CN1023839C - Electrooptic modulator - Google Patents
Electrooptic modulator Download PDFInfo
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- CN1023839C CN1023839C CN89100122A CN89100122A CN1023839C CN 1023839 C CN1023839 C CN 1023839C CN 89100122 A CN89100122 A CN 89100122A CN 89100122 A CN89100122 A CN 89100122A CN 1023839 C CN1023839 C CN 1023839C
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- refractive index
- electrooptic modulator
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference using semi-conducting materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0154—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using electro-optic effects, e.g. linear electro optic [LEO], Pockels, quadratic electro optical [QEO] or Kerr effect
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Developing Agents For Electrophotography (AREA)
Abstract
An electro-optic modulator is provided, which comprises a singlecrystal basal piece (12) and an internal reflector (18), a resonant cavity (20) and an external reflector (24) arranged in sequence on the basal piece (12). With such a configuration, when the reverse bias voltage is added to the modulator by inflicting the voltage, the voltage can be changed to modulate the optic performance of the modulator.
Description
The present invention relates to a kind of electrooptic modulator.
Modulator of the present invention can allow the semiconductor lamella of light transmission of wavelength coverage broad form by some.This modulator can be modulated its wavelength that the back is about to speak of and equal or near a series of emission or catoptrical phase places that have the discrete wavelength of simple relation each other, modulate emission light or catoptrical intensity are arranged again.Adjust the size and/or the structure of modulator and can in a broad range, select these discrete operation wavelengths arbitrarily.Modulation is to be undertaken by changing into the voltage that modulator work is added on it.
One aspect of the present invention provides the electrooptic modulator with a kind of like this structure.One has the monocrystal chip of a certain refractive index, dispose the inner reflector that first group of oriented growth single crystalline layer forms on the substrate successively, one resonant cavity layer and the external reflection device that forms by second group of oriented growth single crystalline layer, it (is one or more layers of inner reflector that this structure has a part at least, substrate and resonant cavity layer) conduct electricity, and be P-type conduction or n type conduction, another part at least of this structure (being one or more layers of external reflection device and resonant cavity device) conducts electricity, and be n type conduction or P-type conduction, but its conduction type is different with a described part.This structure also comprises respectively carries out first and second electric installations that resistance contacts with the described part of described structure with described another part, thereby toward described electric installation when applying voltage, described structure just is added with reverse bias, so that electric field is added to the two ends of described resonant cavity layer, thereby change the refractive index that described electric field changes the resonant cavity layer by changing described bias voltage, with the light by modulator in use of modulation correspondingly.
Form each layer of reverberator, its refractive index and thickness are changeable, so as to reach have λ/2 or the synthesis cycle of its odd-multiple optical thickness, wherein λ is that special modulator is treated the longest wavelength value in a series of presumable discrete wavelength of light modulated.
Adjust the size and/or the structure of modulator and can in the scope of a broadness, select these discrete wavelength that works arbitrarily.
In another embodiment, the composition of reverberator, thereby the refractive index of reverberator can be to change continuously or change piecemeal, so that make the synthesis cycle that reaches have the optical thickness of λ/2 or its odd-multiple.
Refractive index Nr(V) as appearing at the function of the electric field in the resonant cavity layer and change, this electric field then is because of at least owing to causing at the potential difference (PD) V of certain specific direction by some specific polarization applying unit on this resonant cavity of the light of this resonant cavity layer.
At wavelength is under the λ m, the light transmission capacity maximum of modulator, and wherein λ m can be obtained by following formula:
(2π Nr（Ⅰ）d Cosθ)/(λm) - (Φ
1+Φ
2)/2 ＝mπ
m＝0，1，2，……
Wherein θ is that light is at the propagation angle of resonant cavity layer with respect to this layer normal, phase place Φ
1, Φ
2(following being about to spoken of) and refractive index Nr(V) be meant the light of when voltage V is added between the metal layer of modulator, in this resonant cavity layer, propagating with any specific communication mode of allowing." m " can be selected in 0 to 20 scope.
Φ
1And Φ
2Limit by the following relationship formula:
r
i＝r
1exp（j Φ
1）
R wherein
1Be included in the amplitude of the reflectivity of each thin layer in the inner reflector, Φ
1It is the phase shift under this reflectivity.
r
o＝r
2exp（j Φ
2）
R wherein
2Be the amplitude of the reflectivity of each layer of external reflection device, Φ
2Be the phase shift under this reflectivity.
Inner reflector adjoins that one deck refractive index Nb of resonant cavity layer and the refractive index Na that the external reflection device is close to that one deck of resonant cavity layer, should be when any particular job voltage is arranged at the modulator two ends, the refractive index Nr(V of resonant cavity layer) have any one relation in following two relations:
If Na＜Nr(V), Nb＜Nr(V) then
Perhaps if Na＞Nr(V), Nb＞Nr(V) then
In addition, usually at Φ
1+ Φ
2=2 π
Φ
1+Φ
2＝0
Situation under, above-mentioned and λ m, m, Nr(V) formula relevant with λ can be reduced to:
Nr（V）dCosθ＝ (m′λm)/2
Therefore, according to the present invention, in the case, the value of m ' is 1 ... in 20 the scope.
Only further specify content of the present invention by way of example now by accompanying drawing.This unique accompanying drawing is the perspective illustration of electrooptic modulator of the present invention.
The monocrystal chip 12 that it is Ns that modulator 10 shown in the figure has a refractive index.The one or more layers material that is intended to reduce the backside reflection rate can be laid in " back side " of this substrate, make modulator low when its luminance factor is not coated with this material under operation wavelength, also can be metallized in some position of substrate simultaneously, contact so that carry out resistance, for example as the metal layer shown in the figure 14 with modulator.
The single crystalline layer 16 that together constitutes first group of oriented growth of inner reflector 18 just is located on this substrate.The composition of these thin layers, thickness and number promptly constitute every known facts of Film Optics and semiconductor technology choose, to obtain the variable of desirable reflectivity, electric conductivity, transparency, stability and crystal growth parameters.
The Partial Feature of inner reflector is its plural reflectivity amplitude r, wherein:
r
i＝r
1exp（j Φ
1）
R wherein
1It is the size of reflectivity.
Be mounted with a resonant cavity layer that is in contact with it directly over the inner reflector 18, the thickness of this layer is d, and its refractive index to the light by this Es-region propagations is Nr(V), wherein V is the potential difference (PD) that is added in the modulator two ends.This refractive index should have a kind of of following two kinds of performances:
If Na＜Nr(V), Nb＜Nr(V) then
Perhaps if Na＞Nr(V), Nb＞Nr(V) then
Wherein Nb is the refractive index that inner reflector 18 adjoins that skim of resonant cavity layer, Na be in the following a series of thin layers 22 that are about to speak of that directly adjoin resonant cavity layer 20 and contact with resonant cavity layer 20, in the refractive index of the thin layer of reverberator 18 offsides.
Resonant cavity layer top is provided with above-mentioned thin layer 22 in groups, and each thin layer is the monocrystalline form of oriented growth.These thin layers constitute external reflection device 24 together.The same with inner reflector 18, each thin layer 22 that constitutes the external reflection device is to choose by every known facts of Film Optics and semiconductor technology, to obtain every performance such as each parameter of desirable reflectivity, electric conductivity, transparency, stability and crystal growth.
The Partial Feature of external reflection device 24 can be its plural reflectivity amplitude r, wherein:
r
o＝r
2exp（j Φ
2）
R wherein
2Be the reflectivity amplitude.
Any compound that substrate and each material layer thereafter can be made by the element of the periodic table of chemical element or alloy or be fit to the monocrystalline that the pure element of this purposes is formed.For example,
Substrate and thereafter each material be some by being selected from the monocrystalline that the material that comprises gallium, aluminium and arsenic element family is made, these materials mix with special ratios in specific thin layer.
Substrate and thereafter each material layer be some by being selected from the monocrystalline that the material that comprises gallium, indium, arsenic and P elements family is made, these materials mix with specific ratio in specific thin layer.
Substrate and thereafter each material be some by being selected from the monocrystalline that the material that comprises gallium, indium, aluminium, arsenic and antimony element family is made, these materials mix with specific ratio in specific thin layer.
Substrate and thereafter each material layer can also be some by being selected from the monocrystalline that the material that comprises mercury, cadmium, manganese and tellurium element family is made, these materials mix with specific ratio in specific thin layer.
Substrate and thereafter each material layer can also be some by being selected from the monocrystalline that the material that comprises lead, sulphur, tellurium and selenium family of elements is made, these materials mix with specific ratio in specific thin layer.
Adopt other material system be possible also be that those skilled in the art institute is conspicuous.
In addition, each described thin layer can be formed by generally being called the thinner layer of sequence structure or multi-quantum pit structure again, perhaps described each thin layer of Dou series classification on forming.
Some part of inner reflector and/or substrate and/or resonant cavity layer is necessary to mix with foreign atom their is conducted electricity.This conduction (below be referred to as first kind of conduction) can be by means of electronics (n type) or by means of hole (P type).
First metal layer (14) suitable and that first kind of conductiving doping material contacts as resistance is laid on the substrate 12 or on the modulator that is laid in or another place of close modulator, and it is contacted as resistance with this dopant.
Some position of external reflection device 24 and/or resonant cavity layer 20 is mixed with foreign atom and makes its conduction.This conduction (below be referred to as second kind of conduction) can be by means of electronics (n type) or by means of hole (P type).If first kind of conduction is the n type, then second kind of conduction is the P type, if first kind of conduction is the P type, then second kind of conduction is the n type.
Second kind of metal layer suitable and that second kind of conductiving doping material contacts as resistance is laid on the modulator or close modulator place makes it contact as resistance with this dopant material.As we can see from the figure, this metal layer be with the form of metallization frame 30 outside reverberator 24 go up away from the surperficial 24a of resonant cavity layer 20 and form.
For simplicity, we are generically and collectively referred to as " material structure " with substrate 12, inside and outside reverberator 18,24, resonant cavity layer 20 together with other overlayer of above-mentioned metal layer and thin layer 20 or reverberator 18,24 either sides.On material structure, can form one or more modulator 10 or modulator group 10 by etching or other partition method, like this with those of metal construction be respectively the part of first kind and second kind conduction contact and with metal layer that specific modulator or modulator group contact between when adding reverse biased, electric field mainly is added in along on the n type and the direct path between the P-type material of each particular modulator that so connects.Reverse biased is by the current potential that improves n section bar material its current potential that surpasses P-type material to be obtained as usually.
In this case, do not have electric current to flow through basically, but there is electric field at resonant cavity layer two ends.The refractive index of this thin layer can become by changing electric field (for example changing potential difference (PD)).
Illustrated modulator structure among the described here and figure, can partly or entirely add the material that comprises semiconductor (no matter being the semiconductor that is subjected to or is not resembled the high energy particle irradiation of proton and so on), polymkeric substance or insulating material around it, make it play passivation, reduce or increase surface recombination, play the light sealing function or improve environmental stability.
From planimetric map (from above), modulator can be got Any shape, comprises square, rectangle, circle or oval.Each sidewall (if any words) can be perpendicular to substrate, or tilt or be curved surface.
Talk about above, the incident beam of any specific wavelength λ is by the making alive V of institute that changes when propagating by modulator, thereby changes refractive index Nr(V) and modulate.This variation of refractive index makes modulator maximum transmitted light wavelength position λ m change with respect to wavelength X by above-mentioned expression formula, so just by modulators modulate the light that is transmitted.The phase place of catoptrical intensity and emission light beam and folded light beam is also all modulated.These phase modulation (PM) are that the optical thickness because of the resonant cavity layer changes and produces.
For reaching optimum performance, the structure of modulator must be the admittance coupling with incident medium.For example, if substrate, high index of refraction Ng and low-refraction thin layer are to be that the AlAs of Na constitutes by refractive index, and if this structure stops with a high refractive index layer at the interface at the incident medium away from substrate, and if the number of the low-index layer in the inner reflector is y, the number of low-index layer is x in the external reflection device, and if modulator is irradiated on the incident direction of normal, then the optical admittance Y of modulator structure is:
2（x-y）
Y＝Ng（Ng/Na）
If incident medium be optical admittance extremely near the air of Y=1, then work as
During y=x+4,
In the bright wavelength coverage of whole full impregnated of modulator, all have extremely near good admittance coupling.
The front is talked about,
Φ
1+Φ
2＝2π
Situation under, mentioned previously and Nr(V), d, θ, λ m Φ
1, Φ
2Relevant equation can be reduced to:
Nr（V）d Cosθ＝ (m′λm′)/2
M '=m+1 wherein,
We find that the value of m or m ' had better not be selected too much.The value of m is in 0 to 20 scope, or the value of m ' can achieve satisfactory results in 1 to 21 scope.For example, can choose m ' is 14.
Modulator described here suits to work under any wavelength in the transparent scope of structured material.If but the resonant cavity layer is selected multi-quantum pit structure for use, and operation wavelength system chooses corresponding to the wavelength that excites the subarea below the basic energy gap of resonant cavity layer just in time (as people such as triumphant Mu La in U.S. Pat 4,525, in 687 disclosed like that), then the performance of modulator can be significantly improved when working under other wavelength.
The difference of the described modulators of people such as modulator of the present invention and triumphant Mu La is:
1. the work of modulator is not limited to the wavelength zone near band gap, although the work limitation fruit is best in this district.
2. the Fabry-Perot resonator of modulator of the present invention is whole integrated single material structure, and the described modulator of people such as triumphant Mu La then is made up of discrete component.
3. the inside and outside reverberator of modulator of the present invention and Multiple Quantum Well resonant cavity layer provide and electrically contact, and the modulator that triumphant curtain draws then needs separately contact.
4. people such as triumphant Mu La does not recognize that modulator and the incident medium coupling in admittance is so that optical transmission rate and modulation efficiency reach the importance of optimal cases.
By the modulator that the present invention makes, its remarkable advantage is that they can be made under situation about need not by cutting or etching formation minute surface.
In one embodiment, modulator can be that for example diameter is about 10 microns right cylinder.This will provide the transmission mode with the optical fiber matched well of little fibre core, thereby dielectric loss is low.The power density at I/O facet place is little than semiconductor waveguide modulator just, so just can improve power and work and do not cause the facet damage.These performances that also possess in other embodiment of this modulator all are favourable to the purposes such as modulation of the access, optical computing and the laser beam intensity that comprise optical fiber communication, optical data.And the modulator of row arrangement (for example in line or two-dimensional array configuration) is not difficult to make.
Here only proposing said modulator in the mode of explanation, is what possible to make the multiple modifications and changes of this modulator in the scope of this instructions appended claims.
Claims (14)
1, a kind of electrooptic modulator, has such structure: the monocrystal chip that a certain refractive index is arranged, dispose the inner reflector that first group of oriented growth single crystalline layer forms on the substrate successively, one resonant cavity layer and the external reflection device that forms by second group of oriented growth single crystalline layer, this structure at least a portion (is one or more layers of inner reflector, substrate and resonant cavity layer) conduct electricity, and be P-type conduction or n type conduction, another part at least of this structure (being one or more layers of external reflection device and resonant cavity layer) conducts electricity, and be n type conduction or P-type conduction, but its conduction type is different with a described part; This structure also comprises respectively first and second electric installations that contact as resistance with the described part of described structure and described another part, it is characterized in that: when applying reverse biased for described electric installation, basically there is not electric current to flow through, so that electric field is added to described resonant cavity layer two ends, thereby change the refractive index that described electric field changes the resonant cavity layer, thereby the modulation light by modulator in use correspondingly by changing described bias voltage.
2, the electrooptic modulator described in claim 1 is characterized in that: the plural reflectivity amplitude of inner reflector is
r
i＝r
1exp（jΦ
1）
R wherein
1Be included in the size of the reflectivity of each thin layer in the inner reflector, Φ
1Be the phase shift under this reflectivity; The plural reflectivity amplitude of external reflection device is
r
o＝r
2exp（jΦ
2）
R wherein
2Be the size of the reflectivity of each layer of external reflection device, Φ
2Be the phase shift under this reflectivity.
3, electrooptic modulator as claimed in claim 1 or 2, it is characterized in that, inner reflector adjoins the refractive index Nb of that layer of resonant cavity layer and the refractive index Na that the external reflection device is close to that one deck of resonant cavity layer, is in refractive index Nr(V under any particular job voltage with the resonant cavity layer at modulator) have a following relation:
If Na＜Nr(V), Nb＜Nr(V) then.
4, electrooptic modulator as claimed in claim 1 or 2, it is characterized in that, inner reflector adjoins that one deck refractive index Nb of resonant cavity layer and the refractive index Na that the external reflection device is close to that one deck of resonant cavity layer, locates refractive index Nr(V under any specific voltage at the modulator two ends with the resonant cavity layer) have a following relation:
If Na＞Nr(V), Nb＞Nr(V) then.
5, electrooptic modulator as claimed in claim 1, it is characterized in that, each layer of forming reverberator, its refractive index and thickness are changeable, so that make its synthesis cycle that reaches that the optical thickness of λ/2 or its odd-multiple be arranged, wherein λ is the long wave long value in a series of presumable discrete wavelength of this special modulator light to be modulated.
6, the described electrooptic modulator of claim 1 is characterized in that, the composition of reverberator, thereby the refractive index of reverberator are to change continuously or change piecemeal, so that make the synthesis cycle that reaches have the optical thickness of λ/2 or its odd-multiple.
7, electrooptic modulator as claimed in claim 1 is characterized in that, described substrate and thereafter each material layer be some by being selected from the monocrystalline that the material that comprises gallium, aluminium and arsenic element family is made, these materials mix with special ratios in specific thin layer.
8, electrooptic modulator as claimed in claim 1 is characterized in that, substrate and thereafter each material layer be some by being selected from the monocrystalline that the material that comprises gallium, indium, arsenic and P elements family is made, these materials mix with specific ratio in specific thin layer.
9, electrooptic modulator as claimed in claim 1 is characterized in that, substrate and thereafter each material layer be some by being selected from the monocrystalline that the material that comprises gallium, indium, aluminium, arsenic and antimony element family is made, these materials mix with specific ratio in specific thin layer.
10, require 1 described electrooptic modulator as profit, it is characterized in that, substrate and thereafter each material layer be some by being selected from the monocrystalline that the material that comprises mercury, cadmium, manganese and tellurium element family is made, these materials mix with specific ratio in specific thin layer.
11, electrooptic modulator as claimed in claim 1 is characterized in that, substrate and thereafter each material layer be some by being selected from the monocrystalline that the material that comprises lead, sulphur, tellurium and selenium family of elements is made, these materials mix with specific ratio in specific thin layer.
12, electrooptic modulator as claimed in claim 1 is characterized in that, described each thin layer can be made up of thinner ordering structure or multi-quantum pit structure layer again.
13, electrooptic modulator as claimed in claim 1 is characterized in that, described each thin layer is series classification on forming.
14, the electrooptic modulator described in claim 12 is characterized in that, its operation wavelength is chosen corresponding to the wavelength that excites the subarea that is right after below the basic energy gap of resonant cavity layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPI619088 | 1988-01-06 | ||
| AUPI6190/88 | 1988-01-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1034072A CN1034072A (en) | 1989-07-19 |
| CN1023839C true CN1023839C (en) | 1994-02-16 |
Family
ID=3772705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN89100122A Expired - Fee Related CN1023839C (en) | 1988-01-06 | 1989-01-06 | Electrooptic modulator |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0397690A4 (en) |
| JP (1) | JPH05501923A (en) |
| KR (1) | KR900700859A (en) |
| CN (1) | CN1023839C (en) |
| AU (1) | AU2900789A (en) |
| WO (1) | WO1989006369A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU653261B2 (en) * | 1988-01-06 | 1994-09-22 | Telstra Corporation Limited | Current injection modulator |
| AT571U1 (en) * | 1995-02-27 | 1996-01-25 | Slt Labinstruments Gmbh | TEMPERATURE DEVICE |
| KR20090130266A (en) * | 2005-06-20 | 2009-12-21 | 니폰덴신뎅와 가부시키가이샤 | Electro-optical device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3210980C2 (en) * | 1981-04-01 | 1986-11-20 | Nippon Telegraph And Telephone Corp., Tokio/Tokyo | Optical switching element and optical switching matrix |
| US4525687A (en) * | 1983-02-28 | 1985-06-25 | At&T Bell Laboratories | High speed light modulator using multiple quantum well structures |
| EP0225112B1 (en) * | 1985-11-27 | 1992-08-12 | AT&T Corp. | Optical logic element |
| GB8610129D0 (en) * | 1986-04-25 | 1986-05-29 | Secr Defence | Electro-optical device |
-
1988
- 1988-12-20 WO PCT/AU1988/000489 patent/WO1989006369A1/en not_active Ceased
- 1988-12-20 AU AU29007/89A patent/AU2900789A/en not_active Abandoned
- 1988-12-20 EP EP19890900790 patent/EP0397690A4/en not_active Withdrawn
- 1988-12-20 JP JP89500688A patent/JPH05501923A/en active Pending
- 1988-12-20 KR KR1019890701663A patent/KR900700859A/en not_active Ceased
-
1989
- 1989-01-06 CN CN89100122A patent/CN1023839C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0397690A4 (en) | 1991-09-11 |
| JPH05501923A (en) | 1993-04-08 |
| WO1989006369A1 (en) | 1989-07-13 |
| EP0397690A1 (en) | 1990-11-22 |
| AU2900789A (en) | 1989-08-01 |
| CN1034072A (en) | 1989-07-19 |
| KR900700859A (en) | 1990-08-17 |
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| C53 | Correction of patent for invention or patent application | ||
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| C53 | Correction of patent for invention or patent application | ||
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| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: AUSTRALIAN REMOTE TELECOMMUNICATION CORP. TO: AUSTRALIA AND OVERSEA REMOTE COMMUNICATION CO., LTD. |
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| C53 | Correction of patent for invention or patent application | ||
| CB02 | Change of applicant information |
Applicant after: Australian Telecommunications Commission Applicant before: Australia & overseas long distance Telecommunications Ltd |
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| COR | Change of bibliographic data |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |