CN203279172U - MEMS (Micro-Electro-Mechanical System) microphone - Google Patents
MEMS (Micro-Electro-Mechanical System) microphone Download PDFInfo
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- CN203279172U CN203279172U CN 201320236653 CN201320236653U CN203279172U CN 203279172 U CN203279172 U CN 203279172U CN 201320236653 CN201320236653 CN 201320236653 CN 201320236653 U CN201320236653 U CN 201320236653U CN 203279172 U CN203279172 U CN 203279172U
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- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000002360 preparation method Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000005236 sound signal Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Abstract
The utility model provides an MEMS microphone which comprises a substrate, back pole plates, a diaphragm, insulating layers, supporting layers and electrodes. The back pole plates comprise a first back pole plate and a second back pole plate, the insulating layers comprise a first insulating layer, a second insulating layer and a third insulating layer, and the supporting layers comprise a first supporting layer and a second supporting layer. The first insulating layer is arranged between the substrate and the first back pole plate, and the second insulating layer is arranged over the first back pole plate; the first supporting layer is arranged between the second insulating layer and the diaphragm, and the second supporting layer is arranged between the diaphragm and the third insulating layer; the second back pole plate is arranged on the third insulating layer; and the electrodes which connect an internal circuit of the MEMS microphone with an external circuit are respectively arranged on the first and second back pole plates. The MEMS microphone provided by the utility model can solve problems of the microphone including low linearity, low harmonic distortion value and short circuit.
Description
Technical Field
The utility model relates to a MEMS microphone technical field, more specifically relates to a can reduce MEMS microphone linear distortion, reduce the MEMS microphone of total harmonic distortion value.
Background
With the progress of society and the development of technology, in recent years, the volume of electronic products such as mobile phones and notebook computers is continuously reduced, and people have higher and higher performance requirements on the portable electronic products, so that the volume of electronic parts matched with the portable electronic products is continuously reduced, and the performance and consistency are continuously improved. MEMS microphones integrated by MEMS (Micro-Electro-Mechanical-System, abbreviated as MEMS) technology are beginning to be applied to electronic products such as mobile phones and notebook computers in batches, and the package volume thereof is smaller than that of the conventional electret microphone, so that the MEMS microphones are favored by most microphone manufacturers.
At present, most of microphone structures are designed by combining a single diaphragm and a single back plate, and fig. 1 is a schematic structural diagram of a conventional MEMS microphone with a diaphragm below and a back plate above; as shown in fig. 1, a backplate 1 is above a diaphragm 2, and a support layer 3 is provided between the backplate 1 and the diaphragm 2. FIG. 2 is a schematic structural diagram of a prior art MEMS microphone with a diaphragm on top and a back plate on bottom; as shown in fig. 2, the diaphragm 2 is above the backplate 1, and a support layer 3 is disposed between the diaphragm 2 and the backplate 1. In the existing microphone structure, a supporting layer is disposed between a single diaphragm and a single backplate, the linearity of the microphone is low, and the THD Value (Total Harmonic Distortion) of the MEMS microphone is large.
SUMMERY OF THE UTILITY MODEL
In view of the above problems, it is an object of the present invention to provide a MEMS microphone to solve the problems of low microphone linearity and low harmonic distortion value.
The utility model provides a MEMS microphone, including basement, back plate, vibrating diaphragm, insulating layer, supporting layer and electrode; the back polar plate comprises a first back polar plate and a second back polar plate; the insulating layer includes a first insulating layer, a second insulating layer, and a third insulating layer; the support layer comprises a first support layer and a second support layer; the first insulating layer is arranged between the substrate and the first back plate, and the second insulating layer is arranged above the first back plate; the first supporting layer is arranged between the second insulating layer and the vibrating diaphragm, and the second supporting layer is arranged between the vibrating diaphragm and the third insulating layer; the second back plate is arranged above the third insulating layer; electrodes for communicating the internal circuit with the external circuit of the MEMS microphone are respectively arranged on the first back plate and the second back plate.
In addition, it is preferable that a plurality of through holes are provided in the first back plate and the second back plate; the through holes on the first back plate and the second back plate are respectively in one-to-one correspondence with the through holes on the first insulating layer and the second insulating layer.
In addition, it is preferable that air gaps through which the diaphragm vibrates are formed between the diaphragm disposed between the first support layer and the second support layer and between the second insulating layer and the third insulating layer, respectively.
According to the above technical solution, the MEMS microphone of the present invention adopts a dual-back-plate structure, and the vibrating diaphragm is disposed between the upper and lower back-plate, and this design structure can reduce the linear distortion of the MEMS microphone and reduce the total harmonic distortion value of the MEMS microphone by the mutual compensation between the vibrating diaphragm and the distance between the upper and lower back-plate; due to the addition of the insulating layer, the short circuit between the vibrating diaphragm and the back plate can be avoided, and the realization of the sound-electricity conversion is not influenced.
Drawings
Other objects and results of the present invention will become more apparent and more readily appreciated as the same becomes better understood by reference to the following description and appended claims, taken in conjunction with the accompanying drawings. In the drawings:
FIG. 1 is a schematic structural diagram of a conventional MEMS microphone with a diaphragm below and a backplate above;
FIG. 2 is a schematic structural diagram of a prior art MEMS microphone with a diaphragm on top and a back plate on bottom;
fig. 3 is a schematic structural diagram of a MEMS microphone according to an embodiment of the present invention.
Wherein the reference numerals include: the diaphragm structure comprises a back plate 1, a diaphragm 2, a supporting layer 3, a substrate 4, a first insulating layer 5, a first back plate 6, a second insulating layer 7, a first supporting layer 8, a second supporting layer 9, a third insulating layer 10, a second back plate 11, an electrode 12, a through hole 13 and an air gap 14.
The same reference numbers in all figures indicate similar or corresponding features or functions.
Detailed Description
Specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 3 is according to the utility model discloses MEMS microphone structure schematic diagram, as shown in fig. 3, the utility model provides a MEMS microphone, from up being down in proper order: the diaphragm comprises a substrate 4, a first insulating layer 5, a first back plate 6, a second insulating layer 7, a first supporting layer 8, a diaphragm 2, a second supporting layer 9, a third insulating layer 10, a second back plate 11 and an electrode 12.
Wherein, the back polar plate comprises a first back polar plate 6 and a second back polar plate 11; the insulating layers include a first insulating layer 5, a second insulating layer 7, and a third insulating layer 10; the support layers comprise a first support layer 8 and a second support layer 9.
A first insulating layer 5 is provided between the substrate 4 and the first back plate 6, and a second insulating layer 7 is provided above the first back plate 6.
A first supporting layer 8 is arranged between the second insulating layer 7 and the diaphragm 2 and a second supporting layer 9 is arranged between the diaphragm 2 and a third insulating layer 10.
The third insulating layer 10 is disposed below the second back plate 11; electrodes 12 are provided on the first back plate 6 and the second back plate 11 for connecting the first back plate 6 and the second back plate 11 with an external circuit.
A plurality of through holes 13 are provided on the first and second back plates 6 and 11, and correspond one-to-one to the through holes (not labeled in fig. 3) on the second and third insulating layers 7 and 10.
The through hole in the middle of the substrate 4 is used for forming a back cavity of the MEMS microphone chip, so that a sound signal can pass through the through hole, pass through the through holes 13 of the back plate and the insulating layer, reach the air gap 14, and act on the diaphragm 2, so that the diaphragm 2 vibrates, and thus act together with the first back plate 6 and the second back plate 11 to generate an electrical signal, thereby implementing sound-electricity conversion.
It can be seen that the MEMS microphone with the dual-back-plate structure (i.e. the first back-plate 6 and the second back-plate 11) in which the vibrating diaphragm is disposed between the upper back-plate and the lower back-plate can reduce the linear distortion of the MEMS microphone by means of the mutual compensation of the distance between the vibrating diaphragm and the upper back-plate and the lower back-plate.
In the embodiment of the present invention, the electrode 12 is a thin film layer made of gold element material, and the gold thin film is disposed between the first back plate 6 and the second back plate 11 by evaporation method for connecting the first back plate 6 and the second back plate 11 with an external circuit.
In a specific embodiment of the present invention, the supporting layer is made of polyethylene oxide material, and is used for supporting the vibrating diaphragm and the two back plates.
The substrate 4 is made of a polysilicon material, and a through hole for sound to enter is formed in the substrate 4, and the through hole can be square or circular and is flexibly determined according to the specific requirements of the MEMS microphone product.
The first insulating layer 5 is silicon dioxide generated by the reaction of silicon and an oxidant through thermal oxidation of the substrate 4; the oxidizing agent is adsorbed by the surface of the substrate 4, diffuses into the substrate 4, and reacts at the contact interface between the silicon dioxide and silicon to form new silicon dioxide, and the contact interface is generated by gradually advancing to the deep layer.
The first back plate 6 is disposed above the first insulating layer 5, the second insulating layer 7 is disposed above the first back plate, then the polyethylene oxide is formed into the first supporting layer 8 by chemical deposition, and the polyethylene oxide is simultaneously deposited and filled into the second insulating layer 7 and the through hole of the first back plate 6.
Then, the diaphragm 2 is deposited over the support layer, and the deposited diaphragm 2 is etched to form two holes, one large hole and one small hole.
Next, a layer of polyethylene oxide is deposited on the diaphragm 2 as the second support 9, and the polyethylene oxide is also deposited and filled in the two etched large holes and small holes on the diaphragm 2.
Then, a third insulating layer 10 and a second back plate 11 are arranged on the second support 9, and the second insulating layer 7, the first support layer 8, the second support layer 9, the third insulating layer 10 and the second back plate 11 are subjected to photoetching or etching at one end of the large hole of the diaphragm 2 to form a large hole connected with the first back plate 6.
Then, an electrode 12 is deposited on the second back plate 11 by an evaporation method, and meanwhile, the electrode is deposited on the first back plate 6 connected with the hole by the evaporation method; the metal element of the electrode 12 is gold, and the second back plate 11 and the first back plate 6 are used for connecting with an external circuit.
Finally, the substrate 4 and the first insulating layer 5 are etched to form a through hole through which the sound signal passes; simultaneously, etching the two supporting layers to form an air gap 14 between the vibrating diaphragm and the two insulating layers; and etching the two supporting layers corresponding to the small hole ends of the vibrating diaphragm 2 while etching the supporting layers to form two communicated holes, and then performing corrosion release, thereby completing the manufacture of the MEMS microphone double-back-plate structure.
Above-mentioned embodiment of preparation technology has described more meticulously the utility model provides a production process flow of MEMS microphone of two back plate structures sets up the vibrating diaphragm between two back plate and changes the defect with the distance between the MENS microphone of improving single back plate structure, reduces the THD value of MEMS microphone.
In addition, the insulating layer arranged between the two back plates (the second insulating layer 7 is arranged above the first back plate 6, and the third insulating layer 10 is arranged below the second back plate 11) can also prevent the first back plate 6 and the second back plate 11 from short-circuiting with the diaphragm 2, and avoid affecting the realization of sound-electricity conversion.
The utility model discloses an in the embodiment, sound signal can reach air gap 14 through the perforating hole, through the through-hole 13 of back plate and insulating layer, acts on to vibrating diaphragm 2, makes vibrating diaphragm 2 produce the vibration, and when vibrating diaphragm 2 produced the vibration by a wide margin, can touch two back plate, the increase of two insulating layers avoids back plate and vibrating diaphragm direct linking to each other, can not take place short circuit phenomenon to vibrating diaphragm 2 and first back plate 6 and second back plate 11 act together and produce the signal of telecommunication, realize the sound-electric conversion.
It can be seen from the above embodiments that, the MEMS microphone provided by the present invention adopts a structure of dual back plates, the vibrating diaphragm is disposed between the upper and lower back plates, and this design structure reduces the distance between the vibrating diaphragm and the upper and lower back plates, can reduce the linear distortion of the MEMS microphone, and reduces the total harmonic distortion value of the MEMS microphone; and because the increase of insulating layer, can avoid vibrating diaphragm and two back plates to take place the short circuit to guarantee the realization of acoustoelectric conversion.
The MEMS microphone according to the present invention is described above by way of example with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that various modifications may be made to the MEMS microphone of the present invention without departing from the scope of the invention. Therefore, the scope of the present invention should be determined by the content of the appended claims.
Claims (3)
1. An MEMS microphone comprises a substrate, a back plate, a diaphragm, an insulating layer, a supporting layer and an electrode; it is characterized in that the preparation method is characterized in that,
the back polar plate comprises a first back polar plate and a second back polar plate; the insulating layer includes a first insulating layer, a second insulating layer, and a third insulating layer; the support layer comprises a first support layer and a second support layer; wherein,
the first insulating layer is arranged between the substrate and the first back plate, and the second insulating layer is arranged above the first back plate;
the first supporting layer is arranged between the second insulating layer and the diaphragm, and the second supporting layer is arranged between the diaphragm and the third insulating layer;
the second back plate is arranged above the third insulating layer;
the electrodes for communicating the internal circuit and the external circuit of the MEMS microphone are respectively arranged on the first back plate and the second back plate.
2. The MEMS microphone of claim 1,
a plurality of through holes are formed in the first back plate and the second back plate;
the through holes in the first back plate and the second back plate are in one-to-one correspondence with the through holes in the first insulating layer and the second insulating layer respectively.
3. The MEMS microphone according to claim 1, wherein air gaps, in which the diaphragm vibrates, are formed between the diaphragm disposed between the first support layer and the second insulating layer and the third insulating layer, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320236653 CN203279172U (en) | 2013-05-03 | 2013-05-03 | MEMS (Micro-Electro-Mechanical System) microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320236653 CN203279172U (en) | 2013-05-03 | 2013-05-03 | MEMS (Micro-Electro-Mechanical System) microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203279172U true CN203279172U (en) | 2013-11-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320236653 Expired - Lifetime CN203279172U (en) | 2013-05-03 | 2013-05-03 | MEMS (Micro-Electro-Mechanical System) microphone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203279172U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113810A (en) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and preparation method thereof and electronic device |
| CN107360526A (en) * | 2016-05-09 | 2017-11-17 | 上海微联传感科技有限公司 | Silicon microphone and its manufacture method |
| CN108600928A (en) * | 2018-04-20 | 2018-09-28 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
| CN113949978A (en) * | 2020-07-17 | 2022-01-18 | 通用微(深圳)科技有限公司 | Sound collection device, sound processing device and method, device and storage medium |
| CN114205722A (en) * | 2020-09-17 | 2022-03-18 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN114205721A (en) * | 2020-09-17 | 2022-03-18 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| WO2022135213A1 (en) * | 2020-12-25 | 2022-06-30 | 歌尔微电子股份有限公司 | Mems sensor chip, microphone, and electronic device |
-
2013
- 2013-05-03 CN CN 201320236653 patent/CN203279172U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113810A (en) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and preparation method thereof and electronic device |
| CN107360526A (en) * | 2016-05-09 | 2017-11-17 | 上海微联传感科技有限公司 | Silicon microphone and its manufacture method |
| CN108600928A (en) * | 2018-04-20 | 2018-09-28 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
| CN108600928B (en) * | 2018-04-20 | 2024-05-31 | 杭州士兰集成电路有限公司 | MEMS device and method of manufacturing the same |
| CN113949978A (en) * | 2020-07-17 | 2022-01-18 | 通用微(深圳)科技有限公司 | Sound collection device, sound processing device and method, device and storage medium |
| CN114205722A (en) * | 2020-09-17 | 2022-03-18 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN114205721A (en) * | 2020-09-17 | 2022-03-18 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| WO2022135213A1 (en) * | 2020-12-25 | 2022-06-30 | 歌尔微电子股份有限公司 | Mems sensor chip, microphone, and electronic device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20200616 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131106 |
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| CX01 | Expiry of patent term |