CN102800813A - Organic electroluminescence device and manufacturing method thereof - Google Patents
Organic electroluminescence device and manufacturing method thereof Download PDFInfo
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- 238000005401 electroluminescence Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 33
- 239000011159 matrix material Substances 0.000 claims abstract 6
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 41
- 239000011248 coating agent Substances 0.000 claims description 40
- 238000000576 coating method Methods 0.000 claims description 40
- 230000000903 blocking effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 3
- 150000004706 metal oxides Chemical class 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 239000011149 active material Substances 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000002788 crimping Methods 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 150000002910 rare earth metals Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 55
- 239000003086 colorant Substances 0.000 abstract 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 31
- 239000002019 doping agent Substances 0.000 description 29
- 229910052741 iridium Inorganic materials 0.000 description 26
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 23
- 229910001316 Ag alloy Inorganic materials 0.000 description 22
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 22
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 21
- 239000011777 magnesium Substances 0.000 description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 20
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 19
- 238000002161 passivation Methods 0.000 description 19
- 238000001259 photo etching Methods 0.000 description 17
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 15
- 239000004305 biphenyl Substances 0.000 description 11
- 235000010290 biphenyl Nutrition 0.000 description 11
- LPCWDYWZIWDTCV-UHFFFAOYSA-N 1-phenylisoquinoline Chemical compound C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 LPCWDYWZIWDTCV-UHFFFAOYSA-N 0.000 description 10
- JZRYQZJSTWVBBD-UHFFFAOYSA-N pentaporphyrin i Chemical compound N1C(C=C2NC(=CC3=NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 JZRYQZJSTWVBBD-UHFFFAOYSA-N 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- 238000000926 separation method Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 5
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910000583 Nd alloy Inorganic materials 0.000 description 4
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- -1 4,6-difluorophenyl Chemical group 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 3
- ZLZHPHUXJVYXTD-UHFFFAOYSA-N NCC=1C=C(C=CC1)C1=C(C=CC(=C1)N)C1=CC=C(C=C1)N Chemical class NCC=1C=C(C=CC1)C1=C(C=CC(=C1)N)C1=CC=C(C=C1)N ZLZHPHUXJVYXTD-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical compound [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 1
- USGICQHVMVTCCE-UHFFFAOYSA-N 2-(3h-1-benzothiophen-3-id-2-yl)pyridine;iridium(3+) Chemical compound [Ir+3].N1=CC=CC=C1C1=[C-]C2=CC=CC=C2S1.N1=CC=CC=C1C1=[C-]C2=CC=CC=C2S1.N1=CC=CC=C1C1=[C-]C2=CC=CC=C2S1 USGICQHVMVTCCE-UHFFFAOYSA-N 0.000 description 1
- 150000005360 2-phenylpyridines Chemical class 0.000 description 1
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- ZNJRONVKWRHYBF-VOTSOKGWSA-N 4-(dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4h-pyran Chemical compound O1C(C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(CCCN2CCC3)=C2C3=C1 ZNJRONVKWRHYBF-VOTSOKGWSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- UNRQTHVKJQUDDF-UHFFFAOYSA-N acetylpyruvic acid Chemical compound CC(=O)CC(=O)C(O)=O UNRQTHVKJQUDDF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 1
- RTRAMYYYHJZWQK-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1 RTRAMYYYHJZWQK-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- YKZHNHRLNBPFBZ-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]benzo[a]anthracen-1-amine Chemical class C1=CC(N)=CC=C1C(C=C1)=CC=C1NC1=CC=CC2=CC=C(C=C3C(C=CC=C3)=C3)C3=C12 YKZHNHRLNBPFBZ-UHFFFAOYSA-N 0.000 description 1
- BLFVVZKSHYCRDR-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-2-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-2-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C=CC=CC2=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C3C=CC=CC3=CC=2)C=C1 BLFVVZKSHYCRDR-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention discloses an organic electroluminescence device for realizing full colors, wherein red, green and blue pixel area light-emitting devices for realizing the full colors have a common hole transmission layer; the red and green pixel area light-emitting devices have a common light-emitting layer, and then light of the commonly light-emitting layer respectively forms red light and green light through red and green film filters; and the blue light-emitting device in a blue pixel area uses the common hole transmission layer to emit blue light, and has no need of a blue film filter. In a manufacturing process of the organic electroluminescence device driven by an active matrix, the red and green pixel area devices use the common light-emitting layer, so that the requirement on the precision of a shadow mask can be reduced; and meanwhile, the red light and the green light are realized through the film filters so that the efficiencies of the red light and the green light can be reduced, but the efficiencies of red and green organic light-emitting materials in the common light-emitting layer are higher than the efficiency of a blue organic light-emitting material, so that the balance of the efficiencies of light with three colors can be realized better.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device and preparation method thereof, particularly realize organic electroluminescence device of full color and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) have self-luminous, color saturation height, power saving, visual angle wide, save advantages such as space, response speed be fast; Begin to get into the display terminal field of small-medium size, be considered to a kind of display panel technology of very possible replacement liquid crystal display (LCD).
Fig. 1 is that the organic electroluminescence device (OLED) of prior art adopts red, green, blue independence luminescent device method to realize the structural representation of full color.Comprising: substrate 100, transparency conductive electrode 101, passivation protection layer 102, common hole transmission layer 111, red light emitting layer 121, green light emitting layer 122, blue light-emitting layer 123, common metal electrode 131.Wherein, mutual separation of the transparency conductive electrode of each pixel and individual drive.
Fig. 1 a-Fig. 1 f is that the organic electroluminescence device (OLED) of prior art adopts red, green, blue discrete light-emitting device to realize the manufacture method of full color.Making step comprises:
(101) coated polymeric and photoetching form passivation protection layer 102 on discrete each other transparency conductive electrode 101, see Fig. 1 a;
(102) make common hole transmission layer 111, see Fig. 1 b;
(103) utilize mask plate 190 to make red light emitting layer 121, see Fig. 1 c; Move mask plate 190 and make green light emitting layer 122, see Fig. 1 d; Move mask plate 190 again and make blue light-emitting layer 123, see Fig. 1 e; The order of utilizing mask plate 190 to make these three colour light emitting layers can change;
Make common metal electrode 131, see Fig. 1 f.
Realize that with red, green, blue independence luminescent device method full color receives the restriction of mask plate aperture area, is difficult to realize high display resolution.
Fig. 2 is that the organic electroluminescence device (OLED) of prior art adopts white light emitting device to variegate the structural representation that filter coating (color filter) method realizes full color.Comprising: substrate 200, metal electrode 231, passivation protection layer 202, white-light emitting layer 224, transparency conductive electrode 201.Wherein, mutual separation of the metal electrode of each pixel and individual drive.Another substrate 250 is produced on the red filter coating 251 on the substrate 250, green filter film 252, blue filter coating 253.
Fig. 2 a-Fig. 2 f is that the organic electroluminescence device (OLED) of prior art adopts white light emitting device to variegate the manufacture method that filter coating (color filter) method realizes full color.Making step comprises:
(201) coated polymeric and photoetching form passivation protection layer 202 on discrete each other metal electrode 231, see Fig. 2 a;
(202) make white-light emitting layer 224, see Fig. 2 b;
(203) make transparency conductive electrode 201, see Fig. 2 c;
(204) on another substrate 250, make red filter coating 251, green filter film 252, blue filter coating 253 is seen Fig. 2 d.
(205) substrate 200 and substrate 250 correspondences are bonded together, see Fig. 2 e.White light passes through red filter coating 251, green filter film 252, and blue filter coating 253 forms red light, green light and blue light respectively.
This method is difficult to improve luminous efficiency owing to adopt color filter film.
Summary of the invention
The organic electroluminescence device and the manufacturing approach that the purpose of this invention is to provide a kind of high display resolution, high-luminous-efficiency.
For realizing above-mentioned purpose; The present invention proposes a kind of organic electroluminescence device structure that realizes full color; The red, green, blue three-colour light-emitting device of wherein realizing full color has common hole transmission layer, and red and green light emitting device has common luminescent layer, and the light of this common luminescent layer forms red light and green light respectively through red and green filter film more afterwards; Blueness utilizes common hole transmission layer to send blue light, and blue luminescent device does not need blue filter coating.In the manufacturing process of this organic electroluminescence device, red and green device can reduce requirement and then raising display resolution to mask plate (shadow mask) precision owing to adopt common luminescent layer; The common hole of blue luminescent device utilization, the blue light that electron transfer layer sends need not adopt mask plate to make separately, improved production efficiency, and blue light do not adopt filter coating can improve luminous efficiency and blue light colorimetric purity.Though red light and green light realize through filter coating simultaneously; Cause red light and green light efficient to decrease; But, can better realize the balance of the efficient of three kinds of color of light because the colour organic luminous material efficiency of efficient BELAND of redness in the common luminescent layer and green luminous organic material is high.
According to an aspect of the present invention, the common hole transport layer material that red, green, blue three-colour light-emitting device has can adopt and include, but are not limited to N, N '-diphenyl-N, N '-(1-naphthyl)-1; 1 '-biphenyl-4,4 '-diamines (a-NPB), N, N '-diphenyl-N, N '-two (2-naphthyl)-1; 1 '-biphenyl-4,4 '-diamines (β-NPB), N, N, N '; N '-tetraphenyl-1,1 '-biphenyl-4,4 '-diamines (TPB), N, N '-diphenyl-N; N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4, gathers fluorenes hole mobile materials such as (PF) at 4 '-diamines (TPD), the polymer that contains above-mentioned group, PVK (PVK).
According to an aspect of the present invention; Above-mentioned common hole transport layer material also can be used as the luminous object dopant material of main body doped, blue, blue-light-emitting object dopant material adopt include, but are not limited to two (4,6-difluorophenyl pyridine-N; C2) the pyridine formyl closes iridium (FIrpic); (OC-6-33)-two [3,5-two fluoro-2-(phenyl-KC of 2-pyridine radicals-KN)] [four (boric acid (the 1-)-KN2 of 1H-pyrazolyl-KN1), KN2 ']-iridium materials such as (FIr6).
According to an aspect of the present invention; Material of main part red and the common luminescent layer that green light emitting device has can adopt and include, but are not limited to 3-phenyl-4-(1 '-naphthyl)-5-phenyl-1,2,4-triazole (TAZ), 4; 4 '-two (9-carbazole) biphenyl (CBP), PVK (PVK), oxine aluminium (Alq3), two (2-methyl-oxine-N1; 08) aluminium (BAlq) etc.-(1,1 ,-biphenyl-4-hydroxyl).
According to an aspect of the present invention, the emitting red light object dopant material of the common luminescent layer that has of red and green light emitting device can adopt and include, but are not limited to 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin platinum (PtOEP), (Btp)
2Ir (acac), Ir (piq)
3, 4-(dimercapto methylene)-2-methyl-6-(to the dimethylamino styryl)-4H-pyrans (DCM), 4-(dicyano methylene)-[2-(2 for 2-methyl-6-; 3; 6; 7-tetrahydrochysene-1H, 5H-benzo [ij] quinolizine-9-yl) vinyl]-4H-pyrans (DCM2), DCJTB, directly gold-tinted material rubrene (Rubrene), Tris (2-(benzo [b] thiophen-2-yl) pyridine-Iridium (III) etc.
[24]According to an aspect of the present invention, the green emitting object dopant material of the common luminescent layer that has of red and green light emitting device can adopt and include, but are not limited to three (2-phenylpyridines) and close iridium (Ir (ppy)
3), acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy)
2Material such as (acac)).
According to an aspect of the present invention, electron transport material and hole barrier materials adopt and include, but are not limited to 2,9-dimethyl-4; 7-biphenyl-1; 10-phenanthrolene (BCP), oxine aluminium (Alq3), two (2-methyl-oxine-N1,08)-(1,1 '-biphenyl-4-hydroxyl) aluminium (BAlq), 1; 3,5-three (the benzene materials such as (TPBi) of 1-phenyl-1H-benzimidazolyl-2 radicals-yl).
For realizing above-mentioned purpose; The concrete device architecture that the present invention can also adopt; Promptly utilize red, green, blue, white luminous device to realize full color, realize that wherein the red, green, blue of full color and white luminous device have common hole transmission layer, redness, green and white luminous device have common luminescent layer; The light that sends of this common luminescent layer, common electron transfer layer forms red light and green light respectively through red, green filter film more afterwards; Filter coating need not be adopted in the white luminous device zone, and blueness utilizes common hole, electron transfer layer to send blue light, and blue luminescent device does not need blue filter coating.In the manufacturing process of this organic electroluminescence device, redness, green and white device can reduce requirement and then raising display resolution to mask plate (shadow mask) precision owing to adopt common luminescent layer; The common hole of blue luminescent device utilization, the blue light that electron transfer layer sends improved production efficiency, and blue light do not adopt filter coating can improve luminous efficiency and blue light colorimetric purity.
Redness, green and white luminous device have common luminescent layer can adopt above-mentioned redness, green and the blue-light-emitting object dopant material of material of main part doping.
Description of drawings
Fig. 1 is that the organic electroluminescence device (OLED) of prior art adopts red, green, blue discrete light-emitting device method to realize the structural representation of full color.Fig. 1 a-Fig. 1 f is that the organic electroluminescence device (OLED) of prior art adopts red, green, blue discrete light-emitting device to realize the manufacture method of full color.
Fig. 2 is that the organic electroluminescence device (OLED) of prior art adopts white light emitting device to variegate the structural representation that filter coating (color filter) method realizes full color.Fig. 2 a-Fig. 2 e is that the organic electroluminescence device (OLED) of prior art adopts white light emitting device to variegate the manufacture method that filter coating (color filter) method realizes full color.
Fig. 3 is the structural representation of first embodiment of the invention.Fig. 3 a-Fig. 3 f is the manufacture method of first embodiment of the invention.
Fig. 4 is a structural representation second embodiment of the invention.
Fig. 5 is the structural representation according to the 3rd execution mode of the present invention.
Fig. 6 is the manufacture method according to the 4th execution mode of the present invention.
Fig. 7 is the structural representation according to the 5th execution mode of the present invention.
Fig. 8 is the structural representation according to the 6th execution mode of the present invention.
Fig. 9 is the structural representation according to the 7th execution mode of the present invention.Fig. 9 a-Fig. 9 f is the manufacture method according to the 7th execution mode of the present invention.
Figure 10 is the structural representation according to the 8th execution mode of the present invention.Figure 10 a-Figure 10 f is the manufacture method according to the 8th execution mode of the present invention.
Embodiment
Below in conjunction with accompanying drawing embodiment of the present invention is described.
Execution mode one.
Fig. 3 is the structural representation of first embodiment of the invention.Comprising: substrate 300, metal electrode 331, passivation protection layer 302; Common hole transmission layer 311, red and green light emitting device has common luminescent layer 325, common transparency conductive electrode 301; Wherein, mutual separation of the metal electrode of each pixel and individual drive; Also comprise: substrate 350, red filter coating 351, green filter film 352.Metal electrode 331 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide (ITO) two-layer electrode (wherein, indium-tin oxide electrode mainly is to reduce the hole injection barrier), and common hole transmission layer 311 adopts N; N '-diphenyl-N, N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4; 4 '-diamines (TPD), red and green light emitting device have common luminescent layer 325 and adopt 4,4 '-two (9-carbazole) biphenyl (CBP) material of main parts to mix 2; 3,7,8; 12,13,17; 18-octaethyl-21H, red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenylisoquinoline) (acetylacetonate)-Iridium (III) and three (2-phenylpyridine) closes iridium (Ir (ppy)
3) green object dopant, common transparency conductive electrode 301 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide materials double-layer electrode, and wherein magnesium silver alloy (Mg:Ag) layer is in order to improve light percent of pass very thin thickness.
Fig. 3 a-Fig. 2 f is the manufacture method according to first embodiment of the invention.Making step comprises:
(301) coated polymeric and photoetching form passivation protection layer 302 on discrete each other metal electrode 331, see Fig. 3 a;
(302) evaporation is made as common hole transmission layer 311, sees N, N '-diphenyl-N, and N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4,4 '-diamines (TPD) is seen Fig. 3 b;
(303) utilize mask plate 390 evaporation making redness and green light emitting device to have common luminescent layer 325, adopt 4,4 '-two (9-carbazole) biphenyl (CBP) material of main parts to mix 2; 3,7,8; 12,13,17; 18-octaethyl-21H, red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenylisoquinoline) (acetylacetonate)-Iridium (III) and three (2-phenylpyridine) closes iridium (Ir (ppy)
3) green object dopant, see Fig. 3 c;
(304) the magnesium silver alloy (Mg:Ag) and the tin indium oxide materials double-layer electrode of the common transparency conductive electrode 301 of making are seen Fig. 3 d;
(305) on another substrate 350, make red filter coating 351, green filter film 352 is seen Fig. 3 e;
(306) substrate 300 and substrate 350 correspondences are bonded together, see Fig. 3 f.
Execution mode two
Fig. 4 is a structural representation second embodiment of the invention.Comprising: substrate 400, metal electrode 431, passivation protection layer 402; Common hole transmission layer 411; Red and green light emitting device has common luminescent layer 425, common hole blocking layer, electron transfer layer 426, common transparency conductive electrode 401; Wherein, mutual separation of the metal electrode of each pixel and individual drive; Also comprise: substrate 450, red filter coating 451, green filter film 452.Metal electrode 431 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide (ITO) two-layer electrode (wherein, indium-tin oxide electrode mainly is to reduce the hole injection barrier), and common hole transmission layer 411 adopts N; N '-diphenyl-N, N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4; 4 '-diamines (TPD), red and green light emitting device have common luminescent layer 425 and adopt 4,4 '-two (9-carbazole) biphenyl (CBP) material of main parts to mix 2; 3,7,8; 12,13,17; 18-octaethyl-21H, red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenylisoquinoline) (acetylacetonate)-Iridium (III) and three (2-phenylpyridine) closes iridium (Ir (ppy)
3) green object dopant; Common hole blocking layer 426 adopts 2; 9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP); Common transparency conductive electrode 401 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide materials double-layer electrode, and magnesium silver alloy (Mg:Ag) layer is in order to improve the percent of pass very thin thickness.
Execution mode three
Fig. 5 is a structural representation second embodiment of the invention.Comprising: substrate 500, transparency conductive electrode 501, passivation protection layer 502; Common hole transmission layer 511, red and green light emitting device has common luminescent layer 525, common hole blocking layer 526; Common electron transfer layer 527; Common metal electrode 531, wherein, mutual separation of the transparency conductive electrode of each pixel and individual drive; Also comprise: substrate 550, red filter coating 551, green filter film 552.Metal electrode 531 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide (ITO) two-layer electrode (wherein, indium-tin oxide electrode mainly is to reduce the hole injection barrier), and common hole transmission layer 511 adopts N, N '-diphenyl-N; N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4, the luminous object dopant material of 4 '-diamines (TPD) doped, blue two (4; 6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium (FIrpic), and red and green light emitting device has common luminescent layer 525 and adopts 4; 4 '-two (9-carbazole) biphenyl (CBP) material of main parts mix 2,3,7; 8,12,13; 17,18-octaethyl-21H, red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenylisoquinoline) (acetylacetonate)-Iridium (III) and three (2-phenylpyridine) closes iridium (Ir (ppy)
3) green object dopant; Common hole blocking layer 526 adopts 2; 9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP); Common transparency conductive electrode 501 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide materials double-layer electrode, and wherein magnesium silver alloy (Mg:Ag) layer is in order to improve the percent of pass very thin thickness.
Execution mode four
Fig. 6 is the structural representation according to the 4th execution mode of the present invention.Comprising: substrate 600, metal electrode 631, passivation protection layer 602; Hole transmission layer 611, red and green light emitting device has common luminescent layer 625, common hole blocking layer 626; Common electron transfer layer 627; Common transparency conductive electrode 601, wherein, mutual separation of the metal electrode of each pixel and individual drive; Also comprise: substrate 650, red filter coating 651, green filter film 652.Metal electrode 631 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide (ITO) two-layer electrode (wherein, indium-tin oxide electrode mainly is to reduce the hole injection barrier), and common hole transmission layer 611 adopts N; N '-diphenyl-N, N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4; 4 '-diamines (TPD), red and green light emitting device have common luminescent layer 625 and adopt 4,4 '-two (9-carbazole) biphenyl (CBP) material of main parts to mix 2; 3,7,8; 12,13,17; 18-octaethyl-21H, red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenylisoquinoline) (acetylacetonate)-Iridium (III) and three (2-phenylpyridine) closes iridium (Ir (ppy)
3) green object dopant; Common hole blocking layer 626 adopts 2,9-dimethyl-4,7-biphenyl-1; 10-phenanthrolene (BCP); Common electron transfer layer 627 adopts oxine aluminium (Alq3), and common transparency conductive electrode 601 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide materials double-layer electrode, and wherein magnesium silver alloy (Mg:Ag) layer is in order to improve the percent of pass very thin thickness.
Execution mode five
Fig. 7 is the structural representation according to the 5th execution mode of the present invention.Comprising: substrate 700, metal electrode 731, passivation protection layer 702; Hole transmission layer 711, red and green light emitting device has common luminescent layer 725, common hole blocking layer 726; Common electron transfer layer 727; Common transparency conductive electrode 701, wherein, mutual separation of the metal electrode of each pixel and individual drive; Also comprise: substrate 750, red filter coating 751, green filter film 752.Metal electrode 731 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide (ITO) two-layer electrode (wherein, indium-tin oxide electrode mainly is to reduce the hole injection barrier), and common hole transmission layer 711 adopts N, N '-diphenyl-N; N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4, the luminous object dopant material of 4 '-diamines (TPD) doped, blue two (4; 6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium (FIrpic), and red and green light emitting device has common luminescent layer 725 and adopts 4; 4 '-two (9-carbazole) biphenyl (CBP) material of main parts mix 2,3,7; 8,12,13; 17,18-octaethyl-21H, red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenylisoquinoline) (acetylacetonate)-Iridium (III) and three (2-phenylpyridine) closes iridium (Ir (ppy)
3) green object dopant; Common hole blocking layer 726 adopts 2,9-dimethyl-4,7-biphenyl-1; 10-phenanthrolene (BCP); Common electron transfer layer 727 adopts oxine aluminium (Alq3), and common transparency conductive electrode 701 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide materials double-layer electrode, and wherein magnesium silver alloy (Mg:Ag) layer is in order to improve the percent of pass very thin thickness.
Execution mode six
Fig. 8 is the structural representation according to the 6th execution mode of the present invention.Comprising: substrate 800, metal electrode 831, passivation protection layer 802; Hole transmission layer 811, red, green and Yellow luminous device has common luminescent layer 825, common hole blocking layer 826; Common electron transfer layer 827; Common transparency conductive electrode 801, wherein, mutual separation of the metal electrode of each pixel and individual drive; Also comprise: substrate 850, red filter coating 851, green filter film 852, Yellow filter film 854.Metal electrode 831 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide (ITO) two-layer electrode (wherein, indium-tin oxide electrode mainly is to reduce the hole injection barrier), and common hole transmission layer 811 adopts N; N '-diphenyl-N, N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4; The luminous object dopant material of 4 '-diamines (TPD) doped, blue two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium (FIrpic); Red, green and Yellow luminous device has common luminescent layer 825 and adopts 4,4 '-two (9-carbazole) biphenyl (CBP) material of main parts to mix 2,3; 7,8,12; 13,17,18-octaethyl-21H; Red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenyl isoquinoline) (acetylacetonate)-Iridium (III), three (2-phenylpyridine) closes iridium (Ir (ppy) 3) green object dopant and yellow object dopant lycid alkene (Rubrene), common hole blocking layer 726 adopts 2,9-dimethyl-4; 7-biphenyl-1,10-phenanthrolene (BCP), common electron transfer layer 727 adopts oxine aluminium (Alq3); Common transparency conductive electrode 701 adopts magnesium silver alloy (Mg:Ag) and tin indium oxide materials double-layer electrode, and wherein magnesium silver alloy (Mg:Ag) layer is in order to improve the percent of pass very thin thickness.
Execution mode seven
Fig. 9 is the structural representation according to the 7th execution mode of the present invention.Comprising: substrate 950, red filter coating 951, green filter film 952; Flatness layer 902, common transparency conductive electrode 901 adopts the tin indium oxide materials, falls trapezoidal photoresist 903; The hole transmission layer of making simultaneously 911, the redness of making simultaneously and green common luminescent layer 925, the hole blocking layer of making simultaneously 926; The metal electrode of making simultaneously 931, wherein, the metal electrode of each pixel is owing to fall the mutual separation of buffer action and the individual drive of trapezoidal photoresist 903.Metal electrode 931 adopts magnesium silver alloy (Mg:Ag), and the hole transmission layer of making simultaneously 411 adopts N, N '-diphenyl-N, N '-two (3-aminomethyl phenyl)-1; 1 '-biphenyl-4,4 '-diamines (TPD), red and green light emitting device have the common luminescent layer of making simultaneously 925 and adopt 4; 4 '-two (9-carbazole) biphenyl (CBP) material of main parts mix 2,3,7; 8,12,13; 17,18-octaethyl-21H, red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenylisoquinoline) (acetylacetonate)-Iridium (III) and three (2-phenylpyridine) closes iridium (Ir (ppy)
3) green object dopant, the hole blocking layer of making simultaneously 926 adopts 2,9-dimethyl-4, and 7-biphenyl-1,10-phenanthrolene (BCP), common transparency conductive electrode 901 adopts the tin indium oxide material.Fig. 9 also comprises: substrate 960, gate electrode 961, gate insulation layer 962, transistor active layer 963; Source-drain electrode 964, passivation layer 965, elasticity dottle pin material 966, pixel electrode 967; Wherein, gate electrode 961 adopts aluminium neodymium alloy (AlNd) material, and gate insulation layer 962 adopts silicon nitride (SiNx) material, and transistor active layer 963 adopts indium oxide gallium zinc (IGZO); Source-drain electrode 964 adopts metal molybdenum (Mo) material, and passivation layer 965 adopts silicon nitride (SiNx) material, and pixel electrode 967 adopts phosphide material.
Fig. 9 a-Fig. 9 f is the manufacture method according to the 7th execution mode of the present invention.Making step comprises:
(401) metallic aluminium neodymium alloy material is made in sputter on substrate 960, and photoetching forms gate electrode 961; Utilize chemical meteorology deposition to make silicon nitride film and form gate insulation layer 962; Utilize sputter to make indium oxide gallium zinc (IGZO) film, photoetching forms transistor active layer 963; Utilize sputter to make the metal molybdenum material, photoetching forms source-drain electrode; Utilize chemical meteorology deposition to make silicon nitride film and form passivation layer 965 and photoetching formation connection via hole; Utilize rotary coating and photoetching making elasticity dottle pin material 966; Splash-proofing sputtering metal indium film and photoetching form pixel electrode 967, see Fig. 9 a;
(402) on substrate 950, utilize red filter coating 951 of rotary coating and photoetching making and green filter film 952; Utilize rotary coating to make flatness layer 902; Utilize the tin indium oxide material of the common transparency conductive electrode of sputter 901, see Fig. 9 b;
(403) utilize rotation coating negative photoresist material and photoetching to form down trapezoidal 903; The N as common hole transmission layer 311 is made in evaporation, N '-diphenyl-N, and N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4,4 '-diamines (TPD) is seen Fig. 9 c;
(404) utilize mask plate 990 evaporation making redness and green light emitting device to have common luminescent layer 925, adopt 4,4 '-two (9-carbazole) biphenyl (CBP) material of main parts to mix 2; 3,7,8; 12,13,17; 18-octaethyl-21H, red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenylisoquinoline) (acetylacetonate)-Iridium (III) and three (2-phenylpyridine) closes iridium (Ir (ppy)
3) green object dopant, see Fig. 9 d;
(405) evaporation 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) is as the hole blocking layer of making simultaneously 926; Magnesium silver alloy metal is made in evaporation, is formed on the metal electrode 931 of mutual separation owing to fall the effect of trapezoidal photoresist, sees Fig. 9 e;
(406) heated substrate 960 makes the indium metal fusing of pixel electrode 967, and according to corresponding being crimped on together of pixel, pixel electrode 967 links together with metal electrode 931 like this, sees Fig. 9 f with two substrates.
Execution mode eight
Figure 10 is the structural representation according to the 8th execution mode of the present invention.Comprising: substrate 1050, red filter coating 1051, green filter film 1052.Also comprise: substrate 1060, gate electrode 1061, gate insulation layer 1062; Transistor active layer 1063, source-drain electrode 1064, passivation layer 1065; Wherein, gate electrode 1061 adopts aluminium neodymium alloy material, and gate insulation layer 1062 adopts silicon nitride material; Transistor active layer 1063 adopts indium oxide gallium zinc (IGZO), low temperature polycrystalline silicon or amorphous silicon, and source-drain electrode 1064 adopts the metal molybdenum material, and passivation layer 1065 adopts silicon nitride material.Fig. 9 also comprises: metal electrode 1031, and passivation protection layer 1002, common hole transmission layer 1011, red and green light emitting device has common luminescent layer 1025, common hole blocking layer 1026, common transparency conductive electrode 1001.
(501) on substrate 950, utilize red filter coating 951 of rotary coating and photoetching making and green filter film 952, see Figure 10 a;
(502) metallic aluminium neodymium alloy material is made in sputter on substrate 1060, and photoetching forms gate electrode 1061; Utilize chemical meteorology deposition to make silicon nitride film and form gate insulation layer 1062; Utilize sputter to make indium oxide gallium zinc film, photoetching forms transistor active layer 1063; Utilize sputter to make the metal molybdenum material, photoetching forms source-drain electrode 1064; Utilize chemical meteorology deposition to make silicon nitride film and form passivation layer 1065 and photoetching formation connection via hole; Make magnesium metal silver alloy film and tin indium oxide and photoetching and form metal electrode 1031, make passivation protection layer 1002, see Figure 10 b;
(503) the common hole transmission layer 1011 of evaporation is seen Figure 10 c;
(503) utilize mask plate 1090 evaporation making redness and green light emitting device to have common luminescent layer 1025, adopt 4,4 '-two (9-carbazole) biphenyl (CBP) material of main parts to mix 2; 3,7,8; 12,13,17; 18-octaethyl-21H, red object dopant of 23H-porphyrin platinum (PtOEP) or Bis (1-phenylisoquinoline) (acetylacetonate)-Iridium (III) and three (2-phenylpyridine) closes iridium (Ir (ppy)
3) green object dopant, see Figure 10 d;
(504) the common hole blocking layer 1026 of evaporation, the transparency electrode 1001 that sputter is common is seen Figure 10 e;
(505) substrate 1060 and substrate 1050 correspondences are bonded together, see Figure 10 f.
More than be described to preferred implementation of the present invention, it should be appreciated by those skilled in the art that not breaking away from the scope basis of spirit of the present invention and claims and can carry out variations and modifications.
Claims (9)
1. organic electroluminescence device; It is characterized in that; Realize discrete electrodes separately, the common electrode that red pixel area, green pixel zone and the blue pixel area of full color is corresponding and be clipped in the organic function layer between the two-layer electrode; Wherein red pixel area and green pixel zone have common organic function layer structure, and the corresponding red filter coating of red pixel area, the corresponding green filter film in green pixel zone; The organic function layer structure of blue pixel area is different with the organic function layer structure in red pixel area and green pixel zone.
2. organic electroluminescence device according to claim 1; It is characterized in that; Realize red pixel area, green pixel zone, blue pixel area and white pixel regional corresponding discrete electrodes separately, the common electrode of full color and be clipped in the organic function layer between the two-layer electrode; Wherein red pixel area, green pixel zone and white pixel zone have common organic function layer structure; And the corresponding red filter coating of red pixel area, the corresponding green filter film in green pixel zone, there is not filter coating in the white pixel zone; The organic function layer structure of blue pixel area is different with the organic function layer structure in red pixel area, green pixel zone and white pixel zone.
3. according to the described organic electroluminescence device of claim 1-2; It is characterized in that; Realize discrete electrodes separately, the common electrode that red pixel area, green pixel zone and the blue pixel area of full color is corresponding and be clipped in hole transmission layer and the luminescent layer between the two-layer electrode, wherein red pixel area, green pixel zone and blue pixel area have common hole transmission layer; Red pixel area and green pixel zone have common luminescent layer, and the corresponding red filter coating of red pixel area, the corresponding green filter film in green pixel zone; There is not luminescent layer in blue pixel area, and there is not filter coating in blue pixel area.
4. according to the described organic electroluminescence device of claim 1-2; It is characterized in that; Realize discrete electrodes separately, the common electrode that red pixel area, green pixel zone and the blue pixel area of full color is corresponding and be clipped in hole transmission layer, luminescent layer and the hole blocking layer between the two-layer electrode, wherein red pixel area, green pixel zone and blue pixel area have common hole blocking layer.
5. according to the described organic electroluminescence device of claim 1-3; It is characterized in that; Realize red pixel area, green pixel zone, blue pixel area and white pixel regional corresponding discrete electrodes separately, the common electrode of full color and be clipped in hole transmission layer and the luminescent layer between the two-layer electrode, wherein red pixel area, green pixel zone, blue pixel area and white pixel zone have common hole transmission layer; Red pixel area, green pixel zone and white pixel zone have common luminescent layer, and the corresponding red filter coating of red pixel area, the corresponding green filter film in green pixel zone, and there is not filter coating in the white pixel zone; There is not luminescent layer in blue pixel area, and there is not filter coating in blue pixel area.
6. according to the described organic electroluminescence device of claim 1-4; It is characterized in that; Realize discrete electrodes separately, the common electrode that red pixel area, green pixel zone and the blue pixel area of full color is corresponding and be clipped in hole transmission layer, luminescent layer and the hole blocking layer between the two-layer electrode, wherein red pixel area, green pixel zone and blue pixel area have common hole blocking layer.
7. according to described organic electroluminescence device of claim 1-5 and manufacture method; It is characterized in that; Adopt active active device drive; Driver element device active material comprises silicon, metal oxide, known organic semiconducting materials, and metallic element comprises elements such as tin, zinc, boron, aluminium, gallium, indium, ytterbium, gallium, rare earth, the whole mol ratio of one or more oxides of above metal or the combination etc. of whole mol ratio.
8. according to the described organic electroluminescence device of claim 1-6, it is characterized in that manufacturing process comprises:
(1) on substrate, makes redness and green filter film respectively, be made into figure, make transparency electrode again;
(2) the common hole transmission layer of deposition on the transparency electrode substrate;
(3) utilize mask plate (Shadow Mask) to be manufactured with common luminescent layer in red and green pixel zone, like the Yellow light emitting layer; Make common hole blocking layer again;
(4) make metal electrode;
(5) on another substrate, make active driving matrix, like the active driving matrix of metal oxide;
(6) metal electrode of making interconnect function on the pixel electrode of each active matrix is corresponding with the organic light-emitting device pixel that top step is made;
(7) utilize metal electrode to connect together accordingly two substrate pixels, play the effect of each active each organic light-emitting units device of active drive device drive through crimping (Wafer Bonding) with interconnect function.
9. according to the described organic electroluminescence device of claim 1-6, it is characterized in that manufacturing process comprises:
(1) on substrate, makes silicon or the active active drive matrix of metal oxide;
(2) on active active drive matrix, deposit hole transmission layer;
(3) utilize mask plate (Shadow Mask) to make common luminescent layer such as Yellow light emitting layer in red and green light emitting device zone; Make common hole blocking layer and electron transfer layer;
(4) make transparency electrode;
(5) on another substrate, make redness and green filter film, and be made into figure;
(6) two substrates bond together according to the unit pixel correspondence.
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| CN103855179A (en) * | 2012-12-03 | 2014-06-11 | 孙润光 | Inorganic light-emitting diode display device structure |
| CN104218049A (en) * | 2013-05-29 | 2014-12-17 | 三星显示有限公司 | Organic light-emitting display device and method of manufacturing the same |
| WO2015043303A1 (en) * | 2013-09-25 | 2015-04-02 | 京东方科技集团股份有限公司 | Evaporation method and evaporation device |
| WO2016011688A1 (en) * | 2014-07-22 | 2016-01-28 | 深圳市华星光电技术有限公司 | Color display component structure |
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| CN103855179A (en) * | 2012-12-03 | 2014-06-11 | 孙润光 | Inorganic light-emitting diode display device structure |
| CN104218049A (en) * | 2013-05-29 | 2014-12-17 | 三星显示有限公司 | Organic light-emitting display device and method of manufacturing the same |
| WO2015043303A1 (en) * | 2013-09-25 | 2015-04-02 | 京东方科技集团股份有限公司 | Evaporation method and evaporation device |
| US10096774B2 (en) | 2013-09-25 | 2018-10-09 | Boe Technology Group Co., Ltd. | Evaporation method and evaporation device |
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| US9450029B2 (en) | 2013-12-27 | 2016-09-20 | Boe Technology Group Co., Ltd. | OLED display panel and method for manufacturing the same |
| WO2016011688A1 (en) * | 2014-07-22 | 2016-01-28 | 深圳市华星光电技术有限公司 | Color display component structure |
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Application publication date: 20121128 |