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CN102400092B - 壳体及其制造方法 - Google Patents

壳体及其制造方法 Download PDF

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Publication number
CN102400092B
CN102400092B CN201010278449.6A CN201010278449A CN102400092B CN 102400092 B CN102400092 B CN 102400092B CN 201010278449 A CN201010278449 A CN 201010278449A CN 102400092 B CN102400092 B CN 102400092B
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China
Prior art keywords
layer
aluminum
alno
aluminum alloy
manufacturing
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Expired - Fee Related
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CN102400092A (zh
Inventor
张新倍
陈文荣
蒋焕梧
陈正士
张满喜
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Beijing Zhongcai Wyse Education Technology Co ltd
Nantong Dongfang Science & Technology Co ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN201010278449.6A priority Critical patent/CN102400092B/zh
Priority to US12/966,031 priority patent/US20120064366A1/en
Publication of CN102400092A publication Critical patent/CN102400092A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y10T428/12764—Next to Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种壳体，该壳体包括铝合金基体、依次形成于该铝合金基体上的铝层及AlNO层。该铝层与AlNO层组成的复合膜层提高了所述壳体的耐腐蚀性。本发明还提供了上述壳体的制造方法。

Description

壳体及其制造方法
技术领域
本发明涉及一种壳体及其制造方法，特别涉及一种铝合金壳体及其制造方法。
背景技术
铝合金目前被广泛应用于航空、航天、汽车及微电子等工业领域。但铝合金的标准电极电位很低，耐腐蚀差，暴露于自然环境中会引起表面快速腐蚀。
提高铝合金耐腐蚀性的方法通常是在其表面形成保护性的膜层。传统的阳极氧化、烤漆及电镀等铝合金的表面处理方法存在生产工艺复杂、效率低、环境污染严重等缺点。而真空镀膜(PVD)技术虽是一种非常环保的镀膜工艺，且可镀制的膜层种类丰富、耐磨性能优异，但PVD工艺沉积的膜层大多以柱状晶形态生长，因此膜层存在大量的晶间间隙，导致膜层致密性不够而对铝合金的耐腐蚀性能的提高有限。
发明内容
鉴于此，提供一种具有较好的耐腐蚀性的铝合金的壳体。
另外，还提供一种上述壳体的制造方法。
一种壳体，该壳体包括铝合金基体、依次形成于该铝合金基体上的铝层及AlNO层。
一种壳体的制造方法，其包括如下步骤：
提供铝合金基体；
以铝靶为靶材，于该铝合金基体的表面磁控溅射铝层；
以铝靶为靶材，以氮气和氧气为反应气体，于该铝层上磁控溅射形成含有AlN相、Al2O3相及Al-N-O固溶相的AlNO层。
由于铝的电极电位与铝合金相当，所述铝层不易与铝合金基体发生电偶腐蚀；此外，所述铝层的形成还可避免铝合金基体发生第二相腐蚀，因此，所述铝层的形成可显著提高所述壳体的耐腐蚀性。
在所述AlNO层的形成过程中，Al不仅能与N、O形成Al-N-O固溶相，还能分别与N、O形成AlN相、Al2O3相。AlN相、Al2O3相及Al-N-O固溶相多相混合物同时生长，避免了在AlNO层中形成柱状晶结构，从而显著提高AlNO层的致密性。所述AlNO层致密性的显著提高，进一步增强了壳体的耐腐蚀性。
附图说明
图1是本发明较佳实施方式壳体的剖视示意图。
主要元件符号说明
壳体        10
铝合金基体  11
铝层        13
AlNO层      15
具体实施方式
请参阅图1，本发明一较佳实施例的壳体10包括铝合金基体11、依次形成于该铝合金基体11上的铝层13及AlNO（氮氧化铝）层15。所述壳体10可为3C电子产品的壳体，也可为建筑用件及汽车等交通工具的零部件等。
所述铝层13及AlNO层15均通过磁控溅射镀膜法形成。所述铝层13的厚度为200～700nm。所述AlNO层15的厚度为0.2～2.0μm。
所述壳体10的制造方法主要包括如下步骤：
提供铝合金基体11，该铝合金基体11可以通过冲压成型得到，其具有待制得的壳体10的结构。
将所述铝合金基体11放入盛装有乙醇及/或丙酮溶液的超声波清洗器中进行震动清洗，以除去铝合金基体11表面的杂质和油污。清洗完毕后烘干备用。
再对铝合金基体11的表面进行氩气等离子清洗，进一步去除铝合金基体11表面的油污，以改善铝合金基体11表面与后续涂层的结合力。对铝合金基体11的表面进行氩气等离子清洗的方法包括如下步骤：将铝合金基体11放入真空镀膜机（图未示）的镀膜室内的工件架上，抽真空该镀膜室至8.0×10-3Pa，以300～600sccm（标准状态毫升/分钟）的流量向镀膜室内通入纯度为99.999%的氩气（工作气体），于铝合金基体11上施加-300～-800V的偏压，对铝合金基体11表面进行等离子清洗，清洗时间为3～10min。
采用磁控溅射镀膜法在铝合金基体11表面依次形成铝层13及AlNO层15。形成该铝层13及AlNO层15的具体操作方法及工艺参数为：
在所述等离子清洗完成后，调节氩气流量至130～300sccm，设置占空比为30～70%，设置所述工件架的公转速度为0.5～3.0r/min（revolution per minute，转/分钟），加热所述镀膜室至50～130℃（即溅射温度为50～130℃）；开启已置于所述真空镀膜机中的铝靶的电源，并设定其功率为5～10kw，于铝合金基体11上施加-50～-300V的偏压，沉积铝层13。沉积该铝层13的时间为20～60min。
形成所述铝层13后，向镀膜室中通入流量为10～120sccm的反应气体氮气及流量为10～60sccm的反应气体氧气，沉积AlNO层15。沉积该AlNO层15的时间为20～60min。
由于铝的电极电位与铝合金相当，所述铝层13不易与铝合金基体11发生电偶腐蚀；此外，所述铝层13的形成还可避免铝合金基体11发生第二相腐蚀，因此，所述铝层13的形成可显著提高所述壳体10的耐腐蚀性。
在所述AlNO层15的形成过程中，Al不仅能与N、O形成Al-N-O固溶相，还能分别与N、O形成AlN相、Al2O3相。AlN相、Al2O3相及Al-N-O固溶相多相混合物同时生长，能互相抑制柱状晶体的生长，避免了在AlNO层15中形成柱状晶结构，从而显著提高了AlNO层15的致密性。所述AlNO层15致密性的提高，进一步增强了壳体10的耐腐蚀性。
由于所述铝层13的形成能提高所述AlNO层15与铝合金基体11之间的结合力，且所述AlNO层15中的AlN相、Al2O3相及Al-N-O固溶相之间具有较好的相容性、结合力，使经上述制造方法制得的壳体具有较好的耐磨性。

Claims (10)

1.一种壳体，包括铝合金基体，其特征在于：所述壳体还包括依次形成于该铝合金基体上的铝层及AlNO层。
2.如权利要求1所述的壳体，其特征在于：所述铝层及AlNO层通过磁控溅射镀膜法形成。
3.如权利要求2所述的壳体，其特征在于：所述AlNO层含有AlN相、Al2O3相及Al-N-O固溶相。
4.如权利要求1所述的壳体，其特征在于：所述铝层的厚度为200～700nm，所述AlNO层的厚度为0.2～2.0μm。
5.一种壳体的制造方法，其包括如下步骤：
提供铝合金基体；
以铝靶为靶材，于该铝合金基体的表面磁控溅射铝层；
以铝靶为靶材，以氮气和氧气为反应气体，于该铝层上磁控溅射形成含有AlN相、Al2O3相及Al-N-O固溶相的AlNO层。
6.如权利要求5所述的壳体的制造方法，其特征在于：溅射所述铝层的工艺参数为：铝靶的电源功率为5～10kw，以氩气为工作气体，其流量为130～300sccm，于铝合金基体上施加-50～-300V的偏压，溅射温度为50～130℃。
7.如权利要求6所述的壳体的制造方法，其特征在于：溅射所述铝层的时间为30～90min。
8.如权利要求7所述的壳体的制造方法，其特征在于：溅射所述AlNO层的工艺参数为：氮气的流量为10～120sccm，氧气的流量为10～60sccm。
9.如权利要求8所述的壳体的制造方法，其特征在于：溅射所述AlNO层的时间为20～60min。
10.如权利要求5所述的壳体的制造方法，其特征在于：所述壳体的制造方法还包括在进行磁控溅射铝层前对所述铝合金基体进行超声波清洗及等离子清洗的步骤。
CN201010278449.6A 2010-09-10 2010-09-10 壳体及其制造方法 Expired - Fee Related CN102400092B (zh)

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US12/966,031 US20120064366A1 (en) 2010-09-10 2010-12-13 Housing and method for manufacturing housing

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CN102820418A (zh) * 2012-08-28 2012-12-12 广州有色金属研究院 一种半导体照明用绝缘导热膜层材料及其制备方法
JP6144532B2 (ja) * 2013-05-01 2017-06-07 株式会社デンソー ブレージングシートのろう付け方法、及び熱交換器の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769291A (en) * 1987-02-02 1988-09-06 The Boc Group, Inc. Transparent coatings by reactive sputtering
CN1056159A (zh) * 1991-06-18 1991-11-13 北京市太阳能研究所 太阳能选择性吸收膜及制备
US20100086775A1 (en) * 2008-10-06 2010-04-08 Bruce Lairson Optical spectrally selective coatings

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL43910C (zh) * 1933-10-11
US4331737A (en) * 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
DE2851584B2 (de) * 1978-11-29 1980-09-04 Fried. Krupp Gmbh, 4300 Essen Verbundkörper
US8372250B2 (en) * 2007-07-23 2013-02-12 National Science And Technology Development Agency Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769291A (en) * 1987-02-02 1988-09-06 The Boc Group, Inc. Transparent coatings by reactive sputtering
CN1056159A (zh) * 1991-06-18 1991-11-13 北京市太阳能研究所 太阳能选择性吸收膜及制备
US20100086775A1 (en) * 2008-10-06 2010-04-08 Bruce Lairson Optical spectrally selective coatings

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