CN103165187A - 数据读出装置 - Google Patents
数据读出装置 Download PDFInfo
- Publication number
- CN103165187A CN103165187A CN201210521365XA CN201210521365A CN103165187A CN 103165187 A CN103165187 A CN 103165187A CN 201210521365X A CN201210521365X A CN 201210521365XA CN 201210521365 A CN201210521365 A CN 201210521365A CN 103165187 A CN103165187 A CN 103165187A
- Authority
- CN
- China
- Prior art keywords
- circuit
- output signal
- read output
- signal
- data reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003068 static effect Effects 0.000 claims abstract description 12
- 230000010355 oscillation Effects 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 2
- 230000001934 delay Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract 2
- 230000003111 delayed effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003578 releasing effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Read Only Memory (AREA)
- Engineering & Computer Science (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Databases & Information Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011268876A JP5856461B2 (ja) | 2011-12-08 | 2011-12-08 | データ読出装置 |
| JP2011-268876 | 2011-12-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103165187A true CN103165187A (zh) | 2013-06-19 |
| CN103165187B CN103165187B (zh) | 2016-12-21 |
Family
ID=48571879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210521365.XA Active CN103165187B (zh) | 2011-12-08 | 2012-12-07 | 数据读出装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9030892B2 (zh) |
| JP (1) | JP5856461B2 (zh) |
| KR (1) | KR101737142B1 (zh) |
| CN (1) | CN103165187B (zh) |
| TW (1) | TWI576848B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6309258B2 (ja) * | 2013-12-09 | 2018-04-11 | エイブリック株式会社 | データ読出装置及び半導体装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6144230A (en) * | 1998-05-25 | 2000-11-07 | Hyundai Electronics Industries Co., Ltd. | Sense amplifier driving device |
| JP2004165872A (ja) * | 2002-11-12 | 2004-06-10 | Citizen Watch Co Ltd | 発振停止検出装置 |
| CN1773627A (zh) * | 2004-11-08 | 2006-05-17 | 海力士半导体有限公司 | 半导体存储装置的内部电压产生器 |
| CN102227776A (zh) * | 2008-12-08 | 2011-10-26 | 高通股份有限公司 | 用于读出放大器的可数字控制延迟 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3730381B2 (ja) * | 1997-10-21 | 2006-01-05 | 株式会社東芝 | 半導体記憶装置 |
| JP4252344B2 (ja) | 2003-03-27 | 2009-04-08 | シチズンホールディングス株式会社 | 電子時計回路 |
| KR100660899B1 (ko) * | 2005-12-15 | 2006-12-26 | 삼성전자주식회사 | 누설 전류 패스를 제거할 수 있는 퓨즈 회로 |
| KR100852179B1 (ko) * | 2006-12-27 | 2008-08-13 | 삼성전자주식회사 | 퓨즈 회로를 가지는 비휘발성 반도체 메모리 장치 및 그제어방법 |
| JP5437658B2 (ja) | 2009-02-18 | 2014-03-12 | セイコーインスツル株式会社 | データ読出回路及び半導体記憶装置 |
-
2011
- 2011-12-08 JP JP2011268876A patent/JP5856461B2/ja active Active
-
2012
- 2012-10-30 US US13/663,952 patent/US9030892B2/en active Active
- 2012-11-22 TW TW101143740A patent/TWI576848B/zh not_active IP Right Cessation
- 2012-12-03 KR KR1020120138960A patent/KR101737142B1/ko not_active Expired - Fee Related
- 2012-12-07 CN CN201210521365.XA patent/CN103165187B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6144230A (en) * | 1998-05-25 | 2000-11-07 | Hyundai Electronics Industries Co., Ltd. | Sense amplifier driving device |
| JP2004165872A (ja) * | 2002-11-12 | 2004-06-10 | Citizen Watch Co Ltd | 発振停止検出装置 |
| CN1773627A (zh) * | 2004-11-08 | 2006-05-17 | 海力士半导体有限公司 | 半导体存储装置的内部电压产生器 |
| CN102227776A (zh) * | 2008-12-08 | 2011-10-26 | 高通股份有限公司 | 用于读出放大器的可数字控制延迟 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130064694A (ko) | 2013-06-18 |
| US20130148444A1 (en) | 2013-06-13 |
| US9030892B2 (en) | 2015-05-12 |
| JP5856461B2 (ja) | 2016-02-09 |
| TWI576848B (zh) | 2017-04-01 |
| CN103165187B (zh) | 2016-12-21 |
| JP2013120613A (ja) | 2013-06-17 |
| KR101737142B1 (ko) | 2017-05-17 |
| TW201331944A (zh) | 2013-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1182215 Country of ref document: HK |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160304 Address after: Chiba County, Japan Applicant after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba, Chiba, Japan Applicant before: Seiko Instruments Inc. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: Nagano Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: ABLIC Inc. |