and rear, and are arranged in a positional relationship that is shifted in the right and left directions (see FIG. 1 and FIG. 2 (2). 3 (2), Figure 4 (2), etc.).
即,噴霧嘴5之左右偏移間隔K被設定為5mm以上~25mm以下。由此,噴霧嘴5於前後之搬送方向F疊加而不對向配置,而於左右之寬度方向H稍微偏移地配設設置。 In other words, the left-right offset interval K of the spray nozzle 5 is set to be 5 mm or more and 25 mm or less. Thereby, the spray nozzle 5 is superimposed on the front and rear conveyance directions F without being opposed to each other, and is disposed to be slightly offset in the width direction H of the left and right.
(5)此外,噴霧嘴5與基板材A間之上下間隔M被設定為30mm以上~150mm以下,較理想為50mm以上~100mm(參照圖2之(1)圖、圖3之(1)圖、圖4之(1)圖等)。 (5) Further, the upper and lower intervals M between the spray nozzle 5 and the base material A are set to 30 mm or more to 150 mm or less, preferably 50 mm or more to 100 mm (refer to Fig. 2 (1) and Fig. 3 (1). Figure (1), etc.).
(6)而且,進而,噴霧嘴5相互間之左右間距間隔N被設定為30mm~120mm(參照圖1、圖2之(2)圖、圖3之(2)圖、圖4之(2)圖、圖5之(1)圖等)。 (6) Further, the distance N between the spray nozzles 5 and the right and left is set to 30 mm to 120 mm (see Fig. 1 and Fig. 2 (2), Fig. 3 (2), Fig. 4 (2). Figure, Figure 5 (1), etc.).
(7)再者,噴霧嘴5代表性地使用扁平型者,並且以於前後之搬送方向F以0°或0°左右傾斜之噴嘴角度θ朝向左右之寬度方向H、或以傾斜4°以上~10°以下之噴嘴角度θ朝向左右之寬度方向H(參照圖4之(2)圖、圖5之(1)圖)。 (7) In addition, the spray nozzle 5 is typically a flat type, and the nozzle angle θ inclined at 0° or 0° in the front and rear transport directions F is oriented in the width direction H of the left and right or inclined by 4° or more. The nozzle angle θ of ~10° or less is oriented in the width direction H of the left and right (see FIG. 4 (2) and FIG. 5 (1)).
(8)本發明之基板材A之表面處理裝置係如上述般將噴霧嘴5之配設位置設定等構成進行各種組合而採用。由此,基板材A之處理精度提高,基板材A被均勻處理。 (8) The surface treatment apparatus of the base material sheet A of the present invention is used in various combinations as described above in order to set the arrangement position of the spray nozzles 5, and the like. Thereby, the processing precision of the base material A is improved, and the base material A is uniformly processed.
(9)即,避免要被處理之基板材A產生被較強之噴霧壓、噴射衝擊之處理液G處理之部位、及處理液G之噴霧壓、噴射衝擊較弱而成為處理不足之部位。 (9) That is, the portion of the base material A to be treated which is treated by the treatment liquid G which is subjected to the strong spray pressure and the jet impact, and the spray pressure and the jet impact of the treatment liquid G are weak, and the treatment is insufficient.
當然,於此過程中,所噴射之處理液G於基板材A上產生儲液或產生滯留之情況被減輕。 Of course, in the process, the case where the sprayed treatment liquid G generates a liquid storage or a build-up on the base material A is alleviated.
因此,基板材A被整體性、平均性、均勻性地表面處理。避免產生因處理過度而導致所形成之電路寬度(底部寬度)L變窄變細而過小 之部位,並且避免產生因處理不足而導致所形成之電路寬度L過大之部位。由此,消除電路寬度L之偏差(亦參照圖6之(2)圖、(3)圖)。 Therefore, the base material sheet A is surface-treated in a uniform, uniform, and uniform manner. Avoid creating a circuit width (bottom width) L that is formed due to over-treatment, becoming narrower and smaller. The portion of the circuit is prevented from being excessively large due to insufficient processing. Thereby, the deviation of the circuit width L is eliminated (see also FIG. 6 (2) and (3)).
尤其是於蝕刻步驟中,蝕刻深度、電路深度C之均勻性提高。即,均勻性(Uniformity)(最小蝕刻量/最大蝕刻量×100%)提高,實現無凹凸之均勻蝕刻。 Especially in the etching step, the uniformity of the etching depth and the circuit depth C is improved. That is, uniformity (minimum etching amount / maximum etching amount × 100%) is improved, and uniform etching without unevenness is realized.
(10)並且,上述情況可藉由簡易之構成而容易實現。即,於基板材A之表面處理裝置1,如上述般藉由組合噴霧嘴5之配設位置設定等而實現上述情況。 (10) Further, the above case can be easily realized by a simple configuration. That is, the surface treatment apparatus 1 of the base material sheet A achieves the above-described situation by setting the arrangement position of the spray nozzles 5 as described above.
即,該表面處理裝置1係藉由對噴霧嘴5之既定之左右偏移間隔K、上下間隔M、左右間距間隔N等設定數值並進行組合之簡易之構成,而容易實現於成本方面優異,並且處理精度提高、防止電路寬度偏差。 In other words, the surface treatment apparatus 1 is easy to realize in terms of cost by setting a numerical value of a predetermined left-right offset interval K, a vertical interval M, and a left-right spacing interval N of the spray nozzle 5, and combining them. Moreover, the processing accuracy is improved and the circuit width deviation is prevented.
(11)又,若使用該表面處理裝置1,則伴隨著均勻性之改善、電路寬度L之偏差消除,而可利用於成本方面優異之蓋孔法製造所形成之電路B之電路寬度L較窄之微細電路(之蝕刻)。 (11) Further, when the surface treatment apparatus 1 is used, the circuit width L of the circuit B formed by the cover hole method which is excellent in cost can be improved as the uniformity is improved and the variation of the circuit width L is eliminated. Narrow microcircuit (etching).
亦可利用蓋孔法製造銅箔厚度為18μm以下之基板材A且電路寬度L或電路間空間S為40μm以下之基板材A。進而,銅箔厚度為12μm左右之基板材A且電路寬度L或電路間空間S為20~30μm左右之基板材A,亦達到能夠利用蓋孔法進行製造之目標值(亦參照圖6之(2)圖、(3)圖)。 It is also possible to manufacture the base material A having a base material A having a copper foil thickness of 18 μm or less and a circuit width L or an inter-circuit space S of 40 μm or less by the cover hole method. Further, the base material A having a copper foil having a thickness of about 12 μm and a circuit width L or an inter-circuit space S of about 20 to 30 μm is also a target value which can be manufactured by the cover hole method (see also FIG. 6 (also 2) Figure, (3) Figure).
(12)進而,根據該表面處理裝置1,而實現均勻性之改善、防止電路寬度L之偏差,當然於其過程中,處理液G之儲液之產生或滯留之產生被抑制。由此,無須採用應對儲液用或應對滯留用之專用機構。即,該表面處理裝置1無須採取如上述該種先前技術般針 對噴射管9之搖頭振盪機構、水平振盪機構、斜向配置機構、或儲液真空機構等。關於本發明之作用等,如上所述。 (12) Further, according to the surface treatment apparatus 1, the uniformity is improved and the variation of the circuit width L is prevented. Of course, during the process, the generation or retention of the liquid storage of the treatment liquid G is suppressed. Therefore, it is not necessary to adopt a dedicated mechanism for handling liquid storage or for stagnation. That is, the surface treatment apparatus 1 does not need to take the needle of the prior art as described above. The oscillating mechanism, the horizontal oscillating mechanism, the oblique arranging mechanism, or the liquid storage vacuum mechanism of the injection pipe 9. The action and the like of the present invention are as described above.
以下,對本發明實施例之實驗資料等進行說明。即,關於均勻性之實驗結果,對本發明之實施例所獲得之實驗資料、及於習知例(比較例)所獲得之實驗資料進行說明。 Hereinafter, experimental materials and the like of the examples of the present invention will be described. That is, the experimental data obtained in the examples of the present invention and the experimental data obtained in the conventional examples (comparative examples) will be described with respect to the experimental results of the uniformity.
首先,對成為實驗之前提之實驗方法進行敍述。關於作為表面處理裝置1之代表例之蝕刻裝置,作為蝕刻深度(電路深度C)之均一性評價之方法,即均勻性評價之方法,首先,考慮以下(I)、(Ⅱ)。 First, the experimental method mentioned before the experiment is described. As an etching apparatus which is a representative example of the surface treatment apparatus 1, as a method of uniformity evaluation of the etching depth (circuit depth C), that is, a method of uniformity evaluation, first, the following (I) and (II) are considered.
(I)實際上使用抗蝕劑,實施顯影、蝕刻、剝離之各步驟而形成電路B,對其結果獲得之電路B驗證電路寬度L之偏差情況之方法。 (I) A method in which the circuit B is actually formed by performing each step of development, etching, and stripping using a resist, and the circuit B obtained as a result verifies the deviation of the circuit width L.
(Ⅱ)僅實施蝕刻。即,蝕刻銅箔,對其結果獲得之殘銅之銅厚(相當於電路深度C)進行驗證之方法。 (II) Only etching is performed. That is, the copper foil is etched, and the copper thickness (corresponding to the circuit depth C) of the residual copper obtained as a result is verified.
若比較(I)、(Ⅱ)之方法,則如下所述。(I)之方法中,因蝕刻裝置本身之性能、生產技術之要素、使用抗蝕劑之種類、蝕刻液之種類等而對均勻性評價產生影響。 If the methods of (I) and (II) are compared, they are as follows. In the method (I), the uniformity evaluation is affected by the performance of the etching apparatus itself, the factors of the production technique, the type of the resist used, the type of the etching liquid, and the like.
相對於此,(Ⅱ)之方法中,關於蝕刻裝置,可僅關於對銅箔之蝕刻性能本身進行均勻性評價。因此,藉由(Ⅱ)之方法進行實驗。 On the other hand, in the method of (II), regarding the etching apparatus, it is possible to evaluate the uniformity of the etching performance of the copper foil alone. Therefore, the experiment was carried out by the method of (II).
本發明實施例之測試條件係如以下表1所示。再者,表1中,液溫、比重等係關於作為蝕刻液使用之氯化銅CuCl2。表1中,所謂有效 長度係表面處理裝置1之處理室2之搬送方向F之長度尺寸。 The test conditions of the examples of the present invention are shown in Table 1 below. Further, in Table 1, the liquid temperature, specific gravity, based on the use as an etching solution of copper chloride CuCl 2. In Table 1, the effective length is the length dimension of the conveyance direction F of the processing chamber 2 of the surface treatment apparatus 1.
本發明實施例之測試結果係如下述表2~表5所示。 The test results of the examples of the present invention are shown in Tables 2 to 5 below.
表2、表4中,A~I及1~7係如圖5之(2)圖所示,表示基板材A之各測定點之縱橫軸,並將兩者之各交點作為測定點。 In Tables 2 and 4, A to I and 1 to 7 are the vertical and horizontal axes of the measurement points of the base material A as shown in Fig. 5 (2), and the intersections of the two are used as measurement points.
而且,於基板材A之各測定點,於實驗開始時如處於上述表1之測試條件中般,對銅厚67.3μm之銅箔測定其殘銅之銅厚(相當於電路深度C)。其結果,對於基板材A之上表面(表面)獲得表2之測定結果,對於下表面(背面)獲得表4之測定結果。 Further, at each measurement point of the base material A, the copper foil having a copper thickness of 67.3 μm was measured for the copper thickness of the residual copper (corresponding to the circuit depth C) at the beginning of the experiment as in the test conditions of the above Table 1. As a result, the measurement results of Table 2 were obtained for the upper surface (surface) of the base material A, and the measurement results of Table 4 were obtained for the lower surface (back surface).
由此,基於此算出均勻性(表2中或表4中之殘銅之最小銅厚/最大銅厚×100%)。於是,上表面(表面)如表3所示般成為94.12%。下表面(背面)如表5所示般成為94.21%(再者,將100設為最高評價)。 Thus, the uniformity (the minimum copper thickness/maximum copper thickness x 100% of the residual copper in Table 2 or Table 4) was calculated based on this. Thus, the upper surface (surface) was 94.12% as shown in Table 3. The lower surface (back surface) was 94.21% as shown in Table 5 (again, 100 was set as the highest evaluation).
如此,根據本發明之實施例,可獲得極高之均勻性。 Thus, according to an embodiment of the present invention, extremely high uniformity can be obtained.
習知例(比較例)之測試條件係如以下表6所示。表6係關於基板材 A之上表面(表面)與下表面(背面)之測試條件。並且,設為與上述本發明實施例之測試條件近似之條件。 The test conditions of the conventional example (comparative example) are shown in Table 6 below. Table 6 is about the base plate Test conditions for the surface (surface) and the lower surface (back) of A. Further, conditions which are similar to the test conditions of the above-described embodiment of the present invention are set.
再者,表6中,液溫、比重等係關於作為蝕刻液使用之氯化銅CuCl2。表6中,所謂有效長度係使用之表面處理裝置之處理室之搬送方向之長度尺寸。 In Table 6, the liquid temperature, specific gravity, based on the use of a copper chloride CuCl 2 etch solution. In Table 6, the effective length is the length dimension of the conveying direction of the processing chamber of the surface treatment apparatus used.
再者,作為習知例(比較例),使用本說明書中之上述背景技術欄所記載之表面處理裝置。 Further, as a conventional example (comparative example), the surface treatment apparatus described in the above background art column in the present specification is used.
習知例(比較例)之測試結果係如下述表7~表10所示。表7、表9中,S1~S6及1~9係表示基板材A之各測定點之縱橫軸,將兩者之各交點作為測定點。 The test results of the conventional examples (comparative examples) are shown in Tables 7 to 10 below. In Tables 7 and 9, S1 to S6 and 1 to 9 indicate the vertical and horizontal axes of the respective measurement points of the base material A, and the intersections of the two are used as measurement points.
而且,於基板材A之各測定點,於實驗開始時如處於上述表6之測試條件中般,對銅厚64.0μm之銅箔測定其殘銅之銅厚(相當於電路深度C)。其結果,對於基板材A之上表面(表面)獲得表7之測定結果,對下表面(背面)獲得表9之測定結果。 Further, at each measurement point of the base material A, the copper thickness of the residual copper was measured for a copper foil having a copper thickness of 64.0 μm (corresponding to the circuit depth C) at the start of the experiment as in the test conditions of the above Table 6. As a result, the measurement results of Table 7 were obtained for the upper surface (surface) of the base material A, and the measurement results of Table 9 were obtained for the lower surface (back surface).
由此,基於此算出均勻性(表7中或表9中之殘銅之最小銅厚/最大銅厚×100%)。於是,上表面(表面)如表8所示成為76.99%,下表面(背面)成為77.63%。 Thus, the uniformity (the minimum copper thickness/maximum copper thickness x 100% of the residual copper in Table 7 or Table 9) was calculated based on this. Thus, the upper surface (surface) was 76.99% as shown in Table 8, and the lower surface (back surface) was 77.63%.
如此,根據習知例(比較例),與上述本發明實施例相比,均勻性較 差。本發明實施例中,如上述般獲得上表面(表面)94.12%、下表面(背面)94.21%之較高之均勻性,幾乎消除了電路B之偏差。 Thus, according to the conventional example (comparative example), the uniformity is compared with the above-described embodiment of the present invention. difference. In the embodiment of the present invention, a higher uniformity of the upper surface (surface) 94.12% and the lower surface (back surface) 94.21% is obtained as described above, and the deviation of the circuit B is almost eliminated.
如此,自實驗資料方面亦證實了本發明之均勻性之優異性。 Thus, the superiority of the uniformity of the present invention was also confirmed from the experimental data.
關於本發明之實施例之實驗資料等,如上所述。 Experimental materials and the like regarding the examples of the present invention are as described above.
1‧‧‧表面處理裝置 1‧‧‧ surface treatment equipment
2‧‧‧處理室 2‧‧‧Processing room
5‧‧‧噴霧嘴 5‧‧‧ spray nozzle
A‧‧‧基板材 A‧‧‧ base plate
F‧‧‧搬送方向 F‧‧‧Transfer direction
H‧‧‧寬度方向 H‧‧‧Width direction
K‧‧‧左右偏移間隔 Offset interval around K‧‧
N‧‧‧左右間距間隔 N‧‧‧ spacing interval
Claims (8)
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| JP2013191301 | 2013-09-17 | ||
| JP2014160228A JP2015084407A (en) | 2013-09-17 | 2014-08-06 | Surface treatment device of substrate material |
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| TW201607392A true TW201607392A (en) | 2016-02-16 |
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| KR (1) | KR20160017589A (en) |
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| JP7007060B2 (en) * | 2018-05-21 | 2022-01-24 | 東京化工機株式会社 | Substrate etching equipment |
| CN115643680A (en) * | 2021-07-19 | 2023-01-24 | 上海美维科技有限公司 | Evaluation and Improvement Method of Etching Ability and Etching Uniformity of IC Packaging Substrate |
| JP2023127493A (en) * | 2022-03-01 | 2023-09-13 | 日本発條株式会社 | Etching equipment |
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| JP3120073B2 (en) * | 1999-02-22 | 2000-12-25 | 東京化工機株式会社 | Chemical treatment equipment |
| JP3518676B2 (en) * | 2000-05-11 | 2004-04-12 | 東京化工機株式会社 | Surface treatment equipment for printed wiring board materials |
| JP3479636B2 (en) | 2000-08-28 | 2003-12-15 | 東京化工機株式会社 | Printed wiring board material transfer mechanism |
| JP2006222117A (en) | 2005-02-08 | 2006-08-24 | Tokyo Kakoki Kk | Substrate material transfer device |
| JP2011023378A (en) * | 2009-07-13 | 2011-02-03 | Tokyo Kakoki Kk | Surface treatment device of substrate material |
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