CN102075839A - MEMS microphone chip and MEMS microphone using same - Google Patents
MEMS microphone chip and MEMS microphone using same Download PDFInfo
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- CN102075839A CN102075839A CN2009102232572A CN200910223257A CN102075839A CN 102075839 A CN102075839 A CN 102075839A CN 2009102232572 A CN2009102232572 A CN 2009102232572A CN 200910223257 A CN200910223257 A CN 200910223257A CN 102075839 A CN102075839 A CN 102075839A
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- 239000003990 capacitor Substances 0.000 claims abstract description 109
- 239000012528 membrane Substances 0.000 claims abstract description 46
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000009827 uniform distribution Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
本发明公开了一种MEMS传声器芯片，其包括基底层和设置在基底层上且相互串联连接的多个电容器，所述多个电容器包括一个第一电容器和至少一个第二电容器；所述第一电容器包括一个固定的第一极板部(130)和一个振动膜(110)，所述第二电容器包括两个保持固定的电极。根据上述结构，通过调整第二电容器的电容值，在IC芯片提供的驱动电压不变的情况下，可以容易实现IC芯片和MEMS传声器芯片的电压匹配，降低了制造MEMS传声器时的成本。
The invention discloses a MEMS microphone chip, which includes a base layer and a plurality of capacitors arranged on the base layer and connected in series with each other, the plurality of capacitors include a first capacitor and at least one second capacitor; the first The capacitor includes a fixed first plate portion (130) and a vibrating membrane (110), and the second capacitor includes two electrodes that remain fixed. According to the above structure, by adjusting the capacitance value of the second capacitor, the voltage matching between the IC chip and the MEMS microphone chip can be easily realized under the condition that the driving voltage provided by the IC chip remains unchanged, and the cost of manufacturing the MEMS microphone is reduced.
Description
Technical field
The MEMS microphone that the present invention relates to a kind of MEMS microphone chip and adopt this chip.
Background technology
In recent years, along with electronic product volumes such as mobile phone, notebook constantly reduce, performance is more and more higher, correspondingly require the volume of supporting electronic component constantly to reduce and performance and consistency raising.Under this background, the demand of utilizing the MEMS microphone that MEMS (MEMS (micro electro mechanical system)) technology produces is increased fast.A core devices of MEMS microphone is exactly the MEMS microphone chip that utilizes MEMS technology to make, and this chip can be finished sound-electric translation function.
A kind of structure of MEMS microphone chip is for example disclosed in the prior art, the capacitance component that this chip structure comprises a substrate, be arranged on the insulating barrier of this substrate top and be arranged on this insulating barrier top, this capacitance component comprise a vibrating membrane, a fixed polar plate and are arranged on insulating barrier between the two.Particularly, Fig. 1 is the concise and to the point encapsulation schematic diagram of this MEMS microphone chip 1 of expression.As shown in Figure 1, the encapsulating structure of MEMS microphone comprises the metal square groove shape shell 2 and the square wiring board 3 that are provided with the sound hole 21 that is used to receive the external sound signal, and, MEMS microphone chip 1 is installed on the surface of wiring board 3, two electrodes of the capacitor in this MEMS microphone chip are connected on the wiring board 3 by the metal wire (not shown) respectively, and are electrically communicated on the signal processing chip (IC chip) 4 by the circuit on the wiring board 3.
Fig. 2 is the schematic diagram of the circuit connecting relation of MEMS microphone chip 1 in the presentation graphs 1, two utmost points of capacitor C0 in the MEMS microphone chip 1 are electrically connected to IC chip 4, after the processing of the signal of telecommunication through IC chip 4 of this capacitor C0 output, output by the IC chip is sent to external circuit, thereby realizes the function of MEMS microphone product.
But, in aforesaid MEMS microphone chip, because two electrodes itself of capacitor of this MEMS microphone chip do not have electric charge, need to rely on the IC chip that a driving voltage is provided, and the voltage and the MEMS microphone chip required voltage that require the IC chip to provide mate.Therefore, in order to mate different MEMS microphone chips, need the multiple IC chip that different driving voltage can be provided of design, yet the cost of this IC chip is very high, the whole cost that this has just increased substantially MEMS microphone product is unfavorable for the popularization of MEMS microphone product.On the other hand, the pole plate and the spacing between the vibrating membrane of MEMS microphone chip are very little, under some hygrothermal environments, between pole plate and the vibrating membrane leaky takes place easily, even directly be pasted together, thereby the two is conducted, cause the undesired even damage of work of IC chip, so the performance of whole M EMS microphone product also can be affected, cause reliability of products to reduce.
Summary of the invention
In order to solve above-mentioned problems of the prior art, the invention provides and a kind ofly can mate good MEMS microphone chip of IC chip and reliability and the MEMS microphone that adopts this chip easily.
To achieve these goals, a kind of MEMS microphone chip provided by the invention comprises basalis and a plurality of capacitors that are arranged on the basalis and are connected in series mutually, and described a plurality of capacitors comprise one first capacitor and at least one second capacitor; Described first capacitor comprises a fixing pole plate and a vibrating membrane, and described second capacitor comprises two electrodes that are maintained fixed.
In addition, preferred construction can be that described capacitor comprises pole plate layer, vibration rete and the separator between described pole plate layer and vibration rete; An electrode of the vibrating membrane of described first capacitor and described second capacitor is positioned at described vibration rete, and the fixing pole plate of described first capacitor and another electrode of described second capacitor are positioned at described pole plate layer.
In addition, preferred construction can be, the physical connection of an electrode of described first capacitor by being positioned at described pole plate layer or vibration rete and an electrode of described second capacitor realizes being connected in series of first capacitor and second capacitor.
In addition, preferred construction can be, described pole plate layer comprises first blade portion as the fixed electrode of described first capacitor, and around described first blade portion, be uniform-distribution with a plurality of support portions, possess a plurality of dowels corresponding to described support portion as the described vibrating membrane of the movable electrode of described first capacitor across prescribed distance; Described a plurality of dowel is fixed on the top of described a plurality of support portions respectively, and the main part of described vibrating membrane is supported for vacant state.
In addition, preferred construction can be that described dowel has strip or L shaped shape.
In addition, preferred construction can be, described vibrating membrane comprise described first capacitor of the conduct that links into an integrated entity movable electrode part and as the part of a fixed electrode of described second capacitor.
In addition, the present invention also provides a kind of MEMS microphone that comprises the MEMS microphone chip of said structure and constitute.
Owing to adopted technique scheme, by adjusting the capacitance of second capacitor, under the constant situation of driving voltage that the IC chip provides, can realize the voltage matches of IC chip and MEMS microphone chip easily, also can under the situation that the IC chip remains unchanged, adjust the sensitivity of MEMS microphone, reduce multiple IC chip design, produced the waste that causes.In addition; owing to be provided with second capacitor with 2 fixed electrodes; avoided being subjected to the influence of hygrothermal environment to cause first blade portion and the vibrating membrane of first capacitor of MEMS microphone chip to produce the situation of leaking electricity even being sticked together; protect the IC chip, thereby improved the global reliability of MEMS microphone product.
Description of drawings
Fig. 1 is the concise and to the point encapsulation schematic diagram of the existing MEMS microphone chip of expression.
Fig. 2 is the schematic diagram of the circuit connecting relation of the existing MEMS microphone chip of expression.
Fig. 3 is the vertical view of the MEMS microphone chip that relates to of the expression first embodiment of the present invention.
Fig. 4 is the distribution schematic diagram of pole plate layer on the barrier layer of the MEMS microphone chip that relates to of the expression first embodiment of the present invention.
Fig. 5 is the upward view of the MEMS microphone chip that relates to of the expression first embodiment of the present invention.
Fig. 6 be along a-a among Fig. 3 to profile.
Fig. 7 is the schematic diagram that the MEMS microphone chip that relates to of the expression first embodiment of the present invention is installed to the state on the wiring board.
Fig. 8 is the schematic diagram of the circuit connecting relation of the MEMS microphone chip that relates to of the expression first embodiment of the present invention.
Fig. 9 is the vertical view of the MEMS microphone chip that relates to of the expression second embodiment of the present invention.
Figure 10 is the vertical view of the MEMS microphone chip that relates to of the expression third embodiment of the present invention.
Figure 11 be along a-a among Figure 10 to profile.
Embodiment
Below, with specific embodiment the present invention is done further detailed description in conjunction with the accompanying drawings.
For the voltage pairing that solves MEMS microphone chip and IC chip and the problem of electric leakage, adhesion easily, MEMS microphone chip provided by the invention will be arranged on two capacitors of capacitor design for connecting mutually on the basalis, and the following examples will be done more specific description to the specific structural features of MEMS microphone chip provided by the present invention.
(first embodiment)
Fig. 3 is the vertical view of the MEMS microphone chip that relates to of the expression first embodiment of the present invention, Fig. 4 is the distribution schematic diagram of pole plate layer on the barrier layer of the MEMS microphone chip that relates to of the expression first embodiment of the present invention, Fig. 5 is the upward view of the MEMS microphone chip that relates to of the expression first embodiment of the present invention, Fig. 6 be along a-a among Fig. 3 to profile.From these diagrams as can be known, square MEMS microphone chip 1 involving vibrations rete 11, separator 12, fixing pole plate layer 13, barrier layer 14 and basalis 15 successively from top to bottom.
Wherein, basalis 15 is made for single crystal silicon material, and having by hollow out on this basalis 15 is columniform through hole 151 (see figure 6)s, and its inner cavity that forms can be used as the back cavity of MEMS microphone chip.
In addition, in order to guarantee the accuracy of MEMS microphone processing, be provided with barrier layer 14 above the not openwork part of basalis 15, barrier layer 14 is the silica material making.Moreover the shape on this barrier layer 14 is corresponding with the shape of basalis 15, and, on barrier layer 14, also offer the circular hole corresponding and identical shaped with through hole 151.
Be provided with fixing pole plate layer 13 above barrier layer 14, pole plate layer 13 is made for polycrystalline silicon material.Pole plate layer 13 comprises that first blade portion 130, elongated connecting portion 133 and second blade portion, 132, the first blade portion 130 and second blade portion 132 are connected together by this connecting portion 133.First blade portion 130 is positioned at the top of the through hole 151 of basalis 15, and has corresponding with through hole 151 round-shapedly, and it becomes the electrode of the first capacitor C0 in the MEMS microphone chip that the present invention relates to.And, be provided with a plurality of apertures 131 in first blade portion 130, make the air conducting of blade portion 130 upper and lowers of winning, thereby make through hole 151 parts of basalis 15 become the back cavity of MEMS microphone chip 1.And, owing on pole plate 130, be provided with a plurality of apertures, except realizing necessary acoustic efficiency, can also be convenient to discharge the insolated layer materials between pole plate and the vibrating membrane.In addition, be arranged in the electrode that second blade portion 132 on the part beyond the through hole 151 of basalis 15 becomes the second capacitor C1 of MEMS microphone chip.At this,, will do detailed description in the back about first capacitor C0 in the MEMS microphone chip and the structure of the second capacitor C1.
In addition, around first blade portion 130, be provided with three support portions 134, these support portions 134 and first blade portion, 130 interval predetermined distances and highly identical across predetermined distance.
In addition, be provided with the separator 12 of insulating effect on above-mentioned pole plate layer 13 and three support portions 134, separator 12 is that silica material is made.In the present embodiment, separator 12 comprises that several separate the spacer that is provided with and constitute, and these spacers lay respectively at the top of the described support portion 134 and second blade portion 132, and its shape is corresponding with the shape of the support portion 134 and second blade portion 132 respectively.
Above separator 12, be provided with the vibration rete 11 that polycrystalline silicon material is made, vibration rete 11 comprises the vibrating membrane 110 of first blade portion, 130 tops that are arranged at pole plate layer 13 and is arranged at the flat board 113 of second blade portion, 132 tops, and, described vibrating membrane 110 and dull and stereotyped 113 is the members that are separated, described vibrating membrane 110 and dull and stereotyped 113 and pole plate layer 13 between across described separator 12.Vibrating membrane 110 has and first blade portion, 130 corresponding shapes, and be provided with vis-a-vis with this first blade portion 130, in addition, extend outward three long and narrow dowels 111 that are used for fixing this vibrating membrane 110 from the circular body portion of this vibrating membrane 110, the position of these three dowels 111 corresponding respectively three support portions 134.These three dowels 111 are fixed on respectively on the separator 12, make the main part of vibrating membrane 110 be positioned at first blade portion, 130 tops of pole plate layer 13 with vacant state.At this moment, this vibrating membrane 110 becomes another electrode of the first capacitor C0 in the MEMS microphone chip, thereby this vibrating membrane 110 and first blade portion 130 constitute the first capacitor C0.At this, because vibrating membrane 110 is fixed on the top of separator 12 by three long and narrow dowels 111, makes that the main part of vibrating membrane is unsettled and produce vibration, discharge stress simultaneously easily.In addition, second blade portion 132 of flat board 113 that is provided with vis-a-vis across described separator 12 and pole plate layer 13 constitutes the second capacitor C1 of MEMS microphone chips, and at this moment, dull and stereotyped 113 become another electrode of this second capacitor C1.In addition,, also be respectively arranged with metal electric connection point 112,114 on the dowel 111 of vibrating membrane 110 and dull and stereotyped 113, be used for connecting with external circuit for two capacitor C0 are connected with external circuit with C1.
At this, because the vibrating membrane 110 and first blade portion 130 constitute the first capacitor C0, dull and stereotyped 113 and second blade portion 132 constitutes the second capacitor C1, and be connected by connecting portion 133 between first blade portion 130 and second blade portion 132, so form series relationship between the first capacitor C0 and the second capacitor C1.Wherein, when transmitting external voice, vibrating membrane 110 as the electrode of the first capacitor C0 can vibrate, this can cause the capacitance of this first capacitor C0 to change, and fix as the flat board 113 of the electrode of the second capacitor C1, therefore the capacitance of the second capacitor C1 immobilizes.
Fig. 7 is the schematic diagram that the MEMS microphone chip that relates to of the expression first embodiment of the present invention is installed to the state on the wiring board.As shown in Figure 7, the MEMS microphone chip of said structure is installed to after the wiring board 3, the electric connection point 112 of vibrating membrane 110 and dull and stereotyped 113 electric connection point 114 are connected on the wiring board 3 by metal wire 5 respectively.Then, the MEMS microphone chip and the IC chip 4 that will be installed on the wiring board 3 link together again, and have just formed the operating circuit of MEMS microphone shown in Figure 8.
In having the MEMS microphone chip of said structure, under the situation that the employed IC chip 4 of microphone does not change, can be applied to the voltage on the first capacitor C0 by the capacitance adjustment of regulating the second capacitor C1, thereby the MEMS microphone chip is complementary with IC chip 4, so just can reduce the design of a large amount of IC chips and produce burden, save the whole cost of MEMS microphone significantly.And; owing to increased by the second capacitor C1; therefore; even the first capacitor C0 of MEMS microphone chip is subjected to the influence of some hygrothermal environment; and cause its first blade portion 130 and vibrating membrane 110 to produce the electric leakage even the situation that is sticked together; because the protective effect of the second capacitor C1, the IC chip can not be damaged yet, thereby has improved whole M EMS microphone reliability of products.
In addition, two electrodes of the second capacitor C1 that present embodiment relates to are positioned at same one deck with first blade portion and the vibrating membrane of the first capacitor C0 respectively, and its structural design is simple, therefore, the first capacitor C0 and the second capacitor C1 can finish under same technology, do not need to increase extra operation, therefore save manufacturing cost.
Moreover, second blade portion of first blade portion of the first capacitor C0 and the second capacitor C1 interconnects in the present embodiment, make win capacitor and the shared conductive layer of second capacitor, form the effect of two capacitors in series naturally, therefore saved cost of manufacture.
(second embodiment)
Fig. 9 is the vertical view of the MEMS microphone chip that relates to of the expression second embodiment of the present invention.As shown in the drawing, structure with first embodiment is compared, the difference part of the MEMS microphone chip that this second embodiment relates to is, vibrating membrane 110 be shaped as squarish, the substantial middle portion on each limit of this vibrating membrane 110 extends outward four L-shaped dowels 111 certainly.And, with these four L shaped dowels accordingly, around first blade portion 130 on the barrier layer 12, be provided with four support portions 134 across predetermined distance.Adopt this structural vibrations film, its stress is littler, can make the MEMS microphone chip realize better acoustic efficiency.
(the 3rd embodiment)
Figure 10 is the vertical view of the MEMS microphone chip that relates to of the expression third embodiment of the present invention, Figure 11 be along a-a among Figure 10 to profile.Shown in Figure 10,11, compare with the first above-mentioned embodiment, the main distinction point of the MEMS microphone chip that this 3rd embodiment relates to is, vibration rete 11 is set above barrier layer 14, sets gradually separator 12 and pole plate layer 13 above vibration rete 11.
In the present embodiment, vibration rete 11 is made of the vibrating membrane 110 of an integral body.The shape of the separator 12 that is provided with above vibrating membrane 110 is corresponding with barrier layer 14, all has annular shape.
In addition, be arranged at the pole plate layer 13 of separator 12 tops, comprise first blade portion 130 of middle body and be positioned at second blade portion 136 in the outside of this first blade portion 130 around this first blade portion 130, between this first blade portion 130 and second blade portion 136 across the interval of regulation.Wherein, first blade portion 130 is a general square shape, and offers a plurality of apertures 131, and these apertures 131 can make air-flow can run through first blade portion 130, realizing the necessary acoustic efficiency of microphone, but also can discharge the insolated layer materials between first blade portion 130 and the vibrating membrane 110.At this, the counterpart of this first blade portion 130 and vibrating membrane 110 constitutes first capacitor of MEMS microphone chip, to realize the sound-electric translation function of microphone.In addition, the counterpart of second blade portion 136 and vibrating membrane 110 constitutes second capacitor of MEMS microphone chip.
In this 3rd embodiment, the inverted configuration that the position and first embodiment are set of vibration rete 11 and pole plate layer 13, be that vibration rete 11 is between barrier layer 14 and the separator 12, on the separator 12 of pole plate layer 13 above being positioned at, and, be positioned at the electrode of the first capacitor C0 of vibration rete and the electrode of the second capacitor C1 and be interconnected, thereby make first capacitor and second capacitor be in series connection.
In addition, on first blade portion 130 and second blade portion 136, be respectively arranged with and be used for the MEMS microphone chip is connected to electric connection point 137 and electric connection point 138 on the wiring board 3, this MEMS microphone chip is installed to after the wiring board of MEMS microphone, can be connected on the wiring board 3 by electric connection point 137 and electric connection point 138 and metal wire.
Compare with first embodiment, in the structure of the MEMS microphone chip that the 3rd embodiment relates to, two electrodes of the second capacitor C1 are separately positioned on the peripheral part of first blade portion 130 of vibration rete 11 and pole plate layer 13, can utilize the space more fully, make size littler, cost of manufacture is also cheaper.
And, in the MEMS microphone chip that the 3rd embodiment relates to, the first capacitor C0 and the changeless second capacitor C1 of capacitance that exist capacitance to change equally with the vibration of vibrating membrane 110, and this first capacitor and second capacitor are connected mutually, therefore, also can be applied to the voltage on the first capacitor C0 by the capacitance adjustment of regulating the second capacitor C1, thereby the MEMS microphone chip is complementary with IC chip 4, so just can reduce the design of a large amount of IC chips and produce burden, save the whole cost of MEMS microphone significantly.And; owing to increased by the second capacitor C1; therefore; even the first capacitor C0 of MEMS microphone chip is subjected to the influence of some hygrothermal environment; and cause its first blade portion 130 and vibrating membrane 110 to produce the electric leakage even the situation that is sticked together; because the protective effect of the second capacitor C1, the IC chip can not be damaged yet, thereby has improved whole M EMS microphone reliability of products.
In the various embodiments described above, that for example understands parts such as through hole, first blade portion, second blade portion, vibrating membrane, flat board is shaped as circle or squarish, but the present invention does not limit its concrete shape, can adopt ellipse to wait other shapes according to the requirement of MEMS microphone yet.Moreover that for example understands dowel 111 is shaped as strip or shape, but also can adopt other shapes, for example circular arc, spirality etc.
Moreover, in the foregoing description, understand that for example basalis adopts single crystal silicon material, separator to adopt silica material, vibrating membrane and pole plate layer adopt polycrystalline silicon material, but the present invention is not limited to these materials, as long as can realize the function separately of each parts, they also can adopt other material known to make.
In addition, illustrated among above-mentioned first, second embodiment on the extended dowel of self-excited oscillation film electric connection point has been set, but be not limited to this, also can under the prerequisite of the vibration performance that does not influence vibrating membrane, this electric connection point be set in the somewhere of vibrating membrane.
In addition, variable capacitor and the structure that the constant capacitor of capacitance constitutes of a capacitance that comprises mutual series connection has been described in the various embodiments described above, but, also can adopt to comprise between capacitor that capacitor that capacitance is variable and a plurality of capacitance are constant and these capacitors all structures of polyphone, this is mathematical.
On the other hand, the present invention also provides a kind of MEMS microphone, it comprises metal shell, wiring board, MEMS microphone chip and the signal processing chip (IC chip) that sound hole is set, MEMS microphone chip and signal processing chip are realized electric connection by wiring board, and MEMS microphone chip wherein adopts the MEMS microphone chip of the foregoing description record.Because the concrete encapsulating structure of microphone is those skilled in the art to be known and knows, so do not repeat them here.
In the respective embodiments described above of the present invention, to the MEMS microphone chip and adopt shape, material and the architectural feature of the MEMS microphone of this chip all to be limited embodiment and show, the variation of some other shape, material and structure does not change purport of the present invention.Such as: the IC chip can adopt numeral or analog amplifier chip, and this type of adjustment belongs to technology well known to those skilled in the art; Two electrodes of MEMS microphone chip can by metal wire for example gold thread be connected on the wiring board, also can be directly connected to and realize on the IC chip that circuit connects, perhaps can two electrodes be connected to the IC chip by in MEMS microphone chip inside plated-through hole being set, this type of is adjusted does not influence purport of the present invention yet.
Though at the concrete structure of MEMS microphone chip the specific embodiment of the invention has been described above,, under above-mentioned instruction of the present invention, those skilled in the art can carry out various improvement and distortion on the basis of above-mentioned execution mode.It will be understood by those skilled in the art that top specific descriptions just in order to explain purpose of the present invention, are not to be used to limit the present invention.Protection scope of the present invention is limited by claim and equivalent thereof.
Claims (10)
1. a MEMS microphone chip is characterized in that, comprising:
Basalis and a plurality of capacitors that are arranged on the basalis and are connected in series mutually,
Described a plurality of capacitor comprises one first capacitor and at least one second capacitor;
Described first capacitor comprises fixing first blade portion (130) and a vibrating membrane (110), and described second capacitor comprises two electrodes that are maintained fixed.
2. MEMS microphone chip as claimed in claim 1 is characterized in that,
Described capacitor comprises pole plate layer, vibration rete and the separator (12) between described pole plate layer and vibration rete;
An electrode of vibrating membrane of described first capacitor (110) and described second capacitor is positioned at described vibration rete, and fixing first blade portion (130) of described first capacitor and another electrode of described second capacitor are positioned at described pole plate layer.
3. MEMS microphone chip as claimed in claim 1 or 2 is characterized in that,
The physical connection of an electrode of described first capacitor by being positioned at described pole plate layer or vibration rete and an electrode of described second capacitor realizes being connected in series of first capacitor and second capacitor.
4. MEMS microphone chip as claimed in claim 2 is characterized in that,
Described pole plate layer comprises first blade portion (130) as the fixed electrode of described first capacitor, and around described first blade portion, be uniform-distribution with a plurality of support portions (134), possess a plurality of dowels (111) corresponding to described support portion as the described vibrating membrane (110) of the movable electrode of described first capacitor across prescribed distance;
Described a plurality of dowel is fixed on the top of described a plurality of support portion (134) respectively, and the main part of described vibrating membrane (110) is supported for vacant state.
5. MEMS microphone chip as claimed in claim 4 is characterized in that,
Described dowel has strip or L shaped shape.
6. MEMS microphone chip as claimed in claim 2 is characterized in that,
Described vibrating membrane comprise described first capacitor of the conduct that links into an integrated entity movable electrode part and as the part of a fixed electrode of described second capacitor.
7. MEMS microphone chip as claimed in claim 6 is characterized in that,
The part of the fixed electrode of described second capacitor of the conduct of pole plate layer is around prescribed distance is centered around as first blade portion of the fixed electrode of described first capacitor.
8. MEMS microphone chip as claimed in claim 2 is characterized in that,
Between described basalis and described capacitor, be provided with the barrier layer.
9. MEMS microphone chip as claimed in claim 2 is characterized in that,
Also be provided with a plurality of apertures (131) on the described pole plate (130).
10. MEMS microphone is characterized in that:
Comprise as arbitrary described MEMS microphone chip in the claim 1～9.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103491490A (en) * | 2013-08-16 | 2014-01-01 | 上海集成电路研发中心有限公司 | MEMS microphone structure and manufacturing method thereof |
| CN105047172A (en) * | 2015-09-15 | 2015-11-11 | 京东方科技集团股份有限公司 | Shift register, gate driving circuit, display screen and driving method of display screen |
| WO2016192361A1 (en) * | 2015-05-29 | 2016-12-08 | 歌尔声学股份有限公司 | Quasi differential capacitive mems pressure sensor and manufacturing method thereof |
| CN107005772A (en) * | 2014-11-13 | 2017-08-01 | 因文森斯公司 | Form the integration packaging and manufacture method of wide sensing gap MEMS condenser microphone |
| WO2019004933A1 (en) * | 2017-06-28 | 2019-01-03 | Agency For Science, Technology And Research | Acoustic device and method of forming the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022685A (en) * | 2007-03-23 | 2007-08-22 | 胡维 | Condenser miniature silicon microphone and preparative method |
| CN101204699A (en) * | 2006-12-20 | 2008-06-25 | 先宁电子科技股份有限公司 | Ultrasonic transducer and frequency stabilization method thereof |
| WO2009073743A1 (en) * | 2007-12-03 | 2009-06-11 | Kolo Technologies Inc. | Capacitive micromachined ultrasonic transducer with voltage feedback |
| CN201345731Y (en) * | 2009-01-10 | 2009-11-11 | 宁波鑫丰泰电器有限公司 | Electret capacitor microphone |
| CN201797597U (en) * | 2009-11-20 | 2011-04-13 | 歌尔声学股份有限公司 | MEMS microphone chip and MEMS microphone adopting same |
-
2009
- 2009-11-20 CN CN200910223257.2A patent/CN102075839B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101204699A (en) * | 2006-12-20 | 2008-06-25 | 先宁电子科技股份有限公司 | Ultrasonic transducer and frequency stabilization method thereof |
| CN101022685A (en) * | 2007-03-23 | 2007-08-22 | 胡维 | Condenser miniature silicon microphone and preparative method |
| WO2009073743A1 (en) * | 2007-12-03 | 2009-06-11 | Kolo Technologies Inc. | Capacitive micromachined ultrasonic transducer with voltage feedback |
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