CN101976700A - Post-cleaning technology of silicon wafer - Google Patents
Post-cleaning technology of silicon wafer Download PDFInfo
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- CN101976700A CN101976700A CN2010102382375A CN201010238237A CN101976700A CN 101976700 A CN101976700 A CN 101976700A CN 2010102382375 A CN2010102382375 A CN 2010102382375A CN 201010238237 A CN201010238237 A CN 201010238237A CN 101976700 A CN101976700 A CN 101976700A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 238000004140 cleaning Methods 0.000 title claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims 3
- 210000002268 wool Anatomy 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 abstract description 18
- 238000005260 corrosion Methods 0.000 abstract description 11
- 230000007797 corrosion Effects 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 11
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 238000005247 gettering Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明涉及太阳能电池生产方法技术领域，尤其是一种硅片的后清洗工艺，其具有如下步骤：a.将多晶硅片硅片制绒、扩散，得到25～80ohm/Sq的均匀扩散区；b.再用酸溶液进行腐蚀，酸溶液中：HF体积浓度占1.6％～4.5％，HNO3体积浓度占20％～30％，CH3COOH体积浓度占33％～39％，其余为H2O，将腐蚀时间控制在20～180秒，温度为15～25℃。本发明硅片的后清洗工艺，通过优化溶液配比，可精确控制溶液的反应速率，而且硅片表面的反射率没有提高，从而提高了太阳能电池的效率。The invention relates to the technical field of solar cell production methods, in particular to a post-cleaning process for silicon wafers, which has the following steps: a. Texturing and diffusing polycrystalline silicon wafers to obtain a uniform diffusion area of 25-80 ohm/Sq; b. . Then use acid solution for corrosion, in the acid solution: HF volume concentration accounts for 1.6% to 4.5%, HNO 3 volume concentration accounts for 20% to 30%, CH 3 COOH volume concentration accounts for 33% to 39%, and the rest is H 2 O , control the corrosion time at 20-180 seconds, and the temperature at 15-25°C. The post-cleaning process of the silicon chip of the present invention can precisely control the reaction rate of the solution by optimizing the solution ratio, and the reflectivity of the surface of the silicon chip is not improved, thereby improving the efficiency of the solar cell.
Description
技术领域technical field
本发明涉及太阳能电池生产方法技术领域，尤其是一种硅片的后清洗工艺。The invention relates to the technical field of solar cell production methods, in particular to a post-cleaning process for silicon wafers.
背景技术Background technique
多晶硅太阳能电池的效率总体上没有单晶硅太阳电池的高，这主要是由于两个原因，一方面多晶硅材料本身的少数载流子寿命没有单晶硅的高，另一方面目前的酸法制绒技术的陷光效果没有单晶碱法制绒好。在目前的传统工艺中，要缩小多晶硅太阳能电池与单晶硅太阳电池之间效率上的差距，一方面可以通过吸杂将多晶硅材料寿命提高一些，另一方面吸杂之后的清洗要尽可能的降低或不影响反射率。The efficiency of polycrystalline silicon solar cells is generally not as high as that of monocrystalline silicon solar cells. This is mainly due to two reasons. On the one hand, the minority carrier lifetime of polycrystalline silicon materials is not as high as that of monocrystalline silicon, and on the other hand, the current acid texturing The light trapping effect of the technology is not as good as that of the single crystal alkali method. In the current traditional process, to narrow the gap in efficiency between polycrystalline silicon solar cells and monocrystalline silicon solar cells, on the one hand, the life of polycrystalline silicon materials can be improved by gettering; Reduce or not affect reflectivity.
目前广泛使用的酸腐蚀溶液是以HF-HNO3为基础的水溶液体系，为了控制化学反应的剧烈程度，有时还加入一些其他的化学品。但是，基本的化学反应是不变的，大致的蚀刻机制是HNO3(一种氧化剂)腐蚀，在硅片表面形成了一层SiO2，然后这层SiO2在HF酸的作用下去除。酸对硅的腐蚀速度与晶粒取向无关，因此酸腐蚀又称为各向同性腐蚀。The acid corrosion solution widely used at present is an aqueous system based on HF-HNO 3 . In order to control the intensity of the chemical reaction, some other chemicals are sometimes added. However, the basic chemical reaction remains the same, and the general etching mechanism is HNO 3 (an oxidant) corrosion, forming a layer of SiO 2 on the surface of the silicon wafer, and then removing this layer of SiO 2 under the action of HF acid. The corrosion rate of acid to silicon has nothing to do with the grain orientation, so acid corrosion is also called isotropic corrosion.
发明内容Contents of the invention
本发明要解决的技术问题是：为了解决扩散吸杂之后的清洗不影响反射率的技术问题，本发明提供一种硅片的后清洗工艺。The technical problem to be solved by the present invention is: in order to solve the technical problem that the cleaning after diffusion gettering does not affect the reflectivity, the present invention provides a post-cleaning process for silicon wafers.
本发明解决其技术问题所采用的技术方案是：一种硅片的后清洗工艺，其具有如下步骤：The technical solution adopted by the present invention to solve the technical problems is: a post-cleaning process for a silicon chip, which has the following steps:
a.将多晶硅片硅片制绒、扩散，得到25～80ohm/Sq的均匀扩散区；a. Texturing and diffusing polycrystalline silicon wafers to obtain a uniform diffusion area of 25-80 ohm/Sq;
b.为了降低表面浓度和结深或刻蚀掉表面杂质富集区，再用酸溶液进行腐蚀，酸溶液中：HF体积浓度占1.6％～4.5％，HNO3体积浓度占20％～30％，CH3COOH体积浓度占33％～39％，其余为H2O，将腐蚀时间控制在20～180秒，温度为15～25℃，刻蚀速率为0.002～0.02um/s。b. In order to reduce the surface concentration and junction depth or etch away the surface impurity-enriched area, then use acid solution for corrosion. In the acid solution: HF volume concentration accounts for 1.6% to 4.5%, and HNO 3 volume concentration accounts for 20% to 30%. , the volume concentration of CH 3 COOH accounts for 33%-39%, and the rest is H 2 O. The etching time is controlled at 20-180 seconds, the temperature is 15-25°C, and the etching rate is 0.002-0.02um/s.
作为优选：一种硅片的后清洗工艺：As preferred: a post-cleaning process for silicon wafers:
a.将多晶硅片硅片制绒、扩散，得到45ohm/Sq的均匀扩散区；a. Texture and diffuse the polycrystalline silicon wafer to obtain a uniform diffusion area of 45ohm/Sq;
b.再用酸溶液进行腐蚀，酸溶液中：HF体积浓度占2.3％，HNO3体积浓度占21％，CH3COOH体积浓度占33％，其余为H2O，温度为18℃。b. Then use acid solution to corrode, in the acid solution: the volume concentration of HF is 2.3%, the volume concentration of HNO 3 is 21%, the volume concentration of CH 3 COOH is 33%, the rest is H 2 O, and the temperature is 18°C.
作为另一优选：一种硅片的后清洗工艺：As another preference: a post-cleaning process for silicon wafers:
a.将多晶硅片硅片制绒、扩散，得到70ohm/Sq的均匀扩散区；a. Texture and diffuse polycrystalline silicon wafers to obtain a uniform diffusion area of 70ohm/Sq;
b.再用酸溶液进行腐蚀，酸溶液中：HF体积浓度占3.1％，HNO3体积浓度占20.3％，CH3COOH体积浓度占38％，其余为H2O，温度为18℃b. Then use acid solution for corrosion, in the acid solution: HF volume concentration accounts for 3.1%, HNO 3 volume concentration accounts for 20.3%, CH 3 COOH volume concentration accounts for 38%, the rest is H 2 O, and the temperature is 18°C
本发明的有益效果是，本发明硅片的后清洗工艺，通过优化溶液配比，可精确控制溶液的反应速率，而且硅片表面的反射率没有提高。The beneficial effect of the invention is that the reaction rate of the solution can be precisely controlled by optimizing the solution ratio in the post-cleaning process of the silicon wafer, and the reflectivity of the silicon wafer surface is not improved.
具体实施方式Detailed ways
实施例1Example 1
取P型多晶硅片，电阻率：2.5Ωcm，Take a P-type polysilicon wafer, resistivity: 2.5Ωcm,
硅片经制绒、扩散，其方块电阻为45ohm/Sq，后放入体积比浓度为HF：2.3％，HNO3：31％，CH3COOH：33％，其余为H2O的混酸溶液中，溶液温度控制在18℃，则溶液的腐蚀速率为0.0125um/s，且硅片表面反射率没有提高。After the silicon wafer is textured and diffused, its square resistance is 45ohm/Sq, and then put into a mixed acid solution with a volume ratio concentration of HF: 2.3%, HNO3: 31%, CH3COOH: 33%, and the rest is H2O . Controlled at 18°C, the corrosion rate of the solution is 0.0125um/s, and the surface reflectance of the silicon wafer does not increase.
实施例2：Example 2:
取P型多晶硅片，电阻率：0.5Ωcm，Take a P-type polysilicon wafer, resistivity: 0.5Ωcm,
硅片经制绒、高低温吸杂，其方块电阻为70ohm/Sq，后放入体积比浓度为HF：3.1％，HNO3：20.3％，CH3COOH：38％，其余为H2O的混酸溶液中，溶液温度控制在18℃，则溶液的腐蚀速率为0.004um/s，且硅片表面反射率没有提高。After the silicon wafer is textured, high and low temperature gettering, its square resistance is 70ohm/Sq, and then put into the mixed acid solution whose volume ratio concentration is HF: 3.1%, HNO3: 20.3%, CH3COOH: 38%, and the rest is H 2 O , the temperature of the solution is controlled at 18°C, the corrosion rate of the solution is 0.004um/s, and the reflectivity of the silicon wafer surface does not increase.
Claims (3)
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102382375A CN101976700B (en) | 2010-07-28 | 2010-07-28 | Post-cleaning technology of silicon wafer |
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| CN2010102382375A CN101976700B (en) | 2010-07-28 | 2010-07-28 | Post-cleaning technology of silicon wafer |
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| CN101976700A true CN101976700A (en) | 2011-02-16 |
| CN101976700B CN101976700B (en) | 2011-12-07 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586034A (en) * | 2011-12-30 | 2012-07-18 | 常州天合光能有限公司 | Cleaning fluid for adhering crystal bar and process for adhering bar by using cleaning fluid |
| CN102623558A (en) * | 2012-03-27 | 2012-08-01 | 山东力诺太阳能电力股份有限公司 | Process for preparing emitter without dead layer by felting after acid process |
| CN102703903A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Alkali texture making technology |
| CN102776515A (en) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | Wet etching process for improving emitter square resistance |
| CN103394484A (en) * | 2013-08-02 | 2013-11-20 | 常州时创能源科技有限公司 | Cleaning technology after polycrystalline silicon solar cell silicon wafer acid texturing |
| CN107170845A (en) * | 2017-05-12 | 2017-09-15 | 中国科学院宁波材料技术与工程研究所 | A kind of wet method prepares the pyramidal method of corners |
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| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| CN101409313A (en) * | 2008-11-19 | 2009-04-15 | 张根发 | Method for preparing silicon solar battery pile face in magnetic field |
| CN101562207A (en) * | 2008-04-14 | 2009-10-21 | 黄麟 | Crystalline silicon solar battery |
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2010
- 2010-07-28 CN CN2010102382375A patent/CN101976700B/en active Active
Patent Citations (4)
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|---|---|---|---|---|
| CN1042275A (en) * | 1984-09-04 | 1990-05-16 | 德克萨斯仪器股份有限公司 | Method of making a solar cell array |
| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| CN101562207A (en) * | 2008-04-14 | 2009-10-21 | 黄麟 | Crystalline silicon solar battery |
| CN101409313A (en) * | 2008-11-19 | 2009-04-15 | 张根发 | Method for preparing silicon solar battery pile face in magnetic field |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586034A (en) * | 2011-12-30 | 2012-07-18 | 常州天合光能有限公司 | Cleaning fluid for adhering crystal bar and process for adhering bar by using cleaning fluid |
| CN102623558A (en) * | 2012-03-27 | 2012-08-01 | 山东力诺太阳能电力股份有限公司 | Process for preparing emitter without dead layer by felting after acid process |
| CN102623558B (en) * | 2012-03-27 | 2014-07-16 | 山东力诺太阳能电力股份有限公司 | Process for preparing emitter without dead layer by felting after acid process |
| CN102703903A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Alkali texture making technology |
| CN102776515A (en) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | Wet etching process for improving emitter square resistance |
| CN103394484A (en) * | 2013-08-02 | 2013-11-20 | 常州时创能源科技有限公司 | Cleaning technology after polycrystalline silicon solar cell silicon wafer acid texturing |
| CN107170845A (en) * | 2017-05-12 | 2017-09-15 | 中国科学院宁波材料技术与工程研究所 | A kind of wet method prepares the pyramidal method of corners |
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