CN101556887A - 碳纳米管场发射显示器的制备方法 - Google Patents
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- H01J31/123—Flat display tubes
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Abstract
本发明提供一种碳纳米管场发射显示器的制备方法,其包括以下步骤:提供一基底,在基底上沉积与显示器的显示点阵相对应的阴极电极;形成催化剂层,即催化剂粉末自组装于阴极电极上;生成碳纳米管,即在催化剂层的辅助作用下,在阴极电极上生长碳纳米管;形成绝缘层,即在基底上形成一绝缘层,该绝缘层上具有与阴极电极相对应的微孔;形成栅极电极,即在绝缘层表面沉积栅极电极;以及封装显示器,即提供一荧光屏,将荧光屏与基底封接,形成碳纳米管场发射显示器。该碳纳米管场发射显示器的制备方法利用自组装方式将催化剂粉末接合到基底上,形成催化剂层,进而可均匀且选择性地生长碳纳米管,制备亮度分布均匀的碳纳米管场发射显示器。
Description
技术领域
本发明涉及一种平板显示器的制备方法,尤其涉及一种碳纳米管场发射显示器的制备方法。
背景技术
碳纳米管场发射显示器是平板显示器的一种,通过施加电场使碳纳米管放电轰击荧光粉而产生图像。然,碳纳米管的生长难以控制,且分布不均,故难以得到较佳的画面品质。
发明内容
鉴于此,有必要提供一种碳纳米管分布均匀、制备成本低的碳纳米管场发射显示器的制备方法。
本发明的碳纳米管场发射显示器的制备方法包括以下步骤:提供一基底,在基底上沉积与显示器的显示点阵相对应的阴极电极;形成催化剂层,即催化剂粉末自组装于阴极电极上;生成碳纳米管,即在催化剂层的辅助作用下,在阴极电极上生长碳纳米管;形成绝缘层,即在基底上形成一绝缘层,该绝缘层上具有与阴极电极相对应的微孔;形成栅极电极,即在绝缘层表面沉积栅极电极;以及封装显示器,即提供一荧光屏,将荧光屏与基底封接,形成碳纳米管场发射显示器。
与现有技术相比较,本发明碳纳米管场发射显示器的制备方法,利用自组装方式,在静电力或者磁力的驱动下,将催化剂粉末均匀且具选择性地接合到阴极电极上,形成催化剂层,进而可均匀且选择性地生长碳纳米管,制备出亮度分布均匀的碳纳米管场发射显示器。
附图说明
图1为本发明一较佳实施方式中制备碳纳米管场发射显示器的流程图。
图2为本发明的一较佳实施方式中沉积有阴极电极的基底示意图。
图3为图2中基底形成催化剂层的示意图。
图4为图2中基底自组装形成催化剂层后的示意图。
图5A为图4中基底形成绝缘层后的示意图。
图5B为图4中基底生成碳纳米管后的示意图。
图6为图5A中基底生成碳纳米管后的示意图。
图7为图6中绝缘层上形成栅极电极后的示意图。
图8为本发明一实施例中碳纳米管场发射显示器荧光屏封接后示意图。
具体实施方式
图1为本发明碳纳米管场发射显示器的制备流程图。其包括以下步骤:
提供一基底11,在基底11上沉积与显示器的显示点阵相对应的阴极电极12;
形成催化剂层14,即催化剂粉末13自组装于阴极电极上12;
生成碳纳米管15,即在催化剂层14的辅助作用下,在阴极电极12上生长碳纳米管15;
形成绝缘层31,即在基底11上形成一绝缘层31,该绝缘层31上具有与阴极电极12相对应的微孔32;
形成栅极电极41,即在绝缘层31表面沉积栅极电极41;以及
封装显示器,即提供一荧光屏62,将荧光屏62与基底11封接,形成碳纳米管场发射显示器。
下面结合具体图示具体描述该碳纳米管场发射显示器的制备过程。
请参阅图2,首先提供一基底11,该基底11材料可选用玻璃、陶瓷、氧化硅或氧化铝等绝缘材料,要求基底11表面平整度小于1微米,而且基底11能耐受碳纳米管15生长温度,一般为大于700℃。根据显示器显示点阵的尺寸要求,通过电镀、磁控溅射等方法沉积若干阴极电极12。将阴极电极12的上表面极化,使之带有正电荷。
如图3、4所示,通过液浸方式将催化剂粉末13自组装于阴极电极12上。首先,制备催化剂粉末13,并将催化剂粉末13极化,使之带有负电荷,再掺入到液体16中。催化剂粉末13可为铁(Fe)、钴(Co)、镍(Ni)或其合金之一。再将基底11浸入到含有已被极化的催化剂粉末13的液体16中。液体16为水或者微酸液体。由于阴极电极12与催化剂粉末13分别带有正负电荷,根据热力学能量趋向最小化原理,在静电力的驱动下,催化剂粉末13自组装于阴极电极12的上表面,即催化剂粉末13会自动地结合在基底11的阴极电极12的上表面。在自组装过程中,在阴极电极12的局部能量低点处可能造成催化剂粉末13排列不均匀或者重叠,故对基底11施加扰动,例如施加超声波,以去除结合不完全或者结合错误的催化剂粉末13,从而催化剂粉末13均匀且有选择性地分布在阴极电极12上,形成催化剂层14,其厚度为几纳米到几十纳米不等。
除上述方式,还可通过喷雾方式将催化剂粉末13自组装于阴极电极12上。首先,制备催化剂粉末13,并将催化剂粉末13极化,使之带有负电荷,再掺入到液体16中。然后,汽化含有催化剂粉末13的液体16,形成载流气体。最后,将载流气体喷洒于基底11上,使催化剂粉末13自组装于基底11的阴极电极12的上表面,形成催化剂层14。
本发明不限定于催化剂粉末13带有负电荷,阴极电极12带有正电荷,只要催化剂粉末13及阴极电极12分别带有不同的磁性或者电性,都可以实现催化剂粉末13自组装于阴极电极12上,形成催化剂层14。
如图5A所示,在基底11上形成一绝缘层31,该绝缘层31使得阴极电极12与栅极电极41之间绝缘。该绝缘层31上具有与阴极电极12相对应的微孔32,该微孔32提供碳纳米管15的生长空间。绝缘层31的制备可采用镀膜、印刷或者直接采用现成的薄板。绝缘层31的厚度由阴极电极12与栅极电极41之间的绝缘强度决定,其材料应当能够耐受碳纳米管15的生长温度,优选高温玻璃、涂敷绝缘材料的金属、硅、氧化硅及陶瓷等。
如图6所示,通过化学气相沉积法直接在催化剂层14上生长碳纳米管15,即把基底11放入生长碳纳米管15用的生长炉中,通入惰性保护气体,同时加热至预定温度后通入碳源气如乙炔气体,在催化剂层14的作用下生长碳纳米管15。
进一步而言,如图5B所示,在形成催化剂层14之后,首先生成碳纳米管15,然后形成绝缘层31,该绝缘层31上具有与阴极电极12相对应的微孔32,该微孔32用于容纳碳纳米管15。
如图7所示,在绝缘层31表面沉积栅极电极41,沉积方式可采用电子束蒸发、热蒸发或溅射法。
如图8所示,通过封装板61将荧光屏62与基底11封接,装配成碳纳米管场发射显示器。荧光屏62包括一玻璃基板621、一阳极透明导电层622及荧光层623。当在阳极透明导电层622与阴极电极12上施加电压后,碳纳米管15发射出电子,栅极电极41则控制电子的密度。当电子达到荧光层623后,发出荧光,并经由阳极透明导电层622及玻璃基板621,产生图像。
Claims (7)
1.一种碳纳米管场发射显示器的制备方法,其包括以下步骤:
提供一基底,在基底上沉积与显示器的显示点阵相对应的阴极电极;
形成催化剂层,即催化剂粉末自组装于阴极电极上;
生成碳纳米管,即在催化剂层的辅助作用下,在阴极电极上生长碳纳米管;
形成绝缘层,即在基底上形成一绝缘层,该绝缘层上具有与阴极电极相对应的微孔;
形成栅极电极,即在绝缘层表面沉积栅极电极;以及
封装显示器,即提供一荧光屏,将荧光屏与基底封接,形成碳纳米管场发射显示器。
2.如权利要求1所述的碳纳米管场发射显示器的制备方法,其特征在于,形成催化剂层包括以下步骤:
制备被极化的催化剂粉末,并极化该阴极电极,使催化剂粉末及阴极电极分别具有相反的磁性或者电性;
将催化剂粉末及该基底掺入液体中,使催化剂粉末自组装到该阴极电极上,形成催化剂层。
3.如权利要求2所述的碳纳米管场发射显示器的制备方法,其特征在于,将该基底掺入到该液体的过程中,扰动该基底以去除结合不完全或者结合错误的催化剂粉末。
4.如权利要求1所述的碳纳米管场发射显示器的制备方法,其特征在于,形成催化剂层包括以下步骤:
制备被极化的催化剂粉末,并极化该阴极电极,使催化剂粉末及阴极电极分别具有相反的磁性或者电性;
将催化剂粉末掺入液体中;
汽化含有催化剂粉末的液体,形成载流气体;及
将载流气体喷洒于基底上,使催化剂粉末自组装于阴极电极上,形成催化剂层。
5.如权利要求1所述的碳纳米管场发射显示器的制备方法,其特征在于,该形成绝缘层的步骤在该生成碳纳米管的步骤之前进行。
6.如权利要求1所述的碳纳米管场发射显示器的制备方法,其特征在于,该形成绝缘层的步骤在该生成碳纳米管的步骤之后进行。
7.如权利要求1所述的碳纳米管场发射显示器的制备方法,其特征在于,沉积栅极电极的方法为电子束蒸发、热蒸发及溅射法中一种。
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| CNA2008100662961A CN101556887A (zh) | 2008-04-09 | 2008-04-09 | 碳纳米管场发射显示器的制备方法 |
| US12/275,208 US20100056009A1 (en) | 2008-04-09 | 2008-11-20 | Method for fabricating field emission display |
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| CN1287413C (zh) * | 2003-03-26 | 2006-11-29 | 清华大学 | 一种场发射显示器 |
| CN1310270C (zh) * | 2003-03-26 | 2007-04-11 | 清华大学 | 一种场发射显示器的制备方法 |
| KR101046977B1 (ko) * | 2004-11-15 | 2011-07-07 | 삼성에스디아이 주식회사 | 카본나노튜브, 이를 포함한 전자 방출원 및 이를 구비한전자 방출 소자 |
| US20060194058A1 (en) * | 2005-02-25 | 2006-08-31 | Amlani Islamshah S | Uniform single walled carbon nanotube network |
| WO2006112455A1 (ja) * | 2005-04-18 | 2006-10-26 | Asahi Glass Company, Limited | 電子エミッタ、フィールドエミッションディスプレイ装置、冷陰極蛍光管、平面型照明装置、および電子放出材料 |
| US8834912B2 (en) * | 2005-12-30 | 2014-09-16 | Boston Scientific Scimed, Inc. | Medical devices having multiple charged layers |
| TWI322792B (en) * | 2006-01-11 | 2010-04-01 | Ind Tech Res Inst | Methods for fabricating carbon nano-tubes and field emission displays |
-
2008
- 2008-04-09 CN CNA2008100662961A patent/CN101556887A/zh active Pending
- 2008-11-20 US US12/275,208 patent/US20100056009A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20100056009A1 (en) | 2010-03-04 |
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