TWI886916B - Manufacturing method for photonic crystal surface-emitting laser - Google Patents

Abstract

A photonic crystal surface-emitting laser structure, including a circuit substrate, a first electrode layer, an ohmic contact layer, a first semiconductor layer, a first active layer, a photonic crystal layer, a second active layer, and a third semiconductor layer and the second electrode layer. The photonic crystal layer includes a second semiconductor layer and a plurality of microstructures. Each microstructure is a light-transmitting conductor. The microstructures are located in the second semiconductor layer and are arranged at intervals. The second electrode layer has a notch, and a part of the surface of the third semiconductor layer is exposed in the notch and defines a light surface. The invention also provides a method for manufacturing a photonic crystal surface-emitting laser structure.

Description

Method for manufacturing photonic crystal surface emitting laser structure

The present invention relates to a surface-emitting laser structure, and in particular to a surface-emitting laser structure having a photonic crystal between two active light-emitting layers.

With the development of technology, the application of semiconductor laser light sources has gradually played an important role in human life. In addition to edge-emitting lasers and vertical cavity surface-emitting lasers, photonic crystal surface-emitting lasers have also been developed recently. They have the advantages of long cavity length, small light divergence angle, and long transmission distance.

It is known that when a photonic crystal surface-emitting laser emits laser light, only a portion of the laser energy can be utilized, resulting in a low efficiency of photoelectric conversion and a waste of energy.

Therefore, how to improve the efficiency of photonic crystal surface-emitting lasers by improving the structural design to overcome the above-mentioned defects has become one of the important issues that the industry wants to solve.

The technical problem to be solved by the present invention is to provide a photonic crystal surface-emitting laser structure in view of the shortcomings of the prior art, including a circuit substrate, a first electrode layer, an ohmic contact layer, a first semiconductor layer, a first active layer, a photonic crystal layer, a second active layer, a third semiconductor layer and a second electrode layer. The first electrode layer is located on the circuit substrate, and the first electrode layer has a receiving groove. The ohmic contact layer is located in the receiving groove. The first semiconductor layer is located on the first electrode layer and covers the ohmic contact layer. The first active layer is located on the first semiconductor layer, and the first active layer includes at least one first light-emitting layer. The photonic crystal layer includes: a second semiconductor layer and a plurality of microstructures, each microstructure being a light-transmitting conductor. The second semiconductor layer includes a top, a base and a filling portion. The plurality of microstructures are located on the base and arranged at intervals. The filling portion fills the gap between two adjacent microstructures. The top portion is connected to the filling portion, covering the filling portion and the plurality of microstructures. The second active layer is located on the photonic crystal layer, and the second active layer includes at least one second light-emitting layer. The third semiconductor layer is located on the second active layer. The second electrode layer is located on the third semiconductor layer, and the second electrode layer has a notch. A portion of the surface of the third semiconductor layer is exposed in the notch to define a light-emitting surface.

According to a feasible implementation scheme, there are multiple first light-emitting layers, multiple second light-emitting layers, and the distance between the first light-emitting layers farthest from the photonic crystal layer in the first active layer is less than or equal to 1μm; the distance between the second light-emitting layers farthest from the photonic crystal layer in the second active layer is less than or equal to 1μm.

According to a feasible implementation scheme, the photonic crystal surface-emitting laser structure also includes a protective layer, which laterally covers the second electrode layer, the third semiconductor layer, the second active layer, the photonic crystal layer and the first active layer, and the protective layer also covers the light-emitting surface.

According to a feasible implementation scheme, the shape of the microstructure is a column.

The present invention also provides a photonic crystal surface-emitting laser structure, which includes a circuit substrate, a first electrode layer, an ohmic contact layer, a first semiconductor layer, a first active layer, a tunneling junction, a second active layer, a photonic crystal layer, a third semiconductor layer and a second electrode layer. The first electrode layer is located on the circuit substrate, and the first electrode layer has a receiving groove. The ohmic contact layer is located in the receiving groove. The first semiconductor layer is located on the first electrode layer and covers the ohmic contact layer. The first active layer is located on the first semiconductor layer, and the first active layer includes at least one first light-emitting layer. The tunneling junction is located on the first active layer. The second active layer is located on the tunneling junction, and the second active layer includes at least one second light-emitting layer. The photonic crystal layer includes: a second semiconductor layer and a plurality of microstructures, each microstructure is a light-transmitting conductor, the second semiconductor layer includes a top, a base and a filling part, a plurality of microstructures are located on the base and arranged at intervals, the filling part fills the gap between two adjacent microstructures, the top is connected to the filling part, and covers the filling part and the plurality of microstructures. The third semiconductor layer is located on the photonic crystal layer. The second electrode layer is located on the third semiconductor layer, and the second electrode layer has a notch, and a portion of the surface of the third semiconductor layer is exposed in the notch to define the light-emitting surface.

According to a feasible implementation scheme, the photonic crystal surface-emitting laser structure also includes a protective layer, which laterally covers the second electrode layer, the photonic crystal layer, the second active layer, the tunneling junction and the first active layer, and the protective layer also covers the light-emitting surface.

The present invention further provides a method for manufacturing a photonic crystal surface-emitting laser structure, which includes: providing a composite light-emitting layer, the composite light-emitting layer sequentially including an ohmic contact layer, a first semiconductor layer, a first active layer, a second semiconductor layer and a light-transmitting conductive layer, the first active layer including at least one first light-emitting layer. Etching the light-transmitting conductive layer to form a plurality of microstructures, the plurality of microstructures being located on the second semiconductor layer and arranged at intervals. The second semiconductor layer is subjected to a regrowth step to form a top portion and a filling portion, wherein the filling portion fills the gap between two adjacent microstructures, the top portion is connected to the filling portion, covers the filling portion and the plurality of microstructures, and the second semiconductor layer, the plurality of microstructures, the filling portion and the top portion form a photonic crystal layer. A second active layer is disposed on the photonic crystal layer, wherein the second active layer includes at least one second light-emitting layer. A third semiconductor layer is disposed on the second active layer. The first active layer, the photonic crystal layer, the second active layer and the third semiconductor layer are laterally etched so that the two sides of the first active layer and the first semiconductor layer respectively form a discontinuous structure. An upper electrode layer is arranged on the third semiconductor layer, the upper electrode layer has a notch, a portion of the surface of the third semiconductor layer is exposed in the notch, and a light-emitting surface is defined. A protective layer is arranged to cover the upper electrode layer, the third semiconductor layer, the second active layer, the photonic crystal layer, and the first active layer along the step structure. A lower electrode layer is arranged below the first semiconductor layer, the lower electrode layer has a receiving groove, and the ohmic contact layer is received.

The present invention also provides a method for manufacturing a photonic crystal surface-emitting laser structure, which includes: providing a composite light-emitting layer, the composite light-emitting layer sequentially including an ohmic contact layer, a first semiconductor layer, a first active layer, a tunneling junction, a second active layer, a second semiconductor layer and a light-transmitting conductive layer, the first active layer including at least one first light-emitting layer, and the second active layer including at least one second light-emitting layer. Etching the light-transmitting conductive layer to form a plurality of microstructures, the plurality of microstructures being located on the second semiconductor layer and arranged at intervals. The second semiconductor layer is subjected to a regrowth step to form a top portion and a filling portion, the filling portion fills the gap between two adjacent microstructures, the top portion is connected to the filling portion, covers the filling portion and the plurality of microstructures, and the second semiconductor layer, the plurality of microstructures, the filling portion and the top portion form a photonic crystal layer. The third semiconductor layer is disposed on the photonic crystal layer. The first active layer, the tunneling junction, the second semiconductor layer, the photonic crystal layer and the third semiconductor layer are laterally etched so that the two sides of the first active layer and the first semiconductor layer respectively form a discontinuous structure. An upper electrode layer is provided, located on the third semiconductor layer, and the upper electrode layer has a notch, and a portion of the surface of the third semiconductor layer is exposed in the notch to define the light-emitting surface. A protective layer is provided, and covers the upper electrode layer, the third semiconductor layer, the second active layer, the photonic crystal layer and the first active layer along the fault structure. A lower electrode layer is provided, and is located under the first semiconductor layer, and the lower electrode layer has a receiving groove to receive the ohmic contact layer.

One of the beneficial effects of the present invention is that the photonic crystal surface-emitting laser and its manufacturing method provided by the present invention can achieve the maximum range of light resonance in the cavity through the technical solution of "having a photonic crystal layer between the first active layer and the second active layer", thereby enhancing the light output of the light-emitting surface.

According to one embodiment, the photonic crystal surface-emitting laser structure has an ohmic contact layer, so that the current can be concentrated in the light-emitting area.

According to some embodiments, there is a tunneling junction between the first active layer and the second active layer. The tunneling junction is a high refractive index medium layer. The provision of the tunneling junction helps to make the current passing through the laser structure uniform and improve the luminescence efficiency.

Combining the above-mentioned technical effects, the photonic crystal surface-emitting laser of the present invention has a high photoelectric conversion efficiency.

In order to further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only used for reference and description and are not used to limit the present invention.

100: Manufacturing method

200: Manufacturing method

1A-1B: Photonic crystal surface-emitting laser structure

11: Circuit board

12: First electrode layer, lower electrode layer

121: Storage tank

13: Ohm contact layer

14: First semiconductor layer

15: First active layer, first light-emitting layer

16: Photonic crystal layer

16A: light-transmitting conductive layer

16B: light-transmitting conductive layer

161: Second semiconductor layer

1611: Base, second semiconductor layer

1612: Filling section

1613: Top

162: Microstructures

17: Second active layer, second light-emitting layer

18: Third semiconductor layer

181: Bright surface

19: Second electrode layer, upper electrode layer

191: Notch

20: Protective layer

21: Discontinuity structure

22: Tunneling interface

S1-S9: Steps

P1-P8: Steps

Figure 1 is a schematic cross-sectional view of a photonic crystal surface-emitting laser structure according to an embodiment of the present invention.

Figure 2 is a schematic diagram of the process of manufacturing a photonic crystal surface-emitting laser structure according to an embodiment of the present invention.

Figures 3 to 11 are schematic diagrams of the steps corresponding to the embodiment shown in Figure 2.

Figure 12 is a cross-sectional schematic diagram of a photonic crystal surface-emitting laser structure according to an embodiment of the present invention.

Figure 13 is a schematic diagram of the process of manufacturing a photonic crystal surface-emitting laser structure according to an embodiment of the present invention.

Figures 14 to 22 are schematic diagrams of the steps corresponding to the embodiment shown in Figure 13.

The following is a specific embodiment to illustrate the implementation of the "photonic crystal surface-emitting laser structure and its manufacturing method" disclosed in the present invention. Technical personnel in this field can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the attached figures of the present invention are only for simple schematic illustrations and are not depicted according to actual sizes. Please note in advance. The following implementation will further explain the relevant technical content of the present invention in detail, but the disclosed content is not used to limit the scope of protection of the present invention.

It should be understood that although the terms "first", "second", "third" and the like may be used in this article to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used in this article may include any one or more combinations of the related listed items depending on the actual situation.

Please refer to FIG. 1 , which is a schematic cross-sectional view of a photonic crystal surface-emitting laser structure 1A according to an embodiment of the present invention. The photonic crystal surface-emitting laser structure 1A includes a circuit substrate 11, a first electrode layer 12, an ohmic contact layer 13, a first semiconductor layer 14, a first active layer 15, a photonic crystal layer 16, a second active layer 17, a third semiconductor layer 18, and a second electrode layer 19. The first electrode layer 12 is located on the circuit substrate 11, and the first electrode layer 12 has a receiving groove 121. The ohmic contact layer 13 is located in the receiving groove 121. The first semiconductor layer 14 is located on the first electrode layer 12, covering the ohmic contact layer 13. The first active layer 15 is located on the first semiconductor layer 14, and the first active layer 15 includes at least one first light-emitting layer 15. The photonic crystal layer 16 includes a second semiconductor layer 161 and a plurality of microstructures 162, each microstructure 162 is a light-transmitting conductor, the second semiconductor layer 161 includes a top portion 1613, a base portion 1611 and a filling portion 1612, the plurality of microstructures 162 are located on the base portion 1611 and arranged at intervals, the filling portion 1612 fills the gap between two adjacent microstructures 162, and the top portion 1613 connects the filling portion 1612, and covers the filling portion 1612 and the plurality of microstructures 162. The second active layer 17 is located on the photonic crystal layer 16, and the second active layer 17 includes at least one second light-emitting layer 17. The third semiconductor layer 18 is located on the second active layer 17. The second electrode layer 19 is located on the third semiconductor layer 18, and the second electrode layer 19 has a notch 191. A portion of the surface of the third semiconductor layer 18 is exposed in the notch 191, defining a light-emitting surface 181. In other words, the light emitted by the first active layer 15 and the second active layer 17 is emitted from the light-emitting surface 181 after resonance in the photonic crystal layer 16.

The first semiconductor layer 14, the second semiconductor layer 161 and the third semiconductor layer 18 are epitaxial film layers, and the materials doped therein may be indium (In), gallium (Ga), aluminum (Al), arsenic (As), phosphorus (P), nitrogen (N) or antimony (Sb), and the present invention is not limited thereto. According to some embodiments, the first semiconductor layer 14 is undoped, and the first semiconductor layer 14 and the second semiconductor layer 161 have different electrical properties, for example, the first semiconductor layer 14 is an i-type semiconductor layer, and the second semiconductor layer 161 is a P-type semiconductor layer. According to some embodiments, the third semiconductor layer 18 is a dielectric layer.

According to some embodiments, the materials of the first electrode layer 12 and the second electrode layer 19 may be titanium (Ti), platinum (Pt), nickel (Ni), germanium (Ge), gold (Au), aluminum (Al), tin (Sn) or zinc (Zn), but are not limited thereto.

According to some embodiments, the luminescent wavelength range of the first active layer 15 and the second active layer 17 is 280-3000nm. The light-transmitting conductive material may be indium tin oxide (ITO). However, it is not limited thereto. According to some embodiments, the light-transmitting conductive material is indium zinc oxide (IZO). According to some embodiments, the thickness of the light-transmitting conductive material (i.e., the length in the longitudinal direction) ranges from 140-160nm. Preferably, it is 150nm. According to the embodiment shown in FIG. 1 , the microstructure 162 is in the shape of a column, and there is a gap between adjacent columns, which is filled by the filling portion 1612.

In this embodiment, the first active layer 15 includes a first light-emitting layer 15, and the second active layer 17 includes a second light-emitting layer 17. However, the present invention is not limited thereto. According to some embodiments, the first active layer 15 includes a plurality of first light-emitting layers 15, and the second active layer 17 includes a plurality of second light-emitting layers 17, wherein the distance between the first light-emitting layers 15 farthest from the photonic crystal layer 16 in the first active layer 15 is less than or equal to 1 μm. The distance between the second light-emitting layers 17 farthest from the photonic crystal layer 16 in the second active layer 17 is less than or equal to 1 μm.

In this embodiment, the photonic crystal surface-emitting laser structure 1A further includes a protective layer 20, which laterally covers the second electrode layer 19, the third semiconductor layer 18, the second active layer 17, the photonic crystal layer 16 and the first active layer 15, and the protective layer 20 also covers the light-emitting surface 181. According to some embodiments, the material of the protective layer 20 is made of silicon oxide (SiO ₂ ). In this embodiment, a portion of the second electrode layer 19 is exposed from the protective layer 20 to receive current injection.

According to the embodiment shown in FIG. 1 , a photonic crystal layer 16 is provided between the first active layer 15 and the second active layer 17 , and the light resonates in the cavity within the maximum range, thereby enhancing the light output of the light output surface 181 .

According to the embodiment shown in FIG. 1 , the photonic crystal surface-emitting laser structure 1A has an ohmic contact layer 13, so that the current can be concentrated in the light-emitting area (corresponding to the light-emitting surface 181).

In addition, according to this embodiment, the circuit substrate 11 used is a metal-ceramic substrate or a composite metal substrate, and is used in conjunction with the ohmic contact layer 13 to enhance the heat dissipation effect of the photonic crystal surface-emitting laser structure 1A. It can also enable the photonic crystal surface-emitting laser structure 1A to maintain good luminescence performance under high current injection.

Please refer to Figures 2 to 12. Figure 2 is a schematic diagram of the process of manufacturing a photonic crystal surface-emitting laser structure 100 according to an embodiment of the present invention. Figures 3 to 12 are schematic diagrams of steps corresponding to the embodiment shown in Figure 2. The manufacturing method 100 of the photonic crystal surface-emitting laser structure includes: steps S1 to S9.

Step S1: Provide a composite light-emitting layer, which includes an ohmic contact layer 13, a first semiconductor layer 14, a first active layer 15, a second semiconductor layer 161 and a light-transmitting conductive layer 16A in sequence. As shown in FIG1 , the first active layer 15 may include one or more first light-emitting layers 15. The ohmic contact layer 13 is made of metal and semiconductor materials. For example, it is made of P-type aluminum gallium nitride. The first semiconductor layer 14 and the second semiconductor layer 161 have different electrical properties. For example, the first semiconductor layer 14 is an i-type semiconductor, and the second semiconductor layer 161 is a P-type semiconductor. The light-transmitting conductive layer 16A is made of, for example, silicon nitride (SiNx) or indium tin oxide (ITO). According to some embodiments, the light-transmitting conductive layer 16A includes a plurality of horizontally disposed strip structures with two adjacent strip structures spaced apart. According to some embodiments, the thickness of the light-transmitting conductive layer 16A is 150nm.

Step S2: Etching the light-transmitting conductive layer 16A to form a plurality of microstructures 162, which are located on the second semiconductor layer 161 and arranged at intervals. There are many ways to etch the light-transmitting conductive layer 16A, as shown in FIG. 4 and FIG. 5, a PC board 40 (such as PMMA) is set on the light-transmitting conductive layer 16A as a mask, and a photoresist pattern is made on the light-transmitting conductive layer 16A by E-Beam, and the light-transmitting conductive layer 16A is further etched, and adjacent microstructures 162 have gaps. According to some embodiments, the light-transmitting conductive layer 16A can also be made into a photoresist pattern by nanoimprint lithography (NIL). Then, the light-transmitting conductive layer 16A is etched to form a plurality of microstructures 162 on the light-transmitting conductive layer 16A.

Step S3: Perform a re-crystallization step on the second semiconductor layer 161, for example, by metal-organic chemical vapor deposition (MOCVD) to form a top portion 1613 and a filling portion 1612. The filling portion 1612 fills the gap between the two adjacent microstructures 162. The top portion 1613 connects to the filling portion 1612, covers the filling portion 1612 and the plurality of microstructures 162, and the second semiconductor layer 161, the plurality of microstructures 162, the filling portion 1612 and the top portion 1613 form a photonic crystal layer 16, as shown in FIG6.

Step S4: Dispose the second active layer 17 on the photonic crystal layer 16. The second active layer 17 may include one or more second light-emitting layers 17. Step S5: Dispose the third semiconductor layer 18 on the second active layer 17, as shown in FIG7.

Step S6: Laterally etch the first active layer 15, the photonic crystal layer 16, the second active layer 17 and the third semiconductor layer 18, so that the two sides of the first active layer 15 and the first semiconductor layer 14 form a discontinuity structure 21, as shown in FIG8.

Step S7: An upper electrode layer 19 is disposed on the third semiconductor layer 18. The upper electrode layer 19 has a notch 191. A portion of the surface of the third semiconductor layer 18 is exposed in the notch 191. The portion of the surface defines a light-emitting surface 181, as shown in FIG9 .

Step S8: Set up a protective layer 20 to cover the upper electrode layer 19, the third semiconductor layer 18, the second active layer 17, the photonic crystal layer 16 and the first active layer 15 along the fault structure 21, as shown in Figure 10.

Step S9: Set the lower electrode layer 12 below the first semiconductor layer 14. The lower electrode layer 12 has a receiving groove 121 to receive the ohmic contact layer 13, as shown in FIG11. There are many ways to set the lower electrode layer 12. According to some embodiments, the lower electrode layer 12 is set by flip chip bonding technology (Flip Chip), etching the ohmic contact layer 13, and then removing the carrier and colloid (not shown) used by the flip chip bonding technology to complete the manufacture of the photonic crystal surface emitting laser structure. In addition, according to this embodiment, a circuit substrate 11 is further set below the lower electrode layer 12, and its structure is similar to the embodiment shown in FIG1. According to some embodiments, the material of the upper electrode layer 19 and the lower electrode layer 12 may be titanium (Ti), platinum (Pt), nickel (Ni), germanium (Ge), gold (Au), aluminum (Al), tin (Sn) or zinc (Zn), but is not limited thereto.

Please refer to FIG. 12, which is a schematic cross-sectional view of a photonic crystal surface-emitting laser structure 1B of an embodiment of the present invention. The photonic crystal surface-emitting laser structure 1B includes a circuit substrate 11, a first electrode layer 12, an ohmic contact layer 13, a first semiconductor layer 14, a first active layer 15, a tunneling junction 22, a second active layer 17, a photonic crystal layer 16, a third semiconductor layer 18, and a second electrode layer 19. The embodiment shown in FIG. 12 is different from the embodiment shown in FIG. 1 in that a tunneling junction 22 is provided between the first active layer 15 and the second active layer 17, and the photonic crystal is located on the second active layer 17. The first active layer 15 includes one or more first light-emitting layers 15, and the second active layer 17 includes one or more second light-emitting layers 17.

Please refer to the above description for the circuit substrate 11, the first electrode layer 12, the ohmic contact layer 13, the first semiconductor layer 14, the first active layer 15, the second active layer 17, the photonic crystal layer 16, the third semiconductor layer 18 and the second electrode layer 19. The tunneling junction 22 is a high refractive index medium layer. The provision of the tunneling junction 22 helps to make the current passing through the laser structure uniform and improve the light-emitting efficiency.

Please refer to Figures 13 to 22. Figure 13 is a schematic diagram of the process of manufacturing a photonic crystal surface-emitting laser structure 200 according to an embodiment of the present invention. Figures 14 to 22 are schematic diagrams of steps corresponding to the embodiment shown in Figure 13. The manufacturing method 200 of the photonic crystal surface-emitting laser structure includes: Steps P1 to P8.

Step P1: Provide a composite light-emitting layer, which includes an ohmic contact layer 13, a first semiconductor layer 14, a first active layer 15, a tunneling junction 22, a second active layer 17, a second semiconductor layer 1611 and a light-transmitting conductive layer 16B in sequence. According to some embodiments, the thickness of the light-transmitting conductive layer 16B is 150nm. The material of the light-transmitting conductive layer 16B is silicon nitride (SiNx) or indium tin oxide (ITO, Indium Tin Oxide), as shown in FIG. 14. The first active layer 15 may include one or more first light-emitting layers 15. The second active layer 17 may include one or more first light-emitting layers 17.

Step P2: Etching the light-transmitting conductive layer 16B to form a plurality of microstructures 162, which are located on the second semiconductor layer 1611 and arranged at intervals. The etching method can refer to the above description, refer to Figures 15 and 16, for example, a PC board 40 (such as PMMA) is set on the light-transmitting conductive layer 16B as a mask, and a photoresist pattern is made on the light-transmitting conductive layer 16B by E-Beam, and the light-transmitting conductive layer 16B is further etched to form a plurality of microstructures 162, and the adjacent microstructures 162 have gaps. According to some embodiments, the photoresist pattern can also be made on the light-transmitting conductive layer 16B by nanoimprint lithography (NIL). Then, the light-transmitting conductive layer 16B is etched to form a plurality of microstructures 162 on the light-transmitting conductive layer 16B.

Step P3: Perform a re-crystallization step on the second semiconductor layer 1611 to form a top portion 1613 and a filling portion 1612. The filling portion 1612 fills the gap between two adjacent microstructures 162. The top portion 1613 connects to the filling portion 1612 and covers the filling portion 1612 and the multiple microstructures 162. The second semiconductor layer 1611, the multiple microstructures 162, the filling portion 1612 and the top portion 1613 form a photonic crystal layer 16, as shown in FIG17.

Step P4: Set the third semiconductor layer 18 on the photonic crystal layer 16, as shown in Figure 18. Step P5: Laterally etch the first active layer 15, the tunneling junction 22, the second semiconductor layer 1611, the photonic crystal layer 16 and the third semiconductor layer 18, so that the two sides of the first active layer 15 and the first semiconductor layer 14 form a discontinuity structure 21, as shown in Figure 19.

Step P6: Set the upper electrode layer 19, which is located on the third semiconductor layer 18. The upper electrode layer 19 has a notch 191. A portion of the surface of the third semiconductor layer 18 is exposed in the notch 191, defining the light-emitting surface 181, as shown in FIG. 20.

Step P7: Set up a protective layer 20 to cover the upper electrode layer 19, the third semiconductor layer 18, the second active layer 17, the photonic crystal layer 16 and the first active layer 15 along the fault structure 21, as shown in Figure 21.

Step P8: Set the lower electrode layer 12, which is located below the first semiconductor layer 14. The lower electrode layer 12 has a receiving groove 121 to accommodate the ohmic contact layer 13. There are many ways to set the lower electrode layer 12. According to some embodiments, after the flip chip bonding technology (Flip Chip) is used and the ohmic contact layer 13 is etched, the lower electrode layer 12 is set and the carrier and colloid (not shown) used by the flip chip bonding technology are removed, and the photonic crystal surface-emitting laser structure is completed. In addition, according to this embodiment, a circuit substrate 11 is further set below the lower electrode layer 12. Please refer to the embodiment shown in Figure 12 for its structure.

In the aforementioned method for manufacturing the photonic crystal surface-emitting laser structure, according to some embodiments, there are multiple first light-emitting layers and multiple second light-emitting layers (not shown), and the distance between the first light-emitting layers farthest from the photonic crystal layer 16 in the first active layer 15 is less than or equal to 1μm. The distance between the second light-emitting layers farthest from the photonic crystal layer 16 in the second active layer 17 is less than or equal to 1μm.

[Beneficial effects of the embodiment]

One of the beneficial effects of the present invention is that the photonic crystal surface-emitting laser and its manufacturing method provided by the present invention can achieve the maximum range of light resonance in the cavity through the technical solution of "having a photonic crystal layer between the first active layer and the second active layer", thereby enhancing the light output of the light-emitting surface.

According to one embodiment, the photonic crystal surface emitting laser structure has an ohmic contact layer, so that the current can be concentrated in the light-emitting area. Furthermore, according to some embodiments, the circuit substrate is a metal-ceramic substrate or a composite metal substrate, and is used with an ohmic contact layer to enhance the heat dissipation effect of the photonic crystal surface emitting laser structure. It can also enable the photonic crystal surface emitting laser structure to maintain good luminescence performance under high current injection.

According to some embodiments, there is a tunneling junction between the first active layer and the second active layer. The tunneling junction is a high refractive index medium layer. The provision of the tunneling junction helps to make the current passing through the laser structure uniform and improve the luminescence efficiency.

Combining the above-mentioned technical effects, the photonic crystal surface-emitting laser of the present invention has a high photoelectric conversion efficiency.

The above disclosed contents are only the preferred feasible embodiments of the present invention, and do not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the contents of the specification and drawings of the present invention are included in the scope of the patent application of the present invention.

1A: Photonic crystal surface-emitting laser structure

11: Circuit board

12: First electrode layer

121: Storage tank

13: Ohm contact layer

14: First semiconductor layer

15: First active layer, first light-emitting layer

16: Photonic crystal layer

161: Second semiconductor layer

1611: Base

1612: Filling section

1613: Top

162: Microstructures

17: Second active layer, second light-emitting layer

18: Third semiconductor layer

181: Bright surface

19: Second electrode layer, upper electrode layer

191: Notch

20: Protective layer

Claims (6)

A method for manufacturing a photonic crystal surface-emitting laser structure comprises: providing a composite light-emitting layer, wherein the composite light-emitting layer sequentially comprises an ohmic contact layer, a first semiconductor layer, a first active layer, a second semiconductor layer and a light-transmitting conductive layer, wherein the first active layer comprises at least a first light-emitting layer; etching the light-transmitting conductive layer to form a plurality of microstructures, wherein the plurality of microstructures are located on the first semiconductor layer; The second semiconductor layer is arranged on the second semiconductor layer and arranged at intervals; the second semiconductor layer is subjected to a re-crystallization step to form a top portion and a filling portion, the filling portion fills the gap between the two adjacent microstructures, the top portion is connected to the filling portion, covers the filling portion and the multiple microstructures, and the second semiconductor layer, the multiple microstructures, the filling portion and the top portion form a photonic crystal layer; a second active layer is provided On the photonic crystal layer, the second active layer includes at least one second light-emitting layer; a third semiconductor layer is disposed on the second active layer; the first active layer, the photonic crystal layer, the second active layer and the third semiconductor layer are laterally etched so that two sides of the first active layer and the first semiconductor layer form a discontinuity structure respectively; an upper electrode layer is disposed on the third semiconductor layer, and the upper electrode layer The electrode layer has a notch, and a portion of the surface of the third semiconductor layer is exposed in the notch to define a light-emitting surface; a protective layer is provided to cover the upper electrode layer, the third semiconductor layer, the second active layer, the photonic crystal layer and the first active layer along the step structure; and a lower electrode layer is provided below the first semiconductor layer, and the lower electrode layer has a receiving groove to receive the ohmic contact layer. A method for manufacturing a photonic crystal surface-emitting laser structure as described in claim 1, wherein the number of the first light-emitting layers is multiple, the number of the second light-emitting layers is multiple, the distance between the first light-emitting layers farthest from the photonic crystal layer in the first active layer is less than or equal to 1µm; and the distance between the second light-emitting layers farthest from the photonic crystal layer in the second active layer is less than or equal to 1µm. A method for manufacturing a photonic crystal surface-emitting laser structure as described in claim 1, wherein the shape of the microstructure is a column. A method for manufacturing a photonic crystal surface emitting laser structure comprises: providing a composite light emitting layer, the composite light emitting layer sequentially comprising an ohmic contact layer, a first semiconductor layer, a first active layer, a tunneling junction, a second active layer, a second semiconductor layer and a light-transmitting conductive layer, wherein the first active layer comprises at least one first light emitting layer, and the second active layer comprises at least one second light emitting layer; The first semiconductor layer is etched to form a plurality of microstructures, wherein the plurality of microstructures are located on the second semiconductor layer and arranged at intervals; the second semiconductor layer is re-grown to form a top portion and a filling portion, wherein the filling portion fills the gap between two adjacent microstructures, the top portion is connected to the filling portion, and covers the filling portion and the plurality of microstructures, wherein the second semiconductor layer, the plurality of microstructures, The filling portion and the top portion form a photonic crystal layer; a third semiconductor layer is disposed on the photonic crystal layer; the first active layer, the tunneling junction, the second semiconductor layer, the photonic crystal layer and the third semiconductor layer are laterally etched so that two sides of the first active layer and the first semiconductor layer form a discontinuity structure respectively; an upper electrode layer is disposed on the third semiconductor layer, and the upper electrode layer is disposed on the third semiconductor layer. The electrode layer has a notch, and a portion of the surface of the third semiconductor layer is exposed in the notch to define a light-emitting surface; a protective layer is provided to cover the upper electrode layer, the third semiconductor layer, the second active layer, the photonic crystal layer and the first active layer along the step structure; and a lower electrode layer is provided, located under the first semiconductor layer, and the lower electrode layer has a receiving groove to receive the ohmic contact layer. A method for manufacturing a photonic crystal surface-emitting laser structure as described in claim 4, wherein the number of the first light-emitting layers is multiple, the number of the second light-emitting layers is multiple, the distance between the first light-emitting layers farthest from the photonic crystal layer in the first active layer is less than or equal to 1µm; and the distance between the second light-emitting layers farthest from the photonic crystal layer in the second active layer is less than or equal to 1µm. A method for manufacturing a photonic crystal surface-emitting laser structure as described in claim 4, wherein the shape of the microstructure is a column.

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