CN103201801B - Manufacturing method of metal plate low resistance chip resistor - Google Patents
Manufacturing method of metal plate low resistance chip resistor Download PDFInfo
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- CN103201801B CN103201801B CN201180045471.9A CN201180045471A CN103201801B CN 103201801 B CN103201801 B CN 103201801B CN 201180045471 A CN201180045471 A CN 201180045471A CN 103201801 B CN103201801 B CN 103201801B
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Abstract
Description
技术领域technical field
本发明涉及使用电阻金属板的芯片电阻器的制造方法。The present invention relates to a method of manufacturing a chip resistor using a resistive metal plate.
背景技术Background technique
在电源装置和电机的转速控制电路等各种控制电路中,需要检测电流的手段。存在多种检测电流的手段,通常大多使用分流电阻器等电子元件。作为适用于这种分流电阻器等的电阻器,公知的有芯片电阻器。此外,所述芯片电阻器中,在电阻值为数mΩ这样的电阻值非常低的芯片电阻器的制造中,主要采用电阻金属板。使用所述的电阻金属板制造的低电阻的芯片电阻器,一般被称作金属板低电阻芯片电阻器。In various control circuits such as power supply units and rotational speed control circuits of motors, means for detecting current is required. There are many ways to sense the current, but most of them use electronic components such as shunt resistors. A chip resistor is known as a resistor suitable for such a shunt resistor or the like. In addition, among the above-mentioned chip resistors, a resistive metal plate is mainly used in the manufacture of a chip resistor having a very low resistance value of several mΩ. A low-resistance chip resistor manufactured using the above-mentioned resistance metal plate is generally called a metal plate low-resistance chip resistor.
如图16的(a)~图16的(c)所示,金属板低电阻芯片电阻器1的外观为长方体状,使用电阻金属板2制造而成。电阻金属板2的表面2a和背面2b上分别形成有保护膜3a、3b。所述保护膜3a、3b为电绝缘性的膜。此外,未形成有保护膜3a、3b的电阻金属板2的长度方向(图16的(b)和图16的(c)的左右方向)的两端部2e、2f的表面(即表面2a的宽度方向的两端部2a-1、2a-2、背面2b的宽度方向的两端部2b-1、2b-2、和两端面2c、2d)上,形成有电极镀膜4a、4b。As shown in FIGS. 16( a ) to 16 ( c ), the metal plate low-resistance chip resistor 1 has a cuboid appearance and is manufactured using a resistance metal plate 2 . Protective films 3a, 3b are formed on the front surface 2a and the back surface 2b of the resistance metal plate 2, respectively. The protective films 3a and 3b are electrically insulating films. In addition, the surfaces of both ends 2e and 2f in the longitudinal direction of the resistance metal plate 2 (the left-right direction of FIG. 16(b) and FIG. 16(c)) on which the protective films 3a and 3b are not formed (that is, the surfaces of the surface 2a Electrode plating films 4a, 4b are formed on the widthwise ends 2a-1, 2a-2, the widthwise end portions 2b-1, 2b-2, and the end faces 2c, 2d) of the rear surface 2b.
关于芯片电阻器1的各尺寸(单位:mm),例如规定芯片电阻器1的全长L1为1.6±0.1(允差),电极镀膜4a、4b的长度C为0.2±0.1(允差),芯片电阻器1的宽度W为0.8±0.1(允差),芯片电阻器1的厚度H为0.3±0.1(允差)。所述的包含允差的芯片电阻器1的各尺寸是根据在电路基板上安装芯片电阻器1时的尺寸上的制约等而设定的。另外,保护膜3a、3b的长度L2是芯片电阻器1的全长L1与两侧的电极镀膜4a、4b的长度(全长)2×C的差(L1-2×C)。换言之,L2是电阻金属板2的被保护膜3a、3b覆盖的部分的长度。此外,电阻金属板2的厚度为厚度T,电阻金属板2的长度为长度L3。Regarding the dimensions (unit: mm) of the chip resistor 1, for example, the total length L1 of the chip resistor 1 is specified as 1.6±0.1 (tolerance), and the length C of the electrode plating films 4a and 4b is 0.2±0.1 (tolerance), The width W of the chip resistor 1 is 0.8±0.1 (tolerance), and the thickness H of the chip resistor 1 is 0.3±0.1 (tolerance). Each dimension of the above-mentioned chip resistor 1 including tolerances is set in accordance with dimensional constraints and the like when the chip resistor 1 is mounted on a circuit board. The length L2 of the protective films 3a and 3b is the difference (L1-2×C) between the total length L1 of the chip resistor 1 and the length (full length) 2×C of the electrode plating films 4a and 4b on both sides. In other words, L2 is the length of the portion of the resistance metal plate 2 covered with the protective films 3a, 3b. In addition, the thickness of the resistance metal plate 2 is thickness T, and the length of the resistance metal plate 2 is length L3.
以往,通过依次实施图17的工序流程图所示的带状电阻金属板切断工序(步骤S1)、狭缝形成工序(步骤S2)、保护膜形成工序(步骤S3)、电极镀膜形成工序(步骤S4)、长条状部切取工序(步骤S5)和长条状部切断工序(步骤S6),来制造图16所示结构的金属板低电阻芯片电阻器1。Conventionally, by sequentially implementing the band-shaped resistance metal plate cutting process (step S1), the slit forming process (step S2), the protective film forming process (step S3), and the electrode plating film forming process (step S3) shown in the process flow chart of FIG. S4), the strip-shaped portion cutting process (step S5) and the strip-shaped portion cutting process (step S6), to manufacture the metal plate low-resistance chip resistor 1 with the structure shown in FIG. 16 .
对于狭缝形成工序(步骤S2)和保护膜形成工序(步骤S3),参照图18和图19进一步说明。另外,对于带状电阻金属板切断工序(步骤S1)、电极镀膜形成工序(步骤S4)、长条状部切取工序(步骤S5)以及长条状部切断工序(步骤S6),与图1所示的带状电阻金属板切断工序(步骤S11)、电极镀膜形成工序(步骤S15)、长条状部切取工序(步骤S16)、长条状部切断工序(步骤S17)相同,这些工序的详细内容见后述。The slit forming step (step S2 ) and the protective film forming step (step S3 ) will be further described with reference to FIGS. 18 and 19 . In addition, for the strip-shaped resistance metal plate cutting process (step S1), the electrode plating film forming process (step S4), the strip-shaped portion cutting process (step S5) and the strip-shaped portion cutting process (step S6), the same as that shown in FIG. The strip-shaped resistance metal plate cutting process (step S11), the electrode plating film forming process (step S15), the strip-shaped portion cutting process (step S16), and the strip-shaped portion cutting process (step S17) shown are the same, and the details of these processes See below for the content.
如图18的(a)~图18的(c)所示,在狭缝形成工序(步骤S2)中,在矩形的电阻金属板2B上形成多个(图中示例为5个)狭缝6。在带状电阻金属板切断工序(步骤S1)中,从带状的电阻金属板2A(参照图2)切取电阻金属板2B。狭缝6在电阻金属板2B的长度方向(图18的(b)的上下方向)上延伸、且在电阻金属板2B的宽度方向(图18的(b)的左右方向)上相互平行。另外,以定位标记5为基准设定形成狭缝6的位置。通过形成所述多个狭缝6,电阻金属板2B的形状成为具有多个(图中示例为4个)长条状部7和连接部8的形状,所述长条状部7在电阻金属板2B的长度方向上延伸,所述连接部8分别连接所述多个长条状部7的长度方向(图18的(b)的上下方向)的两端。As shown in Fig. 18(a) to Fig. 18(c), in the slit forming step (step S2), a plurality of (five in the figure in the example) slits 6 are formed on the rectangular resistance metal plate 2B. . In the strip-shaped resistance metal plate cutting step (step S1 ), the resistance metal plate 2B is cut out from the strip-shaped resistance metal plate 2A (see FIG. 2 ). The slits 6 extend in the longitudinal direction of the resistance metal plate 2B (the vertical direction in FIG. 18( b )) and are parallel to each other in the width direction of the resistance metal plate 2B (the horizontal direction in FIG. 18( b )). In addition, the position where the slit 6 is formed is set with reference to the positioning mark 5 . By forming the plurality of slits 6, the shape of the resistance metal plate 2B becomes a shape having a plurality (four in the figure) of elongated portions 7 and connecting portions 8. The plate 2B extends in the longitudinal direction, and the connecting portions 8 connect both ends of the plurality of elongated portions 7 in the longitudinal direction (the vertical direction in FIG. 18( b )).
如图19的(a)~图19的(c)所示,在接着的保护膜形成工序(步骤S3)中,通过丝网印刷法等,针对各长条状部7,在电阻金属板2B的表面2B-1和背面2B-2上分别形成多个(图中示例为4个)保护膜3A、3B。所述保护膜3A、3B在电阻金属板2B的长度方向上延伸、且在电阻金属板2B的宽度方向上相互平行。另外,以定位标记5为基准设定形成保护膜3A、3B的位置。As shown in FIGS. 19( a ) to 19 ( c ), in the subsequent protective film forming step (step S3 ), screen printing or the like is applied to each elongated portion 7 on the resistive metal plate 2B. A plurality of protective films 3A, 3B are formed on the front surface 2B-1 and the back surface 2B-2 of the protective film 2B-2 respectively. The protective films 3A and 3B extend in the longitudinal direction of the resistance metal plate 2B and are parallel to each other in the width direction of the resistance metal plate 2B. In addition, the positions where the protective films 3A and 3B are formed are set with reference to the positioning marks 5 .
另外,作为公开了芯片电阻器的制造方法的现有技术文献,例如有以下的专利文献1、2。In addition, as prior art documents disclosing a manufacturing method of a chip resistor, there are, for example, the following patent documents 1 and 2.
现有技术文献prior art literature
专利文献patent documents
专利文献1:日本专利公开公报特开2009-218552号Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-218552
专利文献2:国际公开第2008/018219号册子Patent Document 2: International Publication No. 2008/018219 Booklet
发明内容Contents of the invention
本发明要解决的技术问题The technical problem to be solved in the present invention
所述以往的金属板低电阻芯片电阻器的制造方法,在形成保护膜3A、3B之前形成狭缝6。即,通过在电阻金属板2B上形成狭缝6而形成长条状部7后,在所述长条状部7上形成保护膜3A、3B。因此,所述以往的金属板低电阻芯片电阻器的制造方法存在下述问题。In the conventional manufacturing method of the metal plate low-resistance chip resistor, the slits 6 are formed before the protective films 3A and 3B are formed. That is, after the elongated portion 7 is formed by forming the slit 6 in the resistance metal plate 2B, the protective films 3A, 3B are formed on the elongated portion 7 . Therefore, the above-described conventional method of manufacturing a metal plate low-resistance chip resistor has the following problems.
即,先于保护膜3A、3B形成狭缝6时,必须在长条状部7的宽度非常窄的电阻金属板2B的表面2B-1和背面2B-2上形成保护膜3A、3B。因此,保护膜3A、3B的形成很困难。另外,在进一步要求芯片电阻器1的小型化时,由于长条状部7的电阻金属板2B的宽度更窄,因此形成保护膜3A、3B更加困难。此外,形成保护膜3A、3B时,一般通过丝网印刷法将浆料形成图案,进而,为提高其尺寸精度采用光刻法。此外,当采用所述光刻法时,如果先于保护膜3A、3B首先形成狭缝6,则会使制造方法变得复杂。That is, when the slits 6 are formed prior to the protective films 3A, 3B, the protective films 3A, 3B must be formed on the front 2B-1 and back 2B-2 of the resistance metal plate 2B whose elongated portion 7 is very narrow. Therefore, formation of the protective films 3A, 3B is difficult. In addition, when further miniaturization of the chip resistor 1 is required, since the width of the resistance metal plate 2B of the elongated portion 7 is narrower, it is more difficult to form the protective films 3A and 3B. In addition, when forming the protective films 3A and 3B, the paste is generally patterned by a screen printing method, and further, a photolithography method is used to improve the dimensional accuracy. Furthermore, when the photolithography method is used, if the slit 6 is first formed prior to the protective films 3A, 3B, the manufacturing method will become complicated.
此外,为了将用于制造芯片电阻器1的带状的电阻金属板2A(参照图2)形成所希望的厚度,通过反复进行退火工序和轧制工序来进行制造。可是,制成的带状的电阻金属板2A的厚度不会成为完全均匀,特别是在电阻金属板2A的宽度方向上会产生厚度不均。因此,在从带状的电阻金属板2A切取的电阻金属板2B上,在宽度方向上也会产生厚度不均。Moreover, in order to form the strip-shaped resistance metal plate 2A (refer FIG. 2) used for manufacturing the chip resistor 1 into desired thickness, it manufactures by repeating an annealing process and a rolling process. However, the thickness of the strip-shaped resistance metal plate 2A is not completely uniform, and in particular, thickness unevenness occurs in the width direction of the resistance metal plate 2A. Therefore, in the resistance metal plate 2B cut out from the strip-shaped resistance metal plate 2A, thickness unevenness also occurs in the width direction.
此外,所述电阻金属板2B的宽度方向上的厚度不均,会招致芯片电阻器1的电阻值的不均。另一方面,芯片电阻器1的电阻值,由被电阻金属板2的保护膜3a、3b覆盖部分的宽度W、长度L2、厚度T(参照图16)决定。即,由后述的公式(1)、公式(3)决定。因此,在芯片电阻器1的制造过程中,根据电阻金属板2B的宽度方向的厚度不均,需要通过调整图19所示的各保护膜3A、3B的宽度L21、L22、L23、L24,来降低芯片电阻器1的电阻值的不均。此外,此时,与保护膜3A、3B的宽度L21、L22、L23、L24(即芯片电阻器1的保护膜3a、3b的长度L2)相关的调整的允许范围,优选的是尽可能大。In addition, the uneven thickness in the width direction of the resistance metal plate 2B causes unevenness in the resistance value of the chip resistor 1 . On the other hand, the resistance value of the chip resistor 1 is determined by the width W, length L2, and thickness T (see FIG. 16 ) of the portion covered by the protective films 3 a and 3 b of the resistive metal plate 2 . That is, it is determined by formula (1) and formula (3) mentioned later. Therefore, in the manufacturing process of the chip resistor 1, according to the thickness unevenness in the width direction of the resistance metal plate 2B, it is necessary to adjust the widths L2 1 , L2 2 , L2 3 , L2 4 , to reduce the unevenness of the resistance value of the chip resistor 1 . In addition, at this time, the allowable range of adjustment related to the width L2 1 , L2 2 , L2 3 , L2 4 of the protective film 3A, 3B (that is, the length L2 of the protective film 3a, 3b of the chip resistor 1 ) is preferably as large as possible.
对此如图20所示,在前述芯片电阻器1的尺寸例子的情况下,以往的制造方法的保护膜3a、3b的长度L2的调整允许范围为0.4mm。即,因为先于保护膜3A、3B形成狭缝6,所以在芯片电阻器1中先于保护膜3a、3b的长度L2决定电阻金属板2的长度L3,并决定芯片电阻器1的全长L1。例如设芯片电阻器1的全长L1为1.6mm,在电极镀膜4a、4b的全长2×C最长为0.6mm(=2×(0.2+0.1))的情况和最短为0.2mm(=2×(0.2-0.1))的情况下,保护膜3a、3b的长度L2分别为0.9mm和1.3mm。因此,保护膜3a、3b的长度L2的调整允许范围成为0.4mm(=1.3-0.9)。将芯片电阻器1的全长L1设为1.5mm(=1.6-0.1)和1.7mm(=1.6+0.1)时,调整允许范围也相同。In contrast, as shown in FIG. 20 , in the case of the dimensional example of the chip resistor 1 described above, the allowable range of adjustment of the length L2 of the protective films 3 a and 3 b in the conventional manufacturing method is 0.4 mm. That is, since the slit 6 is formed prior to the protective films 3A and 3B, the length L3 of the resistance metal plate 2 is determined prior to the length L2 of the protective films 3a and 3b in the chip resistor 1, and the overall length of the chip resistor 1 is determined. L1. For example, assuming that the total length L1 of the chip resistor 1 is 1.6mm, the maximum length 2×C of the electrode plating films 4a, 4b is 0.6mm (=2×(0.2+0.1)) and the shortest is 0.2mm (= In the case of 2×(0.2-0.1)), the lengths L2 of the protective films 3 a and 3 b are 0.9 mm and 1.3 mm, respectively. Therefore, the allowable range of adjustment of the length L2 of the protective films 3 a and 3 b is 0.4 mm (=1.3-0.9). When the overall length L1 of the chip resistor 1 is set to 1.5 mm (=1.6-0.1) and 1.7 mm (=1.6+0.1), the allowable adjustment range is also the same.
另外,作为降低因电阻金属板的宽度方向的厚度不均所导致的芯片电阻器的电阻值的不均的方法,有通过修整电阻金属板来调整电阻值的方法。可是,修整电阻金属板后,当将使用了所述被修整的电阻金属板的芯片电阻器与负载连接并使电流流过所述芯片电阻器时,由于所述芯片电阻器上产生热点,所以存在会发生芯片电阻器的寿命特性等负载特性劣化等问题。因此,为了降低因电阻金属板2B的宽度方向的厚度不均所导致的芯片电阻器1的电阻值的不均,不是采用修整电阻金属板2B的方法,而需要通过调整保护膜3A、3B的宽度L21、L22、L23、L24的方法来实施。In addition, as a method of reducing the variation in the resistance value of the chip resistor due to the variation in the thickness of the resistance metal plate in the width direction, there is a method of adjusting the resistance value by trimming the resistance metal plate. However, after the resistance metal plate is trimmed, when a chip resistor using the trimmed resistance metal plate is connected to a load and current flows through the chip resistor, hot spots are generated on the chip resistor, so There is a problem that load characteristics such as life characteristics of chip resistors deteriorate. Therefore, in order to reduce the unevenness in the resistance value of the chip resistor 1 caused by the uneven thickness of the resistance metal plate 2B in the width direction, it is necessary to adjust the thickness of the protective films 3A and 3B instead of trimming the resistance metal plate 2B. The method of width L2 1 , L2 2 , L2 3 , L2 4 is implemented.
因此鉴于所述问题,本发明的目的是提供一种金属板低电阻芯片电阻器的制造方法,能不受长条状部的电阻金属板宽度的影响地容易地形成保护膜,此外,能根据电阻金属板的宽度方向的厚度不均来调整保护膜的宽度(芯片电阻器的保护膜的长度),进而能扩大保护膜的宽度(芯片电阻器的保护膜的长度)的调整的允许范围。Therefore, in view of the above problems, an object of the present invention is to provide a method for manufacturing a metal plate low-resistance chip resistor, which can easily form a protective film without being affected by the width of the resistance metal plate in the elongated portion. The width of the protective film (the length of the protective film of the chip resistor) can be adjusted according to the uneven thickness of the resistance metal plate in the width direction, and the allowable range of adjustment of the width of the protective film (the length of the protective film of the chip resistor) can be expanded.
解决技术问题的技术方案Technical solutions to technical problems
解决所述问题的第一发明的金属板低电阻芯片电阻器的制造方法,其特征在于,使用矩形或带状的电阻金属板,通过依次实施下述工序来制造所述芯片电阻器:保护膜形成工序,分别针对所述电阻金属板的表面和背面,在所述电阻金属板的宽度方向上形成多个保护膜,所述保护膜在所述电阻金属板的长度方向上延伸;狭缝形成工序,通过在所述电阻金属板上形成狭缝,将所述电阻金属板的形状形成为具有多个长条状部和连接部的形状,所述狭缝在所述宽度方向上邻接的所述保护膜之间和位于所述宽度方向两侧的所述保护膜的外侧沿所述电阻金属板的长度方向延伸,所述多个长条状部具有比所述保护膜更宽的宽度且在所述电阻金属板的长度方向上延伸,所述连接部分别连接所述多个长条状部的长度方向的两端;电极镀膜形成工序,针对未形成有所述保护膜且露出有所述电阻金属板的所述长条状部的宽度方向的两端部的由表面(2a)的宽度方向的两端部(2a-1、2a-2)、背面(2b)的宽度方向的两端部(2b-1、2b-2)和两端面(2c、2d)构成的面,形成电极镀膜;长条状部切取工序,从所述连接部切取所述长条状部;以及长条状部切断工序,将所述长条状部切断成多个单片。The method of manufacturing a metal plate low-resistance chip resistor of the first invention that solves the above-mentioned problems is characterized in that the chip resistor is manufactured by sequentially implementing the following steps using a rectangular or strip-shaped resistance metal plate: protective film Forming a step of forming a plurality of protective films in the width direction of the resistance metal plate respectively for the surface and the back surface of the resistance metal plate, the protection films extending in the length direction of the resistance metal plate; forming a slit In the step of forming a slit on the resistance metal plate, the shape of the resistance metal plate is formed into a shape having a plurality of elongated portions and connecting portions, and all adjacent parts of the slit in the width direction Between the protective films and the outer sides of the protective films on both sides of the width direction extend along the length direction of the resistance metal plate, the plurality of elongated portions have a width wider than that of the protective film and Extending in the lengthwise direction of the resistance metal plate, the connecting portions are respectively connected to both ends of the lengthwise direction of the plurality of elongated portions; the electrode plating film forming process is aimed at not forming the protective film and exposing some The two ends (2a-1, 2a-2) of the width direction of the surface (2a) and the two ends of the width direction of the back (2b) an end portion (2b-1, 2b-2) and a surface composed of both end surfaces (2c, 2d), forming an electrode plating film; a strip-shaped portion cutting step, cutting the strip-shaped portion from the connecting portion; and a strip The shape portion cutting step is to cut the elongated portion into a plurality of individual pieces.
此外,第二发明的金属板低电阻芯片电阻器的制造方法是在第一发明的金属板低电阻芯片电阻器的制造方法中,其特征在于,在所述保护膜形成工序之前实施电阻金属板厚度测量工序,在所述电阻金属板厚度测量工序中测量形成所述多个保护膜的所述电阻金属板的宽度方向的各位置的厚度,在所述保护膜形成工序中,根据在所述电阻金属板厚度测量工序中测量到的所述电阻金属板的宽度方向的各位置的厚度,分别设定所述多个保护膜的宽度。Moreover, the manufacturing method of the metal plate low-resistance chip resistor of the 2nd invention is the manufacturing method of the metal plate low-resistance chip resistor of the 1st invention, It is characterized by performing resistance metal plate before the said protective film forming process. A thickness measuring step of measuring the thickness of each position in the width direction of the resistive metal plate on which the plurality of protective films are formed in the resistive metal plate thickness measuring step. In the protective film forming step, according to the The thickness of each position in the width direction of the resistance metal plate measured in the resistance metal plate thickness measurement step is used to set the widths of the plurality of protective films respectively.
此外,第三发明的金属板低电阻芯片电阻器的制造方法,其特征在于,使用矩形或带状的电阻金属板,通过依次实施下述工序来制造所述芯片电阻器:保护膜形成工序,分别针对所述电阻金属板的表面和背面,在所述电阻金属板的宽度方向上形成多个保护膜,所述保护膜在所述电阻金属板的长度方向上延伸;长条状切断工序,通过在切断位置切断所述电阻金属板,切取具有比所述保护膜更宽的宽度且在所述电阻金属板的长度方向上延伸的多个长条状部,所述切断位置在所述宽度方向上邻接的所述保护膜之间和位于所述宽度方向两侧的所述保护膜的外侧沿所述电阻金属板的长度方向延伸;电极镀膜形成工序,针对未形成有所述保护膜且露出有所述电阻金属板的所述长条状部的宽度方向的两端部的表面,形成电极镀膜;以及单片切断工序,将所述长条状部切断成多个单片。In addition, the method of manufacturing a metal plate low-resistance chip resistor of the third invention is characterized in that the chip resistor is manufactured by sequentially implementing the following steps using a rectangular or strip-shaped resistive metal plate: a protective film forming step, Respectively for the surface and back of the resistance metal plate, a plurality of protective films are formed in the width direction of the resistance metal plate, and the protection films extend in the length direction of the resistance metal plate; the elongated cutting process, A plurality of elongated portions having a width wider than that of the protective film and extending in the longitudinal direction of the resistance metal plate are cut by cutting the resistance metal plate at a cutting position that is within the width of the resistance metal plate. Between the protection films adjacent in the direction and the outer sides of the protection films located on both sides of the width direction extend along the length direction of the resistance metal plate; the electrode plating film forming process is for the protection film not formed and forming an electrode plating film on the surface of both ends in the width direction of the elongated portion of the resistance metal plate exposed; and a single-piece cutting step of cutting the elongated portion into a plurality of individual pieces.
此外,第四发明的金属板低电阻芯片电阻器的制造方法是在第三发明的金属板低电阻芯片电阻器的制造方法中,其特征在于,在所述保护膜形成工序之前实施电阻金属板厚度测量工序,在所述电阻金属板厚度测量工序中测量形成所述多个保护膜的所述电阻金属板的宽度方向的各位置的厚度,在所述保护膜形成工序中,根据在所述电阻金属板厚度测量工序中测量到的所述电阻金属板的宽度方向的各位置的厚度,分别设定所述多个保护膜的宽度。In addition, the manufacturing method of the metal plate low-resistance chip resistor of the fourth invention is the manufacturing method of the metal plate low-resistance chip resistor of the third invention, characterized in that the resistance metal plate is implemented before the protective film forming step. A thickness measuring step of measuring the thickness of each position in the width direction of the resistive metal plate on which the plurality of protective films are formed in the resistive metal plate thickness measuring step. In the protective film forming step, according to the The thickness of each position in the width direction of the resistance metal plate measured in the resistance metal plate thickness measurement step is used to set the widths of the plurality of protective films respectively.
发明效果Invention effect
按照第一发明的金属板低电阻芯片电阻器的制造方法,其特征在于,使用矩形或带状的电阻金属板,通过依次实施下述工序来制造所述芯片电阻器:保护膜形成工序,分别针对所述电阻金属板的表面和背面,在所述电阻金属板的宽度方向上形成多个保护膜,所述保护膜在所述电阻金属板的长度方向上延伸;狭缝形成工序,通过在所述电阻金属板上形成狭缝,将所述电阻金属板的形状形成为具有多个长条状部和连接部的形状,所述狭缝在所述宽度方向上邻接的所述保护膜之间和位于所述宽度方向两侧的所述保护膜的外侧沿所述电阻金属板的长度方向延伸,所述多个长条状部具有比所述保护膜更宽的宽度且在所述电阻金属板的长度方向上延伸,所述连接部分别连接所述多个长条状部的长度方向的两端;电极镀膜形成工序,针对未形成有所述保护膜且露出有所述电阻金属板的所述长条状部的宽度方向的两端部的表面,形成电极镀膜;长条状部切取工序,从所述连接部切取所述长条状部;以及长条状部切断工序,将所述长条状部切断成多个单片,因此先于狭缝(即长条状部)形成保护膜。The method of manufacturing a metal plate low-resistance chip resistor according to the first invention is characterized in that the chip resistor is manufactured by sequentially implementing the following steps using a rectangular or strip-shaped resistance metal plate: a protective film forming step, respectively For the surface and back of the resistance metal plate, a plurality of protective films are formed in the width direction of the resistance metal plate, and the protection films extend in the length direction of the resistance metal plate; A slit is formed on the resistance metal plate, the shape of the resistance metal plate is formed into a shape having a plurality of elongated portions and a connection portion, and the slit is formed between the protective films adjacent in the width direction. Between and the outer sides of the protection film on both sides of the width direction extend along the length direction of the resistance metal plate, and the plurality of elongated parts have a width wider than the protection film and are located on the resistance metal plate. Extending in the length direction of the metal plate, the connecting parts are respectively connected to the two ends of the length direction of the plurality of elongated parts; the electrode plating film forming process is aimed at not forming the protective film and exposing the resistance metal plate The surface of both ends of the width direction of the elongated portion is formed with electrode plating; the elongated portion cutting step is to cut the elongated portion from the connecting portion; and the elongated portion is cut. The elongated portion is cut into a plurality of individual pieces, so the protective film is formed prior to the slit (ie, the elongated portion).
因此,即使在例如要求芯片电阻器进一步小型化、长条状部的电阻金属板的宽度变得更窄时,也可以不受所述长条状部的电阻金属板的宽度影响地容易地形成保护膜。此外,还能扩大保护膜的宽度(芯片电阻器的保护膜的长度)的调整的允许范围(参照图8:详细内容将在后面叙述)。Therefore, even if chip resistors are required to be further miniaturized and the width of the resistance metal plate in the elongated portion becomes narrower, it can be easily formed without being affected by the width of the resistance metal plate in the elongated portion. protective film. In addition, the allowable range of adjustment of the width of the protective film (the length of the protective film of the chip resistor) can be expanded (see FIG. 8 : details will be described later).
按照第二发明的金属板低电阻芯片电阻器的制造方法,在第一发明的金属板低电阻芯片电阻器的制造方法中,其特征在于,在所述保护膜形成工序之前实施电阻金属板厚度测量工序,在所述电阻金属板厚度测量工序中测量形成所述多个保护膜的所述电阻金属板的宽度方向的各位置的厚度,在所述保护膜形成工序中,根据在所述电阻金属板厚度测量工序中测量到的所述电阻金属板的宽度方向的各位置的厚度,分别设定所述多个保护膜的宽度。因此除了具有所述第一发明的效果以外,还能够根据电阻金属板的宽度方向的厚度不均,调整保护膜的宽度(芯片电阻器的保护膜的长度)。因此,可以降低因电阻金属板的宽度方向的厚度不均带来的芯片电阻器的电阻值的不均。According to the manufacturing method of the metal plate low-resistance chip resistor of the second invention, in the manufacturing method of the metal plate low-resistance chip resistor of the first invention, it is characterized in that the resistance metal plate thickness is implemented before the protective film forming step. a measuring step of measuring the thickness of each position in the width direction of the resistive metal plate on which the plurality of protective films are formed in the resistive metal plate thickness measuring step; The thickness of each position in the width direction of the resistance metal plate measured in the metal plate thickness measuring step is used to set the widths of the plurality of protective films respectively. Therefore, in addition to the effects of the first invention, the width of the protective film (the length of the protective film of the chip resistor) can be adjusted according to the thickness variation in the width direction of the resistor metal plate. Therefore, variation in the resistance value of the chip resistor due to thickness variation in the width direction of the resistance metal plate can be reduced.
按照第三发明的金属板低电阻芯片电阻器的制造方法,其特征在于,使用矩形或带状的电阻金属板,通过依次实施下述工序来制造所述芯片电阻器:保护膜形成工序,分别针对所述电阻金属板的表面和背面,在所述电阻金属板的宽度方向上形成多个保护膜,所述保护膜在所述电阻金属板的长度方向上延伸;长条状切断工序,通过在切断位置切断所述电阻金属板,切取具有比所述保护膜更宽的宽度且在所述电阻金属板的长度方向上延伸的多个长条状部,所述切断位置在所述宽度方向上邻接的所述保护膜之间和位于所述宽度方向两侧的所述保护膜的外侧沿所述电阻金属板的长度方向延伸;电极镀膜形成工序,针对未形成有所述保护膜且露出有所述电阻金属板的所述长条状部的宽度方向的两端部的表面,形成电极镀膜;以及单片切断工序,将所述长条状部切断成多个单片,因此先于切取长条状部形成保护膜。The method for manufacturing a metal plate low-resistance chip resistor according to the third invention is characterized in that the chip resistor is manufactured by sequentially implementing the following steps using a rectangular or strip-shaped resistance metal plate: a protective film forming step, respectively For the surface and back of the resistance metal plate, a plurality of protective films are formed in the width direction of the resistance metal plate, and the protection films extend in the length direction of the resistance metal plate; The resistance metal plate is cut at a cutting position, and a plurality of elongated portions having a width wider than the protective film and extending in the longitudinal direction of the resistance metal plate are cut, and the cutting position is in the width direction. between the protective films adjacent on the top and the outer sides of the protective films located on both sides in the width direction extend along the length direction of the resistance metal plate; the electrode plating film forming process is for the protective film not formed and exposed Electrode plating is formed on the surfaces of both ends in the width direction of the elongated portion of the resistance metal plate; Cut long strips to form a protective film.
因此,即使在例如要求芯片电阻器进一步小型化、长条状部的电阻金属板的宽度变得更窄时,也可以不受所述长条状部的电阻金属板的宽度影响地容易地形成保护膜。此外,还能扩大保护膜的宽度(芯片电阻器的保护膜的长度)的调整的允许范围(参照图8:详细内容将在后面叙述)。Therefore, even if chip resistors are required to be further miniaturized and the width of the resistance metal plate in the elongated portion becomes narrower, it can be easily formed without being affected by the width of the resistance metal plate in the elongated portion. protective film. In addition, the allowable range of adjustment of the width of the protective film (the length of the protective film of the chip resistor) can be expanded (see FIG. 8 : details will be described later).
按照第四发明的金属板低电阻芯片电阻器的制造方法,在第三发明的金属板低电阻芯片电阻器的制造方法中,其特征在于,在所述保护膜形成工序之前实施电阻金属板厚度测量工序,在所述电阻金属板厚度测量工序中测量形成所述多个保护膜的所述电阻金属板的宽度方向的各位置的厚度,在所述保护膜形成工序中,根据在所述电阻金属板厚度测量工序中测量到的所述电阻金属板的宽度方向的各位置的厚度,分别设定所述多个保护膜的宽度,因此除了具有所述第三发明的效果以外,还能够根据电阻金属板的宽度方向的厚度不均,调整保护膜的宽度(芯片电阻器的保护膜的长度)。因此,可以降低因电阻金属板的宽度方向的厚度不均带来的芯片电阻器的电阻值的不均。According to the manufacturing method of the metal plate low-resistance chip resistor of the fourth invention, in the manufacturing method of the metal plate low-resistance chip resistor of the third invention, it is characterized in that the resistance metal plate thickness is implemented before the protective film forming step. a measuring step of measuring the thickness of each position in the width direction of the resistive metal plate on which the plurality of protective films are formed in the resistive metal plate thickness measuring step; The thickness of each position in the width direction of the resistance metal plate measured in the metal plate thickness measurement step is used to set the widths of the plurality of protective films respectively. Therefore, in addition to the effect of the third invention, it is also possible to Adjust the width of the protective film (the length of the protective film of the chip resistor) to adjust the thickness of the resistance metal plate in the width direction. Therefore, variation in the resistance value of the chip resistor due to thickness variation in the width direction of the resistance metal plate can be reduced.
附图说明Description of drawings
图1是表示本发明的实施方式的金属板低电阻芯片电阻器的制造工序的流程图。FIG. 1 is a flowchart showing a manufacturing process of a metal plate low-resistance chip resistor according to an embodiment of the present invention.
图2的(a)是用于对带状电阻金属板切断工序进行说明的带状电阻金属板的立体图,图2的(b)是用于说明带状电阻金属板切断工序的矩形电阻金属板的俯视图。Fig. 2(a) is a perspective view of a strip-shaped resistive metal plate for explaining the step of cutting a strip-shaped resistive metal plate, and Fig. 2(b) is a rectangular resistive metal plate for explaining the step of cutting a strip-shaped resistive metal plate top view.
图3的(a)是用于对电阻金属板厚度测量工序进行说明的电阻金属板的立体图,图3的(b)是用于对电阻金属板厚度测量工序进行说明的电阻金属板的俯视图,图3的(c)是用于对电阻金属板厚度测量工序进行说明的电阻金属板的截面放大图(沿图3的(b)的A-A线的截面放大图)。(a) of FIG. 3 is a perspective view of a resistance metal plate for explaining the resistance metal plate thickness measurement process, and FIG. 3 (b) is a plan view of a resistance metal plate for illustrating a resistance metal plate thickness measurement process, (c) of FIG. 3 is an enlarged cross-sectional view of the resistance metal plate (enlarged cross-section along line A-A of FIG. 3( b )) for explaining the resistance metal plate thickness measurement process.
图4的(a)是用于对保护膜形成工序进行说明的电阻金属板等的立体图,图4的(b)是用于对保护膜形成工序进行说明的电阻金属板等的俯视图,图4的(c)是用于对保护膜形成工序进行说明的电阻金属板等的截面放大图(沿图4的(b)的B-B线的截面放大图)。(a) of FIG. 4 is a perspective view of a resistive metal plate and the like for explaining a protective film forming process, and FIG. 4( b ) is a plan view of a resistive metal plate and the like for explaining a protective film forming process. (c) is an enlarged cross-sectional view of a resistive metal plate and the like (enlarged cross-sectional view along line B-B in FIG. 4( b )) for explaining the protective film forming process.
图5的(a)是用于对狭缝形成工序进行说明的电阻金属板等的立体图,图5的(b)是用于对狭缝形成工序进行说明的电阻金属板等的俯视图,图5的(c)是用于对狭缝形成工序进行说明的电阻金属板等的截面放大图(沿图5的(b)的C-C线的截面放大图)。(a) of FIG. 5 is a perspective view of a resistance metal plate and the like for explaining a slit forming process, and FIG. 5( b ) is a plan view of a resistance metal plate and the like for explaining a slit forming process. (c) is an enlarged cross-sectional view (enlarged cross-sectional view along line C-C of FIG. 5( b )) of a resistance metal plate or the like for explaining the slit forming step.
图6的(a)是用于对电极镀膜形成工序进行说明的电阻金属板等的立体图,图6的(b)是用于对电极镀膜形成工序进行说明的电阻金属板等的俯视图,图6的(c)是用于对电极镀膜形成工序进行说明的电阻金属板等的截面放大图(沿图6的(b)的D-D线的截面放大图)。6( a ) is a perspective view of a resistance metal plate and the like for explaining the electrode plating film forming process, and FIG. 6( b ) is a plan view of the resistance metal plate and the like for explaining the electrode plating film forming process. (c) is an enlarged cross-sectional view (enlarged cross-sectional view along line D-D of FIG. 6(b)) of a resistance metal plate and the like for explaining the electrode plating film forming process.
图7的(a)是用于对长条状部切取工序进行说明的电阻金属板等的立体图,图7的(b)是用于对长条状部切取工序和长条状部切断工序进行说明的长条状部的立体图,图7的(c)是用于对长条状部切断工序进行说明的金属板低电阻芯片电阻器(单片)的立体图。(a) of FIG. 7 is a perspective view of a resistance metal plate and the like for explaining the elongated portion cutting process, and FIG. 7 (b) is a perspective view for performing the elongated portion cutting process and the elongated portion cutting process. The perspective view of the elongated portion to be described, FIG. 7( c ) is a perspective view of a metal plate low-resistance chip resistor (single piece) for explaining the elongated portion cutting process.
图8是表示与本发明的实施方式的金属板低电阻芯片电阻器的制造方法有关的金属板低电阻芯片电阻器的各尺寸关系的表。8 is a table showing the relationship among dimensions of the metal plate low-resistance chip resistor related to the manufacturing method of the metal plate low-resistance chip resistor according to the embodiment of the present invention.
图9是表示本发明的另一实施方式的金属板低电阻芯片电阻器的制造工序的流程图。9 is a flow chart showing a manufacturing process of a metal plate low-resistance chip resistor according to another embodiment of the present invention.
图10的(a)是用于对带状电阻金属板切断工序进行说明的带状电阻金属板的立体图,图10的(b)是用于说明带状电阻金属板切断工序的矩形电阻金属板的俯视图。Fig. 10(a) is a perspective view of a strip-shaped resistive metal plate for explaining the strip-shaped resistive metal plate cutting process, and Fig. 10(b) is a rectangular resistive metal plate for illustrating the strip-shaped resistive metal plate cutting process top view.
图11的(a)是用于对电阻金属板厚度测量工序进行说明的电阻金属板的立体图,图11的(b)是用于对电阻金属板厚度测量工序进行说明的电阻金属板的俯视图,图11的(c)是用于对电阻金属板厚度测量工序进行说明的电阻金属板的截面放大图(沿图11的(b)的A1-A1线的截面放大图)。(a) of FIG. 11 is a perspective view of the resistance metal plate for describing the resistance metal plate thickness measurement process, and FIG. 11 (b) is a plan view of the resistance metal plate for describing the resistance metal plate thickness measurement process, (c) of FIG. 11 is an enlarged cross-sectional view of the resistance metal plate (enlarged cross-section along line A1-A1 of FIG. 11(b) ) for explaining the resistance metal plate thickness measurement step.
图12的(a)是用于对保护膜形成工序进行说明的电阻金属板等的立体图,图12的(b)是用于对保护膜形成工序进行说明的电阻金属板等的俯视图,图12的(c)是用于对保护膜形成工序进行说明的电阻金属板等的截面放大图(沿图12的(b)的B1-B1线的截面放大图)。(a) of FIG. 12 is a perspective view of a resistive metal plate and the like for explaining a protective film forming process, and FIG. 12 (b) is a plan view of a resistive metal plate and the like for explaining a protective film forming process. (c) is an enlarged cross-sectional view (enlarged cross-sectional view along line B1-B1 of FIG. 12(b)) of a resistive metal plate or the like for explaining the protective film forming step.
图13的(a)是用于对长条状切断工序进行说明的电阻金属板等的立体图,图13的(b)是用于对长条状切断工序进行说明的长条状部的立体图,图13的(c)是用于对长条状切断工序进行说明的长条状部的截面放大图(沿图13的(b)的C1-C1线的截面放大图)。(a) of FIG. 13 is a perspective view of a resistance metal plate or the like for explaining the elongated cutting process, and FIG. 13 (b) is a perspective view of an elongated part for explaining the elongated cutting process, (c) of FIG. 13 is an enlarged cross-sectional view of the elongated portion (enlarged cross-sectional view along line C1-C1 of FIG. 13(b) ) for explaining the elongated cutting step.
图14的(a)是用于对电极镀膜形成工序进行说明的长条状部的立体图,图14的(c)是用于对电极镀膜形成工序进行说明的长条状部的截面放大图(沿图14的(a)的D1-D1线的截面放大图)。(a) of FIG. 14 is a perspective view of an elongated portion for describing the electrode plating film forming process, and FIG. 14 (c) is an enlarged cross-sectional view of the elongated portion for describing the electrode plating film forming process ( An enlarged cross-sectional view along line D1-D1 of (a) of FIG. 14 ).
图15的(a)是用于对单片切断工序进行说明的长条状部的立体图,图15的(b)是用于对单片切断工序进行说明的金属板低电阻芯片电阻器(单片)的立体图。Fig. 15(a) is a perspective view of a strip-shaped portion for explaining the single-piece cutting process, and Fig. 15(b) is a metal plate low-resistance chip resistor (single-piece) for describing the single-piece cutting process. 3D view of the sheet).
图16的(a)是表示金属板低电阻芯片电阻器的结构的立体图,图16的(b)是表示所述金属板低电阻芯片电阻器的结构的俯视图,图16的(c)是表示所述金属板低电阻芯片电阻器的结构的、沿图16的(b)的E-E线的截面图。(a) of FIG. 16 is a perspective view showing the structure of a metal plate low resistance chip resistor, FIG. 16 (b) is a top view showing the structure of the metal plate low resistance chip resistor, and FIG. 16 (c) is a view showing A cross-sectional view of the structure of the metal plate low-resistance chip resistor along line E-E of FIG. 16( b ).
图17是表示以往的金属板低电阻芯片电阻器的制造工序的流程图。FIG. 17 is a flow chart showing a manufacturing process of a conventional metal plate low-resistance chip resistor.
图18的(a)是用于对狭缝形成工序进行说明的电阻金属板的立体图,图18的(b)是用于对狭缝形成工序进行说明的电阻金属板的俯视图,图18的(c)是用于对狭缝形成工序进行说明的电阻金属板的截面放大图(沿图18的(b)的F-F线的截面放大图)。(a) of FIG. 18 is a perspective view of a resistance metal plate for explaining a slit forming process, FIG. 18 (b) is a plan view of a resistance metal plate for illustrating a slit forming process, and FIG. 18 ( c) is an enlarged cross-sectional view of the resistance metal plate (enlarged cross-sectional view along line F-F of FIG. 18( b )) for explaining the slit forming step.
图19的(a)是用于对保护膜形成工序进行说明的电阻金属板等的立体图,图19的(b)是用于对保护膜形成工序进行说明的电阻金属板等的俯视图,图19的(c)是用于对保护膜形成工序进行说明的电阻金属板等的截面放大图(沿图19的(b)的G-G线的截面放大图)。(a) of FIG. 19 is a perspective view of a resistive metal plate and the like for explaining a protective film forming process, and FIG. 19 (b) is a plan view of a resistive metal plate and the like for explaining a protective film forming process. FIG. 19 (c) is an enlarged cross-sectional view (enlarged cross-sectional view taken along line G-G of FIG. 19( b )) of a resistive metal plate and the like for explaining the protective film forming step.
图20是表示与以往的金属板低电阻芯片电阻器的制造方法有关的金属板低电阻芯片电阻器的各尺寸关系的表。FIG. 20 is a table showing the relationship among dimensions of metal plate low resistance chip resistors related to a conventional manufacturing method of metal plate low resistance chip resistors.
具体实施方式detailed description
以下,参照附图具体说明本发明的实施方式。Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.
参照图1~图7和图16,说明本发明的实施方式的芯片电阻器的制造方法。另外,关于通过本实施方式的芯片电阻器的制造方法制造的金属板低电阻芯片电阻器的结构,由于已经参照图16进行了说明,故在此省略对其的详细说明。Referring to FIGS. 1 to 7 and 16 , a method for manufacturing a chip resistor according to an embodiment of the present invention will be described. In addition, since the structure of the metal plate low-resistance chip resistor manufactured by the manufacturing method of the chip resistor of this embodiment has already been demonstrated with reference to FIG. 16, detailed description is abbreviate|omitted here.
在本实施方式中,通过依次实施图1的工序流程图所示的带状电阻金属板切断工序(步骤S11)、电阻金属板厚度测量工序(步骤S12)、保护膜形成工序(步骤S13)、狭缝形成工序(步骤S14)、电极镀膜形成工序(步骤S15)、长条状部切取工序(步骤S16)以及长条状部切断工序(步骤S17),制造如图16所示的结构的金属板低电阻芯片电阻器1。In the present embodiment, the step of cutting the band-shaped resistance metal plate (step S11), the step of measuring the thickness of the resistance metal plate (step S12), the step of forming the protective film (step S13), and The slit forming process (step S14), the electrode coating forming process (step S15), the elongated portion cutting process (step S16) and the elongated portion cutting process (step S17), manufacture the metal structure shown in Figure 16 Board Low Resistance Chip Resistor1.
具体地说,如图2的(a)所示,在带状电阻金属板切断工序(步骤S11)中,利用激光、电火花线切割机(ワイヤ放電)、切刀等切断装置,将通过输送装置(省略图示)向箭头J方向输送来的带状的电阻金属板2A,在用单点划线(假想线)K所示的切割线位置处切断。带状的电阻金属板2A由FeCrAl系、CuNi系或CuMn系等材料制成,为了得到所希望的厚度,通过将板坯状态的所述材料经各种工序,反复进行退火工序和轧制工序来进行制造。Specifically, as shown in FIG. 2(a), in the band-shaped resistance metal plate cutting process (step S11), cutting devices such as a laser, a wire electric discharge machine (Way Ya discharge), and a cutter are used to cut the strip-shaped resistance metal plate that passes through the conveyor belt. The strip-shaped resistance metal plate 2A conveyed in the direction of arrow J by a device (not shown) is cut at the position of the cutting line K indicated by a dashed-dotted line (imaginary line). The strip-shaped resistance metal plate 2A is made of FeCrAl-based, CuNi-based, or CuMn-based materials. In order to obtain a desired thickness, the material in the slab state is subjected to various processes, and the annealing process and rolling process are repeated. to manufacture.
将带状的电阻金属板2A在所述切断位置切断后的结果,得到图2的(b)所示的矩形的电阻金属板2B。如图2的(a)所示,在带状的电阻金属板2A上,在宽度方向的两侧、且沿长度方向以一定的间隔设有定位标记5。所述定位标记5位于图2的(b)所示矩形的电阻金属板2B的长度方向的前端部、且位于宽度方向的两侧。另外,不限于此,定位标记5可以仅存在于所述宽度方向的单侧,此外,也可以设于电阻金属板2B的长度方向的后端部或中央部等。As a result of cutting the strip-shaped resistance metal plate 2A at the cutting position, a rectangular resistance metal plate 2B shown in FIG. 2( b ) is obtained. As shown in FIG. 2( a ), positioning marks 5 are provided on both sides in the width direction and at regular intervals in the longitudinal direction on the strip-shaped resistance metal plate 2A. The positioning marks 5 are located at the front end in the longitudinal direction of the rectangular resistance metal plate 2B shown in FIG. 2( b ) and on both sides in the width direction. In addition, without being limited thereto, the positioning mark 5 may exist only on one side in the width direction, or may be provided on the rear end or center of the resistance metal plate 2B in the longitudinal direction.
如图3的(a)~图3的(c)所示,在接下来的电阻金属板厚度测量工序(步骤S12)中,利用板厚测量装置(省略图示)测量用于形成多个(图中示例为4个)保护膜3A、3B(用假想线(单点划线)表示)的电阻金属板2B的宽度方向(图3的(b)的左右方向)的各位置处的厚度T1、T2、T3、T4。以定位标记5为基准设定用于测量所述板厚的电阻金属板2B的宽度方向的各位置。As shown in Fig. 3(a) to Fig. 3(c), in the next step of measuring the thickness of the resistance metal plate (step S12), a plate thickness measuring device (not shown) is used to measure the resistance metal plate used to form a plurality of ( Thickness T at each position of the resistance metal plate 2B in the width direction (the left-right direction of FIG. 1 , T2 , T3 , T4 . Each position in the width direction of the resistance metal plate 2B for measuring the plate thickness is set with reference to the positioning mark 5 .
另外,在图示例子中,针对各保护膜3A、3B,在用于测量板厚的电阻金属板2B的宽度方向的各位置分别设定一处测量板厚的位置,但是不限于此。例如,可以分别针对各保护膜3A、3B,在用于测量板厚的电阻金属板2B的宽度方向的各位置分别设定多处测量板厚的位置,并将在所述多个部位处测量到的电阻金属板2B的厚度的平均值,作为电阻金属板2B在宽度方向的各位置处的厚度T1、T2、T3、T4。In the illustrated example, one position for measuring the plate thickness is set at each position in the width direction of the resistance metal plate 2B for measuring the plate thickness for each of the protective films 3A and 3B, but the present invention is not limited thereto. For example, for each of the protective films 3A and 3B, a plurality of positions for measuring the plate thickness can be respectively set at each position in the width direction of the resistance metal plate 2B for measuring the plate thickness, and will be measured at the multiple positions. The average value of the obtained thicknesses of the resistance metal plate 2B is used as the thicknesses T 1 , T 2 , T 3 , and T 4 of the resistance metal plate 2B at each position in the width direction.
如图4的(a)~图4的(c)所示,在接下来的保护膜形成工序(步骤S13)中,通过丝网印刷法或光刻法等,在电阻金属板2B的表面2B-1和背面2B-2上分别形成多个(图中示例为4个)保护膜3A、3B。所述保护膜3A、3B在电阻金属板2B的长度方向上延伸、且在电阻金属板2B的宽度方向上相互平行。另外,以定位标记5为基准设定形成保护膜3A、3B的位置。As shown in Fig. 4(a) to Fig. 4(c), in the next protective film forming process (step S13), the surface 2B of the resistance metal plate 2B is formed by screen printing or photolithography. - 1 and the rear surface 2B- 2 are respectively formed with a plurality (four in the figure) of protective films 3A, 3B. The protective films 3A and 3B extend in the longitudinal direction of the resistance metal plate 2B and are parallel to each other in the width direction of the resistance metal plate 2B. In addition, the positions where the protective films 3A and 3B are formed are set with reference to the positioning marks 5 .
此外,在所述保护膜形成工序中,根据在前述的电阻金属板厚度测量工序(步骤S12)中测量到的电阻金属板2B的宽度方向的各位置处的厚度T1、T2、T3、T4,设定多个保护膜3A、3B的各自的宽度(即芯片电阻器1的保护膜3a、3b的长度)L21、L22、L23、L24。具体地说,根据下述的公式(2),计算出各保护膜3A、3B的宽度L21、L22、L23、L24。公式(2)是将公式(1)变形得到的公式。In addition, in the protective film forming step, based on the thicknesses T 1 , T 2 , and T 3 at each position in the width direction of the resistance metal plate 2B measured in the aforementioned resistance metal plate thickness measurement step (step S12 ), , T 4 , the respective widths of the plurality of protective films 3A, 3B (that is, the lengths of the protective films 3a, 3b of the chip resistor 1 ) L2 1 , L2 2 , L2 3 , L2 4 are set. Specifically, the widths L2 1 , L2 2 , L2 3 , and L2 4 of the protective films 3A, 3B are calculated according to the following formula (2). Formula (2) is a formula obtained by transforming Formula (1).
[数学式1][mathematical formula 1]
在公式(1)、公式(2)中,R表示芯片电阻器1的电阻值(目标电阻值),L2表示芯片电阻器1的保护膜3a、3b的长度(即电阻金属板2的被保护膜3a、3b覆盖的部分的长度),W表示芯片电阻器1的宽度(目标值)(即电阻金属板2的宽度),Tn表示电阻金属板2的厚度,ρ表示电阻金属板2的体积电阻率。即,芯片电阻器1的电阻值R,由电阻金属板2的被保护膜3A、3B覆盖部分的宽度W、长度L2、厚度Tn(L2/(W×Tn))以及电阻金属板2的体积电阻率ρ决定。In formula (1) and formula (2), R represents the resistance value (target resistance value) of the chip resistor 1, and L2 represents the length of the protective film 3a, 3b of the chip resistor 1 (that is, the protected resistance of the resistance metal plate 2). film 3a, 3b covered length), W represents the width (target value) of the chip resistor 1 (that is , the width of the resistance metal plate 2), Tn represents the thickness of the resistance metal plate 2, and ρ represents the thickness of the resistance metal plate 2. volume resistivity. That is, the resistance value R of the chip resistor 1, the width W, the length L2, the thickness T n (L2/(W×T n )) of the portion covered by the protective films 3A and 3B of the resistance metal plate 2 and the The volume resistivity ρ determines.
因为电阻值R(目标电阻值)、由长条状部切断工序(步骤17)决定的宽度W(目标值)、体积电阻率ρ为已知,厚度Tn(即电阻金属板2B的宽度方向的各位置处的厚度T1、T2、T3、T4)也通过前述的电阻金属板厚度测量工序(步骤S12)测量后为已知,所以使用所述值从所述的公式(2)可以计算出与电阻金属板2B的宽度方向的各位置处的厚度T1、T2、T3、T4对应的各保护膜3A、3B的宽度(即芯片电阻器1的保护膜3a、3b的长度)L21、L22、L23、L24。Because the resistance value R (target resistance value), the width W (target value) determined by the elongated portion cutting process (step 17), and the volume resistivity ρ are known, the thickness Tn (that is , the width direction of the resistance metal plate 2B) Thicknesses T 1 , T 2 , T 3 , T 4 at each position) are also known after being measured by the aforementioned resistance metal plate thickness measurement process (step S12), so use the value from the formula (2 ) can calculate the width of each protective film 3A, 3B corresponding to the thickness T 1 , T 2 , T 3 , T 4 at each position in the width direction of the resistance metal plate 2B (that is, the protective film 3a of the chip resistor 1, 3b length) L2 1 , L2 2 , L2 3 , L2 4 .
计算出各保护膜3A、3B的宽度L21、L22、L23、L24后,设定与所述计算值对应的丝网图案,通过基于所述丝网图案实施丝网印刷法,由此在电阻金属板2B的表面2B-1和背面2B-2上印刷环氧系树脂的浆料,并且通过对所述丝网印刷后的浆料进行烧结,从而形成各保护膜3A、3B。当然,当采用光刻法等时,也设定与各保护膜3A、3B的宽度L21、L22、L23、L24的计算值对应的图案,并形成各保护膜3A、3B。After calculating the widths L2 1 , L2 2 , L2 3 , and L2 4 of each protective film 3A, 3B, a screen pattern corresponding to the calculated value is set, and a screen printing method is performed based on the screen pattern. Here, an epoxy resin paste is printed on the front surface 2B-1 and the back surface 2B-2 of the resistance metal plate 2B, and the screen-printed paste is fired to form the protective films 3A, 3B. Of course, when photolithography or the like is used, a pattern corresponding to the calculated widths L2 1 , L2 2 , L2 3 , and L2 4 of each protective film 3A, 3B is set, and each protective film 3A, 3B is formed.
如图5的(a)~图5的(c)所示,在接下来的狭缝形成工序(步骤S14)中,在电阻金属板2B上形成多个(图中示例为5个)狭缝6。所述狭缝6在电阻金属板2B的长度方向(图5的(b)的上下方向)上延伸,并形成在电阻金属板2B的宽度方向(图5的(b)的左右方向)上邻接的保护膜3A、3B之间(即表面2B-1侧的保护膜3A、3A之间和背面2B-2侧的保护膜3B、3B之间)以及位于电阻金属板2B的宽度方向两侧的保护膜3A、3B的外侧(即表面2B-1侧的宽度方向两侧的保护膜3A的外侧和背面2B-2侧的宽度方向两侧的保护膜3B的外侧)。另外,以定位标记5为基准设定形成狭缝6的位置。通过形成所述多个狭缝6,电阻金属板2B的形状成为具有多个(图中示例为4个)长条状部7和连接部8的形状,所述长条状部7在电阻金属板2B的长度方向上延伸,所述连接部8分别连接所述多个长条状部7的长度方向(图5的(b)的上下方向)的两端。另外,图中狭缝6的宽度分别为宽度L41、L42、L43、L44、L45,长条状部7的电阻金属板2B的宽度(芯片电阻器1中电阻金属板2的长度L3)分别为宽度L31、L32、L33、L34。As shown in Fig. 5(a) to Fig. 5(c), in the next slit forming step (step S14), a plurality of (five in the figure in the example) slits are formed on the resistance metal plate 2B. 6. The slits 6 extend in the longitudinal direction of the resistance metal plate 2B (the up-and-down direction in FIG. 5( b )), and are formed adjacent to each other in the width direction of the resistance metal plate 2B (the left-to-right direction in FIG. 5( b )). Between the protective films 3A, 3B (that is, between the protective films 3A, 3A on the surface 2B-1 side and between the protective films 3B, 3B on the back 2B-2 side) and on both sides in the width direction of the resistance metal plate 2B The outer sides of the protective films 3A, 3B (that is, the outer sides of the protective film 3A on both sides in the width direction on the surface 2B- 1 side and the outer sides of the protective film 3B on both sides in the width direction on the back surface 2B- 2 side). In addition, the position where the slit 6 is formed is set with reference to the positioning mark 5 . By forming the plurality of slits 6, the shape of the resistance metal plate 2B becomes a shape having a plurality (four in the figure) of elongated portions 7 and connecting portions 8. The plate 2B extends in the longitudinal direction, and the connecting portions 8 connect both ends of the plurality of elongated portions 7 in the longitudinal direction (the vertical direction in FIG. 5( b )). In addition, the widths of the slits 6 in the figure are respectively widths L4 1 , L4 2 , L4 3 , L4 4 , and L4 5 , and the width of the resistance metal plate 2B of the elongated portion 7 (the width of the resistance metal plate 2 in the chip resistor 1 The length L3) is the width L3 1 , L3 2 , L3 3 , L3 4 , respectively.
例如利用以留下与连接部8以及比保护膜3A、3B更宽的长条状部7对应的部分的方式曝光显影得到的干膜,覆盖包含保护膜3A、3B的电阻金属板2B的表面2B-1和背面2B-2这两面,并在该状态下通过向电阻金属板2B的表面2B-1和背面2B-2这两面喷射适合于电阻金属板2B的各种类(各种材质)的蚀刻液的蚀刻法,由此通过蚀刻电阻金属板2B形成狭缝6。通过利用所述蚀刻法形成狭缝6,长条状部7的电阻金属板2B的侧面(狭缝6一侧的面)2B-5,成为与电阻金属板2B的表面2B-1和背面2B-2这两面成直角的平坦面,从而可以高精度地设定长条状部7的电阻金属板2B的宽度L31、L32、L33、L34(芯片电阻器1中电阻金属板2的长度L3)。另外,作为形成狭缝6的手段,不限于蚀刻法,也可用激光加工等手段。此外,在图示例子中,连接部8形成在长条状部7的长度方向的两端,但是不限于此,也可以仅在长条状部7的长度方向的任意一端形成连接部8。For example, the surface of the resistive metal plate 2B including the protective films 3A, 3B is covered by exposing and developing a dry film obtained by exposing and developing a portion corresponding to the connection portion 8 and the elongated portion 7 wider than the protective films 3A, 3B, for example. 2B-1 and the back side 2B-2, and in this state, various types (various materials) suitable for the resistance metal plate 2B are sprayed onto the surface 2B-1 and the back side 2B-2 of the resistance metal plate 2B. An etching method using an etchant, whereby the slit 6 is formed by etching the resistance metal plate 2B. By forming the slit 6 by the etching method, the side surface (the surface on the side of the slit 6) 2B-5 of the resistance metal plate 2B of the elongated portion 7 becomes the surface 2B-1 and the back surface 2B of the resistance metal plate 2B. -2 These two flat surfaces are at right angles, so that the width L3 1 , L3 2 , L3 3 , L3 4 of the resistance metal plate 2B of the elongated portion 7 can be set with high precision (the resistance metal plate 2 in the chip resistor 1 length L3). In addition, the means for forming the slit 6 is not limited to the etching method, and means such as laser processing may also be used. In addition, in the illustrated example, the connecting portion 8 is formed at both ends of the elongated portion 7 in the longitudinal direction, but the present invention is not limited thereto, and the connecting portion 8 may be formed only at either end of the elongated portion 7 in the longitudinal direction.
如图6的(a)~图6的(c)所示,在接下来的电极镀膜形成工序(步骤S15)中,针对各长条状部7的未形成保护膜3A、3B而露出的电阻金属板2B的宽度方向(图6的(c)的左右方向)的两端部2B-3、2B-4的表面,通过电镀法形成电极镀膜4A、4B。另外,此时连接部8等电阻金属板2B的周缘部上也形成镀膜4C(为便于说明,以单点划线的透视图表示)。作为电极镀膜4A、4B,形成例如镍镀膜和锡镀膜。此外,电极镀膜4A、4B也可以是通过依次进行冲击镀镍(ニッケルストライクめっき)、镀铜、镀镍、镀锡膜而得到的镀膜。As shown in FIG. 6( a ) to FIG. 6( c ), in the subsequent electrode plating film formation process (step S15 ), the exposed resistors for the elongated portions 7 without the protective films 3A and 3B are exposed. Electrode plating films 4A and 4B are formed on the surfaces of both ends 2B-3 and 2B-4 of the metal plate 2B in the width direction (left-right direction in FIG. 6(c) ) by electroplating. In addition, at this time, the plating film 4C is also formed on the peripheral portion of the resistance metal plate 2B such as the connection portion 8 (shown in a perspective view with a dotted line for convenience of description). As the electrode plating films 4A, 4B, nickel plating films and tin plating films are formed, for example. In addition, the electrode plating films 4A and 4B may be plated films obtained by sequentially performing nickel strike plating, copper plating, nickel plating, and tin plating.
如图7的(a)和图7的(b)所示,在接下来的长条状部切取工序(步骤S16)中,通过利用激光、电火花线切割机、切刀等切断装置在单点划线(假想线)所示的切断位置M切断电阻金属板2B,由此从连接部8切取长条状部7。图7的(b)中放大表示了从连接部8切取的多个长条状部7中的一个。As shown in Fig. 7(a) and Fig. 7(b), in the next elongated part cutting process (step S16), by using a cutting device such as a laser, a wire electric discharge machine, a cutter, etc. A cutting position M indicated by a dashed-dotted line (imaginary line) cuts the resistance metal plate 2B, whereby the elongated portion 7 is cut out from the connection portion 8 . One of the plurality of elongated portions 7 cut out from the connecting portion 8 is enlargedly shown in FIG. 7( b ).
如图7的(b)和图7的(c)所示,在接下来的长条状部切断工序(步骤S17)中,利用激光、电火花线切割机、切刀等切断装置,在单点划线(假想线)所示的切断位置N将长条状部7切断为多个(图中示例为10个)单片。这样,制造出图7的(c)所示的金属板低电阻芯片电阻器1。即,通过将长条状部7切断为多个单片,从长条状部7的电阻金属板2B、保护膜3A、3B和电极镀膜4A、4B,分别形成芯片电阻器1的电阻金属板2、保护膜3a、3b和电极镀膜4a、4b。As shown in Fig. 7(b) and Fig. 7(c), in the next elongated part cutting process (step S17), using a cutting device such as a laser, a wire electric discharge machine, a cutter, etc., The cutting position N indicated by the dashed-dotted line (imaginary line) cuts the elongated portion 7 into a plurality of (ten in the example in the figure) individual pieces. In this way, the metal plate low-resistance chip resistor 1 shown in (c) of FIG. 7 is manufactured. That is, by cutting the elongated portion 7 into a plurality of individual pieces, the resistance metal plate of the chip resistor 1 is formed from the resistance metal plate 2B, the protective films 3A, 3B, and the electrode plating films 4A, 4B of the elongated portion 7, respectively. 2. Protective films 3a, 3b and electrode coatings 4a, 4b.
关于长条状部7的尺寸与芯片电阻器1的尺寸的对应关系,长条状部7的电阻金属板2B与电极镀膜4B、4B的宽度L1相当于芯片电阻器1的全长L1,长条状部7的电极镀膜4A、4B的宽度C相当于芯片电阻器1的电极镀膜4a、4b的长度C,长条状部7的保护膜3A、3B的宽度L2相当于芯片电阻器1的保护膜3a、3b的长度L2,长条状部7的电阻金属板2B的宽度L3相当于芯片电阻器1的电阻金属板2的长度L3。Regarding the corresponding relationship between the size of the elongated portion 7 and the size of the chip resistor 1, the width L1 of the resistance metal plate 2B and the electrode plating films 4B, 4B of the elongated portion 7 is equivalent to the entire length L1 of the chip resistor 1, and the length L1 is equal to the length L1 of the chip resistor 1. The width C of the electrode coating films 4A, 4B of the strip-shaped portion 7 corresponds to the length C of the electrode coating films 4a, 4b of the chip resistor 1, and the width L2 of the protective films 3A, 3B of the strip-shaped portion 7 corresponds to the length C of the chip resistor 1. The length L2 of the protective films 3 a and 3 b and the width L3 of the resistance metal plate 2B of the elongated portion 7 correspond to the length L3 of the resistance metal plate 2 of the chip resistor 1 .
另外,针对从带状的电阻金属板2A依次切取的矩形的电阻金属板2B的任何一个,都实施所述包含了电阻金属板厚度测量工序的芯片电阻器的制造工序。这是因为,在带状的电阻金属板2A的长度方向上有时也会产生厚度不均,此时每个电阻金属板2B的宽度方向的厚度不均都不同。另外,当带状的电阻金属板2A的长度方向上几乎不存在厚度不均时,也可以仅针对从带状的电阻金属板2A最初切取的矩形的电阻金属板2B,实施厚度测量以决定保护膜3A、3B的宽度,并将所述保护膜3A、3B的宽度应用于从带状的电阻金属板2A切取的第二个以后的矩形电阻金属板2B上形成的保护膜3A、3B。In addition, the above-described manufacturing process of the chip resistor including the resistance metal plate thickness measurement step is implemented for any of the rectangular resistance metal plates 2B sequentially cut out from the strip-shaped resistance metal plate 2A. This is because thickness unevenness sometimes occurs in the longitudinal direction of the strip-shaped resistance metal plate 2A, and in this case, the thickness unevenness in the width direction of each resistance metal plate 2B is different. In addition, when there is almost no thickness unevenness in the longitudinal direction of the strip-shaped resistance metal plate 2A, only the rectangular resistance metal plate 2B initially cut from the strip-shaped resistance metal plate 2A may be measured to determine the thickness. The width of the films 3A, 3B is applied to the protective films 3A, 3B formed on the second and subsequent rectangular resistance metal plates 2B cut from the strip-shaped resistance metal plate 2A.
如上所述,按照本实施方式的金属板低电阻芯片电阻器的制造方法,其是使用矩形的电阻金属板2B的芯片电阻器的制造方法,通过依次实施下述工序来制造芯片电阻器1:保护膜形成工序(步骤S13),分别针对电阻金属板2B的表面2B-1和背面2B-2,在电阻金属板2B的宽度方向上形成多个保护膜3A、3B,所述保护膜3A、3B在电阻金属板2B的长度方向上延伸;狭缝形成工序(步骤S14),通过在电阻金属板2B上形成狭缝6,将电阻金属板2B的形状形成为具有多个长条状部7和连接部8的形状,所述狭缝6分别在所述宽度方向上邻接的保护膜3A、3B之间和位于所述宽度方向两侧的保护膜3A、3B的外侧沿电阻金属板2B的长度方向延伸,多个长条状部7具有比保护膜3A、3B更宽的宽度并在电阻金属板2B的长度方向上延伸,连接部8分别连接所述多个长条状部7的长度方向的两端;电极镀膜形成工序(步骤S15),针对未形成有保护膜3A、3B且露出有电阻金属板2B的长条状部7的宽度方向的两端部2B-3、2B-4的表面,形成电极镀膜4A、4B;长条状部切取工序(步骤S16),从连接部8切取长条状部7;以及长条状部切断工序(步骤S17),将长条状部7切断为多个单片,因此先于狭缝6(即长条状部7)形成保护膜3A、3B。As described above, according to the method of manufacturing a metal plate low-resistance chip resistor of this embodiment, which is a method of manufacturing a chip resistor using the rectangular resistance metal plate 2B, the chip resistor 1 is manufactured by sequentially implementing the following steps: In the protective film forming step (step S13), a plurality of protective films 3A, 3B are formed on the front surface 2B-1 and the back surface 2B-2 of the resistance metal plate 2B in the width direction of the resistance metal plate 2B. 3B extends in the longitudinal direction of the resistance metal plate 2B; the slit forming process (step S14), by forming the slit 6 on the resistance metal plate 2B, the shape of the resistance metal plate 2B is formed to have a plurality of elongated portions 7 and the shape of the connecting portion 8, the slits 6 are respectively located between the protective films 3A, 3B adjacent in the width direction and on the outer sides of the protective films 3A, 3B located on both sides in the width direction along the edge of the resistance metal plate 2B. Extending in the longitudinal direction, a plurality of elongated portions 7 have a wider width than the protective films 3A, 3B and extend in the longitudinal direction of the resistance metal plate 2B, and connecting portions 8 connect the lengths of the plurality of elongated portions 7 respectively. The two ends of direction; Electrode plating film formation process (step S15), for not being formed with protective film 3A, 3B and exposing the two ends 2B-3,2B-4 of the width direction of elongated portion 7 of resistance metal plate 2B The surface of the electrode coating 4A, 4B is formed; the elongated portion cutting process (step S16), cuts the elongated portion 7 from the connecting portion 8; and the elongated portion cutting process (step S17), the elongated portion 7 Since it is cut into a plurality of individual pieces, the protective films 3A and 3B are formed prior to the slit 6 (that is, the elongated portion 7 ).
因此,即使在例如要求芯片电阻器1进一步小型化、长条状部7的电阻金属板2B的宽度L3变得更窄时,也可以不受所述长条状部7的电阻金属板2B的宽度L3影响地容易地形成保护膜3A、3B。即,能容易地利用丝网印刷法或光刻法等形成保护膜3A、3B。Therefore, even if the chip resistor 1 is required to be further miniaturized and the width L3 of the resistance metal plate 2B of the elongated portion 7 becomes narrower, it is not affected by the resistance metal plate 2B of the elongated portion 7. The protective films 3A, 3B can be easily formed without affecting the width L3. That is, the protective films 3A and 3B can be easily formed by a screen printing method, a photolithography method, or the like.
此外,还能扩大保护膜3A、3B的宽度(芯片电阻器1的保护膜3a、3b的长度)L2的调整的允许范围。当参照图8说明前述的芯片电阻器1的尺寸例子时,例如,当将保护膜3a、3b的长度L2设定为0.9mm时,在电极镀膜4a、4b的全长2×C最长0.6mm(=2×(0.2+0.1))的情况和最短0.2mm(=2×(0.2-0.1))的情况下,芯片电阻器1的全长L1分别为1.5mm和1.1mm。因此,只要将芯片电阻器1的全长L1设定为作为允许尺寸的最短的1.5mm(=1.6-0.1)即可。当将保护膜3a、3b的长度L2设定为1.2mm时,在电极镀膜4a、4b的全长2×C最长0.6mm的情况下和最短0.2mm的情况下,芯片电阻器1的全长L1分别为1.8mm和1.4mm。因此,只要将芯片电阻器1的全长L1设定在1.5~1.7mm的范围即可。当将保护膜3a、3b的长度L2设定为1.5mm时,在电极镀膜4a、4b的全长2×C最长0.6mm的情况和最短0.2mm的情况下,芯片电阻器1的全长L1分别为2.1mm和1.7mm。因此,只要将芯片电阻器1的全长L1设定在作为允许尺寸的最长的1.7mm的范围即可。因此,保护膜3a、3b的长度L2的调整允许范围为0.6mm,大于以往的制造方法中的调整允许范围的0.4mm(参照图20)。In addition, the allowable range of adjustment of the width L2 of the protective films 3A and 3B (the length of the protective films 3 a and 3 b of the chip resistor 1 ) can be expanded. When referring to FIG. 8 to describe the size example of the aforementioned chip resistor 1, for example, when the length L2 of the protective film 3a, 3b is set to 0.9mm, the total length 2×C of the electrode plating film 4a, 4b is at most 0.6 mm. The overall length L1 of the chip resistor 1 is 1.5 mm and 1.1 mm in the case of mm (=2×(0.2+0.1)) and the shortest 0.2 mm (=2×(0.2−0.1)), respectively. Therefore, what is necessary is just to set the full length L1 of the chip resistor 1 to 1.5 mm (=1.6-0.1) which is the shortest allowable dimension. When the length L2 of the protective film 3a, 3b is set to 1.2 mm, the overall length 2×C of the electrode plating film 4a, 4b is the longest 0.6 mm and the shortest is 0.2 mm, the overall length of the chip resistor 1 The lengths L1 are 1.8 mm and 1.4 mm, respectively. Therefore, what is necessary is just to set the full length L1 of the chip resistor 1 in the range of 1.5-1.7 mm. When the length L2 of the protective films 3a and 3b is set to 1.5mm, the total length of the chip resistor 1 is the maximum length 2×C of the electrode plating films 4a and 4b at the maximum of 0.6mm and the minimum of 0.2mm. L1 is 2.1mm and 1.7mm, respectively. Therefore, what is necessary is just to set the full length L1 of the chip resistor 1 in the range of 1.7 mm which is the longest allowable dimension. Therefore, the allowable adjustment range of the length L2 of the protective films 3 a and 3 b is 0.6 mm, which is larger than the 0.4 mm adjustment allowable range in the conventional manufacturing method (see FIG. 20 ).
此外,按照本实施方式的金属板低电阻芯片电阻器的制造方法,在保护膜形成工序(步骤S13)之前实施电阻金属板厚度测量工序(步骤S12),电阻金属板厚度测量工序测量形成多个保护膜3A、3B的电阻金属板2B的宽度方向的各位置处的厚度T1、T2、T3、T4,在保护膜形成工序(步骤S13)中,根据在电阻金属板厚度测量工序(步骤S12)中测量到的所述电阻金属板2B的宽度方向的各位置处的厚度T1、T2、T3、T4,分别设定所述多个保护膜3A、3B的宽度L21、L22、L23、L24,因此本实施方式的金属板低电阻芯片电阻器的制造方法还能够根据电阻金属板2B的宽度方向上的厚度不均来调整保护膜3A、3B的宽度(芯片电阻器1的保护膜3a、3b的长度)。因此,可以降低因电阻金属板2B的宽度方向上的厚度不均导致的芯片电阻器1的电阻值的不均。In addition, according to the manufacturing method of the metal plate low-resistance chip resistor of this embodiment, the resistive metal plate thickness measurement process (step S12) is performed before the protective film forming process (step S13), and the resistive metal plate thickness measurement process measures the thickness of a plurality of The thicknesses T 1 , T 2 , T 3 , and T 4 of the protective films 3A, 3B at respective positions in the width direction of the resistance metal plate 2B are based on the thickness measurement process of the resistance metal plate in the process of forming the protective film (step S13). The thicknesses T 1 , T 2 , T 3 , and T 4 at each position in the width direction of the resistance metal plate 2B measured in (step S12 ) set the width L2 of the plurality of protective films 3A, 3B respectively. 1 , L2 2 , L2 3 , L2 4 , so the manufacturing method of the metal plate low-resistance chip resistor of this embodiment can also adjust the width of the protective films 3A, 3B according to the thickness unevenness in the width direction of the resistance metal plate 2B (The length of the protective films 3a, 3b of the chip resistor 1). Therefore, variation in the resistance value of the chip resistor 1 due to thickness variation in the width direction of the resistance metal plate 2B can be reduced.
另外,在所述的金属板低电阻芯片电阻器的制造方法中,不限于从带状的电阻金属板2A切取矩形的电阻金属板2B,并针对所述矩形的电阻金属板2B形成保护膜3A、3B、狭缝6(长条状部7)和电极镀膜4A、4B,然后切取长条状部7。即,也可以不切取矩形的电阻金属板2B,而是针对带状的电阻金属板2A形成保护膜3A、3B、狭缝6(长条状部7)和电极镀膜4A、4B,然后切取长条状部7。In addition, in the manufacturing method of the metal plate low-resistance chip resistor, it is not limited to cut out the rectangular resistance metal plate 2B from the strip-shaped resistance metal plate 2A, and form the protective film 3A on the rectangular resistance metal plate 2B. , 3B, slit 6 (strip-shaped portion 7 ) and electrode coatings 4A, 4B, and then cut the strip-shaped portion 7 . That is, instead of cutting out the rectangular resistance metal plate 2B, protective films 3A, 3B, slits 6 (elongated portions 7) and electrode plating films 4A, 4B may be formed on the band-shaped resistance metal plate 2A, and then cut into long lengths. Strip part 7.
参照图9~图16,说明本发明另一实施方式的芯片电阻器的制造方法。另外,对于通过另一实施方式的芯片电阻器的制造方法制造的金属板低电阻芯片电阻器的结构,由于已经参照图16进行了说明,因此在此省略对其的详细说明。A method for manufacturing a chip resistor according to another embodiment of the present invention will be described with reference to FIGS. 9 to 16 . In addition, since the structure of the metal plate low-resistance chip resistor manufactured by the manufacturing method of the chip resistor of another embodiment has already been demonstrated with reference to FIG. 16, detailed description is abbreviate|omitted here.
在另一实施方式中,通过依次实施图9的工序流程图所示的带状电阻金属板切断工序(步骤S21)、电阻金属板厚度测量工序(步骤S22)、保护膜形成工序(步骤S23)、长条状切断工序(步骤S24)、电极镀膜形成工序(步骤S25)、单片切断工序(步骤S26),来制造图16所示结构的金属板低电阻芯片电阻器1。In another embodiment, the band-shaped resistance metal plate cutting process (step S21), the resistance metal plate thickness measurement process (step S22), and the protective film forming process (step S23) shown in the process flow chart of FIG. , strip-shaped cutting process (step S24), electrode plating film forming process (step S25), single piece cutting process (step S26), to manufacture the metal plate low resistance chip resistor 1 of the structure shown in Fig. 16 .
具体地说,如图10的(a)所示,在带状电阻金属板切断工序(步骤S21)中,利用激光、电火花线切割机、切刀等切断装置,将通过输送装置(省略图示)向箭头J1方向输送来的带状的电阻金属板12A,在用单点划线(假想线)K1所示的切割线位置切断。带状的电阻金属板12A由FeCrAl系、CuNi系或CuMn系等材料制成,为达到所希望的厚度,将板坯状态的所述材料经过各种工序,并通过反复进行退火工序和轧制工序来进行制造。Specifically, as shown in (a) of FIG. 10, in the band-shaped resistance metal plate cutting process (step S21), cutting devices such as lasers, wire electric discharge machines, and cutters are used to pass through the conveying device (not shown). Shown) The strip-shaped resistance metal plate 12A conveyed in the direction of the arrow J1 is cut at the cutting line position shown by the dashed-dotted line (imaginary line) K1. The strip-shaped resistance metal plate 12A is made of FeCrAl-based, CuNi-based or CuMn-based materials. In order to achieve the desired thickness, the material in the slab state is subjected to various processes, and the annealing process and rolling are repeated. process to manufacture.
将带状的电阻金属板12A在所述切断位置切断的结果,得到图10的(b)所示的矩形的电阻金属板12B。如图10的(a)所示,在带状的电阻金属板12A的宽度方向的两侧,在长度方向上以一定的间隔设置定位标记15。所述定位标记15位于如图10的(b)所示的矩形的电阻金属板12B的长度方向的前端部、且位于宽度方向的两侧。另外,不限于此,定位标记15可以仅设置在所述宽度方向的单侧,此外,也可以设在电阻金属板12B的长度方向的后端部或中央部等处。As a result of cutting the strip-shaped resistance metal plate 12A at the cutting position, a rectangular resistance metal plate 12B shown in FIG. 10( b ) is obtained. As shown in FIG. 10( a ), positioning marks 15 are provided at regular intervals in the longitudinal direction on both sides of the strip-shaped resistance metal plate 12A in the width direction. The positioning marks 15 are located at the front end in the longitudinal direction of the rectangular resistance metal plate 12B as shown in FIG. 10( b ), and are located on both sides in the width direction. In addition, not limited thereto, the positioning mark 15 may be provided only on one side in the width direction, or may be provided at the rear end or center of the resistance metal plate 12B in the longitudinal direction.
如图11的(a)~图11的(c)所示,在接下来的电阻金属板厚度测量工序(步骤S22)中,通过板厚测量装置(省略图示)测量用于形成多个(图中示例为7个)保护膜13A、13B(用假想线(单点划线)表示)的电阻金属板12B的宽度方向(图11的(b)的左右方向)的各位置处的厚度T1、T2、T3、T4、T5、T6、T7。以定位标记15为基准设定用于测量所述板厚的电阻金属板12B的宽度方向的各位置。As shown in Fig. 11(a) to Fig. 11(c), in the next resistance metal plate thickness measurement process (step S22), a plate thickness measuring device (not shown) is used to measure the resistance metal plate used to form a plurality of ( The thickness T at each position of the resistance metal plate 12B in the width direction (left and right direction of FIG. 1 , T2, T3 , T4 , T5 , T6 , T7 . Each position in the width direction of the resistance metal plate 12B for measuring the plate thickness is set with reference to the positioning mark 15 .
另外,在图示例子中,针对各保护膜13A、13B,在用于测量板厚的电阻金属板12B的宽度方向的各位置分别设定一处测量板厚的位置,但是不限于此。例如,可以分别针对各保护膜13A、13B,在用于测量板厚的电阻金属板12B的宽度方向的各位置分别设定多处测量板厚的位置,并将在所述多个部位处测量到的电阻金属板12B的厚度的平均值,作为电阻金属板12B的宽度方向的各位置处的厚度T1、T2、T3、T4、T5、T6、T7。In the illustrated example, one position for measuring the plate thickness is set at each position in the width direction of the resistance metal plate 12B for measuring the plate thickness for each of the protective films 13A and 13B, but the present invention is not limited thereto. For example, for each of the protective films 13A and 13B, a plurality of positions for measuring the thickness of the plate can be set at each position in the width direction of the resistance metal plate 12B used for measuring the plate thickness, and the position measured at the plurality of positions The average value of the thickness of the resistive metal plate 12B is taken as the thickness T 1 , T 2 , T 3 , T 4 , T 5 , T 6 , and T 7 at each position in the width direction of the resistive metal plate 12B.
如图12的(a)~图12的(c)所示,在接下来的保护膜形成工序(步骤S23)中,利用丝网印刷法或光刻法等,在电阻金属板12B的表面12B-1和背面12B-2分别形成多个(图中示例为7个)保护膜13A、13B。所述保护膜13A、13B在电阻金属板12B的长度方向上延伸、且在电阻金属板12B的宽度方向上相互平行。另外,以定位标记15为基准设定形成保护膜13A、13B的位置。As shown in Fig. 12(a) to Fig. 12(c), in the next protective film forming process (step S23), the surface 12B of the resistance metal plate 12B is formed by screen printing or photolithography. - 1 and the rear surface 12B- 2 are formed with a plurality of (seven in the figure as an example) protective films 13A, 13B, respectively. The protective films 13A and 13B extend in the longitudinal direction of the resistance metal plate 12B and are parallel to each other in the width direction of the resistance metal plate 12B. In addition, the positions where the protective films 13A and 13B are formed are set with reference to the positioning marks 15 .
此外,在本保护膜形成工序中,根据在前述的电阻金属板厚度测量工序(步骤S22)中测量到的电阻金属板12B的宽度方向的各位置处的厚度T1、T2、T3、T4、T5、T6、T7,设定多个保护膜13A、13B各自的宽度(即芯片电阻器1的保护膜3a、3b的长度)L21、L22、L23、L24、L25、L26、L27。具体地说,根据下述的公式(4),计算出各保护膜13A、13B的宽度L21、L22、L23、L24、L25、L26、L27。公式(4)是通过将公式(3)的变形得到的。In addition, in this protective film forming step, based on the thicknesses T 1 , T 2 , T 3 , T 4 , T 5 , T 6 , T 7 set the respective widths of the plurality of protective films 13A, 13B (that is, the lengths of the protective films 3a, 3b of the chip resistor 1) L2 1 , L2 2 , L2 3 , L2 4 , L2 5 , L2 6 , L2 7 . Specifically, the widths L2 1 , L2 2 , L2 3 , L2 4 , L2 5 , L2 6 , and L2 7 of the protective films 13A, 13B are calculated according to the following formula (4). Formula (4) is obtained by transforming formula (3).
[数学式2][mathematical formula 2]
在公式(3)、公式(4)中,R表示芯片电阻器1的电阻值(目标电阻值),L2表示芯片电阻器1的保护膜3a、3b的长度(即电阻金属板2的被保护膜3a、3b覆盖部分的长度),W表示芯片电阻器1的宽度(目标值)(即电阻金属板2的宽度),Tn表示电阻金属板2的厚度,ρ表示电阻金属板2的体积电阻率。即,芯片电阻器1的电阻值R由电阻金属板2的被保护膜3a、3b覆盖部分的宽度W、长度L2、厚度Tn(L2/(W×Tn))以及电阻金属板2的体积电阻率ρ决定。In formula (3) and formula (4), R represents the resistance value (target resistance value) of the chip resistor 1, and L2 represents the length of the protective film 3a, 3b of the chip resistor 1 (that is, the protected resistance of the resistance metal plate 2). film 3a, 3b covers the length), W represents the width (target value) of the chip resistor 1 (that is, the width of the resistance metal plate 2), T n represents the thickness of the resistance metal plate 2, ρ represents the volume of the resistance metal plate 2 resistivity. That is, the resistance value R of the chip resistor 1 is the width W, the length L2, the thickness T n (L2/(W×T n )) of the part covered by the protective films 3a and 3b of the resistance metal plate 2 and the resistance value of the resistance metal plate 2. Determined by the volume resistivity ρ.
由于电阻值R(目标电阻值)、由单片切断工序(步骤26)决定的宽度W(目标值)和体积电阻率ρ为已知,并且厚度Tn(即电阻金属板12B的宽度方向的各位置处的厚度T1、T2、T3、T4、T5、T6、T7)也在前述的电阻金属板厚度测量工序(步骤S22)中测量后为已知,所以能够使用所述值并根据所述的公式(4),计算出与电阻金属板12B的宽度方向的各位置处的厚度T1、T2、T3、T4、T5、T6、T7对应的、各保护膜13A、13B的宽度(即芯片电阻器1上的保护膜3a、3b的长度)L21、L22、L23、L24、L25、L26、L27。Since the resistance value R (target resistance value), the width W (target value) determined by the single-piece cutting process (step 26) and the volume resistivity ρ are known, and the thickness Tn (that is , the width direction of the resistance metal plate 12B Thickness T 1 , T 2 , T 3 , T 4 , T 5 , T 6 , T 7 ) at each position is also known after being measured in the aforementioned resistance metal plate thickness measurement process (step S22), so it can be used Described value and according to described formula (4), calculate and correspond to the thickness T 1 , T 2 , T 3 , T 4 , T 5 , T 6 , T 7 at each position in the width direction of the resistance metal plate 12B The widths of the protective films 13A, 13B (that is, the lengths of the protective films 3a, 3b on the chip resistor 1) L2 1 , L2 2 , L2 3 , L2 4 , L2 5 , L2 6 , L2 7 .
计算出各保护膜13A、13B的宽度L21、L22、L23、L24、L25、L26、L27后,设定与所述计算值对应的丝网图案,并基于所述丝网图案实施丝网印刷法,由此在电阻金属板12B的表面12B-1和背面12B-2上印刷环氧系树脂的浆料,并且通过对所述丝网印刷后的浆料进行烧结,形成各保护膜13A、13B。当然,当使用光刻法等时,也设定与各保护膜13A、13B的宽度L21、L22、L23、L24、L25、L26、L27的计算值对应的图案,并形成各保护膜13A、13B。After calculating the width L2 1 , L2 2 , L2 3 , L2 4 , L2 5 , L2 6 , L2 7 of each protective film 13A, 13B, set the screen pattern corresponding to the calculated value, and based on the screen The screen printing method is implemented for the mesh pattern, whereby epoxy-based resin paste is printed on the surface 12B-1 and the back surface 12B-2 of the resistance metal plate 12B, and by sintering the screen-printed paste, The respective protective films 13A, 13B are formed. Of course, when photolithography or the like is used, patterns corresponding to the calculated values of the widths L2 1 , L2 2 , L2 3 , L2 4 , L2 5 , L2 6 , and L2 7 of the respective protective films 13A, 13B are set, and The respective protective films 13A, 13B are formed.
如图13的(a)~图13的(b)所示,在接下来的长条状切断工序(步骤S24)中,通过利用激光、电火花线切割机、切刀等切断装置将电阻金属板12B在单点划线(假想线)所示的切断位置M1切断,切取多个(图中示例为7个)长条状部17。图13的(b)放大表示了从电阻金属板12B切取的多个长条状部17中的一个,图13的(c)放大表示了这个长条状部17的截面。图13的(b)表示了长条状部17的电阻金属板12B的宽度L3(芯片电阻器1的电阻金属板2的长度L3)、以及长条状部17的保护膜13A、13B的宽度L2(芯片电阻器1中保护膜3a、3b的长度L2)。As shown in Figure 13(a) to Figure 13(b), in the next elongated cutting process (step S24), the resistance metal The plate 12B is cut at a cutting position M1 indicated by a dashed-dotted line (imaginary line), and a plurality of (seven in the figure, for example) elongated portions 17 are cut out. (b) of FIG. 13 shows enlarged one of the plurality of elongated portions 17 cut out from the resistance metal plate 12B, and (c) of FIG. 13 shows an enlarged cross section of this elongated portion 17 . (b) of FIG. 13 shows the width L3 of the resistance metal plate 12B of the elongated portion 17 (the length L3 of the resistance metal plate 2 of the chip resistor 1 ), and the widths of the protective films 13A, 13B of the elongated portion 17. L2 (the length L2 of the protective films 3a, 3b in the chip resistor 1).
如图13的(a)所示,切断位置(切割线)M1在电阻金属板12B的长度方向(图12的(b)的上下方向)上延伸,并且设定在电阻金属板12B的宽度方向(图12的(b)的左右方向)上邻接的保护膜3A、3B之间(即表面12B-1侧的保护膜13A、13A之间和背面12B-2侧的保护膜13B、13B之间)以及位于电阻金属板12B的宽度方向两侧的保护膜13A、13B的外侧(即表面12B-1侧的宽度方向两侧的保护膜13A的外侧和背面12B-2侧的宽度方向两侧的保护膜13B的外侧)。以定位标记15为基准设定所述切断位置(切割线)M1,使得长条状部17的电阻金属板12B的宽度L3成为规定值。另外,通过适当调整激光、电火花线切割机、切刀等切断装置的切断宽度(即由激光束的宽度、线的粗细、切刀刃的厚度等决定的切断位置(切割线)M1的宽度),也可以调整长条状部17的电阻金属板12B的宽度L3。As shown in (a) of FIG. 13 , the cutting position (cutting line) M1 extends in the longitudinal direction of the resistance metal plate 12B (the vertical direction of FIG. 12( b )), and is set in the width direction of the resistance metal plate 12B. (the left-right direction of (b) of FIG. 12 ) between the adjacent protective films 3A and 3B (that is, between the protective films 13A and 13A on the front surface 12B-1 side and between the protective films 13B and 13B on the back surface 12B-2 side) ) and the outer sides of the protective films 13A and 13B located on both sides in the width direction of the resistance metal plate 12B (that is, the outer sides of the protective film 13A on both sides in the width direction on the surface 12B-1 side and on both sides in the width direction on the back side 12B-2 side outside of the protective film 13B). The cutting position (cutting line) M1 is set with reference to the positioning mark 15 so that the width L3 of the resistance metal plate 12B of the elongated portion 17 becomes a predetermined value. In addition, by properly adjusting the cutting width of cutting devices such as lasers, wire electric discharge machines, and cutters (that is, the width of the cutting position (cutting line) M1 determined by the width of the laser beam, the thickness of the line, and the thickness of the cutting blade, etc.) , the width L3 of the resistance metal plate 12B of the elongated portion 17 can also be adjusted.
如图13的(b)、图13的(c)和图14的(a)、图14的(b)所示,在接下来的电极镀膜形成工序(步骤S25)中,对于长条状部17,针对未形成保护膜13A、13B而露出的电阻金属板12B的宽度方向(图13的(b)的左右方向)的两端部12B-3、12B-4的表面,通过电镀法形成电极镀膜14A、14B。另外,此时未形成保护膜13A、13B的长条状部17的长度方向的两端部,也形成镀膜14C、14D。作为电极镀膜14A、14B,形成例如镍镀膜和锡镀膜。此外,电极镀膜14A、14B也可以是通过依次进行冲击镀镍、镀铜、镀镍、镀锡膜而形成的镀膜。As shown in (b) of FIG. 13, (c) of FIG. 13 and (a) of FIG. 14, (b) of FIG. 17. For the surfaces of both ends 12B-3, 12B-4 of the resistance metal plate 12B exposed in the width direction (the left-right direction of FIG. 13(b)) without forming the protective films 13A, 13B, electrodes are formed by electroplating. Coated films 14A, 14B. In addition, at this time, the plating films 14C and 14D are also formed at both ends in the longitudinal direction of the elongated portion 17 where the protective films 13A and 13B are not formed. As the electrode plating films 14A, 14B, nickel plating films and tin plating films are formed, for example. In addition, the electrode plating films 14A and 14B may be plated films formed by sequentially performing strike nickel plating, copper plating, nickel plating, and tin plating.
如图15的(a)所示,在接下来的单片切断工序(步骤S26)中,利用激光、电火花线切割机、切刀等切断装置将长条状部17在用单点划线(假想线)所示的切断位置N1切断为多个(在图示的例子中为12个)单片。这样,制造出图15的(b)所示的金属板低电阻芯片电阻器1。即,通过将长条状部17切断为多个单片,从长条状部17的电阻金属板12B、保护膜13A、13B及电极镀膜14A、14B,分别形成芯片电阻器1的电阻金属板2、保护膜3a、3b及电极镀膜4a、4b。As shown in (a) of FIG. 15 , in the next single-piece cutting process (step S26), the elongated portion 17 is cut by a single-dot chain line using a cutting device such as a laser, a wire electric discharge machine, or a cutter The cutting position N1 shown by the (imaginary line) cuts into a plurality (12 pieces in the illustrated example) of individual pieces. In this way, the metal plate low-resistance chip resistor 1 shown in (b) of FIG. 15 is manufactured. That is, by cutting the elongated portion 17 into a plurality of individual pieces, the resistance metal plates of the chip resistor 1 are respectively formed from the resistance metal plate 12B, the protective films 13A, 13B, and the electrode plating films 14A, 14B of the elongated portion 17. 2. Protective films 3a, 3b and electrode coatings 4a, 4b.
关于长条状部17的尺寸与芯片电阻器1的尺寸的对应关系,长条状部17的电阻金属板12B和电极镀膜14B、14B的宽度L1相当于芯片电阻器1的全长L1,长条状部17的电极镀膜14A、14B的宽度C相当于芯片电阻器1中电极镀膜4a、4b的长度C,长条状部17的保护膜13A、13B的宽度L2相当于芯片电阻器1的保护膜3a、3b的长度L2,长条状部17的电阻金属板12B的宽度L3相当于芯片电阻器1的电阻金属板2的长度L3。Regarding the corresponding relationship between the size of the elongated portion 17 and the size of the chip resistor 1, the width L1 of the resistance metal plate 12B and the electrode plating films 14B, 14B of the elongated portion 17 is equivalent to the entire length L1 of the chip resistor 1, and the length L1 is equal to the length L1 of the chip resistor 1. The width C of the electrode plating films 14A, 14B of the strip portion 17 is equivalent to the length C of the electrode plating films 4a, 4b in the chip resistor 1, and the width L2 of the protective films 13A, 13B of the elongated portion 17 is equivalent to the length C of the chip resistor 1. The length L2 of the protective films 3 a and 3 b and the width L3 of the resistance metal plate 12B of the elongated portion 17 correspond to the length L3 of the resistance metal plate 2 of the chip resistor 1 .
另外,针对从带状的电阻金属板12A依次切取的矩形的电阻金属板12B的任何一个,实施所述的包含电阻金属板厚度测量工序的芯片电阻器的制造工序。这是因为,在带状的电阻金属板12A的长度方向上有时也会产生厚度不均,此时每个电阻金属板12B在宽度方向上的厚度不均都不同。另外,当带状的电阻金属板12A的长度方向上基本不存在厚度不均时,也可以仅针对从带状的电阻金属板12A最初切取的矩形的电阻金属板12B实施厚度测量并决定保护膜13A、13B的宽度,并且将所述保护膜13A、13B的宽度应用于从带状的电阻金属板12A切取的第二个以后的矩形的电阻金属板12B上形成的保护膜13A、13B。In addition, the above-described manufacturing process of the chip resistor including the resistance metal plate thickness measurement step is implemented for any of the rectangular resistance metal plates 12B sequentially cut out from the strip-shaped resistance metal plate 12A. This is because thickness unevenness may also occur in the longitudinal direction of the strip-shaped resistance metal plate 12A, and in this case, the thickness unevenness in the width direction of each resistance metal plate 12B is different. In addition, when there is substantially no thickness unevenness in the longitudinal direction of the strip-shaped resistance metal plate 12A, it is also possible to measure the thickness of the rectangular resistance metal plate 12B initially cut from the strip-shaped resistance metal plate 12A and determine the protective film. 13A, 13B, and apply the width of the protective films 13A, 13B to the protective films 13A, 13B formed on the second and subsequent rectangular resistive metal plates 12B cut from the strip-shaped resistive metal plate 12A.
如上所述,在另一实施方式的金属板低电阻芯片电阻器的制造方法中,也可以得到与所述实施方式的金属板低电阻芯片电阻器的制造方法相同的效果。As described above, also in the manufacturing method of the metal plate low-resistance chip resistor of another embodiment, the same effects as those of the manufacturing method of the metal plate low-resistance chip resistor of the above-mentioned embodiment can be obtained.
即,按照本发明另一实施方式的金属板低电阻芯片电阻器的制造方法,其是使用矩形的电阻金属板12B的芯片电阻器1的制造方法,通过依次实施下述工序来制造芯片电阻器1:保护膜形成工序(步骤S23),分别针对电阻金属板12B的表面12B-1和背面12B-2,在电阻金属板12B的宽度方向上形成多个保护膜13A、13B,并且多个保护膜13A、13B在电阻金属板12的长度方向上延伸;长条状切断工序(步骤S24),通过在切断位置M1处切断电阻金属板12B,切取具有比保护膜13A、13B更宽的宽度且在电阻金属板12B的长度方向上延伸的多个长条状部17,切断位置M1分别在所述宽度方向上邻接的保护膜13A、13B之间和位于所述宽度方向两侧的保护膜13A、13B的外侧沿电阻金属板12B的长度方向延伸;电极镀膜形成工序(步骤S25),针对未形成有保护膜13A、13B且露出有电阻金属板12B的、长条状部17的宽度方向的两端部12B-3、12B-4的表面,形成电极镀膜14A、14B;以及单片切断工序(步骤S26),将长条状部17切断为多个单片,因此先于切取长条状部17形成保护膜13A、13B。That is, the method of manufacturing a metal plate low-resistance chip resistor according to another embodiment of the present invention is a method of manufacturing a chip resistor 1 using a rectangular resistance metal plate 12B, and the chip resistor is manufactured by sequentially implementing the following steps 1: Protective film forming process (step S23), respectively for the surface 12B-1 and the back surface 12B-2 of the resistance metal plate 12B, form a plurality of protection films 13A, 13B in the width direction of the resistance metal plate 12B, and a plurality of protection films The films 13A, 13B extend in the longitudinal direction of the resistance metal plate 12; the elongated cutting process (step S24), by cutting the resistance metal plate 12B at the cutting position M1, cuts have a width wider than the protection films 13A, 13B and For the plurality of elongated portions 17 extending in the longitudinal direction of the resistance metal plate 12B, the cutting positions M1 are respectively between the protective films 13A and 13B adjacent in the width direction and the protective films 13A located on both sides of the width direction. , 13B along the length direction of the resistance metal plate 12B; The surfaces of both end portions 12B-3, 12B-4 are formed with electrode coatings 14A, 14B; and the single-piece cutting process (step S26), the strip-shaped portion 17 is cut into a plurality of single pieces, so prior to cutting the strip-shaped Protective films 13A and 13B are formed on the portion 17 .
因此,即使在例如要求芯片电阻器1进一步小型化、长条状部17的电阻金属板12B的宽度L3变得更窄时,也可以不受所述长条状部17的电阻金属板12B的宽度L3的影响地容易地形成保护膜13A、13B。即,能容易地通过丝网印刷法或光刻法等形成保护膜13A、13B。Therefore, even when the chip resistor 1 is required to be further miniaturized and the width L3 of the resistance metal plate 12B of the elongated portion 17 becomes narrower, for example, it is not affected by the resistance metal plate 12B of the elongated portion 17. The protective films 13A, 13B are easily formed due to the influence of the width L3. That is, the protective films 13A, 13B can be easily formed by a screen printing method, a photolithography method, or the like.
此外,还能扩大保护膜13A、13B的宽度(芯片电阻器1的保护膜3a、3b的长度)L2的调整的允许范围(参照图8)。In addition, the allowable range of adjustment of the width L2 of the protective films 13A and 13B (length of the protective films 3 a and 3 b of the chip resistor 1 ) can be expanded (see FIG. 8 ).
此外,按照本发明另一实施方式的金属板低电阻芯片电阻器的制造方法,由于在保护膜形成工序(步骤S23)之前实施电阻金属板厚度测量工序(步骤S22),在电阻金属板厚度测量工序中测量形成多个保护膜13A、13B的电阻金属板12B的宽度方向的各位置处的厚度T1、T2、T3、T4、T5、T6、T7,在保护膜形成工序(步骤S23)中,根据在电阻金属板厚度测量工序(步骤S22)中测量到的电阻金属板12B的宽度方向的各位置处的厚度T1、T2、T3、T4、T5、T6、T7,分别设定多个保护膜13A、13B的宽度L21、L22、L23、L24、L25、L26、L27,因此还可以根据电阻金属板12B的宽度方向的厚度不均来调整保护膜13A、13B的宽度(芯片电阻器1的保护膜3a、3b的长度)。因此,可以降低因电阻金属板12B的宽度方向的厚度不均带来的芯片电阻器1的电阻值的不均。In addition, according to the method of manufacturing a metal plate low-resistance chip resistor according to another embodiment of the present invention, since the resistive metal plate thickness measurement process (step S22) is performed before the protective film forming process (step S23), the resistive metal plate thickness measurement step In the process, the thicknesses T 1 , T 2 , T 3 , T 4 , T 5 , T 6 , and T 7 at each position in the width direction of the resistance metal plate 12B forming a plurality of protective films 13A, 13B are measured, In the process (step S23), the thicknesses T 1 , T 2 , T 3 , T 4 , and T 5 at each position in the width direction of the resistance metal plate 12B measured in the resistance metal plate thickness measurement process (step S22 ) , T 6 , T 7 set the width L2 1 , L2 2 , L2 3 , L2 4 , L2 5 , L2 6 , L2 7 of a plurality of protective films 13A, 13B respectively, so it can also be based on the width of the resistance metal plate 12B The width of the protective films 13A and 13B (the length of the protective films 3 a and 3 b of the chip resistor 1 ) is adjusted according to the thickness variation in the direction. Therefore, the variation in the resistance value of the chip resistor 1 due to the thickness variation in the width direction of the resistance metal plate 12B can be reduced.
另外,在所述的金属板低电阻芯片电阻器的制造方法中,从带状的电阻金属板12A切取矩形的电阻金属板12B,并针对所述矩形的电阻金属板12B形成保护膜13A、13B,然后切取长条状部17,但是不限于此。即,也可以不切取矩形的电阻金属板12B,在针对带状的电阻金属板12A形成保护膜13A、13B后,切取长条状部17。In addition, in the manufacturing method of the metal plate low-resistance chip resistor described above, the rectangular resistance metal plate 12B is cut out from the strip-shaped resistance metal plate 12A, and the protective films 13A, 13B are formed on the rectangular resistance metal plate 12B. , and then cut the elongated portion 17, but not limited thereto. That is, instead of cutting out the rectangular resistance metal plate 12B, the elongated portion 17 may be cut out after forming the protective films 13A and 13B on the strip-shaped resistance metal plate 12A.
工业实用性Industrial Applicability
本发明涉及使用电阻金属板的芯片电阻器的制造方法,特别适合用于芯片电阻器的制造过程中的长条状部的电阻金属板的宽度非常狭窄的情况。The present invention relates to a method of manufacturing a chip resistor using a resistance metal plate, and is particularly suitable for use when the width of the resistance metal plate in the elongated portion is very narrow in the manufacturing process of the chip resistor.
附图标记说明Explanation of reference signs
1金属板低电阻芯片电阻器,2电阻金属板,2A带状的电阻金属板,2B矩形的电阻金属板,2B-1表面,2B-2背面,2B-3、2B-4端部,2B-5侧面,2a表面,2a-1、2a-2端部,2b背面,2b-1、2b-2端部,2c、2d端面,2e、2f端部,3a、3b保护膜,3A、3B保护膜,4a、4b电极镀膜,4A、4B电极镀膜,4C镀膜,5定位标记,6狭缝,7长条状部,8连接部,12A带状的电阻金属板,12B矩形的电阻金属板,12B-1表面,12B-2背面,12B-3、12B-4端部,14A、14B电极镀膜,14C、14D镀膜,15定位标记,17长条状部。1 metal plate low resistance chip resistor, 2 resistance metal plate, 2A strip resistance metal plate, 2B rectangular resistance metal plate, 2B-1 surface, 2B-2 back, 2B-3, 2B-4 end, 2B -5 side, 2a surface, 2a-1, 2a-2 end, 2b back, 2b-1, 2b-2 end, 2c, 2d end, 2e, 2f end, 3a, 3b protective film, 3A, 3B Protective film, 4a, 4b electrode coating, 4A, 4B electrode coating, 4C coating, 5 positioning mark, 6 slit, 7 strip-shaped part, 8 connecting part, 12A strip-shaped resistance metal plate, 12B rectangular resistance metal plate , 12B-1 surface, 12B-2 back, 12B-3, 12B-4 ends, 14A, 14B electrode coating, 14C, 14D coating, 15 positioning marks, 17 strips.
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
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| PCT/JP2010/066313 WO2012039020A1 (en) | 2010-09-21 | 2010-09-21 | Method for producing metal plate low-resistance chip resistor |
| JPPCT/JP2010/066313 | 2010-09-21 | ||
| PCT/JP2011/064966 WO2012039175A1 (en) | 2010-09-21 | 2011-06-29 | Method for producing metal plate low-resistance chip resistor |
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| CN103201801B true CN103201801B (en) | 2016-03-30 |
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| TWI718971B (en) * | 2020-07-07 | 2021-02-11 | 旺詮股份有限公司 | Manufacturing method for mass production of miniature resistance elements |
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| CN1524274A (en) * | 2002-06-19 | 2004-08-25 | 罗姆股份有限公司 | Low-resistance chip resistor and manufacturing method thereof |
| CN101465184A (en) * | 2007-12-17 | 2009-06-24 | 罗姆股份有限公司 | Chip resistor and method of making the same |
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| JP4542967B2 (en) * | 2005-08-12 | 2010-09-15 | ローム株式会社 | Manufacturing method of chip resistor |
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- 2010-09-21 WO PCT/JP2010/066313 patent/WO2012039020A1/en not_active Ceased
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2011
- 2011-06-29 WO PCT/JP2011/064966 patent/WO2012039175A1/en not_active Ceased
- 2011-06-29 CN CN201180045471.9A patent/CN103201801B/en active Active
- 2011-06-29 JP JP2012516242A patent/JPWO2012039175A1/en active Pending
- 2011-06-29 KR KR1020137007074A patent/KR101435351B1/en active Active
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| CN1433030A (en) * | 2002-01-14 | 2003-07-30 | 陈富强 | Manufacturing Method and Structure of Metal Plate Resistor |
| CN1524274A (en) * | 2002-06-19 | 2004-08-25 | 罗姆股份有限公司 | Low-resistance chip resistor and manufacturing method thereof |
| CN101523523A (en) * | 2006-08-10 | 2009-09-02 | 釜屋电机株式会社 | Manufacturing method of rectangular plate type chip resistor and rectangular plate type chip resistor |
| CN101465184A (en) * | 2007-12-17 | 2009-06-24 | 罗姆股份有限公司 | Chip resistor and method of making the same |
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| Publication number | Publication date |
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| TWI433170B (en) | 2014-04-01 |
| JPWO2012039175A1 (en) | 2014-02-03 |
| CN103201801A (en) | 2013-07-10 |
| WO2012039020A1 (en) | 2012-03-29 |
| KR20130073951A (en) | 2013-07-03 |
| KR101435351B1 (en) | 2014-08-27 |
| TW201230081A (en) | 2012-07-16 |
| WO2012039175A1 (en) | 2012-03-29 |
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